WO2018176589A1 - 一种tft背板的制作方法及tft背板 - Google Patents

一种tft背板的制作方法及tft背板 Download PDF

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Publication number
WO2018176589A1
WO2018176589A1 PCT/CN2017/084135 CN2017084135W WO2018176589A1 WO 2018176589 A1 WO2018176589 A1 WO 2018176589A1 CN 2017084135 W CN2017084135 W CN 2017084135W WO 2018176589 A1 WO2018176589 A1 WO 2018176589A1
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Prior art keywords
active region
layer
nitride
gate
gates
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PCT/CN2017/084135
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English (en)
French (fr)
Inventor
周星宇
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深圳市华星光电技术有限公司
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Priority to EP17903720.5A priority Critical patent/EP3605613A4/en
Priority to JP2019548018A priority patent/JP6901070B2/ja
Priority to KR1020197031506A priority patent/KR102338735B1/ko
Priority to US15/532,493 priority patent/US10347666B2/en
Publication of WO2018176589A1 publication Critical patent/WO2018176589A1/zh

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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the field of display technologies, and in particular, to a method for fabricating a TFT backplane and a TFT backplane.
  • OLED Organic Light-Emitting Diode
  • Organic electroluminescent display also known as organic electroluminescent display
  • OLEDs can be classified into passive matrix OLEDs and active matrix OLEDs according to the driving method (Active). Matrix OLED, AMOLED) two categories.
  • TFT Thin film transistor Transistor
  • AMOLED display devices which is directly related to the development direction of high-performance flat panel display devices.
  • the existing TFT backplane has various structures, and the material of the active layer of the thin film transistor for preparing the corresponding structure is also various. For example, in the same TFT backplane, high electron mobility and uniformity of current output can be simultaneously adopted.
  • the polysilicon material and the non-polysilicon material having a fast switching speed and a low leakage current respectively form a TFT for driving and a TFT for switching, and the TFT backplane can select different TFTs according to different functional requirements.
  • the gate insulating layer of the TFT is made of an oxide + nitride structure.
  • the nitride may diffuse, which may contaminate the non-polysilicon material of the switching TFT, thereby affecting the performance of the non-polysilicon switching TFT and reducing the performance of the entire TFT backplane.
  • the technical problem to be solved by the present application is to provide a TFT backplane manufacturing method and a TFT backplane to reduce the influence of the nitride layer of the driving TFT on the performance of the switching TFT, thereby improving the performance of the TFT backplane.
  • one technical solution adopted in the present application is to provide a method for fabricating a TFT backplane.
  • the method includes: preparing a substrate; forming a first active region on the substrate; wherein the first active region is made of polysilicon; on the first active region and not covered by the first active region An oxide layer and a nitride layer are sequentially deposited on the substrate as a first insulating layer; and a first gate and a second gate which are independent of each other are formed on the nitride layer, and the first gate is located at the Above the first active region; the first and second gates are self-aligned, and the nitride layer not covered by the first and second gates is removed by dry etching.
  • the method includes: preparing a substrate; forming a first active region on the substrate; wherein the first active region is made of polysilicon; on the first active region and not covered by the first active region An oxide layer and a nitride layer are sequentially deposited on the substrate as a first insulating layer; and a first gate and a second gate which are independent of each other are formed on the nitride layer, and the first gate is located at the Above the first active region; removing the nitride layer not covered by the first and second gates; and the first and second gates and the first layer not covered by the nitride layer Depositing a second insulating layer on the oxide layer; forming a second active region on the second insulating layer above the second gate; wherein the second active region and the material of the first active region The first source, the first drain, the second source, and the second drain are respectively prepared for the
  • the TFT backplane includes: a substrate; a first active region disposed on the substrate; wherein the first active region is made of polysilicon; and the first insulating layer is disposed on the first active region and is not The first active region covers the substrate; wherein the first insulating layer comprises an oxide layer and a nitride layer deposited in sequence; and the nitride layer comprises a first nitride layer and a plurality of mutually independent layers a first nitride layer; the first and second gates are respectively disposed on the first and second nitride layers; the nitride layer is only present in the first and second gates and the oxide a second insulating layer disposed on the first and second gate electrodes and the oxide layer not covered by the nitride layer; and a second active region disposed on the second gate On the upper second insulating layer; wherein the second active region is different
  • the embodiment of the present application forms a first active region on the substrate, the first active region is made of polysilicon material; the first oxide layer and the nitride layer are sequentially deposited as the first An insulating layer; removing the nitride layer not covered by the first and second gates on the oxide layer, and then forming a second active region on the second insulating layer above the second gate.
  • the embodiment of the present application can significantly reduce the contamination of the second active region of the switching TFT by the nitride layer of the driving TFT, thereby reducing the switch.
  • the effect of TFT performance thereby improving the performance of the TFT backplane.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for fabricating a TFT backplane according to the present application
  • FIG. 2A is a schematic structural view of a substrate in the embodiment of FIG. 1;
  • FIG. 2B is a schematic structural view of a TFT backplane after forming a first active region in the embodiment of FIG. 1;
  • FIG. 2C is a schematic structural view of a TFT backplane after forming a first insulating layer in the embodiment of FIG. 1;
  • 2D is a schematic structural view of the TFT backplane after forming the first and second gates in the embodiment of FIG. 1;
  • FIG. 2E is a schematic structural view of a TFT backplane after removing a nitride layer not covered by the first and second gates in the embodiment of FIG. 1;
  • FIG. 2F is a schematic structural view of a TFT backplane after forming a second insulating layer in the embodiment of FIG. 1;
  • 2G is a schematic structural view of a TFT backplane after forming a second active region in the embodiment of FIG. 1;
  • 2H is a schematic structural view of a TFT backplane formed with first and second source electrodes and first and second drain electrodes in the embodiment of FIG. 1;
  • FIG. 3 is a schematic structural view of another embodiment of a TFT backplane in a TFT backplane manufacturing process of the present application;
  • FIG. 4 is a schematic structural view of still another embodiment of a TFT backplane in a TFT backplane manufacturing process of the present application;
  • FIG. 5 is a schematic structural view of an embodiment of a TFT backplane of the present application.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for fabricating a TFT backplane according to the present application
  • FIG. 2A to FIG. 2H are diagrams showing a TFT backplane in the process of fabricating a TFT backplane of the embodiment of FIG. Schematic.
  • the first active region 202, the first gate 205, the first source 209, and the first drain 230 correspond to the driving TFT
  • the second active region 208, the second The gate 206, the second source 231, and the second drain 232 correspond to the switching TFT.
  • This embodiment includes the following specific steps:
  • Step 101 Prepare the substrate 201 (see FIG. 2A).
  • the substrate 201 needs to be cleaned and pre-baked.
  • the purpose of the cleaning is to remove the dirty spots, oil stains and fibers on the substrate 201 to achieve the best effect of the glue coating; The uniformity of the glue is better.
  • the substrate 201 of the present embodiment may be, but not limited to, transparent glass, transparent resin, or the like.
  • Step 102 Form a first active region 202 on the substrate 201 (see FIG. 2B); wherein the first active region 202 is made of polysilicon.
  • the first active region 202 of this embodiment includes a source region, a drain region, and a conductive channel (not shown).
  • the present embodiment employs first deposition of amorphous silicon, followed by heating, rapid annealing, or laser crystallization of the amorphous silicon, and finally forming a first active region 202 by yellow etching.
  • Step 103 sequentially depositing an oxide layer 203 and a nitride layer 204 on the first active region 202 and the substrate 201 not covered by the first active region 202 as a first insulating layer (see FIG. 2C).
  • the nitride of the present embodiment is silicon nitride; of course, in other embodiments, other nitrides such as boron nitride may be used instead of silicon nitride.
  • Step 104 Form a first gate 205 and a second gate 206 independent of each other on the nitride layer 204, and the first gate 205 is located above the first active region 202 (refer to FIG. 2D).
  • the first gate 205 and the second gate 206 of the embodiment are made of a metal material and are formed by yellow etching.
  • the metal may be copper, aluminum, molybdenum or the like.
  • the first gate 205 and the second gate 206 may be other metal materials or other non-metal materials.
  • the embodiment of the present application does not limit whether the materials of the first gate 205 and the second gate 206 are the same.
  • Step 105 removing the nitride layer 204 covered by the first gate 205 and the second gate 206 (see FIG. 2E).
  • the first gate 205 and the second gate 206 are self-aligned (ie, a self-aligned process), and the first gate 205 and the second gate 206 are removed by dry etching. Covered nitride layer 204.
  • a self-aligned process such as an aluminum gate or a wet etching method may be used instead of the dry etching method.
  • the self-aligned process allows the gate and source and drain coverage to be diffused laterally by the impurity, which is much smaller than the overlay capacitance of the aluminum gate process.
  • the one-step ion implantation process can be added to fill the unconnected portion beside the gate region, thereby achieving self-alignment, thereby reducing parasitic capacitance and improving the switching speed of the TFT. And the operating frequency, while improving the integration of the circuit.
  • This step is mainly to reduce the diffusion of the nitride layer 204 not covered by the first gate 205 and the second gate 206 in the subsequent high temperature fabrication of the TFT backplane and the second active region 208 of the non-polysilicon of the switching TFT (subsequent Introduction) pollution.
  • the diffusion of the nitride layer 204 covered by the first gate 205 and the second gate 206 is blocked by the first gate 205 and the second gate 206, and substantially does not pollute the second active region 208.
  • Step 106 depositing a second insulating layer 207 on the first gate 205 and the second gate 206 and the oxide layer 203 not covered by the nitride layer 204 (see FIG. 2F).
  • the second insulating layer 207 is silicon dioxide.
  • Step 107 Form a second active region 208 on the second insulating layer 207 above the second gate 206 (see FIG. 2G); wherein the second active region 208 is different in material from the first active region 202.
  • the second active region 208 of the embodiment is made of an oxide material to increase the switching speed of the switching TFT and reduce the leakage current thereof.
  • the oxide may be, but not limited to, indium gallium zinc oxide, indium tin zinc oxide, or the like.
  • the second active region 208 can be a non-oxide.
  • Step 108 Prepare a first source 209, a first drain 230, a second source 231, and a second drain 232 for the first active region 202 and the second active region 208, respectively (see FIG. 2H).
  • the method for preparing the first source 209, the first drain 230, the second source 231, and the second drain 232 of the embodiment includes: above the first active region 202, the second insulating layer 207 Digging holes and forming first and second electrode holes; wherein the first and second electrode holes are all penetrated through the entire second insulating layer 207; depositing a metal layer and etching the same to the second insulating layer 207 a first source 209 and a first drain 230 are formed in the first and second electrode holes, and the first source 209 and the first drain 230 respectively pass through the first and second electrode holes and the first active
  • the contact between the two ends of the region 202 can be understood as being respectively in contact with the source region and the drain region at the two ends of the first active region 202.
  • the second source electrode 231 and the second drain electrode 232 can be respectively formed on both ends of the second active region 208. .
  • the unremoved nitride layer of the embodiment exists only between the oxide layer and the first and second gates, and the unremoved nitride is in a subsequent high-temperature process of the TFT substrate.
  • the diffusion of the first and second gates is blocked by the first and second gates. Therefore, the embodiment of the present application can significantly reduce the contamination of the second active region of the switching TFT by the nitride layer of the driving TFT, thereby reducing the influence on the performance of the switching TFT. , thereby improving the performance of the TFT backplane.
  • FIG. 3 is a schematic structural diagram of another embodiment of a TFT backplane in the TFT backplane manufacturing process of the present application.
  • a buffer layer 303 is formed on the substrate 301, that is, a buffer is provided between the substrate 301 and the first active region 302 and the first insulating layer 304.
  • the layer 303 is used to improve the problem of leakage and the like when the first active region 302 is prepared, thereby further improving the performance of the TFT substrate.
  • the buffer layer 303 includes a silicon nitride layer and a silicon oxide layer; of course, in other application scenarios, the buffer layer 303 may also include only a silicon nitride layer or a silicon oxide layer.
  • FIG. 4 is a schematic structural diagram of still another embodiment of the TFT backplane in the TFT backplane manufacturing process of the present application.
  • This embodiment may adopt the following method instead of the step 108 of the embodiment of FIG. 1.
  • the second active region 403 is formed on the second insulating layer 402 above the second gate 401: depositing on the second active region 403 and the second insulating layer 402 not covered by the second active region 403
  • the etch stop layer 404 correspondingly, the method of forming the first source 405, the first drain 406, the second source 407, and the second drain 408 includes: over the first active region 410, the etch stop layer 404 and
  • the second insulating layer 402 is scribed, and the first and second electrode holes are formed.
  • the first and second electrode holes are respectively penetrated through the entire etch barrier layer 404 and the second insulating layer 402, and a metal layer is deposited and Etching, to form a first source 405 and a first drain 406 on the etch barrier layer 404, the second insulating layer 402, and the first and second electrode holes, and the first source 407 and the first
  • the drain 408 is in contact with both ends of the first active region 409 through the first and second electrode holes, respectively.
  • the etch barrier layer 404 is etched over the both ends of the second active region 403, and the third and fourth electrode holes are formed, and the portion of the etch barrier layer 404 located on the second active region 403 is deposited.
  • the layer is etched to form a second source 407 and a second drain 408 on the etch stop layer 404 and the third and fourth electrode holes, and the second source 407 and the second drain 408 is in contact with both ends of the second active region 403 through the third and fourth electrode holes, respectively.
  • the fabrication process of the TFT substrate of the embodiment further includes some necessary steps, such as a passivation layer, a planarization layer, a conductive layer, a pixel definition layer, and a preparation of a pixel electrode, because these steps are not the invention of the present application. No detailed description will be given.
  • FIG. 5 is a schematic structural diagram of an embodiment of a TFT backplane of the present application.
  • the embodiment includes a substrate 501, a first active region 502 disposed on the substrate 501, wherein the first active region 502 is made of polysilicon; and the substrate is disposed on the first active region 502 and not covered by the first active region 502.
  • a first insulating layer 503 on 501 wherein the first insulating layer 503 includes an oxide layer 504 and a nitride layer which are sequentially deposited; and the nitride layer includes a first nitride layer 505 and a second nitride layer which are independent of each other 506; a first gate 507 and a second gate 508 respectively disposed on the first nitride layer 505 and the second nitride layer 506; the nitride layer is only present in the first gate 507 and the second gate 508 Between the first and second oxide layers 504; a second active region 510 disposed on the second insulating layer 509 above the second gate 508; wherein the second active region 510 is different from the material of the first active region 502; respectively connected to the first ends of the first active region 502 a source 511 and a first drain 512; respectively connected to the second source 5 of the two ends of the second active region 510 13.
  • a second drain 514 wherein
  • the nitride layer of the driving TFT of the embodiment exists only between the oxide layer and the first and second gates, and the diffusion of the unremoved nitride in the subsequent high-temperature process of the TFT substrate The first and second gates are blocked. Therefore, the embodiment of the present application can significantly reduce the contamination of the second active region of the switching TFT by the nitride layer of the driving TFT, thereby reducing the influence on the performance of the switching TFT. Improve the performance of the TFT backplane.
  • the second active region 510 of the embodiment is made of an oxide material to increase the switching speed of the switching TFT and reduce the leakage current thereof.
  • the oxide may be, but not limited to, indium gallium zinc oxide, indium tin zinc oxide, or the like.
  • the second active region 208 can be a non-oxide.
  • the first gate 507 and the second gate 508 are self-aligned (and self-aligned process), and the first gate 507 and the second gate 508 are removed by dry etching. Covered nitride layers 505 and 506.
  • a self-aligned process such as an aluminum gate or a wet etching method may be used instead of the dry etching method.
  • the nitride of the embodiment is silicon nitride; of course, in other embodiments, other nitrides such as boron nitride may be used instead of silicon nitride.
  • the embodiment further includes: a buffer layer 515 disposed on the 501 substrate and the first active region 502 to improve leakage and the like when the first active region 502 is prepared, thereby further improving the performance of the TFT substrate.
  • the buffer layer 515 includes a silicon nitride layer and a silicon oxide layer; of course, in other application scenarios, the buffer layer 515 may also include only a silicon nitride layer or a silicon oxide layer; or other materials may be used instead of nitriding. Silicon and/or silicon oxide.
  • the embodiment further includes an etch stop layer 516 disposed on the second insulating layer 509 to provide support for non-back channel etching of the second source 513 and the second drain 514.
  • the TF substrate of the embodiment further includes some necessary steps, such as a passivation layer, a flat layer, a conductive layer, a pixel defining layer, and a pixel electrode, etc., because these steps are not the invention of the present application, and details are not given here. Narrative.
  • first source, the first drain, the second source, and the second drain of the embodiment of the present application may be metals such as copper, aluminum, and molybdenum. Of course, other metal materials or other non-metal materials may be used instead of these metals.
  • the embodiments of the present application do not limit whether the materials of the first source, the first drain, the second source, the second drain, the first gate, and the second gate are the same.

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Abstract

一种TFT背板的制作方法及TFT背板。该方法包括：准备基板（101）；在基板上依次形成第一活性区、第一氧化物层、氮化物层、及相互独立的第一、第二栅极（102，103，104）；去除第一、第二栅极覆盖不到的氮化物层（105）；沉积第二绝缘层（106）；在第二栅极上方的第二绝缘层上形成与第一活性区的材质不同的第二活性区（107）；分别形成第一、第二源电极、第一、第二漏电极（108）。该方法能够提高该TFT背板的性能。

Description

一种TFT背板的制作方法及TFT背板
【技术领域】
本申请涉及显示技术领域，特别是涉及一种TFT背板的制作方法及TFT背板。
【背景技术】
OLED(Organic Light-Emitting Diode，有机发光二极管)显示器，也称为有机电致发光显示器，它是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、 体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。OLED按照驱动方式可以分为无源矩阵型OLED和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类。
薄膜晶体管(Thin Film Transistor，简称TFT)是AMOLED显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。现有的TFT背板具有多种结构，制备相应结构的薄膜晶体管的有源层的材料也具有多种，例如，在同一TFT背板中可同时采用具有电子迁移率高、电流输出均一性好的多晶硅材料及具有开关速度快和漏电流低的非多晶硅材料分别制作用于驱动的TFT及用于开关的TFT，该TFT背板可根据不同功能需求选择使用不同的TFT。
但本申请的发明人在长期的研发中发现，在目前现有技术中，为提高驱动TFT的可靠性及电性性能，会将该TFT的栅极绝缘层采用氧化物+氮化物的结构，但是在该氮化物沉积以后的该TFT的高温制程中，该氮化物会扩散，会污染开关TFT的非多晶硅材质，从而影响非多晶硅材质的开关TFT的性能，降低整个TFT背板的性能。
【发明内容】
本申请主要解决的技术问题是提供一种TFT背板的制作方法及TFT背板，以减少驱动TFT的氮化物层对开关TFT性能的影响，从而提升该TFT背板的性能。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种TFT背板的制作方法。所述方法包括：准备基板；在所述基板上形成第一活性区；其中，所述第一活性区为多晶硅材质；在所述第一活性区上及未被所述第一活性区覆盖的所述基板上依次沉积氧化物层及氮化物层作为第一绝缘层；在所述氮化物层上分别形成相互独立的第一栅极及第二栅极，且所述第一栅极位于所述第一活性区上方；以所述第一、第二栅极为自对准，利用干蚀法去除所述未被所述第一、第二栅极覆盖的氮化物层。在所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上沉积第二绝缘层；在所述第二栅极上方的所述第二绝缘层上形成氧化物第二活性区；其中，所述第二活性区与所述第一活性区的材质不同；为所述第一活性区及所述第二活性区分别制备第一源极、第一漏极及第二源极、第二漏极。
为解决上述技术问题，本申请采用的另一技术方案是：提供一种TFT背板的制作方法。所述方法包括：准备基板；在所述基板上形成第一活性区；其中，所述第一活性区为多晶硅材质；在所述第一活性区上及未被所述第一活性区覆盖的所述基板上依次沉积氧化物层及氮化物层作为第一绝缘层；在所述氮化物层上分别形成相互独立的第一栅极及第二栅极，且所述第一栅极位于所述第一活性区上方；去除所述第一、第二栅极覆盖不到的所述氮化物层；在所述第一、第二栅极及未被所述氮化物层覆盖的所述第一氧化物层上沉积第二绝缘层；在所述第二栅极上方的所述第二绝缘层上形成第二活性区；其中，所述第二活性区与所述第一活性区的材质不同；为所述第一活性区及所述第二活性区分别制备第一源极、第一漏极及第二源极、第二漏极。
为解决上述技术问题，本申请采用的又一个技术方案是：提供一种TFT背板。所述TFT背板包括：基板；第一活性区，设置于所述基板上；其中，所述第一活性区为多晶硅材质；第一绝缘层，设置于所述第一活性区上及未被所述第一活性区覆盖的所述基板上；其中，所述第一绝缘层包括依次沉积的氧化物层及氮化物层；且所述氮化物层包括相互独立的第一氮化物层及第二氮化物层；第一、第二栅极，分别设置于所述第一、第二氮化物层上；所述氮化物层只存在于所述第一、第二栅极与所述氧化物层之间；第二绝缘层，设置于所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上；第二活性区，设置于所述第二栅极上方的所述第二绝缘层上；其中，所述第二活性区与所述第一活性区的材质不同；第一源电极、第一漏电极，分别接触所述第一活性区的两端；第二源电极、第二漏电极，分别接触所述第二活性区的两端。
本申请实施例的有益效果是：区别于现有技术，本申请实施例在基板上形成第一活性区，该第一活性区为多晶硅材质；依次沉积第一氧化物层及氮化物层作为第一绝缘层；去除氧化物层上的第一、第二栅极覆盖不到的氮化物层，然后在第二栅极上方的第二绝缘层上形成第二活性区。可知，未被去除的氮化物层只存在于氧化物层与第一、第二栅极之间，且该未被去除的氮化物在TFT基板的后续高温制程中的扩散（氮化物在高温下，会向上扩散）会受到第一、第二栅极的阻挡，因此，本申请实施例能明显减少驱动TFT的该氮化物层对开关TFT的该第二活性区的污染，从而减少其对开关TFT性能的影响，进而提高该TFT背板性能。
【附图说明】
图1是本申请TFT背板的制作方法一实施例的流程示意图；
图2A是图1实施例中基板的结构示意图；
图2B是图1实施例中形成第一活性区后TFT背板的结构示意图；
图2C是图1实施例中形成第一绝缘层后TFT背板的结构示意图；
图2D是图1实施例中形成第一、第二栅极后TFT背板的结构示意图；
图2E是图1实施例中去除未被第一、第二栅极覆盖的氮化物层后TFT背板的结构示意图；
图2F是图1实施例中形成第二绝缘层后TFT背板的结构示意图；
图2G是图1实施例中形成第二活性区后TFT背板的结构示意图；
图2H是图1实施例中形成第一、第二源极及第一、第二漏极后TFT背板的结构示意图；
图3是本申请TFT背板制作过程中TFT背板另一实施例的结构示意图；
图4是本申请TFT背板制作过程中TFT背板又一实施例的结构示意图；
图5是本申请TFT背板一实施例的结构示意图。
【具体实施方式】
一并参阅图1、图2A-图2H，图1是本申请TFT背板的制作方法一实施例的流程示意图；图2A-图2H是图1实施例TFT背板制作过程中TFT背板的结构示意图。需要注意的是，在本实施例中，第一活性区202、第一栅极205、第一源极209及第一漏极230对应于驱动TFT，相应地，第二活性区208、第二栅极206、第二源极231及第二漏极232对应于开关TFT。本实施例包括具体以下步骤：
步骤101：准备基板201（参阅图2A）。
在一个应用场景中，本实施例需对基板201进行清洗及预烘烤，清洗的目的在于去除基板201上的脏点、油污及纤维等以达到涂胶的最佳效果；预烘烤目的在于使该涂胶的均匀性更佳。
本实施例的基板201可以是但不局限于透明玻璃、透明树脂等。
步骤102：在基板201上形成第一活性区202（参阅图2B）；其中，第一活性区202为多晶硅材质。
本实施例的第一活性区202包括源区、漏区及导电沟道（未标出）。在一个应用场景中，本实施例采用先沉积非晶硅，然后对该非晶硅进行加热、快速退火或激光结晶，最后经黄光刻蚀的方法形成第一活性区202。
步骤103：在第一活性区202上及未被第一活性区202覆盖的基板201上依次沉积氧化物层203及氮化物层204作为第一绝缘层（参阅图2C）。
可选地，本实施的氮化物为氮化硅；当然在其它实施例中，可以采用氮化硼等其它氮化物代替氮化硅。
步骤104：在氮化物层204上分别形成相互独立的第一栅极205及第二栅极206，且第一栅极205位于第一活性区202上方（参阅图2D）。
本实施例的第一栅极205、第二栅极206为金属材料，通过黄光刻蚀而成，该金属可以是铜、铝、钼等。当然，在其它实施例中，第一栅极205、第二栅极206可以是其它金属材料或其它非金属材料。且本申请实施例不限定第一栅极205与第二栅极206的材料是否相同。
步骤105：去除第一栅极205与第二栅极206覆盖不到的氮化物层204（参阅图2E）。
可选地，本实施例以第一栅极205与第二栅极206为自对准（即自对准工艺），并采用干蚀法去除未被第一栅极205与第二栅极206覆盖的氮化物层204。当然，在其它实施例中，还可以采用铝栅等工艺替代自对准工艺和/或采用湿刻法替代干蚀法。
自对准工艺使得栅与源和漏的覆盖由杂质侧向扩散完成，比铝栅工艺的覆盖电容要小很多。此外，在铝栅工艺中，即使铝栅电极比沟道短，也可增加一步离子注入工艺填充栅区旁的未衔接部分，实现自对准,借以减小寄生电容,可提高TFT的开关速度和工作频率,同时提高电路的集成度。
此步骤主要是减少第一栅极205与第二栅极206覆盖不到的氮化物层204在TFT背板后续高温制成中向上扩散而对开关TFT的非多晶硅的第二活性区208（后续介绍）的污染。而被第一栅极205与第二栅极206覆盖的氮化物层204的扩散会被第一栅极205与第二栅极206阻挡，基本不会对第二活性区208造成污染。
步骤106：在第一栅极205与第二栅极206及未被氮化物层204覆盖的氧化物层203上沉积第二绝缘层207（参阅图2F）。
在一个应用场景中，第二绝缘层207为二氧化硅。
步骤107：在第二栅极206上方的第二绝缘层207上形成第二活性区208（参阅图2G）；其中，第二活性区208与第一活性区202的材质不同。
可选地，本实施例的第二活性区208为氧化物材质，以提高开关TFT的开关速度和降低其漏电流。该氧化物可以是但不局限于铟镓锌氧化物、铟锡锌氧化物等。当然，在其它实施例中，第二活性区208可以是非氧化物。
步骤108：为第一活性区202及第二活性区208分别制备第一源极209、第一漏极230及第二源极231、第二漏极232（参阅图2H）。
具体地，本实施例的第一源极209、第一漏极230及第二源极231、第二漏极232的制备方法步骤包括：在第一活性区202上方，对第二绝缘层207挖孔，并形成第一、第二电极孔；其中，该第一、第二电极孔均贯穿于整个第二绝缘层207；沉积金属层并对其进行刻蚀，以在第二绝缘层207上及该第一、第二电极孔中形成第一源极209及第一漏230极，且第一源极209及第一漏极230分别通过该第一、第二电极孔与第一活性区202两端接触，可以理解为分别与位于第一活性区202两端的源区及漏区接触；同时可以在第二活性区208两端上分别形成第二源极231及第二漏232极。
区别于现有技术，本实施例的未被去除的氮化物层只存在于氧化物层与第一、第二栅极之间，且该未被去除的氮化物在TFT基板的后续高温制程中的扩散会受到第一、第二栅极的阻挡，因此，本申请实施例能明显减少作为驱动TFT的氮化物层对开关TFT的第二活性区的污染，从而减少其对开关TFT性能的影响，进而提高该TFT背板性能。
可选地，参阅图3，图3是本申请TFT背板制作过程中TFT背板另一实施例的结构示意图。本实施例在准备基板301之后，在基板301上形成第一活性区302之前，在基板301上形成缓冲层303，即在基板301与第一活性区302及第一绝缘层304之间设置缓冲层303，以改善制备第一活性区302时的漏电等问题，从而进一步提升TFT基板的性能。在一个应用场景中，缓冲层303包括氮化硅层和氧化硅层；当然，在其它应用场景中，缓冲层303也可以只包括氮化硅层或氧化硅层。
可选地，参阅图4，图4是本申请TFT背板制作过程中TFT背板又一实施例的结构示意图本实施例可采用下述方法替代图1实施例的步骤108。具体地，在第二栅极401上方的第二绝缘层402上形成第二活性区403之后：在第二活性区403上及未被第二活性区403覆盖的第二绝缘层402上沉积刻蚀阻挡层404；相应地，形成第一源极405、第一漏极406及第二源极407、第二漏极408方法包括：在第一活性区410上方，对刻蚀阻挡层404及第二绝缘层402挖孔，并形成第一、第二电极孔；其中，该第一、第二电极孔均贯穿于整个刻蚀阻挡层404及第二绝缘层402，沉积金属层并对其进行刻蚀，以在刻蚀阻挡层404、第二绝缘层402上及该第一、第二电极孔中形成第一源极405及第一漏极406，且第一源极407及第一漏极408分别通过该第一、第二电极孔与第一活性区409两端接触。在第二活性区403的两端的上方，对刻蚀阻挡层404进行挖孔，并形成第三、第四电极孔，且贯穿刻蚀阻挡层404位于第二活性区403上的部分，沉积金属层并对其进行刻蚀，以在刻蚀阻挡层404上及该第三、第四电极孔中形成第二源极407及第二漏极408，且第二源极407及第二漏极408分别通过该第三、第四电极孔与第二活性区403的两端接触。
当然，本实施例的TFT基板的制作流程还包括一些必须的步骤，如钝化层、平坦层、导电层、像素定义层及像素电极的制备等，因这些步骤不是本申请的发明点，这里不进行详细叙述。
参阅图5，图5是本申请TFT背板一实施例的结构示意图。本实施例包括：基板501；设置于基板501上的第一活性区502；其中，第一活性区502为多晶硅材质；设置于第一活性区502上及未被第一活性区502覆盖的基板501上的第一绝缘层503；其中，第一绝缘层503包括依次沉积的氧化物层504及氮化物层；且该氮化物层包括相互独立的第一氮化物层505及第二氮化物层506；分别设置于第一氮化物层505及第二氮化物层506上的第一栅极507、第二栅极508；该氮化物层只存在于第一栅极507、第二栅极508与氧化物层504之间；设置于第一栅极507、第二栅极508及未被第一氮化物层505及第二氮化物层506覆盖的氧化物层504上第二绝缘层509；设置于第二栅极508上方的第二绝缘层509上的第二活性区510；其中，第二活性区510与第一活性区502的材质不同；分别连接第一活性区502两端的第一源极511及第一漏极512；分别连接第二活性区510两端的第二源极513、第二漏极514。
区别于现有技术，本实施例驱动TFT的氮化物层只存在于氧化物层与第一、第二栅极之间，且该未被去除的氮化物在TFT基板的后续高温制程中的扩散会受到第一、第二栅极的阻挡，因此，本申请实施例能明显减少作为驱动TFT的氮化物层对开关TFT的第二活性区的污染，从而减少其对开关TFT性能的影响，进而提高该TFT背板性能。
可选地，本实施例的第二活性区510为氧化物材质，以提高开关TFT的开关速度和降低其漏电流。该氧化物可以是但不局限于铟镓锌氧化物、铟锡锌氧化物等。当然，在其它实施例中，第二活性区208可以是非氧化物。
可选地，本实施例以第一栅极507与第二栅极508为自对准（及自对准工艺），并采用干蚀法去除未被第一栅极507与第二栅极508覆盖的氮化物层505及506。当然，在其它实施例中，还可以采用铝栅等工艺替代自对准工艺和/或采用湿刻法替代干蚀法。
可选地，本实施例的氮化物为氮化硅；当然在其它实施例中，可以采用氮化硼等其它氮化物代替氮化硅。
可选地，本实施例还包括：设置于501基板与第一活性区间502的缓冲层515，以改善制备第一活性区502时的漏电等问题，从而进一步提升TFT基板的性能。在一个应用场景中，缓冲层515包括氮化硅层和氧化硅层；当然，在其它应用场景中，缓冲层515也可以只包括氮化硅层或氧化硅层；或采用其它材质替代氮化硅和/或氧化硅。
可选地，本实施例还包括设置于第二绝缘层509上的刻蚀阻挡层516，为实现第二源极513及第二漏极514的非背沟道刻蚀提供支持。
当然，本实施例的TF基板还包括一些必须的步骤，如钝化层、平坦层、导电层、像素定义层及像素电极的制备等，因这些步骤不是本申请的发明点，这里不进行详细叙述。
需要注意的是，本申请实施例的第一源极、第一漏极、第二源极及第二漏极可以是铜、铝、钼等金属。当然，还可以采用其它金属材料或其它非金属材料代替这些金属。且本申请实施例不限定第一源极、第一漏极、第二源极、第二漏极、第一栅极及第二栅极的材料是否相同。
以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (16)

  1. 一种TFT背板的制作方法，其中，包括：
    准备基板；
    在所述基板上形成第一活性区；其中，所述第一活性区为多晶硅材质；
    在所述第一活性区上及未被所述第一活性区覆盖的所述基板上依次沉积氧化物层及氮化物层作为第一绝缘层；
    在所述氮化物层上分别形成相互独立的第一栅极及第二栅极，且所述第一栅极位于所述第一活性区上方；
    以所述第一、第二栅极为自对准，利用干蚀法去除所述未被所述第一、第二栅极覆盖的氮化物层。
    在所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上沉积第二绝缘层；
    在所述第二栅极上方的所述第二绝缘层上形成氧化物第二活性区；其中，所述第二活性区与所述第一活性区的材质不同；
    为所述第一活性区及所述第二活性区分别制备第一源极、第一漏极及第二源极、第二漏极。
  2. 根据权利要求1所述的方法，其中，
    在所述准备基板之后，在所述基板上形成第一活性区之前还包括：
    形成缓冲层；其中，所述缓冲层包括氮化硅层和/或氧化硅层。
  3. 根据权利要求1所述的方法，其中，
    所述氮化物为SiN。
  4. 根据权利要求1所述的方法，其中，
    在所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上沉积第二绝缘层之后，在所述第二栅极上方的所述第二绝缘层上形成氧化物第二活性区之前，在所述第二绝缘层上的形成刻蚀阻挡层。
  5. 一种TFT背板的制作方法，其中，包括：
    准备基板；
    在所述基板上形成第一活性区；其中，所述第一活性区为多晶硅材质；
    在所述第一活性区上及未被所述第一活性区覆盖的所述基板上依次沉积氧化物层及氮化物层作为第一绝缘层；
    在所述氮化物层上分别形成相互独立的第一栅极及第二栅极，且所述第一栅极位于所述第一活性区上方；
    去除所述第一、第二栅极覆盖不到的所述氮化物层；
    在所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上沉积第二绝缘层；
    在所述第二栅极上方的所述第二绝缘层上形成第二活性区；其中，所述第二活性区与所述第一活性区的材质不同；
    为所述第一活性区及所述第二活性区分别制备第一源极、第一漏极及第二源极、第二漏极。
  6. 根据权利要求5所述的方法，其中，
    所述去除所述第一、第二栅极覆盖不到的所述氮化物层包括：以所述第一、第二栅极为自对准，利用干蚀法去除所述未被所述第一、第二栅极覆盖的氮化物层。
  7. 根据权利要求5所述的方法，其特征在于，
    所述第二活性区为氧化物材质。
  8. 根据权利要求5所述的方法，其中，
    在所述准备基板之后，在所述基板上形成第一活性区之前还包括：
    形成缓冲层；其中，所述缓冲层包括氮化硅层和/或氧化硅层。
  9. 根据权利要求5所述的方法，其中，
    所述氮化物为SiN。
  10. 根据权利要求5所述的方法，其中，
    在所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上沉积第二绝缘层之后，在所述第二栅极上方的所述第二绝缘层上形成氧化物第二活性区之前，在所述第二绝缘层上的形成刻蚀阻挡层。
  11. 一种TFT背板，其中，包括：
    基板；
    第一活性区，设置于所述基板上；其中，所述第一活性区为多晶硅材质；
    第一绝缘层，设置于所述第一活性区上及未被所述第一活性区覆盖的所述基板上；其中，所述第一绝缘层包括依次沉积的氧化物层及氮化物层；且所述氮化物层包括相互独立的第一氮化物层及第二氮化物层；
    第一、第二栅极，分别设置于所述第一、第二氮化物层上；所述氮化物层只存在于所述第一、第二栅极与所述氧化物层之间；
    第二绝缘层，设置于所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上；
    第二活性区，设置于所述第二栅极上方的所述第二绝缘层上；其中，所述第二活性区与所述第一活性区的材质不同；
    第一源电极、第一漏电极，分别接触所述第一活性区的两端；
    第二源电极、第二漏电极，分别接触所述第二活性区的两端。
  12. 根据权利要求11所述的TFT背板，其中，
    所述第二活性区为氧化物材质。
  13. 根据权利要求11所述的TFT背板，其中，
    所述第一、第二氮化物层是以所述第一、第二栅极为自对准，利用干蚀法去除所述未被所述第一、第二栅极覆盖的氮化物层而形成的。
  14. 根据权利要求11所述的TFT背板，其中，
    还包括：设置于所述基板与所述第一活性区间的缓冲层；其中，所述缓冲层包括氮化硅层和/或氧化硅层。
  15. 根据权利要求11所述的TFT背板，其中，
    所述氮化物为SiN。
  16. 根据权利要求11所述的TFT背板，其中，
    在所述第一、第二栅极及未被所述氮化物层覆盖的所述氧化物层上沉积第二绝缘层之后，在所述第二栅极上方的所述第二绝缘层上形成氧化物第二活性区之前，在所述第二绝缘层上的形成刻蚀阻挡层。
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CN106952928A (zh) 2017-07-14
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JP2020509603A (ja) 2020-03-26
KR20190130153A (ko) 2019-11-21
US10347666B2 (en) 2019-07-09
EP3605613A4 (en) 2020-12-16
US20190096973A1 (en) 2019-03-28
KR102338735B1 (ko) 2021-12-13
CN106952928B (zh) 2018-10-23

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