WO2016174697A1 - Module semi-conducteur et son procédé de production - Google Patents

Module semi-conducteur et son procédé de production Download PDF

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Publication number
WO2016174697A1
WO2016174697A1 PCT/JP2015/002284 JP2015002284W WO2016174697A1 WO 2016174697 A1 WO2016174697 A1 WO 2016174697A1 JP 2015002284 W JP2015002284 W JP 2015002284W WO 2016174697 A1 WO2016174697 A1 WO 2016174697A1
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WO
WIPO (PCT)
Prior art keywords
electronic element
conductor layer
semiconductor module
insulating substrate
sealing resin
Prior art date
Application number
PCT/JP2015/002284
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English (en)
Japanese (ja)
Inventor
康亮 池田
Original Assignee
新電元工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to EP15860021.3A priority Critical patent/EP3163608A4/fr
Priority to JP2016513152A priority patent/JP6166460B2/ja
Priority to US15/106,804 priority patent/US9892993B2/en
Priority to CN201580003247.1A priority patent/CN106463481B/zh
Priority to PCT/JP2015/002284 priority patent/WO2016174697A1/fr
Publication of WO2016174697A1 publication Critical patent/WO2016174697A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • the present invention relates to a semiconductor module and a method for manufacturing the semiconductor module.
  • JP 2011-114176 A As an example of such a conventional semiconductor module, JP 2011-114176 A can be cited.
  • JP 2011-114176 A a power semiconductor element, a pair of first metal members arranged with the power semiconductor element sandwiched therebetween, and a pair of heat sinks sandwiched between the pair of first metal members are stacked.
  • a power semiconductor device is disclosed that includes a pair of insulating layers, a first power semiconductor element, a pair of first metal members, and a filled resin filled to cover the pair of insulating layers.
  • the semiconductor module according to the present invention comprises: A second insulating substrate; A second conductor layer provided on the mounting surface of the second insulating substrate; A second electronic element provided on the second conductor layer, and The first conductor layer, the first electronic element, the second electronic element, and the second conductor layer may be sequentially arranged between the first insulating substrate and the second insulating substrate.
  • the semiconductor module according to the present invention comprises: You may further provide the conductor pillar which connects said 1st electronic element and said 2nd electronic element.
  • the semiconductor module according to the present invention comprises: You may further provide external resin which is provided in the outer side of the said frame and consists of a flame-retardant material compared with the said sealing resin.
  • the electronic device is Any of the semiconductor modules described above; A heat sink provided with a recess for inserting the semiconductor module; Is provided.
  • a lubricant may be applied between the recess of the heat sink and the semiconductor module.
  • a method for manufacturing a semiconductor module according to the present invention includes: Of the first insulating substrate, the first conductor layer provided on the mounting surface of the first insulating substrate, and the first electronic element provided on the first conductor layer, the entire mounting region, the first conductor Covering the layer and the first electronic element with a metal frame; Covering the entire mounting region, the first conductor layer and the first electronic element with a sealing resin by injecting a sealing resin material into the frame body; Is provided.
  • a method for manufacturing a semiconductor module according to the present invention includes: Before injecting the sealing resin material into the frame, installing the frame in a mold; Removing a part of the mold after injecting the sealing resin material into the frame; After removing a part of the mold, an external resin made of a flame-retardant material compared to the sealing resin is formed outside the frame by injecting an external resin material into the mold. Providing May be further provided.
  • the carbonized sealing resin since the entire sealing resin is covered with a metal frame, even if the sealing resin is carbonized due to an overcurrent flowing through the first electronic element, the carbonized sealing resin It is possible to prevent the occurrence of defects caused by the heat of In addition, by adopting such a metal frame, it is possible to achieve high heat dissipation and suppress the influence of high-frequency noise from the outside or the influence of high-frequency noise generated from the inside.
  • FIG. 1 is a front cross-sectional view of a semiconductor module according to a first embodiment of the present invention.
  • FIG. 2 is a plan view of a first member and conductor columns used in the first embodiment of the present invention.
  • FIG. 3 is a plan view of a second member and conductor columns used in the first embodiment of the present invention.
  • FIG. 4 is a front sectional view showing a sealing resin, a frame body and an external resin in the semiconductor module according to the first embodiment of the present invention.
  • FIG. 5 is a circuit diagram of the semiconductor module according to the first embodiment of the present invention.
  • FIG. 6 is an upper plan view for explaining the size and positional relationship of the first insulating substrate, the second insulating substrate, and the frame used in the first embodiment of the present invention.
  • FIG. 1 is a front cross-sectional view of a semiconductor module according to a first embodiment of the present invention.
  • FIG. 2 is a plan view of a first member and conductor columns used in the first embodiment of the present invention
  • FIG. 7A is a plan sectional view for illustrating the method for manufacturing the semiconductor module in the first embodiment of the present invention.
  • FIG. 7B is a diagram for explaining the method for manufacturing the semiconductor module according to the first embodiment of the present invention, and is a cross-sectional plan view for explaining the process proceeding from FIG. 7A.
  • FIG. 8 is a side sectional view of an electronic apparatus according to the second embodiment of the present invention.
  • FIG. 9 is a rear sectional view of a semiconductor module according to a modification of the present invention.
  • FIG. 10 is a rear sectional view of a semiconductor module according to another modification of the present invention.
  • FIG. 11 is a circuit diagram when four devices are used in the modification of the present invention.
  • FIG. 12 is a front sectional view of a semiconductor module according to still another modification of the present invention.
  • FIG. 13 is a circuit diagram when six devices are used in the modification of the present invention.
  • the semiconductor module 100 includes a first member 10, a second member 20, and a conductor pillar extending in the vertical direction between the first member 10 and the second member 20. 31.
  • the first member 10 includes a first insulating substrate 11, a first conductor layer 12 (12a-12d) provided on the mounting surface of the first insulating substrate 11, and a first conductor layer. 12 first conductor layer portions 12b (which will be described later).
  • the semiconductor module 100 of the present embodiment includes a sealing resin that covers the entire mounting area in the mounting surface of the first insulating substrate 11, the first conductor layer 12, and the first electronic element 13. 80 and a metal frame 70 that covers the entire sealing resin 80.
  • the mounting surface means a surface on which an electronic element is placed.
  • the upper surface of the first insulating substrate 11 is the mounting surface.
  • the bottom surface of the conductive substrate 21 is a mounting surface.
  • the mounting area means an area where an electronic element is mounted, and the mounting area of the first insulating substrate 11 means an area where the first electronic element 13 is placed, which will be described later.
  • the mounting area of the second insulating substrate 21 means an area where a second electronic element 23 to be described later is mounted.
  • first electronic element 13 and one second electronic element 23 are provided.
  • the area where the electronic element 13 is provided becomes the mounting area, and covering the entire mounting area means covering the entire area where the first electronic elements 13 are provided.
  • the area where each second electronic element 23 is provided becomes a mounting area, and the entire mounting area is covered by each second electronic element 23 being provided. Means covering all of the area.
  • the material of the metal frame 70 is not particularly limited, but examples include aluminum, iron, stainless steel, copper, and the like. In view of lightness, workability, price, etc., it is preferable to use aluminum as the material. Note that the metal frame 70 need not be composed of only a metal element, and may be a metal oxide or the like.
  • an attachment conductor layer 12 d for attaching the frame body 70 is provided on the first insulating substrate 11.
  • the attachment conductor layer 12d is disposed along the periphery of the first insulating substrate 11, and has a substantially “U” shape when viewed from above.
  • the frame body 70 is placed on the mounting conductor layer 12d (see FIG. 4), and the mounting conductor layer 12d and the frame body 70 are joined by, for example, solder.
  • the region on the inner side of the attachment conductor layer 12d is the mounting region described above, and a plurality of first conductor layer portions 12a-12c are provided in the mounting region.
  • the second member 20 includes a second insulating substrate 21, a second conductor layer 22 (22b, 22c) provided on the mounting surface of the second insulating substrate 21, and a second conductor layer. 22 and a second electronic element 23 provided in a second conductor layer portion 22b (described later).
  • the first insulating substrate 11, the first conductor layer 12, the first electronic element 13, the second electronic element 23, the second conductor layer 22, and the second insulating substrate 21 are sequentially provided from the bottom. Has been placed.
  • the first conductor layer 12 has a plurality of first conductor layer portions 12a-12d provided on the mounting surface of the first insulating substrate 11.
  • the second conductor layer 22 has a plurality of second conductor layer portions 22 b and 22 c provided on the mounting surface of the second insulating substrate 21.
  • the semiconductor module 100 of the present embodiment has a conductor column 31 that connects the first electronic element 13 and the second electronic element 23.
  • the conductor pillar 31 has a substantially rectangular cross section (see FIGS. 2 and 3), and extends in the vertical direction as shown in FIG. As shown in FIG. 1, the lower surface of the conductor column 31 is connected to the upper surface of the first electronic element 13, and the lower surface of the second electronic element 23 is connected to the upper surface of the conductor column 31.
  • the second member 20 is inverted and stacked on the first member 10. For this reason, in the embodiment shown in FIG. 1, the first connection portion 46 is connected to the upper left side of the first electronic element 13, but the second connection portion 56 is connected to the lower right side of the second electronic element 23. .
  • the first electronic element 13 and the second electronic element 23 of the present embodiment are, for example, switching devices.
  • a column connecting portion 47 connected to the first conductor layer portion 12 a is provided on the side surface of the conductor column 31.
  • the first conductor layer portion 12a is provided with a lead frame 41 connected to the source electrode.
  • the electric power supplied from the source electrode is supplied to the first electronic element 13 and the second electronic element 23 through the first conductor layer portion 12a, the column connection portion 47, and the conductor column 31 (see also FIG. 5). ).
  • it becomes one of the reasons for supplying electric power in this way and the upper surface in FIG. 1 of the 1st electronic element 13 connected to the conductor pillar 31 becomes high temperature compared with a lower surface, and a 2nd electron
  • the lower surface of the element 23 in FIG. 1 has a higher temperature than the upper surface.
  • the first connecting portion 46 has a substantially “U” shape as shown in FIG. 1 when viewed from the front.
  • the second connection portion 56 also has a substantially “U” shape as shown in FIG. 1 when viewed from the front.
  • the first connection portion 46 is connected to the first conductor layer portion 12c.
  • the first conductor layer portion 12c is provided with a lead frame 42 connected to a control electrode such as a gate electrode.
  • the second connection portion 56 is connected to the second conductor layer portion 22c.
  • the second conductor layer portion 22c is provided with a lead frame 52 connected to a control electrode such as a gate electrode.
  • the first conductor layer portion 12b provided on the lower surface of the first electronic element 13 is connected to a lead frame 43 connected to the drain electrode.
  • the second conductor layer portion 22b provided on the lower surface of the second electronic element 23 is connected to a lead frame 53 connected to the drain electrode.
  • a first heat radiating plate 14 made of copper or the like is provided on the side opposite to the mounting surface of the first insulating substrate 11 (the lower surface side in FIG. 1).
  • a second heat radiating plate 24 made of copper or the like is provided on the side opposite to the mounting surface of the second insulating substrate 21 (upper surface side in FIG. 1).
  • Each of the first electronic element 13 and the second electronic element 23 of the present embodiment may be a power device.
  • a power device the switching device mentioned above can be mentioned. More specifically, as an example of an electronic element, an FET such as a MOSFET, a bipolar transistor, an IGBT, or the like can be given. A typical example is a MOSFET.
  • an external resin 90 is provided outside the frame body 70. More specifically, the external resin 90 is provided so as to cover the entire side surface of the frame body 70 (see FIG. 7B).
  • the external resin 90 may be provided so as to cover the upper and lower surfaces of the frame body 70, but from the viewpoint of heat dissipation, the external resin 90 is provided on the upper and lower surfaces of the frame body 70 in the present embodiment. Absent.
  • the sealing resin 80 is not particularly limited as long as it is an insulating resin (insulating resin).
  • an epoxy resin composition having a curing agent, a curing accelerator, an inorganic filler, and the like in addition to the epoxy resin can be used as the sealing resin 80.
  • the epoxy resin composition is not particularly limited as long as it has two or more epoxy groups in one molecule.
  • the entire second member 20 is covered with the frame body 70, the entire mounting area of the second insulating substrate 21 is necessarily covered with the frame body 70.
  • the semiconductor module 100 includes the lead frames 42 and 52 connected to the two gate electrodes, the lead frame 41 connected to the one source electrode, and the lead frame 43 connected to the two drain electrodes. 53, and lead frames 44, 49a, 49b, 54, 59a, 59b described later.
  • Each lead frame protrudes from one side of the sealing resin 80 to the outside. 2 and 3, each lead frame protrudes downward from a side extending in the left-right direction on the lower side of FIGS. 2 and 3.
  • the semiconductor module 100 has a first heat detection resistor 71 on the first insulating substrate 11 side. Two lead frames 49 a and 49 b are connected to the first heat detection resistor 71. The first heat detection resistor 71 is disposed in the vicinity of the first conductor layer portion 12b connected to the drain electrode, and is used to measure the temperature of the first conductor layer portion 12b. As shown in FIG. 3, the semiconductor module 100 includes a second heat detection resistor 72 on the second insulating substrate 21 side. Two lead frames 59 a and 59 b are connected to the second heat detection resistor 72. The second heat detection resistor 72 is disposed in the vicinity of the second conductor layer portion 22b connected to the drain electrode, and is used to measure the temperature of the second conductor layer portion 22b.
  • a lead frame 44 for sensing is provided on the first conductor layer portion 12b connected to the drain electrode.
  • a lead frame 54 for sensing is provided on the second conductor layer portion 22b connected to the drain electrode.
  • the semiconductor module 100 of the present embodiment is manufactured, for example, as follows.
  • the first conductor layer 12 is provided on the mounting surface of the first insulating substrate 11, the first electronic element 13 is provided on the first conductor layer portion 12 b of the first conductor layer 12, and the mounting surface of the first insulating substrate 11 is provided.
  • the first member 10 provided with the first heat radiating plate 14 on the opposite surface is prepared (see FIG. 1).
  • the second conductor layer 22 is provided on the mounting surface of the second insulating substrate 21, the second electronic element 23 is provided on the second conductor layer portion 22 b of the second conductor layer 22, and the mounting surface of the second insulating substrate 21.
  • the 2nd member 20 with which the 2nd heat sink 24 was provided in the surface on the opposite side is prepared.
  • the second member 20 is inverted 180 degrees, and the second electronic element 23 is positioned so as to face downward.
  • the conductor column 31 is positioned between the first electronic element 13 of the first member 10 and the second electronic element 23 of the second member 20, and the first electronic element 13 and the second electronic element 23 are connected to the conductor column 31. Connecte
  • the sealing resin material 81 (the material of the sealing resin 80) is injected into the frame body 70 from the upper side in FIG. 7A, for example.
  • the inside of the frame body 70 is filled with the sealing resin material 81 as shown in FIG. 7A.
  • the entire mounting area of the first insulating substrate 11, the first conductor layer 12 other than the attachment conductor layer 12d, the first electronic element 13, the conductor pillar 31, the second electronic element 23, the second conductor layer 22, the first The two-insulating substrate 21 and the second heat radiating plate 24 are covered with the sealing resin material 81. Since the upper surface of the second heat radiating plate 24 is in contact with the inner peripheral surface (the lower surface in FIG.
  • the first mold part 110 is removed from the second mold part 120 (see FIG. 7B).
  • the first mold part 110 positioned on each side of the side part of the intermediate member 190 is removed.
  • the sealing resin material 81 and the external resin material 91 are cured to become the sealing resin 80 and the external resin 90, respectively.
  • the sealing resin material 81 and the external resin material 91 may be cured at the same time, but may be cured at different timings.
  • the sealing resin material 81 may be cured before the first mold part 110 is removed from the second mold part 120.
  • the semiconductor module 100 of the present embodiment is manufactured.
  • the sealing resin 80 since the entire sealing resin 80 is covered with the metal frame body 70, an overcurrent flows through the first electronic element 13 or the second electronic element 23 and the sealing resin 80 is carbonized. Even in this case, it is possible to prevent the occurrence of defects due to the heat of the carbonized sealing resin 80. More specifically, even if the sealing resin 80 is carbonized to a high temperature, the sealing resin 80 that has been carbonized to a high temperature can be prevented from coming into contact with outside air or the like. It is possible to prevent the occurrence of defects caused by In the present embodiment, since the entire mounting area of the first insulating substrate 11 is covered with the frame body 70, each of the first electronic elements 13 is mounted even if the plurality of first electronic elements 13 are mounted. It is possible to prevent the heat caused by the first electronic element 13 from spreading outside the frame body 70.
  • the entire mounting area corresponding to the first electronic elements 13 and the second electronic elements 23 is sealed.
  • the sealing resin 80 is covered, and the entire sealing resin 80 is covered with the frame body 70. Therefore, even when the sealing resin 80 is carbonized as a result of an overcurrent flowing through any one of the electronic elements 13 and 23, it is possible to prevent the occurrence of defects due to the heat of the carbonized sealing resin 80.
  • each of the first electronic element 13 and the second electronic element 23 of the present embodiment is a power device
  • devices with high exothermic properties are arranged to face each other. For this reason, the necessity to reduce the risk due to heat generated from the first electronic element 13 or the second electronic element 23 is increased.
  • the sealing resin 80 since the entire sealing resin 80 is covered with the frame body 70, the sealing resin 80 is carbonized due to heat generation from the first electronic element 13 or the second electronic element 23. Even so, it is possible to prevent the occurrence of defects due to the heat of the carbonized sealing resin 80.
  • the external resin 90 when an aspect in which the external resin 90 is provided outside the frame body 70 is adopted, the impact on the frame body 70, and thus the first electronic element 13 and the second electronic element 23 can be absorbed.
  • the external resin 90 is provided so as to cover the entire side surface of the frame body 70, and the upper surface of the frame body 70 (hereinafter referred to as “the heat dissipation surface of the frame body 70”) and the first.
  • the heat sink 14 is not covered with the external resin 90. For this reason, the heat generated in the frame 70 can be radiated from both the heat radiating surface of the frame 70 and the first heat radiating plate 14.
  • the frame body 70 covers the entire sealing resin 80.
  • the external resin 90 disposed so as to surround the frame body 70 is made of a flame-retardant material.
  • the external resin 90 is incombustible as compared with the sealing resin 80, so even if the sealing resin 80 is carbonized, the external resin 90 is reached via the frame 70. This is because it is possible that the external resin 90 is not carbonized by heat.
  • the second embodiment is an electronic device having the semiconductor module 100 described in the first embodiment and a heat sink 200 provided with a recess 210 for inserting the semiconductor module 100. It relates to equipment.
  • the size of the recess 210 is made to match the size of the semiconductor module 100. Therefore, the semiconductor module 100 can be fixed to the heat sink 200 by inserting the semiconductor module 100 into the recess 210.
  • the recess 210 of the heat sink 200 may be coated with a lubricant made of silicon grease or the like. By applying such a lubricant, the semiconductor module 100 can be easily inserted into the recess 210 of the heat sink 200. Further, by using a lubricant, it is possible to improve the adhesion between the heat dissipation surface of the frame body 70 and the first heat dissipation plate 14 and the inner surface of the recess 210, and consequently increase the thermal conductivity from the semiconductor module 100 to the heat sink 200. Can do. Therefore, higher heat dissipation can be realized.
  • a plurality of grooves 210 may be formed on the inner surface of the recess 210 of the heat sink 200 along the insertion direction of the semiconductor module 100 (vertical direction in FIG. 8). Even when the semiconductor module 100 is inserted after the lubricant is placed in the recess 210, by forming such a groove 210, the lubricant is introduced along the insertion direction of the semiconductor module 100 by capillary action. This is because it can be moved upward.
  • the third electronic element 113 is provided on the first insulating substrate 11 via the third conductor layer 112, and the fourth insulating element 21 is provided on the second insulating substrate 21.
  • the fourth electronic element 123 may be provided via the conductor layer 122.
  • the third electronic element 113 and the fourth electronic element 123 may be connected via a conductor post 131.
  • this FIG. 9 is a figure seen from the back side, and a lead frame, a connection part, etc. are abbreviate
  • the second electronic element 23 is provided in the first electronic element 13 via the conductor pillar 31 and the connection body 46a
  • the fourth electronic element 113 is provided in the third electronic element 113 via the conductor pillar 131 and the connection body 146a.
  • An electronic element 123 is provided.
  • a conductor post 39 is provided between the second electronic element 23 and the second conductor layer portion 22 b
  • a conductor pillar 139 is provided between the fourth electronic element 123 and the fourth conductor layer 122. Is provided.
  • FIG. 11 a circuit diagram in the case of using four devices as shown in FIG. 9 and FIG.
  • a portion surrounded by a dotted line is a portion corresponding to the semiconductor module of the present embodiment.
  • the frame body 70 covers the electronic elements 13, 23, 113, 123 and the conductor layers 12, 22, 112, 123. Then, the sealing resin 80 is filled in the frame body 70.
  • the external resin 90 may be provided so as to cover the entire side surface of the frame body 70 or the entire outer peripheral surface of the frame body 70.
  • three or more devices may be stacked.
  • the first electronic element 13 and the second electronic element 23 are shifted in directions different by 180 degrees (shifted in the left-right direction in FIG. 12), and the third electronic element 113 and the fourth electronic element are shifted.
  • the first electronic element 13 and the third electronic element 113 are not displaced, and the second electronic element 23 and the fourth electronic element 123 are absent. It may be like this.
  • the fourth conductor layer 122 is provided on the lower surface of the third insulating substrate 111, and the third conductor layer 112 is provided on the upper surface of the second insulating substrate 21.
  • the arrangement of the third member 110 including the third conductor layer 112 and the third electronic element 113 in the horizontal direction is the same as or similar to that of the first member 10. Further, the horizontal arrangement of the fourth member 120 including the fourth conductor layer 122 and the fourth electronic element 123 is the same as or similar to that of the second member 20.
  • the horizontal arrangement of the members (third conductor layer 112, third electronic element 113, etc.) included in the third member 110 is a member included in the first member 10 ( Compared with the horizontal arrangement of the first conductor layer 12, the first electronic element 13, etc., the member (fourth conductor) included in the fourth member 120 is different by 90 degrees in the clockwise direction when viewed from above.
  • the horizontal arrangement of the layer 122, the fourth electronic element 123, etc. is higher than the horizontal arrangement of the members (the first conductor layer 12, the first electronic element 13, etc.) included in the first member 10. 270 degrees in the clockwise direction when viewed from the top.
  • the arrangement in the horizontal direction of the members included in the third member 110 is the member included in the first member 10 (the first conductor layer 12, the first electronic element). 13) and the like in the horizontal direction when viewed from above, the members included in the fourth member 120 (fourth conductor layer 122, fourth electronic element 123, etc.)
  • the horizontal arrangement of the first member 10 differs by 90 degrees in the clockwise direction when viewed from above compared to the horizontal arrangement of the members (the first conductor layer 12, the first electronic element 13, etc.) included in the first member 10. It may be like that.
  • circuit diagram may be as shown in FIG. 11 as an example.
  • the frame body 70 may cover more devices.
  • the electronic elements 501 to 512 surrounded by the one-dot chain line in FIG. 13 are covered with the frame.
  • Reference numerals 501 to 506 are examples of switching elements
  • reference numerals 507 to 512 are examples of rectifying elements.
  • the switch element 501 and the rectifying element 507 are arranged to face each other and connected by a conductor column
  • the switch element 502 and the rectifying element 508 are arranged to face each other and are arranged by the conductor column.
  • the switch element 503 and the rectifier element 509 are arranged to face each other and connected by a conductor column
  • the switch element 504 and the rectifier element 510 are arranged to face each other and connected by a conductor column
  • the rectifying element 511 may be arranged to face each other and connected by a conductor column
  • the switch element 506 and the rectifying element 512 may be arranged to face each other and be connected by a conductor column.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

Un module semi-conducteur (100) ayant : un premier substrat isolant (11); une première couche de conducteur (12) disposé sur une surface de montage pour le premier substrat isolant (11); un premier élément électronique (13) prévu sur la première couche conductrice (12); une résine d'étanchéité (80) qui recouvre la totalité de la zone de montage à l'intérieur de la surface de montage du premier substrat isolant (11), la première couche conductrice (12), et le premier élément électronique (13); et un cadre métallique (70) recouvrant la totalité de la résine d'étanchéité (80).
PCT/JP2015/002284 2015-04-28 2015-04-28 Module semi-conducteur et son procédé de production WO2016174697A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP15860021.3A EP3163608A4 (fr) 2015-04-28 2015-04-28 Module semi-conducteur et son procédé de production
JP2016513152A JP6166460B2 (ja) 2015-04-28 2015-04-28 半導体モジュール及び半導体モジュールの製造方法
US15/106,804 US9892993B2 (en) 2015-04-28 2015-04-28 Semiconductor module having stacked insulated substrate structures
CN201580003247.1A CN106463481B (zh) 2015-04-28 2015-04-28 半导体模块以及半导体模块的制造方法
PCT/JP2015/002284 WO2016174697A1 (fr) 2015-04-28 2015-04-28 Module semi-conducteur et son procédé de production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/002284 WO2016174697A1 (fr) 2015-04-28 2015-04-28 Module semi-conducteur et son procédé de production

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WO2016174697A1 true WO2016174697A1 (fr) 2016-11-03

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US (1) US9892993B2 (fr)
EP (1) EP3163608A4 (fr)
JP (1) JP6166460B2 (fr)
CN (1) CN106463481B (fr)
WO (1) WO2016174697A1 (fr)

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JP7095632B2 (ja) * 2019-03-11 2022-07-05 株式会社デンソー 半導体装置
KR20210063734A (ko) * 2019-11-25 2021-06-02 현대자동차주식회사 전력모듈 및 전력모듈에 적용되는 기판 구조
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JP6166460B2 (ja) 2017-07-19
US9892993B2 (en) 2018-02-13
CN106463481A (zh) 2017-02-22
CN106463481B (zh) 2019-11-08
EP3163608A1 (fr) 2017-05-03
EP3163608A4 (fr) 2017-11-01
JPWO2016174697A1 (ja) 2017-05-18
US20170133294A1 (en) 2017-05-11

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