ATE235093T1 - Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür - Google Patents

Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür

Info

Publication number
ATE235093T1
ATE235093T1 AT98963793T AT98963793T ATE235093T1 AT E235093 T1 ATE235093 T1 AT E235093T1 AT 98963793 T AT98963793 T AT 98963793T AT 98963793 T AT98963793 T AT 98963793T AT E235093 T1 ATE235093 T1 AT E235093T1
Authority
AT
Austria
Prior art keywords
dendrite
cathode
voltage
ion conductor
anode
Prior art date
Application number
AT98963793T
Other languages
English (en)
Inventor
Michael N Kozicki
William C West
Original Assignee
Axon Technologies Corp
Univ Arizona State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axon Technologies Corp, Univ Arizona State filed Critical Axon Technologies Corp
Application granted granted Critical
Publication of ATE235093T1 publication Critical patent/ATE235093T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
AT98963793T 1997-12-04 1998-12-04 Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür ATE235093T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6750997P 1997-12-04 1997-12-04
PCT/US1998/025830 WO1999028914A2 (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same

Publications (1)

Publication Number Publication Date
ATE235093T1 true ATE235093T1 (de) 2003-04-15

Family

ID=22076456

Family Applications (2)

Application Number Title Priority Date Filing Date
AT98963793T ATE235093T1 (de) 1997-12-04 1998-12-04 Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür
AT02006778T ATE274744T1 (de) 1997-12-04 1998-12-04 Programmierbare aggregierende unterflächenmetallisierungsstruktur

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT02006778T ATE274744T1 (de) 1997-12-04 1998-12-04 Programmierbare aggregierende unterflächenmetallisierungsstruktur

Country Status (11)

Country Link
US (3) US6418049B1 (de)
EP (2) EP1235227B1 (de)
JP (2) JP2001525606A (de)
KR (1) KR100371102B1 (de)
CN (1) CN1260734C (de)
AT (2) ATE235093T1 (de)
AU (1) AU751949C (de)
CA (1) CA2312841C (de)
DE (2) DE69812425T2 (de)
HK (1) HK1032139A1 (de)
WO (1) WO1999028914A2 (de)

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