WO2020189011A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2020189011A1
WO2020189011A1 PCT/JP2020/002566 JP2020002566W WO2020189011A1 WO 2020189011 A1 WO2020189011 A1 WO 2020189011A1 JP 2020002566 W JP2020002566 W JP 2020002566W WO 2020189011 A1 WO2020189011 A1 WO 2020189011A1
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WIPO (PCT)
Prior art keywords
temperature
unit
main body
substrate
processing
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PCT/JP2020/002566
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English (en)
Japanese (ja)
Inventor
金岡　雅
義和 大下
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020189011A1 publication Critical patent/WO2020189011A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a substrate processing apparatus that performs a predetermined treatment on a substrate.
  • FPD Fluorescence Panel Display
  • semiconductor substrates semiconductor substrates
  • optical disk substrates magnetic disk substrates
  • magneto-optical disk substrates magneto-optical disk substrates
  • photomask substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, etc.
  • a substrate processing apparatus is used to perform various processing on various substrates such as a ceramic substrate or a substrate for a solar cell.
  • the substrate processing apparatus includes, for example, a developing apparatus that develops a substrate.
  • a developing apparatus that develops a substrate.
  • a developer is supplied to the resist film after the exposure process on the substrate.
  • the line width of the resist film pattern formed on the substrate by the developing process changes depending on the temperature of the developing solution. Therefore, in order to prevent an increase in the variation in the line width of the pattern, a developing device that adjusts the temperature of the developing solution supplied to the substrate to a predetermined set temperature has been proposed.
  • the developing solution is supplied from the developing solution supply source to the developing solution buffer tank.
  • the developer stored in the developer buffer tank is supplied to the developer discharge nozzle through the developer pipe.
  • the temperature of the developer flowing through the developer pipe is adjusted by the constant temperature water flowing through the constant temperature water pipe provided so as to surround the developer pipe.
  • the temperature of the developer stored in the developer buffer tank depends on the temperature around the developer path from the developer source to the developer buffer tank. Therefore, if the temperature around the developer path deviates significantly from the set temperature due to seasonal changes or the like, it becomes difficult to adjust the temperature of the developer.
  • An object of the present invention is to provide a substrate processing apparatus capable of suppressing an increase in variation in substrate processing due to the temperature of a processing liquid while improving throughput.
  • the substrate processing apparatus is a processing unit that performs a predetermined treatment on a substrate using a processing liquid, a processing liquid supply system that supplies the processing liquid to the processing unit, and a processing liquid supply system.
  • the treatment liquid supply system includes a first storage portion for storing the treatment liquid, a first treatment liquid flow path from the first storage portion to the treatment portion, and a treatment liquid supply system including an adjusting unit for adjusting the temperature of the liquid.
  • a second treatment liquid flow path that supplies the treatment liquid supplied from the liquid supply source to the first storage part is included, and the adjustment part matches the set temperature set for performing a predetermined treatment, or At least one of the first temperature control device that adjusts the temperature of the treatment liquid stored in the first storage unit so as to approach the temperature, and the second treatment liquid flow path so as to match or approach the set temperature. It includes a second temperature adjusting device for adjusting the temperature of the processing liquid flowing through the unit.
  • the processing liquid supplied from the processing liquid supply source is stored in the first storage unit through the second processing liquid flow path.
  • the temperature of the processing liquid flowing inside the second processing liquid flow path is adjusted to match or approach the set temperature.
  • the treatment liquid stored in the first storage unit is supplied to the treatment unit through the first treatment liquid flow path.
  • the temperature of the treatment liquid stored in the storage unit is adjusted so as to match or approach the set temperature.
  • a predetermined treatment is performed on the substrate using the treatment liquid.
  • the temperature of the processing liquid is adjusted stepwise by the first and second temperature adjusting devices in the processing liquid supply path from the processing liquid supply source to the processing unit.
  • the temperature adjusting ability of the treatment liquid is improved as compared with the case where only one of the first and second temperature adjusting devices is used.
  • individually controlling the first and second temperature adjusting devices it is possible to more appropriately adjust the temperature of the processing liquid in stages. As a result, it is possible to prevent the temperature of the processing liquid from deviating from the set temperature due to the ambient temperature of the substrate processing apparatus or the like.
  • the first temperature adjusting device may further adjust the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path so as to match or approach the set temperature.
  • the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path matches or approaches the set temperature.
  • the increase in variation in substrate processing due to the temperature of the processing liquid deviating from the set temperature is further suppressed.
  • the substrate processing apparatus further includes a second storage unit for storing the processing liquid supplied from the processing liquid supply source, and the second processing liquid flow path is a second storage unit and a first storage unit.
  • the second temperature adjusting device may further adjust the temperature of the processing liquid stored in the second storage portion so as to match or approach the set temperature.
  • the temperature of the treatment liquid stored in the second storage unit matches or approaches the set temperature.
  • the increase in variation in substrate processing due to the temperature of the processing liquid deviating from the set temperature is further suppressed.
  • the substrate processing apparatus may include a main body portion including a processing unit and a first storage unit, and a sub-main body unit that is arranged as a separate body from the main body unit and includes a second storage unit. ..
  • the temperature of the treatment liquid can be adjusted independently in the first and second storage units. Therefore, the temperature of the processing liquid supplied to the processing unit can be appropriately adjusted.
  • the main body portion and the sub-main body portion are provided so as to be separated from each other, and at least a part of the second processing liquid flow path may include a portion between the main body portion and the sub-main body portion.
  • the temperature of the processing liquid flowing in the portion of the second processing liquid flow path located between the main body portion and the sub main body portion is adjusted.
  • the treatment liquid flowing through the second treatment liquid flow path is suppressed from being affected by the temperature outside the main body portion and the sub main body portion.
  • the main body portion may be provided in the space where the downdraft is formed, and the first storage portion may be provided above the processing portion.
  • the heat generated in the processing unit flows downward due to the downdraft.
  • the treatment liquid stored in the first storage unit is suppressed from being affected by the heat generated in the treatment unit.
  • the substrate processing apparatus may further include a first accommodating chamber for accommodating the main main body portion and a second accommodating chamber for accommodating the sub-main body portion.
  • the predetermined process includes a developing process
  • the processing unit may include a developing device that supplies a developing solution as a processing solution to the substrate.
  • the substrate is developed with higher accuracy.
  • the present invention it is possible to suppress an increase in variation in substrate processing due to the temperature of the processing liquid while improving throughput.
  • FIG. 1 is a schematic block diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing an example of the configuration of the first and second temperature adjusting units of FIG.
  • FIG. 3 is a schematic plan view showing an example of the layout of each component shown in the substrate processing apparatus of FIG.
  • FIG. 4 is a schematic side view of the substrate processing apparatus of FIG.
  • FIG. 5 is a schematic block diagram showing a configuration of a substrate processing apparatus according to another embodiment.
  • the substrate is an FPD (Flat Panel Display) substrate, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk, which is used for a liquid crystal display device, an organic EL (Electro Luminescence) display device, or the like.
  • FPD Fluorescence Panel Display
  • a substrate for a photomask a substrate for a photomask
  • a ceramic substrate a substrate for a solar cell, or the like.
  • FIG. 1 is a schematic block diagram showing a configuration of a substrate processing device according to an embodiment of the present invention.
  • the substrate processing apparatus 100 is provided adjacent to the exposure apparatus 500 in the clean room CL, and includes an apparatus main body 200 and a chemical solution cabinet 300.
  • the device main body 200 and the chemical solution cabinet 300 are provided as separate bodies from each other.
  • the device main body 200 includes a control device 210, a coating processing unit 220, a developing processing unit 230, a plurality of heat treatment units 240, a plurality of transport units 250, a first temperature adjusting unit 260, and a plurality of buffer tanks BT1. Further, the chemical liquid cabinet 300 includes a second temperature adjusting unit 310 and a buffer tank BT2.
  • the control device 210 includes, for example, a CPU and a memory, or a microcomputer, and includes a coating processing unit 220, a developing processing unit 230, a heat treatment unit 240, a transport unit 250, a first temperature adjusting unit 260, and a second temperature adjusting unit 310. Control the operation.
  • the device main body 200 includes a plurality of transport units 250, and each transport unit 250 has a transport robot that transports the substrate W.
  • the plurality of transport units 250 transport the substrate W between another transport robot provided outside the apparatus main body 200, a coating processing unit 220, a developing processing unit 230, a heat treatment unit 240, and an exposure device 500.
  • the coating processing unit 220 includes a plurality of coating units. Each coating unit forms a resist film on one surface of the untreated substrate W (coating treatment). The coating process W on which the resist film is formed is exposed by the exposure apparatus 500.
  • the development processing unit 230 includes a plurality of development units SD.
  • Each developing unit SD includes a spin chuck 91 and a developing nozzle 92.
  • the spin chuck 91 rotatably holds the substrate W after the exposure process by the exposure apparatus 500 in a horizontal posture.
  • the developer is supplied to the developing nozzle 92 from a developer supply source 1 provided outside the substrate processing apparatus 100 through a plurality of pipes p1, p2, p3 and a plurality of buffer tanks BT1 and BT2.
  • the developing nozzle 92 discharges the supplied developer onto the upper surface of the substrate W held by the spin chuck 91 (development processing).
  • the temperature of the developer to be supplied to the substrate W is preset in the substrate processing apparatus 100. This setting is performed, for example, by the user operating an operation unit (not shown). The setting contents are stored in the control device 210.
  • the temperature of the preset developer to be supplied to the substrate W is referred to as a set temperature. In the present embodiment, it is assumed that a common temperature is set for a plurality of substrates W processed by the substrate processing apparatus 100.
  • the device main body 200 includes a plurality of heat treatment units 240.
  • the plurality of heat treatment units 240 heat-treat the substrate W before and after the coating treatment by the coating treatment unit 220, the development treatment by the development processing unit 230, and the exposure treatment by the exposure apparatus 500.
  • the coating processing unit 220 may form an antireflection film on the substrate W.
  • the heat treatment unit 240 may be provided with a processing unit for performing an adhesion strengthening treatment for improving the adhesion between the substrate W and the antireflection film.
  • the coating processing unit 220 may form a resist cover film on the substrate W to protect the resist film formed on the substrate W.
  • a pipe p3 is provided between the developer supply source 1 and the buffer tank BT2 of the chemical solution cabinet 300.
  • the pipe p3 circulates the developer from the developer supply source 1 to the buffer tank BT2.
  • the developer flowing into the developer cabinet 300 from the developer supply source 1 is temporarily stored in the buffer tank BT2.
  • a plurality of pipes p2 are provided between the buffer tank BT2 of the chemical solution cabinet 300 and the plurality of buffer tanks BT1 of the apparatus main body 200.
  • the plurality of pipes p2 circulate the developing solution from the buffer tank BT2 to the plurality of buffer tanks BT1.
  • the developing solution flowing from the chemical solution cabinet 300 into the apparatus main body 200 is temporarily stored in the plurality of buffer tanks BT1.
  • the plurality of buffer tanks BT1 correspond to a plurality of development units SD provided in the development processing unit 230, respectively.
  • a pipe p1 is provided between each buffer tank BT1 and the developing unit SD corresponding to the buffer tank BT1.
  • Each pipe p1 circulates the developer from the buffer tank BT1 to the developing nozzle 92.
  • At least a part of the plurality of buffer tanks BT1 and BT2 and the plurality of pipes p1 to p3 are provided with fluid-related equipment (not shown) for controlling the supply state of the developer in the plurality of developing nozzles 92. Be done.
  • the first temperature adjusting unit 260 adjusts the temperature of the developing solution stored in each of the plurality of buffer tanks BT1 so as to match or approach the set temperature, as shown by the dotted arrow in FIG. Further, the first temperature adjusting unit 260 adjusts the temperature of the developing solution flowing through the plurality of pipes p1 so as to match or approach the set temperature, as shown by the dotted arrows and hatching in FIG.
  • the first temperature adjusting unit 260 may adjust the temperature of the developing solution flowing through a part of each pipe p1. Alternatively, the first temperature adjusting unit 260 does not have to adjust the temperature of the developing solution in the plurality of buffer tanks BT1 and adjust the temperature of the developing solution flowing through the plurality of pipes p1.
  • the second temperature adjusting unit 310 adjusts the temperature of the developing solution flowing through the plurality of pipes p2 so as to match or approach the set temperature, as shown by the dotted arrow and the dot pattern in FIG.
  • the second temperature adjusting unit 310 may adjust the temperature of the developing solution flowing through a part of each pipe p2. Further, the second temperature adjusting unit 310 adjusts the temperature of the developing solution stored in the buffer tank BT2 so as to match or approach the set temperature, as shown by the dotted arrow in FIG.
  • the second temperature adjusting unit 310 does not have to adjust the temperature of at least a part of the developing solution flowing through the plurality of pipes p2 and the temperature of the developing solution stored in the buffer tank BT2.
  • FIG. 2 is a diagram showing an example of the configuration of the first and second temperature adjusting units 260 and 310 of FIG.
  • the pipes p1, p2, and p3 of FIG. 1 are shown by thick solid lines.
  • the boundary portion between the apparatus main body portion 200 and the chemical solution cabinet 300 of FIG. 1 is shown by a dashed line.
  • the first temperature adjusting unit 260 includes a constant temperature water circulation system including a constant temperature bath c1, a circulation device c2, and a circulation pipe L1.
  • a constant temperature bath c1 for example, constant temperature water maintained at the above-mentioned set temperature is stored.
  • the constant temperature bath c1 is provided with a temperature adjusting device (not shown) for adjusting the temperature of the constant temperature water.
  • One end and the other end of the circulation pipe L1 are connected to the constant temperature bath c1.
  • the circulation pipe L1 is provided with a circulation device c2 such as a pump.
  • a part lp1 of the circulation pipe L1 is provided so as to come into contact with a wide range of the outer surface of the buffer tank BT1.
  • the part lp1 of the circulation pipe L1 may be provided so as to pass through the inside of the buffer tank BT1 instead of the outer peripheral surface of the buffer tank BT1.
  • the other portion lp2 of the circulation pipe L1 is provided so as to cover a part of the pipe p1.
  • a double pipe is formed in which the pipe p1 is an inner pipe and the other portion lp2 of the circulation pipe L1 is an outer pipe.
  • a space through which constant temperature water can flow is formed between the outer peripheral surface of the pipe p1 and the inner peripheral surface of the circulation pipe L1.
  • the circulation device c2 when the circulation device c2 operates, the constant temperature water circulates in the constant temperature tank c1 and the circulation pipe L1 as shown by the dotted arrow in FIG.
  • the temperature of the developing solution stored in the buffer tank BT1 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer surface of the buffer tank BT1.
  • the temperature of the developing solution existing in the pipe p1 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer peripheral surface of the pipe p1.
  • the second temperature adjusting unit 310 has the same configuration as the first temperature adjusting unit 260.
  • the second temperature adjusting unit 310 includes a constant temperature water circulation system including a constant temperature bath c11, a circulation device c12, and a circulation pipe L11.
  • the constant temperature bath c11 for example, constant temperature water maintained at the above-mentioned set temperature is stored.
  • the constant temperature bath c11 is provided with a temperature adjusting device (not shown) for adjusting the temperature of the constant temperature water.
  • One end and the other end of the circulation pipe L11 are connected to the constant temperature bath c11.
  • the circulation pipe L11 is provided with a circulation device c12.
  • a part lp11 of the circulation pipe L11 is provided so as to come into contact with a wide range of the outer surface of the buffer tank BT2. Further, the other portion lp12 of the circulation pipe L11 is provided so as to cover a part of the pipe p2.
  • a double pipe is formed in which the pipe p2 is an inner pipe and the other portion lp12 of the circulation pipe L11 is an outer pipe.
  • the circulation device c12 operates, the constant temperature water circulates in the constant temperature tank c11 and the circulation pipe L11.
  • the temperature of the developing solution stored in the buffer tank BT2 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer surface of the buffer tank BT2.
  • the temperature of the developing solution existing in the pipe p2 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer peripheral surface of the pipe p2.
  • the temperature of the constant temperature water used in the first temperature adjusting unit 260 and the temperature of the constant temperature water used in the second temperature adjusting unit 310 may be the same as or different from each other. Good.
  • the temperature of the developer in the developer supply source 1 (hereinafter referred to as the developer initial temperature) is higher than the set temperature.
  • the temperature of the constant temperature water used in the first temperature adjusting unit 260 is set as the set temperature
  • the temperature of the constant temperature water used in the second temperature adjusting unit 310 is set between the initial temperature of the developing solution and the set temperature. Intermediate temperature may be used. In this case, the temperature of the developer can be adjusted stepwise more appropriately.
  • each temperature adjusting unit is appropriately determined according to, for example, the capacity of the buffer tanks BT1 and BT2 and the lengths of the plurality of pipes p1 and p2.
  • a temperature sensor for detecting the temperature of the developing solution may be provided in a part of the buffer tank BT1 and the pipe p1.
  • the first temperature adjusting unit 260 may change the temperature of the constant temperature water so that the temperature of the developing solution flowing through the pipe p1 approaches the set temperature based on the temperature detected by the temperature sensor.
  • a temperature sensor for detecting the temperature of the developing solution may be provided in a part of the buffer tank BT2 and the pipe p2.
  • the second temperature adjusting unit 310 may change the temperature of the constant temperature water so that the temperature of the developer flowing through the pipe p2 approaches the set temperature based on the temperature detected by the temperature sensor.
  • FIG. 3 is a schematic plan view showing an example of the layout of each component shown in the substrate processing apparatus 100 of FIG. 1, and FIG. 4 is a schematic plan view of FIG. It is a schematic side view of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 is provided in the clean room CL together with the exposure apparatus 500.
  • the developer supply source 1 is arranged outside the clean room CL.
  • the device main body 200 of this example includes four blocks B1, B2, B3, and B4.
  • the blocks B1, B2, B3, and B4 are provided so as to be arranged in one direction in this order.
  • the exposure apparatus 500 is provided adjacent to the block B4.
  • Block B1 includes a transport unit 250.
  • the transport unit 250 functions as a carry-in / carry-out unit for the substrate W.
  • Block B2 includes a coating processing unit 220, a heat treatment unit 240, and a transport unit 250.
  • the coating processing unit 220 and the heat treatment unit 240 are provided so as to face each other with the transport unit 250 interposed therebetween.
  • Block B3 includes a developing unit 230, a heat treatment unit 240, a transport unit 250, and a first temperature adjusting unit 260 (FIG. 4).
  • the developing unit 230, the first temperature adjusting unit 260, and the heat treatment unit 240 are provided so as to face each other with the conveying unit 250 interposed therebetween.
  • Block B4 includes a transport unit 250.
  • the transport unit 250 functions as a transfer unit that transfers the substrate between the blocks B2 and B3 and the exposure apparatus 500.
  • the clean room CL is provided with a floor FL composed of grating.
  • an upper chamber and a lower chamber are formed in the clean room CL.
  • the apparatus main body 200 of the substrate processing apparatus 100 includes the first temperature adjusting unit 260 and is provided on the floor FL in the clean room CL. That is, the device main body 200 is housed in the upper chamber.
  • the chemical liquid cabinet 300 includes the second temperature adjusting unit 310, and is provided below the floor portion FL in the clean room CL. That is, the chemical solution cabinet 300 is housed in the lower chamber.
  • the plurality of buffer tanks BT1 provided in the apparatus main body 200 are provided at the upper end of the block B3.
  • a downdraft is formed inside the clean room CL by an airflow generator (not shown). Therefore, as described above, when the plurality of buffer tanks BT1 are provided above the plurality of developing units SD, the temperature around the plurality of buffer tanks BT1 is the heat generated from the plurality of developing units SD. Less susceptible. As a result, the developer stored in the plurality of buffer tanks BT1 is suppressed from being affected by the heat generated from the plurality of developing units SD.
  • the apparatus main body 200 and the chemical solution cabinet 300 are provided so as to be separated from each other.
  • the plurality of pipes p2 for supplying the developer from the chemical solution cabinet 300 to the device main body 200 are located between the device main body 200 and the chemical solution cabinet 300.
  • the second temperature adjusting unit 310 adjusts the temperature of the developing solution existing inside at least the portion of each pipe p2 located between the apparatus main body 200 and the chemical solution cabinet 300. As a result, it is possible to prevent the developer existing in each pipe p2 from being affected by the temperature outside the apparatus main body 200 and the chemical solution cabinet 300, that is, in the clean room CL.
  • the developer supplied from the developer supply source 1 is stored in the plurality of buffer tanks BT1 through the pipe p3, the buffer tank BT2, and the plurality of pipes p2. Further, the developing solution stored in each buffer tank BT1 is supplied to the developing unit SD through the pipe p1, and the substrate W is subjected to the developing process.
  • the temperatures of the developer stored in the buffer tank BT1 and the developer existing in the pipe p1 are adjusted by the first temperature adjusting unit 260 so as to approach the set temperature. Further, the temperatures of the developer stored in the buffer tank BT2 and the developer existing in the pipe p2 are adjusted by the second temperature adjusting unit 310 so as to approach the set temperature.
  • the temperature of the developer is adjusted stepwise in the developer supply system from the developer supply source 1 to the developer unit SD.
  • the temperature adjusting ability of the developing solution is improved as compared with the case where only one of the first and second temperature adjusting units 260 and 310 is used.
  • by individually controlling the first and second temperature adjusting units 260 and 310 it is possible to more appropriately adjust the temperature of the developing solution in stages. As a result, it is possible to prevent the temperature of the developing solution supplied to the substrate W from deviating from the set temperature due to the ambient temperature of the substrate processing apparatus 100 or the like.
  • the present inventor adjusts the temperature of the developing solution by the first and second temperature adjusting units 260 and 310 using the substrate processing apparatus 100 of FIGS. 3 and 4 as an example. While doing so, the development process was continuously performed on the 25 substrates W. Then, the line width of the pattern obtained by the development treatment was measured for all 25 substrates W. As a result, it was not confirmed that the line width of the pattern changed (the line width became larger) as the number of processed sheets increased. This means that the increase in variation in substrate processing was suppressed.
  • the present inventor continuously adjusts the temperature of the developing solution only by the first temperature adjusting unit 260 using the substrate processing apparatus 100 of FIGS. 3 and 4 for 25 substrates W. Development processing was performed. Then, the line width of the pattern obtained by the development treatment was measured for all 25 substrates W. As a result, it was confirmed that the line width of the pattern changes (the line width increases) as the number of processed sheets increases. This means that the variation in the substrate processing gradually increases as the substrate W is continuously processed. The tendency of the line width of the pattern to change (the line width becomes large) is considered to be due to the fact that the developer whose temperature has not been sufficiently adjusted is supplied to the substrate W.
  • the temperature of the developer supplied to the developing unit SD is adjusted by the first and second temperature adjusting units 260 and 310, but the present invention Is not limited to this.
  • the first and second temperature adjusting units 260 and 310 may adjust the temperature of the processing liquid other than the developing solution.
  • FIG. 5 is a schematic block diagram showing the configuration of the substrate processing apparatus 100 according to another embodiment. The difference between the substrate processing apparatus 100 of FIG. 5 and the substrate processing apparatus 100 of FIG. 1 according to the above embodiment will be described.
  • each developing unit SD includes a rinse nozzle 99 in addition to the spin chuck 91 and the developing nozzle 92.
  • the rinse nozzle 99 is supplied with the rinse liquid from the rinse liquid supply source 12 provided outside the substrate processing device 100 through the plurality of pipes p31, p32, p33 and the plurality of buffer tanks BT11 and BT12.
  • the rinse solution is, for example, pure water or a surfactant.
  • the rinse nozzle 99 discharges the supplied rinse liquid onto the upper surface of the substrate W held by the spin chuck 91.
  • the developer tends to diffuse on the upper surface of the substrate W during the developing process.
  • the rinse nozzle 99 discharges the supplied rinse liquid onto the upper surface of the substrate W held by the spin chuck 91 when the development process is stopped. As a result, the developing process is stopped.
  • a pipe p33 is provided between the rinse liquid supply source 12 and the buffer tank BT12 of the chemical liquid cabinet 300.
  • the pipe p33 circulates the rinse liquid from the rinse liquid supply source 12 to the buffer tank BT12.
  • the rinse liquid flowing into the chemical liquid cabinet 300 from the rinse liquid supply source 12 is temporarily stored in the buffer tank BT12.
  • a plurality of pipes p32 are provided between the buffer tank BT12 of the chemical solution cabinet 300 and the plurality of buffer tanks BT11 of the apparatus main body 200.
  • the plurality of pipes p32 circulate the rinse liquid from the buffer tank BT12 to the plurality of buffer tanks BT11.
  • the rinse liquid flowing from the chemical liquid cabinet 300 into the apparatus main body 200 is temporarily stored in the plurality of buffer tanks BT11.
  • the plurality of buffer tanks BT11 correspond to a plurality of development units SD provided in the development processing unit 230, respectively.
  • a pipe p31 is provided between each buffer tank BT11 and the developing unit SD corresponding to the buffer tank BT11.
  • Each pipe p31 circulates the developer from the buffer tank BT11 to the rinse nozzle 99.
  • At least a part of the plurality of buffer tanks BT11 and BT12 and the plurality of pipes p31 to p33 are provided with fluid-related equipment (not shown) for controlling the supply state of the rinse liquid in the plurality of rinse nozzles 99. Be done.
  • the first temperature adjusting unit 260 of this example sets the temperature of the rinsing solution stored in each of the plurality of buffer tanks BT11 in addition to the temperature of the developing solution. Adjust to match or approach the set temperature. Further, the first temperature adjusting unit 260 adjusts the temperature of the rinse liquid flowing through the plurality of pipes p31 so as to match or approach the set temperature of the developing liquid, as shown by the dotted arrows and hatching in FIG. To do.
  • the second temperature adjusting unit 310 sets the temperature of the rinsing solution flowing through the plurality of pipes p32 as the set temperature of the developing solution in addition to the temperature of the developing solution. Adjust to match or approach. Further, the second temperature adjusting unit 310 adjusts the temperature of the rinsing solution stored in the buffer tank BT12 so as to match or approach the set temperature of the developing solution, as shown by the dotted arrow in FIG. ...
  • the temperature of the rinsing solution supplied to the substrate W immediately before the developing process and at the end of the developing process matches or becomes almost equal to the set temperature of the developing solution.
  • the temperature of the substrate W at the start and end of the developing process is suppressed from changing depending on the temperature of the rinsing liquid.
  • the processing state of the substrate W at the start and end of the development process is stabilized.
  • the temperature of the coating liquid for forming a resist film, an antireflection film, a resist cover film, or the like on the substrate W may be adjusted.
  • a plurality of buffer tanks BT1 are provided so as to correspond to the plurality of development units SD, but the present invention is not limited thereto.
  • one buffer tank BT1 common to a plurality of developing units SD may be provided.
  • a plurality of pipes p1 are provided so as to extend from one buffer tank BT1 to the plurality of developing units SD.
  • the first temperature adjusting unit 260 adjusts the temperature of the cleaning liquid existing in the buffer tank BT1 and the plurality of pipes p1.
  • one buffer tank BT2 commonly used for a plurality of developing units SD is provided, but the present invention is not limited to this.
  • a plurality of buffer tanks BT2 may be provided so as to correspond to the plurality of developing units SD.
  • a plurality of pipes p2 are provided so as to extend from the plurality of buffer tanks BT2 to the plurality of buffer tanks BT1.
  • the second temperature adjusting unit 310 adjusts the temperature of the cleaning liquid existing in the plurality of buffer tanks BT2 and the plurality of pipes p2.
  • the apparatus main body 200 and the chemical solution cabinet 300 are arranged as separate bodies, but the present invention is not limited thereto.
  • the chemical solution cabinet 300 or its internal configuration may be provided in the apparatus main body 200.
  • the chemical solution cabinet 300 is provided below the device main body 200, but the present invention is not limited thereto.
  • the chemical solution cabinet 300 may be provided on the same floor FL as the device main body 200.
  • the developing unit SD is an example of the processing unit
  • the developing solution supply source 1, the rinsing solution supply source 12, the pipes p1 to p3, p31 to p33, and the buffer tanks BT1, BT2, BT11, and BT12 are the processing liquids.
  • It is an example of a supply system
  • the first temperature adjusting unit 260 and the second temperature adjusting unit 310 are examples of the adjusting unit.
  • the plurality of buffer tanks BT1 and BT11 are examples of the first storage portion
  • the plurality of pipes p1 and p31 are examples of the first treatment liquid flow path
  • the pipes p2 and p32 are examples of the second treatment liquid flow.
  • An example of a road a first temperature adjusting unit 260 is an example of a first temperature adjusting device
  • a second temperature adjusting unit 310 is an example of a second temperature adjusting device
  • a substrate processing device 100 is a substrate. This is an example of a processing device.
  • the buffer tanks BT2 and BT12 are examples of the second storage unit
  • the apparatus main body 200 is an example of the main body
  • the chemical cabinet 300 is an example of the sub-main body
  • the upper chamber of the clean room CL is the second.
  • No. 1 is an example of the accommodation chamber
  • the lower chamber of the clean room CL is an example of the second accommodation chamber
  • the developing unit SD is an example of the developing apparatus.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Polarising Elements (AREA)

Abstract

Selon la présente invention, un fluide de développement qui est apporté à partir d'une source d'alimentation en fluide de développement est collecté dans un réservoir tampon par l'intermédiaire d'une tuyauterie. Dans au moins une partie de la tuyauterie, la température du fluide de développement qui s'écoule dans celle-ci est réglée pour être à ou proche d'une température de consigne prédéfinie pour un traitement de développement. Le fluide de développement collecté dans le réservoir tampon est apporté à une unité de développement par l'intermédiaire de la tuyauterie. Dans le réservoir tampon, la température du fluide de développement collecté dans celui-ci est réglée pour être à ou proche de la température prédéfinie. Dans l'unité de développement, un substrat est soumis au traitement de développement à l'aide du fluide de développement apporté.
PCT/JP2020/002566 2019-03-20 2020-01-24 Appareil de traitement de substrat WO2020189011A1 (fr)

Applications Claiming Priority (2)

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JP2019053366A JP7198698B2 (ja) 2019-03-20 2019-03-20 基板処理装置
JP2019-053366 2019-03-20

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WO2020189011A1 true WO2020189011A1 (fr) 2020-09-24

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JP (1) JP7198698B2 (fr)
TW (1) TWI770462B (fr)
WO (1) WO2020189011A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574698A (ja) * 1991-09-18 1993-03-26 Hitachi Ltd レジスト塗布装置
JP2000182926A (ja) * 1998-12-14 2000-06-30 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002159905A (ja) * 2000-11-27 2002-06-04 Mitsumi Electric Co Ltd 塗布装置及び塗布方法
JP2017028299A (ja) * 2013-09-27 2017-02-02 東京エレクトロン株式会社 処理液供給路の前処理方法及び処理液供給装置
JP2018182271A (ja) * 2017-04-21 2018-11-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2019061988A (ja) * 2017-09-22 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス 薬液生成方法、薬液生成装置および基板処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335231A (ja) * 1997-06-05 1998-12-18 Sony Corp 液処理装置
JP6666164B2 (ja) * 2016-02-17 2020-03-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6685791B2 (ja) * 2016-03-25 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574698A (ja) * 1991-09-18 1993-03-26 Hitachi Ltd レジスト塗布装置
JP2000182926A (ja) * 1998-12-14 2000-06-30 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002159905A (ja) * 2000-11-27 2002-06-04 Mitsumi Electric Co Ltd 塗布装置及び塗布方法
JP2017028299A (ja) * 2013-09-27 2017-02-02 東京エレクトロン株式会社 処理液供給路の前処理方法及び処理液供給装置
JP2018182271A (ja) * 2017-04-21 2018-11-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2019061988A (ja) * 2017-09-22 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス 薬液生成方法、薬液生成装置および基板処理装置

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JP7198698B2 (ja) 2023-01-04
TWI770462B (zh) 2022-07-11
JP2020155618A (ja) 2020-09-24
TW202040638A (zh) 2020-11-01

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