WO2015096375A1 - 双面显示的oled阵列基板及其制备方法、显示装置 - Google Patents

双面显示的oled阵列基板及其制备方法、显示装置 Download PDF

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Publication number
WO2015096375A1
WO2015096375A1 PCT/CN2014/078393 CN2014078393W WO2015096375A1 WO 2015096375 A1 WO2015096375 A1 WO 2015096375A1 CN 2014078393 W CN2014078393 W CN 2014078393W WO 2015096375 A1 WO2015096375 A1 WO 2015096375A1
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Prior art keywords
emitting diode
organic light
light emitting
thin film
film transistor
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PCT/CN2014/078393
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English (en)
French (fr)
Inventor
徐利燕
张春兵
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/417,491 priority Critical patent/US9478595B2/en
Publication of WO2015096375A1 publication Critical patent/WO2015096375A1/zh

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    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a double-sided display organic light emitting diode (OLED) substrate, a method for fabricating the same, and a display device.
  • OLED organic light emitting diode
  • the structure of the OLED array substrate of the double-sided display in the prior art is as shown in FIG. 1.
  • the OLED column substrate of the prior art comprises a three-layer substrate and two completely independent films.
  • Transistor TFT, Thin Film Transistor
  • the OLED array substrate of this structure has a large thickness and a high production cost.
  • the present invention provides a double-sided display OLED array substrate, a preparation method thereof, and a display device, which can reduce the thickness of the OLED column substrate displayed on both sides and reduce the production cost.
  • an OLED array substrate including: a first substrate, a second substrate, and a first substrate and the second substrate; a first organic light emitting diode and a second organic light emitting diode; further comprising:
  • first thin film transistor and a second thin film transistor sharing the same gate electrode, wherein the first thin film transistor and the second thin film transistor are located between the first organic light emitting diode and the second organic light emitting diode, wherein The first thin film transistor is used to drive the first organic light emitting diode, and the second thin film transistor is used to drive the second organic light emitting diode.
  • the structures of the first thin film transistor and the second thin film transistor sharing the same gate electrode include:
  • a first source electrode a first active layer, a first gate insulating layer, the gate electrode, a second » insulating layer, a second active layer, and a second source/drain electrode.
  • the first thin film transistor includes: the first source/drain electrode, the first active layer, the first cabinet insulating layer, and the cabinet electrode;
  • the second thin film transistor includes: the pole electrode, the second gate insulating layer, The second active layer and the second source/drain electrode.
  • the first organic light emitting diode and the second organic light emitting diode each include a cathode, a light emitting layer and an anode.
  • the cathode may be a translucent cathode, and the anode may be a transparent anode or a reflection.
  • the anode is a transparent anode
  • the first thin film transistor further includes: a first light shielding layer between a channel region formed between the first source electrode and the first drain electrode and the first organic light emitting diode; Light emitted by the first organic light emitting diode to a channel region formed between the first source electrode and the first drain electrode;
  • the second thin film transistor further includes: a second light shielding layer between the channel region formed between the second source electrode and the second drain electrode and the second organic light emitting diode;
  • the double-sided display organic light-emitting diode array substrate further includes: a trench formed between the second organic light-emitting diode and the second drain electrode;
  • a first insulating layer Provided between the first organic light emitting diode and the first thin film transistor: a first insulating layer, a first data line, a first gate line, and a first protective layer, wherein the first data lines are respectively An anode of the first organic light emitting diode and a drain electrode of the first thin film transistor are connected, and the first gate line is connected to the »electrode;
  • a second insulating layer Provided between the second organic light emitting diode and the second thin film transistor: a second insulating layer, a second data line, a second gate line, and a second protective layer, wherein the second data lines are respectively The anode of the second organic light emitting diode and the drain electrode of the second thin film transistor are connected, and the second gate line is connected to the »electrode.
  • the first active layer and the second active layer are made of an oxide semiconductor material or a polysilicon material.
  • Embodiments of the present invention also provide a display device including the above-described double-sided display organic light emitting diode array substrate.
  • Embodiments of the present invention also provide a method for fabricating a double-sided display organic light emitting diode array substrate, including the following steps: Forming a first organic light emitting diode on the first substrate;
  • the first thin film transistor is used to drive the first organic light emitting diode
  • the second thin film transistor is used to drive the second organic light emitting diode
  • the step of forming the first organic light emitting diode on the first base substrate specifically includes:
  • An anode of the first organic light emitting diode is prepared on the light emitting layer of the first organic light emitting diode.
  • the step of forming the first thin film transistor and the second thin film transistor of the same electrode on the first organic light emitting diode specifically includes:
  • a second source electrode and a second drain electrode are formed on the second active layer.
  • the step of forming the first thin film transistor and the second thin film transistor that have the same gate electrode on the first organic light emitting diode specifically includes:
  • first light shielding layer Forming a first light shielding layer on the first source electrode and the first drain electrode, wherein the first light shielding layer is located at a channel region formed between the first source electrode and the first drain electrode Between the first organic light emitting diodes, for shielding the first organic light emitting diode from the first source electrode Light emitted by a channel region formed between the first drain electrode and the first drain electrode;
  • the step of forming a second organic light emitting diode on the second thin film transistor and disposing the second substrate on the second organic light emitting diode specifically includes:
  • a second substrate is disposed on a cathode of the second organic light emitting diode.
  • the method further includes: a first insulating layer, a first data line, a first gate line, and a first protective layer between the first organic light emitting diode and the first thin film transistor, wherein the first data line and the first An anode of an organic light emitting diode is connected to a drain electrode of the first thin film transistor, and the first gate line is connected to the gate electrode;
  • the method further includes: a second insulating layer, a second data line, a second gate line, and a second protective layer between the LED and the second thin film transistor, wherein the second data line and the second data line respectively The anode of the second organic light emitting diode and the drain electrode of the second thin film transistor are connected, and the second gate line is connected to the gate electrode.
  • the two thin film transistors in the double-sided display OLED array substrate have the same gate electrode, and only need two base substrates, so the thickness is reduced and the thickness is reduced compared with the conventional organic light emitting diode.
  • FIG. 1 is a schematic structural view of a double-sided display OLED array substrate in the prior art
  • FIG. 2 is a schematic structural view of a double-sided display organic light emitting diode array substrate according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a first thin film transistor and a second thin film transistor sharing the same cabinet electrode according to an embodiment of the present invention
  • FIG. 4 is another schematic structural view of a first thin film transistor and a second thin film transistor sharing the same gate electrode according to an embodiment of the present invention
  • 5A is a schematic flow chart of a method for fabricating a double-sided display organic light emitting diode array substrate according to an embodiment of the present invention
  • Figure 6 is a schematic view showing the structure of the double-sided organic light-emitting:::::::: pole tube array substrate prepared by the method of Figures 5A-5H. detailed description
  • FIG. 2 is a schematic structural diagram of a OLED display substrate with double-sided display according to an embodiment of the present invention.
  • the OLED display substrate of the double-sided display includes:
  • first organic light emitting diode and a second organic light emitting diode wherein the first organic light emitting diode and the second organic light emitting diode are located between the first substrate and the second substrate; a thin film transistor and a second thin film transistor, the first thin film crystal
  • the body tube and the second thin film transistor are located between the first organic light emitting diode and the second organic light emitting diode, wherein the first thin film transistor is used to drive the first organic light emitting diode, Two thin film transistors are used to drive the second organic light emitting diode.
  • the first substrate and the second substrate may be made of a material such as glass or quartz.
  • the first thin film transistor and the second thin film transistor share the same gate electrode, and only two base substrates are required, so that the thickness is reduced as compared with the conventional organic light emitting diode. Reduced production costs.
  • FIG. 3 is a schematic structural diagram of a first thin film transistor and a second thin film transistor sharing the same gate electrode according to an embodiment of the present invention.
  • the structures of the first thin film transistor and the second thin film transistor sharing the same gate electrode include: a first source/drain electrode, a first active layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, a second active layer, and a second source/drain electrode.
  • the first thin film transistor includes a first source/drain electrode, a first active layer, a first »insulating layer and a gate electrode;
  • the second thin film transistor includes a gate electrode, a first a second gate insulating layer, a second active layer, and a second source Z drain electrode.
  • the first thin film transistor and the second thin film transistor have the same gate electrode, which simplifies a substrate compared with the two thin film transistors in the conventional double-sided display organic light emitting diode array substrate.
  • the substrate and a gate electrode reduce the thickness and reduce the production cost.
  • the first thin film transistor and the second thin film crystal are thin film transistors of a top gate structure, that is, the gate electrode is disposed above the source/drain electrodes.
  • the gate electrode ffi of the first thin film transistor and the second thin film crystal may be disposed beside the source/drain electrodes.
  • Each of the first organic light emitting diode and the second organic light emitting diode includes a cathode, a light emitting layer, and an anode.
  • the cathode may be a translucent cathode
  • the anode may be a transparent anode or a reflective anode.
  • the first organic light emitting diode and the second organic light emitting diode emit light in a single direction, and emit light to the outside of the organic light emitting diode array substrate;
  • the first organic light emitting diode and the second organic light emitting diode emit light in both directions, emitting light to the outside of the organic light emitting diode array substrate, and emitting light to the inner side of the organic light emitting diode array substrate.
  • First organic light emitting diode and second organic light emitting diode The emission of light to the inside affects the channels of the first thin film transistor and the second thin film transistor located inside.
  • the first thin film transistor and A light shielding layer is disposed in the second thin film transistor.
  • the first thin film transistor may further include: a first light shielding layer between the channel region formed between the first source electrode and the first drain electrode and the first organic light emitting diode for shielding Light emitted by the first organic light emitting diode toward a channel region formed between the first source electrode and the first drain electrode;
  • the second thin film transistor may further include: a second light shielding layer between the channel region formed between the second source electrode and the second drain electrode and the second organic light emitting diode for shielding Light emitted by the second organic light emitting diode toward a channel region formed between the second source electrode and the second drain electrode.
  • the active layers (ie, the first active layer and the second active layer) in the first thin film transistor and the second thin film transistor in the above embodiments may be made of a silicon semiconductor material or a polycrystalline silicon semiconductor material, and Compared with the conventional thin film transistor in which the single crystal silicon semiconductor material is used to prepare the active layer, the channel length of the thin film transistor can be reduced, and the aperture ratio of the display device can be improved.
  • the double-sided display OLED array substrate of the embodiment of the present invention may further include:
  • a first insulating layer Provided between the first organic light emitting diode and the first thin film transistor: a first insulating layer, a first data line, a first gate line, and a first protective layer, wherein the first data lines are respectively An anode of the first organic light emitting diode and a drain electrode of the first thin film transistor are connected, and the first » line is connected to the gate electrode;
  • the first data line and the first » line may be disposed in the same layer, or may be disposed in different layers.
  • a second insulating layer, a second data line, a second wire, and a second protective layer Provided between the second organic light emitting diode and the second thin film transistor: a second insulating layer, a second data line, a second wire, and a second protective layer, wherein the second data lines are respectively Connecting an anode of the second organic light emitting diode and a drain electrode of the second thin film transistor,
  • the second data line and the second » line may be disposed in the same layer or may be disposed in different layers.
  • the embodiment of the invention further provides a method for preparing an organic light emitting diode array substrate with double-sided display, which comprises the following steps:
  • Step 1 forming a first organic light emitting diode on the first substrate
  • Step 2 forming a first thin film transistor and a second thin film transistor sharing the same gate electrode on the first organic light emitting diode;
  • Step 3 forming a second organic light emitting diode on the second thin film transistor, and disposing a second substrate on the second organic light emitting diode;
  • the first thin film transistor is used to drive the first organic light emitting diode
  • the second thin film transistor is used to drive the second organic light emitting diode
  • the step of forming the first organic light emitting diode on the first substrate may specifically include:
  • An anode of the first organic light emitting diode is prepared on the light emitting layer of the first organic light emitting diode.
  • the step of forming the first thin film transistor and the second thin film transistor sharing the same gate electrode on the first organic light emitting diode may specifically include:
  • a second source electrode and a second drain electrode are formed on the second active layer.
  • the step of forming a second organic light emitting diode on the second thin film transistor and disposing the second substrate on the second organic light emitting diode may specifically include:
  • the second base substrate is disposed on the cathode of the second organic light emitting diode.
  • the step of forming the first thin film transistor and the second thin film transistor sharing the same gate electrode on the first organic light emitting diode may further include:
  • first light shielding layer Forming a first light shielding layer on the first source electrode and the first drain electrode, wherein the first light shielding layer is located at a channel region formed between the first source electrode and the first drain electrode Between the first organic light emitting diodes, for blocking light emitted by the first organic light emitting diode to a channel region formed between the first source electrode and the first drain electrode;
  • the method further includes: a first insulating layer, a first data line, a first gate line, and a first protective layer between the organic light emitting diode and the first thin film transistor, wherein the first data line and the first organic light emitting diode respectively An anode and a drain electrode of the first thin film transistor are connected, and the first gate line is connected to the cabinet electrode;
  • the method further includes: a second insulating layer, a second data line, a second gate line, and a second protective layer between the organic light emitting diode and the second thin film transistor, wherein the second data line and the second organic light emitting diode are
  • FIG. 5A-5H are schematic diagrams showing a method for fabricating a double-sided display organic light-emitting diode array substrate according to an embodiment of the present invention, the preparation method comprising the following steps:
  • first organic light emitting diode forming a first organic light emitting diode on a first substrate, wherein the first organic light emitting diode comprises a cathode, a light emitting layer and an anode.
  • the first substrate may be a substrate substrate made of glass, quartz or the like
  • the cathode may be a translucent cathode
  • the anode may be a transparent anode or a reflective anode.
  • the anode is a transparent anode.
  • Fig. 5B A first insulating layer is formed on the anode of the first organic light emitting diode, and an opening is formed in the first insulating layer.
  • the first insulating layer can be made of silicon nitride (SiNx).
  • an open hole may be formed on the first insulating layer by a dry etching method.
  • FIG. 5C forming a first data line and a first gate line on the first insulating layer.
  • the metal for forming the first data line and the first gate line is filled into the opening formed on the first insulating layer, and the first data line and the first data line An anode connection of an organic light emitting diode.
  • FIG. 5D forming a first protective layer on the first data line and the first meander line, and forming two openings on the first protective layer, wherein one opening corresponds to the first data line, and one opening corresponds to the first Grid line.
  • the first protective layer can be made of silicon nitride (SiNx).
  • an open hole may be formed on the first protective layer by a dry etching method.
  • the ideal state is that the upper surface of the first protective layer is flat, and in actual operation, if the component under the first protective layer is not flat, the protective layer is formed after the protective layer is formed.
  • the upper surface is also uneven, but this does not affect the implementation of the solution, but for better results, the upper surface can be flattened by a process such as engraving.
  • the subsequently formed light-shielding insulating material film, semiconductor film, first»insulating film, and the like are also the case.
  • Figure 5E A first source electrode and a first drain electrode of the first thin film transistor are formed on the first protective layer.
  • the first source electrode and the first drain electrode may be formed by a wet etching method.
  • the metal forming the first source electrode and the first drain electrode fills the opening formed on the first protective layer (including the opening corresponding to the first data line) And an opening corresponding to the first gate line) such that the first data line and the first drain electrode are connected.
  • FIG. 5F forming a first light shielding layer and a first active layer on the first source electrode and the first drain electrode, wherein the first light shielding layer is located between the first source electrode and the first drain electrode Between the track region and the first organic light emitting diode, the light emitted by the first organic light emitting diode to the channel region formed between the first source electrode and the first drain electrode is blocked.
  • Forming the first light shielding layer and the first active layer on the first source electrode and the first drain electrode may specifically include the following steps:
  • Step 5F1 coating a light-shielding insulating material film on the first source electrode and the first drain electrode; Step 5F2: forming a pattern of the first light-shielding layer by an etching process.
  • Step 5F3 coating a semiconductor film on the first light shielding layer
  • the semiconductor thin film may be a polycrystalline silicon semiconductor thin film, an oxide semiconductor thin film or the like.
  • Step 5F4 forming a pattern of the first active layer by an etching process.
  • Fig. 5G A first gate insulating layer is formed on the first active layer, and an opening is formed in the first gate insulating layer.
  • Fig. 51I A germanium electrode common to the first thin film transistor and the second thin film transistor is formed on the first gate insulating layer.
  • the metal for forming the gate electrode is filled into the opening formed in the first gate insulating layer, thereby connecting the gate electrode and the first gate line.
  • a second gate insulating layer, a second active layer, a second light shielding layer, a second source/drain electrode, and a second protective layer, a second data line/second of the second thin film transistor are sequentially formed on the gate electrode a gate line, a second insulating layer, and an anode, a light emitting layer, and a cathode of the second organic light emitting diode.
  • the second protective layer it is also required to form a connection on the second protective layer and the second gate insulating layer.
  • the opening is filled with a metal for forming a second » line
  • an opening for connecting the second data line and the second drain electrode the opening is filled with useful a metal forming the second data line; while forming the second insulating layer, it is also necessary to form an opening for connecting the second data line and the anode of the second thin film transistor on the second insulating layer (in the opening)
  • a metal filled with ffi to form an anode of the second thin film transistor A metal filled with ffi to form an anode of the second thin film transistor).
  • positions of the first source electrode and the first drain electrode in the first thin film transistor in the embodiment of the present invention may be interchanged, and the positions of the second source electrode and the second drain electrode in the second thin film transistor may be exchange.
  • FIG. 6 is a double-sided display organic light emitting diode array substrate prepared by the method of FIG. 5A and 5H.
  • the embodiment of the invention further provides a display device comprising the double-sided display organic light emitting diode array substrate according to any of the above embodiments.

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Abstract

一种双面显示的OLED阵列基板及其制备方法、显示装置，双面显示的有机发光二极管阵列基板包括：第一衬底基板、第二衬底基板、位于第一衬底基板和第二衬底基板之间的第一有机发光二极管和第二有机发光二极管、以及位于第一有机发光二极管和第二有机发光二极管之间的共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管，其中第一薄膜晶体管用于驱动第一有机发光二极管，第二薄膜晶体管用于驱动第二有机发光二极管。能够减小双面显示的OLED阵列基板的厚度，降低生产成本。

Description

显示的 OLED阵列基板及其制备方法、 显示装置
本发明涉及显示技术领域， 尤其涉及一种双面显示的有机发光二极管 (OLED, Organic Li ghi Emitting Diode) 阵歹 il基板及其制备方法、 显示装置。
现有技术中的双面显示的 OLED阵列基板的结构如图 1所示， 从图〗 中 可以看出， 现有技术中的 OLED 列基板包括三层衬底基板及两个结构完全 独立的薄膜晶体管 (TFT, Thin Film Transistor) , 这种结构的 OLED阵列基 板的厚度较大， 生产成本较高。
有鉴于此， 本发明提供一种双面显示的 OLED阵列基板及其制备方法、 显示装置， 能够减小双面显示的 OLED 列基板的厚度， 降低生产成本。
为解决上述技术问题， 本发明提供一种有机发光二极管阵列基板， 包括: 第一衬底基板、 第二衬底基板以及位于所述第一衬底基板和所述第二衬底基 板之间的第一有机发光二极管和第二有机发光二极管； 还包括：
共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管， 所述第一薄膜晶 体管和所述第二薄膜晶体管位于所述第一有机发光二极管和所述第二有机发 光二极管之间， 其中， 所述第一薄膜晶体管用于驱动所述第一有机发光二极 管， 所述第二薄膜晶体管用于驱动所述第二有机发光二级管。
可选地， 所述共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管的结 构包括：
第一源應电极、 第一有源层、 第一栅绝缘层、 所述栅电极、 第二 »绝缘 层、 第二有源层及第二源 /漏电极。
可选地， 所述第一薄膜晶体管包括依次设置的： 所述第一源 /漏电极、 所 述第一有源层、 所述第一櫥绝缘层及所述櫥电极；
所述第二薄膜晶体管包括依次设置的： 所述極电极、所述第二栅绝缘层、 所述第二有源层及所述第二源 /漏电极。
可选地， 所述第一有机发光二极管和所述第二有机发光二极管均包括阴 极、 发光层和阳极。
可选地， 所述阴极可以为半透明阴极， 所述阳极可以为透明阳极或反射 可选地， 所述阳极为透明阳极时；
所述第一薄膜晶体管还包括： 第一遮光层， 位于所述第一源电极和所述 第一漏电极之间形成的沟道区域与所述第一有机发光二极管之间， 用于遮挡 所述第一有机发光二极管向所述第一源电极和所述第一漏电极之间形成的沟 道区域发射的光线；
所述第二薄膜晶体管还包括： 第二遮光层， 位于所述第二源电极和所述 第二漏电极之间形成的沟道区域与所述第二有机发光二极管之间， 用于遮挡 所述第二有机发光二极管向所述第二源电极和所述第二漏电极之间形成的沟 可选地， 所述双面显示的有机发光二极管阵列基板还包括：
设置于所述第一有机发光二极管和所述第一薄膜晶体管之间的： 第一绝 缘层、 第一数据线、 第一栅线及第一保护层， 其中， 所述第一数据线分别与 所述第一有机发光二极管的阳极及所述第一薄膜晶体管的漏电极连接， 所述 第一栅线与所述 »电极连接；
设置于所述第二有机发光二极管和所述第二薄膜晶体管之间的： 第二绝 缘层、 第二数据线、 第二栅线及第二保护层， 其中， 所述第二数据线分别与 所述第二有机发光二极管的阳极及所述第二薄膜晶体管的漏电极连接， 所述 第二栅线与所述 »电极连接。
可选地， 所述第一有源层和所述第二有源层为氧化物半导体村料或多晶 硅材料制成。
本发明的实施例还提供一种显示装置， 包括上述双面显示的有机发光二 极管阵列基板。
本发明的实施例还提供一种双面显示的有机发光二极管阵列基板的制备 方法， 包括以下歩骤： 在第一衬底基板上形成第一有机发光二极管；
在所述第一有机发光二极管上形成共 ffi同一櫥电极的第一薄膜晶体管和 第二薄膜晶体管；
在所述第二薄膜晶体管上形成第二有机发光二极管， 并在所述第二有机 发光二极管上设置第二衬底基板；
其中， 所述第一薄膜晶体管用于驱动所述第一有机发光二极管， 所述第 二薄膜晶体管用于驱动所述第二有机发光二级管。
可选地， 所述在第一衬底基板上形成第一有机发光二极管的步骤具体包 括：
在所述第一衬底基板上制备所述第一有机发光二极管的阴极；
在所述第一有机发光二极管的阴极上制备所述第一有机发光二极管的发 光层；
在所述第一有机发光二极管的发光层上制备所述第一有机发光二极管的 阳极。
可选地， 所述在所述第一有机发光二极管上形成共) ¾同一»电极的第一 薄膜晶体管和第二薄膜晶体管的步骤具体包括：
在所述第一有机发光二极管上形成第一源电极和第一漏电极；
在所述第一源电极和所述第一漏电极上形成第一有源层；
在所述第一有源层上形成第一栅绝缘层；
在所述第一栅绝缘层上形成栅电极；
在所述栅电极上形成第二栅绝缘层；
在所述第二栅绝缘层上形成第二有源层；
在所述第二有源层上形成第二源电极和第二漏电极。
可选地， 所述在所述第一有机发光二极管上形成共 同一栅电极的第一 薄膜晶体管和第二薄膜晶体管的步骤具体包括：
在所述第一有机发光二极管上形成第一源电极和第一漏电极；
在所述第一源电极和第一漏电极上形成第一遮光层， 其中， 所述第一遮 光层位于所述第一源电极和所述第一漏电极之间形成的沟道区域与所述第一 有机发光二极管之间， 用于遮挡所述第一有机发光二极管向所述第一源电极 和所述第一漏电极之间形成的沟道区域发射的光线；
在所述第一遮光层上形成第一有源层；
在所述第一有源层上形成第一栅绝缘层；
在所述第一櫥绝缘层上形成栅电极；
在所述栅电极上形成第二栅绝缘层；
在所述第二櫥绝缘层上形成第二有源层；
在所述第二有源层上形成第二遮光层；
在所述第二遮光层上形成第二源电极和第二漏电极， 其中， 所述第二遮 光层位于所述第二源电极和所述第二漏电极之间形成的沟道区域与所述第二 有机发光二极管之间， 用于遮挡所述第二有机发光二极管向所述第二源电极 和所述第二漏电极之间形成的沟道区域发射的光线。
可选地， 所述在所述第二薄膜晶体管上形成第二有机发光二极管， 并在 所述第二有机发光二极管上设置第二衬底基板的步骤具体包括：
在所述第二薄膜晶体管上制备第二有机发光二极管的阳极；
在所述第二有机发光二极管的阳极上制备所述第二有机发光二极管的发 光层；
在所述第二有机发光二极管的发光层上制备所述第二有机发光二极管的 阴极；
在所述第二有机发光二极管的阴极上设置第二衬底基板。
可选地， 在所述在第一衬底基板上形成第一有机发光二极管之后， 在所 述第一有机发光二极管上形成共用同一栅电极的第一薄膜晶体管和第二薄膜 晶体管之前还包括： 在所述第一有机发光二极管与所述第一薄膜晶体管之间 第一绝缘层、 第一数据线、 第一栅线及第一保护层， 其中， 所述第一数据线 分别与所述第一有机发光二极管的阳极及所述第一薄膜晶体管的漏电极连 接， 所述第一栅线与所述栅电极连接；
在所述第一有机发光二极管上形成共 同一栅电极的第一薄膜晶体管和 第二薄膜晶体管之后， 在所述第二薄膜晶体管上形成第二有机发光二极管之 前还包括： 在所述第二有机发光二极管与所述第二薄膜晶体管之间第二绝缘 层、 第二数据线、 第二栅线及第二保护层， 其中， 所述第二数据线分别与所 述第二有机发光二极管的阳极及所述第二薄膜晶体管的漏电极连接， 所述第 二栅线与所述栅电极连接。
本发明的上述技术方案的有益效果如下：
双面显示的 OLED阵列基板中的两薄膜晶体管共 ffi同一栅电极， 且只需 要两个衬底基板， 因此与传统的有机发光二极管相比， 减小了厚度， 降低了
图 1为现有技术中的双面显示的 OLED阵列基板的结构示意图； 图 2为本发明实施例的双面显示的有机发光二极管阵列基板的一个结构 示意图；
图 3为本发明实施例的共用同一櫥电极的第一薄膜晶体管和第二薄膜晶 体管的一结构示意图；
图 4为本发明实施例的共用同一栅电极的第一薄膜晶体管和第二薄膜晶 体管的另一结构示意图；
图 5A 5H为本发明实施例的双面显示的有机发光二极管阵列基板的制备 方法的一流程示意图；
图 6为采用图 5A- 5H中的方法制备的双面显示的有机发光::：::极管阵列基 板的结构示意图。 具体实施方式
为使本发明要解决的技术问题、 技术方案和优点更加清楚， 下面将结合 附图及具体实施例进行详细描述。
请参考图 2， 图 2为本发明实施例的双面显示的有机发光二极管阵列基 板的一结构示意图， 该双面显示的有机发光二极管阵列基板包括：
第一衬底基板和第二衬底基板；
第一有机发光二极管和第二有机发光二极管， 所述第一有机发光二极管 和所述第二有机发光二极管位于所述第一衬底基板和第二衬底基板之间； 共用同一極电极的第一薄膜晶体管和第二薄膜晶体管， 所述第一薄膜晶 体管和所述第二薄膜晶体管位于所述第一有机发光二极管和所述第二有机发 光二极管之间， 其中， 所述第一薄膜晶体管用于驱动所述第一有机发光二极 管， 所述第二薄膜晶体管用于驱动所述第二有机发光二级管。
其中， 第一衬底基板和第二衬底基板可以为采用玻璃、 石英等材料制成 衬底基板。
上述双面显示的有机发光二极管阵列基板中， 第一薄膜晶体管和第二薄 膜晶体管共用同一栅电极， 且只需要两个衬底基板， 因此与传统的有机发光 二极管相比， 减小了厚度， 降低了生产成本。
请参考图 3， 图 3为本发明实施例的共用同一栅电极的第一薄膜晶体管 和第二薄膜晶体管的一结构示意图， 共用同一栅电极的第一薄膜晶体管和第 二薄膜晶体管的结构包括： 第一源 /漏电极、 第一有源层、 第一栅绝缘层、 栅 电极、 第二栅绝缘层、 第二有源层及第二源 /漏电极。 其中， 所述第一薄膜晶 体管包括依次设置的：第一源 /漏电极、第一有源层、第一 »绝缘层及栅电极； 所述第二薄膜晶体管包括依次设置的： 栅电极、 第二栅绝缘层、 第二有源层 及第二源 Z漏电极。
从图 3中可以看出，第一薄膜晶体管和第二薄膜晶体管共) ¾同一栅电极， 与传统的双面显示的有机发光二极管阵列基板中的两薄膜晶体管相比， 简化 了一层衬底基板及一个栅电极， 从而减小了厚度， 降低了生产成本。
图 3所示的实施例中， 第一薄膜晶体管和第二薄膜晶体均为顶栅结构的 薄膜晶体管， 即栅电极设置于源 /漏电极的上方， 当然， 在本发明的其他实施 例中， 第一薄膜晶体管和第二薄膜晶体的栅电极 ffi可以设置于源 /漏电极的旁 侧。
上述第一有机发光二极管和第二有机发光二极管均包括阴极、 发光层和 阳极。 其中， 阴极可以为半透明阴极， 阳极可以为透明阳极或反射阳极。
当阳极为反射阳极时， 第一有机发光二极管和第二有机发光二极管为单 向发光， 向有机发光二极管阵列基板的外侧发射光线；
当阳极为透明阳极时， 第一有机发光二极管和第二有机发光二极管为双 向发光， 既向有机发光二极管阵列基板的外侧发射光线， 又向有机发光二极 管阵列基板的的内侧发射光线。 第一有机发光二极管和第二有机发光二极管 向内侧发射光线会对位于内侧的第一薄膜晶体管和第二薄膜晶体管的沟道产 生影响。
为了避免双向发光的第一有机发光二极管和第二有机发光二极管发射的 光线对内侧的第一薄膜晶体管和第二薄膜晶体管的沟道产生影响， 本发明实 施例中， 可以在第一薄膜晶体管和第二薄膜晶体管中设置一遮光层。
具体的， 如图 4所示：
所述第一薄膜晶体管还可以包括： 第一遮光层， 位于所述第一源电极和 所述第一漏电极之间形成的沟道区域与所述第一有机发光二极管之间， 用于 遮挡所述第一有机发光二极管向所述第一源电极和所述第一漏电极之间形成 的沟道区域发射的光线；
所述第二薄膜晶体管还可以包括： 第二遮光层， 位于所述第二源电极和 所述第二漏电极之间形成的沟道区域与所述第二有机发光二极管之间， 用于 遮挡所述第二有机发光二极管向所述第二源电极和所述第二漏电极之间形成 的沟道区域发射的光线。
上述实施例中的第一薄膜晶体管和第二薄膜晶体管中的有源层 （即第一 有源层和第二有源层）可以采) ¾氧化物半导体材料或多晶硅半导体材料制成， 与采用单晶硅半导体材料制备有源层的传统薄膜晶体管相比， 可以减小薄膜 晶体管的沟道长度， 提高显示装置的开口率。
进一歩地， 如图 6所示， 本发明实施例的双面显示的有机发光二极管阵 列基板还可以包括：
设置于所述第一有机发光二极管和所述第一薄膜晶体管之间的： 第一绝 缘层、 第一数据线、 第一栅线及第一保护层， 其中， 所述第一数据线分别与 所述第一有机发光二极管的阳极及所述第一薄膜晶体管的漏电极连接， 所述 第一 »线与所述栅电极连接；
所述第一数据线和所述第一 »线可以同层设置， 也可以设置于不同层。 设置于所述第二有机发光二极管和所述第二薄膜晶体管之间的： 第二绝 缘层、 第二数据线、 第二櫥线及第二保护层， 其中， 所述第二数据线分别与 所述第二有机发光二极管的阳极及所述第二薄膜晶体管的漏电极连接， 所述 所述第二数据线和所述第二 »线可以同层设置， 也可以设置于不同层。 对应于上述双面显示的有机发光二极管阵列基板， 本发明实施例还提供 一种双面显示的有机发光二极管阵列基板的制备方法， 包括以下步骤：
步骤一： 在第一衬底基板上形成第一有机发光二极管；
步骤二： 在所述第一有机发光二极管上形成共用同一栅电极的第一薄膜 晶体管和第二薄膜晶体管；
步骤三： 在所述第二薄膜晶体管上形成第二有机发光二极管， 并在所述 第二有机发光二极管上设置第二衬底基板；
其中， 所述第一薄膜晶体管用于驱动所述第一有机发光二极管， 所述第 二薄膜晶体管用于驱动所述第二有机发光二级管。
进一步地， 所述在第一衬底基板上形成第一有机发光二极管的步骤可以 具体包括：
在所述第一衬底基板上制备所述第一有机发光二极管的阴极；
在所述第一有机发光二极管的阴极上制备所述第一有机发光二极管的发 光层；
在所述第一有机发光二极管的发光层上制备所述第一有机发光二极管的 阳极。
进一步地， 所述在所述第一有机发光二极管上形成共用同一栅电极的第 一薄膜晶体管和第二薄膜晶体管的步骤可以具体包括：
在所述第一有机发光二极管上形成第一源电极和第一漏电极；
在所述第一源电极和所述第一漏电极上形成第一有源层；
在所述第一有源层上形成第一栅绝缘层；
在所述第一 »绝缘层上形成栅电极；
在所述栅电极上形成第二栅绝缘层；
在所述第二 »绝缘层上形成第二有源层；
在所述第二有源层上形成第二源电极和第二漏电极。
进一步地， 在所述第二薄膜晶体管上形成第二有机发光二极管， 并在所 述第二有机发光二极管上设置第二衬底基板的步骤可以具体包括：
在所述第二薄膜晶体管上制备第二有机发光二极管的阳极； 在所述第二有机发光二极管的阳极上制备所述第二有机发光二极管的发 光层；
在所述第二有机发光二极管的发光层上制备所述第二有机发光二极管的 在所述第二有机发光二极管的阴极上设置第二衬底基板。
可选择地， 上述在所述第一有机发光二极管上形成共用同一栅电极的第 一薄膜晶体管和第二薄膜晶体管的步骤还可以具体包括：
在所述第一有机发光二极管上形成第一源电极和第一漏电极；
在所述第一源电极和第一漏电极上形成第一遮光层， 其中， 所述第一遮 光层位于所述第一源电极和所述第一漏电极之间形成的沟道区域与所述第一 有机发光二极管之间， 用于遮挡所述第一有机发光二极管向所述第一源电极 和所述第一漏电极之间形成的沟道区域发射的光线；
在所述第一遮光层上形成第一有源层；
在所述第一有源层上形成第一栅绝缘层；
在所述第一 »绝缘层上形成栅电极；
在所述栅电极上形成第二栅绝缘层；
在所述第二 »绝缘层上形成第二有源层；
在所述第二有源层上形成第二遮光层；
在所述第二遮光层上形成第二源电极和第二漏电极， 其中， 所述第二遮 光层位于所述第二源电极和所述第二漏电极之间形成的沟道区域与所述第二 有机发光二极管之间， 用于遮挡所述第二有机发光二极管向所述第二源电极 和所述第二漏电极之间形成的沟道区域发射的光线。
在本发明的一些实施例中：
在所述在第一衬底基板上形成第一有机发光二极管之后， 在所述第一有 机发光二极管上形成共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管之 前还包括： 在所述第一有机发光二极管与所述第一薄膜晶体管之间第一绝缘 层、 第一数据线、 第一栅线及第一保护层， 其中， 所述第一数据线分别与所 述第一有机发光二极管的阳极及所述第一薄膜晶体管的漏电极连接， 所述第 一栅线与所述櫥电极连接； 在所述第一有机发光二极管上形成共^同一 »电极的第一薄膜晶体管和 第二薄膜晶体管之后， 在所述第二薄膜晶体管上形成第二有机发光二极管之 前还包括： 在所述第二有机发光二极管与所述第二薄膜晶体管之间第二绝缘 层、 第二数据线、 第二栅线及第二保护层， 其中， 所述第二数据线分别与所 述第二有机发光二极管的阳极及所述第二薄膜晶体管的漏电极连接， 所述第 二栅线与所述栅电极连接。
请参考图 5A- 5H， 图 5A- 5H为本发明实施例的双面显示的有机发光二极 管阵列基板的制备方法的一流程示意图， 该制备方法包括以下步骤：
图 5A: 在第一衬底基板上形成第一有机发光二极管， 其中， 第一有机发 光二极管包括依次形成的： 阴极、 发光层及阳极。
具体的， 所述第一衬底基板可以为采^玻璃、 石英等 料制成的衬底基 板， 所述阴极可以为半透明阴极， 所述阳极可以为透明阳极或反射阳极。 本 实施例中,所述阳极为透明阳极。
图 5B: 在第一有机发光二极管的阳极上形成第一绝缘层， 并在所述第一 绝缘层上形成开孔。
具体的， 第一绝缘层可以采 氮化硅 （SiNx) 制成。
本步骤中可以采 干法刻蚀的方法在第一绝缘层上形成开孔。
图 5C: 在第一绝缘层上形成第一数据线和第一栅线。
在形成第一数据线和第一栅线时， 用于形成第一数据线和第一栅线的金 属会填充到第一绝缘层上形成的开孔中， 丛而使得第一数据线和第一有机发 光二极管的阳极连接。
图 5D: 在第一数据线和第一欐线上形成第一保护层， 并在所述第一保护 层上形成两开孔， 其中一个开孔对应第一数据线， 一个开孔对应第一栅线。
具体的， 第一保护层可以采 氮化硅 （SiNx) 制成。
本步骤中可以采 干法刻蚀的方法在第一保护层上形成开孔。
本步骤中， 在形成第一保护层后， 理想状态是第一保护层的上表面是平 整的， 而实际操作中， 如果第一保护层下的部件不平整， 那么形成保护层后， 保护层的上表面也是不平整的， 但是这并不影响本方案的实现， 但是为了更 好的效果， 可以通过工艺如刻烛等方式使其上表面平整。 同理， 后续形成的遮光绝缘材料薄膜、 半导体薄膜、 第一 »绝缘层薄膜 等， 其情况也是如此。
图 5E: 在第一保护层上形成第一薄膜晶体管的第一源电极和第一漏电 极。
本步骤中， 可以采用湿法刻蚀的方法形成第一源电极和第一漏电极。 在形成第一源电极和第一漏电极时， ffi于形成第一源电极和第一漏电极 的金属会填充到第一保护层上形成的开孔 （包括与第一数据线对应的开孔以 及与第一栅线对应的开孔） 中， 从而使得第一数据线和第一漏电极连接。
图 5F: 在第一源电极和第一漏电极上形成第一遮光层和第一有源层， 其 中第一遮光层位于所述第一源电极和所述第一漏电极之间形成的沟道区域与 第一有机发光二极管之间， ^于遮挡所述第一有机发光二级管向所述第一源 电极和所述第一漏电极之间形成的沟道区域发射的光线。
在第一源电极和第一漏电极上形成第一遮光层和第一有源层可以具体包 括以下步骤：
步骤 5F1 : 在第一源电极和第一漏电极上涂覆遮光绝缘材料薄膜； 步骤 5F2: 通过刻蚀工艺形成第一遮光层的图形。
步骤 5F3 : 在第一遮光层上涂覆半导体薄膜；
该半导体薄膜可以为多晶硅半导体薄膜、 氧化物半导体薄膜等。
步骤 5F4 : 通过刻蚀工艺形成第一有源层的图形。
图 5G: 在第一有源层上形成第一栅绝缘层， 并在第一栅绝缘层上形成开 孔。
图 51 I：在第一栅绝缘层上形成第一薄膜晶体管和第二薄膜晶体管共用的 欐电极。
在形成栅电极时， 用于形成栅电极的金属会填充到第一栅绝缘层上形成 的开孔中， 从而使得栅电极和第一栅线连接。
然后， 依次在栅电极上形成第二薄膜晶体管的第二栅绝缘层、 第二有源 层、 第二遮光层、 第二源 /漏电极， 以及第二保护层、 第二数据线 /第二栅线、 第二绝缘层， 以及第二有机发光二极管的阳极、 发光层及阴极。 其中， 在形 成第二保护层的同时， 还需要在第二保护层及第二栅绝缘层上形成用于连接 »电极和第二栅线的开孔（该开孔中填充有用于形成第二 »线的金属）， 及用 于连接第二数据线和第二漏电极的开孔 （该开孔中填充有用于形成第二数据 线的金属）； 在形成第二绝缘层的同时， 还需要在第二绝缘层上形成用于连接 第二数据线和第二薄膜晶体管的阳极的开孔 （该开孔中填充有 ffi于形成第二 薄膜晶体管的阳极的金属）。
需要说明的是， 本发明实施例中的第一薄膜晶体管中的第一源电极和第 一漏电极的位置可以互换， 第二薄膜晶体管中的第二源电极和第二漏电极的 位置可以互换。
请参考图 6， 图 6为采用图 5A 5H中的方法制备的双面显示的有机发光 二极管阵列基板。
本发明实施例还提供一种显示装置， 包括上述任一实施例中所述的双面 显示的有机发光二极管阵列基板。
以上所述是本发明的优选实施方式， 应当指出， 对于本技术领域的普通 技术人员来说， 在不脱离本发明所述原理的前提下， 还可以作出若干改进和 润饰， 这些改进和润饰也应视为本发明的保护范围。

Claims

1 . 一种双面显示的有机发光二极管阵列基板， 包括： 第一衬底基板、 第 二衬底基板以及位于所述第一衬底基板和所述第二衬底基板之间的第一有机 发光二极管和第二有机发光二极管； 其特征在于， 还包括：
共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管， 所述第一薄膜晶 体管和所述第二薄膜晶体管位于所述第一有机发光二极管和所述第二有机发 光二极管之间， 其中， 所述第一薄膜晶体管用于驱动所述第一有机发光二极 管， 所述第二薄膜晶体管用于驱动所述第二有机发光二级管。
2. 如权利要求 1所述的双面显示的有机发光二极管阵列基板， 其特征在 于， 共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管的结构包括：
第一源 /漏电极、 第一有源层、 第一 »绝缘层、 所述栅电极、 第二櫥绝缘 层、 第二有源层及第二源 Z漏电极。
3. 如权利要求 2所述的双面显示的有机发光二极管阵列基板， 其特征在 于：
所述第一薄膜晶体管包括依次设置的： 所述第一源 /漏电极、 所述第一有 源层、 所述第一 »绝缘层及所述栅电极；
所述第二薄膜晶体管包括依次设置的： 所述栅电极、所述第二栅绝缘层、 所述第二有源层及所述第二源 /漏电极。
4. 如权利要求 1或 2所述的双面显示的有机发光二极管阵列基板， 其特 征在于， 所述第一有机发光二极管和所述第二有机发光二极管均包括阴极、 发光层和阳极。
5. 如权利要求 4所述的双面显示的有机发光二极管阵列基板， 其特征在 于， 所述阴极可以为半透明阴极， 所述阳极可以为透明阳极或反射阳极。
6. 如权利要求 5所述的双面显示的有机发光二极管阵列基板， 其特征在 于， 所述阳极为透明阳极时；
所述第一薄膜晶体管还包括： 第一遮光层， 位于所述第一源电极和所述 第一漏电极之间形成的沟道区域与所述第一有机发光二极管之间， 用于遮挡 所述第一有机发光二极管向所述第一源电极和所述第一漏电极之间形成的沟 道区域发射的光线；
所述第二薄膜晶体管还包括： 第二遮光层， 位于所述第二源电极和所述 第二漏电极之间形成的沟道区域与所述第二有机发光二极管之间， 用于遮挡 所述第二有机发光二极管向所述第二源电极和所述第二漏电极之间形成的沟 道区域发射的光线。
7. 如权利要求 6所述的双面显示的有机发光二极管阵列基板， 其特征在 于， 还包括：
设置于所述第一有机发光二极管和所述第一薄膜晶体管之间的： 第一绝 缘层、 第一数据线、 第一栅线及第一保护层， 其中， 所述第一数据线分别与 所述第一有机发光二极管的阳极及所述第一薄膜晶体管的漏电极连接， 所述 第一櫥线与所述»电极连接；
设置于所述第二有机发光二极管和所述第二薄膜晶体管之间的： 第二绝 缘层、 第二数据线、 第二栅线及第二保护层， 其中， 所述第二数据线分别与 所述第二有机发光二极管的阳极及所述第二薄膜晶体管的漏电极连接， 所述 第二栅线与所述 »电极连接。
8. 如权利要求 2所述的双面显示的有机发光二极管阵列基板， 其特征在 于， 所述第一有源层和所述第二有源层为氧化物半导体材料或多晶硅材料制 成。
9. 一种显示装置， 其特征在于， 包括如权利要求 1至 8中任一项所述的 双面显示的有机发光二极管阵列基板。
10. 一种双面显示的有机发光二极管阵列基板的制备方法， 其特征在于， 包括以下步骤：
在第一衬底基板上形成第一有机发光二极管；
在所述第一有机发光二极管上形成共 同一栅电极的第一薄膜晶体管和 第二薄膜晶体管；
在所述第二薄膜晶体管上形成第二有机发光二极管， 并在所述第二有机 发光二极管上设置第二衬底基板；
其中， 所述第一薄膜晶体管用于驱动所述第一有机发光二极管， 所述第 二薄膜晶体管用于驱动所述第二有机发光二级管。
1 1. 如权利要求 10所述的制备方法， 其特征在于， 所述在第一衬底基板 上形成第一有机发光二极管的步骤具体包括：
在所述第一衬底基板上制备所述第一有机发光二极管的阴极；
在所述第一有机发光二极管的阴极上制备所述第一有机发光二极管的发 光层；
在所述第一有机发光二极管的发光层上制备所述第一有机发光二极管的
12. 如权利要求 10或 11 所述的制备方法， 其特征在于， 所述在所述第 一有机发光二极管上形成共 ^同一 »电极的第一薄膜晶体管和第二薄膜晶体 管的步骤具体包括：
在所述第一有机发光二极管上形成第一源电极和第一漏电极；
在所述第一源电极和所述第一漏电极上形成第一有源层；
在所述第一有源层上形成第一栅绝缘层；
在所述第一栅绝缘层上形成栅电极；
在所述栅电极上形成第二栅绝缘层；
在所述第二栅绝缘层上形成第二有源层；
在所述第二有源层上形成第二源电极和第二漏电极。
13. 如权利要求 10或 U所述的制备方法， 其特征在于， 所述在所述第 一有机发光二极管上形成共) ¾同一»电极的第一薄膜晶体管和第二薄膜晶体 管的步骤具体包括：
在所述第一有机发光二极管上形成第一源电极和第一漏电极；
在所述第一源电极和第一漏电极上形成第一遮光层， 其中， 所述第一遮 光层位于所述第一源电极和所述第一漏电极之间形成的沟道区域与所述第一 有机发光二极管之间， 用于遮挡所述第一有机发光二极管向所述第一源电极 和所述第一漏电极之间形成的沟道区域发射的光线；
在所述第一遮光层上形成第一有源层；
在所述第一有源层上形成第一栅绝缘层；
在所述第一栅绝缘层上形成栅电极；
在所述栅电极上形成第二櫥绝缘层； 在所述第二 »绝缘层上形成第二有源层；
在所述第二有源层上形成第二遮光层；
在所述第二遮光层上形成第二源电极和第二漏电极， 其中， 所述第二遮 光层位于所述第二源电极和所述第二漏电极之间形成的沟道区域与所述第二 有机发光二极管之间， 用于遮挡所述第二有机发光二极管向所述第二源电极 和所述第二漏电极之间形成的沟道区域发射的光线。
14. 如权利要求】 0所述的制备方法， 其特征在于， 所述在所述第二薄膜 晶体管上形成第二有机发光二极管， 并在所述第二有机发光二极管上设置第 二衬底基板的步骤具体包括：
在所述第二薄膜晶体管上制备第二有机发光二极管的阳极；
在所述第二有机发光二极管的阳极上制备所述第二有机发光二极管的发 光层；
在所述第二有机发光二极管的发光层上制备所述第二有机发光二极管的 阴极；
在所述第二有机发光二极管的阴极上设置第二衬底基板。
15. 如权利要求 10所述的制备方法， 其特征在于，
在所述在第一衬底基板上形成第一有机发光二极管之后， 在所述第一有 机发光二极管上形成共用同一栅电极的第一薄膜晶体管和第二薄膜晶体管之 前还包括： 在所述第一有机发光二极管与所述第一薄膜晶体管之间第一绝缘 层、 第一数据线、 第一栅线及第一保护层， 其中， 所述第一数据线分别与所 述第一有机发光二极管的阳极及所述第一薄膜晶体管的漏电极连接， 所述第 一栅线与所述栅电极连接；
在所述第一有机发光二极管上形成共) ¾同一»电极的第一薄膜晶体管和 第二薄膜晶体管之后， 在所述第二薄膜晶体管上形成第二有机发光二极管之 前还包括： 在所述第二有机发光二极管与所述第二薄膜晶体管之间第二绝缘 层、 第二数据线、 第二栅线及第二保护层， 其中， 所述第二数据线分别与所 述第二有机发光二极管的阳极及所述第二薄膜晶体管的漏电极连接， 所述第
~ J i ¾U「 、
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CN103730485A (zh) * 2013-12-27 2014-04-16 京东方科技集团股份有限公司 双面显示的oled阵列基板及其制备方法、显示装置

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US20160300895A1 (en) * 2015-04-08 2016-10-13 Samsung Display Co., Ltd. Display device
US9660005B2 (en) * 2015-04-08 2017-05-23 Samsung Display Co., Ltd. Display device
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CN112817471A (zh) * 2019-11-18 2021-05-18 北京小米移动软件有限公司 柔性屏、终端设备及柔性屏的制造方法

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