WO2018147147A1 - 部品実装システム、樹脂成形装置、樹脂載置装置、部品実装方法および樹脂成形方法 - Google Patents
部品実装システム、樹脂成形装置、樹脂載置装置、部品実装方法および樹脂成形方法 Download PDFInfo
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- WO2018147147A1 WO2018147147A1 PCT/JP2018/003308 JP2018003308W WO2018147147A1 WO 2018147147 A1 WO2018147147 A1 WO 2018147147A1 JP 2018003308 W JP2018003308 W JP 2018003308W WO 2018147147 A1 WO2018147147 A1 WO 2018147147A1
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- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0888—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
- B29L2031/3406—Components, e.g. resistors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7501—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
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- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/8113—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving monitoring, e.g. feedback loop
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
- H05K13/0408—Incorporating a pick-up tool
- H05K13/0409—Sucking devices
Definitions
- the present invention relates to a component mounting system, a resin molding device, a resin mounting device, a component mounting method, and a resin molding method.
- the present invention has been made in view of the above-described reasons, and provides a component mounting system, a resin molding device, a resin mounting device, a component mounting method, and a resin molding method in which the occurrence of defective products is suppressed. Objective.
- a component mounting system includes: A component mounting system for mounting components on a board, A component supply unit for supplying the component; A board holding unit for holding the board in a posture in which a mounting surface on which the component is mounted on the board faces vertically downward; A head for holding the component from below vertically; A head driving unit that mounts the component on the mounting surface of the substrate by moving the head holding the component vertically upward to bring the head close to the substrate holding unit.
- the resin molding apparatus viewed from another viewpoint is A resin molding apparatus that cures the resin placed on the mold in a state of pressing the mold against the substrate, A substrate holding portion for holding the substrate in a posture in which a forming surface forming a resin portion in the substrate faces vertically downward; A head for holding the mold from below vertically; A head that presses the mold from the vertically lower side of the substrate by moving the head vertically upward after making the head face the position where the resin portion is formed on the substrate. A drive unit; And a resin curing unit that cures the resin placed on the mold in a state where the mold is pressed against the substrate.
- the resin placing device viewed from another viewpoint is A resin placing device for placing resin on a mold, A chamber in which the mold is disposed; A vacuum source that increases the degree of vacuum in the chamber by evacuating the gas present in the chamber; A resin discharge part for discharging resin to the mold; In a state where the degree of vacuum in the chamber is increased by the vacuum source, after the resin is discharged to the mold by the resin discharge unit, the mold is heated when the periphery of the mold is placed in an atmospheric pressure environment. And a mold heating unit that raises the temperature of the resin placed on the mold.
- the component mounting method according to the present invention from another viewpoint is as follows: A component mounting method for mounting a component on a board, A component supply unit for supplying the component; A board holding step in which the board holding section holds the board in a posture in which a mounting surface on which the component is mounted on the board faces vertically downward; A component holding step in which the head holds the component from below vertically; A component mounting step of mounting the component on the mounting surface of the substrate by bringing the head and the substrate holding part closer to each other.
- the resin molding method according to the present invention from another viewpoint is as follows: A resin molding method for curing a resin placed on the mold in a state of pressing the mold against a substrate, A substrate holding step in which the substrate holding unit holds the substrate in a posture in which a forming surface forming a resin portion in the substrate faces vertically downward; A mold holding step in which the head holds the mold from below vertically; A mold pressing step in which the head driving unit opposes the head from the position where the resin portion of the substrate is formed and then brings the head and the substrate holding unit closer to press the mold from vertically below the substrate; A resin curing step of curing the resin placed on the mold in a state where the mold is pressed against the substrate.
- the substrate holding unit holds the substrate in a posture in which the mounting surface on which the component is mounted on the substrate faces vertically downward, and the head driving unit moves the head holding the component vertically upward
- the component is mounted on the mounting surface of the board by moving the head closer to the board holding portion.
- the substrate holding unit holds the substrate in a posture in which the formation surface on which the resin portion is formed on the substrate faces vertically downward.
- the head driving unit moves the head vertically upward at a pressing position opposite to the position where the resin portion is formed on the substrate, thereby pressing the mold close to the substrate holding unit.
- the resin curing unit cures the resin placed on the mold in a state where the mold is pressed against the resin unit. Thereby, the accumulation of particles on the formation surface on which the resin portion of the substrate is formed can be reduced, so that mixing of particles at the interface between the resin portion and the substrate can be suppressed.
- FIG. 1 is a schematic configuration diagram of a bonding apparatus according to a first embodiment.
- 6 is a diagram illustrating a positional relationship between an alignment mark of the chip according to the first embodiment and a hollow portion of the head.
- FIG. 3 is a schematic perspective view showing a part of the bonding portion according to the first embodiment.
- FIG. 4 is a cross-sectional arrow view of the bonding apparatus according to the first embodiment, taken along line AA in FIG. 3.
- 2 is a plan view of a stage according to Embodiment 1.
- FIG. 3 is a side view of the stage according to Embodiment 1.
- FIG. 3 is a schematic cross-sectional view of a chip holding unit according to Embodiment 1.
- FIG. 3 is a block diagram illustrating a control unit according to Embodiment 1.
- FIG. 4 is a sequence diagram showing an operation of the component mounting system according to the first embodiment.
- FIG. 4 is a schematic plan view showing a positional relationship among a head, a chip transport unit, and a chip transfer unit according to the first embodiment. It is the schematic block diagram which looked at the component mounting system which concerns on Embodiment 1 from the side.
- FIG. 4 is a schematic plan view showing a positional relationship among a head, a chip transport unit, and a chip transfer unit according to the first embodiment.
- FIG. 5 is a schematic configuration diagram of a resin molding apparatus according to Embodiment 2.
- FIG. 5 is a schematic configuration diagram of a part of a resin molding apparatus according to Embodiment 2.
- FIG. 6 is a block diagram illustrating a control unit according to Embodiment 2.
- FIG. 6 is a flowchart illustrating an example of a flow of a resin molding process executed by a resin molding apparatus according to Embodiment 2. It is a figure which shows a mode that resin is inject
- FIG. FIG. 6 is a diagram illustrating details of a head according to a second embodiment. It is a figure which shows a mode that the mold hold
- the chip mounting system is a device for mounting electronic components on a substrate.
- the electronic component is, for example, a semiconductor chip (hereinafter simply referred to as “chip”) supplied from a diced substrate.
- the chip mounting system after activation processing is performed on the surface of the substrate on which the chip is mounted and the joint surface of the electronic component, the chip is mounted on the substrate by bringing the chip into contact with the substrate and applying pressure and heating. .
- the chip mounting system 1 includes a chip supply device 10, a bonding device 30, a cover 50, a hydrophilic treatment device 60, a water cleaning unit 65, A transport device 70, a carry-in / out unit 80, and a control unit 90 are provided.
- the chip supply device 10 dices the substrate WC, takes out the chip CP from the diced substrate WC, and supplies the chip CP to the bonding device 30.
- the dicing is a process of cutting a substrate WC on which a plurality of electronic components are formed into chips by cutting in a vertical direction and a horizontal direction.
- the chip supply device 10 includes a chip supply unit (component supply unit) 11, a chip transfer unit 13, and a supply chip imaging unit 15.
- the chip supply unit 11 supplies the chip CP to the bonding apparatus 30.
- the chip supply unit 11 vertically lowers a chip holding unit (sheet holding unit) 112 that holds a dicing tape (sheet) TE to which a diced substrate (dicing substrate) WC is attached, and a chip CP that forms the substrate WC.
- a cutting mechanism 111 that cuts into Further, the chip supply unit 11 includes a tape holding unit driving unit 113 that drives the tape holding unit 112 in the XY direction or a direction that rotates around the Z axis.
- the tape holding unit 112 holds the substrate WC attached to the dicing tape TE in a posture in which the dicing tape TE is positioned on the vertical upper side (+ Z direction) side of the substrate WC.
- the tape holding unit 112 holds the dicing tape TE with the surface of the dicing tape TE to which the substrate WC is attached facing downward.
- the cutting mechanism 111 has a needle 111a, and as shown by an arrow AR2 in FIG. 2, the needle CP protrudes vertically downward ( ⁇ Z direction) from the vertical upper side (+ Z direction) of the dicing tape TE to vertically insert the tip CP. Chips are fed by pushing down (-Z direction). Then, each chip CP constituting the substrate WC attached to the dicing tape TE is protruded downward one by one by the needle 111 a of the chip supply unit 11 and transferred to the chip transfer unit 13.
- the tape holding unit driving unit 113 changes the position and posture of the substrate WC by driving the tape holding unit 112 in the XY direction or the direction rotating around the Z axis.
- the chip transfer unit 13 includes a chip reversing unit (component reversing unit) 131 that vertically flips the chip CP delivered from the chip supply unit 11, and a chip that delivers the chip CP received from the chip reversing unit 131 to the chip transport unit 39.
- the chip inversion unit 131 inverts the chip CP supplied from the chip supply unit 11 upside down.
- the chip reversing unit 131 includes an L-shaped arm 1311 having a suction portion 1311a provided at the tip, and an arm driving unit 1312 that turns the arm 1311.
- the tip of the arm 1311 has a protrusion (not shown) that protrudes around the suction portion 1311a.
- the tip portion of the arm 1311 holds the upper surface side of the chip CP with the bonding surface CPf side bonded to the substrate WT in the chip CP facing vertically upward (+ Z direction). At the tip of the arm 1311, the tip CP is sucked and held by the sucking portion 1311 a with the tip of the protruding portion in contact with the peripheral portion of the chip CP.
- the chip delivery unit 132 receives the chip CP that is inverted upside down from the chip inversion unit 131 and delivers it to the chip transport unit 39. As shown by an arrow AR3 in FIG. 2, the chip delivery unit 132 has a suction portion 1311a at the tip (upper end) and moves in the vertical direction.
- the tip transfer portion 132 stands by at a standby position where the tip end portion is below the tip end portion of the arm 1311 with the tip end portion of the arm 1311 of the tip reversing portion 131 facing downward.
- the position of the chip transfer part 132 is a distance from the position of the suction part 1311a in a state where the suction part 1311a of the chip reversing part 131 faces vertically upward in a direction (X-axis direction) orthogonal to the vertical direction (Z-axis direction). It is shifted by W1. Depending on the dimensions of the substrate WT and the dicing substrate WC, the distance in the X-axis direction between the chip supply unit 11 and the head 33H can be moved by the chip reversing unit 131 and the chip transport unit 39 in the X-axis direction.
- the chip delivery unit 132 may be configured to move in the X-axis direction and deliver the chip CP to the tip of the plate 391 of the chip transport unit 39. Thereby, even if the diameter of the dicing substrate WC is long to some extent, it is possible to cope.
- the supply chip imaging unit 15 is disposed below ( ⁇ Z direction) the chip supply unit 11 in the chip supply device 10.
- the supply chip imaging unit 15 holds the substrate WC with the arm 1311 of the chip reversing unit 131 in the posture in which the suction unit 1311a faces the Z direction, that is, the suction unit 1311a does not exist on the optical axis of the supply chip imaging unit 15.
- the chip CP to be configured is photographed.
- the chip reversing unit 131 receives the tip CP of the tip supply unit 11 protruding from the tip 111 of the arm 1311 toward the tip supply unit 11 (upward) by the suction unit 1311a. Then, the tip reversing unit 131 turns the arm 1311 by the arm driving unit 1312 so that the tip of the arm 1311 faces downward while the tip CP is adsorbed to the tip of the arm 1311. On the other hand, the chip transfer unit 132 moves upward from the standby position and receives the chip CP adsorbed to the tip of the arm 1311. Further, the chip reversing unit 131 transfers the chip CP to the chip transfer unit 132 and then turns the arm 1311 so that the tip of the arm 1311 faces upward.
- the bonding apparatus 30 includes a stage (substrate holding unit) 31, a bonding unit 33 having a head 33H, a head driving unit 36 for driving the head 33H, first imaging units 35a and 35b, It has the 2nd imaging part 41, the camera F direction drive part 365, and the camera Z direction drive part 363.
- the bonding unit 33 and the head driving unit 36 constitute a so-called chip mounter that places the chip CP on the substrate WT.
- the bonding apparatus 30 further includes a chip transport unit (component transport unit) 39 that transports the chip CP supplied from the chip supply apparatus 10 to the head 33H. As shown in FIG.
- the bonding section 33 includes a Z-axis direction moving member 331, a first disk member 332, a piezo actuator (part orientation adjusting section) 333, a second disk member 334, and a mirror fixing member 336. And a mirror 337 and a head 33H.
- a first disk member 332 is fixed to the upper end portion of the Z-axis direction moving member 331.
- a second disk member 334 is disposed above the first disk member 332.
- the first disk member 332 and the second disk member 334 are connected via a piezo actuator 333.
- the head 33H is fixed to the upper surface side of the second disk member 334. The head 33H sucks and holds the chip CP.
- the head 33H holds the chip CP from vertically below ( ⁇ Z direction).
- the head 33 ⁇ / b> H has a chip tool 411 and a head main body 413.
- the chip tool 411 is formed of a material (for example, silicon (Si)) that transmits photographing light (infrared light or the like).
- the head main body 413 includes a ceramic heater, a coil heater, and the like.
- the head main body 413 is provided with hollow portions 415 and 416 for transmitting (passing) photographing light.
- Each of the hollow portions 415 and 416 is a transmission portion that transmits photographing light, and is provided so as to penetrate the head main body portion 413 in the vertical direction (Z-axis direction). Moreover, as shown in FIG.
- each hollow part 415,416 has an elliptical shape in top view.
- the two hollow portions 415 and 416 are arranged point-symmetrically about the axis BX in the diagonal portion of the head body portion 413 having a substantially square shape when viewed from above.
- holes 334 a and 334 b are also provided in portions corresponding to the hollow portions 415 and 416 in the second disk member 334 in order to transmit the photographing light.
- the piezo actuator 333 adjusts at least one of the distance between the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP and the inclination of the chip CP with respect to the mounting surface WTf of the substrate WT.
- three piezoelectric actuators 333 exist between the first disk member 332 and the second disk member 334, and can be expanded and contracted in the respective Z directions. Then, by controlling the degree of expansion / contraction of each of the three piezoelectric actuators 333, the inclination angle of the second disk member 334 and thus the head 33H with respect to the horizontal plane is adjusted.
- the three piezo actuators 333 are arranged at positions (planar positions) that do not block illumination light (including reflected light) related to the first imaging units 35a and 35b.
- the mirror 337 is fixed to the first disk member 332 via the mirror fixing member 336, and is disposed in the gap between the first disk member 332 and the second disk member 334.
- the mirror 337 has inclined surfaces 337a and 337b having an inclination angle of 45 degrees obliquely downward. Shooting light that has entered the inclined surfaces 337a and 337b of the mirror 337 from the first imaging units 35a and 35b is reflected upward.
- the head driving unit 36 moves the head 33H holding the chip CP received at the delivery position Pos1 (see FIG. 2) vertically upward (+ Z direction) to bring the head 33H closer to the stage 31 and mount the mounting surface WTf of the substrate WT.
- a chip CP is mounted on. More specifically, the head drive unit 36 moves the head 33H holding the chip CP vertically upward (+ Z direction) to bring the head 33H closer to the stage 31 and bring the chip CP into contact with the mounting surface WTf of the substrate WT. Then, the substrate is bonded to the substrate WT.
- the mounting surface WTf of the substrate WT and the bonding surface CPf bonded to the substrate WT in the chip CP are subjected to a hydrophilic treatment by, for example, a hydrophilic treatment device 60. Therefore, the chip CP is bonded to the substrate WT by bringing the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT.
- the bonding surface CPf of the chip CP may be a surface where a flat metal electrode is exposed, for example.
- the head driving unit 36 includes a Z direction driving unit 34, a rotating member 361, and a ⁇ direction driving unit 37.
- the Z direction drive unit 34 includes a servo motor and a ball screw.
- the Z-direction drive unit 34 is provided on the lower end side of a later-described rotating member 361, and drives the Z-axis direction moving member 331 of the bonding unit 33 in the Z-axis direction as indicated by an arrow AR4 in FIG.
- the Z-direction drive unit 34 moves the Z-axis direction moving member 331 in the Z direction
- the head 33H provided at the upper end of the bonding unit 33 moves in the Z direction accordingly. That is, the head 33 ⁇ / b> H is driven in the Z direction by the Z direction driving unit 34.
- Rotating member 361 has a cylindrical shape, and the inner hollow section has an octagonal cross section as shown in FIG. 5B.
- the Z-axis direction moving member 331 has a rod-like portion whose cross-sectional shape is an octagon, and is inserted inside the rotating member 361. Further, the Z-axis direction moving member 331 slides in the Z-axis direction with respect to the rotating member 361 between four of the eight side surfaces of the Z-axis direction moving member 331 and the inner surface of the rotating member 361.
- a linear guide 38 arranged in a moving manner is provided.
- the Z-axis direction moving member 331 rotates in conjunction with the rotating member 361 when the rotating member 361 rotates around the rotation axis BX. That is, the bonding part 33 and the rotating member 361 rotate in conjunction with the rotation axis BX as indicated by an arrow AR5 in FIG.
- the ⁇ -direction drive unit 37 has a servo motor, a speed reducer, and the like, and is fixed to a fixing member 301 provided in the bonding apparatus 30 as shown in FIG.
- the ⁇ -direction drive unit 37 supports the rotating member 361 so as to be rotatable around the axis BX.
- the ⁇ -direction drive unit 37 rotates the rotation member 361 around the rotation axis BX in accordance with a control signal input from the control unit 90.
- the first imaging units 35a and 35b are arranged in a state where the chip CP as shown in FIG. 4 is viewed from vertically below the chip CP ( ⁇ Z direction) in a state where the chip CP is disposed at the position where the chip CP is mounted on the substrate WT.
- the alignment marks (first alignment marks) MC1a and MC1b are imaged.
- the first imaging unit 35 a is fixed to the rotating member 361 via the camera Z direction driving unit 363 and the camera F direction driving unit 365.
- the first imaging unit 35b is also fixed to the rotating member 361 via the camera Z direction driving unit 363 and the camera F direction driving unit 365. Thereby, the first imaging units 35a and 35b rotate together with the rotating member 361.
- the mirror 337 is fixed to the Z-axis direction moving member 331, and the rotating member 361 and the Z-axis direction moving member 331 rotate in conjunction with each other. Accordingly, since the relative positional relationship between the first imaging units 35a and 35b and the mirror 337 is unchanged, the photographing light reflected by the mirror 337 is irrespective of the rotation operation of the rotating member 361. , 35b.
- the first imaging units 35a and 35b respectively acquire image data including images of alignment marks MC1a and MC1b described later provided on the chip CP and images of alignment marks MC2a and MC2b described later provided on the substrate WT. To do.
- the control unit 90 recognizes the relative position of each chip CP with respect to the substrate WT in the direction parallel to the surface on which the chip CP is mounted on the substrate WT, based on the image data acquired by the first imaging units 35a and 35b.
- the first imaging units 35a and 35b have image sensors 351a and 351b, optical systems 352a and 352b, and a coaxial illumination system (not shown), respectively.
- Each of the first imaging units 35a and 35b acquires image data related to reflected light of illumination light (for example, infrared light) emitted from a light source (not shown) of a coaxial illumination system.
- Illumination light emitted in the horizontal direction from the coaxial illumination system of the first imaging units 35a and 35b is reflected by the inclined surfaces 337a and 337b of the mirror 337, and the traveling direction thereof is changed vertically upward. Then, the light reflected by the mirror 337 travels toward the photographing target portion including the chip CP held by the head 33H and the substrate WT disposed to face the chip CP, and is reflected by each photographing target portion.
- alignment marks MC1a and MC1b described later are provided on the imaging target portion of the chip CP
- alignment marks MC2a and MC2b described later are provided on the imaging target portion of the substrate WT.
- Reflected light from the imaging target portions of the chip CP and the substrate WT travels vertically downward, and is then reflected again by the inclined surfaces 337a and 337b of the mirror 337, and the traveling direction thereof is changed to the horizontal direction. 35a and 35b are reached. In this manner, the first imaging units 35a and 35b acquire image data of the imaging target portions of the chip CP and the substrate WT.
- the hollow portions 415 and 416 of the head 33H rotate around the axis BX in conjunction with the rotation of the rotating member 361.
- alignment marks MC1a and MC1b are provided at corners facing each other across the center of a chip CP having a square shape.
- the first imaging units 35a and 35b are positioned on the diagonal line connecting the two corners provided with the alignment marks MC1a and MC1b of the chip CP, the first imaging units 35a and 35b are the hollow portions 415 and 416.
- the imaging data of the alignment marks MC1a and MC1b can be acquired through.
- the camera F direction driving unit 365 adjusts the focal positions of the first imaging units 35a and 35b by driving the first imaging units 35a and 35b in the focus direction, as indicated by an arrow AR8 in FIG.
- the camera Z direction driving unit 363 drives the first imaging units 35a and 35b in the Z-axis direction as indicated by an arrow AR9 in FIG.
- the camera Z-direction drive unit 363 normally has the same amount of movement in the Z-axis direction of the Z-axis direction moving member 331 and the amount of movement of the first imaging units 35a and 35b in the Z-axis direction.
- the first imaging units 35a and 35b are moved. In this way, when the head 33H moves in the Z-axis direction, the imaging target portions of the first imaging units 35a and 35b are prevented from changing before and after the movement.
- the camera Z direction driving unit 363 includes the first imaging units 35a and 35b so that the movement amount of the first imaging units 35a and 35b in the Z axis direction is different from the movement amount of the Z axis direction moving member 331 in the Z axis direction. May be moved. In this case, since the relative positions in the Z direction of the first imaging units 35a and 35b and the mirror 337 change, the imaging target portions on the chip CP and the substrate WT by the first imaging units 35a and 35b are changed.
- the stage 31 holds the substrate WT such that the mounting surface WTf on which the chip CP is mounted on the substrate WT faces vertically downward ( ⁇ Z direction).
- the stage 31 can move in the X direction, the Y direction, and the rotation direction. Thereby, the relative positional relationship between the bonding part 33 and the stage 31 can be changed, and the mounting position of each chip CP on the substrate WT can be adjusted.
- the stage 31 includes an X direction moving unit 311, a Y direction moving unit 313, a substrate platform 315, an X direction driving unit 321, and a Y direction driving unit 323.
- the X direction moving unit 311 is fixed to the base member 302 of the bonding apparatus 30 via two X direction driving units 321.
- the two X-direction drive units 321 extend in the X direction and are spaced apart in the Y direction.
- the X direction driving unit 321 includes a linear motor and a slide rail, and moves the X direction moving unit 311 with respect to the fixed member 301 in the X direction.
- the Y direction moving unit 313 is disposed below the X direction moving unit 311 ( ⁇ Z direction) via two Y direction driving units 323.
- the two Y-direction drive units 323 extend in the Y direction and are spaced apart in the X direction.
- the Y direction driving unit 323 includes a linear motor and a slide rail, and moves the Y direction moving unit 313 with respect to the X direction moving unit 311 in the Y direction.
- the substrate platform 315 is fixed to the Y direction moving unit 313. The substrate platform 315 moves in the X direction and the Y direction according to the movement of the X direction driving unit 321 and the Y direction driving unit 323.
- an opening 312 having a rectangular shape in plan view is provided at the center of the X-direction moving unit 311, and an opening 314 having a rectangular shape in plan view is provided at the center of the Y-direction moving unit 313.
- An opening 316 having a circular shape in plan view is provided at the center of the substrate platform 315.
- the marks on the substrate WT are recognized by the infrared transmission camera 41 through these openings 312, 314 and 316. Further, by arranging an infrared irradiation unit (not shown), the substrate WT can be heated by irradiating the substrate WT with infrared rays.
- the chip transport unit (also referred to as a turret) 39 transports the chip CP supplied from the chip supply unit 11 to the delivery position Pos1 for delivering the chip CP to the head 33H.
- the chip transport unit 39 includes an even number (four in FIG. 1) of plates 391 and a plate driving unit 392 that rotates and drives a plurality of plates 391 all at once.
- each of the even number of plates 391 is provided with a chip holding part (component holding part) 391a for holding the chip CP at one end, and is located between the chip supply part 11 and the head 33H.
- One end portion pivots around the end portion (axis BX).
- Each plate 391 has a thin plate shape, and has a thickness of, for example, about several mm (preferably about 1 mm to 2 mm or less).
- the plurality of plates 391 are arranged at equal intervals around the axis AX in plan view. Note that the number of plates 391 is not limited to four, and may be an even number of six or more.
- a tip holding portion 391 a that sucks and holds the tip CP is provided at the tip of the plate 391.
- the chip transfer part 132 and the head 33H of the bonding part 33 are arranged in a position overlapping with the locus OB1 drawn by the chip holding part 391a when the plate 391 rotates in the Z-axis direction.
- the position of the chip transfer section 132 is shifted by a distance W1 from the position where the chip reversing section 131 receives the chip CP from the chip supply section 11 in the X-axis direction.
- the position where the chip transfer unit 132 receives the chip CP from the chip reversing unit 131 is shifted by the distance W1 on the axis AX side ( ⁇ X direction) from the position where the chip reversing unit 131 receives the chip CP from the chip supply unit 11. ing. Therefore, since the length of the plate 391 can be shortened by the length W1, the chip transport unit 39 can be downsized.
- the chip holding unit 391a of the chip transport unit 39 includes an adsorption portion 391b and a protruding portion 391c protruding around the adsorption portion 391b.
- the chip holding part 391a holds the upper surface side of the chip CP in a state where the bonding surface CPf side bonded to the substrate WT in the chip CP is directed vertically upward (+ Z direction).
- the chip CP has a rectangular parallelepiped shape, and has a notch CPk formed in the outer peripheral portion of the bonding surface CPf bonded to the substrate WT.
- the protrusion amount HT of the protrusion 391c of the chip holding part 391a is larger than the height HC in the direction (Z-axis direction) orthogonal to the joint surface CPf of the notch CPk.
- maintains chip
- the chip transport portion 39 is connected to the bonding surface of the chip CP.
- the chip CP can be transported in a state where the CPf is not in contact with the plate 391.
- the second imaging unit 41 is disposed above the stage 31 as shown in FIGS. Then, the second imaging unit 41 has an alignment mark (second alignment) (described below) of the substrate WT, which will be described later, from vertically above (+ Z direction) of the substrate WT in a state where the chip CP is disposed at the position where the chip CP is mounted on the substrate WT. Alignment marks) MC2a and MC2b are imaged. Thereby, the second imaging unit 41 acquires image data including images of the alignment marks MC2a and MC2b of the substrate WT.
- second alignment mark second alignment
- the controller 90 Based on the image data acquired by the second imaging unit 41, the controller 90 recognizes the relative position of the mounting position of the chip CP in the direction parallel to the surface on which the chip CP is mounted on the substrate WT with respect to the head 33H.
- the second imaging unit 41 includes an image sensor 418, an optical system 419, and a coaxial illumination system (not shown).
- the second imaging unit 41 acquires image data related to reflected light of illumination light (for example, infrared light) emitted from a light source (not shown) of the coaxial illumination system.
- the cover 50 is disposed in the chip supply device 10 and the bonding device 30 so as to partition a space in which the head driving unit 36 and the chip transport unit 39 are disposed and a space in which the chip supply unit 11 and the stage 31 are disposed. Has been. Thereby, accumulation of particles generated in the chip supply unit 11 or the stage 31 on the head driving unit 36 or the chip transport unit 39 is suppressed.
- the hydrophilic treatment device 60 performs a hydrophilic treatment for making the mounting surface of the substrate WT hydrophilic.
- the hydrophilization treatment apparatus 60 includes, for example, a chamber (not shown), a stage (not shown) that holds the substrate WT in the chamber, a magnetron (not shown) that generates a high frequency, and a high-frequency power source that applies a bias to the stage (not shown). (Not shown).
- the hydrophilization processing apparatus 60 has a vacuum pump (not shown) that is connected to the chamber and depressurizes the inside of the chamber.
- the hydrophilization treatment device 60 performs hydrophilic treatment to activate the mounting surface WTf of the substrate WT by performing reactive ion etching or irradiation of N2 or O2 radicals on the mounting surface WTf of the substrate WT held on the stage under reduced pressure. Execute the conversion process.
- the water cleaning unit 65 includes a water cleaning device such as a spin coater. Then, the water cleaning unit 65 performs a water cleaning process on the transported substrate WT, thereby removing particles adhering to the substrate WT and attaching water to the mounting surface WTf of the substrate WT.
- the transfer device 70 uses the transfer robot 71 to transfer the substrate WT among the carry-in / out unit 80, the bonding apparatus 30, and the hydrophilic treatment apparatus 60.
- the transport apparatus 70 first transports the substrate WT from the carry-in / out unit 80 into the hydrophilic treatment apparatus 60. Then, the transfer device 70 transfers the substrate WT subjected to the hydrophilic treatment in the hydrophilic treatment device 60 from the hydrophilic treatment device 60 into the bonding device 30.
- the transport robot 71 transports the substrate WT received from the hydrophilization processing device 60 into the bonding apparatus 30 after appropriately inverting the substrate WT.
- the hydrophilic treatment apparatus 60 also performs the hydrophilic treatment by arranging the bonding surface of the substrate WT vertically downward, and handles the bonding surface of the substrate WT so as to always face downward in the process. As a result, the adhesion of particles to the bonding surface of the substrate WT can be suppressed.
- a particle beam irradiation unit that activates the bonding surface of the substrate WT by irradiating the bonding surface of the substrate WT by irradiating the bonding surface of the substrate WT from the vertical lower side of the substrate WT is provided. It is effective to adopt the configuration described above.
- the structure provided with this particle beam irradiation part is suitable compared with the structure provided with a plasma source, for example.
- a plasma source for example, in the case of activating the hybrid substrate bonding surface exposed by mixing the insulating layer and the electrode on the bonding surface, it is assumed that the bonding surface of the substrate WC stretched on the dicing tape TE is activated.
- impurity ions generated from oxides contained in the insulating layer, resin forming the dicing tape TE, etc. are attracted by plasma electrolysis and re-applied to the bonding surfaces of the substrates WT and WC. It will stick.
- the impurities attached to the bonding surfaces of the substrates WT and WC are scattered by irradiating the particle beams to the bonding surfaces of the substrates WT and WC. Therefore, there is an advantage that the bonding surfaces of the substrates WT and WC can be activated without any spots.
- the control unit 90 includes an MPU (Micro Processing Unit) 901, a main storage unit 902, an auxiliary storage unit 903, an interface 904, and a bus 905 that connects the units.
- the main storage unit 902 includes a volatile memory and is used as a work area for the MPU 901.
- the auxiliary storage unit 903 includes a nonvolatile memory, and stores a program executed by the MPU 901.
- the auxiliary storage unit 903 also stores information indicating the rotation angle of the plate 391 of the chip transfer unit 39 described later.
- the interface 904 converts captured image signals input from the supply chip imaging unit 15, the first imaging units 35 a and 35 b, and the second imaging unit 41 into captured image information and outputs the captured image information to the bus 905.
- the MPU 901 reads the program stored in the auxiliary storage unit 903 into the main storage unit 902 and executes it, whereby the Z-direction drive unit 34, the ⁇ -direction drive unit 37, the piezo actuator 333, and the X-direction are connected via the interface 904.
- Control signals are output to the drive unit 321, the Y-direction drive unit 323, the plate drive unit 392, the suction unit 391b, the chip reversing unit 131, the chip transfer unit 132, the cutting mechanism 111, the tape holding unit drive unit 113, and the transport robot 71, respectively. To do.
- the controller 90 calculates a relative position error between the substrate WT and the chip CP from an image obtained by imaging the alignment marks MC1a, MC1b, MC2a, and MC2b in a state where the substrate WT and the chip CP are in contact with each other. Then, the control unit 90 transfers the substrate to the Z direction driving unit 34, the ⁇ direction driving unit 37 of the head driving unit 36, the X direction driving unit 321 and the Y direction driving unit 323 of the stage 31 according to the calculated relative position error. The position and posture of the chip CP with respect to the WT are corrected.
- control unit 90 causes the tape holding unit driving unit 113 to correct the position of the tape holding unit 112 and the inclination around the Z axis according to the position and posture of the chip CP passed to the chip reversing unit 131 on the substrate WC.
- control unit 90 recognizes the posture of the chip CP based on the image data input from the supply chip imaging unit 15 described above.
- This component mounting process is started when the control unit 90 starts a program for executing the component mounting process.
- the tape holding unit 112 of the chip supply unit 11 holds the dicing tape TE with the surface of the dicing tape TE to which the dicing substrate WC is attached facing downward.
- the surface side of each chip CP constituting the dicing substrate WC mounted on the substrate WT has already been subjected to a hydrophilic treatment in the hydrophilic treatment device 60 or another device.
- the stage 31 holds the substrate WT that has been hydrophilized in the hydrophilization apparatus 60 and has been transported into the bonding apparatus 30 by the transport apparatus 70.
- the stage 31 holds the substrate WT such that the mounting surface on which the chip CP is mounted on the substrate WT faces vertically downward (substrate holding step).
- the front end portion of the plate 391A overlaps the head 33H and the front end portion of the plate 391C overlaps the chip transfer portion 132.
- the plate 391A holds the chip CP and the plate 391C does not hold the chip CP.
- the chip mounting system 1 moves the stage 31 so that the mounting position where the chip CP is mounted on the substrate WT is opposed to the head 33H.
- the chip mounting system 1 first recognizes the position where the chip CP is mounted on the substrate WT based on the image data including the alignment mark of the substrate WT photographed by the second imaging unit 41. Then, based on the recognized mounting position of the chip CP, the substrate mounting portion 315 of the stage 31 is moved in the X direction or the Y direction, so that the portion on the substrate WT where the chip CP is mounted and the chip CP held by the head 33H. Facing each other.
- the chip mounting system 1 delivers the chip CP held by the plate 391A to the head 33H as shown in FIG. 9 (step S1).
- the chip mounting system 1 stops the suction by the suction portion 391b of the chip holding portion 391a of the plate 391A and keeps the chip CP on the head 33H in a state where the head 33H is close to the plate 391A.
- the chip CP is transferred from the plate 391A to the head 33H.
- the head 33H holds the chip CP from below vertically (component holding step).
- the chip mounting system 1 transfers the chip CP held by the chip transfer unit 132 to the plate 391C of the chip transfer unit 39 (step S2).
- the chip mounting system passes the chip CP to the chip holding part 391a of the plate 391C by raising the chip transfer part 132 holding the chip CP from the standby position as indicated by an arrow AR11 in FIG.
- the chip delivery unit 132 is lowered to the standby position.
- the chip mounting system 1 recognizes the position and orientation of the chip CP to be passed to the chip reversing unit 131 on the substrate WC based on the image data obtained by photographing with the supply chip imaging unit 15. Then, the chip mounting system 1 executes an alignment operation in which the tape holding unit driving unit 113 corrects the position of the tape holding unit 112 and the inclination around the Z axis according to the recognized position and posture of the chip CP (step) S3).
- the chip mounting system 1 rotates the plate 391 of the chip transport unit 39 by a preset angle ⁇ 1 (step S4).
- the chip transport unit 39 is in the second state in which it does not overlap the plate 391, the head 33H, and the chip transfer unit 132 in the Z-axis direction.
- the angle ⁇ 1 is set to 22.5 degrees when there are four plates 391. That is, if the number of plates 391 is N (N is a positive integer), the angle ⁇ 1 is set to (180 / N) degrees.
- step S5 when the chip mounting system 1 rotates the plate 391, it passes the chip CP from the chip supply unit 11 to the arm 1311 of the chip reversing unit 131 (component supply step) (step S5).
- the chip mounting system 1 first moves the suction unit 1311a of the chip reversing unit 131 to the receiving position of the chip CP.
- the chip mounting system 1 causes the cutting mechanism 111 of the chip supply unit 11 to push the chip CP downward with the needle 111a, and the chip CP pushed out by bringing the arm 1311 of the chip reversing unit 131 close to the dicing tape TE. Pass to arm 1311.
- the chip mounting system 1 starts the alignment of the chip CP held by the head 33H when the plate 391 is rotated (step S6).
- the chip mounting system 1 first raises the head 33H as shown by an arrow AR12 in FIG. 11B to bring the chip CP held by the head 33H closer to the mounting position on the substrate WT where the chip CP is mounted.
- alignment marks MC1a and MC1b as shown in FIG. 12A are provided on the chip CP
- alignment marks MC2a and MC2b as shown in FIG. 12B are provided at positions where the chip CP is mounted on the substrate WT. It has been.
- the chip mounting system 1 uses the alignment marks MC1a and MC1b provided on the chip CP and the alignment marks MC2a and MC2b provided with the chip CP on the substrate WT at the mounting position.
- the alignment operation is executed.
- the chip mounting system 1 performs this alignment operation, for example, while raising the head 33H.
- the chip mounting system 1 performs the alignment operation in a state where the chip CP and the substrate WT are brought close to each other, for example, a distance of several tens ⁇ m to several ⁇ m.
- a part of the light emitted from the first imaging unit 35a, reflected by the mirror 337, and passed through the hollow portion 415 of the head 33H passes through the chip tool 411 and the chip CP.
- a part of the light transmitted through the chip CP is reflected by a portion of the substrate WT where the alignment mark MC2a is provided.
- the remaining part of the light that has passed through the hollow portion 415 of the head 33H is reflected by the portion of the chip CP where the alignment mark MC1a is provided.
- the light reflected by the portion of the substrate WT where the alignment mark MC2a is provided or the portion of the chip CP where the alignment mark MC1a is provided passes through the chip tool 411 and passes through the hollow portion 415 of the head 33H. And these light which passed the hollow part 415 of the head 33H is reflected by the mirror 337, and injects into the image pick-up element of the 1st image pick-up part 35a.
- the chip mounting system 1 acquires image data Ga including an image of the alignment mark MC1a provided on the chip CP and an image of the alignment mark MC2a provided on the substrate WT. Then, as shown in FIG.
- the chip mounting system 1 recognizes the positions of a set of alignment marks MC1a and MC2a provided on the chip CP and the substrate WT based on the image data Ga, and this set of alignment. The amount of displacement ⁇ xa, ⁇ ya between the marks MC1a, MC2a is calculated.
- the chip mounting system 1 simultaneously recognizes the set of the alignment mark MC1a of the chip CP and the alignment mark MC2a of the substrate WT by one image capturing operation without moving the focus axis by the same first imaging unit 35a. To do.
- part of the light emitted from the first imaging unit 35b, reflected by the mirror 337, and passed through the hollow portion 416 of the head 33H also passes through the chip tool 411 and the chip CP.
- a part of the light transmitted through the chip CP is reflected by a portion of the substrate WT where the alignment mark MC2b is provided.
- the remaining part of the light that has passed through the hollow portion 416 of the head 33H is reflected by the portion of the chip CP where the alignment mark MC1b is provided.
- the light reflected by the portion of the substrate WT where the alignment mark MC2b is provided or the portion of the chip CP where the alignment mark MC1b is provided passes through the chip tool 411 and passes through the hollow portion 416 of the head 33H.
- the chip mounting system 1 acquires image data Gb including an image of the alignment mark MC1b provided on the chip CP and an image of the alignment mark MC2b provided on the substrate WT. Then, as described above, the chip mounting system 1 recognizes the positions of the set of marks MC1b and MC2b provided on the chip CP and the substrate WT based on the image data Gb, and this set of marks MC1b and MC2b. Displacement amounts ⁇ xb and ⁇ yb are calculated.
- the chip mounting system 1 simultaneously recognizes the set of the alignment mark MC1b of the chip CP and the alignment mark MC2b of the substrate WT by one image capturing without moving the focus axis by the same first imaging unit 35b. To do. In this way, the chip mounting system 1 can recognize the positional deviation between the chip CP and the substrate WT with high accuracy.
- the chip mounting system 1 includes chips in the X direction, the Y direction, and the rotation direction around the axis BX based on the positional deviation amounts ⁇ xa, ⁇ ya, ⁇ xb, ⁇ yb of these two sets of alignments MC1a, MC2a, MC1b, MC2b.
- Relative displacement amounts ⁇ x, ⁇ y, ⁇ between the CP and the substrate WT are calculated.
- ⁇ x represents a relative positional deviation amount between the chip CP and the substrate WT in the X direction
- ⁇ y represents a relative positional deviation amount between the chip CP and the substrate WT in the Y direction
- ⁇ represents a relative positional deviation amount between the chip CP and the substrate WT in the rotation direction around the axis BX.
- the chip mounting system 1 drives the stage 31 in the X direction and the Y direction and rotates the bonding unit 33 around the axis BX so that the calculated relative displacement amount is reduced. In this way, the chip mounting system 1 performs the alignment operation for correcting the relative positional deviation between the chip CP and the substrate WT.
- the chip mounting system 1 mounts the chip CP on the substrate WT by further raising the head 33H holding the chip CP (component mounting step) (step S7). More specifically, the chip mounting system 1 brings the head 33H holding the chip CP close to the stage 31 so that the chip CP is brought into contact with the mounting surface WTf of the substrate WT and the chip CP is surface-bonded to the substrate WT. As described above, the mounting surface WTf of the substrate WT and the bonding surface CPf bonded to the substrate WT in the chip CP are subjected to a hydrophilic treatment by, for example, the hydrophilic treatment device 60.
- the chip CP is bonded to the substrate WT by bringing the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT. Thereafter, the chip mounting system 1 lowers the head 33H and returns the head 33H to the standby position as indicated by an arrow AR15 in FIG. 14 (step S8).
- the chip mounting system 1 performs a series of processes of steps S5 and S6, and at the same time, as indicated by an arrow AR13 in FIG. 11B, the chip reversing unit 131 pivots the arm 1311 so that the chip CP is turned upside down. (Step S9).
- the chip mounting system 1 transfers the chip CP from the arm 1311 of the chip reversing unit 131 to the chip transfer unit 132 (step S10).
- the chip mounting system 1 passes the chip CP from the arm 1311 to the chip transfer unit 132 by raising the chip transfer unit 132 from the standby position as indicated by an arrow AR14 in FIG. 11B.
- the chip mounting system 1 lowers the chip transfer unit 132 again to the standby position as indicated by an arrow AR16 in FIG.
- the chip mounting system 1 returns the arm 1311 to the standby position by turning the arm 1311 of the chip reversing unit 131 upward as indicated by an arrow AR17 in FIG. 14 (step S11).
- the chip CP is mounted on the substrate WT by the head driving unit 36, the chip CP is reversed by the chip reversing unit 131, and the chip from the chip reversing unit 131 by the chip transfer unit 132.
- the CP is received.
- step S12 the chip mounting system 1 rotates the plate 391 of the chip transport unit 39 by a preset angle ⁇ 1 (step S12).
- the chip transport unit 39 is in the first state in which the front end of the plate 391A overlaps the head 33H and the front end of the plate 391C overlaps the chip transfer unit 132 in the Z-axis direction. become.
- the chip mounting system 1 delivers the chip CP held by the plate 391B to the head 33H in the same manner as in step S1 described above (step S13).
- the chip mounting system 1 transfers the chip CP held by the chip transfer unit 132 to the plate 391D of the chip transfer unit 39 in the same manner as in step S2 described above (step S14).
- the chip mounting system 1 causes the tape holding unit driving unit 113 to place the tape holding unit 112 on the position and the inclination around the Z axis according to the position and posture of the chip CP on the substrate WC. An alignment operation is performed to correct (step S15).
- the chip mounting system 1 rotates the plate 391 of the chip transport unit 39 by a preset angle ⁇ 1 (step S16), and from the chip supply unit 11 to the chip reversing unit 131 in the same manner as step S3 described above.
- the chip CP is transferred to the arm 1311 (step S17).
- the chip mounting system 1 starts the alignment of the chip CP held by the head 33H in the same manner as in step S6 described above (step S18).
- the chip transport unit 39 is in the second state in which it does not overlap the plate 391, the head 33H, and the chip transfer unit 132 in the Z-axis direction.
- the chip mounting system 1 repeatedly executes the processing from step S7 to step S18.
- the stage 31 holds the substrate WT such that the mounting surface on which the chip CP is mounted on the substrate WT faces vertically downward.
- the head driving unit 36 moves the head 33H holding the chip CP vertically upward to bring the head 33H close to the stage 31 and mount the chip CP on the mounting surface of the substrate WT.
- the tape holding unit 112 has a frame shape, and holds the substrate WC attached to the dicing tape TE in a posture in which the dicing sheet TE is positioned vertically above the substrate WC. Thereby, it is possible to suppress adhesion of particles to the surface side of each chip CP constituting the substrate WC mounted on the substrate WT. Further, the cutting mechanism 111 supplies each chip CP constituting the substrate WC by protruding the needle 111a vertically downward from the vertically upper side of the dicing tape TE sheet and protruding the chip CP vertically downward. . Thereby, the structure of the chip
- the peripheral portion CPs of the chip CP is directed vertically upward (+ Z direction) by the chip holding unit 391a and the bonding surface CPf side bonded to the substrate WT in the chip CP.
- the chip CP is transported while being held in a state.
- the chip CP has a rectangular parallelepiped shape, and has a notch CPk formed in the outer peripheral portion of the bonding surface CPf bonded to the substrate WT. Further, as shown in FIG.
- the chip holding portion 391a has an adsorption portion 391b and a protruding portion 391c protruding around the adsorption portion 391b, and the protruding amount HT of the protruding portion 391c is equal to that of the notch portion CPk. It is larger than the height HC in the direction orthogonal to the joint surface CPf (Z-axis direction). And the chip
- the chip mounting system 1 in the first state of the chip transport unit 39, the reception of the chip CP from the chip transport unit 39 by the head 33H and the transfer from the chip supply unit 11 to the chip inversion unit 131 are performed. The supply of the chip CP and the transfer of the chip CP from the chip transfer unit 132 to the chip transfer unit 39 are executed.
- the chip CP is mounted on the substrate WT by the head driving unit 36, the chip CP is reversed by the chip reversing unit 131, and the chip from the chip reversing unit 131 by the chip transfer unit 132. The CP is received.
- the mounting of all the chips CP to be mounted on the substrate WT is completed after starting the mounting of the chip CP on the substrate WT, compared to the case where each of these operations is executed sequentially.
- the first imaging units 35a and 35b are arranged vertically below the chip CP ( ⁇ ) in a state where the chip CP is disposed at the position where the chip CP is mounted on the substrate WT. From the Z direction), the alignment marks MC1a and MC1b of the chip CP are imaged.
- the second imaging unit 41 captures the alignment marks MC2a and MC2b of the substrate WT from the vertically upper side (+ Z direction) of the substrate WT in a state where the chip CP is disposed at the position where the chip CP is mounted on the substrate WT. To do.
- the chip mounting system 1 can accurately recognize the alignment marks MC1a, MC1b of the chip CP and the alignment marks MC2a, MC2b of the substrate WT, so that the alignment accuracy of the chip CP with respect to the substrate WT is improved. There is.
- control unit 90 uses the substrate WT and the chip CP from image data obtained by imaging the alignment marks MC1a, MC1b, MC2a, and MC2b in a state where the substrate WT and the chip CP are in contact with each other. Measure relative position error with. Then, the control unit 90 causes the head driving unit 36 to correct the position where the chip CP is mounted on the substrate WT, according to the measured relative position error. Thereby, the chip mounting system 1 can accurately perform the alignment of the chip CP with respect to the substrate WT.
- the head driving unit 36 brings the head 33H holding the chip CP close to the stage 31 and brings the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT.
- the chip CP is surface-bonded to the substrate WT. More specifically, the head driving unit 36 brings the chip CP into contact with the substrate WT by bringing the bonding surface of the chip CP into contact with the mounting surface WTf of the substrate WT subjected to the hydrophilic treatment by the hydrophilic treatment apparatus 60.
- a void is generated in the range of about several mm in diameter around the particle.
- COW chip-on-wafer
- a so-called COW (chip-on-wafer) type chip mounting system that selects and mounts non-defective chips is more advantageous.
- the chip mounting system 1 according to the present embodiment as described above, countermeasures against particles that suppress adhesion of particles to the mounting surface WTf of the substrate WT are taken. This makes it possible to employ hydrophilic treatment bonding in mounting the chip CP on the substrate WT.
- the resin molding apparatus cures the resin part by irradiating ultraviolet rays in a state where a mold member (hereinafter referred to as “mold”) on which a resin made of an ultraviolet curable resin is placed is pressed against the substrate. It is a system to let you. By using this resin molding apparatus, a fine structure formed of resin on the substrate can be produced.
- the resin part is made of a photocurable resin.
- the photocurable resin include a photo radical curable resin containing at least one polymerizable compound.
- the photo-radical curable resin for example, a mixture of a photo-radical initiator and a liquid monomer containing acrylates, methacrylates, vinyl esters, vinyl amides, etc., which are rapidly polymerized and cured by irradiation with ultraviolet rays is used. Can do.
- a photocurable resin you may add hardeners, such as an aromatic carbonyl compound, ketones, and phosphine oxides.
- the substrate for example, a glass substrate or sapphire substrate that is transparent to ultraviolet rays is employed.
- the resin molding apparatus 2 includes a stage (substrate holding unit) 2031, a bonding unit 2033 having a head 2033H, a head driving unit 36 for driving the head 2033H, and an imaging unit. 2041, a distance measuring unit 511, a dispenser (resin discharging unit) 52, an ultraviolet irradiation unit (resin curing unit) 53, a support unit 55, a cover 2050, and a control unit 2090.
- the stage 2031 holds the substrate WT such that the formation surface WTf forming the resin portion R in the substrate WT faces vertically downward ( ⁇ Z direction).
- the head drive unit 36 moves the head 2033H vertically upward (+ Z direction) after making the head 2033H face the position Pos2 where the resin part R is formed on the substrate WT, thereby moving the head 2033H closer to the stage 2031 and resin.
- the mold M is pressed from vertically below the part R ( ⁇ Z direction).
- the imaging unit 2041 has an alignment mark (third alignment mark) of the mold M, which will be described later, from vertically above the mold M (+ Z direction) with the head 2033H facing the position where the resin part R is formed on the substrate WT. Images are taken of MM1a and MM1b, and alignment marks (fourth alignment marks) MM2a and MM2b of the substrate WT described later.
- the bonding unit 2033 includes a Z-axis direction moving member 331, a first disk member 332, a piezo actuator (mold orientation adjusting unit) 333, a second disk member 334, and a head 2033H.
- the head 2033H sucks and holds the mold M from vertically below ( ⁇ Z direction).
- the head 2033H has a chip tool 411 and a head main body 2413.
- the head main body 2413 is not provided with a hollow portion as described in the first embodiment.
- There are three piezo actuators 333 and each operates according to a control signal input from the control unit 2090. These piezo actuators 333 adjust the posture of the mold M based on the distance measured by the distance measuring unit 511.
- the mold M is a mold member having a flat surface MF facing a surface on which the resin portion R of the substrate WT is formed in a state where a plurality of concave portions MT are formed and held by the head 2033H.
- the mold M is made of metal, glass, ceramics, or the like. Further, a stepped portion MS is formed in the peripheral portion of the mold M, and has a mirror-like MF and MS surface capable of reflecting laser light.
- the stage 2031 holds the substrate WT such that the formation surface WTf on which the resin portion R is formed on the substrate WT is oriented vertically downward ( ⁇ Z direction).
- the stage 2031 can move in the X direction and the Y direction. Thereby, the relative positional relationship between the bonding part 2033 and the stage 2031 can be changed, and the formation position of each resin part R on the substrate WT can be adjusted.
- the stage 2031 has a substrate mounting portion 2315 provided with a through hole 2031a through which the nozzle 522 of the dispenser 52 is inserted in the peripheral portion.
- the dispenser 52 forms the resin portion R by discharging an ultraviolet curable resin onto the formation surface WTf of the substrate WT.
- the dispenser 52 includes a main body 520, a dispenser driving unit 521 that drives the main body 520, a nozzle 522 that protrudes downward from the main body 520, and a discharge controller 523 that controls the amount of resin discharged from the nozzle 522. And having.
- the main body 520 is connected to a resin reservoir (not shown) that stores resin via a supply pipe (not shown), and the resin supplied from the resin reservoir is discharged from the nozzle 522.
- the discharge controller 523 controls the amount of resin discharged from the nozzle 522 based on the control signal input from the controller 2090.
- the main body 520 is movable in the Z-axis direction (see arrow AR6 in FIG. 15).
- the resin molding apparatus 2 first moves the stage 2031 in the X-axis direction so that the nozzle 522 and the through hole 2031a of the stage 2031 overlap in the Z-axis direction.
- the resin molding apparatus 2 causes the dispenser driving unit 521 to move the main body 520 and the nozzle 522 vertically downward ( ⁇ Z direction).
- the dispenser 52 is in a discharge ready state where the resin is discharged into the concave portion MT of the mold M and the preparation for placing the resin on the mold M is completed.
- the resin molding apparatus 2 injects resin into the concave portion MT of the mold M.
- the resin molding apparatus 2 injects resin into the concave portion MT of the mold M by the discharge control unit 523. Thereafter, the resin molding apparatus 2 causes the main body 520 to move vertically upward (+ Z direction) by the dispenser driving unit 521 to place the dispenser 52 in a standby state.
- the distance measuring unit 511 measures the distance between the formation surface WTf where the resin portion R of the substrate WT is formed and the flat surface MF disposed facing the substrate WT of the mold M using laser light. . Then, the head driving unit 36 brings the head 2033H holding the mold M closer to the stage 2031 holding the substrate WT based on the distance measured by the distance measuring unit 511. The distance measuring unit 511 measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M at three locations on the flat surface MF of the mold M.
- the distance measurement is not limited to three, and the distance between the formation surface WTf and the flat surface MF and the parallelism of the flat surface MF with respect to the formation surface WTf can be measured as long as there are three or more. . Further, the measurement at three or more locations for adjusting the parallelism of the flat surface MF with respect to the formation surface WTf may be performed as needed. In each operation of pressing the mold MF against the substrate WT, the distance may be measured at only one location to control only the gap between the formation surface WTf of the substrate WT and the flat surface MF of the mold M.
- the imaging unit 2041 is placed on the stepped portion MS of the mold M from vertically above the substrate WT (+ Z direction) in a state where the mold M is disposed at a position where the resin portion R is formed on the substrate WT.
- the provided alignment marks (third alignment marks) MM1a and MM1b and the alignment marks (fourth alignment marks) MM2a and MM2b provided on the substrate WT are imaged.
- the imaging unit 2041 is a so-called one-field camera, and sequentially captures a set of alignment marks MM1a and MM2a and a set of alignment marks MM1b and MM2b while changing the position in the XY direction.
- the resin molding apparatus 2 first makes the imaging unit 2041 orthogonal to the axis in the focus direction with a relatively long distance between the alignment marks MM1a and MM1b and the alignment marks MM2a and MM2b before pressing the mold M. Alignment (hereinafter referred to as “pre-alignment”) while moving in the direction of movement. Thereafter, the resin molding apparatus 2 presses the mold M against the substrate WT and the resin filled in the concave portion MT of the mold M is in contact with the formation surface WTf of the substrate WT, and the alignment marks MM1a and MM2a are aligned.
- pre-alignment Alignment
- a set of marks MM1b and MM2b is simultaneously recognized by one image capture without moving the focus axis and aligned in the resin (hereinafter referred to as “immersion alignment”).
- immersion alignment In this way, vibration and focus axis errors can be avoided by simultaneously recognizing, and after the resin is brought into contact with the substrate WT, the positional deviation in a state where the resin is in contact with the substrate WT is corrected, and the resin is cured.
- High-precision resin molding can be realized by just aligning.
- pre-alignment is performed in advance in order to avoid that the positional deviation between the alignment marks MM1a and MM1b and the alignment marks MM2a and MM2b is large and cannot be recognized simultaneously.
- the flow of the resin is prevented by reducing the amount of movement of the mold M during alignment in a state where the resin filled in the concave portion MT of the mold M is in contact with the formation surface WTf of the substrate WT.
- the imaging unit 2041 captures an image when a part of the resin portion R protrudes from the portion of the flat surface MF where the alignment marks MM1a and MM1b are provided. In some cases, the images of the alignment marks MM1a and MM1b are blurred. On the other hand, in the mold M according to the present embodiment, alignment marks MM1a and MM1b are provided in the stepped portion MS.
- the imaging unit 2041 can capture the images of the alignment marks MM1a and MM1b through the region where the resin portion R is not interposed between the substrate WT and the mold M, so that the alignment marks MM1a and MM1b can be recognized well.
- the ultraviolet irradiation unit 53 cures the resin part R by irradiating the resin part R with ultraviolet rays from vertically above (+ Z direction) of the substrate WT while the mold M is pressed against the resin part R formed on the substrate WT.
- the ultraviolet irradiator 53 includes, for example, a laser light source that emits ultraviolet light, a mercury lamp, or the like.
- the support unit 55 integrally supports the dispenser 52, the ultraviolet irradiation unit 53, the imaging unit 2041, and the distance measurement unit 511, and is movable in the XY directions. Further, the support portion 55 is also movable in the Z-axis direction. Thereby, the focus adjustment of the imaging unit 2041 is possible.
- the dispenser 52, the ultraviolet irradiation unit 53, the imaging unit 2041, and the distance measurement unit 511 may be individually supported by a support unit, and each support unit may be independently movable in the XY directions.
- the cover 2050 is arranged in the resin molding apparatus 2 so as to partition a space in which the head driving unit 36 is arranged and a space in which the stage 2031 is arranged. Thereby, adhesion of particles generated in the stage 2031 to the head driving unit 36 is suppressed.
- the control unit 2090 includes an MPU (Micro Processing Unit) 901, a main storage unit 902, an auxiliary storage unit 903, an interface 2904, and a bus 905 that connects the units.
- MPU Micro Processing Unit
- main storage unit 902 main storage unit 902
- auxiliary storage unit 903 main storage unit 903
- interface 2904 converts the measurement signal input from the distance measurement unit 511 into measurement information and outputs the measurement information to the bus 905.
- the interface 2904 converts the captured image signal input from the imaging unit 2041 into captured image information and outputs the captured image information to the bus 905.
- the MPU 901 reads the program stored in the auxiliary storage unit 903 into the main storage unit 902 and executes it, thereby causing the Z-direction drive unit 34, the ⁇ -direction drive unit 37, the piezo actuator 333, and the X-direction drive unit via the interface 2904.
- a Y-direction drive unit 323, a dispenser drive unit 521, a discharge control unit 523, an ultraviolet irradiation unit 53, and a support unit 55 are output control signals.
- the control unit 2090 calculates the relative position error between the substrate WT and the mold M by imaging the alignment marks MM1a, MM1b, MM2a, and MM2b in a state where the mold M is pressed against the resin portion R. Then, the control unit 2090 transfers the substrate to the Z direction driving unit 34, the ⁇ direction driving unit 37 of the head driving unit 36, the X direction driving unit 321 and the Y direction driving unit 323 of the stage 2031 according to the calculated relative position error. The position and posture of the mold M with respect to the WT are corrected. In this case, the ultraviolet irradiation unit 53 irradiates the resin part R with ultraviolet rays after the correction of the position and orientation of the mold M with respect to the substrate WT is completed.
- FIG. 18 the resin molding apparatus 2 is assumed to hold the substrate WT on the stage 2031 and hold the mold M on the head 2033H.
- the stage 2031 holds the substrate WT such that the formation surface WTf forming the resin portion R on the substrate WT faces vertically downward (substrate holding step).
- the head 2033H holds the mold M from below vertically (mold holding step).
- the resin molding apparatus 2 moves the support portion 55 so that the dispenser 52 is positioned vertically above the head 2033H (+ Z direction) in the Z-axis direction (see arrow AR72 in FIG. 19).
- the resin molding apparatus 2 moves the stage 2031 so that the dispenser 52 and the through hole 2031a of the stage 2031 overlap (see arrow AR71 in FIG. 19).
- the resin molding apparatus 2 causes the dispenser driving unit 521 to lower the main body unit 520 vertically downward ( ⁇ Z direction), thereby bringing the nozzle 522 closer to the mold M as shown in FIG. In this way, the resin molding apparatus 2 places the dispenser 52 in a discharge preparation ready state as shown in FIG. 18 (step S201).
- the resin molding apparatus 2 causes the discharge control unit 523 to discharge the resin from the nozzle 522 into the concave portion MT of the mold M by a preset discharge amount (resin discharge step) (step S202). That is, the dispenser 52 discharges the resin into the concave portion MT of the mold M held by the head 2033H. As a result, for example, as shown in FIG. 20, the resin R1 is filled in the recess MT of the mold M.
- the resin molding apparatus 2 moves the main body 520 of the dispenser 52 vertically upward (+ Z direction) by the dispenser driving unit 521. In this way, the resin molding apparatus 2 places the dispenser 52 in a standby state as shown in FIG. 18 (step S203).
- the resin molding apparatus 2 moves the stage 2031 so that the head 2033H and the position where the resin portion R on the substrate WT is formed overlap each other in the Z-axis direction.
- the resin molding apparatus 2 then performs pre-alignment of the mold M held by the head 2033H (step S204). That is, the resin molding apparatus 2 is configured so that the imaging unit 2041 is orthogonal to the axis in the focus direction in a state where the distance between the alignment marks MM1a and MM1b and the alignment marks MM2a and MM2b is relatively long before the mold M is pressed.
- the distance between the flat surface MF of the mold M and the formation surface WTf of the substrate WT is set to about several mm.
- the resin molding apparatus 2 first raises the head 2033H to bring the mold M held by the head 2033H closer to the position where the resin portion R is formed on the substrate WT.
- the mold M is provided with alignment marks MM1a and MM1b, and the alignment marks MM2a and MM2b are also provided at positions where the resin portion R of the substrate WT is formed.
- the resin molding apparatus 2 uses the alignment marks MM1a and MM1b provided on the mold M and the alignment marks MM2a and MM2b provided at positions where the resin portion R of the substrate WT is formed. A pre-alignment operation with the substrate WT is executed.
- the resin molding apparatus 2 performs molding on the substrate WT so that the alignment marks MM1a and MM1b of the mold M and the alignment marks MM2a and MC2b of the substrate WT do not overlap each other when focused. Perform a rough alignment of M.
- the resin molding apparatus 2 adjusts the distance between the mold M and the substrate WT by measuring the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M by the distance measuring unit 511.
- Step S205 the resin molding apparatus 2 adjusts the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M to a distance of several tens ⁇ m to several ⁇ m.
- the mold M is in a state of being close to the substrate WT until a part of the resin R ⁇ b> 1 protrudes from the outer peripheral portion of the concave portion MT of the mold M.
- the head driving unit 36 makes the head 2033H face the position where the resin part R is formed on the substrate WT, and then moves the head 2033H vertically upward to bring the head 2033H closer to the stage 2031 and the vertical of the substrate WT.
- the mold M is pressed from below (mold pressing step).
- the resin molding apparatus 2 performs alignment again (also referred to as “immersion alignment”) in a state where the resin R1 placed on the mold M is in contact with the formation surface WTf of the substrate WT. Is executed (step S206).
- the resin molding apparatus 2 simultaneously recognizes the set of alignment marks MM1a and MM2a and the set of alignment marks MM1b and MM2b by one image capture without moving the focus axis. Thereby, the resin molding apparatus 2 can align the relative position of the mold M with respect to the substrate WT with high accuracy without being affected by the accuracy of the focus axis of the imaging unit 2041 or the vibration.
- the resin molding apparatus 2 acquires image data Ga including an image of the alignment mark MM1a provided on the mold M and an image of the alignment mark MM2a provided on the substrate WT by the imaging unit 2041. Then, the resin molding apparatus 2 recognizes the positions of a set of marks MM1a and MM2a provided on the mold M and the substrate WT based on the image data Ga, and positions between the sets of marks MM1a and MM2a. Deviation amounts ⁇ xa and ⁇ ya are calculated. Similarly, the resin molding apparatus 2 also acquires image data Gb including an image of the alignment mark MM1b provided on the mold M and an image of the alignment mark MM2b provided on the substrate WT.
- the resin molding apparatus 2 recognizes the positions of a set of marks MM1a and MM2a provided on the mold M and the substrate WT based on the image data Gb, and this set of marks MM1b and MM2b. Displacement amounts ⁇ xb and ⁇ yb are calculated. Then, the resin molding apparatus 2 uses the chip CP in the X direction, the Y direction, and the rotation direction around the axis BX based on the positional deviation amounts ⁇ xa, ⁇ ya, ⁇ xb, ⁇ yb of these two sets of alignments MM1a, MM2a, MM1b, MM2b.
- relative displacement amounts ⁇ x, ⁇ y, ⁇ between the substrate and the substrate WT are calculated.
- ⁇ x, ⁇ y, and ⁇ are the same as those in the first embodiment.
- the resin molding apparatus 2 drives the stage 2031 in the X direction and the Y direction so that the calculated relative displacement amount is reduced, and rotates the bonding unit 2033 around the axis BX. In this way, the resin molding apparatus 2 performs an alignment operation for correcting the relative positional deviation between the mold M and the substrate WT.
- the resin molding apparatus 2 irradiates the resin R1 with ultraviolet rays emitted from the ultraviolet irradiation unit 53 (step S207).
- the ultraviolet irradiation unit 53 cures the resin R existing inside the recess MT by irradiating the ultraviolet ray with the mold M pressed against the resin R1 (resin curing step).
- the resin molding apparatus 2 lowers the head 2033H and moves the head 2033H to the standby position (step S208). In this way, the resin portion R is formed on the substrate WT.
- the resin molding apparatus 2 determines whether or not to end the imprint process (step S209).
- the resin molding apparatus 2 determines that the imprint process is to be ended, for example, when a command to end the imprint process is input or when a preset program sequence of the imprint process is completed. If the resin molding apparatus 2 determines that the imprint process is to be continued (step S209: No), the stage 2031 is moved so that the head 2033H faces the next portion of the substrate WT where the resin portion R is to be formed (step S210). . Subsequently, the process of step S201 is executed again.
- step S209 Yes
- the imprint process is ended.
- the stage 31 holds the substrate WT such that the surface of the substrate WT on which the resin portion R is formed faces vertically downward.
- the head drive unit 36 moves the head 2033H vertically upward at a pressing position opposite to the position where the resin part R is formed on the substrate WT, thereby bringing the head 2033H closer to the stage 31 and from below the resin part R vertically. Press the mold M.
- the ultraviolet irradiation unit 53 cures the resin part R by irradiating the resin part R with ultraviolet rays in a state where the mold M is pressed against the resin part R.
- the head driving unit 36 moves the head 2033H vertically upward at a pressing position opposite to the position where the resin part R is formed on the substrate WT.
- the mold M is pressed from the vertically lower side of the resin portion R close to the stage 31. Further, since the mold M is filled with the resin by the dispenser 52 from above in the vertical direction, it is possible to prevent the air in the resin portion R from being caught. This makes it difficult for air to enter the interface between the inner surface of the concave portion MT of the mold M and the resin portion R, so that the resin portion R is formed due to the mixing of air into the interface between the inner surface of the concave portion MT and the resin portion R. The occurrence of defects is suppressed.
- the resin molding apparatus 2 further includes a dispenser 52 that discharges the resin to the concave portion MT of the mold M held by the head 2033H.
- a dispenser 52 that discharges the resin to the concave portion MT of the mold M held by the head 2033H.
- the imaging unit 2041 is viewed from vertically above the mold M (+ Z direction) with the head 2033H facing the position where the resin part R on the substrate WT is formed. Then, the alignment marks MM1a and MM1b of the mold M and the alignment marks MC2a and MC2b of the substrate WT are imaged. Thereby, since the resin molding apparatus 2 can recognize the alignment marks MM1a and MM1b of the mold M and the alignment marks MM2a and MM2b of the substrate WT with high accuracy, the advantage that the alignment accuracy of the mold M with respect to the substrate WT is improved. There is.
- control unit 2090 images the alignment marks MM1a, MM1b, MM2a, and MM2b in a state where the mold M is pressed against the resin portion R, thereby causing a relative position error between the substrate WT and the mold M. Is calculated. Then, the control unit 2090 transfers the substrate to the Z direction driving unit 34, the ⁇ direction driving unit 37 of the head driving unit 36, the X direction driving unit 321 and the Y direction driving unit 323 of the stage 2031 according to the calculated relative position error. The position and posture of the mold M with respect to the WT are corrected. Thereby, the resin molding apparatus 2 can perform the alignment of the mold M with respect to the substrate WT with high accuracy.
- the resin molding apparatus 2 includes a distance measuring unit 511 that measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M using laser light.
- the distance measuring unit 511 measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M by irradiating laser light from above the substrate WT and the mold M. Then, the head driving unit 36 brings the head 2033H holding the mold M close to the stage 2031 holding the substrate WF based on the distance measured by the distance measuring unit 511.
- the resin molding apparatus 2 can control the thickness of the portion of the resin portion R that protrudes from the outer peripheral portion of the concave portion MT in a state where the mold M is pressed against the resin portion R, the shape of the resin portion R can be changed. It can be adjusted with high accuracy.
- the resin molding apparatus 2 includes a piezo actuator 333 that changes the posture of the mold M based on the distance measured by the distance measuring unit 511.
- the distance measuring unit 511 measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M at three or more locations on the flat surface MF of the mold M.
- the head 2033H can hold the mold M so that the flat surface MF of the mold M and the formation surface WTf of the substrate WT are parallel to each other. Therefore, the accuracy of the shape of the resin portion R can be increased.
- the chip mounting system 1 may have a configuration in which a light source that emits light that passes through the substrate WT and the chip CP is disposed above the stage 31.
- the first imaging units 35a and 35b acquire images including the alignment marks MC1a, MC1b, MC2a, and MC2b using transmitted light that is emitted from the light source disposed above the stage 31 and transmitted through the substrate WT and the chip CP. You just have to do it.
- the resin molding apparatus 2 according to Embodiment 2 may also have a configuration in which a light source that emits light that passes through the substrate WT and the mold M is disposed below the stage 2031.
- the first imaging units 35a and 35b acquire images including the alignment marks MM1a, MM1b, MM2a, and MM2b using the transmitted light that is emitted from the light source disposed below the stage 31 and transmitted through the substrate WT and the mold M. You just have to do it.
- the configuration has been described in which an image including the substrate WT and the alignment marks MC1a, MC1b, MC2a, and MC2b of the chip CP is acquired from the lower side of the chip CP by the two first imaging units 35a and 35b.
- the first imaging units 35a and 35b may be configured to capture images including the alignment marks MC1a, MC1b, MC2a, and MC2b of the substrate WT and the chip CP from above the stage 31.
- the same reference numerals as those in FIG. 3 are assigned to the same configurations as those in the first embodiment.
- the camera F direction driving unit 365 and the mirror 337 are fixed to a common base member 3336.
- a bonding apparatus having a head 8633H provided with a pressing portion 86413b for pressing the central portion of the chip CP vertically upward while holding the peripheral portion of the chip CP is provided. It may be a configuration.
- the head 8633H includes a tip tool 86411 and a head main body portion 86413.
- the head main body 86413 includes a suction part 86413a for vacuum-sucking the chip CP to the chip tool 86411, a pressing part 86413b movable in the vertical direction at the center part, and a pressing drive part (not shown) for driving the pressing part 86413b. And).
- the head main body 86413 also has a suction part (not shown) for fixing the chip tool 86411 to the head main body 86413 by vacuum suction.
- a suction part (not shown) for fixing the chip tool 86411 to the head main body 86413 by vacuum suction.
- the head main body portion 86413 is provided with a hollow portion (not shown) similarly to the head main body portion 413 according to the first embodiment.
- the suction part 86413a and the through hole 86411a function as a peripheral part holding part that holds the peripheral part of the chip CP.
- the bonding apparatus having the head 8633H shown in FIG. 23A drives the pressing portion 86413b in the vertical direction (see the arrow AR861 in FIG. 23A) with the peripheral portion of the chip CP adsorbed to the chip tool 86411 (see the arrow AR861 in FIG. 23A). See AR862).
- the chip CP is bent such that the central portion protrudes more toward the substrate WT than the peripheral portion (arrow AR863 in FIG. 23A).
- the head driving unit of the bonding apparatus brings the head 8633H close to the substrate WT while the chip CP is bent, thereby bringing the central portion of the chip CP into contact with the mounting surface WTf of the substrate WT.
- the head drive unit has the suction part 86413a and the through-hole 86411a holding the peripheral part of the chip CP, and the pressing part 86413b presses the central part of the chip CP, so that the central part of the chip CP is compared with the peripheral part.
- the head 8633H is bent so as to protrude toward the substrate WT side, the head 8633H is moved in the vertical direction so as to be close to a stage (not shown) that holds the substrate WT, and the central portion of the chip CP is placed on the mounting surface WTf of the substrate WT. Make contact.
- the bonding apparatus moves the head 8633H in the vertical direction to approach the substrate WT to a preset distance, and then flexes the chip CP to bring the central portion of the chip CP into contact with the mounting surface WTf of the substrate WT. May be. Thereafter, the bonding apparatus mounts the chip CP on the substrate WT by moving the head 8633H closer to the substrate WT while immersing the pressing portion 86413b vertically downward.
- a configuration having a head 8733H as shown in FIG. 23B may be used.
- the head 8733H has a tip tool 87411 and a head main body 87413.
- the head main body 87413 has a suction part 86413a and a discharge port 87413b that is located closer to the center than the suction part 86413a and discharges air.
- the head main body 87413 also has a suction part (not shown) for fixing the chip tool 87411 to the head main body 87413 by vacuum suction.
- the tip tool 87411 has a through hole 86411a formed at a position corresponding to the suction portion 86413a of the head main body portion 87413, and a through hole 87411b formed at a position corresponding to the discharge port 87413b.
- the bonding apparatus having the head 8733H shown in FIG. 23B has a region between the chip tool 87411 and the center portion of the chip CP in a state where the peripheral portion of the chip CP is attracted to the chip tool 87411 (see an arrow AR861 in FIG. 23B). Air is discharged (see arrow AR871 in FIG. 23B). As a result, the chip CP is bent so that the central portion protrudes more toward the substrate WT than the peripheral portion (arrow AR863 in FIG. 23B).
- the bonding apparatus moves the head 8733H in the vertical direction in a state where the chip CP is bent to bring it closer to a stage (not shown) that holds the substrate WT, so that the central portion of the chip CP is mounted on the mounting surface of the substrate WT.
- Contact WTf The bonding apparatus moves the head 8633H in the vertical direction to approach the substrate WT to a preset distance, and then flexes the chip CP to bring the central portion of the chip CP into contact with the mounting surface WTf of the substrate WT. May be.
- the bonding apparatus mounts the chip CP on the substrate WT by reducing the amount of air discharged from the discharge port 87413b and bringing the head 8733H closer to the substrate WT.
- the structure which has a head 7633H as shown, for example in FIG. 24A may be sufficient.
- the head 7633H includes a tip tool 76411, a head main body portion 76413, and a clamp 76412 that holds the peripheral portion of the tip CP.
- the head main body portion 76413 has a pressing portion 76413b that is movable in the vertical direction at the center portion, and a pressing drive portion (not shown) that drives the pressing portion 76413a.
- the head 7933H includes a tip tool 76411, a head main body portion 76413, and a chuck 79412 that presses and holds the peripheral portion of the tip CP from the side.
- the chip CP can be held even if a sufficient level difference that allows the nail to enter the peripheral portion of the chip CP is not formed.
- step difference is formed in the peripheral part of chip
- a configuration including a bonding apparatus having a head 8833H in which the inclination of the tip tool 88411 holding the chip CP relative to the head main body portion 88413 can be changed may be used.
- the head main body portion 88413 includes a shaft portion (not shown) that supports the tip tool 88411 and a tip tool drive portion (not shown) that drives the tip tool 88411 in a direction to rotate around the shaft portion.
- the chip tool 88411 is a tilt variable holding unit that holds the chip CP and in which the tilt of the bonding surface CPf of the chip CP with respect to the mounting surface WTf of the substrate WT is variable.
- the bonding apparatus drives the head 8833H in the vertical direction in a state where the bonding surface CPf of the chip CP is inclined with respect to the mounting surface WTf of the substrate WT (the arrow in FIG. 25A). AR881).
- the head driving unit of the bonding apparatus moves the head 8833H in the vertical direction in a state where the chip tool 88411 holds the front chip CP by inclining the bonding surface CPf of the chip CP with respect to the mounting surface WTf of the substrate WT.
- the edge of the bonding surface CPf of the chip CP is brought into contact with the mounting surface WTf of the substrate WT close to a stage (not shown) that holds the substrate WT.
- the head drive unit of the bonding apparatus moves the head 8833H obliquely upward when the end of the chip CP contacts the mounting surface WTf of the substrate WT, as shown by the broken line in FIG. 25B (see FIG. 25B). (See arrow AR882).
- the chip tool 88411 moves in the direction of rotation about the contact portion P88 between the mounting surface WTf of the substrate WT and the chip CP (arrow AR883 in FIG. 25B).
- the chip CP contacts the mounting surface WTf of the substrate WT in order from the contact portion P88.
- the bonding apparatus 30 controls the degree of expansion / contraction of each of the three piezo actuators 333 so that the bonding surface CPf of the chip CP is inclined with respect to the mounting surface WTf of the substrate WT as shown in FIG. it can. Then, the bonding apparatus 30 drives the head 33H vertically upward with the bonding surface CPf of the chip CP inclined with respect to the mounting surface WTf of the substrate WT (see arrow AR881 in FIG. 26).
- a bonding apparatus having a box shape in which one surface is opened and having a cap 8924 that contacts the head 33 ⁇ / b> H via an O-ring 8928 may be provided.
- the cap 8924 is provided with an opening 8924d for inserting a part of the head 8933H toward the outside of the cap 8924.
- An O-ring 8926 is attached to the outer periphery of the opening 8924d on the outer wall of the cap 8924.
- the bonding apparatus includes a vacuum pump (vacuum source) (not shown) that raises the degree of vacuum of the space S89 by exhausting air existing in the space S89 in the cap 8924 through the exhaust port 8924a of the cap 8924.
- a vacuum pump vacuum source
- the bonding apparatus In the bonding apparatus according to this modification, first, the cap 8924 is moved in a direction approaching the substrate WT (see arrow AR891 in FIG. 27A), and the O-ring 8926 is pressed against the mounting surface WTf of the substrate WT. Next, the bonding apparatus exhausts the gas existing in the space S89 through the exhaust port 8924a in a state where the chip CP is disposed in the space S89 in the cap 8924, thereby increasing the degree of vacuum of the space S89. Then, as shown in FIG. 27B, the bonding apparatus moves the head 8933H vertically upward (see the arrow AR892 in FIG. 27B) with the degree of vacuum in the space S89 raised, and the chip CP held by the chip tool 89411. Is pressed against the substrate WT. Thereafter, the bonding apparatus lowers the head 8933H and the cap 8924 after returning the space S89 in the cap 8924 to atmospheric pressure.
- the chip CP is mounted on the substrate WT in the space S89 in the cap 8924 where the degree of vacuum is increased, the space between the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP is set. Generation of voids due to entrainment of bubbles is suppressed.
- the chip supply unit 11 projects the chip CP to the chip transfer unit 13 by projecting one chip CP downward from the plurality of chips CP attached to the dicing tape TE with the needle 111a.
- the example of passing is explained.
- the present invention is not limited to this.
- the surface mounted on one substrate WT among the plurality of chips CP may be provided with a mechanism for vacuum-chucking the surface opposite to that and delivering it to the chip transfer unit 13.
- the chip CP is surface-bonded to the substrate WT.
- the present invention is not limited to this, and for example, the chip CP may be bonded to the substrate WT via metal bumps. .
- the hydrophilic treatment device 60 constituting the chip mounting system is not necessary.
- the dispenser 52 is disposed above the stage 2031 in the resin molding apparatus 2 according to Embodiment 2, the example in which the dispenser 52 is disposed above the stage 2031 has been described.
- the arrangement of the dispenser 52 is not limited to this.
- the dispenser 4052 is a resin molding apparatus 4 arranged below the substrate WT held on the stage 31. Also good.
- the same reference numerals as those in FIG. 15 are assigned to the same configurations as those in the second embodiment.
- the dispenser 4052 includes a main body portion 4520, a dispenser driving portion 4521, a nozzle 4522, and a discharge control portion 4523.
- Main body 4520 is movable in a direction orthogonal to the Z-axis.
- the resin molding apparatus 4 moves the main-body part 4520 by the dispenser drive part 4521 to the position where the nozzle 4522 overlaps the head 2033H in the Z-axis direction.
- the dispenser 4052 is in a discharge preparation completion state in which preparation for discharging the resin to the concave portion MT of the mold M is completed.
- the resin molding apparatus 4 injects the resin into the concave portion MT of the mold M.
- the resin molding apparatus 4 injects resin into the concave portion MT of the mold M by the discharge control unit 4523. Thereafter, the resin molding apparatus 4 causes the dispenser drive unit 4521 to move the main body 4520 to a position where the nozzle 4522 does not overlap the head 2033H in the Z-axis direction, thereby placing the dispenser 4052 in a standby state.
- the dispenser drive unit 4521 to move the main body 4520 to a position where the nozzle 4522 does not overlap the head 2033H in the Z-axis direction, thereby placing the dispenser 4052 in a standby state.
- the nozzle 4522 of the dispenser 4052 needs to be configured to have a short length in the height direction (Z-axis direction).
- the imaging unit 2041 is disposed above the stage 2031 has been described.
- the arrangement of the imaging unit 41 is not limited to this, and for example, as shown in FIG. May be.
- FIG. 29 the same reference numerals as those in FIG. 16 are assigned to the same configurations as those in the second embodiment.
- Two cameras capable of acquiring the left and right alignment marks MM1a, MM1b, MM2a, and MM2b at the same time are configured from the imaging units 35a and 35b and the mirror 377.
- the resin molding apparatus includes a stage 2031, a bonding unit 33 having a head 33 ⁇ / b> H, a head driving unit 36 that drives the head 33 ⁇ / b> H, imaging units 35 a and 35 b, a camera F direction driving unit 365, and a camera.
- the imaging units 35a and 35b, the camera F direction driving unit 365, and the camera Z direction driving unit 363 are the same as the imaging units 35a and 35b, the camera F direction driving unit 365, and the camera Z direction driving unit 363 described in the first embodiment. It is a configuration.
- the resin molding apparatus includes alignment marks MM1a and MM1b provided on the mold M and alignment marks MM2a and MM2b provided at positions where the resin portion R of the substrate WT is formed. Then, an alignment operation between the mold M and the substrate WT is performed.
- the resin molding apparatus includes an image of the alignment mark MM1a provided on the mold M and an image of the alignment mark MM2a provided on the substrate WT. Data Ga is acquired.
- the resin molding apparatus recognizes the positions of a set of marks MM1a and MM2a provided on the mold M and the substrate WT based on the image data Ga, and a positional shift between the sets of marks MM1a and MM2a.
- the amounts ⁇ xa and ⁇ ya are calculated.
- the resin molding apparatus also acquires image data Gb including an image of the alignment mark MM1b provided on the mold M and an image of the alignment mark MM2b provided on the substrate WT.
- the resin molding apparatus recognizes the positions of the set of marks MM1a and MM2a provided on the mold M and the substrate WT based on the image data Gb, and the set of marks MM1b and MM2b.
- a positional shift amount ⁇ xb, ⁇ yb between each other is calculated. According to this configuration, since the image data Ga and Gb can be imaged simultaneously, the time required for alignment can be shortened.
- the imaging unit 2041 that is a so-called one-field camera is disposed above the substrate WT.
- the present invention is not limited thereto, and for example, as illustrated in FIG.
- a two-camera configuration including the imaging units 35a and 35b and the mirror 377 may be disposed above the substrate WT.
- the imaging units 35a and 35b can simultaneously image the set of alignment marks MM1a and MM2a and the set of alignment marks MM1b and MM2b, so that the time required for alignment can be shortened.
- a cap 6524 and an O-ring 6525 as a sealing member are provided at the lower end of the main body 520 of the dispenser 6052.
- the cap 6524 has, for example, a box shape in which one surface is opened, and includes a bottom wall 6524b having substantially the same shape as the plan view of the mold M, and a side wall 6524c erected on the periphery of the bottom wall 6524b.
- An exhaust port 6524a is provided in a part of the cap 6524.
- the cap 6524 is made of, for example, metal.
- the O-ring 6525 is made of an elastomer.
- a through hole 6524d is provided in the center of the bottom wall 6524b, and a nozzle 522 is inserted therethrough. A gap between the through hole 6524d and the nozzle 522 is sealed with an O-ring 6526. Further, the resin molding device 6 includes a vacuum pump (vacuum source) 6526 connected to the exhaust port 6524a of the cap 6524 via the exhaust pipe L6.
- the resin molding apparatus 6 performs the same process as the imprint process described in the second embodiment, for example.
- the resin molding apparatus 6 first lowers the main body 520 (see arrow AR73 in FIG. 31), and the tip of the side wall 6524c of the cap 6524 Is brought into contact with the peripheral portion MS of the mold M through an O-ring 6525.
- the cap 6524 abuts on the opening end side of the concave portion MT in the mold M via the O-ring 6525 in a state where the dispenser 6052 has approached the mold M to a preset distance, and the airtight space S6 between the cap M524 and the mold M.
- the resin molding apparatus 6 exhausts the gas existing in the space S6 surrounded by the cap 6524 and the mold M through the exhaust port 6524a by the vacuum pump 6526. Increase the degree of vacuum in S6. In this way, the resin molding apparatus 6 puts the dispenser 6052 into a discharge preparation completion state. Subsequently, the resin molding apparatus 6 injects the resin R1 into the concave portion MT of the mold M by discharging the resin R1 from the nozzle 522 of the dispenser 6052 in the process of step S202 of the imprint process shown in FIG.
- the cavity CA does not penetrate into the recess MT of the resin R1 and a void CA is generated. .
- the resin molding apparatus 6 releases the space S6 inside the cap 6524 to the atmosphere, then raises the main body 520 (see arrow AR602 in FIG. 32B), and removes the cap 6524 from the mold M.
- the resin R1 injected into the mold M is pushed into the inner side of the recess MT by atmospheric pressure.
- the gap CA generated behind the recess MT disappears.
- the tip of the side wall 6524c of the cap 6524 is brought into contact with the peripheral portion MS of the mold M through the O-ring 6525, but the cap 6524 is directly molded.
- abut M may be sufficient.
- a flange member 7527 is provided so as to project around the mold M, and a cap 7524 having an exhaust port 7524a in part is attached to an O-ring 7525. It may be configured to abut against the flange member 7527.
- the cap 7524 has a through hole 7524d through which the nozzle 522 is inserted, and a gap between the through hole 7524d and the nozzle 522 is sealed with an O-ring 7526.
- a box-shaped one surface may be opened, and a cap 8524 that contacts the head 2033H via an O-ring 8528 may be provided.
- the cap 8524 is provided with an opening 8524d through which the nozzle 522 of the dispenser 6052 is inserted.
- An O-ring 8526 is attached to the outer periphery of the opening 8524d on the outer wall of the cap 8524. Then, the resin molding apparatus moves the main body 520 of the dispenser 6052 downward (see arrow AR801 in FIG. 34A), and inserts the nozzle 522 into the cap 8524.
- the O-ring 8526 comes into contact with the lower surface of the flange portion 8520 provided in the main body portion 520 (see the one-dot chain line in FIG. 34A), and the inside of the cap 8524 is sealed.
- the resin molding apparatus exhausts the gas present in the cap 8524 through the exhaust port 8524a to increase the degree of vacuum in the cap 8524, and then discharges the resin R1 from the nozzle 522 of the dispenser 6052 to the concave portion MT of the mold M. .
- the cap 8524 is slidable in the Z-axis direction with respect to the mold M (see arrow AR803 in FIG. 34B), and the cap 8524 is moved in the Z-axis direction.
- a cap drive unit (not shown) to be moved is provided.
- the resin molding apparatus may include an elastic member that is coupled to the cap 8524 and biases the cap 8524 in the direction in which the cap 8524 is pressed against the mold M (+ Z direction).
- the resin molding apparatus moves the head 2033H in a direction to approach the substrate WT (see arrow AR802 in FIG. 34B) and moves the cap 8524 in the ⁇ Z direction with respect to the mold M. Let This prevents the cap 8524 from contacting the substrate WT when the resin molding apparatus presses the mold M against the substrate WT.
- the resin molding apparatus described above may operate so as to press the cap 8524 against the substrate WT via the O-ring 8526 as shown in FIGS. 35A and 35B, for example.
- the resin molding apparatus since resin molding is performed in the space S6 in the cap 8524 in which the degree of vacuum is increased, it is possible to prevent entrainment of bubbles in the resin R1.
- the resin molding apparatus exhausts the gas present in the space S6 in a state where the mold M in which the resin R1 is injected into the recess MT is disposed in the space S6 in the cap 8524. The air is exhausted through the port 8524a to increase the degree of vacuum in the space S6. Then, as shown in FIG.
- the resin molding apparatus raises the mold M in which the resin R1 is injected into the concave portion MT and presses it against the substrate WT in a state where the degree of vacuum of the space S6 is increased. Thereafter, in a state where the mold M is pressed against the substrate WT, the resin molding apparatus irradiates the resin R1 with ultraviolet rays to cure the resin R1. Thereafter, the resin molding apparatus returns the space S6 in the cap 8524 to atmospheric pressure, and then lowers the mold M to remove the mold M from the substrate WT.
- This configuration has an advantage that, for example, it is not necessary to provide a large chamber because the degree of vacuum can be locally increased around the mold M for processing. Further, by making the gap between the cap 8524 and the mold M as small as possible, the distance between the resin portions adjacent to each other on the substrate WT can be shortened.
- the resin molding apparatus performs both evacuation in the cap 8524 executed when the resin R1 is injected into the concave portion MT of the mold M and evacuation in the cap 8524 executed when the mold M is pressed against the substrate WT. May be executed.
- the space S6 is returned to the atmospheric pressure.
- a configuration in which the resin R1 is injected into the mold M again may be employed. After injecting the resin R1 into the concave portion MT of the mold M in a state where the degree of vacuum of the space S6 is increased, when the space S6 is returned to the atmospheric pressure, the resin R1 injected into the concave portion MT is pushed into the inner side of the concave portion MT. The resin R1 is in shortage at the end.
- the resin R1 is injected again into the mold M, so that the shortage of the resin R1 can be compensated.
- the surface of the placed resin R1 can be smooth without unevenness.
- the resin molding apparatus puts the resin R1 into the mold M in a state where the space S6 is at atmospheric pressure and then raises the vacuum degree of the space S6, and then returns the space S6 to atmospheric pressure,
- pours resin R1 into the mold M may be sufficient.
- the bubbles contained in the resin R1 injected into the concave portion MT are released when the degree of vacuum of the space S6 is increased, and at the end of the concave portion MT.
- the resin R1 becomes insufficient.
- the degree of vacuum in the space S6 is increased in a state where the resin R1 is injected into the concave portion MT of the mold M, the resin R1 is vaporized, and the resin R1 may be insufficient at the end portion of the concave portion MT.
- the resin R1 is injected again into the mold M, so that the shortage of the resin R1 can be compensated.
- the surface of the placed resin R1 can be smooth without unevenness.
- the resin coating apparatus may be configured to include, for example, a plunger, and draw out only a necessary amount of resin to be placed on the mold M by the plunger, and push it away. In this case, the occurrence of problems due to the resin residue in the nozzle as described above is suppressed.
- the resin molding apparatus 2 described in the second embodiment may include a mold heating unit (not shown) that heats the mold M in a state where the ultraviolet curable resin is injected into the concave portion of the mold. .
- the mold heating unit when the mold heating unit is injecting the resin R1 that is an ultraviolet curable resin into the concave portion MT of the mold M, or after injecting the resin R1 that is the ultraviolet curable resin into the concave portion MT of the mold M,
- the temperature of the resin injected into the concave portion MT may be increased by heating M. That is, for example, in the process of step S202 of the imprint process shown in FIG. 18, the resin molding apparatus heats the mold M by the mold heating unit to bring the mold M to a predetermined temperature or higher and then fills the concave portion MT of the mold M.
- the resin R1 may be injected.
- the resin molding apparatus may heat the mold M by the mold heating unit after injecting the resin R1 into the concave portion MT of the mold M. Further, the resin molding apparatus may inject the resin R1 into the concave portion MT of the mold M while heating the mold M by the mold heating unit to raise the temperature of the mold M.
- the resin used is not limited to the ultraviolet curable resin, but may be a thermosetting resin or a thermoplastic resin.
- the resin molding apparatus may lower the temperature of the mold M by stopping the heating by the mold heating unit when pressing the mold M against the substrate. .
- the resin molding apparatus heats the mold M when injecting the resin R1 into the concave portion MT of the mold M, and lowers the temperature of the mold M when pressing the mold M in which the resin R1 is injected into the concave portion MT against the substrate WT. It may be made to repeat.
- the resin R1 is an ultraviolet curable resin
- the resin R1 is softened when the temperature of the resin R1 rises and is cured when it is lowered. Therefore, the resin molding method of this modification is suitable.
- the resin to be used is not limited to the ultraviolet curable resin, but may be another type of resin whose viscosity increases when the temperature is lowered, such as a thermosetting resin or a thermoplastic resin.
- the viscosity of the resin R can be lowered by heating the resin R1 injected into the recess MT of the mold M, the resin R1 can easily penetrate into the recess MT. Further, since the resin R1 flows by heating the resin R1 injected into the recess MT of the mold M, the air accumulated in the back of the recess MT moves to the opening side of the recess MT along with the flow of the resin R1. Can be removed. Therefore, it is possible to prevent air from being accumulated on the back side of the recess MT after the resin R1 is injected into the recess MT of the mold M.
- the resin molding apparatus lowers the temperature of the mold M by stopping the heating by the mold heating unit when the mold M is pressed against the substrate after the resin R1 is injected into the concave portion MT of the mold M. Moreover, you may cool forcibly, such as air cooling and water cooling. Thereby, the entrapment of air into the resin R1 injected into the recess MT of the mold M is suppressed.
- the boiling point of the resin R1 is high because the degree of vacuum in the space S6 is high. It is easy to vaporize. Therefore, in this case, the temperature of the resin R1 is lowered so as not to be equal to or higher than the boiling point of the resin R1 in a state where the degree of vacuum of the space S6 is increased, and the resin R1 is applied to the mold M without vaporizing the resin R1. Is preferred.
- the cooling means (not shown) for cooling the mold M when the resin R1 is applied to the mold M in a state where the degree of vacuum in the space S6 is increased is the tip of the head 2033H.
- the cooling means may be, for example, a Peltier element (not shown) provided at the tip of the head 2033H, or a flow that causes a liquid such as low-temperature gas or liquid nitrogen to flow at the tip of the head 2033H.
- the structure in which the path was provided may be sufficient. With such a cooling means, the mold M held at the tip of the head 2033H can be forcibly cooled.
- the head 2033H is provided with a heater (not shown) for heating the resin R1.
- this resin molding apparatus reduces the viscosity of resin R1 by heating the mold M with a heater, when opening space S6 to atmospheric pressure. That is, when the resin molding apparatus according to the present modification applies the resin R1 to the mold M in a state where the degree of vacuum of the space S6 is high, when the mold M is cooled by the above-described cooling means and the space S6 is opened to the atmosphere, It has a function of heating the mold M by the heater described above.
- FIG. 32B shows a configuration in which the cap 6524 is detached from the mold M so that the atmosphere around the mold M is made atmospheric by atmospheric pressure, but the present invention is not limited to this.
- the space S6 may be configured to be at atmospheric pressure by enclosing gas in the space S6 in the cap 6524.
- the configuration in which the mold M is heated by the heater has been described, but the heating method is not particularly limited. Further, it is preferable that these cooling means and the above-described heater are provided at the tip of the head 2033H so that the function of cooling the mold M and the function of heating can be used together.
- the resin molding apparatus 2 may include a vibration unit (not shown) that vibrates the mold M in a state where the mold M is held by the head 2033H.
- the resin molding apparatus may vibrate the mold M by the vibration unit in the process of step S202 of the imprint process illustrated in FIG.
- the resin molding apparatus may inject the resin R1 into the concave portion MT of the mold M while vibrating the mold M by the vibration unit.
- the resin molding apparatus may be one that, after injecting the resin R1 into the concave portion MT of the mold M, vibrates the mold M by the vibration unit.
- the resin R1 flows by applying vibration to the resin R1 injected into the recess MT of the mold M
- the air accumulated in the back of the recess MT opens the recess MT as the resin R1 flows. It can be removed by moving to the part side. Therefore, it is possible to prevent air from being accumulated on the back side of the recess MT after the resin R1 is injected into the recess MT of the mold M.
- the resin molding apparatus 2 according to Embodiment 2 may include both the mold heating unit and the vibration unit described above.
- the resin molding apparatus may heat the mold M by the mold heating unit and vibrate the mold M by the vibration unit.
- the resin molding apparatus 6 may include at least one of a mold heating unit and a vibration unit.
- the mold heating unit heats the mold M in a state where the degree of vacuum of the space S6 surrounded by the cap 6524 and the mold M is increased. Then, the resin R1 is injected into the concave portion MT of the mold M.
- the resin molding apparatus vibrates the mold M by the vibration unit while increasing the degree of vacuum in the space S6 surrounded by the cap 6524 and the mold M.
- the resin R1 is injected into the concave portion MT of the mold M. Further, the resin molding apparatus heats the mold M by the mold heating unit and vibrates the mold M by the vibration unit while the degree of vacuum of the space S6 surrounded by the cap 6524 and the mold M is increased. The resin R1 may be injected into the concave portion MT of the mold M.
- the heating of the mold M is effective not only when the resin R1 is injected into the mold M1 in an environment with a relatively high degree of vacuum, but also when the resin R1 is injected into the mold M in the atmosphere. Further, vibrating the mold M is effective not only when the resin R1 is injected into the mold M1 in an environment with a relatively high degree of vacuum, but also when the resin R1 is injected into the mold M in the atmosphere.
- the method of vibrating the mold M is effective in order to prevent air bubbles from being involved when the resin R1 is pressed against the substrate WT. Even if bubbles are included in the pressed resin R1, the resin R1 flows and the bubbles can be discharged by shaking. Further, the resin is pre-applied on the substrate WT, and even when the resin R1 on the mold M and the resin on the substrate WT are in contact with each other, it is more effective because air bubbles are easily taken in the atmosphere.
- the application of the resin to the substrate WT side in advance may be performed in order to reduce the amount of resin required for filling the concave portion MT of the mold M with a differential pressure or to improve the adhesive force with the substrate WT.
- a holding unit 9033 that holds the periphery of the mold M, a dispenser 9033 that applies the resin R2 to the substrate WT, and a stage that supports the substrate WT. 9031 is proposed.
- the holding portion 9033 deflects the central portion of the mold M by applying air pressure to the central portion of the mold M (see arrow AR901 in FIG. 36A).
- the resin molding apparatus moves the stage 9031 so that the unmolded resin R2 preliminarily applied on the substrate WT by the dispenser 9033 is arranged below the mold M. Then, for example, as shown in FIG.
- the resin molding apparatus moves the stage 9031 close to the mold M (see the arrow AR902 in FIG. 36B) while the mold M is bent in the atmosphere. Contact R2. Thereafter, by pressing the mold M against the resin, the resin is molded as shown in FIG. 36C. At this time, the resin comes into contact with the resin from the center of the mold, and since the contact gradually spreads to the outer peripheral part, the bubbles are driven out and the resin is molded.
- the resin R2 may not enter the depth of the concave portion MT and air may be caught. Further, distortion may occur due to the mold M being bent and brought into contact with the resin R2. Even if the mold is pressed from above in vacuum, the resin applied to the lower substrate side must be held with a certain degree of viscosity and cannot fill the bottom of the upper mold recess. Moreover, even if it is applied to the upper mold in advance, it cannot be done because the resin drips. Moreover, above all, particles fall on the substrate and defects due to the biting of the particles are likely to occur.
- the cap 6524 is brought into contact with the mold M via the O-ring 6525 to increase the degree of vacuum in the space S6 between the cap 6524 and the mold M.
- the resin R1 is injected into the concave portion MT of the mold M.
- the resin molding apparatus 6 opens the periphery of the mold M to the atmosphere.
- the resin R1 is depressed by the atmospheric pressure. It is pushed to the back of MT.
- the resin portion can be favorably molded on the substrate WT.
- the resin molding apparatus 6 holds the mold M so that the concave portion MT of the mold M faces upward, the resin R1 is injected into the mold M and imprinted on the substrate WT even when the viscosity of the resin R1 is low. be able to. Therefore, it is also effective to provide the mold with a heating function for reducing the viscosity of the resin.
- the mold is disposed on the lower side, the viscosity of the resin is lowered, and the resin is applied in a vacuum, so that a resin having a high aspect ratio can be molded.
- the degree of vacuum in the space S6 may be increased.
- the degree of vacuum of the space S6 may be increased while the resin R is being injected into the concave portion MT of the mold M.
- the present invention is not limited to this, and the resin may be placed on the mold by a resin placing device different from the resin molding device.
- the resin placing device conveys the mold to the resin molding device.
- the resin molding apparatus molds the resin portion on the substrate by irradiating the resin with ultraviolet rays in a state where the mold in which the resin is injected, which is conveyed from the resin mounting apparatus, is pressed against the substrate.
- the resin placement device 7022 includes a chamber 7201, a dispenser 7052, and a vacuum pump (vacuum source) 7202.
- the dispenser 7052 includes a main body portion 7520, a dispenser drive portion 7521, a nozzle 7522, and a discharge control portion 7523.
- Main body 7520 is movable in both the Z-axis direction and a direction orthogonal to the Z-axis direction.
- An exhaust port 7201 a is provided in part of the chamber 7201.
- the chamber 7201 is made of, for example, metal.
- the head 7203 that supports the mold MB is movable between a resin placement device 7022 and a resin molding device to be described later by a head driving unit (not shown). Further, the mold MB has the same size as the substrate WT in plan view.
- the resin molding apparatus 7021 includes a stage 7204 that supports the substrate WT, and an ultraviolet irradiation unit 53 that is disposed above an opening 7204a provided in the stage 7204.
- 37A to 39B the same reference numerals as those in FIG. 15 are assigned to the same configurations as those in the second embodiment.
- the resin molding apparatus 7021 forms a resin part on the substrate WT by irradiating the resin R1 with ultraviolet rays by the ultraviolet irradiation unit 53 in a state where the mold MB into which the resin R1 is injected is pressed against the substrate WT.
- the resin molding apparatus 7021 includes, for example, a distance measuring unit (not shown) that measures the distance between the formation surface WTf of the substrate WT and the flat surface of the mold MB using laser light at three or more locations of the mold MB. And a mold posture adjusting unit (not shown) for adjusting the posture of the mold MB.
- the mold attitude adjustment unit adjusts the parallelism of the mold MB with respect to the substrate WT and the distance between the flat surface of the mold MB and the formation surface WTf of the substrate WT based on the measurement result of the distance measurement unit.
- the resin mounting device 7022 discharges the gas present in the chamber 7201 to the outside of the chamber 7201 by the vacuum pump 7202 connected to the exhaust port 7201a of the chamber 7201. Increase the degree of vacuum inside.
- the resin placing device 7022 discharges the resin from the dispenser 7052 disposed in the chamber 7201 to the concave portion MT of the mold M in a state where the degree of vacuum in the chamber 7201 is equal to or higher than a preset degree of vacuum.
- the resin mounting device 7022 moves the main body 7520 of the dispenser 7052 in a direction orthogonal to the Z-axis direction (see arrow AR702 in FIG. 37A) and moves in the Z-axis direction (arrow AR701 in FIG. 37A).
- the resin R1 is injected into the plurality of concave portions MT of the mold MB.
- a gap CA may be generated in the back of the concave portion MT of the mold MB.
- the resin mounting device 7022 releases the inside of the chamber 7201 to the atmosphere when the resin R1 is injected into all of the plurality of concave portions MT of the mold MB.
- the resin R1 injected into the concave portion MT of the mold MB is pushed into the depth of the concave portion MT by the atmospheric pressure, and the gap CA generated in the depth of the concave portion MT disappears.
- the mold MB is conveyed to the resin molding apparatus 7021, and as shown in FIG. 38B, the mold MB is disposed below the substrate WT. Thereafter, as shown in FIG.
- the resin molding apparatus 7021 presses the mold MB, in which the resin R2 is injected into the concave portion MT, before being conveyed to the resin molding apparatus 7021 against the substrate WT. Then, as shown in FIG. 39B, the resin molding apparatus 7021 performs batch molding by irradiating the resin R2 with ultraviolet rays from the ultraviolet irradiation unit 52.
- the resin molding apparatus 7021 has a function of performing batch molding in a vacuum, when the aspect ratio of the concave portion MT of the mold MB is high, the resin R2 does not enter the depth of the concave portion MT.
- the mold MB is placed under the dispenser 7052 in the chamber 7201 having a high degree of vacuum of the resin mounting device 7022 at the stage before the mold MB is transferred to the resin molding device 7021 as in the resin molding system according to this modification. It is preferable to inject the resin R2 into the concave portion MT of the mold MB in a state of being disposed on the side.
- a mold heating unit (not shown) for heating the mold MB may be provided in a state where the mold MB is supported by the head 7203.
- a vibration unit (not shown) that vibrates the mold MB in a state where the mold MB is supported by the head 7203 may be provided.
- the resin placement device 7022 has a configuration in which resin is injected into the plurality of concave portions MT of the mold MB using the dispenser 7052, but the resin placement device is limited to a configuration using a dispenser.
- the resin mounting device may be configured to apply the resin R to the mold MB by a printing method using a squeegee blade in the chamber 7201.
- the above-described resin molding apparatus 7021 has a configuration in which the mold MB is pressed against the substrate WT in the atmosphere to mold the resin portion.
- the present invention is not limited to this, and the resin molding apparatus includes a chamber (not shown). The resin part may be formed by pressing the mold MB against the substrate WT in the chamber in a state where the degree of vacuum in the chamber is increased.
- the method of cooling the mold M when the resin R1 is applied to the mold M in a state where the degree of vacuum of the space S6 is high, and heating the mold M when the space S6 is opened to the atmosphere is as follows.
- the present invention is not limited to application to a resin molding apparatus provided with the aforementioned cap 6524.
- the present invention may be applied to the resin mounting device 7022 or the resin molding device 7021 described with reference to FIGS. 37A to 39B.
- the mold MB is cooled in a state where the mold MB is disposed in an environment with a high degree of vacuum.
- the resin R2 is applied to the cooled mold MB in an environment with a high degree of vacuum.
- the periphery of the mold MB is returned to the atmospheric pressure environment, and the mold MB is heated to soften the resin R2 applied to the mold MB.
- the resin R2 is smoothly filled into the recess MT of the mold MB.
- the resin R2 is pressed against the substrate WT.
- the resin R2 is pressed against the substrate WT while the viscosity of the resin R2 is increased by cooling the mold MB again.
- the mold MB has a larger area facing the substrate WT than the mold M described above, and accordingly, the pressure required to press the mold MB against the substrate WT increases. Therefore, when pressing the mold MB against the substrate WT, the pressure at the time of pressing the mold MB against the substrate WT may be reduced by heating the mold MB and reducing the viscosity of the resin R2.
- the resin R1 is placed on the mold M, that is, after the resin R1 is injected into the concave portion MT of the mold M, the mold R is pressed against the substrate WT from below the substrate WT.
- the example of the resin molding apparatus 2 which shape
- the present invention is not limited to this, for example, a resin is previously applied to the surface of the substrate WT on which the resin portion is to be molded, and in the resin molding apparatus, the substrate WT disposed in such a posture that the resin-coated side is the lower side.
- a configuration may be employed in which the resin is irradiated with ultraviolet rays from below while the mold M is pressed against the resin of the substrate WT.
- the resin molding apparatus may be configured to inject the resin into the mold M and then irradiate the resin with ultraviolet rays in a state where the mold M is pressed against the resin from below the substrate WT coated with the resin.
- the shape of the resin portion to be molded on the substrate WT Has the advantage of being stable. Even if the resin molding apparatus includes a chamber (not shown) and the mold MB is pressed against the substrate WT on which the resin layer is formed in the chamber with the degree of vacuum in the chamber being increased. Good. In this case, since almost no gas is present in the recess MT of the mold M, the occurrence of molding defects due to the gas present in the recess MT of the mold M is suppressed.
- the flat surface MF of the mold M and the formation surface WTf of the substrate WT are parallel for each position where the mold M is pressed on the substrate WT.
- the inclination of the mold M may be adjusted so that The resin molding apparatus 2 adjusts the inclination of the mold M by adjusting the inclination angle of the second disk member 334 and the head 2033H fixed thereto with respect to the horizontal plane.
- the resin molding apparatus 2 adjusts the inclination angle of the head 2033H by expanding and contracting the three piezoelectric actuators 333 interposed between the first disk member 332 and the second disk member 334 in the Z-axis direction, respectively. .
- the resin molding apparatus 2 includes, for example, the process of executing the pre-alignment of the mold M in step S204 in the resin molding process described in the second embodiment, or the resin R1 placed in the mold M in step S206 is the substrate WT.
- the tilt of the mold M may be adjusted when performing the process of executing the immersion alignment in a state where it is in contact with the formation surface WTf.
- the three piezo actuators 333 are arranged in the posture (inclination) of the mold M when pressing the mold M against the center of the substrate WT and when pressing the mold M against the peripheral portion of the substrate WT. ).
- the resin molding apparatus may correct the position and orientation of the mold M with respect to the substrate WT in a state where the mold M is in contact with the substrate WT via the resin placed on the mold M.
- the resin molding apparatus is based on the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M, and the distance between the formation surface WTf and the flat surface MF and the formation surface WTf of the flat surface MF. You may adjust at least one of inclination.
- the example of the resin molding apparatus 2 in which the three piezo actuators 333 are interposed between the first disk member 332 and the second disk member 334 has been described.
- the number of piezoelectric actuators interposed between the disk member 334 is not limited to three.
- the resin molding apparatus may have a configuration in which two piezoelectric actuators are interposed between the first disk member 332 and the second disk member 334, or a configuration in which four or more piezoelectric actuators are interposed. Also good.
- the resin molding apparatus 2 is configured so that the flat surface MF of the mold M and the formation surface WTf of the substrate WT are parallel for each position where the mold M is pressed on the substrate WT. Adjust the slope of M.
- the resin portion can be molded well.
- the bending margin may be different between the central portion and the outer peripheral portion of the substrate WT.
- the resin molding apparatus 2 adjusts the inclination of the mold M between the central portion and the outer peripheral portion of the substrate WT, thereby applying a uniform pressure to the entire mold M in both.
- the mold M can be pressed against the resin R2.
- the arrangement of the ultraviolet irradiation unit 53 is not limited to this, and the substrate WT may be arranged below the stage 31 when the substrate WT is a substrate opaque to ultraviolet rays.
- the ultraviolet irradiation unit 53 irradiates the resin part R with ultraviolet rays from below the substrate WT.
- An example of the substrate opaque to ultraviolet rays is a Si substrate.
- the head driving unit 36 can only move the bonding unit 33 (2033) in the Z-axis direction and rotate around the axis BX.
- the configuration is not limited thereto, and the head drive unit 36 may be configured to move the bonding unit 33 (2033) in the X-axis direction or the Y-axis direction.
- the head driving unit 36 after receiving the chip CP from the chip transport unit 39, the head driving unit 36 has the bonding unit 33 (2033) at a position where the head 33 H (2033 H) and the part on the substrate WT where the chip CP is mounted face each other. ) May be moved in the X-axis direction or the Y-axis direction.
- the present invention is not limited to this, and one first imaging unit 35a is movable in a plane orthogonal to the Z-axis direction, and the first imaging unit 35a is aligned while moving in a plane orthogonal to the Z-axis direction.
- the image Ga and Gb including the marks MC1a and MC1b may be sequentially photographed.
- the configuration in which the images including the alignment marks MC1a, MC1b, MC2a, and MC2b provided on the substrate WT and the chip CP are captured by the two first imaging units 35a and 35b has been described.
- the configuration is not limited thereto, and for example, a configuration in which two imaging units (not shown) are arranged above the stage 31 in addition to the first imaging units 35a and 35b may be used.
- an image including the alignment marks MC1a and MC1b of the chip CP is captured by the two first imaging units 35a and 35b
- an image including the alignment marks MC2a and MC2b of the substrate WT is captured by the other two imaging units. It may be.
- the cutting mechanism 111 projects the needle 111a vertically downward ( ⁇ Z direction) from the vertical upper side (+ Z direction) of the dicing tape TE to push the chip CP downward vertically ( ⁇ Z direction).
- the example of the chip supply unit 11 that supplies the above has been described.
- the configuration of the chip supply unit 11 is not limited to this.
- the chip supply unit may be configured to supply the chip CP by peeling the chip CP from the dicing tape TE by sucking the dicing tape TE upward.
- the chip supply unit supplies the chip CP by peeling the chip CP from the dicing tape TE by reducing the adhesive force of the dicing tape TE by irradiating the dicing tape TE with the chip CP attached thereto with ultraviolet rays. It may be.
- the first imaging units 35a and 35b use the reflected light of illumination light (for example, infrared light) emitted from the light source of the coaxial illumination system, respectively, to align the alignment marks MC1a and MC1b of the chip CP. And an example of acquiring an image including the alignment marks MC2a and MC2b of the substrate WT.
- the present invention is not limited to this.
- the alignment marks MC1a, MC1b of the chip CP and the substrate are transmitted using light transmitted through the chip CP from a light source provided on the side opposite to the first imaging units 35a, 35b. It may be configured to acquire an image including the WT alignment marks MC2a and MC2b.
- the second imaging unit 41 arranged vertically above the substrate WT uses the coaxial light of the first imaging units 35a and 35b incident on the lower side of the chip CP to align the alignment marks MC1a, MC1b, MC2a, MC2b.
- the structure which acquires the image containing this may be sufficient.
- the first imaging units 35a and 35b acquire images including the alignment marks MC1a, MC1b, MC2a, and MC2b by using the coaxial light emitted from the second imaging unit 41 disposed vertically above the substrate WT. It may be configured to.
- the coaxial light emitted from the first imaging unit 35a, 35b or the second imaging unit 41 may be visible light.
- the configuration in which the first imaging units 35a and 35b acquire images including the alignment marks MC1a and MC1b of the chip CP and the alignment marks MC2a and MC2b of the substrate WT has been described.
- the present invention is not limited to this.
- the first imaging units 35a and 35b acquire images including the alignment marks MC1a and MC1b of the chip CP
- the second imaging unit 41 includes images including the alignment marks MC2a and MC2b of the substrate WT. It may be the structure which acquires.
- the coaxial light emitted from the first imaging units 35a and 35b or the coaxial light emitted from the second imaging unit 41 does not pass through the stacked chips CP as in the case of stacking the chips CP.
- the alignment marks MC1a, MC1b, MC2a, MC2b can be acquired.
- the alignment marks MC1a, MC1b and the alignment marks MC2a, MC2b can be individually recognized by each camera, the time required to recognize the alignment marks MC1a, MC1b, MC2a, MC2b is reduced.
- the substrate WT side does not need to recognize the two alignment marks MC2a and MC2b every time, and each time the substrate WT is replaced, the two alignment marks MC2a and MC2b are used only once to shift the ⁇ direction of the substrate WT. Recognize it. This is because the chip mounting system already recognizes the shift amount in the ⁇ direction of the substrate WT when the chip CP is mounted on one substrate WT, so that it is sufficient to recognize one alignment mark. This is because the throughput is also improved.
- the second imaging unit 41 may acquire an image including the alignment marks MC1a and MC1b of the chip CP and the alignment marks MC2a and MC2b of the substrate WT.
- the alignment marks MC1a and MC1b of the chip CP and the alignment marks MC2a and MC2b of the substrate WT are made the same second using infrared light.
- the image pickup unit 41 recognizes the set of the alignment marks MC1a, MC2a, alignment marks MC1b, MC2b at the same time with a single capture without moving the focus axis, thereby accurately detecting the positional deviation between the chip CP and the substrate WT.
- the chip mounting system 1 calculates the positional deviation of the chip CP with respect to the substrate WT while the chip CP and the substrate WT are in contact with each other, and corrects the position of the chip CP based on the calculated positional deviation amount. It may be a configuration. In this case, the chip mounting system 1 calculates the positional deviation of the chip CP with respect to the substrate WT in a state where the chip CP and the substrate WT are in contact, and then separates the chip CP from the substrate WT and then corresponds to the amount of positional deviation. The chip CP is moved in the direction opposite to the displacement direction. Thereafter, the chip mounting system 1 brings the chip CP into contact with the substrate WT again. According to this configuration, the chip CP can be mounted on the substrate WT with high accuracy.
- the bonding apparatus 30 measures the distance between the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP at three or more locations on the bonding surface (flat surface) CPf of the chip CP.
- a distance measuring unit (not shown) may be provided.
- the distance measuring unit is, for example, a laser light source (not shown) disposed at a plurality of locations on the side of the head 33H, and a light receiving unit (not shown) that receives laser light emitted from each of the plurality of laser light sources and reflected by the substrate WT. Z)).
- the head driving unit 36 attaches the head 33H holding the chip CP to the substrate WT based on the distance measured by the distance measuring unit. May be close to the stage 31 that holds
- the three piezoelectric actuators 333 are arranged between the mounting surface WTf of the substrate WT and the chip CP based on the distance between the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP measured by the distance measuring unit. And / or the inclination of the chip CP with respect to the mounting surface WTf of the substrate WT may be adjusted.
- the bonding apparatus 30 has a prism 7737 that can be disposed between the substrate WT and the chip CP, for example, as shown in FIG. 41A, and two distance measurements that are disposed on the sides of the prism 7737.
- the distance measuring unit 77381 may include a laser beam source that emits laser light toward the prism 7737, and is reflected by the mounting surface WTf of the substrate WT via the prism 7737. A light receiving portion for receiving the returning light.
- the distance measuring unit 77382 includes a laser light source that emits laser light toward the prism 7737, and a light receiving unit that receives the light reflected by the bonding surface CPf of the chip CP and returning through the prism 7737. .
- the bonding apparatus 30 includes a distance between the prism 7737 measured by the distance measuring unit 77381 and the mounting surface WTf of the substrate WT, and a bonding surface CPf between the prism 7737 and the chip CP measured by the distance measuring unit 77382.
- the distance between the substrate WT and the chip CP is calculated from the distance between and the distance W77 between the two distance measuring units 77381 and 77382.
- the bonding apparatus 30 adjusts at least one of the distance between the mounting surface WTf of the substrate WT and the chip CP and the inclination of the chip CP with respect to the mounting surface WTf of the substrate WT based on the calculated distance.
- the bonding apparatus 30 may include a distance measuring unit that measures the distance between the substrate WT and the tip of the head 33H as shown in FIG. 41B, for example.
- the chip mounting system includes a thickness measuring unit (not shown) that measures the thickness of the chip CP in advance, and the bonding apparatus 30 mounts the mounting surface WTf of the substrate WT measured by the distance measuring unit and the head 33H. The distance between the mounting surface WTf of the substrate WT and the chip CP and the inclination of the chip CP with respect to the mounting surface WTf based on the distance obtained by subtracting the thickness of the chip CP from the distance between the tip end of the substrate CP And at least one of them.
- the distance measuring unit is configured so that the substrate 31 is not held by the stage 31 and the tip CP is not held by the head 33H. The distance between the two may be measured.
- the chip mounting system includes a thickness measuring unit (not shown) that measures in advance the thickness of the substrate WT and the thickness of the chip CP, and the bonding apparatus 30 has the stage 31 and head measured by the distance measuring unit.
- the distance between the mounting surface WTf of the substrate WT and the chip CP and the substrate of the chip CP is adjusted.
- the measurement unit for measuring the distance between the chip and the substrate may be used if the thickness is known in advance even if it is not in the chip mounting system unit.
- a water supply unit (not shown) may be provided that causes water to adhere to the bonding surface CPf of the chip CP by supplying water to the bonding surface CPf of the chip CP.
- the water supply unit waits until the chip CP is held by the head 33 ⁇ / b> H of the bonding device 30 and contacts the mounting surface WTf of the substrate WT. In the meantime, water is supplied to the joint surface CPf of the chip CP.
- the water supply unit is provided, for example, at a portion facing the bonding surface CPf of the chip CP in a state where the chip CP is held in the chip holding unit 391a of the chip transport unit 39, and is a water discharge unit (not shown) that sprays water onto the bonding surface CPf. May be included).
- the water supply unit may be provided in the chip supply device 10.
- the water supply unit is transferred from the chip supply unit 11 to the arm 1311 of the chip reversing unit 131, and the bonding surface CPf of the chip CP in a state where the bonding surface CPf is held by the arm 1311 in a posture in which the bonding surface CPf faces vertically upward. What is necessary is just to have a water discharge part (not shown) which sprays water.
- the cleaning unit may include a cleaning unit that removes particles attached to the bonding surface Cpf before supplying water to the bonding surface CPf of the chip CP.
- a cleaning unit that removes particles attached to the bonding surface Cpf before supplying water to the bonding surface CPf of the chip CP.
- a configuration in which a gas such as nitrogen or helium is blown a configuration in which water in a state where ultrasonic waves or megasonic is applied, or a configuration in which particles adhering to the joint surface CPf are mechanically scraped are exemplified.
- the water supply unit is configured to spray water in a state where the above-described ultrasonic waves, megasonics, and the like are applied, the water supply unit has both functions of supplying water to the joint surface CPf and removing particles.
- the water supply unit may have a water discharge unit (not shown) provided on the stage 31 of the bonding apparatus 30.
- a water discharge unit (not shown) provided on the stage 31 of the bonding apparatus 30.
- the stage 31 is driven so that the water discharge portion is positioned above the chip CP, and then the water discharge is performed. Water may be sprayed from the portion to the bonding surface CPf of the chip CP.
- a water supply unit 7852, a cleaning head 7856, and a camera 7857 are supported by a support unit 7855 disposed above the stage 7831 in the bonding apparatus 30 and are movable in the vertical direction. May be provided.
- This support portion 7855 is freely movable in the vertical direction and a horizontal plane perpendicular to the vertical direction.
- the stage 7831 is moved immediately before the chip CP is mounted on the substrate WT (see the arrow AR781 in FIG. 42), so that the substrate WT is positioned above the chip CP. Evacuate from.
- the stage 7831 is moved so that a through-hole 7831 a provided in the stage 7831 is positioned vertically below the water supply unit 7852.
- the water supply unit 7852 moves the nozzle 78522 vertically downward to pass through the through-hole 7831a (see the arrow AR782 in FIG. 42), thereby bringing the tip of the nozzle 78522 closer to the bonding surface CPf of the chip CP. Water is sprayed onto the joint surface CPf of the chip CP.
- the cleaning head 7856 moves the stage 7831 so that the through-hole 7831a is positioned, and then moves the cleaning head 7856 vertically downward to be inserted into the through-hole 7831a, thereby leading the tip CP to the bonding surface of the chip CP. Particles on the bonding surface CPf of the chip CP are removed close to CPf.
- the water supply unit 7852 for supplying water to the bonding surface CPf of the chip CP and the cleaning head 7856 are provided above the stage 7831.
- the water supply unit and the cleaning head are provided. Is not limited to this configuration.
- the chip transport unit 10039 includes a plate 10391 provided with a chip holding unit 391a, a plate 10391 provided with a water supply unit 10391c, and a plate 10391 provided with a cleaning unit 10391b. It may have.
- the cleaning unit 10391b has a nozzle that discharges a gas such as nitrogen or helium
- the water supply unit 10391c has a nozzle that sprays water in a state where, for example, ultrasonic waves or megasonic is applied.
- the chip transport unit 10039 shown in FIG. 43 does not have the plate 10391 provided with the cleaning unit 10391b, the plate 10391 provided with the chip holding unit 391a, and the plate provided with the water supply unit 10391c. 10391 may be included.
- a water supply unit (not shown) and a cleaning unit (not shown) are provided at the tip of the plate 10391 provided with the chip holding unit 391a at a position separated from the chip holding unit 391a in the rotation direction of the plate 10391. It may be a configured.
- an operation of retracting the substrate WT from the upper side of the chip CP by moving the stage 7831 becomes unnecessary, so that the bonding surface CPf of the chip CP is formed.
- This is preferable in terms of production tact because particle removal and water supply to the joint surface CPf can be performed in a short time.
- the chip mounting system supplies water to the bonding surface CPf of the chip CP or adheres to the bonding surface CPf on the opposite side of the head 33H separately from the chip transport unit 39.
- the configuration may include a supply unit 11039 that blows gas onto the joint surface Cpf in order to remove particles.
- the supply unit 11039 includes a plurality of plates 11391 provided with nozzles 11391a for blowing water or gas at the tip, and a plate driving unit 11392 that rotationally drives the plurality of plates 11391 simultaneously. According to this configuration, as shown in FIG.
- the tip of the plate 391 of the chip transport unit 39 and the tip of the plate 11391 of the supply unit 11039 rotate in synchronization with each other (arrow AR1 in FIG. 45). , AR111), and alternately moves above the head 33H.
- a series of operations including the operation of transferring the chip CP to the head 33H and the operation of supplying water to the bonding surface CPf of the chip CP held by the head 33H or the operation of blowing the gas is efficiently performed.
- the chip transport unit 39 is provided with a vacuum path for sucking the chip CP and a vacuum break path for stopping the suction, the chip transport unit 39 is further provided with a bonding surface CPf of the chip CP.
- the supply unit 11039 for supplying water or blowing gas is provided separately from the chip transfer unit 39.
- the chip mounting system may have a configuration in which, for example, the supply unit 11039 supplies water to the bonding surface CPf of the chip CP and sprays gas to the bonding surface CPf for cleaning.
- the chip mounting system may be configured such that gas is sprayed to the bonding surface of the chip CP for cleaning in the chip transport unit 39 and water is supplied to the bonding surface CPf in the supply unit 11039.
- the chip mounting system may be configured such that the chip transport unit 39 supplies water to the bonding surface CPf of the chip CP and the supply unit 11039 sprays gas to the bonding surface CPf for cleaning. Good.
- tip conveyance part 39 and the supply part 11039 is not limited to the above-mentioned arrangement
- the substrate WT after the mounting surface WTf of the substrate WT is activated by exposing it to nitrogen plasma or the like, water can be supplied to the mounting surface WTf by performing a water cleaning process using a spin coater.
- the substrate WT is rotated and sprayed with water to which vibrations such as ultrasonic waves are applied, and then spin-dried.
- vibrations such as ultrasonic waves are applied
- spin-dried Thereby, particles adhering to the mounting surface WTf of the substrate WT are removed and water can be adhered to the mounting surface WTf.
- the chip CP is attached to the dicing tape TE, water is not directly supplied to the joint surface CPf.
- the hydrophilization treatment apparatus 60 is a system in which surface activation is performed by beam irradiation even if the dicing tape TE is present, the impurity ions generated from the dicing tape TE are activated without adhering to the mounting surface Wtf of the substrate WT.
- the chip CP is attached to the dicing tape TE, it is impossible to perform the water cleaning process on the joint surface CPf. Therefore, there is a possibility that particles cannot be removed from the bonding surface CPf of the chip CP, and water sufficient for bonding to the substrate WT cannot be attached to the bonding surface CPf.
- the water supply unit sprays water on the joint surface CPf of the chip CP supplied from the chip supply unit 11.
- water sufficient for bonding to the substrate WT can be adhered to the bonding surface CPf of the chip CP, so that a problem at the time of temporary bonding of the chip CP to the substrate WT can be prevented and the substrate WT of the chip CP at the time of bonding can be prevented.
- the provisional bonding smoothly proceeds due to the presence of water between the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP, and as a result, voids are unlikely to enter between the substrate WT and the chip CP.
- the chip CP can be moved relative to the substrate WT while the chip CP is in contact with the substrate WT via water. In this case, after the position of the chip CP with respect to the substrate WT is determined, the force that presses the chip CP against the substrate WT is increased, and the water interposed between the chip CP and the substrate WT is pushed out to push the chip CP to the substrate WT. Can be temporarily joined.
- the bonding apparatus may include a blower that discharges nitrogen together with the water supply unit.
- the blower is, for example, at a position adjacent to the joint surface CPf of the chip CP in a state where the chip CP is held in the chip holding unit 391a of the chip transport unit 39, at a position adjacent to the water discharge unit in the rotation direction of the chip holding unit 391a. It may be provided. Or in the bonding apparatus as shown in FIG. 42, the structure which the washing
- the cleaning head moves the blower nozzle vertically downward with the stage 7831 moved so that the through-hole 7831a provided in the stage 7831 is positioned vertically below the cleaning head. Are inserted through the through holes 7831a.
- the bonding apparatus removes particles adhering to the bonding surface CPf by discharging nitrogen from the blower to the bonding surface CPf before supplying water to the bonding surface CPf of the chip CP from the water supply unit. Can do.
- a liquid such as a weak acid may be added to the bonding surface CPf of the chip CP and supplied in addition to water.
- the substrate WT and the chip CP are satisfactorily added by spraying a liquid such as weak acid together with water on the bonding surface CPf of the chip CP. Can be joined.
- the chip supply unit 11 supplies the chip CP in a state of being affixed to the dicing tape TE. It may be configured to supply the chip CP. Alternatively, the chip supply unit may supply chips CP one by one.
- the chip supply unit is not limited to one that is separate from the bonding apparatus.
- the chip supply unit includes a suction holding mechanism (not shown) that holds and holds at least one chip CP on the stage 31. May be provided. In this case, the chip CP held by the suction holding mechanism is supplied to the head 33H.
- the chip supply unit 11 when the chip supply unit 11 holds the chip CP with the bonding surface CPf of the chip CP facing vertically upward from the vertical lower side of the dicing tape TE, in this case, the chip supply unit 11 performs the dicing.
- the tape TE a special sheet in which impurities do not adhere to the bonding surface CPf of the chip CP is used, and the dicing substrate WC after the hydrophilic treatment is performed and the particles are selectively removed, the bonding surface CPf side is the dicing tape TE side.
- the one affixed to the dicing tape TE is used.
- the chip mounting system may be configured so that the chip transfer unit 123 can directly receive the supply of the chip CP from the chip supply unit 11 without using the chip inversion unit 131.
- the substrate WT is transparent, and the resin on the mold M is cured by irradiating ultraviolet light from above the substrate WT, but this is not restrictive.
- the mold M may be formed of a material that transmits ultraviolet light, such as transparent glass, and may be irradiated with ultraviolet light from vertically below the mold M.
- the distance measuring unit may also be measured by being arranged vertically below the mold M when the mold M is formed of a material such as transparent glass.
- the resin molding apparatus is configured to perform alignment using an infrared light transmission camera as the imaging unit 2041. Also good.
- the material of the resin part R is not limited to this, and may be formed from, for example, a thermosetting resin or a thermoplastic resin.
- the resin molding apparatus may include a heating unit (not shown) that heats the resin part R in a state where the mold M is pressed against the resin part R instead of the ultraviolet irradiation unit.
- the heating unit for example, an infrared heater that embeds a heater in the mold holding unit or irradiates infrared rays from above the substrate WT can be employed. According to this configuration, even when the resin portion R is formed of a thermosetting resin, it is possible to form a cured resin portion on the substrate WT.
- the resin forming the resin portion R is a thermosetting resin or a thermoplastic resin
- the resin molding apparatus presses the mold M against the substrate WT the resin placed on the mold M by the heating unit described above.
- the structure which is made into the state softened by heating may be sufficient.
- the mold M is heated to a temperature in a preset temperature range in which the resin forming the resin portion R is softened while the mold M is pressed against the resin portion R.
- the pressure to be applied can be reduced. Therefore, since the stage 2031 is prevented from being bent during the molding of the resin portion R, the molding accuracy of the resin portion R can be increased.
- the distance measurement unit 511 measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M by irradiating laser light from above the substrate WT and the mold M.
- the distance measuring unit 511 measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M by irradiating laser light from below the substrate WT and the mold M. It may be configured to.
- the distance measurement unit 511 measures the distance between the formation surface WTf of the substrate WT and the flat surface MF of the mold M using laser light.
- the distance measuring unit 511 when a part of the resin portion R protrudes on the flat surface MF between the substrate WT and the mold M, the distance measuring unit 511 has the resin portion R between the substrate WT and the mold M. It will be measured in a state where a part of is interposed. Then, the laser light is attenuated by being absorbed by the resin portion R interposed between the substrate WT and the mold M, and the reflected light may not be detected well.
- the distance measuring unit 511 may measure the distance between the substrate WT and the mold M in a region where the resin portion R is not interposed between the substrate WT and the stepped portion MS of the mold M. In this case, since the laser light is suppressed from being absorbed by the resin portion R interposed between the substrate WT and the mold M, the distance between the substrate WT and the mold M can be accurately measured.
- the alignment marks MC1a and MC1b of the chip CP are provided on the bonding surface CPf side.
- the present invention is not limited thereto, and for example, the alignment marks MC1a and MC1b are connected to the bonding surface CPf side of the chip CP. May be provided on the opposite surface.
- the alignment marks MM1a and MM1b are provided on the flat surface MF of the mold M.
- the present invention is not limited thereto, and for example, the alignment marks MM1a and MM1b are on the flat surface MF side in the mold M. It may be provided on the opposite surface.
- alignment marks MM1a and MM1b may be provided on the stepped portion MS of the mold M.
- a mold M made of metal for example, is pressed against the transparent substrate WT from below, and the resin R1 is cured by irradiating ultraviolet rays from above the substrate WT by the ultraviolet irradiation unit 52.
- the present invention is not limited to this.
- the substrate WT is a non-transparent substrate such as Si
- the mold M may be formed of a transparent material and irradiated with ultraviolet rays from below the mold M.
- the alignment mark may be captured by the imaging unit from above the Si substrate.
- the example in which the gap between the flat surface MF of the mold M and the formation surface WTf of the substrate WT is directly measured by a laser has been described, but this is not a limitation.
- the head 2033H that supports the mold M is attached to the head 2033H.
- a reflection mirror may be provided to measure the distance between the flat surface MF of the mold M and the formation surface WTf of the substrate WT using laser light reflected by the reflection mirror.
- the distance between the reflecting mirror and the flat surface MF of the mold M is measured in advance, and the reflecting mirror and the mold M measured in advance from the distance between the reflecting mirror and the formation surface WTf of the substrate WT are measured.
- the distance between the flat surface MF of the mold M and the formation surface WTf of the substrate WT may be calculated by subtracting the distance between the flat surface MF.
- a reflecting mirror may be provided on the stage 2033 that supports the substrate WT.
- Embodiment 2 the example in which the resin R1 is injected into the concave portion MT of the mold M has been described, but the present invention is not limited to this.
- a resin may be applied in advance to the formation surface WTf of the substrate WT.
- the recess can be compensated with the resin applied to the formation surface WTf of the substrate WT.
- the adhesion between the substrate WT and the resin R1 is increased. Note that the resin may be applied only to the formation surface WTf of the substrate WT.
- Embodiment 2 although resin molding with a high aspect ratio is described, the present invention is not limited to this. For example, even when a molded product having a large film thickness is molded, this method is suitable because bubbles are likely to accumulate at the bottom. As a molded product having a large film thickness, for example, there is a lens, and there is a case where a lens is resin-molded on a glass wafer.
- the present invention is not limited to this, and measurement is performed using interference light of reflected light of the laser light, for example. A method may be adopted. In this case, the measurement accuracy is improved because it is not affected by temperature fluctuations of the mold M or the substrate WT. Further, at least one of the substrate WT and the mold M may be formed of a material that transmits laser light.
- the present invention is not limited to this.
- a distance measuring sensor such as a photo sensor or a magnetic sensor may be used. Good. Or you may measure the distance between the mold M and the board
- thermosetting resin the resin softens in a preset temperature range lower than the temperature at which the resin is cured. Further, even if the temperature is set in advance to be equal to or higher than the curing temperature of the resin, it softens once during the curing. In the case of a thermoplastic resin, the resin is softened by heating to increase its temperature.
- the configuration in which the head driving unit 36 raises the head 2033H toward the substrate WT to bring the head 2033H close to the stage 2031 and press the mold M from the vertically lower side of the substrate WT has been described.
- the present invention is not limited to this.
- the stage 2031 is moved vertically downward after the head 2033H is opposed to the position where the resin portion R is formed on the substrate WT, thereby bringing the stage 2031 closer to the head 2033H and the vertical of the substrate WT.
- the structure provided with the stage drive part (not shown) which presses the mold M from the downward direction may be sufficient.
- Examples of the resin molding apparatus according to the embodiment include a nanoimprint apparatus that performs fine resin molding.
- the present application includes Japanese Patent Application No. 2017-021953 filed on Feb. 9, 2017, International Application PCT / JP2017 / 040651, filed on Nov. 10, 2017, Jan. 18, 2018. Based on the international application PCT / JP2018 / 001467 filed in In the present specification, the specification of Japanese Patent Application No. 2017-021953, the scope of claims and the whole drawing, the specification of International Application PCT / JP2017 / 040651, the whole range of claims and the drawing and the International Application PCT / JP2018 / 001467, the claims and the drawings as a whole.
- the present invention is suitable for manufacturing, for example, a CMOS image sensor, a memory, an arithmetic element, and a MEMS.
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Abstract
Description
基板に部品を実装する部品実装システムであって、
前記部品を供給する部品供給部と、
前記基板における前記部品が実装される実装面が鉛直下方を向く姿勢で前記基板を保持する基板保持部と、
鉛直下方から前記部品を保持するヘッドと、
前記部品を保持する前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の前記実装面に前記部品を実装するヘッド駆動部と、を備える。
基板に対してモールドを押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂成形装置であって、
前記基板における樹脂部を形成する形成面が鉛直下方を向く姿勢で前記基板を保持する基板保持部と、
鉛直下方から前記モールドを保持するヘッドと、
前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の鉛直下方から前記モールドを押し付けるヘッド駆動部と、
前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂硬化部と、を備える。
モールドに樹脂を載置する樹脂載置装置であって、
前記モールドが内側に配置されるチャンバと、
前記チャンバ内に存在する気体を排気することにより前記チャンバ内の真空度を高める真空源と、
前記モールドに樹脂を吐出する樹脂吐出部と、
前記真空源により前記チャンバ内の真空度が高められた状態で、前記樹脂吐出部により前記モールドに樹脂を吐出させた後、前記モールドの周囲を大気圧環境下にする際、前記モールドを加熱することにより前記モールドに載置された前記樹脂の温度を上昇させるモールド加熱部と、を備える。
基板に部品を実装する部品実装方法であって、
部品供給部が、前記部品を供給する部品供給ステップと、
基板保持部が、前記基板における前記部品が実装される実装面が鉛直下方を向く姿勢で前記基板を保持する基板保持ステップと、
ヘッドが、鉛直下方から前記部品を保持する部品保持ステップと、
前記ヘッドと前記基板保持部とを近づけることにより前記基板の前記実装面に前記部品を実装する部品実装ステップと、を含む。
基板に対してモールドを押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂成形方法であって、
基板保持部が、基板における樹脂部を形成する形成面が鉛直下方を向く姿勢で前記基板を保持する基板保持ステップと、
ヘッドが、鉛直下方から前記モールドを保持するモールド保持ステップと、
ヘッド駆動部が、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドと前記基板保持部とを近づけて前記基板の鉛直下方から前記モールドを押し付けるモールド押し付けステップと、
樹脂硬化部が、前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂硬化ステップと、を含む。
以下、本発明の実施の形態に係る部品実装システムであるチップ実装システムについて、図面を参照しながら説明する。
本実施の形態に係る樹脂成形装置は、紫外線硬化樹脂からなる樹脂が載置された型部材(以下、「モールド」と称する。)を基板に押し付けた状態で紫外線を照射して樹脂部を硬化させるシステムである。この樹脂成形装置を使用することにより、基板上に樹脂から形成された微細な構造を作製することができる。
以上、本発明の各実施の形態について説明したが、本発明は前述の実施の形態の構成に限定されるものではない。例えば、実施の形態1に係るチップ実装システム1について、ステージ31の上方に基板WTおよびチップCPを透過する光を放射する光源が配置された構成であってもよい。この場合、第1撮像部35a、35bは、ステージ31上方に配置された光源から放射され基板WT、チップCPを透過した透過光を用いてアライメントマークMC1a、MC1b、MC2a、MC2bを含む画像を取得するようにすればよい。また、実施の形態2に係る樹脂成形装置2についても、ステージ2031の下方に基板WTおよびモールドMを透過する光を放射する光源が配置された構成であってもよい。この場合、第1撮像部35a、35bは、ステージ31下方に配置された光源から放射され基板WT、モールドMを透過した透過光を用いてアライメントマークMM1a、MM1b、MM2a、MM2bを含む画像を取得するようにすればよい。
Claims (59)
- 基板に部品を実装する部品実装システムであって、
前記部品を供給する部品供給部と、
前記基板における前記部品が実装される実装面が鉛直下方を向く姿勢で前記基板を保持する基板保持部と、
鉛直下方から前記部品を保持するヘッドと、
前記部品を保持する前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の前記実装面に前記部品を実装するヘッド駆動部と、を備える、
部品実装システム。 - 前記部品供給部は、
シートに貼着されたダイシングされた基板であるダイシング基板を、前記シートが前記ダイシング基板の鉛直上方に位置する姿勢で保持するシート保持部と、
前記ダイシング基板を構成する部品を、前記シートにおける鉛直上方側から鉛直下方へ切出すことにより供給する切出機構と、を有する、
請求項1に記載の部品実装システム。 - 前記部品供給部から供給される前記部品を前記ヘッドに前記部品を受け渡す受け渡し位置まで搬送する部品搬送部を更に備える、
請求項1または2に記載の部品実装システム。 - 前記部品搬送部は、前記部品の周部を、前記部品における前記基板に実装される側を鉛直上方に向けた状態で上面側を保持して前記部品を搬送する、
請求項3に記載の部品実装システム。 - 前記部品供給部から供給される部品の上下を反転させる部品反転部と、
前記部品反転部から上下反転した前記部品を受け取り前記部品搬送部へ渡す部品受け渡し部と、を更に備え、
前記部品搬送部は、
一端部に前記部品を保持する部品保持部が設けられ、前記部品供給部と前記ヘッドとの間に位置する他端部を基点として一端部が旋回する偶数個のプレートを有し、
前記偶数個のプレートのうちのいずれか1つの一端部が鉛直方向において前記ヘッドと重複する第1状態において、前記ヘッド駆動部による前記ヘッドに保持された部品の前記基板への実装と、前記部品供給部から前記部品反転部への部品の供給と、前記部品受け渡し部から前記部品搬送部への部品の受け渡しと、が実行され、
前記偶数個のプレートの一端部が鉛直方向において前記ヘッドと重複しない第2状態において、前記ヘッド駆動部による前記基板への前記部品の実装と、前記部品反転部による前記部品の反転と、前記部品受け渡し部による前記部品反転部からの前記部品の受け取りと、が実行される、
請求項4に記載の部品実装システム。 - 前記プレートは、
前記部品における前記基板に実装される側に水を供給することにより前記部品における前記基板に実装される側に水を付着させる水供給部と、前記部品における前記基板に実装される側を洗浄するクリーニング部と、の少なくとも一方 を有する、
請求項5に記載の部品実装システム。 - 前記部品が前記基板における前記部品が実装される位置に配置された状態で、前記部品の鉛直下側から、前記部品の第1アライメントマークを撮像する第1撮像部を更に備える、
請求項1乃至6のいずれか1項に記載の部品実装システム。 - 前記部品が前記基板における前記部品が実装される位置に配置された状態で、前記基板の鉛直上方から、前記基板の第2アライメントマークを撮像する第2撮像部を更に備える、
請求項1乃至7のいずれか1項に記載の部品実装システム。 - 前記基板と前記部品とが接触した状態で、前記部品の第1アライメントマークと前記基板の第2アライメントマークとを撮像して得られる画像から、前記基板と前記部品との相対位置誤差を算出し、前記相対位置誤差に応じて、前記ヘッド駆動部および前記基板保持部に、前記基板に対する前記部品の位置および姿勢を補正させる制御部を更に備える、
請求項7または8に記載の部品実装システム。 - 前記ヘッド駆動部は、前記部品を保持する前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の前記実装面に前記部品を接触させることにより前記部品を前記基板に面接合させる、
請求項1乃至9のいずれか1項に記載の部品実装システム。 - 前記基板の前記実装面および前記部品における前記基板に実装される側を親水化処理する親水化処理装置を更に備え、
前記ヘッド駆動部は、前記親水化処理装置により親水化処理された前記基板の前記実装面に前記部品を接触させることにより前記部品を前記基板に接合させる、
請求項10に記載の部品実装システム。 - 前記部品における前記基板に実装される側に少なくとも水を供給することにより前記部品における前記基板に実装される側に少なくとも水を付着させる水供給部を更に備え、
前記水供給部は、前記部品が前記部品供給部から供給された後、前記部品が前記ヘッドに保持されて前記基板の前記実装面に接触するまでの間に、前記部品における前記基板に実装される側に水を供給する、
請求項10または11に記載の部品実装システム。 - 前記部品における前記基板に実装される側を洗浄するクリーニング部を更に備え、
前記クリーニング部は、前記部品が前記部品供給部から供給された後、前記部品が前記ヘッドに保持されて前記基板の前記実装面に接触するまでの間に、前記部品における前記基板に実装される側を洗浄する、
請求項12に記載の部品実装システム。 - 一端部に前記水供給部と前記クリーニング部との少なくとも一方が設けられ、他端部を基点として一端部が旋回する複数のプレートを有する供給部を更に備える、
請求項13に記載の部品実装システム。 - 前記部品は、直方体状であり、前記基板に接合される接合面の外周部に形成された切欠部を有し、
前記部品搬送部は、吸着部と、前記吸着部の周囲に突設され突出量が前記切欠部の前記接合面に直交する方向における高さよりも大きい突出部と、を有する部品保持部を有し、
前記部品保持部は、前記突出部の先端部を前記切欠部に当接させた状態で、前記吸着部により前記部品を吸着することにより、前記部品を保持する、
請求項3乃至6のいずれか1項に記載の部品実装システム。 - 前記実装面と前記部品との間の距離と前記部品の前記実装面に対する傾きとの少なくとも一方を調整する部品姿勢調整部を更に備える、
請求項1乃至15のいずれか1項に記載の部品実装システム。 - 前記基板の前記実装面と、平坦面を有する前記部品の前記平坦面と、の間の距離を測定する距離測定部を更に備え、
前記ヘッド駆動部は、前記距離測定部により測定された距離に基づいて、前記部品を保持する前記ヘッドを、前記基板を保持する前記基板保持部に近づける、
請求項16に記載の部品実装システム。 - 前記距離測定部は、前記平坦面における3つ以上の箇所において、前記実装面と前記平坦面との間の距離を測定し、
前記部品姿勢調整部は、前記距離測定部により測定された前記実装面と前記平坦面との間の距離に基づいて、前記実装面と前記部品との間の距離と前記部品の前記実装面に対する傾きとの少なくとも一方を調整する、
請求項17に記載の部品実装システム。 - 前記部品姿勢調整部は、前記ヘッドを支持する複数のピエゾアクチュエータを有し、前記複数のピエゾアクチュエータを個別に伸縮させることにより、前記実装面と前記部品との間の距離と前記部品の前記実装面に対する傾きとの少なくとも一方を調整する、
請求項16乃至18のいずれか1項に記載の部品実装システム。 - 前記ヘッドは、
前記部品の周部を保持する周部保持部と、
前記部品の中央部を鉛直上方へ向かって押圧する押圧部と、を有し、
前記ヘッド駆動部は、前記周部保持部が前記部品の周部を保持し且つ前記押圧部が前記部品の中央部を押圧することにより前記部品の中央部が前記部品の周部に比べて前記基板側へ突出するように撓んだ状態で、前記基板の前記実装面に前記部品の中央部から接触させる、
請求項1乃至19のいずれか1項に記載の部品実装システム。 - 前記部品は、前記基板に接合される接合面を有し、
前記ヘッドは、前記部品を保持し前記基板の前記実装面に対する前記部品の前記接合面の傾きが可変である傾き可変保持部を有し、
前記ヘッド駆動部は、前記傾き可変保持部が前記実装面に対して前記接合面を傾けて前記部品を保持した状態で、前記基板の前記実装面に前記部品の前記接合面の端縁から接触させる、
請求項1乃至19のいずれか1項に記載の部品実装システム。 - 前記ヘッドに設けられ、前記ヘッドが前記基板に予め設定された距離まで近づいた状態で、前記基板に当接して前記基板との間に気密な空間を形成するキャップと、
前記空間に存在する気体を排気することにより前記空間の真空度を高める真空源と、を更に備え、
前記ヘッド駆動部は、前記キャップを前記基板に当接させた状態で、前記キャップ内の真空度を高めた後、前記ヘッドを前記基板保持部に近づけて前記基板の前記実装面に前記部品を実装する、
請求項1乃至21のいずれか1項に記載の部品実装システム。 - 基板に対してモールドを押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂成形装置であって、
前記基板における樹脂部を形成する形成面が鉛直下方を向く姿勢で前記基板を保持する基板保持部と、
鉛直下方から前記モールドを保持するヘッドと、
前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の鉛直下方から前記モールドを押し付けるヘッド駆動部と、
前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂硬化部と、を備える、
樹脂成形装置。 - 前記ヘッド駆動部を制御して、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の鉛直下方から前記モールドを押し付けた後、前記樹脂硬化部を制御して、前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させることを繰り返すことにより、前記基板に複数の硬化した樹脂部を形成する制御部を更に備える、
請求項23に記載の樹脂成形装置。 - 前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させた状態で、前記モールドの鉛直下方または前記基板の鉛直上方から、前記モールドの第3アライメントマークおよび前記基板の第4アライメントマークを撮像する撮像部と、
前記モールドを前記基板に押し付けた状態で、前記第3アライメントマークと前記第4アライメントマークとを撮像することにより、前記基板と前記モールドとの相対位置誤差を算出し、前記相対位置誤差に応じて、前記ヘッド駆動部および/または前記基板保持部に、前記基板に対する前記モールドの位置および姿勢を補正させる制御部と、を更に備え、
前記制御部は、前記モールドを、前記モールドに載置された樹脂を介して前記基板に接触させた状態で、前記基板に対する前記モールドの位置および姿勢を補正させる、
請求項23または24に記載の樹脂成形装置。 - 前記樹脂部は、紫外線硬化樹脂からなり、
前記樹脂硬化部は、前記モールドに載置された樹脂に紫外線を照射することにより前記モールドに載置された樹脂を硬化させる紫外線照射部から構成され、
前記基板または前記モールドは、紫外線に対して透明であり、
前記樹脂硬化部は、前記基板の鉛直上方または前記モールドの鉛直下方から前記モールドに載置された樹脂に紫外線を照射する、
請求項23乃至25のいずれか1項に記載の樹脂成形装置。 - 前記形成面と前記モールドとの間の距離と前記モールドの前記形成面に対する傾きとの少なくとも一方を調整するモールド姿勢調整部を更に備える、
請求項23乃至26のいずれか1項に記載の樹脂成形装置。 - 前記基板の前記形成面と、平坦面を有する前記モールドの前記平坦面と、の間の距離を測定する距離測定部を更に備え、
前記ヘッド駆動部は、前記距離測定部により測定された距離に基づいて、前記モールドを保持する前記ヘッドを、前記基板を保持する前記基板保持部に近づける、
請求項27に記載の樹脂成形装置。 - 前記距離測定部は、前記平坦面における3つ以上の箇所において、前記形成面と前記平坦面との間の距離を測定し、
前記モールド姿勢調整部は、前記距離測定部により測定された前記形成面と前記平坦面との間の距離に基づいて、前記形成面と前記モールドとの間の距離と前記モールドの前記形成面に対する傾きとの少なくとも一方を調整する、
請求項28に記載の樹脂成形装置。 - 前記モールド姿勢調整部は、前記ヘッドを支持する複数のピエゾアクチュエータを有し、前記複数のピエゾアクチュエータを個別に伸縮させることにより、前記形成面と前記モールドとの間の距離と前記モールドの前記形成面に対する傾きとの少なくとも一方を調整する、
請求項27乃至29のいずれか1項に記載の樹脂成形装置。 - 前記モールド姿勢調整部は、前記基板の中央部に前記モールドを押し付ける場合と前記基板の周部に前記モールドを押し付ける場合とで、前記モールドの姿勢を異ならせる、
請求項27乃至30のいずれか1項に記載の樹脂成形装置。 - 前記ヘッドに保持された前記モールドに樹脂を吐出する樹脂吐出部を更に備え、
前記ヘッド駆動部は、前記樹脂吐出部により前記モールドに樹脂が載置された状態で、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記樹脂部の鉛直下方から前記モールドを押し付ける、
請求項23乃至31のいずれか1項に記載の樹脂成形装置。 - 前記樹脂は、紫外線硬化樹脂であり、
前記モールドを加熱するモールド加熱部を更に備える、
請求項23に記載の樹脂成形装置。 - 前記モールドを振動させる加振部を更に備える、
請求項32または33に記載の樹脂成形装置。 - 前記樹脂吐出部に設けられ、前記樹脂吐出部が前記モールドに予め設定された距離まで近づいた状態で、前記モールドの外周部に当接して前記モールドとの間に気密な空間を形成するキャップと、
前記樹脂吐出部から前記ヘッドに保持された前記モールドに樹脂を吐出させる際、前記空間に存在する気体を排気することにより前記空間の真空度を高める真空源と、を備える、
請求項32に記載の樹脂成形装置。 - 前記モールドに設けられ、前記モールドが前記基板に予め設定された距離まで近づいた状態で、前記基板に当接して前記基板との間に気密な空間を形成するキャップと、
前記空間に存在する気体を排気することにより前記空間の真空度を高める真空源と、を更に備え、
前記ヘッド駆動部は、前記キャップを前記基板に当接させた状態で、前記キャップ内の真空度を高めた後、前記モールドを前記基板に押し当てる、
請求項32に記載の樹脂成形装置。 - 前記真空源により前記空間の真空度が高められた状態で、前記モールドに樹脂を吐出させた後、前記モールドの周囲を大気圧環境下にする際、前記モールドを加熱することにより前記モールドに載置された前記樹脂の温度を上昇させるモールド加熱部を更に備える、
請求項35または36に記載の樹脂成形装置。 - 前記真空源により前記空間の真空度が高められた状態で、前記モールドに樹脂を吐出させる際、前記モールドを冷却するモールド冷却部を更に備える、
請求項37に記載の樹脂成形装置。 - 前記モールド加熱部は、ヒータを有し、
前記モールド冷却部は、ペルチェ素子を有する、
請求項38に記載の樹脂成形装置。 - 基板に対してモールドを押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂成形装置であって、
前記基板における樹脂部を形成する形成面が鉛直下方を向く姿勢で前記基板を保持する基板保持部と、
鉛直下方から前記モールドを保持するヘッドと、
前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記基板保持部を鉛直下方へ移動させることにより前記基板保持部を前記ヘッドに近づけて前記基板の鉛直下方から前記モールドを押し付ける基板保持部駆動部と、
前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂硬化部と、を備える、
樹脂成形装置。 - モールドに樹脂を載置する樹脂載置装置であって、
前記モールドが内側に配置されるチャンバと、
前記チャンバ内に存在する気体を排気することにより前記チャンバ内の真空度を高める真空源と、
前記モールドに樹脂を吐出する樹脂吐出部と、
前記真空源により前記チャンバ内の真空度が高められた状態で、前記樹脂吐出部により前記モールドに樹脂を吐出させた後、前記モールドの周囲を大気圧環境下にする際、前記モールドを加熱することにより前記モールドに載置された前記樹脂の温度を上昇させるモールド加熱部と、を備える、
樹脂載置装置。 - 前記真空源により前記チャンバ内の真空度が高められた状態で、前記樹脂吐出部により前記モールドに樹脂を吐出させる際、前記モールドを冷却するモールド冷却部を更に備える、
請求項41に記載の樹脂載置装置。 - 基板に部品を実装する部品実装方法であって、
部品供給部が、前記部品を供給する部品供給ステップと、
基板保持部が、前記基板における前記部品が実装される実装面が鉛直下方を向く姿勢で前記基板を保持する基板保持ステップと、
ヘッドが、鉛直下方から前記部品を保持する部品保持ステップと、
前記ヘッドと前記基板保持部とを近づけることにより前記基板の前記実装面に前記部品を実装する部品実装ステップと、を含む、
部品実装方法。 - 前記部品供給ステップにおいて、前記部品が前記部品供給部から供給された後、前記部品実装ステップにおいて、前記ヘッドに保持された前記部品が前記基板の前記実装面に接触するまでの間に、水供給部が、前記部品における前記基板に実装される側に水を供給する水供給ステップを更に含む、
請求項43に記載の部品実装方法。 - 前記部品供給ステップにおいて、前記部品が前記部品供給部から供給された後、前記部品実装ステップにおいて、前記ヘッドに保持された前記部品が前記基板の前記実装面に接触するまでの間に、クリーニング部が、前記部品における前記基板に実装される側を洗浄する部品洗浄ステップを更に含む、
請求項43または44に記載の部品実装方法。 - 基板に対してモールドを押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂成形方法であって、
基板保持部が、基板における樹脂部を形成する形成面が鉛直下方を向く姿勢で前記基板を保持する基板保持ステップと、
ヘッドが、鉛直下方から前記モールドを保持するモールド保持ステップと、
ヘッド駆動部が、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドと前記基板保持部とを近づけて前記基板の鉛直下方から前記モールドを押し付けるモールド押し付けステップと、
樹脂硬化部が、前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂硬化ステップと、を含む、
樹脂成形方法。 - 前記ヘッド駆動部が、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドを鉛直上方へ移動させることにより前記ヘッドを前記基板保持部に近づけて前記基板の鉛直下方から前記モールドを押し付けるモールド押し付けステップと、
前記樹脂硬化部が、前記モールドを前記基板に押し付けた状態で前記モールドに載置された樹脂を硬化させる樹脂硬化ステップと、を繰り返すことにより、前記基板に複数の硬化した樹脂部を形成する、
請求項46に記載の樹脂成形方法。 - 撮像部が、前記モールドを前記基板に押し付けて、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させた状態で、前記モールドの鉛直下方または前記基板の鉛直上方から、前記モールドの第3アライメントマークおよび前記基板の第4アライメントマークを撮像する撮像ステップと、
制御部が、前記第3アライメントマークと前記第4アライメントマークとに基づいて、前記基板と前記モールドとの相対位置誤差を算出し、前記相対位置誤差に応じて、前記ヘッド駆動部および/または基板保持部により、前記基板に対する前記モールドの位置および姿勢を補正する補正ステップと、を更に含み、
前記補正ステップにおいて、前記モールドを、前記樹脂を介して前記基板に押し付けた状態で、前記基板に対する前記モールドの位置および姿勢を補正する、
請求項46または47に記載の樹脂成形方法。 - 前記モールド押し付けステップにおいて、距離測定部が、前記基板の前記形成面と、外周部に平坦面を有する前記モールドの前記平坦面と、の間の距離を測定し、前記ヘッド駆動部が、前記距離測定部により測定された距離に基づいて、前記モールドを保持する前記ヘッドを、前記基板を保持する前記基板保持部に近づける、
請求項46乃至48のいずれか1項に記載の樹脂成形方法。 - 前記モールド押し付けステップにおいて、前記距離測定部が、前記平坦面における3つ以上の箇所において、前記形成面と前記平坦面との間の距離を測定し、モールド姿勢調整部が、前記形成面と前記平坦面との間の距離に基づいて、前記形成面と前記平坦面との間の距離と前記平坦面の前記形成面に対する傾きとの少なくとも一方を調整する、
請求項49に記載の樹脂成形方法。 - 樹脂吐出部が、前記ヘッドに保持された前記モールドに樹脂を吐出することにより前記モールドに前記樹脂を載置する樹脂載置ステップを更に含み、
前記モールド押し付けステップにおいて、前記樹脂吐出部により前記モールドに樹脂が注入された状態で、前記ヘッドを前記基板における前記樹脂部が形成される位置に対向させてから前記ヘッドと前記基板保持部とを近づけて前記樹脂部の鉛直下方から前記モールドを押し付ける、
請求項46乃至50のいずれか1項に記載の樹脂成形方法。 - 前記樹脂載置ステップにおいて、紫外線硬化樹脂を前記モールドに載置しているとき、または、紫外線硬化樹脂を前記モールドに載置した後において、前記モールドを加熱して昇温させ、および/または、
前記モールド押し付けステップにおいて、前記モールドの温度を下降させる、
請求項51に記載の樹脂成形方法。 - 前記樹脂載置ステップにおいて、樹脂を前記モールドに載置しているとき、または、樹脂を前記モールドに載置した後において、および/または樹脂を前記基板へ押し当てる際に、前記モールドを振動させる、
請求項51または52に記載の樹脂成形方法。 - 前記樹脂載置ステップにおいて、キャップを前記モールドの外周部または前記樹脂吐出部に当接させて前記モールドとの間に気密な空間を形成し、前記空間に存在する気体を排気することにより前記空間の真空度を高めた状態で、前記ヘッドに保持された前記モールドに樹脂を載置し、その後、前記キャップ内を大気圧に戻す、
請求項51乃至53のいずれか1項に記載の樹脂成形方法。 - 前記樹脂載置ステップにおいて、前記モールドを樹脂載置装置のチャンバの内側に配置し、前記チャンバに存在する気体を排気することにより前記チャンバ内の真空度を予め設定された真空度以上にした状態で、前記モールドに樹脂を載置し、その後、前記チャンバの内側を大気圧に戻し、
前記モールド保持ステップにおいて、樹脂成形装置のヘッドが、前記樹脂載置装置において樹脂が載置された前記モールドを鉛直下方から保持する、
請求項51乃至53のいずれか1項に記載の樹脂成形方法。 - 前記樹脂載置ステップにおいて、前記モールドを真空度の高い環境下に配置してから、前記モールドに前記樹脂を載置し、その後、前記樹脂が載置された前記モールドを大気圧環境下に配置するとともに、前記モールドに載置された前記樹脂の温度を上昇させる、
請求項51乃至55のいずれか1項に記載の樹脂成形方法。 - 前記樹脂載置ステップにおいて、真空度の高い環境下に配置された前記モールドに載置された前記樹脂を冷却する、
請求項56に記載の樹脂成形方法。 - 前記モールドに設けられ、前記モールドが前記基板に予め設定された距離まで近づいた状態で、前記基板に当接して前記基板との間に気密な空間を形成するキャップを、前記基板に当接させた状態で、前記空間に存在する気体を排気することにより前記空間の真空度を高めた後、前記モールドを前記基板に押し当てる、
請求項46乃至57のいずれか1項に記載の樹脂成形方法。 - 前記モールドに載置された樹脂は、熱硬化性樹脂または熱可塑性樹脂であり、
前記モールド押し付けステップにおいて、前記樹脂を加熱し軟化させた状態で、前記基板の鉛直下方から前記モールドを押し付ける、
請求項46乃至58のいずれか1項に記載の樹脂成形方法。
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PCT/JP2018/003308 WO2018147147A1 (ja) | 2017-02-09 | 2018-01-31 | 部品実装システム、樹脂成形装置、樹脂載置装置、部品実装方法および樹脂成形方法 |
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JP (4) | JP6703718B2 (ja) |
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JP7309231B2 (ja) | 2023-07-18 |
JP7146275B2 (ja) | 2022-10-04 |
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JP7106151B2 (ja) | 2022-07-26 |
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US11587804B2 (en) | 2023-02-21 |
TWI805571B (zh) | 2023-06-21 |
KR20230020557A (ko) | 2023-02-10 |
TW202331912A (zh) | 2023-08-01 |
KR102526457B1 (ko) | 2023-05-02 |
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TW202324587A (zh) | 2023-06-16 |
WO2018147037A1 (ja) | 2018-08-16 |
JP2022105514A (ja) | 2022-07-14 |
JPWO2018147147A1 (ja) | 2019-11-07 |
WO2018146880A1 (ja) | 2018-08-16 |
JP2020194956A (ja) | 2020-12-03 |
KR20230020558A (ko) | 2023-02-10 |
JP6703718B2 (ja) | 2020-06-03 |
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