DE60224104D1 - Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp - Google Patents

Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp

Info

Publication number
DE60224104D1
DE60224104D1 DE60224104T DE60224104T DE60224104D1 DE 60224104 D1 DE60224104 D1 DE 60224104D1 DE 60224104 T DE60224104 T DE 60224104T DE 60224104 T DE60224104 T DE 60224104T DE 60224104 D1 DE60224104 D1 DE 60224104D1
Authority
DE
Germany
Prior art keywords
tube
cooling
melt
drop
drop tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60224104T
Other languages
English (en)
Other versions
DE60224104T2 (de
Inventor
Josuke Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE60224104D1 publication Critical patent/DE60224104D1/de
Application granted granted Critical
Publication of DE60224104T2 publication Critical patent/DE60224104T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0004—Crystallisation cooling by heat exchange
    • B01D9/0013—Crystallisation cooling by heat exchange by indirect heat exchange
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0036—Crystallisation on to a bed of product crystals; Seeding
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glanulating (AREA)
  • Silicon Compounds (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
DE60224104T 2002-05-13 2002-05-13 Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp Expired - Fee Related DE60224104T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/004620 WO2003095719A1 (fr) 2002-05-13 2002-05-13 Dispositif de production de cristaux granulaires de type pour tube de descente

Publications (2)

Publication Number Publication Date
DE60224104D1 true DE60224104D1 (de) 2008-01-24
DE60224104T2 DE60224104T2 (de) 2008-12-04

Family

ID=29416524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60224104T Expired - Fee Related DE60224104T2 (de) 2002-05-13 2002-05-13 Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp

Country Status (12)

Country Link
US (1) US7198672B2 (de)
EP (1) EP1510602B1 (de)
JP (1) JPWO2003095719A1 (de)
KR (1) KR100717700B1 (de)
CN (1) CN1318663C (de)
AT (1) ATE380892T1 (de)
AU (1) AU2002255348B8 (de)
CA (1) CA2483108C (de)
DE (1) DE60224104T2 (de)
ES (1) ES2294131T3 (de)
TW (1) TW555902B (de)
WO (1) WO2003095719A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006123403A1 (ja) * 2005-05-17 2006-11-23 Kyosemi Corporation 粒状結晶体製造装置
JP4817307B2 (ja) * 2006-06-06 2011-11-16 独立行政法人産業技術総合研究所 粒状半導体の製造方法及び製造装置
CN107589145B (zh) * 2017-09-04 2020-08-25 西北工业大学 一种金属液滴的微重力凝固装置
CN107695359B (zh) * 2017-09-06 2020-03-31 西北工业大学 微重力与液淬集成的金属液滴凝固方法
CN108168994B (zh) * 2017-11-27 2020-03-20 西北工业大学 一种在自由下落条件下金属液滴凝固的装置
CN111230130B (zh) * 2020-03-02 2021-09-07 西北工业大学 微重力条件下悬浮大尺寸金属液滴的快速凝固系统与方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
US4322379A (en) 1977-02-07 1982-03-30 Texas Instruments Incorporated Fabrication process for semiconductor bodies
US4829019A (en) * 1987-05-12 1989-05-09 Texas Instruments Incorporated Method for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachment
JP3231244B2 (ja) 1996-07-22 2001-11-19 仗祐 中田 無機材料製の球状体の製造方法及びその製造装置
DE69637769D1 (de) * 1996-10-09 2009-01-15 Josuke Nakata Halbleitervorrichtung
EP0940860B1 (de) * 1997-08-27 2003-10-15 Josuke Nakata Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial
EP0947613B1 (de) * 1997-10-23 2003-07-30 Josuke Nakata Verfahren und vorrichtung zur herstellung von einkristallen
US6264742B1 (en) * 1998-07-10 2001-07-24 Ball Semiconductor Inc. Single crystal processing by in-situ seed injection
US6106614A (en) * 1998-10-15 2000-08-22 Starmet Corp Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
JP2000169279A (ja) * 1998-12-10 2000-06-20 Komatsu Electronic Metals Co Ltd 球状半導体結晶製造方法及び製造装置
US7001543B2 (en) * 2001-10-23 2006-02-21 Kyocera Corporation Apparatus and method for manufacturing semiconductor grains

Also Published As

Publication number Publication date
DE60224104T2 (de) 2008-12-04
AU2002255348A1 (en) 2003-11-11
CA2483108A1 (en) 2003-11-20
KR100717700B1 (ko) 2007-05-11
CN1318663C (zh) 2007-05-30
EP1510602B1 (de) 2007-12-12
US20060070652A1 (en) 2006-04-06
CN1625613A (zh) 2005-06-08
AU2002255348B8 (en) 2009-05-21
EP1510602A1 (de) 2005-03-02
AU2002255348B2 (en) 2006-08-24
TW555902B (en) 2003-10-01
WO2003095719A1 (fr) 2003-11-20
EP1510602A4 (de) 2006-10-11
KR20040108810A (ko) 2004-12-24
ATE380892T1 (de) 2007-12-15
ES2294131T3 (es) 2008-04-01
US7198672B2 (en) 2007-04-03
CA2483108C (en) 2008-09-16
JPWO2003095719A1 (ja) 2005-09-15

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee