WO2020189011A1 - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

Info

Publication number
WO2020189011A1
WO2020189011A1 PCT/JP2020/002566 JP2020002566W WO2020189011A1 WO 2020189011 A1 WO2020189011 A1 WO 2020189011A1 JP 2020002566 W JP2020002566 W JP 2020002566W WO 2020189011 A1 WO2020189011 A1 WO 2020189011A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
unit
main body
substrate
processing
Prior art date
Application number
PCT/JP2020/002566
Other languages
French (fr)
Japanese (ja)
Inventor
金岡　雅
義和 大下
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Publication of WO2020189011A1 publication Critical patent/WO2020189011A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a substrate processing apparatus that performs a predetermined treatment on a substrate.
  • FPD Fluorescence Panel Display
  • semiconductor substrates semiconductor substrates
  • optical disk substrates magnetic disk substrates
  • magneto-optical disk substrates magneto-optical disk substrates
  • photomask substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, etc.
  • a substrate processing apparatus is used to perform various processing on various substrates such as a ceramic substrate or a substrate for a solar cell.
  • the substrate processing apparatus includes, for example, a developing apparatus that develops a substrate.
  • a developing apparatus that develops a substrate.
  • a developer is supplied to the resist film after the exposure process on the substrate.
  • the line width of the resist film pattern formed on the substrate by the developing process changes depending on the temperature of the developing solution. Therefore, in order to prevent an increase in the variation in the line width of the pattern, a developing device that adjusts the temperature of the developing solution supplied to the substrate to a predetermined set temperature has been proposed.
  • the developing solution is supplied from the developing solution supply source to the developing solution buffer tank.
  • the developer stored in the developer buffer tank is supplied to the developer discharge nozzle through the developer pipe.
  • the temperature of the developer flowing through the developer pipe is adjusted by the constant temperature water flowing through the constant temperature water pipe provided so as to surround the developer pipe.
  • the temperature of the developer stored in the developer buffer tank depends on the temperature around the developer path from the developer source to the developer buffer tank. Therefore, if the temperature around the developer path deviates significantly from the set temperature due to seasonal changes or the like, it becomes difficult to adjust the temperature of the developer.
  • An object of the present invention is to provide a substrate processing apparatus capable of suppressing an increase in variation in substrate processing due to the temperature of a processing liquid while improving throughput.
  • the substrate processing apparatus is a processing unit that performs a predetermined treatment on a substrate using a processing liquid, a processing liquid supply system that supplies the processing liquid to the processing unit, and a processing liquid supply system.
  • the treatment liquid supply system includes a first storage portion for storing the treatment liquid, a first treatment liquid flow path from the first storage portion to the treatment portion, and a treatment liquid supply system including an adjusting unit for adjusting the temperature of the liquid.
  • a second treatment liquid flow path that supplies the treatment liquid supplied from the liquid supply source to the first storage part is included, and the adjustment part matches the set temperature set for performing a predetermined treatment, or At least one of the first temperature control device that adjusts the temperature of the treatment liquid stored in the first storage unit so as to approach the temperature, and the second treatment liquid flow path so as to match or approach the set temperature. It includes a second temperature adjusting device for adjusting the temperature of the processing liquid flowing through the unit.
  • the processing liquid supplied from the processing liquid supply source is stored in the first storage unit through the second processing liquid flow path.
  • the temperature of the processing liquid flowing inside the second processing liquid flow path is adjusted to match or approach the set temperature.
  • the treatment liquid stored in the first storage unit is supplied to the treatment unit through the first treatment liquid flow path.
  • the temperature of the treatment liquid stored in the storage unit is adjusted so as to match or approach the set temperature.
  • a predetermined treatment is performed on the substrate using the treatment liquid.
  • the temperature of the processing liquid is adjusted stepwise by the first and second temperature adjusting devices in the processing liquid supply path from the processing liquid supply source to the processing unit.
  • the temperature adjusting ability of the treatment liquid is improved as compared with the case where only one of the first and second temperature adjusting devices is used.
  • individually controlling the first and second temperature adjusting devices it is possible to more appropriately adjust the temperature of the processing liquid in stages. As a result, it is possible to prevent the temperature of the processing liquid from deviating from the set temperature due to the ambient temperature of the substrate processing apparatus or the like.
  • the first temperature adjusting device may further adjust the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path so as to match or approach the set temperature.
  • the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path matches or approaches the set temperature.
  • the increase in variation in substrate processing due to the temperature of the processing liquid deviating from the set temperature is further suppressed.
  • the substrate processing apparatus further includes a second storage unit for storing the processing liquid supplied from the processing liquid supply source, and the second processing liquid flow path is a second storage unit and a first storage unit.
  • the second temperature adjusting device may further adjust the temperature of the processing liquid stored in the second storage portion so as to match or approach the set temperature.
  • the temperature of the treatment liquid stored in the second storage unit matches or approaches the set temperature.
  • the increase in variation in substrate processing due to the temperature of the processing liquid deviating from the set temperature is further suppressed.
  • the substrate processing apparatus may include a main body portion including a processing unit and a first storage unit, and a sub-main body unit that is arranged as a separate body from the main body unit and includes a second storage unit. ..
  • the temperature of the treatment liquid can be adjusted independently in the first and second storage units. Therefore, the temperature of the processing liquid supplied to the processing unit can be appropriately adjusted.
  • the main body portion and the sub-main body portion are provided so as to be separated from each other, and at least a part of the second processing liquid flow path may include a portion between the main body portion and the sub-main body portion.
  • the temperature of the processing liquid flowing in the portion of the second processing liquid flow path located between the main body portion and the sub main body portion is adjusted.
  • the treatment liquid flowing through the second treatment liquid flow path is suppressed from being affected by the temperature outside the main body portion and the sub main body portion.
  • the main body portion may be provided in the space where the downdraft is formed, and the first storage portion may be provided above the processing portion.
  • the heat generated in the processing unit flows downward due to the downdraft.
  • the treatment liquid stored in the first storage unit is suppressed from being affected by the heat generated in the treatment unit.
  • the substrate processing apparatus may further include a first accommodating chamber for accommodating the main main body portion and a second accommodating chamber for accommodating the sub-main body portion.
  • the predetermined process includes a developing process
  • the processing unit may include a developing device that supplies a developing solution as a processing solution to the substrate.
  • the substrate is developed with higher accuracy.
  • the present invention it is possible to suppress an increase in variation in substrate processing due to the temperature of the processing liquid while improving throughput.
  • FIG. 1 is a schematic block diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing an example of the configuration of the first and second temperature adjusting units of FIG.
  • FIG. 3 is a schematic plan view showing an example of the layout of each component shown in the substrate processing apparatus of FIG.
  • FIG. 4 is a schematic side view of the substrate processing apparatus of FIG.
  • FIG. 5 is a schematic block diagram showing a configuration of a substrate processing apparatus according to another embodiment.
  • the substrate is an FPD (Flat Panel Display) substrate, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk, which is used for a liquid crystal display device, an organic EL (Electro Luminescence) display device, or the like.
  • FPD Fluorescence Panel Display
  • a substrate for a photomask a substrate for a photomask
  • a ceramic substrate a substrate for a solar cell, or the like.
  • FIG. 1 is a schematic block diagram showing a configuration of a substrate processing device according to an embodiment of the present invention.
  • the substrate processing apparatus 100 is provided adjacent to the exposure apparatus 500 in the clean room CL, and includes an apparatus main body 200 and a chemical solution cabinet 300.
  • the device main body 200 and the chemical solution cabinet 300 are provided as separate bodies from each other.
  • the device main body 200 includes a control device 210, a coating processing unit 220, a developing processing unit 230, a plurality of heat treatment units 240, a plurality of transport units 250, a first temperature adjusting unit 260, and a plurality of buffer tanks BT1. Further, the chemical liquid cabinet 300 includes a second temperature adjusting unit 310 and a buffer tank BT2.
  • the control device 210 includes, for example, a CPU and a memory, or a microcomputer, and includes a coating processing unit 220, a developing processing unit 230, a heat treatment unit 240, a transport unit 250, a first temperature adjusting unit 260, and a second temperature adjusting unit 310. Control the operation.
  • the device main body 200 includes a plurality of transport units 250, and each transport unit 250 has a transport robot that transports the substrate W.
  • the plurality of transport units 250 transport the substrate W between another transport robot provided outside the apparatus main body 200, a coating processing unit 220, a developing processing unit 230, a heat treatment unit 240, and an exposure device 500.
  • the coating processing unit 220 includes a plurality of coating units. Each coating unit forms a resist film on one surface of the untreated substrate W (coating treatment). The coating process W on which the resist film is formed is exposed by the exposure apparatus 500.
  • the development processing unit 230 includes a plurality of development units SD.
  • Each developing unit SD includes a spin chuck 91 and a developing nozzle 92.
  • the spin chuck 91 rotatably holds the substrate W after the exposure process by the exposure apparatus 500 in a horizontal posture.
  • the developer is supplied to the developing nozzle 92 from a developer supply source 1 provided outside the substrate processing apparatus 100 through a plurality of pipes p1, p2, p3 and a plurality of buffer tanks BT1 and BT2.
  • the developing nozzle 92 discharges the supplied developer onto the upper surface of the substrate W held by the spin chuck 91 (development processing).
  • the temperature of the developer to be supplied to the substrate W is preset in the substrate processing apparatus 100. This setting is performed, for example, by the user operating an operation unit (not shown). The setting contents are stored in the control device 210.
  • the temperature of the preset developer to be supplied to the substrate W is referred to as a set temperature. In the present embodiment, it is assumed that a common temperature is set for a plurality of substrates W processed by the substrate processing apparatus 100.
  • the device main body 200 includes a plurality of heat treatment units 240.
  • the plurality of heat treatment units 240 heat-treat the substrate W before and after the coating treatment by the coating treatment unit 220, the development treatment by the development processing unit 230, and the exposure treatment by the exposure apparatus 500.
  • the coating processing unit 220 may form an antireflection film on the substrate W.
  • the heat treatment unit 240 may be provided with a processing unit for performing an adhesion strengthening treatment for improving the adhesion between the substrate W and the antireflection film.
  • the coating processing unit 220 may form a resist cover film on the substrate W to protect the resist film formed on the substrate W.
  • a pipe p3 is provided between the developer supply source 1 and the buffer tank BT2 of the chemical solution cabinet 300.
  • the pipe p3 circulates the developer from the developer supply source 1 to the buffer tank BT2.
  • the developer flowing into the developer cabinet 300 from the developer supply source 1 is temporarily stored in the buffer tank BT2.
  • a plurality of pipes p2 are provided between the buffer tank BT2 of the chemical solution cabinet 300 and the plurality of buffer tanks BT1 of the apparatus main body 200.
  • the plurality of pipes p2 circulate the developing solution from the buffer tank BT2 to the plurality of buffer tanks BT1.
  • the developing solution flowing from the chemical solution cabinet 300 into the apparatus main body 200 is temporarily stored in the plurality of buffer tanks BT1.
  • the plurality of buffer tanks BT1 correspond to a plurality of development units SD provided in the development processing unit 230, respectively.
  • a pipe p1 is provided between each buffer tank BT1 and the developing unit SD corresponding to the buffer tank BT1.
  • Each pipe p1 circulates the developer from the buffer tank BT1 to the developing nozzle 92.
  • At least a part of the plurality of buffer tanks BT1 and BT2 and the plurality of pipes p1 to p3 are provided with fluid-related equipment (not shown) for controlling the supply state of the developer in the plurality of developing nozzles 92. Be done.
  • the first temperature adjusting unit 260 adjusts the temperature of the developing solution stored in each of the plurality of buffer tanks BT1 so as to match or approach the set temperature, as shown by the dotted arrow in FIG. Further, the first temperature adjusting unit 260 adjusts the temperature of the developing solution flowing through the plurality of pipes p1 so as to match or approach the set temperature, as shown by the dotted arrows and hatching in FIG.
  • the first temperature adjusting unit 260 may adjust the temperature of the developing solution flowing through a part of each pipe p1. Alternatively, the first temperature adjusting unit 260 does not have to adjust the temperature of the developing solution in the plurality of buffer tanks BT1 and adjust the temperature of the developing solution flowing through the plurality of pipes p1.
  • the second temperature adjusting unit 310 adjusts the temperature of the developing solution flowing through the plurality of pipes p2 so as to match or approach the set temperature, as shown by the dotted arrow and the dot pattern in FIG.
  • the second temperature adjusting unit 310 may adjust the temperature of the developing solution flowing through a part of each pipe p2. Further, the second temperature adjusting unit 310 adjusts the temperature of the developing solution stored in the buffer tank BT2 so as to match or approach the set temperature, as shown by the dotted arrow in FIG.
  • the second temperature adjusting unit 310 does not have to adjust the temperature of at least a part of the developing solution flowing through the plurality of pipes p2 and the temperature of the developing solution stored in the buffer tank BT2.
  • FIG. 2 is a diagram showing an example of the configuration of the first and second temperature adjusting units 260 and 310 of FIG.
  • the pipes p1, p2, and p3 of FIG. 1 are shown by thick solid lines.
  • the boundary portion between the apparatus main body portion 200 and the chemical solution cabinet 300 of FIG. 1 is shown by a dashed line.
  • the first temperature adjusting unit 260 includes a constant temperature water circulation system including a constant temperature bath c1, a circulation device c2, and a circulation pipe L1.
  • a constant temperature bath c1 for example, constant temperature water maintained at the above-mentioned set temperature is stored.
  • the constant temperature bath c1 is provided with a temperature adjusting device (not shown) for adjusting the temperature of the constant temperature water.
  • One end and the other end of the circulation pipe L1 are connected to the constant temperature bath c1.
  • the circulation pipe L1 is provided with a circulation device c2 such as a pump.
  • a part lp1 of the circulation pipe L1 is provided so as to come into contact with a wide range of the outer surface of the buffer tank BT1.
  • the part lp1 of the circulation pipe L1 may be provided so as to pass through the inside of the buffer tank BT1 instead of the outer peripheral surface of the buffer tank BT1.
  • the other portion lp2 of the circulation pipe L1 is provided so as to cover a part of the pipe p1.
  • a double pipe is formed in which the pipe p1 is an inner pipe and the other portion lp2 of the circulation pipe L1 is an outer pipe.
  • a space through which constant temperature water can flow is formed between the outer peripheral surface of the pipe p1 and the inner peripheral surface of the circulation pipe L1.
  • the circulation device c2 when the circulation device c2 operates, the constant temperature water circulates in the constant temperature tank c1 and the circulation pipe L1 as shown by the dotted arrow in FIG.
  • the temperature of the developing solution stored in the buffer tank BT1 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer surface of the buffer tank BT1.
  • the temperature of the developing solution existing in the pipe p1 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer peripheral surface of the pipe p1.
  • the second temperature adjusting unit 310 has the same configuration as the first temperature adjusting unit 260.
  • the second temperature adjusting unit 310 includes a constant temperature water circulation system including a constant temperature bath c11, a circulation device c12, and a circulation pipe L11.
  • the constant temperature bath c11 for example, constant temperature water maintained at the above-mentioned set temperature is stored.
  • the constant temperature bath c11 is provided with a temperature adjusting device (not shown) for adjusting the temperature of the constant temperature water.
  • One end and the other end of the circulation pipe L11 are connected to the constant temperature bath c11.
  • the circulation pipe L11 is provided with a circulation device c12.
  • a part lp11 of the circulation pipe L11 is provided so as to come into contact with a wide range of the outer surface of the buffer tank BT2. Further, the other portion lp12 of the circulation pipe L11 is provided so as to cover a part of the pipe p2.
  • a double pipe is formed in which the pipe p2 is an inner pipe and the other portion lp12 of the circulation pipe L11 is an outer pipe.
  • the circulation device c12 operates, the constant temperature water circulates in the constant temperature tank c11 and the circulation pipe L11.
  • the temperature of the developing solution stored in the buffer tank BT2 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer surface of the buffer tank BT2.
  • the temperature of the developing solution existing in the pipe p2 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer peripheral surface of the pipe p2.
  • the temperature of the constant temperature water used in the first temperature adjusting unit 260 and the temperature of the constant temperature water used in the second temperature adjusting unit 310 may be the same as or different from each other. Good.
  • the temperature of the developer in the developer supply source 1 (hereinafter referred to as the developer initial temperature) is higher than the set temperature.
  • the temperature of the constant temperature water used in the first temperature adjusting unit 260 is set as the set temperature
  • the temperature of the constant temperature water used in the second temperature adjusting unit 310 is set between the initial temperature of the developing solution and the set temperature. Intermediate temperature may be used. In this case, the temperature of the developer can be adjusted stepwise more appropriately.
  • each temperature adjusting unit is appropriately determined according to, for example, the capacity of the buffer tanks BT1 and BT2 and the lengths of the plurality of pipes p1 and p2.
  • a temperature sensor for detecting the temperature of the developing solution may be provided in a part of the buffer tank BT1 and the pipe p1.
  • the first temperature adjusting unit 260 may change the temperature of the constant temperature water so that the temperature of the developing solution flowing through the pipe p1 approaches the set temperature based on the temperature detected by the temperature sensor.
  • a temperature sensor for detecting the temperature of the developing solution may be provided in a part of the buffer tank BT2 and the pipe p2.
  • the second temperature adjusting unit 310 may change the temperature of the constant temperature water so that the temperature of the developer flowing through the pipe p2 approaches the set temperature based on the temperature detected by the temperature sensor.
  • FIG. 3 is a schematic plan view showing an example of the layout of each component shown in the substrate processing apparatus 100 of FIG. 1, and FIG. 4 is a schematic plan view of FIG. It is a schematic side view of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 is provided in the clean room CL together with the exposure apparatus 500.
  • the developer supply source 1 is arranged outside the clean room CL.
  • the device main body 200 of this example includes four blocks B1, B2, B3, and B4.
  • the blocks B1, B2, B3, and B4 are provided so as to be arranged in one direction in this order.
  • the exposure apparatus 500 is provided adjacent to the block B4.
  • Block B1 includes a transport unit 250.
  • the transport unit 250 functions as a carry-in / carry-out unit for the substrate W.
  • Block B2 includes a coating processing unit 220, a heat treatment unit 240, and a transport unit 250.
  • the coating processing unit 220 and the heat treatment unit 240 are provided so as to face each other with the transport unit 250 interposed therebetween.
  • Block B3 includes a developing unit 230, a heat treatment unit 240, a transport unit 250, and a first temperature adjusting unit 260 (FIG. 4).
  • the developing unit 230, the first temperature adjusting unit 260, and the heat treatment unit 240 are provided so as to face each other with the conveying unit 250 interposed therebetween.
  • Block B4 includes a transport unit 250.
  • the transport unit 250 functions as a transfer unit that transfers the substrate between the blocks B2 and B3 and the exposure apparatus 500.
  • the clean room CL is provided with a floor FL composed of grating.
  • an upper chamber and a lower chamber are formed in the clean room CL.
  • the apparatus main body 200 of the substrate processing apparatus 100 includes the first temperature adjusting unit 260 and is provided on the floor FL in the clean room CL. That is, the device main body 200 is housed in the upper chamber.
  • the chemical liquid cabinet 300 includes the second temperature adjusting unit 310, and is provided below the floor portion FL in the clean room CL. That is, the chemical solution cabinet 300 is housed in the lower chamber.
  • the plurality of buffer tanks BT1 provided in the apparatus main body 200 are provided at the upper end of the block B3.
  • a downdraft is formed inside the clean room CL by an airflow generator (not shown). Therefore, as described above, when the plurality of buffer tanks BT1 are provided above the plurality of developing units SD, the temperature around the plurality of buffer tanks BT1 is the heat generated from the plurality of developing units SD. Less susceptible. As a result, the developer stored in the plurality of buffer tanks BT1 is suppressed from being affected by the heat generated from the plurality of developing units SD.
  • the apparatus main body 200 and the chemical solution cabinet 300 are provided so as to be separated from each other.
  • the plurality of pipes p2 for supplying the developer from the chemical solution cabinet 300 to the device main body 200 are located between the device main body 200 and the chemical solution cabinet 300.
  • the second temperature adjusting unit 310 adjusts the temperature of the developing solution existing inside at least the portion of each pipe p2 located between the apparatus main body 200 and the chemical solution cabinet 300. As a result, it is possible to prevent the developer existing in each pipe p2 from being affected by the temperature outside the apparatus main body 200 and the chemical solution cabinet 300, that is, in the clean room CL.
  • the developer supplied from the developer supply source 1 is stored in the plurality of buffer tanks BT1 through the pipe p3, the buffer tank BT2, and the plurality of pipes p2. Further, the developing solution stored in each buffer tank BT1 is supplied to the developing unit SD through the pipe p1, and the substrate W is subjected to the developing process.
  • the temperatures of the developer stored in the buffer tank BT1 and the developer existing in the pipe p1 are adjusted by the first temperature adjusting unit 260 so as to approach the set temperature. Further, the temperatures of the developer stored in the buffer tank BT2 and the developer existing in the pipe p2 are adjusted by the second temperature adjusting unit 310 so as to approach the set temperature.
  • the temperature of the developer is adjusted stepwise in the developer supply system from the developer supply source 1 to the developer unit SD.
  • the temperature adjusting ability of the developing solution is improved as compared with the case where only one of the first and second temperature adjusting units 260 and 310 is used.
  • by individually controlling the first and second temperature adjusting units 260 and 310 it is possible to more appropriately adjust the temperature of the developing solution in stages. As a result, it is possible to prevent the temperature of the developing solution supplied to the substrate W from deviating from the set temperature due to the ambient temperature of the substrate processing apparatus 100 or the like.
  • the present inventor adjusts the temperature of the developing solution by the first and second temperature adjusting units 260 and 310 using the substrate processing apparatus 100 of FIGS. 3 and 4 as an example. While doing so, the development process was continuously performed on the 25 substrates W. Then, the line width of the pattern obtained by the development treatment was measured for all 25 substrates W. As a result, it was not confirmed that the line width of the pattern changed (the line width became larger) as the number of processed sheets increased. This means that the increase in variation in substrate processing was suppressed.
  • the present inventor continuously adjusts the temperature of the developing solution only by the first temperature adjusting unit 260 using the substrate processing apparatus 100 of FIGS. 3 and 4 for 25 substrates W. Development processing was performed. Then, the line width of the pattern obtained by the development treatment was measured for all 25 substrates W. As a result, it was confirmed that the line width of the pattern changes (the line width increases) as the number of processed sheets increases. This means that the variation in the substrate processing gradually increases as the substrate W is continuously processed. The tendency of the line width of the pattern to change (the line width becomes large) is considered to be due to the fact that the developer whose temperature has not been sufficiently adjusted is supplied to the substrate W.
  • the temperature of the developer supplied to the developing unit SD is adjusted by the first and second temperature adjusting units 260 and 310, but the present invention Is not limited to this.
  • the first and second temperature adjusting units 260 and 310 may adjust the temperature of the processing liquid other than the developing solution.
  • FIG. 5 is a schematic block diagram showing the configuration of the substrate processing apparatus 100 according to another embodiment. The difference between the substrate processing apparatus 100 of FIG. 5 and the substrate processing apparatus 100 of FIG. 1 according to the above embodiment will be described.
  • each developing unit SD includes a rinse nozzle 99 in addition to the spin chuck 91 and the developing nozzle 92.
  • the rinse nozzle 99 is supplied with the rinse liquid from the rinse liquid supply source 12 provided outside the substrate processing device 100 through the plurality of pipes p31, p32, p33 and the plurality of buffer tanks BT11 and BT12.
  • the rinse solution is, for example, pure water or a surfactant.
  • the rinse nozzle 99 discharges the supplied rinse liquid onto the upper surface of the substrate W held by the spin chuck 91.
  • the developer tends to diffuse on the upper surface of the substrate W during the developing process.
  • the rinse nozzle 99 discharges the supplied rinse liquid onto the upper surface of the substrate W held by the spin chuck 91 when the development process is stopped. As a result, the developing process is stopped.
  • a pipe p33 is provided between the rinse liquid supply source 12 and the buffer tank BT12 of the chemical liquid cabinet 300.
  • the pipe p33 circulates the rinse liquid from the rinse liquid supply source 12 to the buffer tank BT12.
  • the rinse liquid flowing into the chemical liquid cabinet 300 from the rinse liquid supply source 12 is temporarily stored in the buffer tank BT12.
  • a plurality of pipes p32 are provided between the buffer tank BT12 of the chemical solution cabinet 300 and the plurality of buffer tanks BT11 of the apparatus main body 200.
  • the plurality of pipes p32 circulate the rinse liquid from the buffer tank BT12 to the plurality of buffer tanks BT11.
  • the rinse liquid flowing from the chemical liquid cabinet 300 into the apparatus main body 200 is temporarily stored in the plurality of buffer tanks BT11.
  • the plurality of buffer tanks BT11 correspond to a plurality of development units SD provided in the development processing unit 230, respectively.
  • a pipe p31 is provided between each buffer tank BT11 and the developing unit SD corresponding to the buffer tank BT11.
  • Each pipe p31 circulates the developer from the buffer tank BT11 to the rinse nozzle 99.
  • At least a part of the plurality of buffer tanks BT11 and BT12 and the plurality of pipes p31 to p33 are provided with fluid-related equipment (not shown) for controlling the supply state of the rinse liquid in the plurality of rinse nozzles 99. Be done.
  • the first temperature adjusting unit 260 of this example sets the temperature of the rinsing solution stored in each of the plurality of buffer tanks BT11 in addition to the temperature of the developing solution. Adjust to match or approach the set temperature. Further, the first temperature adjusting unit 260 adjusts the temperature of the rinse liquid flowing through the plurality of pipes p31 so as to match or approach the set temperature of the developing liquid, as shown by the dotted arrows and hatching in FIG. To do.
  • the second temperature adjusting unit 310 sets the temperature of the rinsing solution flowing through the plurality of pipes p32 as the set temperature of the developing solution in addition to the temperature of the developing solution. Adjust to match or approach. Further, the second temperature adjusting unit 310 adjusts the temperature of the rinsing solution stored in the buffer tank BT12 so as to match or approach the set temperature of the developing solution, as shown by the dotted arrow in FIG. ...
  • the temperature of the rinsing solution supplied to the substrate W immediately before the developing process and at the end of the developing process matches or becomes almost equal to the set temperature of the developing solution.
  • the temperature of the substrate W at the start and end of the developing process is suppressed from changing depending on the temperature of the rinsing liquid.
  • the processing state of the substrate W at the start and end of the development process is stabilized.
  • the temperature of the coating liquid for forming a resist film, an antireflection film, a resist cover film, or the like on the substrate W may be adjusted.
  • a plurality of buffer tanks BT1 are provided so as to correspond to the plurality of development units SD, but the present invention is not limited thereto.
  • one buffer tank BT1 common to a plurality of developing units SD may be provided.
  • a plurality of pipes p1 are provided so as to extend from one buffer tank BT1 to the plurality of developing units SD.
  • the first temperature adjusting unit 260 adjusts the temperature of the cleaning liquid existing in the buffer tank BT1 and the plurality of pipes p1.
  • one buffer tank BT2 commonly used for a plurality of developing units SD is provided, but the present invention is not limited to this.
  • a plurality of buffer tanks BT2 may be provided so as to correspond to the plurality of developing units SD.
  • a plurality of pipes p2 are provided so as to extend from the plurality of buffer tanks BT2 to the plurality of buffer tanks BT1.
  • the second temperature adjusting unit 310 adjusts the temperature of the cleaning liquid existing in the plurality of buffer tanks BT2 and the plurality of pipes p2.
  • the apparatus main body 200 and the chemical solution cabinet 300 are arranged as separate bodies, but the present invention is not limited thereto.
  • the chemical solution cabinet 300 or its internal configuration may be provided in the apparatus main body 200.
  • the chemical solution cabinet 300 is provided below the device main body 200, but the present invention is not limited thereto.
  • the chemical solution cabinet 300 may be provided on the same floor FL as the device main body 200.
  • the developing unit SD is an example of the processing unit
  • the developing solution supply source 1, the rinsing solution supply source 12, the pipes p1 to p3, p31 to p33, and the buffer tanks BT1, BT2, BT11, and BT12 are the processing liquids.
  • It is an example of a supply system
  • the first temperature adjusting unit 260 and the second temperature adjusting unit 310 are examples of the adjusting unit.
  • the plurality of buffer tanks BT1 and BT11 are examples of the first storage portion
  • the plurality of pipes p1 and p31 are examples of the first treatment liquid flow path
  • the pipes p2 and p32 are examples of the second treatment liquid flow.
  • An example of a road a first temperature adjusting unit 260 is an example of a first temperature adjusting device
  • a second temperature adjusting unit 310 is an example of a second temperature adjusting device
  • a substrate processing device 100 is a substrate. This is an example of a processing device.
  • the buffer tanks BT2 and BT12 are examples of the second storage unit
  • the apparatus main body 200 is an example of the main body
  • the chemical cabinet 300 is an example of the sub-main body
  • the upper chamber of the clean room CL is the second.
  • No. 1 is an example of the accommodation chamber
  • the lower chamber of the clean room CL is an example of the second accommodation chamber
  • the developing unit SD is an example of the developing apparatus.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Polarising Elements (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

In the present invention, a developing fluid that is supplied from a developing fluid supply source is collected in a buffer tank through piping. In at least a portion of the piping, the temperature of the developing fluid that flows therethrough is adjusted to be at or close to a set temperature preset for a developing process. The developing fluid collected in the buffer tank is supplied to a developing unit through the piping. In the buffer tank, the temperature of the developing fluid collected therein is adjusted to be at or close to the preset temperature. In the developing unit, a substrate is subjected to the developing process using the supplied developing fluid.

Description

基板処理装置Substrate processing equipment
　本発明は、基板に所定の処理を行う基板処理装置に関する。 The present invention relates to a substrate processing apparatus that performs a predetermined treatment on a substrate.
　従来より、液晶表示装置または有機ＥＬ（Electro Luminescence）表示装置等に用いられるＦＰＤ（Flat Panel Display）用基板、半導体基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板または太陽電池用基板等の各種基板に種々の処理を行うために、基板処理装置が用いられる。 Conventionally, FPD (Flat Panel Display) substrates, semiconductor substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, etc. , A substrate processing apparatus is used to perform various processing on various substrates such as a ceramic substrate or a substrate for a solar cell.
　基板処理装置は、例えば基板に現像処理を行う現像装置を含む。現像処理においては、基板上の露光処理後のレジスト膜に現像液が供給される。現像処理により基板上に形成されるレジスト膜のパターンの線幅は、現像液の温度に依存して変化する。そこで、パターンの線幅のばらつきの増大を防止するために、基板に供給される現像液の温度を予め定められた設定温度に調整する現像装置が提案されている。 The substrate processing apparatus includes, for example, a developing apparatus that develops a substrate. In the development process, a developer is supplied to the resist film after the exposure process on the substrate. The line width of the resist film pattern formed on the substrate by the developing process changes depending on the temperature of the developing solution. Therefore, in order to prevent an increase in the variation in the line width of the pattern, a developing device that adjusts the temperature of the developing solution supplied to the substrate to a predetermined set temperature has been proposed.
　例えば、特許文献１に記載された現像装置においては、現像液供給源から現像液バッファタンクに現像液が供給される。現像液バッファタンクに貯留された現像液が現像液配管を通して現像液吐出ノズルに供給される。このとき、現像液配管を流れる現像液の温度が、現像液配管を取り囲むように設けられた恒温水配管を流れる恒温水により調整される。
特開２０００－１８２９２６号公報 For example, in the developing apparatus described in Patent Document 1, the developing solution is supplied from the developing solution supply source to the developing solution buffer tank. The developer stored in the developer buffer tank is supplied to the developer discharge nozzle through the developer pipe. At this time, the temperature of the developer flowing through the developer pipe is adjusted by the constant temperature water flowing through the constant temperature water pipe provided so as to surround the developer pipe.
Japanese Unexamined Patent Publication No. 2000-182926
　現像処理では、１枚の基板に対して比較的多量の現像液が供給される。そのため、現像処理のスループットを向上させると、現像装置において単位時間当たりに使用されるべき現像液の消費量が増加する。この場合、現像液バッファタンクから現像液吐出ノズルに供給される現像液の温度を迅速に調整しなければならない。しかしながら、特許文献１に記載された現像装置では、求められる現像液の消費量に対して十分な温度調整能力が得られるとは限らない。 In the development process, a relatively large amount of developer is supplied to one substrate. Therefore, if the throughput of the developing process is improved, the consumption of the developer to be used per unit time in the developing apparatus increases. In this case, the temperature of the developer supplied from the developer buffer tank to the developer discharge nozzle must be adjusted quickly. However, the developing apparatus described in Patent Document 1 does not always have a sufficient temperature adjusting ability with respect to the required amount of developer consumed.
　特に、現像液バッファタンクに貯留される現像液の温度は、現像液の供給源から現像液バッファタンクに至る現像液の経路の周囲の温度に依存する。そのため、季節の変化等により現像液の経路の周囲の温度が設定温度から大きくずれると、現像液の温度調整が困難になる。 In particular, the temperature of the developer stored in the developer buffer tank depends on the temperature around the developer path from the developer source to the developer buffer tank. Therefore, if the temperature around the developer path deviates significantly from the set temperature due to seasonal changes or the like, it becomes difficult to adjust the temperature of the developer.
　本発明の目的は、スループットを向上させつつ処理液の温度に起因する基板処理のばらつきの増大を抑制することが可能な基板処理装置を提供することである。 An object of the present invention is to provide a substrate processing apparatus capable of suppressing an increase in variation in substrate processing due to the temperature of a processing liquid while improving throughput.
　（１）本発明の一局面に従う基板処理装置は、処理液を用いて基板に所定の処理を行う処理部と、処理部に処理液を供給する処理液供給系と、処理液供給系において処理液の温度を調整する調整部とを備え、処理液供給系は、処理液を貯留する第１の貯留部と、第１の貯留部から処理部に至る第１の処理液流路と、処理液供給源から供給される処理液を第１の貯留部に供給する第２の処理液流路とを含み、調整部は、所定の処理を行うために設定された設定温度に一致するかまたは近づくように、第１の貯留部に貯留された処理液の温度を調整する第１の温度調整装置と、設定温度に一致するかまたは近づくように、第２の処理液流路のうち少なくとも一部を流れる処理液の温度を調整する第２の温度調整装置とを含む。 (1) The substrate processing apparatus according to one aspect of the present invention is a processing unit that performs a predetermined treatment on a substrate using a processing liquid, a processing liquid supply system that supplies the processing liquid to the processing unit, and a processing liquid supply system. The treatment liquid supply system includes a first storage portion for storing the treatment liquid, a first treatment liquid flow path from the first storage portion to the treatment portion, and a treatment liquid supply system including an adjusting unit for adjusting the temperature of the liquid. A second treatment liquid flow path that supplies the treatment liquid supplied from the liquid supply source to the first storage part is included, and the adjustment part matches the set temperature set for performing a predetermined treatment, or At least one of the first temperature control device that adjusts the temperature of the treatment liquid stored in the first storage unit so as to approach the temperature, and the second treatment liquid flow path so as to match or approach the set temperature. It includes a second temperature adjusting device for adjusting the temperature of the processing liquid flowing through the unit.
　その基板処理装置においては、処理液供給源から供給される処理液が第２の処理液流路を通して第１の貯留部に貯留される。第２の処理液流路のうち少なくとも一部においては、その内部を流れる処理液の温度が設定温度に一致するかまたは近づくように調整される。また、第１の貯留部に貯留された処理液が第１の処理液流路を通して処理部に供給される。第１の貯留部においては、その内部に貯留された処理液の温度が設定温度に一致するかまたは近づくように調整される。処理部においては、処理液を用いて基板に所定の処理が行われる。 In the substrate processing apparatus, the processing liquid supplied from the processing liquid supply source is stored in the first storage unit through the second processing liquid flow path. In at least a part of the second processing liquid flow path, the temperature of the processing liquid flowing inside the second processing liquid flow path is adjusted to match or approach the set temperature. Further, the treatment liquid stored in the first storage unit is supplied to the treatment unit through the first treatment liquid flow path. In the first storage unit, the temperature of the treatment liquid stored in the storage unit is adjusted so as to match or approach the set temperature. In the processing unit, a predetermined treatment is performed on the substrate using the treatment liquid.
　上記の構成によれば、処理液供給源から処理部に至る処理液供給経路において、第１および第２の温度調整装置により段階的に処理液の温度調整が行われる。それにより、第１および第２の温度調整装置のうちいずれか一方のみが用いられる場合に比べて、処理液の温度調整能力が向上する。また、第１および第２の温度調整装置を個別に制御することにより、段階的な処理液の温度調整をより適切に行うことが可能である。これにより、基板処理装置の周囲の温度等に起因して処理液の温度が設定された温度からずれることを抑制することができる。 According to the above configuration, the temperature of the processing liquid is adjusted stepwise by the first and second temperature adjusting devices in the processing liquid supply path from the processing liquid supply source to the processing unit. As a result, the temperature adjusting ability of the treatment liquid is improved as compared with the case where only one of the first and second temperature adjusting devices is used. Further, by individually controlling the first and second temperature adjusting devices, it is possible to more appropriately adjust the temperature of the processing liquid in stages. As a result, it is possible to prevent the temperature of the processing liquid from deviating from the set temperature due to the ambient temperature of the substrate processing apparatus or the like.
　これらの結果、スループットを向上させつつ処理液の温度に起因する基板処理のばらつきの増大を抑制することが可能になる。 As a result, it becomes possible to suppress an increase in variation in substrate processing due to the temperature of the processing liquid while improving the throughput.
　（２）第１の温度調整装置は、設定温度に一致するかまたは近づくように、第１の処理液流路のうち少なくとも一部を流れる処理液の温度をさらに調整してもよい。 (2) The first temperature adjusting device may further adjust the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path so as to match or approach the set temperature.
　この場合、第１の処理液流路のうち少なくとも一部を流れる処理液の温度が設定温度に一致するかまたは近づく。それにより、処理液の温度が設定温度からずれることに起因する基板処理のばらつきの増大がさらに抑制される。 In this case, the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path matches or approaches the set temperature. As a result, the increase in variation in substrate processing due to the temperature of the processing liquid deviating from the set temperature is further suppressed.
　（３）基板処理装置は、処理液供給源から供給される処理液を貯留する第２の貯留部をさらに備え、第２の処理液流路は、第２の貯留部と第１の貯留部とをつなぐように設けられ、第２の温度調整装置は、設定温度に一致するかまたは近づくように、第２の貯留部に貯留された処理液の温度をさらに調整してもよい。 (3) The substrate processing apparatus further includes a second storage unit for storing the processing liquid supplied from the processing liquid supply source, and the second processing liquid flow path is a second storage unit and a first storage unit. The second temperature adjusting device may further adjust the temperature of the processing liquid stored in the second storage portion so as to match or approach the set temperature.
　この場合、第２の貯留部に貯留される処理液の温度が設定温度に一致するかまたは近づく。それにより、処理液の温度が設定温度からずれることに起因する基板処理のばらつきの増大がさらに抑制される。 In this case, the temperature of the treatment liquid stored in the second storage unit matches or approaches the set temperature. As a result, the increase in variation in substrate processing due to the temperature of the processing liquid deviating from the set temperature is further suppressed.
　（４）基板処理装置は、処理部および第１の貯留部を含む主本体部と、主本体部とは別体として配置され、第２の貯留部を含む副本体部とを備えてもよい。 (4) The substrate processing apparatus may include a main body portion including a processing unit and a first storage unit, and a sub-main body unit that is arranged as a separate body from the main body unit and includes a second storage unit. ..
　この場合、第１および第２の貯留部において独立して処理液の温度を調整することができる。したがって、処理部に供給される処理液の温度を適切に調整することができる。 In this case, the temperature of the treatment liquid can be adjusted independently in the first and second storage units. Therefore, the temperature of the processing liquid supplied to the processing unit can be appropriately adjusted.
　（５）主本体部と副本体部とは互いに離間するように設けられ、第２の処理液流路の少なくとも一部は、主本体部と副本体部との間の部分を含んでもよい。 (5) The main body portion and the sub-main body portion are provided so as to be separated from each other, and at least a part of the second processing liquid flow path may include a portion between the main body portion and the sub-main body portion.
　この場合、第２の処理液流路のうち主本体部と副本体部との間に位置する部分を流れる処理液の温度が調整される。それにより、第２の処理液流路を流れる処理液が主本体部および副本体部の外部の温度の影響を受けることが抑制される。 In this case, the temperature of the processing liquid flowing in the portion of the second processing liquid flow path located between the main body portion and the sub main body portion is adjusted. As a result, the treatment liquid flowing through the second treatment liquid flow path is suppressed from being affected by the temperature outside the main body portion and the sub main body portion.
　（６）主本体部は、下降気流が形成された空間内に設けられ、第１の貯留部は、処理部よりも上方に設けられてもよい。 (6) The main body portion may be provided in the space where the downdraft is formed, and the first storage portion may be provided above the processing portion.
　この場合、処理部において発生する熱は下降気流により下方に流れる。それにより、第１の貯留部に貯留される処理液が処理部で発生する熱の影響を受けることが抑制される。 In this case, the heat generated in the processing unit flows downward due to the downdraft. As a result, the treatment liquid stored in the first storage unit is suppressed from being affected by the heat generated in the treatment unit.
　（７）基板処理装置は、主本体部を収容する第１の収容室と、副本体部を収容する第２の収容室とをさらに備えてもよい。 (7) The substrate processing apparatus may further include a first accommodating chamber for accommodating the main main body portion and a second accommodating chamber for accommodating the sub-main body portion.
　この場合、第２の処理液流路が長くなる場合でも、第２の処理液流路のうち少なくとも一部を流れる処理液の温度が調整される。したがって、レイアウトの自由度が確保されつつ、基板処理のばらつきの増大が抑制される。 In this case, even if the second treatment liquid flow path becomes long, the temperature of the treatment liquid flowing through at least a part of the second treatment liquid flow path is adjusted. Therefore, the degree of freedom in layout is ensured, and the increase in variation in substrate processing is suppressed.
　（８）所定の処理は現像処理を含み、処理部は、処理液として現像液を基板に供給する現像装置を含んでもよい。 (8) The predetermined process includes a developing process, and the processing unit may include a developing device that supplies a developing solution as a processing solution to the substrate.
　この場合、より高い精度で基板に現像処理が行われる。 In this case, the substrate is developed with higher accuracy.
　本発明によれば、スループットを向上させつつ処理液の温度に起因する基板処理のばらつきの増大を抑制することが可能になる。 According to the present invention, it is possible to suppress an increase in variation in substrate processing due to the temperature of the processing liquid while improving throughput.
図１は本発明の一実施の形態に係る基板処理装置の構成を示す模式的ブロック図である。FIG. 1 is a schematic block diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. 図２は図１の第１および第２の温度調整部の構成の一例を示す図である。FIG. 2 is a diagram showing an example of the configuration of the first and second temperature adjusting units of FIG. 図３は図１の基板処理装置に示される各構成要素のレイアウトの一例を示す模式的平面図である。FIG. 3 is a schematic plan view showing an example of the layout of each component shown in the substrate processing apparatus of FIG. 図４は図３の基板処理装置の模式的側面図である。FIG. 4 is a schematic side view of the substrate processing apparatus of FIG. 図５は他の実施の形態に係る基板処理装置の構成を示す模式的ブロック図である。FIG. 5 is a schematic block diagram showing a configuration of a substrate processing apparatus according to another embodiment.
　以下、本発明の実施の形態に係る基板処理装置について図面を参照しつつ説明する。以下の説明において、基板とは、液晶表示装置または有機ＥＬ（Electro Luminescence）表示装置等に用いられるＦＰＤ（Flat Panel Display）用基板、半導体基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板または太陽電池用基板等をいう。 Hereinafter, the substrate processing apparatus according to the embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate is an FPD (Flat Panel Display) substrate, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk, which is used for a liquid crystal display device, an organic EL (Electro Luminescence) display device, or the like. Refers to a substrate, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, or the like.
　［１］基板処理装置の構成
　図１は、本発明の一実施の形態に係る基板処理装置の構成を示す模式的ブロック図である。図１に示すように、基板処理装置１００は、クリーンルームＣＬ内で露光装置５００に隣接して設けられ、装置本体部２００および薬液キャビネット３００を備える。装置本体部２００および薬液キャビネット３００は互いに別体として設けられる。 [1] Configuration of Substrate Processing Device FIG. 1 is a schematic block diagram showing a configuration of a substrate processing device according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 is provided adjacent to the exposure apparatus 500 in the clean room CL, and includes an apparatus main body 200 and a chemical solution cabinet 300. The device main body 200 and the chemical solution cabinet 300 are provided as separate bodies from each other.
　装置本体部２００は、制御装置２１０、塗布処理部２２０、現像処理部２３０、複数の熱処理部２４０、複数の搬送部２５０、第１の温度調整部２６０および複数のバッファタンクＢＴ１を含む。また、薬液キャビネット３００は、第２の温度調整部３１０および一のバッファタンクＢＴ２を含む。 The device main body 200 includes a control device 210, a coating processing unit 220, a developing processing unit 230, a plurality of heat treatment units 240, a plurality of transport units 250, a first temperature adjusting unit 260, and a plurality of buffer tanks BT1. Further, the chemical liquid cabinet 300 includes a second temperature adjusting unit 310 and a buffer tank BT2.
　制御装置２１０は、例えばＣＰＵおよびメモリ、またはマイクロコンピュータを含み、塗布処理部２２０、現像処理部２３０、熱処理部２４０、搬送部２５０、第１の温度調整部２６０および第２の温度調整部３１０の動作を制御する。 The control device 210 includes, for example, a CPU and a memory, or a microcomputer, and includes a coating processing unit 220, a developing processing unit 230, a heat treatment unit 240, a transport unit 250, a first temperature adjusting unit 260, and a second temperature adjusting unit 310. Control the operation.
　装置本体部２００は複数の搬送部２５０を含み、各搬送部２５０は基板Ｗを搬送する搬送ロボットを有する。複数の搬送部２５０は、基板Ｗを装置本体部２００の外部に設けられる他の搬送ロボット、塗布処理部２２０、現像処理部２３０、熱処理部２４０および露光装置５００の間で搬送する。 The device main body 200 includes a plurality of transport units 250, and each transport unit 250 has a transport robot that transports the substrate W. The plurality of transport units 250 transport the substrate W between another transport robot provided outside the apparatus main body 200, a coating processing unit 220, a developing processing unit 230, a heat treatment unit 240, and an exposure device 500.
　塗布処理部２２０は、複数の塗布ユニットを含む。各塗布ユニットは、未処理の基板Ｗの一面上にレジスト膜を形成する（塗布処理）。レジスト膜が形成された塗布処理後の基板Ｗには、露光装置５００において露光処理が行われる。 The coating processing unit 220 includes a plurality of coating units. Each coating unit forms a resist film on one surface of the untreated substrate W (coating treatment). The coating process W on which the resist film is formed is exposed by the exposure apparatus 500.
　現像処理部２３０は、複数の現像ユニットＳＤを含む。各現像ユニットＳＤは、スピンチャック９１および現像ノズル９２を含む。スピンチャック９１は、露光装置５００による露光処理後の基板Ｗを水平姿勢で回転可能に保持する。現像ノズル９２には、基板処理装置１００の外部に設けられる現像液供給源１から、複数の配管ｐ１，ｐ２，ｐ３および複数のバッファタンクＢＴ１，ＢＴ２を通して現像液が供給される。現像ノズル９２は、供給された現像液をスピンチャック９１により保持された基板Ｗの上面に吐出する（現像処理）。 The development processing unit 230 includes a plurality of development units SD. Each developing unit SD includes a spin chuck 91 and a developing nozzle 92. The spin chuck 91 rotatably holds the substrate W after the exposure process by the exposure apparatus 500 in a horizontal posture. The developer is supplied to the developing nozzle 92 from a developer supply source 1 provided outside the substrate processing apparatus 100 through a plurality of pipes p1, p2, p3 and a plurality of buffer tanks BT1 and BT2. The developing nozzle 92 discharges the supplied developer onto the upper surface of the substrate W held by the spin chuck 91 (development processing).
　この現像処理に関して、基板処理装置１００においては基板Ｗに供給されるべき現像液の温度が予め設定される。この設定は例えば使用者が図示しない操作部を操作することにより行われる。設定内容は制御装置２１０に記憶される。以下の説明では、基板Ｗに供給されるべき予め設定された現像液の温度を設定温度と呼ぶ。本実施の形態では、基板処理装置１００において処理される複数の基板Ｗについて共通の温度が設定されているものとする。 Regarding this development process, the temperature of the developer to be supplied to the substrate W is preset in the substrate processing apparatus 100. This setting is performed, for example, by the user operating an operation unit (not shown). The setting contents are stored in the control device 210. In the following description, the temperature of the preset developer to be supplied to the substrate W is referred to as a set temperature. In the present embodiment, it is assumed that a common temperature is set for a plurality of substrates W processed by the substrate processing apparatus 100.
　装置本体部２００は複数の熱処理部２４０を含む。複数の熱処理部２４０は、塗布処理部２２０による塗布処理、現像処理部２３０による現像処理、および露光装置５００による露光処理の前後に基板Ｗの熱処理を行う。 The device main body 200 includes a plurality of heat treatment units 240. The plurality of heat treatment units 240 heat-treat the substrate W before and after the coating treatment by the coating treatment unit 220, the development treatment by the development processing unit 230, and the exposure treatment by the exposure apparatus 500.
　なお、塗布処理部２２０は、基板Ｗに反射防止膜を形成してもよい。この場合、熱処理部２４０には、基板Ｗと反射防止膜との密着性を向上させるための密着強化処理を行うための処理ユニットが設けられてもよい。また、塗布処理部２２０は、基板Ｗ上に形成されたレジスト膜を保護するためのレジストカバー膜を基板Ｗに形成してもよい。 The coating processing unit 220 may form an antireflection film on the substrate W. In this case, the heat treatment unit 240 may be provided with a processing unit for performing an adhesion strengthening treatment for improving the adhesion between the substrate W and the antireflection film. Further, the coating processing unit 220 may form a resist cover film on the substrate W to protect the resist film formed on the substrate W.
　現像ユニットＳＤに現像液を供給する現像液供給系に関して、図１の例においては、現像液供給源１と薬液キャビネット３００のバッファタンクＢＴ２との間に、配管ｐ３が設けられている。配管ｐ３は、現像液供給源１からバッファタンクＢＴ２に現像液を流通させる。それにより、現像液供給源１から薬液キャビネット３００に流入する現像液がバッファタンクＢＴ２に一時的に貯留される。 Regarding the developer supply system that supplies the developer to the developer unit SD, in the example of FIG. 1, a pipe p3 is provided between the developer supply source 1 and the buffer tank BT2 of the chemical solution cabinet 300. The pipe p3 circulates the developer from the developer supply source 1 to the buffer tank BT2. As a result, the developer flowing into the developer cabinet 300 from the developer supply source 1 is temporarily stored in the buffer tank BT2.
　また、薬液キャビネット３００のバッファタンクＢＴ２と装置本体部２００の複数のバッファタンクＢＴ１との間に、複数の配管ｐ２が設けられている。複数の配管ｐ２は、バッファタンクＢＴ２から複数のバッファタンクＢＴ１に現像液をそれぞれ流通させる。それにより、薬液キャビネット３００から装置本体部２００に流入する現像液が複数のバッファタンクＢＴ１に一時的に貯留される。 Further, a plurality of pipes p2 are provided between the buffer tank BT2 of the chemical solution cabinet 300 and the plurality of buffer tanks BT1 of the apparatus main body 200. The plurality of pipes p2 circulate the developing solution from the buffer tank BT2 to the plurality of buffer tanks BT1. As a result, the developing solution flowing from the chemical solution cabinet 300 into the apparatus main body 200 is temporarily stored in the plurality of buffer tanks BT1.
　複数のバッファタンクＢＴ１は、現像処理部２３０に設けられる複数の現像ユニットＳＤにそれぞれ対応する。装置本体部２００においては、各バッファタンクＢＴ１とそのバッファタンクＢＴ１に対応する現像ユニットＳＤとの間に、配管ｐ１が設けられている。各配管ｐ１は、バッファタンクＢＴ１から現像ノズル９２に現像液を流通させる。 The plurality of buffer tanks BT1 correspond to a plurality of development units SD provided in the development processing unit 230, respectively. In the apparatus main body 200, a pipe p1 is provided between each buffer tank BT1 and the developing unit SD corresponding to the buffer tank BT1. Each pipe p1 circulates the developer from the buffer tank BT1 to the developing nozzle 92.
　なお、複数のバッファタンクＢＴ１，ＢＴ２および複数の配管ｐ１～ｐ３のうち少なくとも一部には、複数の現像ノズル９２における現像液の供給状態を制御するための流体関連機器（図示せず）が設けられる。 At least a part of the plurality of buffer tanks BT1 and BT2 and the plurality of pipes p1 to p3 are provided with fluid-related equipment (not shown) for controlling the supply state of the developer in the plurality of developing nozzles 92. Be done.
　第１の温度調整部２６０は、図１に点線の矢印で示すように、複数のバッファタンクＢＴ１にそれぞれ貯留された現像液の温度を、設定温度に一致するかまたは近づくように調整する。また、第１の温度調整部２６０は、図１に点線の矢印およびハッチングで示すように、複数の配管ｐ１を流れる現像液の温度を、設定温度に一致するかまたは近づくように調整する。なお、第１の温度調整部２６０は、各配管ｐ１の一部を流れる現像液の温度を調整してもよい。あるいは、第１の温度調整部２６０は、複数のバッファタンクＢＴ１内の現像液の温度を調整し、複数の配管ｐ１を流れる現像液の温度を調整しなくてもよい。 The first temperature adjusting unit 260 adjusts the temperature of the developing solution stored in each of the plurality of buffer tanks BT1 so as to match or approach the set temperature, as shown by the dotted arrow in FIG. Further, the first temperature adjusting unit 260 adjusts the temperature of the developing solution flowing through the plurality of pipes p1 so as to match or approach the set temperature, as shown by the dotted arrows and hatching in FIG. The first temperature adjusting unit 260 may adjust the temperature of the developing solution flowing through a part of each pipe p1. Alternatively, the first temperature adjusting unit 260 does not have to adjust the temperature of the developing solution in the plurality of buffer tanks BT1 and adjust the temperature of the developing solution flowing through the plurality of pipes p1.
　第２の温度調整部３１０は、図１に点線の矢印およびドットパターンで示すように、複数の配管ｐ２を流れる現像液の温度を、設定温度に一致するかまたは近づくように調整する。なお、第２の温度調整部３１０は、各配管ｐ２の一部を流れる現像液の温度を調整してもよい。また、第２の温度調整部３１０は、図１に点線の矢印で示すように、バッファタンクＢＴ２に貯留された現像液の温度を、設定温度に一致するかまたは近づくように調整する。なお、第２の温度調整部３１０は、複数の配管ｐ２を流れる現像液の少なくとも一部の温度を調整し、バッファタンクＢＴ２に貯留された現像液の温度を調整しなくてもよい。 The second temperature adjusting unit 310 adjusts the temperature of the developing solution flowing through the plurality of pipes p2 so as to match or approach the set temperature, as shown by the dotted arrow and the dot pattern in FIG. The second temperature adjusting unit 310 may adjust the temperature of the developing solution flowing through a part of each pipe p2. Further, the second temperature adjusting unit 310 adjusts the temperature of the developing solution stored in the buffer tank BT2 so as to match or approach the set temperature, as shown by the dotted arrow in FIG. The second temperature adjusting unit 310 does not have to adjust the temperature of at least a part of the developing solution flowing through the plurality of pipes p2 and the temperature of the developing solution stored in the buffer tank BT2.
　［２］第１の温度調整部２６０および第２の温度調整部３１０の構成
　図２は、図１の第１および第２の温度調整部２６０，３１０の構成の一例を示す図である。図２では、図１の配管ｐ１，ｐ２，ｐ３が太い実線で示される。また、図２では、図１の装置本体部２００と薬液キャビネット３００との境界部分が一点鎖線で示される。 [2] Configuration of First Temperature Adjusting Unit 260 and Second Temperature Adjusting Unit 310 FIG. 2 is a diagram showing an example of the configuration of the first and second temperature adjusting units 260 and 310 of FIG. In FIG. 2, the pipes p1, p2, and p3 of FIG. 1 are shown by thick solid lines. Further, in FIG. 2, the boundary portion between the apparatus main body portion 200 and the chemical solution cabinet 300 of FIG. 1 is shown by a dashed line.
　図２に示すように、第１の温度調整部２６０は、恒温槽ｃ１、循環装置ｃ２および循環配管Ｌ１を含む恒温水循環系を備える。恒温槽ｃ１には、例えば上記の設定温度に保たれた恒温水が貯留される。また、恒温槽ｃ１には、恒温水の温度を調整する温度調整装置（図示せず）が設けられている。循環配管Ｌ１の一端および他端は恒温槽ｃ１に接続されている。循環配管Ｌ１には、ポンプ等の循環装置ｃ２が設けられている。 As shown in FIG. 2, the first temperature adjusting unit 260 includes a constant temperature water circulation system including a constant temperature bath c1, a circulation device c2, and a circulation pipe L1. In the constant temperature bath c1, for example, constant temperature water maintained at the above-mentioned set temperature is stored. Further, the constant temperature bath c1 is provided with a temperature adjusting device (not shown) for adjusting the temperature of the constant temperature water. One end and the other end of the circulation pipe L1 are connected to the constant temperature bath c1. The circulation pipe L1 is provided with a circulation device c2 such as a pump.
　循環配管Ｌ１の一部分ｌｐ１は、バッファタンクＢＴ１の外表面の広い範囲に接触するように設けられている。なお、循環配管Ｌ１の一部分ｌｐ１は、バッファタンクＢＴ１の外周面に代えて、バッファタンクＢＴ１の内部を通過するように設けられてもよい。また、循環配管Ｌ１の他の部分ｌｐ２は、配管ｐ１の一部を覆うように設けられる。これにより、配管ｐ１を内管とし、循環配管Ｌ１の他の部分ｌｐ２を外管とする二重配管が形成される。配管ｐ１の外周面と循環配管Ｌ１の内周面との間には、恒温水を流通させることが可能な空間が形成されている。 A part lp1 of the circulation pipe L1 is provided so as to come into contact with a wide range of the outer surface of the buffer tank BT1. The part lp1 of the circulation pipe L1 may be provided so as to pass through the inside of the buffer tank BT1 instead of the outer peripheral surface of the buffer tank BT1. Further, the other portion lp2 of the circulation pipe L1 is provided so as to cover a part of the pipe p1. As a result, a double pipe is formed in which the pipe p1 is an inner pipe and the other portion lp2 of the circulation pipe L1 is an outer pipe. A space through which constant temperature water can flow is formed between the outer peripheral surface of the pipe p1 and the inner peripheral surface of the circulation pipe L1.
　上記の構成においては、循環装置ｃ２が動作することにより、図２に点線の矢印で示すように、恒温水が恒温槽ｃ１および循環配管Ｌ１内を流通する。この場合、バッファタンクＢＴ１内に貯留される現像液の温度が、バッファタンクＢＴ１の外表面を通る恒温水により設定温度に一致するかまたは近づくように調整される。また、配管ｐ１内に存在する現像液の温度が、配管ｐ１の外周面を通る恒温水により設定温度に一致するかまたは近づくように調整される。 In the above configuration, when the circulation device c2 operates, the constant temperature water circulates in the constant temperature tank c1 and the circulation pipe L1 as shown by the dotted arrow in FIG. In this case, the temperature of the developing solution stored in the buffer tank BT1 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer surface of the buffer tank BT1. Further, the temperature of the developing solution existing in the pipe p1 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer peripheral surface of the pipe p1.
　第２の温度調整部３１０は、第１の温度調整部２６０と同じ構成を有する。具体的には、第２の温度調整部３１０は、恒温槽ｃ１１、循環装置ｃ１２および循環配管Ｌ１１を含む恒温水循環系を備える。恒温槽ｃ１１には、例えば上記の設定温度に保たれた恒温水が貯留される。また、恒温槽ｃ１１には、恒温水の温度を調整する温度調整装置（図示せず）が設けられている。循環配管Ｌ１１の一端および他端は恒温槽ｃ１１に接続されている。循環配管Ｌ１１には、循環装置ｃ１２が設けられている。 The second temperature adjusting unit 310 has the same configuration as the first temperature adjusting unit 260. Specifically, the second temperature adjusting unit 310 includes a constant temperature water circulation system including a constant temperature bath c11, a circulation device c12, and a circulation pipe L11. In the constant temperature bath c11, for example, constant temperature water maintained at the above-mentioned set temperature is stored. Further, the constant temperature bath c11 is provided with a temperature adjusting device (not shown) for adjusting the temperature of the constant temperature water. One end and the other end of the circulation pipe L11 are connected to the constant temperature bath c11. The circulation pipe L11 is provided with a circulation device c12.
　循環配管Ｌ１１の一部分ｌｐ１１は、バッファタンクＢＴ２の外表面の広い範囲に接触するように設けられている。また、循環配管Ｌ１１の他の部分ｌｐ１２は、配管ｐ２の一部を覆うように設けられる。これにより、配管ｐ２を内管とし、循環配管Ｌ１１の他の部分ｌｐ１２を外管とする二重配管が形成される。循環装置ｃ１２が動作することにより、恒温水が恒温槽ｃ１１および循環配管Ｌ１１内を流通する。この場合、バッファタンクＢＴ２内に貯留される現像液の温度が、バッファタンクＢＴ２の外表面を通る恒温水により設定温度に一致するかまたは近づくように調整される。また、配管ｐ２内に存在する現像液の温度が、配管ｐ２の外周面を通る恒温水により設定温度に一致するかまたは近づくように調整される。 A part lp11 of the circulation pipe L11 is provided so as to come into contact with a wide range of the outer surface of the buffer tank BT2. Further, the other portion lp12 of the circulation pipe L11 is provided so as to cover a part of the pipe p2. As a result, a double pipe is formed in which the pipe p2 is an inner pipe and the other portion lp12 of the circulation pipe L11 is an outer pipe. When the circulation device c12 operates, the constant temperature water circulates in the constant temperature tank c11 and the circulation pipe L11. In this case, the temperature of the developing solution stored in the buffer tank BT2 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer surface of the buffer tank BT2. Further, the temperature of the developing solution existing in the pipe p2 is adjusted to match or approach the set temperature by the constant temperature water passing through the outer peripheral surface of the pipe p2.
　ここで、第１の温度調整部２６０において使用される恒温水の温度と、第２の温度調整部３１０において使用される恒温水の温度とは互いに同じであってもよいし、互いに異なってもよい。例えば、現像液供給源１における現像液の温度（以下、現像液初期温度と呼ぶ。）が設定温度よりも高い場合を想定する。この場合、第１の温度調整部２６０において使用される恒温水の温度を設定温度とし、第２の温度調整部３１０において使用される恒温水の温度を現像液初期温度と設定温度との間の中間温度をしてもよい。この場合、現像液の段階的な温度調整をより適切に行うことが可能となる。 Here, the temperature of the constant temperature water used in the first temperature adjusting unit 260 and the temperature of the constant temperature water used in the second temperature adjusting unit 310 may be the same as or different from each other. Good. For example, it is assumed that the temperature of the developer in the developer supply source 1 (hereinafter referred to as the developer initial temperature) is higher than the set temperature. In this case, the temperature of the constant temperature water used in the first temperature adjusting unit 260 is set as the set temperature, and the temperature of the constant temperature water used in the second temperature adjusting unit 310 is set between the initial temperature of the developing solution and the set temperature. Intermediate temperature may be used. In this case, the temperature of the developer can be adjusted stepwise more appropriately.
　段階的に温度調整を行う場合、各温度調整部で調整すべき温度は、例えばバッファタンクＢＴ１，ＢＴ２の容量および複数の配管ｐ１，ｐ２の長さ等に応じて適宜定めることが望ましい。 When the temperature is adjusted step by step, it is desirable that the temperature to be adjusted by each temperature adjusting unit is appropriately determined according to, for example, the capacity of the buffer tanks BT1 and BT2 and the lengths of the plurality of pipes p1 and p2.
　なお、図２の構成において、バッファタンクＢＴ１および配管ｐ１の一部には、現像液の温度を検出する温度センサが設けられてもよい。この場合、第１の温度調整部２６０は、温度センサにより検出される温度に基づいて、配管ｐ１を流れる現像液の温度がより設定温度に近づくように恒温水の温度を変更してもよい。 In the configuration of FIG. 2, a temperature sensor for detecting the temperature of the developing solution may be provided in a part of the buffer tank BT1 and the pipe p1. In this case, the first temperature adjusting unit 260 may change the temperature of the constant temperature water so that the temperature of the developing solution flowing through the pipe p1 approaches the set temperature based on the temperature detected by the temperature sensor.
　また、図２の構成において、バッファタンクＢＴ２および配管ｐ２の一部にも、現像液の温度を検出する温度センサが設けられてもよい。この場合、第２の温度調整部３１０は、温度センサにより検出される温度に基づいて、配管ｐ２を流れる現像液の温度がより設定温度に近づくように恒温水の温度を変更してもよい。 Further, in the configuration of FIG. 2, a temperature sensor for detecting the temperature of the developing solution may be provided in a part of the buffer tank BT2 and the pipe p2. In this case, the second temperature adjusting unit 310 may change the temperature of the constant temperature water so that the temperature of the developer flowing through the pipe p2 approaches the set temperature based on the temperature detected by the temperature sensor.
　［３］基板処理装置１００における複数のバッファタンクＢＴ１のレイアウト
　図３は図１の基板処理装置１００に示される各構成要素のレイアウトの一例を示す模式的平面図であり、図４は図３の基板処理装置１００の模式的側面図である。図３に示すように、基板処理装置１００は露光装置５００とともにクリーンルームＣＬ内に設けられる。現像液供給源１は、クリーンルームＣＬの外部に配置される。 [3] Layout of a plurality of buffer tanks BT1 in the substrate processing apparatus 100 FIG. 3 is a schematic plan view showing an example of the layout of each component shown in the substrate processing apparatus 100 of FIG. 1, and FIG. 4 is a schematic plan view of FIG. It is a schematic side view of the substrate processing apparatus 100. As shown in FIG. 3, the substrate processing apparatus 100 is provided in the clean room CL together with the exposure apparatus 500. The developer supply source 1 is arranged outside the clean room CL.
　本例の装置本体部２００は、４個のブロックＢ１，Ｂ２，Ｂ３，Ｂ４を備える。ブロックＢ１，Ｂ２，Ｂ３，Ｂ４は、この順で一方向に並ぶように設けられている。ブロックＢ４に隣り合うように露光装置５００が設けられている。 The device main body 200 of this example includes four blocks B1, B2, B3, and B4. The blocks B1, B2, B3, and B4 are provided so as to be arranged in one direction in this order. The exposure apparatus 500 is provided adjacent to the block B4.
　ブロックＢ１は搬送部２５０を含む。ブロックＢ１において、搬送部２５０は基板Ｗの搬入搬出部として機能する。ブロックＢ２は、塗布処理部２２０、熱処理部２４０および搬送部２５０を含む。塗布処理部２２０と熱処理部２４０とは搬送部２５０を挟んで対向するように設けられる。ブロックＢ３は、現像処理部２３０、熱処理部２４０、搬送部２５０および第１の温度調整部２６０（図４）を含む。現像処理部２３０および第１の温度調整部２６０と熱処理部２４０とは搬送部２５０を挟んで対向するように設けられる。ブロックＢ４は搬送部２５０を含む。ブロックＢ４において、搬送部２５０はブロックＢ２，Ｂ３と露光装置５００との間で基板の受け渡しを行う受渡部として機能する。 Block B1 includes a transport unit 250. In the block B1, the transport unit 250 functions as a carry-in / carry-out unit for the substrate W. Block B2 includes a coating processing unit 220, a heat treatment unit 240, and a transport unit 250. The coating processing unit 220 and the heat treatment unit 240 are provided so as to face each other with the transport unit 250 interposed therebetween. Block B3 includes a developing unit 230, a heat treatment unit 240, a transport unit 250, and a first temperature adjusting unit 260 (FIG. 4). The developing unit 230, the first temperature adjusting unit 260, and the heat treatment unit 240 are provided so as to face each other with the conveying unit 250 interposed therebetween. Block B4 includes a transport unit 250. In the block B4, the transport unit 250 functions as a transfer unit that transfers the substrate between the blocks B2 and B3 and the exposure apparatus 500.
　図４に示すように、クリーンルームＣＬには、グレーチングにより構成される床部ＦＬが設けられている。それにより、クリーンルームＣＬ内には、上部室と下部室が形成されている。図３および図４の例においては、基板処理装置１００の装置本体部２００は、第１の温度調整部２６０を含み、クリーンルームＣＬ内の床部ＦＬ上に設けられている。すなわち、装置本体部２００は上部室に収容されている。一方、薬液キャビネット３００は、第２の温度調整部３１０を含み、クリーンルームＣＬ内の床部ＦＬの下方に設けられている。すなわち、薬液キャビネット３００は下部室に収容されている。 As shown in FIG. 4, the clean room CL is provided with a floor FL composed of grating. As a result, an upper chamber and a lower chamber are formed in the clean room CL. In the examples of FIGS. 3 and 4, the apparatus main body 200 of the substrate processing apparatus 100 includes the first temperature adjusting unit 260 and is provided on the floor FL in the clean room CL. That is, the device main body 200 is housed in the upper chamber. On the other hand, the chemical liquid cabinet 300 includes the second temperature adjusting unit 310, and is provided below the floor portion FL in the clean room CL. That is, the chemical solution cabinet 300 is housed in the lower chamber.
　ここで、装置本体部２００に設けられる複数のバッファタンクＢＴ１は、ブロックＢ３の上端部に設けられている。クリーンルームＣＬの内部には、図示しない気流発生装置により下降気流が形成されている。そのため、上記のように、複数のバッファタンクＢＴ１が複数の現像ユニットＳＤよりも上方に設けられる場合には、複数のバッファタンクＢＴ１の周辺の温度が、複数の現像ユニットＳＤから発生される熱の影響を受けにくい。それにより、複数のバッファタンクＢＴ１に貯留される現像液が複数の現像ユニットＳＤから発生される熱の影響を受けることが抑制される。 Here, the plurality of buffer tanks BT1 provided in the apparatus main body 200 are provided at the upper end of the block B3. A downdraft is formed inside the clean room CL by an airflow generator (not shown). Therefore, as described above, when the plurality of buffer tanks BT1 are provided above the plurality of developing units SD, the temperature around the plurality of buffer tanks BT1 is the heat generated from the plurality of developing units SD. Less susceptible. As a result, the developer stored in the plurality of buffer tanks BT1 is suppressed from being affected by the heat generated from the plurality of developing units SD.
　図３および図４に示される基板処理装置１００の例では、装置本体部２００と薬液キャビネット３００とは互いに離間するように設けられている。ここで、薬液キャビネット３００から装置本体部２００に現像液を供給する複数の配管ｐ２は、装置本体部２００と薬液キャビネット３００との間に位置する。 In the example of the substrate processing apparatus 100 shown in FIGS. 3 and 4, the apparatus main body 200 and the chemical solution cabinet 300 are provided so as to be separated from each other. Here, the plurality of pipes p2 for supplying the developer from the chemical solution cabinet 300 to the device main body 200 are located between the device main body 200 and the chemical solution cabinet 300.
　この場合、第２の温度調整部３１０は、各配管ｐ２のうち少なくとも装置本体部２００と薬液キャビネット３００との間に位置する部分の内部に存在する現像液の温度を調整することが望ましい。それにより、各配管ｐ２内に存在する現像液が装置本体部２００および薬液キャビネット３００の外部、すなわちクリーンルームＣＬ内の温度の影響を受けることが抑制される。 In this case, it is desirable that the second temperature adjusting unit 310 adjusts the temperature of the developing solution existing inside at least the portion of each pipe p2 located between the apparatus main body 200 and the chemical solution cabinet 300. As a result, it is possible to prevent the developer existing in each pipe p2 from being affected by the temperature outside the apparatus main body 200 and the chemical solution cabinet 300, that is, in the clean room CL.
　［４］効果
　上記の基板処理装置１００においては、現像液供給源１から供給される現像液が、配管ｐ３、バッファタンクＢＴ２および複数の配管ｐ２を通して複数のバッファタンクＢＴ１に貯留される。また、各バッファタンクＢＴ１に貯留された現像液が、配管ｐ１を通して現像ユニットＳＤに供給され、基板Ｗに現像処理が行われる。 [4] Effect In the above-mentioned substrate processing apparatus 100, the developer supplied from the developer supply source 1 is stored in the plurality of buffer tanks BT1 through the pipe p3, the buffer tank BT2, and the plurality of pipes p2. Further, the developing solution stored in each buffer tank BT1 is supplied to the developing unit SD through the pipe p1, and the substrate W is subjected to the developing process.
　ここで、バッファタンクＢＴ１に貯留された現像液および配管ｐ１内に存在する現像液の温度は、第１の温度調整部２６０により設定温度に近づくように調整される。また、バッファタンクＢＴ２に貯留された現像液および配管ｐ２内に存在する現像液の温度は、第２の温度調整部３１０により設定温度に近づくように調整される。 Here, the temperatures of the developer stored in the buffer tank BT1 and the developer existing in the pipe p1 are adjusted by the first temperature adjusting unit 260 so as to approach the set temperature. Further, the temperatures of the developer stored in the buffer tank BT2 and the developer existing in the pipe p2 are adjusted by the second temperature adjusting unit 310 so as to approach the set temperature.
　このように、上記の構成によれば、現像液供給源１から現像ユニットＳＤに至る現像液供給系において、段階的に現像液の温度調整が行われる。それにより、第１および第２の温度調整部２６０，３１０のうちいずれか一方のみが用いられる場合に比べて、現像液の温度調整能力が向上する。また、第１および第２の温度調整部２６０，３１０を個別に制御することにより、段階的な現像液の温度調整をより適切に行うことが可能である。これにより、基板処理装置１００の周囲の温度等に起因して、基板Ｗに供給される現像液の温度が設定温度からずれることを抑制することができる。 As described above, according to the above configuration, the temperature of the developer is adjusted stepwise in the developer supply system from the developer supply source 1 to the developer unit SD. As a result, the temperature adjusting ability of the developing solution is improved as compared with the case where only one of the first and second temperature adjusting units 260 and 310 is used. Further, by individually controlling the first and second temperature adjusting units 260 and 310, it is possible to more appropriately adjust the temperature of the developing solution in stages. As a result, it is possible to prevent the temperature of the developing solution supplied to the substrate W from deviating from the set temperature due to the ambient temperature of the substrate processing apparatus 100 or the like.
　これらの結果、スループットを向上させつつ現像液の温度に起因する現像処理のばらつきの増大を抑制することが可能になる。 As a result, it becomes possible to suppress an increase in variation in the developing process due to the temperature of the developing solution while improving the throughput.
　本発明者は、上記の効果を確認するために、実施例として、図３および図４の基板処理装置１００を用いて第１および第２の温度調整部２６０，３１０による現像液の温度調整を行いつつ２５枚の基板Ｗについて連続的に現像処理を行った。その後、２５枚の全ての基板Ｗについて、現像処理により得られたパターンの線幅を測定した。その結果、処理枚数の増加に伴ってパターンの線幅が変化する（線幅が大きくなる）という傾向は確認されなかった。これは、基板処理のばらつきの増大が抑制されたことを意味する。 In order to confirm the above effect, the present inventor adjusts the temperature of the developing solution by the first and second temperature adjusting units 260 and 310 using the substrate processing apparatus 100 of FIGS. 3 and 4 as an example. While doing so, the development process was continuously performed on the 25 substrates W. Then, the line width of the pattern obtained by the development treatment was measured for all 25 substrates W. As a result, it was not confirmed that the line width of the pattern changed (the line width became larger) as the number of processed sheets increased. This means that the increase in variation in substrate processing was suppressed.
　一方、本発明者は、比較例として、図３および図４の基板処理装置１００を用いて第１の温度調整部２６０のみによる現像液の温度調整を行いつつ２５枚の基板Ｗについて連続的に現像処理を行った。その後、２５枚の全ての基板Ｗについて、現像処理により得られたパターンの線幅を測定した。その結果、処理枚数の増加に伴ってパターンの線幅が変化する（線幅が大きくなる）という傾向が確認された。これは、基板Ｗが連続して処理されることにより、基板処理のばらつきが漸次大きくなることを意味する。パターンの線幅が変化する（線幅が大きくなる）という傾向は、十分に温度調整されていない現像液が基板Ｗに供給されたことに起因すると考えられる。 On the other hand, as a comparative example, the present inventor continuously adjusts the temperature of the developing solution only by the first temperature adjusting unit 260 using the substrate processing apparatus 100 of FIGS. 3 and 4 for 25 substrates W. Development processing was performed. Then, the line width of the pattern obtained by the development treatment was measured for all 25 substrates W. As a result, it was confirmed that the line width of the pattern changes (the line width increases) as the number of processed sheets increases. This means that the variation in the substrate processing gradually increases as the substrate W is continuously processed. The tendency of the line width of the pattern to change (the line width becomes large) is considered to be due to the fact that the developer whose temperature has not been sufficiently adjusted is supplied to the substrate W.
　［５］他の実施の形態
　（１）上記実施の形態においては、現像ユニットＳＤに供給される現像液の温度が第１および第２の温度調整部２６０，３１０により調整されるが、本発明はこれに限定されない。第１および第２の温度調整部２６０，３１０は、現像液以外の処理液の温度を調整してもよい。 [5] Other Embodiments (1) In the above embodiment, the temperature of the developer supplied to the developing unit SD is adjusted by the first and second temperature adjusting units 260 and 310, but the present invention Is not limited to this. The first and second temperature adjusting units 260 and 310 may adjust the temperature of the processing liquid other than the developing solution.
　基板Ｗに供給される処理液として、現像液の他に、現像処理に付随して用いられるリンス液の温度が調整されてもよい。図５は、他の実施の形態に係る基板処理装置１００の構成を示す模式的ブロック図である。図５の基板処理装置１００について、上記実施の形態に係る図１の基板処理装置１００と異なる点を説明する。 As the treatment liquid supplied to the substrate W, the temperature of the rinse liquid used in association with the development treatment may be adjusted in addition to the development liquid. FIG. 5 is a schematic block diagram showing the configuration of the substrate processing apparatus 100 according to another embodiment. The difference between the substrate processing apparatus 100 of FIG. 5 and the substrate processing apparatus 100 of FIG. 1 according to the above embodiment will be described.
　図５の基板処理装置１００においては、各現像ユニットＳＤは、スピンチャック９１および現像ノズル９２に加えて、リンスノズル９９を含む。リンスノズル９９には、基板処理装置１００の外部に設けられるリンス液供給源１２から、複数の配管ｐ３１，ｐ３２，ｐ３３および複数のバッファタンクＢＴ１１，ＢＴ１２を通してリンス液が供給される。リンス液は、例えば純水または界面活性剤である。リンスノズル９９は、現像処理の開始直前に、供給されたリンス液をスピンチャック９１により保持された基板Ｗの上面に吐出する。それにより、現像処理時に基板Ｗの上面上で現像液が拡散しやすくなる。また、リンスノズル９９は、現像処理の停止時に、供給されたリンス液をスピンチャック９１により保持された基板Ｗの上面に吐出する。それにより、現像処理が停止される。 In the substrate processing apparatus 100 of FIG. 5, each developing unit SD includes a rinse nozzle 99 in addition to the spin chuck 91 and the developing nozzle 92. The rinse nozzle 99 is supplied with the rinse liquid from the rinse liquid supply source 12 provided outside the substrate processing device 100 through the plurality of pipes p31, p32, p33 and the plurality of buffer tanks BT11 and BT12. The rinse solution is, for example, pure water or a surfactant. Immediately before the start of the development process, the rinse nozzle 99 discharges the supplied rinse liquid onto the upper surface of the substrate W held by the spin chuck 91. As a result, the developer tends to diffuse on the upper surface of the substrate W during the developing process. Further, the rinse nozzle 99 discharges the supplied rinse liquid onto the upper surface of the substrate W held by the spin chuck 91 when the development process is stopped. As a result, the developing process is stopped.
　ここで、図５の例においては、リンス液供給源１２と薬液キャビネット３００のバッファタンクＢＴ１２との間に、配管ｐ３３が設けられている。配管ｐ３３は、リンス液供給源１２からバッファタンクＢＴ１２にリンス液を流通させる。それにより、リンス液供給源１２から薬液キャビネット３００に流入するリンス液がバッファタンクＢＴ１２に一時的に貯留される。 Here, in the example of FIG. 5, a pipe p33 is provided between the rinse liquid supply source 12 and the buffer tank BT12 of the chemical liquid cabinet 300. The pipe p33 circulates the rinse liquid from the rinse liquid supply source 12 to the buffer tank BT12. As a result, the rinse liquid flowing into the chemical liquid cabinet 300 from the rinse liquid supply source 12 is temporarily stored in the buffer tank BT12.
　また、薬液キャビネット３００のバッファタンクＢＴ１２と装置本体部２００の複数のバッファタンクＢＴ１１との間に、複数の配管ｐ３２が設けられている。複数の配管ｐ３２は、バッファタンクＢＴ１２から複数のバッファタンクＢＴ１１にリンス液をそれぞれ流通させる。それにより、薬液キャビネット３００から装置本体部２００に流入するリンス液が複数のバッファタンクＢＴ１１に一時的に貯留される。 Further, a plurality of pipes p32 are provided between the buffer tank BT12 of the chemical solution cabinet 300 and the plurality of buffer tanks BT11 of the apparatus main body 200. The plurality of pipes p32 circulate the rinse liquid from the buffer tank BT12 to the plurality of buffer tanks BT11. As a result, the rinse liquid flowing from the chemical liquid cabinet 300 into the apparatus main body 200 is temporarily stored in the plurality of buffer tanks BT11.
　複数のバッファタンクＢＴ１１は、現像処理部２３０に設けられる複数の現像ユニットＳＤにそれぞれ対応する。装置本体部２００においては、各バッファタンクＢＴ１１とそのバッファタンクＢＴ１１に対応する現像ユニットＳＤとの間に、配管ｐ３１が設けられている。各配管ｐ３１は、バッファタンクＢＴ１１からリンスノズル９９に現像液を流通させる。 The plurality of buffer tanks BT11 correspond to a plurality of development units SD provided in the development processing unit 230, respectively. In the apparatus main body 200, a pipe p31 is provided between each buffer tank BT11 and the developing unit SD corresponding to the buffer tank BT11. Each pipe p31 circulates the developer from the buffer tank BT11 to the rinse nozzle 99.
　なお、複数のバッファタンクＢＴ１１，ＢＴ１２および複数の配管ｐ３１～ｐ３３のうち少なくとも一部には、複数のリンスノズル９９におけるリンス液の供給状態を制御するための流体関連機器（図示せず）が設けられる。 At least a part of the plurality of buffer tanks BT11 and BT12 and the plurality of pipes p31 to p33 are provided with fluid-related equipment (not shown) for controlling the supply state of the rinse liquid in the plurality of rinse nozzles 99. Be done.
　本例の第１の温度調整部２６０は、図５に点線の矢印で示すように、現像液の温度に加えて、複数のバッファタンクＢＴ１１にそれぞれ貯留されたリンス液の温度を、現像液の設定温度に一致するかまたは近づくように調整する。また、第１の温度調整部２６０は、図５に点線の矢印およびハッチングで示すように、複数の配管ｐ３１を流れるリンス液の温度を、現像液の設定温度に一致するかまたは近づくように調整する。 As shown by the dotted line arrow in FIG. 5, the first temperature adjusting unit 260 of this example sets the temperature of the rinsing solution stored in each of the plurality of buffer tanks BT11 in addition to the temperature of the developing solution. Adjust to match or approach the set temperature. Further, the first temperature adjusting unit 260 adjusts the temperature of the rinse liquid flowing through the plurality of pipes p31 so as to match or approach the set temperature of the developing liquid, as shown by the dotted arrows and hatching in FIG. To do.
　一方、第２の温度調整部３１０は、図５に点線の矢印およびドットパターンで示すように、現像液の温度に加えて、複数の配管ｐ３２を流れるリンス液の温度を、現像液の設定温度に一致するかまたは近づくように調整する。また、第２の温度調整部３１０は、図５に点線の矢印で示すように、バッファタンクＢＴ１２に貯留されたリンス液の温度を、現像液の設定温度に一致するかまたは近づくように調整する。 On the other hand, as shown by the dotted arrows and dot patterns in FIG. 5, the second temperature adjusting unit 310 sets the temperature of the rinsing solution flowing through the plurality of pipes p32 as the set temperature of the developing solution in addition to the temperature of the developing solution. Adjust to match or approach. Further, the second temperature adjusting unit 310 adjusts the temperature of the rinsing solution stored in the buffer tank BT12 so as to match or approach the set temperature of the developing solution, as shown by the dotted arrow in FIG. ..
　上記の構成によれば、現像処理の直前および現像処理の終了時に基板Ｗに供給されるリンス液の温度が現像液の設定温度に一致するかまたはほぼ等しくなる。それにより、現像処理の開始時および終了時における基板Ｗの温度がリンス液の温度によって変化することが抑制される。その結果、現像処理の開始時および終了時における基板Ｗの処理状態が安定化する。 According to the above configuration, the temperature of the rinsing solution supplied to the substrate W immediately before the developing process and at the end of the developing process matches or becomes almost equal to the set temperature of the developing solution. As a result, the temperature of the substrate W at the start and end of the developing process is suppressed from changing depending on the temperature of the rinsing liquid. As a result, the processing state of the substrate W at the start and end of the development process is stabilized.
　基板Ｗに供給される処理液として、上記の例の他、基板Ｗ上にレジスト膜、反射防止膜またはレジストカバー膜等を形成するための塗布液の温度が調整されてもよい。 As the treatment liquid supplied to the substrate W, in addition to the above example, the temperature of the coating liquid for forming a resist film, an antireflection film, a resist cover film, or the like on the substrate W may be adjusted.
　（２）上記実施の形態に係る装置本体部２００においては、複数の現像ユニットＳＤにそれぞれ対応するように複数のバッファタンクＢＴ１が設けられるが、本発明はこれに限定されない。装置本体部２００においては、複数の現像ユニットＳＤに対して共通の一のバッファタンクＢＴ１が設けられてもよい。この場合、一のバッファタンクＢＴ１から複数の現像ユニットＳＤに延びるように複数の配管ｐ１が設けられる。それにより、第１の温度調整部２６０は、バッファタンクＢＴ１および複数の配管ｐ１内に存在する洗浄液の温度を調整する。 (2) In the apparatus main body 200 according to the above embodiment, a plurality of buffer tanks BT1 are provided so as to correspond to the plurality of development units SD, but the present invention is not limited thereto. In the apparatus main body 200, one buffer tank BT1 common to a plurality of developing units SD may be provided. In this case, a plurality of pipes p1 are provided so as to extend from one buffer tank BT1 to the plurality of developing units SD. As a result, the first temperature adjusting unit 260 adjusts the temperature of the cleaning liquid existing in the buffer tank BT1 and the plurality of pipes p1.
　（３）上記実施の形態に係る薬液キャビネット３００においては、複数の現像ユニットＳＤに共通に用いられる一のバッファタンクＢＴ２が設けられるが、本発明はこれに限定されない。薬液キャビネット３００においては、複数の現像ユニットＳＤにそれぞれ対応するように複数のバッファタンクＢＴ２が設けられてもよい。この場合、複数のバッファタンクＢＴ２から複数のバッファタンクＢＴ１にそれぞれ延びるように複数の配管ｐ２が設けられる。それにより、第２の温度調整部３１０は、複数のバッファタンクＢＴ２および複数の配管ｐ２内に存在する洗浄液の温度を調整する。 (3) In the chemical solution cabinet 300 according to the above embodiment, one buffer tank BT2 commonly used for a plurality of developing units SD is provided, but the present invention is not limited to this. In the chemical solution cabinet 300, a plurality of buffer tanks BT2 may be provided so as to correspond to the plurality of developing units SD. In this case, a plurality of pipes p2 are provided so as to extend from the plurality of buffer tanks BT2 to the plurality of buffer tanks BT1. As a result, the second temperature adjusting unit 310 adjusts the temperature of the cleaning liquid existing in the plurality of buffer tanks BT2 and the plurality of pipes p2.
　（４）上記実施の形態に係る基板処理装置１００においては、装置本体部２００と薬液キャビネット３００とが別体として配置されるが、本発明はこれに限定されない。薬液キャビネット３００またはその内部構成は、装置本体部２００内に設けられてもよい。 (4) In the substrate processing apparatus 100 according to the above embodiment, the apparatus main body 200 and the chemical solution cabinet 300 are arranged as separate bodies, but the present invention is not limited thereto. The chemical solution cabinet 300 or its internal configuration may be provided in the apparatus main body 200.
　（５）図４の例では、薬液キャビネット３００は装置本体部２００の下方に設けられるが、本発明はこれに限定されない。薬液キャビネット３００は装置本体部２００と同じ床部ＦＬ上に設けられてもよい。 (5) In the example of FIG. 4, the chemical solution cabinet 300 is provided below the device main body 200, but the present invention is not limited thereto. The chemical solution cabinet 300 may be provided on the same floor FL as the device main body 200.
　［６］請求項の各構成要素と実施の形態の各要素との対応関係
　以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明する。上記実施の形態では、現像ユニットＳＤが処理部の例であり、現像液供給源１、リンス液供給源１２、配管ｐ１～ｐ３，ｐ３１～ｐ３３、バッファタンクＢＴ１，ＢＴ２，ＢＴ１１，ＢＴ１２が処理液供給系の例であり、第１の温度調整部２６０および第２の温度調整部３１０が調整部の例である。 [6] Correspondence relationship between each component of the claim and each element of the embodiment The example of correspondence between each component of the claim and each element of the embodiment will be described below. In the above embodiment, the developing unit SD is an example of the processing unit, and the developing solution supply source 1, the rinsing solution supply source 12, the pipes p1 to p3, p31 to p33, and the buffer tanks BT1, BT2, BT11, and BT12 are the processing liquids. It is an example of a supply system, and the first temperature adjusting unit 260 and the second temperature adjusting unit 310 are examples of the adjusting unit.
　また、複数のバッファタンクＢＴ１，ＢＴ１１が第１の貯留部の例であり、複数の配管ｐ１，ｐ３１が第１の処理液流路の例であり、配管ｐ２，ｐ３２が第２の処理液流路の例であり、第１の温度調整部２６０が第１の温度調整装置の例であり、第２の温度調整部３１０が第２の温度調整装置の例であり、基板処理装置１００が基板処理装置の例である。 Further, the plurality of buffer tanks BT1 and BT11 are examples of the first storage portion, the plurality of pipes p1 and p31 are examples of the first treatment liquid flow path, and the pipes p2 and p32 are examples of the second treatment liquid flow. An example of a road, a first temperature adjusting unit 260 is an example of a first temperature adjusting device, a second temperature adjusting unit 310 is an example of a second temperature adjusting device, and a substrate processing device 100 is a substrate. This is an example of a processing device.
　また、バッファタンクＢＴ２，ＢＴ１２が第２の貯留部の例であり、装置本体部２００が主本体部の例であり、薬液キャビネット３００が副本体部の例であり、クリーンルームＣＬの上部室が第１の収容室の例であり、クリーンルームＣＬの下部室が第２の収容室の例であり、現像ユニットＳＤが現像装置の例である。 Further, the buffer tanks BT2 and BT12 are examples of the second storage unit, the apparatus main body 200 is an example of the main body, the chemical cabinet 300 is an example of the sub-main body, and the upper chamber of the clean room CL is the second. No. 1 is an example of the accommodation chamber, the lower chamber of the clean room CL is an example of the second accommodation chamber, and the developing unit SD is an example of the developing apparatus.
　請求項の各構成要素として、請求項に記載されている構成または機能を有する他の種々の要素を用いることもできる。 As each component of the claim, various other elements having the structure or function described in the claim can also be used.

Claims (8)

  1. 処理液を用いて基板に所定の処理を行う処理部と、
    　前記処理部に処理液を供給する処理液供給系と、
    　前記処理液供給系において処理液の温度を調整する調整部とを備え、
    　前記処理液供給系は、
    　処理液を貯留する第１の貯留部と、
    　前記第１の貯留部から前記処理部に至る第１の処理液流路と、
    　処理液供給源から供給される処理液を前記第１の貯留部に供給する第２の処理液流路とを含み、
    　前記調整部は、
    　前記所定の処理を行うために設定された設定温度に一致するかまたは近づくように、前記第１の貯留部に貯留された処理液の温度を調整する第１の温度調整装置と、
    　前記設定温度に一致するかまたは近づくように、前記第２の処理液流路のうち少なくとも一部を流れる処理液の温度を調整する第２の温度調整装置とを含む、基板処理装置。     A processing unit that performs a predetermined treatment on the substrate using the treatment liquid,
    A treatment liquid supply system that supplies the treatment liquid to the treatment unit,
    The treatment liquid supply system is provided with an adjusting unit for adjusting the temperature of the treatment liquid.
    The treatment liquid supply system is
    The first storage unit that stores the treatment liquid and
    A first processing liquid flow path from the first storage unit to the processing unit,
    A second treatment liquid flow path for supplying the treatment liquid supplied from the treatment liquid supply source to the first storage unit is included.
    The adjusting part
    A first temperature adjusting device that adjusts the temperature of the processing liquid stored in the first storage unit so as to match or approach the set temperature set for performing the predetermined processing.
    A substrate processing apparatus including a second temperature adjusting device for adjusting the temperature of a processing liquid flowing through at least a part of the second processing liquid flow path so as to match or approach the set temperature.
  2. 前記第１の温度調整装置は、前記設定温度に一致するかまたは近づくように、前記第１の処理液流路のうち少なくとも一部を流れる処理液の温度をさらに調整する、請求項１記載の基板処理装置。 The first temperature adjusting device according to claim 1, further adjusting the temperature of the processing liquid flowing through at least a part of the first processing liquid flow path so as to match or approach the set temperature. Substrate processing equipment.
  3. 前記処理液供給源から供給される処理液を貯留する第２の貯留部をさらに備え、
    　前記第２の処理液流路は、前記第２の貯留部と前記第１の貯留部とをつなぐように設けられ、
    　前記第２の温度調整装置は、前記設定温度に一致するかまたは近づくように、前記第２の貯留部に貯留された処理液の温度をさらに調整する、請求項１または２記載の基板処理装置。     A second storage unit for storing the treatment liquid supplied from the treatment liquid supply source is further provided.
    The second treatment liquid flow path is provided so as to connect the second storage portion and the first storage portion.
    The substrate processing apparatus according to claim 1 or 2, wherein the second temperature adjusting device further adjusts the temperature of the processing liquid stored in the second storage portion so as to match or approach the set temperature. ..
  4. 前記処理部および前記第１の貯留部を含む主本体部と、
    　前記主本体部とは別体として配置され、前記第２の貯留部を含む副本体部とを備える、請求項３記載の基板処理装置。     A main body including the processing unit and the first storage unit,
    The substrate processing apparatus according to claim 3, further comprising a sub-main body portion that is arranged as a separate body from the main main body portion and includes the second storage portion.
  5. 前記主本体部と前記副本体部とは互いに離間するように設けられ、
    　前記第２の処理液流路の少なくとも一部は、前記主本体部と前記副本体部との間の部分を含む、請求項４記載の基板処理装置。     The main body portion and the sub-main body portion are provided so as to be separated from each other.
    The substrate processing apparatus according to claim 4, wherein at least a part of the second processing liquid flow path includes a portion between the main body portion and the sub-main body portion.
  6. 前記主本体部は、下降気流が形成された空間内に設けられ、
    　前記第１の貯留部は、前記処理部よりも上方に設けられる、請求項４または５記載の基板処理装置。     The main body is provided in a space where a downdraft is formed.
    The substrate processing apparatus according to claim 4 or 5, wherein the first storage unit is provided above the processing unit.
  7. 前記主本体部を収容する第１の収容室と、
    　前記副本体部を収容する第２の収容室とをさらに備える、請求項４～６のいずれか一項に記載の基板処理装置。     A first storage chamber for accommodating the main body and
    The substrate processing apparatus according to any one of claims 4 to 6, further comprising a second accommodating chamber for accommodating the sub-main body portion.
  8. 前記所定の処理は現像処理を含み、
    　前記処理部は、前記処理液として現像液を基板に供給する現像装置を含む、請求項１～７のいずれか一項に記載の基板処理装置。     The predetermined process includes a developing process.
    The substrate processing apparatus according to any one of claims 1 to 7, wherein the processing unit includes a developing apparatus that supplies a developing solution as the processing liquid to the substrate.
PCT/JP2020/002566 2019-03-20 2020-01-24 Substrate processing apparatus WO2020189011A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019053366A JP7198698B2 (en) 2019-03-20 2019-03-20 Substrate processing equipment
JP2019-053366 2019-03-20

Publications (1)

Publication Number Publication Date
WO2020189011A1 true WO2020189011A1 (en) 2020-09-24

Family

ID=72519293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/002566 WO2020189011A1 (en) 2019-03-20 2020-01-24 Substrate processing apparatus

Country Status (3)

Country Link
JP (1) JP7198698B2 (en)
TW (1) TWI770462B (en)
WO (1) WO2020189011A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574698A (en) * 1991-09-18 1993-03-26 Hitachi Ltd Resist applicator
JP2000182926A (en) * 1998-12-14 2000-06-30 Dainippon Screen Mfg Co Ltd Substrate processing device
JP2002159905A (en) * 2000-11-27 2002-06-04 Mitsumi Electric Co Ltd Coating applicator and coating method
JP2017028299A (en) * 2013-09-27 2017-02-02 東京エレクトロン株式会社 Treatment liquid supply passage pretreatment method and treatment liquid supply apparatus
JP2018182271A (en) * 2017-04-21 2018-11-15 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
JP2019061988A (en) * 2017-09-22 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス Chemical solution production method, chemical solution production device, and substrate processing device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335231A (en) * 1997-06-05 1998-12-18 Sony Corp Liquid processing device
JP6666164B2 (en) * 2016-02-17 2020-03-13 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
JP6685791B2 (en) * 2016-03-25 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574698A (en) * 1991-09-18 1993-03-26 Hitachi Ltd Resist applicator
JP2000182926A (en) * 1998-12-14 2000-06-30 Dainippon Screen Mfg Co Ltd Substrate processing device
JP2002159905A (en) * 2000-11-27 2002-06-04 Mitsumi Electric Co Ltd Coating applicator and coating method
JP2017028299A (en) * 2013-09-27 2017-02-02 東京エレクトロン株式会社 Treatment liquid supply passage pretreatment method and treatment liquid supply apparatus
JP2018182271A (en) * 2017-04-21 2018-11-15 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
JP2019061988A (en) * 2017-09-22 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス Chemical solution production method, chemical solution production device, and substrate processing device

Also Published As

Publication number Publication date
JP2020155618A (en) 2020-09-24
JP7198698B2 (en) 2023-01-04
TWI770462B (en) 2022-07-11
TW202040638A (en) 2020-11-01

Similar Documents

Publication Publication Date Title
JP3074366B2 (en) Processing equipment
JP6370233B2 (en) Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program
KR101299763B1 (en) Substrate cooling device and substrate cooling method
JP2001023952A (en) Etching method and device
JP6707412B2 (en) Substrate liquid processing apparatus, substrate liquid processing method and storage medium
JP6789751B2 (en) Substrate liquid treatment equipment, substrate liquid treatment method and storage medium
JP6732546B2 (en) Substrate liquid processing apparatus, substrate liquid processing method and storage medium
KR100274859B1 (en) Thermal processing method and apparatus
JP6723110B2 (en) Substrate processing apparatus and substrate processing method
US11079691B2 (en) Coating and developing apparatus and coating and developing method
JP4537323B2 (en) Substrate cooling device
JP6441198B2 (en) Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program
WO2020189011A1 (en) Substrate processing apparatus
JP2011023530A (en) Substrate processing apparatus
JP2009094511A (en) Method for treating process solution and apparatus for treating substrate using it
JP6762214B2 (en) Substrate liquid treatment equipment and substrate liquid treatment method
JP2009260257A (en) Substrate treating apparatus and substrate treating method
JP6632684B2 (en) Substrate liquid processing apparatus, substrate liquid processing method, and computer-readable storage medium storing substrate liquid processing program
JP3625120B2 (en) Substrate processing equipment
JP3623654B2 (en) Substrate processing equipment
JP2007173364A (en) Substrate treatment apparatus
JP2021064748A (en) Substrate processing device and device cleaning method
JP2018148245A (en) Device and method for controlling etching process with phosphoric acid aqueous solution, and computer-readable storage medium that stores program for etching substrate with phosphoric acid aqueous solution
JP2000005589A (en) Treating fluid feeding device
JP2018157235A (en) Substrate liquid processing device, substrate liquid processing method and computer readable storage medium with substrate liquid processing program stored thereon

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20774809

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20774809

Country of ref document: EP

Kind code of ref document: A1