WO2021120112A1 - 双面tft面板及其制作方法、显示设备 - Google Patents

双面tft面板及其制作方法、显示设备 Download PDF

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Publication number
WO2021120112A1
WO2021120112A1 PCT/CN2019/126674 CN2019126674W WO2021120112A1 WO 2021120112 A1 WO2021120112 A1 WO 2021120112A1 CN 2019126674 W CN2019126674 W CN 2019126674W WO 2021120112 A1 WO2021120112 A1 WO 2021120112A1
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Prior art keywords
double
tft panel
sided
tft
panel
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PCT/CN2019/126674
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English (en)
French (fr)
Inventor
陈柏辅
王英琪
曹江
Original Assignee
重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2019/126674 priority Critical patent/WO2021120112A1/zh
Priority to CN201980004193.9A priority patent/CN113366645A/zh
Priority to KR1020217011876A priority patent/KR102420936B1/ko
Priority to US17/235,696 priority patent/US20210242248A1/en
Publication of WO2021120112A1 publication Critical patent/WO2021120112A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to the field of display technology, in particular to a double-sided TFT panel, a manufacturing method thereof, and a display device.
  • LCD liquid crystal displays
  • OLED Organic Light Flat panel display technologies such as Emitting Diode
  • CRT CRT displays
  • OLED displays have many advantages such as self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide operating temperature range, and can realize flexible display and large-area full-color display. It is recognized by the industry as the most promising display device.
  • Existing flexible OLED displays generally include flexible TFT (Thin Film Transistor Array Substrate (thin film transistor) panels and OLED devices arranged on flexible TFT panels.
  • flexible TFT Thin Film Transistor Array Substrate (thin film transistor) panels and OLED devices arranged on flexible TFT panels.
  • the technical solution of the present invention is:
  • an embodiment of the present invention provides a method for manufacturing a double-sided TFT panel.
  • the manufacturing method includes: providing two substrates, respectively growing a TFT panel on the two substrates; attaching a supporting film to the side away from the substrate corresponding to each TFT panel; and peeling off the substrate corresponding to each TFT panel ;
  • the two TFT panels are peeled off one side of the substrate and pasted together to produce a double-sided TFT panel; a conductive hole is opened on the double-sided TFT panel to connect the electrodes on the two TFT panels.
  • an embodiment of the present invention provides a double-sided TFT panel.
  • the double-sided TFT panel includes: two TFT panels, one side of the two TFT panels is pasted together to generate a double-sided TFT panel; A driving circuit that can be shared with another TFT panel is arranged in any of the TFT panels, and conductive holes are opened on the double-sided TFT panel to connect the electrodes on the double-sided TFT panel.
  • an embodiment of the present invention provides an electronic device.
  • the electronic device includes a housing and the above-mentioned double-sided TFT panel arranged in the housing.
  • the drive circuit can improve the space utilization of the double-sided TFT panel.
  • FIG. 1 is a schematic diagram of a method for manufacturing a double-sided TFT panel according to an embodiment of the present invention.
  • FIG. 2A is a schematic diagram of the first state of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2A-2B are schematic diagrams of the second state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2B-2C are schematic diagrams of the third state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2C-2D are schematic diagrams of the fourth state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2D-2E are schematic diagrams of the fifth state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2E-2F are schematic diagrams of the sixth state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2F-2G are schematic diagrams of the seventh state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • 2G-2H are schematic diagrams of the eighth state change of the double-sided TFT panel in the manufacturing process of the embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the double-sided TFT panel of the first embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a display device using the above-mentioned double-sided TFT panel in the first embodiment of the present invention.
  • FIG. 1 is a schematic diagram of the manufacturing method of the double-sided TFT panel 6 of the embodiment.
  • the manufacturing method includes the following steps.
  • Step S601 Two substrates 11 are provided, and a TFT panel 1 is grown on the two substrates 11 respectively.
  • the substrate 11 is a flexible base substrate 11, and the substrate 11 may be transparent or opaque. If the substrate 11 is set to be transparent, it can be made of glass material.
  • the glass material can be, but is not limited to, a glass material with SiO 2 as the main component.
  • the substrate 11 is a copper clad laminate, and the single- and double-sided printed boards are manufactured on the substrate 11 material-copper clad laminate, with selective hole processing, electroless copper plating, copper electroplating, and etching. Wait for processing to get the desired circuit pattern.
  • the manufacturing of another type of multilayer printed board is also based on the core thin copper clad laminate, the conductive pattern layer and the prepreg are alternately laminated and bonded together through one-time lamination, forming more than 3 layers of conductive pattern interlayer interconnection .
  • the substrate 11 has three functions of conduction, insulation and support. The performance, quality, processability in manufacturing, manufacturing cost, and manufacturing level of the printed board depend to a large extent on the material of the substrate 11.
  • the flexible substrate 11 can also be made of plastic transparent material, and the plastic glass material can be, but not limited to, polyethersulfone (pes), polyacrylate (par), polyetherimide ( pei), polyethylene naphthoate (pet), polyphenylene sulfide (pps), poly- ⁇ -acrylate, polyimide, polycarbonate (pc), cellulose triacetate (TAC), propylene acetate Acid cellulose (CAP) and so on.
  • the flexible base substrate 11 is set to be non-transparent, it can be made of a metal material.
  • the metal material may be, but is not limited to, copper, aluminum, and other flexible metal materials.
  • the TFT panel 1 includes: a driving circuit 12 formed on one side of the substrate 11, a bonding electrode 13, a flat layer 15, an insulating layer 16, and a buffer layer 100.
  • the buffer layer 100, the insulating layer 16 and the flat layer 15 are sequentially disposed on the substrate 11.
  • the driving circuit 12 is embedded in the insulating layer 16 and the flat layer 15.
  • the flat layer 15 covers the side of the driving circuit 12 away from the insulating layer 16, and the side of the flat layer 15 away from the insulating layer 16 forms a flat surface.
  • the driving circuit 12 includes a transistor TFT, a data line, a scan line, and the like.
  • the gate, source, and drain of the transistor TFT are made of main metal materials. And doped with conductive semiconductor materials.
  • the metal material can be, but is not limited to, copper, aluminum, tungsten, gold, silver, and the like.
  • the conductive semiconductor material may be, but is not limited to, polysilicon.
  • the driving circuit 12 may be, but is not limited to, a 2T1C circuit.
  • the flat layer 15 is made of an insulating material including but not limited to SiO 2 , Si3N 4 , HfO 2 , SiON, TiO 2 , TaO 3 , SnO 2 and the like.
  • the insulating layer 16 includes a gate insulating layer 16 and a non-gate insulating layer 16.
  • the insulating layer 16 is made of an inorganic material, and the inorganic material can be, but is not limited to, an oxidizing material (such as SiO 2 ), a nitrided material (SiN), or the like.
  • the buffer layer 100 is laid on the upper surface of the substrate 11 to planarize the substrate 11 and effectively prevent impurities or moisture from penetrating from the substrate 11.
  • the buffer layer 100 may be made of inorganic materials.
  • the inorganic material can be, but is not limited to, silicon oxide, silicon nitride, silicon oxide, aluminum oxide, aluminum nitride, titanium oxide, and the like.
  • the buffer layer 100 can also be made of organic materials.
  • the organic material can be, but is not limited to, polyimide, polyamide, or acrylic.
  • Step S602 A supporting film 14 is attached to the side away from the substrate 11 corresponding to each TFT panel 1 respectively.
  • the supporting membrane 14 can be, but not limited to, a polysulfone porous membrane.
  • the supporting membrane 14 can also be a supporting membrane 14 with other materials and supporting effects. Make a limit.
  • Step S603 the substrate 11 corresponding to each TFT panel 1 is peeled off.
  • the method of peeling off the substrate 11 may be but not limited to a laser method.
  • the method of peeling off the support film 14 is to heat the support film 14, so that the support film 14 is separated from both sides. TFT backplane 6; and the supporting film 14 is irradiated with ultraviolet rays, so that the supporting film 14 is separated from the double-sided TFT backplane 6.
  • it can also be a peeling method, and the peeling effect is the same as the aforementioned peeling effect.
  • Step S604 the two TFT panels 1 are peeled off one side of the substrate 11 and pasted together to produce a double-sided TFT panel 6.
  • the viscous insulating material 2 can be used to glue the two TFT panels 1 together on one side of the substrate 11 to produce a double-sided TFT panel 6.
  • the viscous insulating material 2 may be, but not limited to, a polyimide film. In some feasible embodiments, the viscous insulating material 2 may also be other insulating materials with adhesive properties.
  • Viscous insulating material 2 can be ethylene propylene rubber self-adhesive tape, ethylene propylene rubber and butyl rubber waterproof tape, silicone rubber tape, etc. Viscous insulating material 2 can be divided into high pressure rubber according to different functions Self-adhesive tape, low-pressure rubber self-adhesive tape, waterproof tape, semi-conductive tape, electrical stress control tape, arc-resistant silicone rubber tape, etc.
  • Step S605 A conductive hole 3 is opened on the double-sided TFT panel 6 to connect the electrodes on the two TFT panels 1.
  • the methods for opening conductive holes 3 include manual drilling and electric drill drilling. When a small number of conductive holes 3 are opened, manual drilling can be used, and when a large number of conductive holes 3 are needed, an electric drill can be used. hole.
  • the conductive hole 3 is filled with metal-plated or conductive glass material, and the conductive hole 3 connects the electrodes on the two TFT panels 1. If the conductive hole 3 is filled with a metal-plated material, the metal-plated material can be, but is not limited to, gold, silver, or copper. If the conductive hole 3 is filled with conductive glass material, the conductive glass is divided into volume conductive glass and surface conductive layer glass. The volume conductive glass contains alkaline oxides, silicon oxides, and titanium oxides.
  • Surface conductive layer glass is to vapor-deposit a metal film (such as gold, platinum, etc., with a thickness of less than 10 nanometers) on the transparent glass surface, or spray a metal oxide conductive film (such as tin, indium, etc.) on the heated glass surface ) And so on. Therefore, conductive glass is a glass with low resistance and conductivity.
  • a metal film such as gold, platinum, etc., with a thickness of less than 10 nanometers
  • a metal oxide conductive film such as tin, indium, etc.
  • Step S606 the support film 14 on the double-sided TFT panel 6 is peeled off.
  • the method of peeling the support film 14 may also be but not limited to a laser method.
  • the method of peeling the support film 14 includes heating the support film 14, so that the support film 14 is detached.
  • the double-sided TFT backplane 6; and the support film 14 is irradiated with ultraviolet rays, so that the support film 14 is separated from the double-sided TFT backplane 6.
  • it can also be a peeling method, and the peeling effect is the same as the aforementioned peeling effect.
  • Step S607 arranging the driving circuit 12 in any TFT panel 1 of the double-sided TFT panel 6 so that the other TFT panel 1 of the double-sided TFT panel 6 can share the driving circuit 12.
  • the driving circuit 12 when the driving circuit 12 is arranged on any TFT panel 1 in the double-sided TFT panel 6, the other TFT panel 1 in the double-sided TFT panel 6 can also be shared.
  • the signal lines and data lines on the driving circuit 12 can be distributed on the two TFT panels 1, thereby reducing the arrangement of signal lines and data lines in the non-display area, and further, can effectively reduce the frame of the non-display area.
  • Step S608 arranging light-emitting elements 4 on the bonding electrodes 13 on both sides of the double-sided TFT panel 6. As shown in Figure 2G- Figure 2H;
  • the light-emitting element 4 can be, but is not limited to, a micro-light-emitting diode, and the size of the micro-light-emitting diode is on the order of microns. Further, the size of the miniature light-emitting diode is less than 100 microns.
  • the miniature light-emitting diodes on the double-sided TFT panel 6 can emit light under the action of the driving circuit 12.
  • FIG. 3 is a schematic diagram of the double-sided TFT panel 6 of the first embodiment.
  • the double-sided TFT panel 6 includes two TFT panels 1, and one side of the two TFT panels 1 is pasted together to form a double-sided TFT panel 6.
  • Any TFT panel 1 of the double-sided TFT panel 6 is provided with a driving circuit 12 that can be shared with the other TFT panel 1, and a conductive hole 3 is opened on the double-sided TFT panel 6, and the conductive hole 3 connects the double-sided TFT panel 6.
  • the upper electrode is connected.
  • the double-sided TFT panel 6 has the effect of double-sided display.
  • the double-sided TFT panel 6 may be located in an electronic device. For example, mobile phones, computers and other electronic devices that contain LED displays.
  • the TFT panel 1 is made by low-temperature polysilicon technology.
  • the TFT panel 1 includes: a driving circuit 12 formed on one side of the substrate 11, a bonding electrode 13, a flat layer 15, an insulating layer 16, and a buffer layer 100.
  • the buffer layer 100, the insulating layer 16 and the flat layer 15 are sequentially disposed on the substrate 11.
  • the driving circuit 12 is embedded in the insulating layer 16 and the flat layer 15.
  • the flat layer 15 covers the side of the driving circuit 12 away from the insulating layer 16, and the side of the flat layer 15 away from the insulating layer 16 forms a flat surface.
  • the driving circuit 12 includes a transistor TFT, a data line, a scan line, and the like.
  • the gate, source, and drain of the transistor TFT are made of main metal materials. And doped with conductive semiconductor materials.
  • the metal material can be, but is not limited to, copper, aluminum, tungsten, gold, silver, and the like.
  • the conductive semiconductor material may be, but is not limited to, polysilicon.
  • the driving circuit 12 may be, but is not limited to, a 2T1C circuit.
  • the flat layer 15 is made of an insulating material including but not limited to SiO 2 , Si3N 4 , HfO 2 , SiON, TiO 2 , TaO 3 , SnO 2 and the like.
  • the insulating layer 16 includes a gate insulating layer 16 and a non-gate insulating layer 16.
  • the insulating layer 16 is made of an inorganic material, and the inorganic material can be, but is not limited to, an oxidizing material (such as SiO 2 ), a nitrided material (SiN), or the like.
  • the buffer layer 100 is laid on the upper surface of the substrate 11 to planarize the substrate 11 and effectively prevent impurities or moisture from penetrating from the substrate 11.
  • the buffer layer 100 may be made of inorganic materials.
  • the inorganic material can be, but is not limited to, silicon oxide, silicon nitride, silicon oxide, aluminum oxide, aluminum nitride, titanium oxide, and the like.
  • the buffer layer 100 can also be made of organic materials.
  • the organic material can be, but is not limited to, polyimide, polyamide, or acrylic.
  • Any TFT panel 1 in the double-sided TFT panel 6 is provided with a driving circuit 12 that can be shared with the other TFT panel 1.
  • the signal lines and data lines of the driving circuit 12 can be distributed on the two TFT panels 1, thereby reducing the signal lines and data lines arranged in the non-display area. Further, the non-display area can be effectively reduced.
  • Conductive holes 3 are opened on the double-sided TFT panel 6, and the conductive holes 3 connect the electrodes on the double-sided TFT panel 6. There are manual drilling and electric drill drilling for opening conductive holes 3. When a small number of conductive holes 3 are opened, manual drilling can be used, and when a large number of conductive holes 3 are needed, an electric drill can be used for drilling.
  • the conductive hole 3 is filled with metal-plated or conductive glass material, and the conductive hole 3 connects the electrodes on the two TFT panels 1. If the conductive hole 3 is filled with a metal-plated material, the metal-plated material can be, but is not limited to, gold, silver, or copper. If the conductive hole 3 is filled with conductive glass material, the conductive glass is divided into volume conductive glass and surface conductive layer glass. The volume conductive glass contains alkaline oxides, silicon oxides, and titanium oxides.
  • Surface conductive layer glass is to vapor-deposit a metal film (such as gold, platinum, etc., with a thickness of less than 10 nanometers) on the transparent glass surface, or spray a metal oxide conductive film (such as tin, indium, etc.) on the heated glass surface ) And so on. Therefore, conductive glass is a glass with low resistance and conductivity.
  • a metal film such as gold, platinum, etc., with a thickness of less than 10 nanometers
  • a metal oxide conductive film such as tin, indium, etc.
  • the two TFT panels 1 are pasted together by a viscous insulating material 2.
  • the viscous insulating material 2 can be, but is not limited to, a polyimide film. In some feasible embodiments, the viscous insulating material 2 may also be other insulating materials with adhesive properties. Viscous insulating material 2 According to different materials, viscous insulating material 2 can be ethylene propylene rubber self-adhesive tape, ethylene propylene rubber and butyl rubber waterproof tape, silicone rubber tape, etc.
  • Viscous insulating material 2 can be divided into high pressure rubber according to different functions Self-adhesive tape, low-pressure rubber self-adhesive tape, waterproof tape, semi-conductive tape, electrical stress control tape, arc-resistant silicone rubber tape, etc.
  • light-emitting elements 4 are provided on the bonding electrodes 13 on both sides of the double-sided TFT panel 6.
  • the light-emitting element 4 may be, but is not limited to, a micro-light-emitting diode, and the size of the micro-light-emitting diode is on the order of micrometers. Further, the size of the miniature light-emitting diode is less than 100 microns.
  • the miniature light-emitting diodes on the double-sided TFT panel 6 can emit light under the action of the driving circuit 12.
  • FIG. 4 is a schematic diagram of a display device 5 using the above-mentioned double-sided TFT panel 6 according to the first embodiment.
  • the display device 5 includes a double-sided TFT panel 6 and a housing 51 to which the double-sided TFT panel 6 is fixed. Understandably, the display device 5 has a display function.
  • the display device 5 includes, but is not limited to, a monitor, a television, a computer, a notebook computer, a tablet computer, a wearable device, and the like.

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Abstract

一种双面TFT面板（6）制作方法、双面TFT面板（6）以及应用该双面TFT面板（6）的显示设备，该制作方法包括：提供两个基板（11），在两个基板（11）上分别生长出一TFT面板（1）；分别在远离每一所述TFT面板（1）对应的基板（11）的一侧贴设有支撑膜（14）；将每一TFT面板（1）对应的基板（11）剥离；将两个TFT面板（1）剥离基板（11）的一侧粘贴在一起，生成双面TFT面板（6）；在双面TFT面板（6）上开设有导电孔（3）以将两个TFT面板（1）上的电极连通，从而能够提高双面TFT面板（6）的空间利用率。

Description

双面TFT面板及其制作方法、显示设备 技术领域
本发明涉及显示技术领域，尤其涉及一种双面TFT面板及其制作方法、显示设备。
 背景技术
在显示技术领域，液晶显示器(Liquid Crystal Display，LCD)与有机发光二极管显示器(Organic Light Emitting Diode，OLED)等平板显示技术已经逐步取代CRT显示器。其中，OLED显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
现有的柔性OLED显示器一般包括柔性TFT(Thin Film Transistor Array Substrate，薄膜晶体管)面板以及设于柔性TFT面板上的OLED器件。
在现有技术中，由于低温多晶硅技术（Low Temperature Poly-silicon，LTPS）面板皆为单面制作，柔性TFT面板上的信号线和驱动只能布局于柔性TFT面板的一面，当产品分辨率越来越高时，走线密度也会越来越密，在布局信号线和驱动时，柔性TFT面板没有足够的空间布局。
 技术问题
有鉴于此，有必要提供一种双面TFT面板及其制作方法、显示设备，能够提高双面TFT面板的空间利用率。
 技术解决方案
为解决上述技术问题，本发明的技术方案为：
第一方面，本发明实施例提供一种双面TFT面板制作方法。该制作方法包括：提供两个基板，在两个基板上分别生长出一TFT面板；分别在远离每一TFT面板对应的基板的一侧贴设有支撑膜；将每一TFT面板对应的基板剥离；将两个TFT面板剥离基板的一侧粘贴在一起，生成双面TFT面板；在双面TFT面板上开设有导电孔以将两个TFT面板上的电极连通。
第二方面，本发明实施例提供一种双面TFT面板，该双面TFT面板包括：两个TFT面板，两个TFT面板的一侧粘贴在一起，生成双面TFT面板；双面TFT面板中的任一TFT面板中布设有与另一TFT面板可以共用的驱动电路，双面TFT面板上开设有导电孔以将双面TFT面板上的电极连通。
第三方面，本发明实施例提供一种电子设备。该电子设备包括：外壳以及设置于外壳内的上述双面TFT面板。
 有益效果
上述双面TFT面板及其制作方法、显示设备，两个TFT面板的一侧粘贴在一起，生成双面TFT面板；双面TFT面板中的任一TFT面板中布设有与另一TFT面板可以共用的驱动电路，从而能够提高双面TFT面板的空间利用率。
 附图说明
下面将通过参照附图详细描述本发明的示例性实施例，使本领域的普通技术人员更清楚本发明的上述特征和优点，附图中：
图1为本发明实施例双面TFT面板制作方法示意图。
图2A为本发明实施例双面TFT面板在制作过程中的第一状态示意图。
图2A-图2B为本发明实施例双面TFT面板在制作过程中的第二状态变化示意图。
图2B-图2C为本发明实施例双面TFT面板在制作过程中的第三状态变化示意图。
图2C-图2D为本发明实施例双面TFT面板在制作过程中的第四状态变化示意图。
图2D-图2E为本发明实施例双面TFT面板在制作过程中的第五状态变化示意图。
图2E-图2F为本发明实施例双面TFT面板在制作过程中的第六状态变化示意图。
图2F-图2G为本发明实施例双面TFT面板在制作过程中的第七状态变化示意图。
图2G-图2H为本发明实施例双面TFT面板在制作过程中的第八状态变化示意图。
图3为本发明中第一实施例的双面TFT面板的示意图。
图4为本发明中第一实施例应用上述双面TFT面板的显示设备示意图。
 本发明的最佳实施方式
为使得对本发明的内容有更清楚及更准确的理解，现将结合幅图详细说明。说明书附图示出本发明的实施例的示例，其中，相同的标号表示相同的元件。可以理解的是，说明书附图示出的比例并非本发明实际实施的比例，其仅为示意说明为目的，并非依照原尺寸作图。
请参看图1，其为实施例的双面TFT面板6制作方法示意图。该制作方法包括以下步骤。
步骤S601：提供两个基板11，在两个基板11上分别生长出一TFT面板1。如图2A所示，在本实施例中，基板11为柔性衬底基板11，基板11可以是透明的也可以是不透明的。若基板11设置为透明时，可以采用玻璃材料制成。玻璃材料可以为但不限于以SiO 2为主要成分的玻璃材料。
具体地，基板11为覆铜箔层压板，单、双面印制板在制造中是在基板11材料-覆铜箔层压板上，有选择地进行孔加工、化学镀铜、电镀铜、蚀刻等加工，得到所需电路图形。另一类多层印制板的制造，也是以内芯薄型覆铜箔板为底基，将导电图形层与半固化片交替地经一次性层压黏合在一起，形成3层以上导电图形层间互连。基板11具有导电、绝缘和支撑三个方面的功能。印制板的性能、质量、制造中的加工性、制造成本、制造水平等，在很大程度上取决于基板11材料。
在一些可行的实施例中，柔性衬底基板11还可以采用塑胶透明材料制成，塑胶玻璃材料可以为但不限于聚醚砜（pes）、聚丙烯酸酯（par）、聚醚酰亚胺（pei）、聚萘甲酸乙二醇酯（pet）、聚苯硫醚（pps）、聚α-丙烯酸酯、聚酰亚胺、聚碳酸酯(pc)、三醋酸纤维素（TAC)、乙酸丙酸纤维素（CAP)等。若柔性衬底基板11设置为非透明时，可以采用金属材料制成。具体地，金属材料可以为但不限于铜、铝等具有具有柔性的金属材料。
举例来说，以低温多晶硅技术制作的TFT面板1为例，TFT面板1包括：形成于基板11一侧的驱动电路12、键合电极13、平坦层15、绝缘层16、以及缓冲层100。其中，缓冲层100、绝缘层16、平坦层15依次设置于基板11上。驱动电路12镶嵌于绝缘层16与平坦层15中。平坦层15覆盖驱动电路12远离绝缘层16的一侧，且平坦层15背离绝缘层16的一侧形成平整的表面。
可选地，驱动电路12包括晶体管TFT、数据线、扫描线等。晶体管TFT的栅极、源极、漏极由主要金属材料制成。以及掺杂有导电半导体材料。金属材料可以为但不限于铜、铝、钨、金、银等。导电半导体材料可以为但不限于多晶硅。具体地，驱动电路12可以为但不限定于2T1C电路。
平坦层15由绝缘材料制成，该绝缘材料包括但不限于SiO 2、Si3N 4、HfO 2、SiON、TiO 2、TaO 3、SnO 2等。
绝缘层16包括栅极绝缘层16和非栅极绝缘层16。绝缘层16采用无机材料制成，无机材料可以为但不限于氧化材料（如SiO 2）、氮化材料（SiN）等。
缓冲层100铺设于基板11的上表面用于使基板11平坦化，且有效地防止杂质或者水分从基板11渗透。缓冲层100可以采用无机材料制成。无机材料可以为但不限于氧化硅、氮化硅、氧化硅、氧化铝、氮化铝、氧化钛等。缓冲层100也可以采用有机材料制成。有机材料可以为但不限于聚酰亚胺、聚酰或丙烯等。
步骤S602：分别在远离每一TFT面板1对应的基板11的一侧贴设有支撑膜14。如图2A-图2B所示，支撑膜14可以为但不限于聚砜多孔膜，在一些可行的实施例中，支撑膜14也可以为其他材质且具有支撑效果的支撑膜14，在此不做限定。
步骤S603：将每一TFT面板1对应的基板11剥离。如图2B-图2C所示，剥离基板11的方式可以为但不限于镭射方式，在一些可行的实施例中，剥离支撑膜14的方式还有加热支撑膜14,使得支撑膜14脱离双面TFT背板6；以及紫外线照射支撑膜14，使得支撑膜14脱离双面TFT背板6。当然，还可以为剥离方式，且剥离效果与上述剥离效果相同。
步骤S604：将两个TFT面板1剥离基板11的一侧粘贴在一起，生成双面TFT面板6。如图2C-图2D所示，在本实施例中，可以利用粘性绝缘材料2将两个TFT面板1剥离基板11的一侧粘贴在一起，生成双面TFT面板6。具体地，粘性绝缘材料2可以为但不限于聚酰亚胺薄膜，在一些可行的实施例中，粘性绝缘材料2也可以为其他具有粘结性的绝缘材料。粘性绝缘材料2根据材料的不同，粘性绝缘材料2可以为乙丙橡胶自粘带、乙丙橡胶与丁基橡胶防水带、硅橡胶带等，粘性绝缘材料2根据功能不同，可分为高压橡胶自粘带、低压橡胶自粘带、防水胶带、半导电胶带、电应力控制带、抗电弧硅橡胶带等。
步骤S605：在双面TFT面板6上开设有导电孔3以将两个TFT面板1上的电极连通。如图2D-图2E所示，开设导电孔3的方式有手工打孔和电钻打孔，当开设少量导电孔3时，可以使用手工打孔，当需要大量导电孔3时，可以使用电钻打孔。
导电孔3内填充有镀金属或导电玻璃材料，导电孔3将两个TFT面板1上的电极连通。若导电孔3内填充的是镀金属材料时，镀金属材料可以采用但不限于金、银、铜。若导电孔3内填充的是导电玻璃材料时，导电玻璃分为体积导电玻璃和表面导电层玻璃两种。体积导电玻璃的成分中含有碱性氧化物、氧化硅、钛的氧化物。表面导电层玻璃是在透明的玻璃表面上蒸镀一层金属薄膜（如金、铂等，厚度小于10毫微米），或在加热的玻璃表面上喷涂金属氧化物导电薄膜（如锡、铟等）等制成。从而导电玻璃是一种电阻小、能导电的玻璃。
步骤S606：将双面TFT面板6上的支撑膜14剥离。如图2E-图2F所示，剥离支撑膜14的方式也可以为但不限于镭射方式，在一些可行的实施例中，剥离支撑膜14的方式还有加热支撑膜14,使得支撑膜14脱离双面TFT背板6；以及紫外线照射支撑膜14，使得支撑膜14脱离双面TFT背板6。当然，还可以为剥离方式，且剥离效果与上述剥离效果相同。
步骤S607：将驱动电路12布设于双面TFT面板6中的任一TFT面板1中，以使双面TFT面板6中的另一TFT面板1可以共用驱动电路12。如图2F-图2G所示，在本实施例中，当驱动电路12布设于双面TFT面板6中的任一TFT面板1时，双面TFT面板6中的另一TFT面板1也可以共用驱动电路12。驱动电路12上的信号线和数据线可以分布于两个TFT面板1上，从而减少在非显示区域处布置信号线和数据线，进一步地，可以有效的减小非显示区域的边框。
步骤S608：在双面TFT面板6的两侧上的键合电极13上设置发光元件4。如图2G-图2H所示；
在本实施例中，发光元件4可以为但不限定于微型发光二极管，微型发光二极管的尺寸为微米级别。进一步地，微型发光二极管的尺寸小于100微米。双面TFT面板6上的微型发光二极管可以在驱动电路12的作用下发光。
请参看图3，其为第一实施例的双面TFT面板6示意图。双面TFT面板6包括：两个TFT面板1，且两个TFT面板1的一侧粘贴在一起，生成双面TFT面板6。双面TFT面板6中的任一TFT面板1中布设有与另一TFT面板1可以共用的驱动电路12，双面TFT面板6上开设有导电孔3，且导电孔3将双面TFT面板6上的电极连通。双面TFT面板6具有双面显示的效果，在本实施例中，双面TFT面板6可以位于电子设备中。例如，手机，电脑以及其他包含LED显示屏的电子设备。
在本实施例中，TFT面板1为低温多晶硅技术制作，TFT面板1包括：形成于基板11一侧的驱动电路12、键合电极13、平坦层15、绝缘层16、以及缓冲层100。其中，缓冲层100、绝缘层16、平坦层15依次设置于基板11上。驱动电路12镶嵌于绝缘层16与平坦层15中。平坦层15覆盖驱动电路12远离绝缘层16的一侧，且平坦层15背离绝缘层16的一侧形成平整的表面。
可选地，驱动电路12包括晶体管TFT、数据线、扫描线等。晶体管TFT的栅极、源极、漏极由主要金属材料制成。以及掺杂有导电半导体材料。金属材料可以为但不限于铜、铝、钨、金、银等。导电半导体材料可以为但不限于多晶硅。具体地，驱动电路12可以为但不限定于2T1C电路。
平坦层15由绝缘材料制成，该绝缘材料包括但不限于SiO 2、Si3N 4、HfO 2、SiON、TiO 2、TaO 3、SnO 2等。
绝缘层16包括栅极绝缘层16和非栅极绝缘层16。绝缘层16采用无机材料制成，无机材料可以为但不限于氧化材料（如SiO 2）、氮化材料（SiN）等。
缓冲层100铺设于基板11的上表面用于使基板11平坦化，且有效地防止杂质或者水分从基板11渗透。缓冲层100可以采用无机材料制成。无机材料可以为但不限于氧化硅、氮化硅、氧化硅、氧化铝、氮化铝、氧化钛等。缓冲层100也可以采用有机材料制成。有机材料可以为但不限于聚酰亚胺、聚酰或丙烯等。
两个TFT面板1的一侧粘贴在一起。双面TFT面板6中的任一TFT面板1中布设有与另一TFT面板1可以共用的驱动电路12。同时，驱动电路12的信号线和数据线可以分布于两个TFT面板1上，从而减少非显示区域处布置的信号线和数据线。进一步地，可以有效的减小非显示区域。
双面TFT面板6上开设有导电孔3，且导电孔3将双面TFT面板6上的电极连通。开设导电孔3的方式有手工打孔和电钻打孔，当开设少量导电孔3时，可以使用手工打孔，当需要大量导电孔3时，可以使用电钻打孔。
导电孔3内填充有镀金属或导电玻璃材料，导电孔3将两个TFT面板1上的电极连通。若导电孔3内填充的是镀金属材料时，镀金属材料可以采用但不限于金、银、铜。若导电孔3内填充的是导电玻璃材料时，导电玻璃分为体积导电玻璃和表面导电层玻璃两种。体积导电玻璃的成分中含有碱性氧化物、氧化硅、钛的氧化物。表面导电层玻璃是在透明的玻璃表面上蒸镀一层金属薄膜（如金、铂等，厚度小于10毫微米），或在加热的玻璃表面上喷涂金属氧化物导电薄膜（如锡、铟等）等制成。从而导电玻璃是一种电阻小、能导电的玻璃。
两个TFT面板1通过粘性绝缘材料2粘贴在一起。粘性绝缘材料2可以为但不限定于聚酰亚胺薄膜。在一些可行的实施例中，粘性绝缘材料2也可以为其他具有粘结性的绝缘材料。粘性绝缘材料2根据材料的不同，粘性绝缘材料2可以为乙丙橡胶自粘带、乙丙橡胶与丁基橡胶防水带、硅橡胶带等，粘性绝缘材料2根据功能不同，可分为高压橡胶自粘带、低压橡胶自粘带、防水胶带、半导电胶带、电应力控制带、抗电弧硅橡胶带等。
在本实施例中，双面TFT面板6的两侧上的键合电极13上设置有发光元件4。发光元件4可以为但不限定于微型发光二极管，微型发光二极管的尺寸为微米级别。进一步地，微型发光二极管的尺寸小于100微米。双面TFT面板6上的微型发光二极管可以在驱动电路12的作用下发光。
请参看图4，其为第一实施例的应用上述双面TFT面板6的显示设备5示意图。显示设备5包括双面TFT面板6以及固定双面TFT面板6的外壳51。可以理解地，显示设备5具有显示功能。其中，显示设备5包括但不限于显示器、电视机、计算机、笔记本电脑、平板电脑、穿戴式设备等。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘且本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。
以上所列举的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (1)

  1. 一种双面TFT面板制作方法，其特征在于，包括：
    提供两个基板，在两个所述基板上分别生长出一TFT面板；
    分别在远离每一所述TFT面板对应的所述基板的一侧贴设有支撑膜；
    将每一所述TFT面板对应的所述基板剥离；
    将两个所述TFT面板剥离所述基板的一侧粘贴在一起，生成所述双面TFT面板；
    在所述双面TFT面板上开设有导电孔以将两个所述TFT面板上的电极连通。
    2.如权利要求1所述的双面TFT面板制作方法，其特征在于：所述方法还包括：
    将所述双面TFT面板上的所述支撑膜剥离。
    3.如权利要求2所述的双面TFT面板制作方法，其特征在于：所述方法还包括：
    将驱动电路布设于所述双面TFT面板中的任一TFT面板中，以使所述双面TFT面板中的另一TFT面板可以共用所述驱动电路。
    4.如权利要求1所述的双面TFT面板制作方法，其特征在于：所述双面TFT面板制作方法还包括：
    在所述双面TFT面板的两侧上的键合电极上设置发光元件。
    5.如权利要求1所述的双面TFT面板制作方法，其特征在于：将每一所述TFT面板上的基板剥离包括：
    利用镭射方式剥离每一所述TFT面板上的所述基板。
    6.如权利要求1所述的双面TFT面板制作方法，其特征在于：所述将两个所述TFT面板剥离所述基板的一侧粘贴在一起，生成所述双面TFT面板，包括：
    利用粘性绝缘材料将两个所述TFT面板剥离所述基板的一侧粘贴在一起，生成所述双面TFT面板。
    7.如权利要求1所述的双面TFT面板制作方法，其特征在于：所述粘性绝缘材料为聚酰亚胺薄膜。
    8.如权利要求1所述的双面TFT面板制作方法，其特征在于：所述导电孔内填充有镀金属或导电玻璃材料。
    9.一种双面TFT面板，其特征在于，所述双面TFT面板包括：两个TFT面板，所述两个TFT面板的一侧粘贴在一起；所述双面TFT面板中的任一TFT面板中布设有与另一TFT面板可以共用的驱动电路，所述双面TFT面板上开设有导电孔以将所述双面TFT面板上的电极连通。
    10.一种显示设备，其特征在于，包括：外壳以及设置于外壳内的如权利要求9所述的双面TFT面板。
PCT/CN2019/126674 2019-12-19 2019-12-19 双面tft面板及其制作方法、显示设备 WO2021120112A1 (zh)

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