WO2016208670A1 - マルチプレクサ、送信装置、受信装置、高周波フロントエンド回路、通信装置、およびマルチプレクサのインピーダンス整合方法 - Google Patents
マルチプレクサ、送信装置、受信装置、高周波フロントエンド回路、通信装置、およびマルチプレクサのインピーダンス整合方法 Download PDFInfo
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- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
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- H04B1/40—Circuits
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- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
Definitions
- the present invention relates to a multiplexer including an elastic wave filter, a transmission device, a reception device, a high-frequency front-end circuit, a communication device, and a multiplexer impedance matching method.
- Recent mobile phones are required to support a plurality of frequency bands and a plurality of wireless systems, so-called multiband and multimode, in one terminal.
- a multiplexer for demultiplexing a high-frequency signal having a plurality of radio carrier frequencies is arranged immediately below one antenna.
- the plurality of band pass filters constituting the multiplexer an elastic wave filter characterized by low loss in the pass band and steep pass characteristics around the pass band is used.
- Patent Document 1 discloses a surface acoustic wave device (SAW duplexer) having a configuration in which a plurality of surface acoustic wave filters are connected. Specifically, an inductance element is connected between the connection node between the reception surface acoustic wave filter and the transmission surface acoustic wave filter and the antenna terminal and the reference terminal to match the impedance between the antenna element and the antenna terminal. (Connected in parallel to the connection node). With this inductance element connected in parallel, the complex impedance of the surface acoustic wave filter viewed from the antenna terminal to which a plurality of capacitive surface acoustic wave filters are connected can be brought close to the characteristic impedance. Thereby, it is said that deterioration of insertion loss can be prevented.
- SAW duplexer surface acoustic wave device
- the number of elastic wave filters connected to the antenna terminal increases, such as a triplexer and a quadplexer.
- the capacitive impedance of the complex impedance viewed from the antenna terminal increases and the amount of deviation from the characteristic impedance increases.
- impedance matching is achieved in a region where the inductance value of the inductance element is smaller as the deviation is larger.
- the signal from the acoustic wave filter leaks to the reference terminal side via the inductance element.
- the greater the number of frequency bands to be demultiplexed in other words, the more elastic wave filters connected to the antenna terminal, the more the insertion loss of the elastic wave filter in the configuration in which the inductance element is connected in parallel to the antenna terminal. There is a problem of getting worse.
- the present invention has been made to solve the above-described problem, and includes a multiplexer, a transmission device, a reception device, a high-frequency front-end circuit, a communication device, in which insertion loss in the passband of each filter is reduced, and
- An object of the present invention is to provide an impedance matching method for a multiplexer.
- a multiplexer is a multiplexer that transmits and receives a plurality of high-frequency signals via an antenna element, and includes a plurality of elastic wave filters having mutually different passbands, and the antenna A common terminal to which a first inductance element is connected in series in a connection path with the element, and a second inductance element, and each of the plurality of acoustic wave filters is connected in series between an input terminal and an output terminal.
- At least one of a resonator and a parallel resonator connected between a connection path connecting the input terminal and the output terminal and a reference terminal, and one of the plurality of acoustic wave filters is elastic Of the input terminal and the output terminal of the wave filter, the terminal on the antenna element side is the second inductor connected to the terminal and the common terminal.
- a terminal on the antenna element side of the input terminal and the output terminal of the acoustic wave filter other than the one acoustic wave filter is connected to the common terminal via a sense element and connected to the parallel resonator. It is connected to a common terminal and is connected to the series resonator among the series resonator and the parallel resonator.
- first inductance element and the one of the input terminal and the output terminal of the one acoustic wave filter, which are closer to the antenna element, are connected in series, and the first inductance element is interposed through the second inductance element.
- the complex impedance in a predetermined pass band when viewing the acoustic wave filter alone, and the input terminal and the output terminal of the acoustic wave filter other than the one acoustic wave filter, the terminal closer to the antenna element is the common terminal
- the complex impedance in the predetermined pass band when the elastic wave filter other than the one elastic wave filter is viewed from the terminal side connected to the common terminal in a state of being connected to the common terminal is a complex conjugate relationship May be.
- the series resonator and the parallel resonator each have an IDT electrode, and the IDT electrode propagates more than a piezoelectric layer formed on one surface and an acoustic wave velocity that propagates through the piezoelectric layer.
- a high-sonic support substrate having a high bulk-wave sound velocity, and a bulk-wave sound velocity propagating through the piezoelectric layer disposed between the high-sonic support substrate and the piezoelectric layer is slower than the acoustic wave sound velocity propagating through the piezoelectric layer.
- a low sound velocity film is used to generate a low sound velocity film.
- a circuit element such as an inductance element or a capacitance element is added to achieve impedance matching between a plurality of acoustic wave filters, such as when the second inductance element is connected in series to the common terminal side of one acoustic wave filter.
- the Q value of each resonator becomes equivalently small.
- the Q value of each resonator can be maintained at a high value. Therefore, it is possible to form an elastic wave filter having low loss within the band.
- the multiplexer has a first passband as the plurality of elastic wave filters, and is adjacent to the first elastic wave filter that outputs a transmission signal to the antenna element, and the first passband.
- the second acoustic wave filter having a second pass band and receiving a reception signal from the antenna element, and a third pass located on a lower frequency side than the first pass band and the second pass band
- a third elastic wave filter that has a band and outputs a transmission signal to the antenna element; and a fourth pass band that is on a higher frequency side than the first pass band and the second pass band
- a fourth acoustic wave filter that inputs a reception signal from the antenna element, and the one acoustic wave filter to which the second inductance element is connected includes the second acoustic wave filter and the second acoustic wave filter. 4 may be at least one of the elastic wave filter.
- first inductance element may be further provided.
- a transmission device is a transmission device that inputs a plurality of high-frequency signals having different carrier frequency bands, filters the plurality of high-frequency signals, and wirelessly transmits the signals from a common antenna element.
- a plurality of transmission acoustic wave filters that input the plurality of high-frequency signals from the transmission circuit and pass only a predetermined frequency band; and a common terminal in which a first inductance element is connected in series on a connection path to the antenna element.
- Each of the plurality of acoustic wave filters for transmission includes a series resonator connected between an input terminal and an output terminal, and a connection path and a reference terminal for connecting the input terminal and the output terminal.
- At least one of the parallel resonators connected between the output acoustic wave filters of the plurality of transmission acoustic wave filters.
- a transmission acoustic wave filter other than the one transmission acoustic wave filter connected to the common terminal via a second inductance element connected to the output terminal and the common terminal, and connected to the parallel resonator.
- the output terminal is connected to the common terminal and is connected to the series resonator of the series resonator and the parallel resonator.
- the receiving device receives a plurality of high-frequency signals having different carrier frequency bands through an antenna element, demultiplexes the plurality of high-frequency signals, and outputs the demultiplexed signals to a receiving circuit.
- a first inductance element is connected in series to a connection path between a plurality of receiving acoustic wave filters that receive the plurality of high-frequency signals from the antenna element and pass only a predetermined frequency band, and the antenna element.
- Each of the plurality of acoustic wave filters for reception includes a series resonator connected between an input terminal and an output terminal, and an electric circuit for connecting the input terminal and the output terminal.
- An input terminal of one of the plurality of receiving elastic wave filters comprising at least one of parallel resonators connected between the path and the reference terminal A receiving elastic wave connected to the common terminal via the second inductance element connected to the input terminal and the common terminal, and connected to the parallel resonator, other than the one receiving elastic wave filter.
- An input terminal of the filter is connected to the common terminal, and is connected to the series resonator among the series resonator and the parallel resonator.
- the multiplexer impedance matching method is a multiplexer impedance matching method for transmitting and receiving a plurality of high-frequency signals via an antenna element, and includes a plurality of acoustic wave filters having different passbands.
- the complex impedance in the pass band of the other acoustic wave filter when the single acoustic wave filter is viewed from one of the input terminal and the output terminal of the one acoustic wave filter is short-circuited, and the one acoustic wave filter
- the plurality of elastic waves so that the complex impedance in the pass band of the other elastic wave filter is open when the elastic wave filter alone is viewed from one of the input terminal and the output terminal of the elastic wave filter other than the filter.
- Adjusting the filter, and adjusting the filter to the one acoustic wave filter When the first inductance element is connected in series, the complex impedance when the first acoustic wave filter is viewed from the filter matching inductance element side and the other acoustic wave filter other than the first acoustic wave filter are common terminals. And adjusting the inductance value of the filter matching inductance element so that the complex impedance when the other acoustic wave filter is viewed from the common terminal side is in a complex conjugate relationship. And from the common terminal of a composite circuit in which the one acoustic wave filter is connected to the common terminal via the filter matching inductance element, and the other acoustic wave filter is connected in parallel to the common terminal.
- the antenna element and the common terminal so that the seen complex impedance matches the characteristic impedance Adjusting the inductance value of the antenna matching inductance element connected in series between the plurality of acoustic wave filters, wherein the step of adjusting the plurality of acoustic wave filters includes a series resonator connected between the input terminal and the output terminal. And one of the plurality of elastic wave filters having at least one of parallel resonators connected between an electric path connecting the input terminal and the output terminal and a reference terminal.
- the parallel resonator and the series resonator are arranged so that the parallel resonator is connected to the filter matching inductance element, and the other acoustic wave filter includes the parallel resonator and the series resonator.
- the parallel resonator and the series resonator are arranged so that the series resonator is connected to the common terminal.
- a high-frequency front-end circuit includes an acoustic wave filter described above, a multiplexer described above, or a duplexer described above, and an amplifier circuit connected to the acoustic wave filter, the multiplexer, or the duplexer. And comprising.
- a communication device includes an RF signal processing circuit that processes a high-frequency signal transmitted and received by an antenna element, and the high-frequency signal that is transmitted between the antenna element and the RF signal processing circuit.
- a high-frequency front-end circuit as described.
- the transmission device, the reception device, the high-frequency front-end circuit, and the communication device according to the present invention even if the number of bands and the number of modes to be supported increase, insertion in the passband of each filter constituting them Loss can be reduced.
- FIG. 1 is a circuit configuration diagram of a multiplexer according to an embodiment.
- FIG. 2 is a plan view and a cross-sectional view schematically illustrating a resonator of the surface acoustic wave filter according to the embodiment.
- FIG. 3A is a circuit configuration diagram of a Band 25 transmission-side filter constituting the multiplexer according to the embodiment.
- FIG. 3B is a circuit configuration diagram of a Band 25 reception-side filter constituting the multiplexer according to the embodiment.
- FIG. 3C is a circuit configuration diagram of a Band 4 transmission-side filter constituting the multiplexer according to the embodiment.
- FIG. 3D is a circuit configuration diagram of a Band 4 reception-side filter constituting the multiplexer according to the embodiment.
- FIG. 1 is a circuit configuration diagram of a multiplexer according to an embodiment.
- FIG. 2 is a plan view and a cross-sectional view schematically illustrating a resonator of the surface acoustic wave filter according to the
- FIG. 4 is a schematic plan view illustrating an electrode configuration of a longitudinally coupled surface acoustic wave filter according to an embodiment.
- FIG. 5 is a circuit configuration diagram of a multiplexer according to a comparative example.
- FIG. 6A is a circuit configuration diagram of a transmission filter of Band 25 that constitutes a multiplexer according to a comparative example.
- FIG. 6B is a circuit configuration diagram of the reception filter of Band 25 that constitutes the multiplexer according to the comparative example.
- FIG. 6C is a circuit configuration diagram of a Band 4 transmission-side filter that configures the multiplexer according to the comparative example.
- FIG. 6D is a circuit configuration diagram of a reception filter of Band 4 that configures the multiplexer according to the comparative example.
- FIG. 6A is a circuit configuration diagram of a transmission filter of Band 25 that constitutes a multiplexer according to a comparative example.
- FIG. 6B is a circuit configuration diagram of the reception filter of Band 25 that constitutes
- FIG. 7A is a graph comparing the pass characteristics of Band 25 transmission-side filters according to the example and the comparative example.
- FIG. 7B is a graph comparing the pass characteristics of the Band 25 reception-side filters according to the example and the comparative example.
- FIG. 7C is a graph comparing the pass characteristics of Band4 transmission-side filters according to the example and the comparative example.
- FIG. 7D is a graph comparing the pass characteristics of Band4 reception-side filters according to the example and the comparative example.
- FIG. 8A is a Smith chart showing the complex impedance viewed from the transmission output terminal of the Band 25 transmission-side filter alone according to the comparative example.
- FIG. 8A is a Smith chart showing the complex impedance viewed from the transmission output terminal of the Band 25 transmission-side filter alone according to the comparative example.
- FIG. 8B is a Smith chart showing complex impedance viewed from the reception input terminal of the reception filter unit of Band 25 according to the comparative example.
- FIG. 8C is a Smith chart showing the complex impedance viewed from the transmission output terminal of the Band4 transmission-side filter alone according to the comparative example.
- FIG. 8D is a Smith chart showing a complex impedance viewed from a reception input terminal of a Band4 reception-side filter alone according to a comparative example.
- FIG. 9 is a Smith chart showing a complex impedance viewed from a common terminal of a circuit in which four filters according to a comparative example are connected in parallel at a common terminal, and the behavior of the complex impedance when an inductor element is connected in parallel to the common terminal.
- FIG. 10A is a Smith chart showing a complex impedance viewed from a transmission output terminal of a Band 25 transmission-side filter alone according to the embodiment.
- FIG. 10B is a Smith chart illustrating complex impedance viewed from the reception input terminal of the reception filter unit of Band 25 according to the embodiment.
- FIG. 10C is a Smith chart illustrating a complex impedance viewed from a transmission output terminal of a Band4 transmission-side filter alone according to the embodiment.
- FIG. 10D is a Smith chart illustrating a complex impedance viewed from a reception input terminal of a Band4 reception-side filter alone according to the embodiment.
- FIG. 10A is a Smith chart showing a complex impedance viewed from a transmission output terminal of a Band 25 transmission-side filter alone according to the embodiment.
- FIG. 10B is a Smith chart illustrating complex impedance viewed from the reception input terminal of the reception filter unit of Band 25 according to the embodiment.
- FIG. 10C is a Smith chart illustrating a complex
- FIG. 11 is a Smith chart showing a complex impedance viewed from the inductance element side of a single circuit in which the reception filter and the inductance element of Band 25 according to the embodiment are connected in series, and other than the reception filter of Band 25 according to the embodiment It is a Smith chart showing the complex impedance seen from the common terminal of the circuit single-piece
- FIG. 12A is a Smith chart showing a complex impedance when the multiplexer according to the embodiment is viewed from a common terminal.
- FIG. 12B is a Smith chart showing complex impedance viewed from the antenna element side when an inductance element is connected in series between the common terminal of the multiplexer according to the embodiment and the antenna element.
- FIG. 12A is a Smith chart showing a complex impedance when the multiplexer according to the embodiment is viewed from a common terminal.
- FIG. 12B is a Smith chart showing complex impedance viewed from the antenna element side when an induct
- FIG. 13 is a circuit configuration diagram of a high-frequency front-end circuit and a communication device including the multiplexer according to the embodiment.
- FIG. 14A is a diagram illustrating a configuration of the multiplexer according to the first modification of the embodiment.
- FIG. 14B is a diagram illustrating a configuration of a multiplexer according to the second modification of the embodiment.
- FIG. 15 is an operation flowchart for explaining the impedance matching method of the multiplexer according to the embodiment.
- the multiplexer 1 is a quadplexer in which a Band25 duplexer and a Band4 duplexer are connected by a common terminal 50.
- FIG. 1 is a circuit configuration diagram of a multiplexer 1 according to the embodiment.
- the multiplexer 1 includes transmission filters 11 and 13, reception filters 12 and 14, an inductance element 21 (second inductance element), a common terminal 50, and transmission input terminals 10 and 30. And reception output terminals 20 and 40.
- the multiplexer 1 is connected to the antenna element 2 via the common terminal 50 and an inductance element 31 (first inductance element) connected in series to the antenna element 2.
- the transmission-side filter 11 inputs a transmission wave generated by a transmission circuit (RFIC or the like) via the transmission input terminal 10, and transmits the transmission wave to the Band 25 transmission pass band (1850-1915 MHz: first pass band). ) And a non-balanced input-unbalanced output type band-pass filter (first elastic wave filter) that is filtered and output to the common terminal 50.
- a transmission circuit RFIC or the like
- first elastic wave filter a non-balanced input-unbalanced output type band-pass filter
- the reception-side filter 12 receives the reception wave input from the common terminal 50, filters the reception wave in the Band 25 reception passband (1930-1995 MHz: second passband), and outputs the filtered signal to the reception output terminal 20.
- This is a non-balanced input-unbalanced output type band-pass filter (second elastic wave filter).
- An inductance element 21 is connected in series between the reception filter 12 and the common terminal 50.
- the transmission-side filter 13 inputs a transmission wave generated by a transmission circuit (RFIC or the like) via the transmission input terminal 30 and inputs the transmission wave to a Band4 transmission passband (1710-1755 MHz: third passband). ) And a non-balanced input-unbalanced output type band-pass filter (third elastic wave filter) that is filtered and output to the common terminal 50.
- the reception-side filter 14 receives the reception wave input from the common terminal 50, filters the reception wave in the Band 4 reception pass band (2110-2155 MHz: the fourth pass band), and outputs the filtered signal to the reception output terminal 40.
- This is a non-balanced input-unbalanced output type bandpass filter (fourth elastic wave filter).
- the transmission side filters 11 and 13 and the reception side filter 14 are directly connected to the common terminal 50.
- FIG. 2 is a plan view and a cross-sectional view schematically showing a resonator of the surface acoustic wave filter according to the embodiment.
- a schematic plan view and a schematic sectional view showing the structure of the series resonator of the transmission side filter 11 among the plurality of resonators constituting the transmission side filters 11 and 13 and the reception side filters 12 and 14 are illustrated.
- the series resonator shown in FIG. 2 is for explaining a typical structure of the plurality of resonators, and the number and length of electrode fingers constituting the electrode are limited to this. Not.
- Each of the resonators of the transmission side filters 11 and 13 and the reception side filters 12 and 14 includes a substrate 5 having a piezoelectric layer 53 and IDT (InterDigital Transducer) electrodes 11a and 11b having a comb shape.
- IDT InterDigital Transducer
- the IDT electrode 11a includes a plurality of electrode fingers 110a that are parallel to each other and a bus bar electrode 111a that connects the plurality of electrode fingers 110a.
- the IDT electrode 11b includes a plurality of electrode fingers 110b that are parallel to each other and a bus bar electrode 111b that connects the plurality of electrode fingers 110b.
- the plurality of electrode fingers 110a and 110b are formed along a direction orthogonal to the X-axis direction.
- the IDT electrode 54 constituted by the plurality of electrode fingers 110a and 110b and the bus bar electrodes 111a and 111b has a laminated structure of the adhesion layer 541 and the main electrode layer 542 as shown in the sectional view of FIG. ing.
- the adhesion layer 541 is a layer for improving the adhesion between the substrate 5 and the main electrode layer 542, and for example, Ti is used as the material.
- the film thickness of the adhesion layer 541 is, for example, 12 nm.
- the main electrode layer 542 is made of, for example, Al containing 1% Cu.
- the film thickness of the main electrode layer 542 is, for example, 162 nm.
- the protective layer 55 is formed so as to cover the IDT electrodes 11a and 11b.
- the protective layer 55 is a layer for the purpose of protecting the main electrode layer 542 from the external environment, adjusting frequency temperature characteristics, and improving moisture resistance, for example, a film mainly composed of silicon dioxide. .
- adherence layer 541, the main electrode layer 542, and the protective layer 55 is not limited to the material mentioned above.
- the IDT electrode 54 does not have to have the above laminated structure.
- the IDT electrode 54 may be made of, for example, a metal or alloy such as Ti, Al, Cu, Pt, Au, Ag, or Pd, or may be made of a plurality of laminates made of the above metal or alloy. May be. Further, the protective layer 55 may not be formed.
- the substrate 5 includes a high sound speed support substrate 51, a low sound speed film 52, and a piezoelectric layer 53, and the high sound speed support substrate 51, the low sound speed film 52, and the piezoelectric layer 53 are provided. It has a laminated structure in this order.
- the piezoelectric layer 53 is a 50 ° Y-cut X-propagating LiTaO 3 piezoelectric single crystal or a piezoelectric ceramic (a lithium tantalate single crystal cut along a plane whose axis is rotated by 50 ° from the Y axis with the X axis as the central axis, Alternatively, it is made of ceramic and is made of a single crystal or ceramic in which surface acoustic waves propagate in the X-axis direction.
- the piezoelectric layer 53 has a thickness of 600 nm, for example.
- a piezoelectric layer 53 made of 42 to 45 ° Y-cut X-propagating LiTaO 3 piezoelectric single crystal or piezoelectric ceramic is used.
- the high sound velocity support substrate 51 is a substrate that supports the low sound velocity film 52, the piezoelectric layer 53, and the IDT electrode 54.
- the high acoustic velocity support substrate 51 is a substrate in which the acoustic velocity of the bulk wave in the high acoustic velocity support substrate 51 is higher than that of the surface wave or boundary wave propagating in the piezoelectric layer 53, and the surface acoustic wave is
- the piezoelectric layer 53 and the low sound velocity film 52 are confined in a portion where they are laminated, and function so as not to leak downward from the high sound velocity support substrate 51.
- the high sound speed support substrate 51 is, for example, a silicon substrate, and has a thickness of, for example, 200 ⁇ m.
- the low acoustic velocity film 52 is a membrane in which the acoustic velocity of the bulk wave in the low acoustic velocity film 52 is lower than the acoustic velocity of the elastic wave propagating through the piezoelectric layer 53. Arranged between. Due to this structure and the property that energy is concentrated in a medium where acoustic waves are essentially low in sound velocity, leakage of surface acoustic wave energy to the outside of the IDT electrode is suppressed.
- the low acoustic velocity film 52 is, for example, a film mainly composed of silicon dioxide and has a thickness of, for example, 670 nm.
- the Q value at the resonance frequency and the anti-resonance frequency can be significantly increased as compared with the conventional structure in which the piezoelectric substrate is used as a single layer. That is, since a surface acoustic wave resonator having a high Q value can be configured, a filter with a small insertion loss can be configured using the surface acoustic wave resonator.
- the high sound velocity support substrate 51 has a structure in which a support substrate and a high sound velocity film in which the sound velocity of the propagating bulk wave is higher than the acoustic wave of the surface wave and boundary wave propagating through the piezoelectric layer 53 are laminated.
- the support substrate is a piezoelectric material such as sapphire, lithium tantalate, lithium niobate, crystal, alumina, magnesia, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, steatite, forsterite, etc.
- the high sound velocity film includes various materials such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon oxynitride, DLC film or diamond, a medium mainly composed of the above materials, and a medium mainly composed of a mixture of the above materials. High sound velocity material can be used.
- the wavelength of the surface acoustic wave resonator is defined by the repetition pitch ⁇ of the plurality of electrode fingers 110a and 110b constituting the IDT electrodes 11a and 11b shown in the middle of FIG.
- the crossing width L of the IDT electrode is an overlapping electrode finger length when viewed from the X-axis direction of the electrode finger 110a of the IDT electrode 11a and the electrode finger 110b of the IDT electrode 11b.
- the duty ratio is the line width occupation ratio of the plurality of electrode fingers 110a and 110b, and is the ratio of the line width to the sum of the line width and the space width of the plurality of electrode fingers 110a and 110b. More specifically, the duty ratio is when the line width of the electrode fingers 110a and 110b constituting the IDT electrodes 11a and 11b is W and the space width between the adjacent electrode fingers 110a and 110b is S. , W / (W + S).
- FIG. 3A is a circuit configuration diagram of the transmission filter 11 of Band 25 that constitutes the multiplexer 1 according to the embodiment.
- the transmission-side filter 11 includes series resonators 101 to 105, parallel resonators 151 to 154, and matching inductance elements 141 and 161.
- the series resonators 101 to 105 are connected in series between the transmission input terminal 10 and the transmission output terminal 61.
- the parallel resonators 151 to 154 are connected in parallel to each other between the connection points of the transmission input terminal 10, the transmission output terminal 61, and the series resonators 101 to 105 and the reference terminal (ground).
- the transmission side filter 11 constitutes a ladder type band pass filter.
- the inductance element 141 is connected between the transmission input terminal 10 and the series resonator 101, and the inductance element 161 is connected between the connection point of the parallel resonators 152, 153, and 154 and the reference terminal. .
- the transmission output terminal 61 is connected to the common terminal 50.
- the transmission output terminal 61 is connected to the series resonator 105 and is not directly connected to any of the parallel resonators 151 to 154.
- FIG. 3C is a circuit configuration diagram of a transmission filter 13 of Band 4 that constitutes the multiplexer 1 according to the embodiment.
- the transmission-side filter 13 includes series resonators 301 to 304, parallel resonators 351 to 354, and matching inductance elements 361 to 363.
- the series resonators 301 to 304 are connected in series with each other between the transmission input terminal 30 and the transmission output terminal 63.
- the parallel resonators 351 to 354 are connected in parallel to each other between the connection points of the transmission input terminal 30, the transmission output terminal 63, and the series resonators 301 to 304 and the reference terminal (ground).
- the transmission side filter 13 constitutes a ladder type band pass filter.
- the transmission output terminal 63 is connected to the common terminal 50.
- the transmission output terminal 63 is connected to the series resonator 304 and is not directly connected to any of the parallel resonators 351 to 354.
- FIG. 3B is a circuit configuration diagram of the reception filter 12 of the Band 25 configuring the multiplexer 1 according to the embodiment.
- the reception-side filter 12 includes, for example, a longitudinally coupled surface acoustic wave filter unit. More specifically, the reception-side filter 12 includes a longitudinally coupled filter unit 203, series resonators 201 and 202, and parallel resonators 251 to 253.
- FIG. 4 is a schematic plan view showing an electrode configuration of the longitudinally coupled filter unit 203 according to the embodiment.
- the longitudinally coupled filter unit 203 includes IDTs 211 to 219, reflectors 220 and 221, an input port 230 and an output port 240.
- the IDTs 211 to 219 are each composed of a pair of IDT electrodes facing each other.
- IDTs 214 and 216 are arranged to sandwich IDT 215 in the X-axis direction
- IDTs 213 and 217 are arranged to sandwich IDTs 214 to 216 in the X-axis direction.
- the IDTs 212 and 218 are arranged so as to sandwich the IDTs 213 to 217 in the X-axis direction
- the IDTs 211 and 219 are arranged so as to sandwich the IDTs 212 to 218 in the X-axis direction.
- Reflectors 220 and 221 are arranged so as to sandwich IDTs 211 to 219 in the X-axis direction.
- the IDTs 211, 213, 215, 217, and 219 are connected in parallel between the input port 230 and the reference terminal (ground), and the IDTs 212, 214, 216, and 218 are connected in parallel between the output port 240 and the reference terminal. It is connected.
- the series resonators 201 and 202 and the parallel resonators 251 and 252 constitute a ladder type filter unit.
- the reception input terminal 62 is connected to the common terminal 50 via the inductance element 21. In addition, as shown in FIG. 3B, the reception input terminal 62 is connected to the parallel resonator 251.
- FIG. 3D is a circuit configuration diagram of a reception filter 14 of Band 4 that constitutes the multiplexer 1 according to the embodiment.
- the reception-side filter 14 includes, for example, a longitudinally coupled surface acoustic wave filter unit. More specifically, the reception-side filter 14 includes a longitudinally coupled filter unit 402, a series resonator 401, and a parallel resonator 451.
- the electrode configuration of the longitudinally coupled filter unit 402 is the same as that of the longitudinally coupled filter unit 203 that configures the reception-side filter 12, and the electrode configuration other than the number of IDTs is the same.
- the reception input terminal 64 is connected to the common terminal 50. As shown in FIG. 3D, the reception input terminal 64 is connected to the series resonator 401 and is not directly connected to the parallel resonator 451.
- the arrangement of the resonators and circuit elements in the surface acoustic wave filter included in the multiplexer 1 according to the present embodiment is the arrangement exemplified in the transmission side filters 11 and 13 and the reception side filters 12 and 14 according to the above example. It is not limited to.
- the arrangement of the resonators and circuit elements in the surface acoustic wave filter differs depending on the required specification of the pass characteristics in each frequency band (Band).
- the arrangement configuration is, for example, the number of arrangements of series resonators and parallel resonators, and selection of a filter configuration such as a ladder type or a vertical coupling type.
- the main features of the present invention are (1) the transmission side filters 11 and 13 and the reception side filters 12 and 14. Each includes at least one of a series resonator and a parallel resonator.
- the reception input terminal 62 of the reception-side filter 12 that is one elastic wave filter is connected to the common terminal 50 via the inductance element 21.
- the transmission output terminals 61 and 63 of the transmission filters 11 and 13 that are elastic wave filters other than the reception filter 12, and the reception input terminal 64 of the reception filter 14 are connected to the parallel resonator 251.
- Each of the series resonators 105, 304 and the serial resonator and the parallel resonator is connected to the common terminal 50. 401 that it is connected, is that.
- the multiplexer 1 includes a plurality of surface acoustic wave filters having different pass bands, a common terminal 50 in which the inductance element 31 is connected in series on the connection path of the antenna element 2, and the inductance element 21.
- each of the plurality of surface acoustic wave filters has an IDT electrode formed on the substrate 5 and is connected to the series resonator connected between the input terminal and the output terminal, and formed on the substrate 5. It has at least one of parallel resonators connected between an electric path having an IDT electrode and connecting an input terminal and an output terminal and a reference terminal.
- the reception input terminal 62 of the reception-side filter 12 is connected to the common terminal 50 via the inductance element 21 and is connected to the parallel resonator 251.
- transmission output terminals 61 and 63 and reception input terminal 64 of transmission side filters 11 and 13 and reception side filter 14 are connected to common terminal 50 and connected to series resonators 105, 304 and 401, respectively. Not connected to the parallel resonator.
- the multiplexer 1 having the above main feature, even if the number of bands and modes to be handled increase, it is possible to reduce the insertion loss in the passband of each filter constituting them.
- the parallel resonators 151 to 154 shown in FIG. 3A each have a resonance frequency frp and an anti-resonance frequency fap (> frp) in the resonance characteristics.
- Each of the series resonators 101 to 105 has a resonance frequency frs and an anti-resonance frequency fas (> frs> frp) in resonance characteristics. Note that the resonance frequencies frs of the series resonators 101 to 105 are designed to substantially match, but do not necessarily match.
- the antiresonance frequency fas of the series resonators 101 to 105 the resonance frequency frp of the parallel resonators 151 to 154, and the antiresonance frequency fap of the parallel resonators 151 to 154, which do not necessarily match.
- the anti-resonance frequency fap of the parallel resonators 151 to 154 and the resonance frequency frs of the series resonators 101 to 105 are brought close to each other.
- the vicinity of the resonance frequency frp in which the impedances of the parallel resonators 151 to 154 approach zero becomes a low-frequency side stop band.
- the impedance of the parallel resonators 151 to 154 increases near the antiresonance frequency fap, and the impedance of the series resonators 101 to 105 approaches 0 near the resonance frequency frs.
- the signal path from the transmission input terminal 10 to the transmission output terminal 61 becomes a signal pass band.
- the impedances of the series resonators 101 to 105 become higher and become a high-frequency side blocking region. That is, the steepness of the attenuation characteristic in the high-frequency-side blocking region is greatly affected by where the anti-resonance frequency fas of the series resonators 101 to 105 is set outside the signal passing region.
- frequency characteristics and impedance characteristics of the multiplexer 1 according to the present embodiment will be described in comparison with the multiplexer according to the comparative example.
- FIG. 5 is a circuit configuration diagram of the multiplexer 600 according to the comparative example.
- FIG. 6A is a circuit configuration diagram of a transmission filter 66 of Band 25 that configures the multiplexer 600 according to the comparative example.
- FIG. 6B is a circuit configuration diagram of the reception filter 67 of Band 25 configuring the multiplexer 600 according to the comparative example.
- FIG. 6C is a circuit configuration diagram of a Band4 transmission-side filter 68 constituting the multiplexer 600 according to the comparative example.
- FIG. 6D is a circuit configuration diagram of a Band 4 reception-side filter 69 constituting the multiplexer 600 according to the comparative example.
- the multiplexer 600 includes transmission side filters 66 and 68, reception side filters 67 and 69, a common terminal 650, transmission input terminals 660 and 680, and reception output terminals 670 and 690.
- An inductance element 71 is connected in parallel to a connection node between the common terminal 650 and the antenna element 2.
- the transmission filter 66 has the same circuit configuration as the transmission filter 11 as shown in FIG. 6A.
- the transmission filter 68 has the same circuit configuration as the transmission filter 13 as shown in FIG. 6C.
- the reception filter 69 has the same circuit configuration as the reception filter 14 as shown in FIG. 6D.
- the reception-side filter 67 is configured only in that a series resonator 701 is connected to the reception input terminal 675 and no parallel resonator is connected, as compared with the reception-side filter 12. As different.
- the multiplexer 600 compared to the multiplexer 1 according to the embodiment, (1) the point that the inductance element is not connected in series between the reception-side filter 67 and the common terminal 650 ( 2)
- the inductance element 71 disposed between the common terminal 650 and the antenna element 2 is not connected in series but in parallel connection, and (3) a series resonator 701 is provided at the reception input terminal 675 of the reception-side filter 67.
- the configuration is different in that it is connected and the parallel resonator is not connected.
- FIG. 7A is a graph comparing the pass characteristics of the transmission filters 11 and 66 of Band 25 according to the example and the comparative example.
- FIG. 7B is a graph comparing the pass characteristics of the receiving filters 12 and 67 of the Band 25 according to the example and the comparative example.
- FIG. 7C is a graph comparing the pass characteristics of Band 4 transmission-side filters 13 and 68 according to the example and the comparative example.
- FIG. 7D is a graph comparing the pass characteristics of the reception filters 14 and 69 of Band 4 according to the example and the comparative example.
- the insertion loss in the passband of the embodiment is superior to the insertion loss in the passband of the comparative example on the transmission side and reception side of Band25 and the transmission side of Band4. .
- the required specifications transmission side insertion loss 2.0 dB or less, It can also be seen that the receiving side insertion loss of 3.0 dB or less is satisfied.
- the multiplexer 600 according to the comparative example does not satisfy the required specifications in the pass band on the transmitting side and the receiving side of the Band 25.
- the multiplexer 1 As described above, according to the multiplexer 1 according to the present embodiment, even when the number of bands and the number of modes to be handled increase, it is possible to reduce the insertion loss in the passband of each filter constituting them. Become.
- FIGS. 8A and 8B respectively show the complex impedance viewed from the transmission output terminal 665 of the transmission filter 66 alone of Band 25 according to the comparative example, and the complex impedance viewed from the reception input terminal 675 of the reception filter 67 alone. It is a Smith chart. 8C and 8D respectively show the complex impedance viewed from the transmission output terminal 685 of the Band 4 transmission side filter 68 according to the comparative example and the complex impedance viewed from the reception input terminal 695 of the reception side filter 69 alone. It is a Smith chart to represent.
- each filter is connected to the common terminal 650, final impedance matching is obtained by the inductance element 71 connected in parallel.
- the impedance characteristics of each filter alone are designed so that the complex impedance in the frequency region outside the passband is on the open side.
- the complex impedances of the band outside the passband B OUT69 of the reception side filter 69 in FIG. 8D are all arranged on the substantially open side.
- the resonators connected to the common terminal 650 of all the filters are not parallel resonators but series resonators.
- FIG. 9 is a Smith chart (left side) showing a complex impedance viewed from the common terminal 650 of a circuit in which four filters according to the comparative example are connected in parallel at the common terminal 650.
- the inductance element 71 is connected in parallel to the common terminal 650. It is a Smith chart (right side) explaining the movement of the complex impedance at the time of doing.
- the complex impedance in the pass band of the circuit in which the four filters are connected in parallel through the common terminal 650 shows high capacitance (the outer peripheral area of the lower half circle of the Smith chart).
- the capacity of the complex impedance of the circuit increases as the number of filters to be dealt with increases due to the acceleration of multimode and multiband.
- the inductance value of the inductance element 71 is 1.5 nH, for example.
- the inductance elements 71 having such a small inductance value are connected in parallel, the impedance of the inductance element 71 becomes small, and the current easily flows toward the reference (ground) terminal. As a result, a high-frequency signal to be passed leaks to the reference (ground) terminal, and insertion loss in the passband of each filter increases.
- FIGS. 10A and 10B respectively show the complex impedance viewed from the transmission output terminal 61 of the transmission filter 11 alone of Band 25 according to the embodiment and the complex impedance viewed from the reception input terminal 62 of the reception filter 12 alone. It is a Smith chart.
- 10C and 10D respectively show the complex impedance viewed from the transmission output terminal 63 of the Band 4 transmission-side filter 13 according to the embodiment and the complex impedance viewed from the reception input terminal 64 of the reception-side filter 14 alone. It is a Smith chart showing.
- the impedance characteristics of the transmission side filters 11 and 13 and the reception side filter 14 alone are designed so that the complex impedance in the frequency region outside the pass band is on the open side as in the comparative example. Is done. Specifically, in FIG. 10A, the passband outside region B OUT11 of the transmission filter 11 to which the second inductor 21 is not connected, and the passband of the transmission filter 13 to which the second inductor 21 is not connected in FIG. 10C. outer region B OUT13 and, in FIG. 10D, the complex impedance of the pass band region B OUT14 of the second inductor 21 is the reception filter 14 are not connected, are arranged in a substantially open side. In order to realize these complex impedance arrangements, the resonators connected to the common terminal 50 of the three filters are not series resonators but series resonators.
- the resonator connected to the common terminal 50 is a parallel resonator.
- the complex impedance of the out-band region B OUT12 of the reception-side filter 14 is arranged on the substantially short side. The purpose of arranging the out-of-passband region B OUT12 on the short side will be described later.
- FIG. 11 is a Smith chart (left side) showing a complex impedance viewed from a common terminal 50 of a single circuit in which the reception-side filter 12 and the inductance element 21 of the Band 25 according to the embodiment are connected in series, and the Band 25 according to the embodiment. 6 is a Smith chart showing complex impedance viewed from the common terminal 50 of a single circuit in which all the filters other than the reception side filter 12 are connected in parallel by the common terminal 50.
- the complex in a predetermined pass band when the reception filter 12 alone is viewed through the inductance element 21 in a state where the inductance element 21 and the input terminal of the reception filter 12 are connected in series.
- the terminal connected to the common terminal 50 in a state where the impedance and the terminal closer to the antenna element 2 among the input terminals and output terminals of the transmission side filters 11 and 13 and the reception side filter 14 are connected to the common terminal 50 It can be seen that the complex impedance in the predetermined pass band when the transmission filters 11 and 13 and the reception filter 14 are viewed from the side is generally close to a complex conjugate.
- the complex impedance of the two circuits being in the complex conjugate relationship includes a relationship in which the positive and negative of the complex components of the complex impedances are inverted, and is not limited to the case where the absolute values of the complex components are equal.
- the complex conjugate relationship in the present embodiment is that the complex impedance of one circuit is located capacitive (lower half circle of Smith chart) and the complex impedance of the other circuit is inductive (upper half of Smith chart). A relationship that is located in a circle) is also included.
- the out-of-band region B OUT12 of the reception-side filter 12 is positioned on the open side as in the comparative example, the out-of-band region B OUT12 is converted to the complex conjugate by the inductance element 21 having a larger inductance value.
- the inductance value of the inductance element 21 can be reduced by arranging the complex impedance of the out-of-passband region BOUT12 on the short side using the parallel resonator 251 as in the reception-side filter 12 according to the embodiment. It becomes possible to reduce the insertion loss in the pass band.
- FIG. 12A is a Smith chart showing the complex impedance when the multiplexer 1 according to the embodiment is viewed from the common terminal 50. That is, the complex impedance shown in FIG. 12A represents the complex impedance seen from the common terminal 50 of the multiplexer that combines the two circuits shown in FIG. By arranging the complex impedances of the two circuits shown in FIG. 11 in a complex conjugate relationship, the synthesized impedance of the synthesized circuit is close to the characteristic impedance in the four pass bands. Impedance matching is realized.
- FIG. 12B is a Smith chart showing the complex impedance viewed from the antenna element 2 side when the inductance element 31 is connected in series between the common terminal 50 of the multiplexer 1 according to the embodiment and the antenna element 2.
- the complex impedance slightly deviates from the characteristic impedance (slightly deviates toward the capacitive side).
- the complex impedance of the multiplexer 1 viewed from the common terminal 50 is finely adjusted in the induction side direction.
- the inductance value of the inductance element 31 at this time is, for example, 2.3 nH.
- the inductance element 21 is connected in series between the reception-side filter 12 and the common terminal 50, and (2) common.
- the inductance element 31 arranged between the terminal 50 and the antenna element 2 is connected in series, not in parallel.
- a parallel resonator 251 is connected to the reception input terminal 62 of the reception-side filter 12. The point is different as a configuration.
- the complex impedance viewed from the common terminal 50 of the single circuit connected in parallel can be in a complex conjugate relationship. This makes it possible to match the complex impedance viewed from the common terminal 50 of the multiplexer 1 having a circuit in which the above two circuits are combined with the characteristic impedance while ensuring low loss in the passband. Further, by connecting in series an inductance element 31 having a small inductance value between the common terminal 50 and the antenna element 2, the complex impedance of the multiplexer 1 viewed from the common terminal 50 is finely adjusted in the induction side direction. It becomes possible.
- FIG. 13 is a circuit configuration diagram of the high-frequency front-end circuit 70 and the communication device 80 including the multiplexer 1 according to the embodiment.
- a high frequency front end circuit 70, an antenna element 2, an RF signal processing circuit (RFIC) 3, a baseband signal processing circuit (BBIC) 4, and an inductance element 31 are shown.
- the high frequency front end circuit 70, the RF signal processing circuit 3, and the baseband signal processing circuit 4 constitute a communication device 80.
- the high-frequency front end circuit 70 includes the multiplexer 1 according to the embodiment, a transmission side switch 26 and a reception side switch 27, a power amplifier circuit 28, and a low noise amplifier circuit 29.
- the transmission-side switch 26 is a switch circuit having two selection terminals individually connected to the transmission input terminals 10 and 30 of the multiplexer 1 and a common terminal connected to the power amplifier circuit 28.
- the reception-side switch 27 is a switch circuit having two selection terminals individually connected to the reception output terminals 20 and 40 of the multiplexer 1 and a common terminal connected to the low noise amplifier circuit 29.
- Each of the transmission side switch 26 and the reception side switch 27 connects a common terminal and a signal path corresponding to a predetermined band in accordance with a control signal from a control unit (not shown), for example, SPDT (Single Pole). It is composed of a Double Throw type switch. Note that the number of selection terminals connected to the common terminal is not limited to one and may be plural. That is, the high frequency front end circuit 70 may support carrier aggregation.
- the power amplifier circuit 28 is a transmission amplifier circuit that amplifies the high-frequency signal (here, the high-frequency transmission signal) output from the RF signal processing circuit 3 and outputs it to the antenna element 2 via the transmission-side switch 26 and the multiplexer 1. .
- the low noise amplifier circuit 29 is a reception amplification circuit that amplifies a high-frequency signal (here, a high-frequency reception signal) that has passed through the antenna element 2, the multiplexer 1, and the reception-side switch 27 and outputs the amplified signal to the RF signal processing circuit 3.
- a high-frequency signal here, a high-frequency reception signal
- the RF signal processing circuit 3 performs signal processing on the high-frequency reception signal input from the antenna element 2 via the reception signal path by down-conversion or the like, and the received signal generated by the signal processing is a baseband signal processing circuit 4. Output to. Further, the RF signal processing circuit 3 performs signal processing on the transmission signal input from the baseband signal processing circuit 4 by up-conversion or the like, and outputs a high-frequency transmission signal generated by the signal processing to the power amplifier circuit 24.
- the RF signal processing circuit 3 is, for example, an RFIC.
- the signal processed by the baseband signal processing circuit 4 is used, for example, for displaying an image as an image signal or for a call as an audio signal.
- the high-frequency front-end circuit 70 may include other circuit elements between the above-described components.
- the signal of each band It becomes possible to reduce the insertion loss in the passband of each filter constituting the path.
- the communication device 80 may not include the baseband signal processing circuit 4 in accordance with the high-frequency signal processing method.
- the piezoelectric layer 53 of the substrate 5 according to the embodiment uses a 50 ° Y-cut X-propagating LiTaO 3 single crystal, but the cut angle of the single crystal material is not limited to this. That is, the cut angle of the piezoelectric layer of the surface acoustic wave filter constituting the multiplexer according to the embodiment using LiTaO 3 single crystal as the piezoelectric layer is not limited to 50 ° Y. Even a surface acoustic wave filter using a LiTaO 3 piezoelectric layer having a cut angle other than the above can achieve the same effect.
- the piezoelectric layer may be made of another piezoelectric single crystal such as LiNbO 3 .
- a structure in which the piezoelectric layer is laminated on the support substrate may be used in addition to the piezoelectric layer as a whole.
- the multiplexer 1 according to the present invention may further include an inductance element 31 connected in series between the antenna element 2 and the common terminal 50.
- the multiplexer 1 according to the present invention may have a configuration in which a plurality of acoustic wave filters having the above-described features and inductance elements 21 and 31 on a chip are mounted on a high-frequency substrate.
- the inductance elements 21 and 31 may be, for example, chip inductors or may be formed by a conductor pattern on a high frequency substrate.
- the multiplexer according to the present invention is not limited to the Band 25 + Band 4 quadplexer as in the embodiment.
- FIG. 14A is a diagram illustrating a configuration of the multiplexer according to the first modification of the embodiment.
- the multiplexer according to the present invention may be a hexaplexer having six frequency bands, which is applied to a system configuration in which Band25, Band4, and Band30 having a transmission band and a reception band are combined.
- the inductance element 21 is connected in series to the reception filter of the Band 25, and a parallel resonator is connected to the reception input terminal of the reception filter of the Band 25.
- a series resonator is connected to a terminal connected to a common terminal of five filters other than the reception filter of Band 25, and a parallel resonator is not connected.
- FIG. 14B is a diagram illustrating a configuration of a multiplexer according to the second modification of the embodiment.
- the multiplexer according to the present invention may be a hexaplexer having six frequency bands, which is applied to a system configuration in which Band1, Band3, and Band7 having a transmission band and a reception band are combined.
- the inductance element 21 is connected in series to the reception filter of Band 1 and a parallel resonator is connected to the reception input terminal of the reception filter of Band 1.
- a series resonator is connected to a terminal connected to a common terminal of five filters other than the reception filter of Band1, and a parallel resonator is not connected.
- the insertion loss in the passband can be reduced as the number of elastic wave filters as the constituent elements increases, as compared with the multiplexer configured by the conventional matching technique.
- the multiplexer according to the present invention may not have a configuration including a plurality of duplexers that perform transmission and reception.
- it can be applied as a transmission apparatus having a plurality of transmission frequency bands. That is, a transmission apparatus that inputs a plurality of high-frequency signals having different carrier frequency bands, filters the plurality of high-frequency signals, and wirelessly transmits them from a common antenna element, and inputs a plurality of high-frequency signals from a transmission circuit.
- a plurality of transmitting elastic wave filters that allow only a predetermined frequency band to pass therethrough, and a common terminal to which the first inductance element is connected in series in the connection path to the antenna element may be provided.
- each of the plurality of acoustic wave filters for transmission includes an IDT electrode formed on the piezoelectric layer, a series resonator connected between the input terminal and the output terminal, and a piezoelectric layer. It has at least one of parallel resonators connected between a reference terminal and an electrical path having a formed IDT electrode and connecting an input terminal and an output terminal.
- the output terminal of one transmission acoustic wave filter is connected to the common terminal through the second inductance element connected to the output terminal and the common terminal, and in parallel. Connected to the resonator.
- the output terminal of the transmitting acoustic wave filter other than the one transmitting acoustic wave filter is connected to the common terminal, and is connected to the series resonator of the series resonator and the parallel resonator.
- the multiplexer according to the present invention can be applied as a receiving apparatus having a plurality of reception frequency bands, for example. That is, a receiving device that inputs a plurality of high-frequency signals having different carrier frequency bands via an antenna element, demultiplexes the plurality of high-frequency signals, and outputs the demultiplexed signals to a receiving circuit.
- a plurality of receiving acoustic wave filters that input signals and pass only a predetermined frequency band may be provided, and a common terminal in which a first inductance element is connected in series on a connection path to the antenna element.
- each of the plurality of receiving acoustic wave filters has an IDT electrode formed on the piezoelectric layer and is connected between the input terminal and the output terminal, and on the piezoelectric layer. It has at least one of parallel resonators connected between a reference terminal and an electrical path having a formed IDT electrode and connecting an input terminal and an output terminal.
- the input terminal of one receiving acoustic wave filter is connected to the common terminal via the second inductance element connected to the input terminal and the common terminal, and in parallel. Connected to the resonator.
- the input terminal of the receiving acoustic wave filter other than the one receiving acoustic wave filter is connected to the common terminal and is connected to the series resonator of the series resonator and the parallel resonator.
- the present invention is not only a multiplexer, a transmitting apparatus and a receiving apparatus having the characteristic acoustic wave filter and the inductance element as described above, but also as an impedance matching method for a multiplexer using such characteristic components as steps. Also holds.
- FIG. 15 is an operation flowchart for explaining the impedance matching method of the multiplexer according to the embodiment.
- the impedance matching method for a multiplexer includes (1) one of an input terminal and an output terminal of one elastic wave filter (elastic wave filter A) among a plurality of elastic wave filters having different pass bands.
- the complex impedance in the pass band of the other elastic wave filter when the single elastic wave filter is viewed is short-circuited, and the input terminal and output of the elastic wave filter (elastic wave filter B) other than the one elastic wave filter
- a filter matching inductance element is connected in series to the one acoustic wave filter (elastic wave filter A).
- the complex impedance when the one acoustic wave filter is viewed from the filter matching inductance element side and the other acoustic wave filters (the plurality of acoustic wave filters B) other than the one acoustic wave filter are common.
- a step of adjusting the inductance value of the filter matching inductance element so that the complex impedance when the other acoustic wave filter is viewed from the common terminal side when connected in parallel to the terminal has a complex conjugate relationship ( S20) and (3) the one acoustic wave filter (elastic wave filter A) is connected to the common terminal via the filter matching inductance element, and the other elastic wave filter (a plurality of elastic waves) is connected to the common terminal.
- the complex impedance seen from the common terminal of the composite circuit connected in parallel with the filter B) is matched with the characteristic impedance. Adjusting the inductance value of the antenna matching inductance element connected in series between the tenor element and the common terminal (S30), and (4) adjusting the plurality of acoustic wave filters on the piezoelectric layer.
- the parallel resonator is connected to the filter matching inductance element in the one elastic wave filter.
- the series resonator of the parallel resonator and the series resonator is connected to a common terminal.
- a parallel resonator and a series resonator are arranged as described above.
- the surface acoustic wave filter which has an IDT electrode is illustrated as a transmission side filter and reception side filter which comprise a multiplexer, a quadplexer, a transmitter, a receiver, a high frequency front end circuit, and a communication apparatus.
- each filter constituting the multiplexer, the quadplexer, the transmission device, the reception device, the high-frequency front-end circuit, and the communication device according to the present invention has an elastic boundary wave or a BAW (BAW (comprising a series resonator and a parallel resonator).
- An elastic wave filter using Bulk Acoustic Wave may be used. This also produces the same effects as those provided by the multiplexer, quadplexer, transmission apparatus, reception apparatus, high-frequency front-end circuit, and communication apparatus according to the above-described embodiment.
- the multiplexer 1 includes a plurality of acoustic wave filters having different passbands, a common terminal in which the first inductance element is connected in series on the connection path to the antenna element 2, and the second inductance element.
- the output terminal of the transmission-side filter is connected to the common terminal via the second inductance element connected to the output terminal and the common terminal, and is connected to the parallel resonator
- the antenna element side terminal is connected to the common terminal, and is connected to the series resonator of the series resonator and the parallel resonator. You may have. This also makes it possible to provide a low-loss multiplexer even when the number of bands and modes to be handled increases.
- the present invention can be widely used in communication devices such as mobile phones as low-loss multiplexers, transmitters, and receivers applicable to multiband and multimode frequency standards.
- RFIC RF signal processing circuit
- BBIC Baseband signal processing circuit
- Substrate 10 30, 660, 680 Transmission input terminal 11, 13, 66, 68 Transmission side filter 11a, 11b, 54 IDT electrode 12, 14, 67, 69 Reception side filter 20, 40, 670, 680 Reception output terminal 21 , 31, 71, 141, 161, 361, 362, 363, 641, 661, 861, 862, 863 Inductance element 26 Transmission side switch 27 Reception side switch 28 Power amplifier circuit 29 Low noise amplifier circuit 50, 650 Common terminal 51 High sound speed Support substrate 52 Low sound velocity film 53 Piezoelectric layer 55 Protective layer 61, 63, 665, 685 Transmission output terminal 62, 64, 675, 695 Reception input terminal 70 High-frequency front end circuit 80 Communication device 101, 102, 103, 104, 105 , 201, 202, 30 , 302, 303, 304, 401, 601, 602, 603, 604, 605, 701, 70
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Abstract
Description
[1.マルチプレクサの基本構成]
本実施例では、LTE(Long Term Evolution)規格のBand25(送信通過帯域:1850-1915MHz、受信通過帯域:1930-1995MHz)およびBand4(送信通過帯域:1710-1755MHz、受信通過帯域:2110-2155MHz)に適用されるクワッドプレクサについて例示する。
ここで、送信側フィルタ11および13ならびに受信側フィルタ12および14を構成する弾性表面波共振子の構造について説明する。
図3Aは、実施例に係るマルチプレクサ1を構成するBand25の送信側フィルタ11の回路構成図である。図3Aに示すように、送信側フィルタ11は、直列共振子101~105と、並列共振子151~154と、整合用のインダクタンス素子141および161とを備える。
図3Bは、実施例に係るマルチプレクサ1を構成するBand25の受信側フィルタ12の回路構成図である。図3Bに示すように、受信側フィルタ12は、例えば、縦結合型の弾性表面波フィルタ部を含む。より具体的には、受信側フィルタ12は、縦結合型フィルタ部203と、直列共振子201および202と、並列共振子251~253とを備える。
ここで、本実施例に係るラダー型の弾性表面波フィルタの動作原理について説明しておく。
図5は、比較例に係るマルチプレクサ600の回路構成図である。また、図6Aは、比較例に係るマルチプレクサ600を構成するBand25の送信側フィルタ66の回路構成図である。図6Bは、比較例に係るマルチプレクサ600を構成するBand25の受信側フィルタ67の回路構成図である。図6Cは、比較例に係るマルチプレクサ600を構成するBand4の送信側フィルタ68の回路構成図である。図6Dは、比較例に係るマルチプレクサ600を構成するBand4の受信側フィルタ69の回路構成図である。
図7Aは、実施例および比較例に係るBand25の送信側フィルタ11および66の通過特性を比較したグラフである。図7Bは、実施例および比較例に係るBand25の受信側フィルタ12および67の通過特性を比較したグラフである。図7Cは、実施例および比較例に係るBand4の送信側フィルタ13および68の通過特性を比較したグラフである。図7Dは、実施例および比較例に係るBand4の受信側フィルタ14および69の通過特性を比較したグラフである。
図8Aおよび図8Bは、それぞれ、比較例に係るBand25の送信側フィルタ66単体の送信出力端子665から見た複素インピーダンス、および、受信側フィルタ67単体の受信入力端子675から見た複素インピーダンスを表すスミスチャートである。また、図8Cおよび図8Dは、それぞれ、比較例に係るBand4の送信側フィルタ68単体の送信出力端子685から見た複素インピーダンス、および受信側フィルタ69単体の受信入力端子695から見た複素インピーダンスを表すスミスチャートである。
図10Aおよび図10Bは、それぞれ、実施例に係るBand25の送信側フィルタ11単体の送信出力端子61から見た複素インピーダンス、および、受信側フィルタ12単体の受信入力端子62から見た複素インピーダンスを表すスミスチャートである。また、図10Cおよび図10Dは、それぞれ、実施例に係るBand4の送信側フィルタ13単体の送信出力端子63から見た複素インピーダンス、および、受信側フィルタ14単体の受信入力端子64から見た複素インピーダンスを表すスミスチャートである。
以上、実施例に係るマルチプレクサ1は、比較例に係るマルチプレクサ600と比較して、(1)受信側フィルタ12と共通端子50との間にインダクタンス素子21が直列接続されており、(2)共通端子50とアンテナ素子2との間に配置されたインダクタンス素子31は並列接続ではなく直列接続されており、(3)受信側フィルタ12の受信入力端子62には並列共振子251が接続されている点が構成として異なる。
ここで、上記実施例に係るマルチプレクサ1を備える高周波フロントエンド回路70および通信装置80について説明する。
以上、本発明の実施の形態に係るマルチプレクサついて、クワッドプレクサの実施例を挙げて説明したが、本発明は、上記実施例には限定されない。例えば、上記実施例に次のような変形を施した態様も、本発明に含まれ得る。
2 アンテナ素子
3 RF信号処理回路(RFIC)
4 ベースバンド信号処理回路(BBIC)
5 基板
10、30、660、680 送信入力端子
11、13、66、68 送信側フィルタ
11a、11b、54 IDT電極
12、14、67、69 受信側フィルタ
20、40、670、680 受信出力端子
21、31、71、141、161、361、362、363、641、661、861、862、863 インダクタンス素子
26 送信側スイッチ
27 受信側スイッチ
28 パワーアンプ回路
29 ローノイズアンプ回路
50、650 共通端子
51 高音速支持基板
52 低音速膜
53 圧電体層
55 保護層
61、63、665、685 送信出力端子
62、64、675、695 受信入力端子
70 高周波フロントエンド回路
80 通信装置
101、102、103、104、105、201、202、301、302、303、304、401、601、602、603、604、605、701、702、801、802、803、804、901 直列共振子
110a、110b 電極指
111a、111b バスバー電極
151、152、153、154、251、252、253、351、352、353、354、451、651、652、653、654、751、752、851、852、853、854、951 並列共振子
203、402 縦結合型フィルタ部
211、212、213、214、215、216、217、218、219 IDT
220、221 反射器
230 入力ポート
240 出力ポート
541 密着層
542 主電極層
Claims (10)
- アンテナ素子を介して複数の高周波信号を送受信するマルチプレクサであって、
互いに異なる通過帯域を有する複数の弾性波フィルタと、
前記アンテナ素子との接続経路に第1インダクタンス素子が直列接続される共通端子と、
第2インダクタンス素子とを備え、
前記複数の弾性波フィルタのそれぞれは、入力端子と出力端子との間に接続された直列共振子、および、前記入力端子と前記出力端子とを接続する接続経路と基準端子との間に接続された並列共振子の少なくとも1つを備え、
前記複数の弾性波フィルタのうち、一の弾性波フィルタの入力端子および出力端子のうち前記アンテナ素子側の端子は、当該端子および前記共通端子に接続された前記第2インダクタンス素子を介して前記共通端子に接続され、かつ、前記並列共振子と接続され、
前記一の弾性波フィルタ以外の弾性波フィルタの入力端子および出力端子のうち前記アンテナ素子側の端子は、前記共通端子に接続され、かつ、前記直列共振子および前記並列共振子のうち前記直列共振子と接続されている
マルチプレクサ。 - 前記第2インダクタンス素子と前記一の弾性波フィルタの入力端子および出力端子のうち前記アンテナ素子に近い方の端子とが直列接続された状態で、前記第2インダクタンス素子を介して前記一の弾性波フィルタ単体を見た場合の、所定の通過帯域における複素インピーダンスと、前記一の弾性波フィルタ以外の弾性波フィルタの入力端子および出力端子のうち前記アンテナ素子に近い方の端子が前記共通端子と接続された状態で、前記共通端子と接続された前記端子側から前記一の弾性波フィルタ以外の弾性波フィルタを見た場合の、前記所定の通過帯域における複素インピーダンスとは、複素共役の関係にある
請求項1に記載のマルチプレクサ。 - 前記直列共振子および前記並列共振子は、IDT電極を有し、
前記IDT電極が一方面上に形成された圧電体層と、
前記圧電体層を伝搬する弾性波音速よりも、伝搬するバルク波音速が高速である高音速支持基板と、
前記高音速支持基板と前記圧電体層との間に配置され、前記圧電体層を伝搬する弾性波音速よりも、伝搬するバルク波音速が低速である低音速膜とを備える
請求項1または2に記載のマルチプレクサ。 - 前記マルチプレクサは、前記複数の弾性波フィルタとして、
第1の通過帯域を有し、前記アンテナ素子へ送信信号を出力する第1の前記弾性波フィルタと、
前記第1の通過帯域に隣接する第2の通過帯域を有し、前記アンテナ素子から受信信号を入力する第2の前記弾性波フィルタと、
前記第1の通過帯域および前記第2の通過帯域より低周波側にある第3の通過帯域を有し、前記アンテナ素子へ送信信号を出力する第3の前記弾性波フィルタと、
前記第1の通過帯域および前記第2の通過帯域より高周波側にある第4の通過帯域を有し、前記アンテナ素子から受信信号を入力する第4の前記弾性波フィルタとを備え、
前記第2インダクタンス素子が接続された前記一の弾性波フィルタは、前記第2の前記弾性波フィルタおよび前記第4の前記弾性波フィルタの少なくとも一方である
請求項1~3のいずれか1項に記載のマルチプレクサ。 - さらに、
前記第1インダクタンス素子を備える
請求項1~4のいずれか1項に記載のマルチプレクサ。 - 互いに異なる搬送周波数帯域を有する複数の高周波信号を入力し、当該複数の高周波信号をフィルタリングして共通のアンテナ素子から無線送信させる送信装置であって、
送信回路から前記複数の高周波信号を入力し、所定の周波数帯域のみを通過させる複数の送信用弾性波フィルタと、
前記アンテナ素子との接続経路に第1インダクタンス素子が直列接続される共通端子とを備え、
前記複数の送信用弾性波フィルタのそれぞれは、入力端子と出力端子との間に接続された直列共振子、および、前記入力端子と前記出力端子とを接続する接続経路と基準端子との間に接続された並列共振子の少なくとも1つを備え、
前記複数の送信用弾性波フィルタのうち、一の送信用弾性波フィルタの出力端子は、当該出力端子および前記共通端子に接続された第2インダクタンス素子を介して前記共通端子に接続され、かつ、前記並列共振子と接続され、
前記一の送信用弾性波フィルタ以外の送信用弾性波フィルタの出力端子は、前記共通端子に接続され、かつ、前記直列共振子および前記並列共振子のうち前記直列共振子と接続されている
送信装置。 - 互いに異なる搬送周波数帯域を有する複数の高周波信号を、アンテナ素子を介して入力し、当該複数の高周波信号を分波して受信回路へ出力する受信装置であって、
前記アンテナ素子から前記複数の高周波信号を入力し、所定の周波数帯域のみを通過させる複数の受信用弾性波フィルタと、
前記アンテナ素子との接続経路に第1インダクタンス素子が直列接続される共通端子とを備え、
前記複数の受信用弾性波フィルタのそれぞれは、入力端子と出力端子との間に接続された直列共振子、および、前記入力端子と前記出力端子とを接続する電気経路と基準端子との間に接続された並列共振子の少なくとも1つを備え、
前記複数の受信用弾性波フィルタのうち、一の受信用弾性波フィルタの入力端子は、当該入力端子および前記共通端子に接続された第2インダクタンス素子を介して前記共通端子に接続され、かつ、前記並列共振子と接続され、
前記一の受信用弾性波フィルタ以外の受信用弾性波フィルタの入力端子は、前記共通端子に接続され、かつ、前記直列共振子および前記並列共振子のうち前記直列共振子と接続されている
受信装置。 - アンテナ素子を介して複数の高周波信号を送受信するマルチプレクサのインピーダンス整合方法であって、
互いに異なる通過帯域を有する複数の弾性波フィルタのうち、一の弾性波フィルタの入力端子および出力端子の一方から、当該一の弾性波フィルタ単体を見た場合の、他の弾性波フィルタの通過帯域における複素インピーダンスがショート状態となり、前記一の弾性波フィルタ以外の弾性波フィルタの入力端子および出力端子の一方から、当該弾性波フィルタ単体を見た場合の、他の弾性波フィルタの通過帯域における複素インピーダンスがオープン状態となるよう、前記複数の弾性波フィルタを調整するステップと、
前記一の弾性波フィルタにフィルタ整合用インダクタンス素子が直列接続された場合の、前記フィルタ整合用インダクタンス素子側から前記一の弾性波フィルタを見た場合の複素インピーダンスと、前記一の弾性波フィルタ以外の他の弾性波フィルタが共通端子に並列接続された場合の、前記共通端子側から前記他の弾性波フィルタを見た場合の複素インピーダンスとが、複素共役の関係となるように、フィルタ整合用インダクタンス素子のインダクタンス値を調整するステップと、
前記フィルタ整合用インダクタンス素子を介して前記一の弾性波フィルタが前記共通端子と接続され、かつ、前記共通端子に前記他の弾性波フィルタが並列接続された合成回路の、前記共通端子から見た複素インピーダンスが特性インピーダンスと一致するよう、前記アンテナ素子と前記共通端子との間に直列接続されるアンテナ整合用インダクタンス素子のインダクタンス値を調整するステップとを含み、
前記複数の弾性波フィルタを調整するステップでは、
入力端子と出力端子との間に接続された直列共振子、および、前記入力端子と前記出力端子とを接続する電気経路と基準端子との間に接続された並列共振子の少なくとも1つを有する前記複数の弾性波フィルタのうち、前記一の弾性波フィルタにおいて、前記並列共振子が前記フィルタ整合用インダクタンス素子と接続されるよう前記並列共振子および前記直列共振子を配置し、前記他の弾性波フィルタにおいて、前記並列共振子および前記直列共振子のうち前記直列共振子が前記共通端子と接続されるよう、前記並列共振子および前記直列共振子を配置する
マルチプレクサのインピーダンス整合方法。 - 請求項1~5のいずれか1項に記載のマルチプレクサと、
前記マルチプレクサに接続された増幅回路と、を備える
高周波フロントエンド回路。 - アンテナ素子で送受信される高周波信号を処理するRF信号処理回路と、
前記アンテナ素子と前記RF信号処理回路との間で前記高周波信号を伝達する請求項9に記載の高周波フロントエンド回路と、を備える
通信装置。
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DE112016002335B4 (de) | 2021-07-01 |
DE112016002335T8 (de) | 2018-03-29 |
KR101867792B1 (ko) | 2018-06-15 |
DE112016002335T5 (de) | 2018-02-15 |
JPWO2016208670A1 (ja) | 2017-09-14 |
US20200127643A1 (en) | 2020-04-23 |
US10193530B2 (en) | 2019-01-29 |
CN107735948B (zh) | 2019-01-04 |
US10541674B2 (en) | 2020-01-21 |
US20180109243A1 (en) | 2018-04-19 |
CN107735948A (zh) | 2018-02-23 |
KR20180003626A (ko) | 2018-01-09 |
US11394369B2 (en) | 2022-07-19 |
US20190140619A1 (en) | 2019-05-09 |
JP6222406B2 (ja) | 2017-11-01 |
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