WO2016114120A1 - セラミック基板 - Google Patents
セラミック基板 Download PDFInfo
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- WO2016114120A1 WO2016114120A1 PCT/JP2016/000081 JP2016000081W WO2016114120A1 WO 2016114120 A1 WO2016114120 A1 WO 2016114120A1 JP 2016000081 W JP2016000081 W JP 2016000081W WO 2016114120 A1 WO2016114120 A1 WO 2016114120A1
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- ceramic layer
- ceramic
- ceramic substrate
- conductor pattern
- silver
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
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- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
- H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
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- H05K3/22—Secondary treatment of printed circuits
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4664—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
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- H05K2201/07—Electric details
- H05K2201/0753—Insulation
- H05K2201/0769—Anti metal-migration, e.g. avoiding tin whisker growth
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49163—Manufacturing circuit on or in base with sintering of base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient
Definitions
- the present invention relates to a ceramic substrate.
- a ceramic substrate having a ceramic layer mainly made of glass ceramics and a conductor pattern mainly containing silver (Ag) is known.
- Such a ceramic substrate is formed by applying a conductive paste which is a form before firing of a conductor pattern to a green sheet which is a form before firing of the ceramic layer, and then firing.
- a ceramic substrate is also called a low temperature co-fired ceramic (LTCC) substrate.
- the silver component of the conductor paste may diffuse into the ceramic layer, resulting in voids, deformation, or discoloration in the ceramic layer. It is considered that diffusion of the silver component into the ceramic layer is promoted by oxidation of the silver component contained in the conductor pattern.
- Patent Document 1 discloses a technique for suppressing diffusion of a silver component into a ceramic layer by covering the surface of silver powder contained in a conductor paste with an antimony salt.
- Patent Document 2 discloses a technique for suppressing diffusion of a silver component into a ceramic layer by adding silicon powder to a conductor paste.
- the present invention has been made to solve the above-described problems, and can be realized as the following modes.
- One embodiment of the present invention provides a ceramic substrate comprising a ceramic layer mainly composed of glass ceramics; and a conductor pattern mainly composed of silver (Ag).
- the concentration of boron atoms (B) contained in the ceramic layer increases as it approaches the conductor pattern in an adjacent region adjacent to the conductor pattern. According to this aspect, it is possible to suppress the occurrence of voids, deformation, discoloration and the like in the ceramic layer due to the diffusion of the silver component. As a result, the quality of the ceramic substrate can be improved.
- the adjacent region has a region containing boron atoms (B) having a concentration three or more times higher than the central region located in the center of the ceramic layer in the thickness direction. Also good. According to this embodiment, it is possible to sufficiently suppress the occurrence of voids, deformation, and discoloration in the ceramic layer due to the diffusion of the silver component.
- At least one of a lanthanum atom (La) and a titanium atom (Ti) may be present in the conductor pattern. According to this aspect, it is possible to suppress the occurrence of voids, deformation, discoloration and the like in the ceramic layer due to the diffusion of the silver component.
- the ceramic layer may include borosilicate glass and alumina (Al 2 O 3 ). According to this embodiment, the quality of the borosilicate glass-based ceramic substrate can be improved.
- the present invention is not limited to the ceramic substrate and can be realized in various forms, for example, in the form of a manufacturing method for manufacturing a ceramic substrate, an apparatus including the ceramic substrate, a manufacturing apparatus for manufacturing the ceramic substrate, and the like.
- FIG. 1 is an explanatory view schematically showing a cross section of a ceramic substrate 110.
- the ceramic substrate 110 is a low temperature co-fired ceramic (LTCC) substrate.
- the ceramic substrate 110 is formed with at least a part of a circuit that realizes a predetermined function.
- the ceramic substrate 110 is formed with a circuit for transmitting a signal using an electronic component or the like.
- the ceramic substrate 110 includes a ceramic layer 120 and a conductor pattern 130.
- the ceramic substrate 110 has a structure in which a conductor pattern 130 is formed between the ceramic layers 120 stacked on each other.
- the ceramic substrate 110 is provided with vias and through holes (not shown) in addition to the conductor pattern 130 as conductors constituting the circuit.
- two or more conductor patterns 130 may be further stacked together with other ceramic layers 120.
- the ceramic layer 120 of the ceramic substrate 110 has electrical insulation.
- the ceramic layer 120 is mainly made of glass ceramics.
- “consisting mainly of (component)” means that the component occupies 50% by mass or more of the whole.
- the ceramic layer 120 is a ceramic layer obtained by firing borosilicate glass powder and alumina (Al 2 O 3 ) powder.
- Borosilicate glass is mainly composed of silicon dioxide (SiO 2 ), alumina (Al 2 O 3 ), and boron oxide (B 2 O 3 ).
- the ceramic layer 120 has an adjacent region 121 adjacent to the conductor pattern 130.
- concentration of the boron atom (B) contained in the ceramic layer 120 becomes so high that the conductor pattern 130 is approached in the adjacent area
- the adjacent region 121 contains boron atoms (B) whose concentration of boron atoms (B) is three or more times higher than the central region located in the center of the ceramic layer 120 in the thickness direction. Has a region.
- the conductor pattern 130 of the ceramic substrate 110 is mainly made of silver (Ag).
- the conductor pattern 130 contains silver (Ag) powder and borosilicate glass powder, and has conductivity.
- the conductor pattern 130 has at least one of lanthanum atoms (La) and titanium atoms (Ti).
- the thickness of the conductor pattern 130 is about 10 ⁇ m.
- FIG. 2 is a process diagram showing a method for manufacturing the ceramic substrate 110. First, the green sheet which is the state before baking of the ceramic layer 120 is produced (process P110).
- the green sheet is formed by mixing an inorganic component powder with a binder (binder), a plasticizer, a solvent, and the like to form a thin plate (sheet).
- a binder binder
- plasticizer plasticizer
- a solvent solvent
- the like borosilicate glass powder and alumina powder, which are inorganic component powders, are weighed so that the volume ratio is 60:40 and the total amount is 1 kg, and these powders are then made into an alumina container (pot). Put in. Thereafter, 120 g of acrylic resin as a binder, an appropriate amount of methyl ethyl ketone (MEK) as a solvent, and an appropriate amount of dioctyl phthalate (DOP) as a plasticizer are added to the material in the pot.
- MEK methyl ethyl ketone
- DOP dioctyl phthalate
- the ceramic slurry is obtained by mixing the materials in the pot for 5 hours. Thereafter, a green sheet is produced from the ceramic slurry by a doctor blade method.
- the green sheet has a thickness of 0.15 mm.
- the green sheet is formed by punching.
- a conductor paste in a state before firing the conductor pattern 130 is produced (process P120).
- the conductor paste which is a form before firing of the conductor pattern 130 is a paste obtained by adding metal boride powder to silver (Ag) powder.
- metal borides added to the conductor paste are lanthanum hexaboride (LaB 6 ), silicon hexaboride (SiB 6 ), and titanium diboride (TiB 2). ) Is preferred. From the viewpoint of sufficiently suppressing the diffusion of silver into the ceramic layer 120, the total content of the metal boride and the metal silicide in the inorganic component contained in the conductor paste is 3% by volume or more and 9% by volume or less. preferable.
- boron (Ag) powder which is a conductor material, is used as an inorganic component material of the conductor paste, and boron that is common to the components of the ceramic layer 120 is used.
- a mixed powder prepared by mixing silicate glass powder is prepared. Thereafter, metal boride powder, ethyl cellulose as a binder, and terpineol as a solvent are added to the mixed powder of inorganic components. Thereafter, the material is kneaded using a three-roll mill to obtain a conductor paste.
- the conductor paste is applied to the green sheet (process P130).
- the conductor paste is applied to the green sheet by screen printing.
- the green sheet coated with the conductor paste is fired (process P140). Thereby, the ceramic substrate 110 is completed.
- a laminate in which a plurality of green sheets are laminated is produced before firing the green sheet.
- the laminate is formed into a shape suitable for firing by cutting.
- the laminate is degreased by exposing the laminate to the atmosphere at 250 ° C. for 10 hours.
- a laminated body is baked by exposing a laminated body to 850 degreeC air
- the metal boride which is an additive component oxidized during firing, diffuses into the adjacent region 121 adjacent to the conductor pattern 130 in the ceramic layer 120. Therefore, the concentration of boron atoms (B) contained in the ceramic layer 120 becomes higher as the conductor pattern 130 is approached in the adjacent region 121 adjacent to the conductor pattern 130. From the viewpoint of sufficiently suppressing the diffusion of silver into the ceramic layer 120, the adjacent region 121 contains boron atoms (B) having a concentration three times or more that of the central region located in the center of the ceramic layer 120 in the thickness direction. It is preferable to have a containing region.
- the conductor pattern 130 contains lanthanum atoms (La) derived from the added components.
- the conductor pattern 130 contains titanium atoms (Ti) derived from the added components.
- FIG. 3 is a table showing the results of the evaluation test.
- samples S01 to S07 were produced as ceramic substrates 110 using different conductive pastes.
- the content of the additive in the conductor paste in the state before firing the conductor pattern 130 indicates the volume percentage of the additive in the inorganic component contained in the ceramic paste.
- the manufacturing method of the samples S01 to S06 is the same as the manufacturing method of FIG.
- the manufacturing method of sample S07 is the same as the manufacturing method of FIG. 2 except that no metal boride is added to the conductor paste.
- the diffusion distance of boron (B) and silver (Ag) into the ceramic layer 120 was measured by observing the cross section of each sample using a scanning electron microscope (SEM) and an electron beam microanalyzer (EPMA).
- SEM scanning electron microscope
- EPMA electron beam microanalyzer
- the boron (B) concentration in the central region located in the center in the thickness direction of the ceramic layer 120 is a reference value, and the boron (B) concentration is less than three times the reference value from the interface between the ceramic layer 120 and the conductor pattern 130.
- the distance to this position was measured at 10 locations as the boron diffusion distance.
- the silver (Ag) concentration at the interface between the ceramic layer 120 and the conductor pattern 130 is taken as a reference value, and the distance from the interface to the position where the silver (Ag) concentration is half the reference value in the ceramic layer 120 is measured at 10 points. The average value was obtained as the silver diffusion distance.
- lanthanum hexaboride (LaB 6 ), silicon hexaboride (SiB 6 ) and titanium diboride (TiB 2 ), which are metal borides, were used as conductor patterns. It can be seen that by adding to the conductive paste in the form before firing 130, silver diffusion into the ceramic layer 120 can be suppressed. Further, when the content of the metal boride in the inorganic component contained in the conductor paste in a state before firing the conductor pattern 130 is 3% by volume or more and 9% by volume or less, sufficient diffusion of silver into the ceramic layer 120 is achieved. It can be seen that it can be suppressed.
- the ceramic layer 120 contains boron atoms (B) having a concentration three times or more than the central region located in the center in the thickness direction. It can be seen that the region to be formed is formed as the adjacent region 121.
- the concentration of boron atoms (B) contained in the ceramic layer 120 increases as the conductor pattern 130 is approached in the adjacent region 121 adjacent to the conductor pattern 130.
- the adjacent region 121 has a region containing boron atoms (B) having a concentration three times or more than the central region located in the center in the thickness direction of the ceramic layer 120. For this reason, it is possible to sufficiently suppress the occurrence of voids, deformation, discoloration and the like in the ceramic layer 120 due to the diffusion of the silver component.
- B boron atoms
- the metal boride powder when producing a conductor paste that is in a state before firing of the conductor pattern 130 (process P120), before adding a binder and a solvent to the raw material powder, the metal boride powder is mixed with the raw material powder.
- the metal boride powder may be adhered to the surface of the silver (Ag) powder. Thereby, diffusion of the silver component from the conductor pattern 130 to the ceramic layer 120 can be further suppressed.
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Abstract
Description
図1は、セラミック基板110の断面を模式的に示す説明図である。セラミック基板110は、低温同時焼成セラミックス(LTCC)基板である。セラミック基板110には、所定の機能を実現する回路の少なくとも一部が形成されている。本実施形態では、セラミック基板110には、電子部品等で信号を伝達する回路が形成されている。
○(優):銀の拡散距離が5μm未満
×(劣):銀の拡散距離が5μm以上
本発明は、上述の実施形態や実施例、変形例に限られず、その趣旨を逸脱しない範囲において種々の構成で実現できる。例えば、発明の概要の欄に記載した各形態中の技術的特徴に対応する実施形態、実施例、変形例中の技術的特徴は、上述の課題の一部または全部を解決するために、あるいは、上述の効果の一部または全部を達成するために、適宜、差し替えや、組み合わせを行うことができる。また、その技術的特徴が本明細書中に必須なものとして説明されていなければ、適宜、削除できる。
120…セラミック層
121…隣接領域
130…導体パターン
Claims (4)
- ガラスセラミックスから主に成るセラミック層と、
銀(Ag)から主に成る導体パターンと
を備えるセラミック基板であって、
前記セラミック層に含まれるホウ素原子(B)の濃度は、前記導体パターンに隣接する隣接領域において前記導体パターンに近づくほど高くなることを特徴とするセラミック基板。 - 前記隣接領域は、前記セラミック層のうち厚さ方向の中央に位置する中央領域よりも3倍以上の濃度となるホウ素原子(B)を含有する領域を有する、請求項1に記載のセラミック基板。
- 前記導体パターンには、ランタン原子(La)およびチタン原子(Ti)の少なくとも一方が存在する、請求項1または請求項2に記載のセラミック基板。
- 前記セラミック層は、ホウケイ酸ガラスおよびアルミナ(Al2O3)を含む、請求項1から請求項3までのいずれか一項に記載のセラミック基板。
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KR1020177019498A KR102059318B1 (ko) | 2015-01-13 | 2016-01-08 | 세라믹 기판 |
CN201680005732.7A CN107113969B (zh) | 2015-01-13 | 2016-01-08 | 陶瓷基板 |
EP16737191.3A EP3247180A4 (en) | 2015-01-13 | 2016-01-08 | Ceramic substrate |
US15/542,871 US10524365B2 (en) | 2015-01-13 | 2016-01-08 | Ceramic substrate |
JP2016541735A JP6553048B2 (ja) | 2015-01-13 | 2016-01-08 | セラミック基板 |
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PCT/JP2016/000081 WO2016114120A1 (ja) | 2015-01-13 | 2016-01-08 | セラミック基板 |
PCT/JP2016/000082 WO2016114121A1 (ja) | 2015-01-13 | 2016-01-08 | セラミック基板の製造方法、セラミック基板及び銀系導体材料 |
PCT/JP2016/000079 WO2016114118A1 (ja) | 2015-01-13 | 2016-01-08 | 回路基板およびその製造方法 |
PCT/JP2016/000080 WO2016114119A1 (ja) | 2015-01-13 | 2016-01-08 | セラミック基板およびその製造方法 |
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PCT/JP2016/000079 WO2016114118A1 (ja) | 2015-01-13 | 2016-01-08 | 回路基板およびその製造方法 |
PCT/JP2016/000080 WO2016114119A1 (ja) | 2015-01-13 | 2016-01-08 | セラミック基板およびその製造方法 |
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US (5) | US20180035549A1 (ja) |
EP (4) | EP3247182A4 (ja) |
JP (4) | JP6261746B2 (ja) |
KR (4) | KR102017401B1 (ja) |
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WO2016114120A1 (ja) * | 2015-01-13 | 2016-07-21 | 日本特殊陶業株式会社 | セラミック基板 |
CN110255912A (zh) * | 2019-07-03 | 2019-09-20 | 东北大学秦皇岛分校 | 一种微晶玻璃工艺品的制作方法 |
CN111312427B (zh) * | 2020-04-17 | 2021-08-31 | 洛阳理工学院 | 一种用于低温共烧低介电常数介质陶瓷的多层布线用银浆 |
CN112225547B (zh) * | 2020-10-19 | 2022-04-19 | 上海晶材新材料科技有限公司 | Ltcc材料、基板及制备方法 |
CN112235959A (zh) * | 2020-10-28 | 2021-01-15 | 上海读家电子科技有限公司 | 可加强铂钯银导体抗银迁移能力的陶瓷电路板制造方法 |
US20220367363A1 (en) * | 2021-05-17 | 2022-11-17 | Onano Industrial Corp. | Ltcc electronic device unit structure |
CN113690033A (zh) * | 2021-07-23 | 2021-11-23 | 东莞市优琥电子科技有限公司 | 变压器和电源适配器 |
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