WO2016061860A1 - 一种压电石英晶体谐振器及其制作方法 - Google Patents

一种压电石英晶体谐振器及其制作方法 Download PDF

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Publication number
WO2016061860A1
WO2016061860A1 PCT/CN2014/091108 CN2014091108W WO2016061860A1 WO 2016061860 A1 WO2016061860 A1 WO 2016061860A1 CN 2014091108 W CN2014091108 W CN 2014091108W WO 2016061860 A1 WO2016061860 A1 WO 2016061860A1
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WIPO (PCT)
Prior art keywords
quartz crystal
crystal resonator
thermistor
circuit board
disposed
Prior art date
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PCT/CN2014/091108
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English (en)
French (fr)
Inventor
孙晓明
梁惠萍
吴广宇
谢俊超
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应达利电子(深圳)有限公司
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Application filed by 应达利电子(深圳)有限公司 filed Critical 应达利电子(深圳)有限公司
Priority to KR1020177003747A priority Critical patent/KR102293591B1/ko
Priority to JP2016562210A priority patent/JP6560691B2/ja
Publication of WO2016061860A1 publication Critical patent/WO2016061860A1/zh
Priority to US15/403,168 priority patent/US10727801B2/en
Priority to US16/888,829 priority patent/US20200295726A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0478—Resonance frequency in a process for mass production
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/49798—Dividing sequentially from leading end, e.g., by cutting or breaking

Definitions

  • the present invention relates to a resonator, and more particularly to a piezoelectric quartz crystal resonator and a method of fabricating the same.
  • Piezoelectric quartz crystal resonators although the frequency and temperature characteristics are better, in order to meet the higher frequency stability, it is necessary to collect the ambient temperature of the piezoelectric quartz crystal or the piezoelectric quartz crystal, and compensate the frequency and temperature characteristics accordingly. Corrected to meet actual usage requirements.
  • a piezoelectric quartz crystal resonator containing a thermistor is a device in which a thermistor and a piezoelectric quartz crystal resonator plate are enclosed in the same cavity, or a thermistor and a piezoelectric quartz crystal resonator plate are respectively packaged on the upper and lower sides of the substrate. Two sides. The method of enclosing a thermistor and a piezoelectric quartz crystal in a cavity easily contaminates the piezoelectric quartz crystal resonator plate and affects the stability of the resonator parameters.
  • the method of encapsulating the thermistor and the piezoelectric quartz crystal on the upper and lower sides of the substrate, although the cavity is separated, causes an increase in the cost of the susceptor, and at the same time, the production cost is increased because the assembly process requires special equipment.
  • the technical problem to be solved by the present invention is to provide a piezoelectric quartz crystal resonator and a manufacturing method thereof, which aim to solve the problem that the thermistor and the quartz crystal resonator packaged in a cavity in the prior art are contaminated by the quartz crystal resonator. problem.
  • the present invention is achieved by a piezoelectric quartz crystal resonator including a circuit board, a quartz crystal resonator, and a thermistor for detecting a temperature of the quartz crystal resonator, the heat sensitivity a resistor and the quartz crystal resonator are disposed on the circuit board and connected to each other by a line disposed on the circuit board; the thermistor and the quartz crystal resonator are potted independently of each other by a thermoplastic material And there is contact between the two thermoplastic materials used for potting.
  • the thermistor and the quartz crystal resonator are arranged side by side on the same side of the circuit board, and a gap is reserved between the thermistor and the quartz crystal resonator.
  • the thermistor is disposed on a back surface of the quartz crystal resonator, and a pad of the thermistor is connected to a pad of the quartz crystal resonator.
  • a through hole is disposed in an intermediate position of the circuit board where the quartz crystal resonator is placed, and the thermistor is disposed in the through hole.
  • the invention also provides a method for fabricating a piezoelectric quartz crystal resonator, comprising the following steps:
  • Step A setting a plurality of design units on the circuit board, wherein each design unit includes a quartz crystal resonator and a thermistor, and a dividing gap is reserved between adjacent design units;
  • Step B In each of the design units, an extraction pad of a quartz crystal resonator is disposed on a bottom layer of the circuit board, and a top layer of the circuit board is provided for soldering a pad of the quartz crystal resonator; and simultaneously soldering in the quartz crystal resonator A pad corresponding to the thermistor is disposed on the same side or the opposite side of the disk;
  • Step C soldering the quartz crystal resonator and the thermistor to corresponding pad positions respectively;
  • Step D using a thermoplastic material to independently seal the soldered quartz crystal resonator and the thermistor, and the two are used for contact between the potting thermoplastic materials;
  • Step E dividing the injection molded circuit board in units of the design unit.
  • the step C specifically includes the following steps:
  • Step C01 printing a solder paste on the pad of the circuit board, and attaching the quartz crystal resonator and the thermistor to corresponding positions;
  • step C02 the circuit board in step C01 is reflowed, and the flux on the circuit board is cleaned.
  • the step C specifically includes the following steps:
  • Step C101 a through hole is disposed in a middle position of each of the quartz crystal resonators in the circuit board, and the pads of the thermistor are located at both ends of the through hole;
  • Step C102 printing solder paste on the pads of all the quartz crystal resonators in the circuit board, attaching the quartz crystal resonator to the corresponding position, and performing reflow soldering to make the soldering firm;
  • Step C103 placing solder paste on the pads of all the thermistors on the other side of the circuit board, attaching the thermistor to the corresponding position, performing reflow soldering to make the soldering firm, and cleaning the circuit board.
  • Step C104 dispensing the through hole to fill the gap between the quartz crystal resonator, the thermistor and the circuit board.
  • design units in the step A are arranged in a matrix.
  • the piezoelectric quartz crystal resonator is configured such that the quartz crystal resonator and the thermistor are disposed on a circuit board and then injection molded using a resin to form a quartz crystal.
  • the resonator has a separate cavity to avoid contamination of the quartz crystal resonator by the thermistor, while meeting the need for higher frequency stability.
  • FIG. 1 is a schematic diagram of a design unit circuit board of a first manufacturing method of a piezoelectric quartz crystal resonator of the present invention
  • Figure 2 is a schematic diagram of a matrix composed of several design units in Figure 1;
  • Figure 3 is a schematic view of the circuit board pad of Figure 2 after printing solder paste
  • Figure 4 is a schematic view of the electric quartz crystal resonator and the thermistor welded in Figure 3;
  • Figure 5 is a schematic view of Figure 4 after injection molding
  • Figure 6 is a schematic view of the division of Figure 5 into a single quartz crystal resonator
  • Figure 7 is an exploded perspective view of Figure 6;
  • FIG. 8 is a schematic diagram of a design unit circuit board of a second manufacturing method of the piezoelectric quartz crystal resonator of the present invention.
  • Figure 9 is a schematic diagram of a matrix composed of several design units in Figure 8.
  • Figure 10 is a schematic view of the circuit board pad of Figure 9 after printing solder paste
  • Figure 11 is a schematic view of the welded electric quartz crystal resonator of Figure 10.
  • Figure 12 is a schematic view of the solder thermistor of Figure 11;
  • Figure 13 is a schematic view of the through hole of Figure 12 after filling
  • Figure 14 is a schematic view showing the division of Figure 13;
  • Figure 15 is an exploded perspective view of Figure 14.
  • a piezoelectric quartz crystal resonator 100 includes a circuit board 103, a quartz crystal resonator 101, and a thermistor 102 for detecting the temperature of the quartz crystal resonator 101.
  • the thermistor 102 and the quartz crystal resonator 101 are disposed on the circuit board 103, and are connected to each other by a line disposed on the circuit board 103, that is, the pad 1011 of the quartz crystal resonator 101 is disposed in the circuit board 103.
  • the line is connected to the pad 1021 of the thermistor 102.
  • the thermistor 102 and the quartz crystal resonator 101 are potted independently of each other by the thermoplastic material 104, and the two are used for contact between the potting thermoplastic materials, that is, the quartz crystal resonator 101 has a separate cavity.
  • FIG. 1 to 7 show a first embodiment of a piezoelectric quartz crystal resonator 100.
  • the thermistor 102 and the quartz crystal resonator 101 are arranged side by side on the same side of the circuit board 103, and the thermistor 102 and A gap is reserved between the quartz crystal resonators 101.
  • a second embodiment of the piezoelectric quartz crystal resonator 100 is disposed.
  • the thermistor 102 is disposed on the back surface of the quartz crystal resonator 101, and the pad 1021 of the thermistor 102 resonates with the quartz crystal.
  • the pads 1011 of the device 101 are connected.
  • a through hole 106 is disposed in the intermediate position of the circuit board 103 at which the quartz crystal resonator 101 is placed, and the thermistor 102 is fixedly disposed in the through hole 106.
  • FIGS. 1 to 7 are schematic views of respective steps in the first manufacturing method
  • FIGS. 8 to 15 are schematic views of respective steps in the second manufacturing method. These two production methods mainly differ in steps A and C.
  • the production method includes the following steps:
  • Step A A plurality of design units are disposed on the circuit board 103, wherein each design unit includes a quartz crystal resonator 101 and a thermistor 102, and a division gap is reserved between adjacent design units, as shown in FIG. 1 or Figure 8 shows.
  • each design unit includes a quartz crystal resonator 101 and a thermistor 102, and a division gap is reserved between adjacent design units, as shown in FIG. 1 or Figure 8 shows.
  • several design units can be arranged in a matrix and appropriate split gaps are reserved between the various design units, as shown in FIGS. 2 and 9.
  • Step B the extraction pad of the quartz crystal resonator 101 is disposed on the bottom layer of the circuit board 103, and the top layer of the circuit board 103 is provided with the pad 1011 for soldering the quartz crystal resonator 101; at the same time, the same as the quartz crystal resonator pad 1011 A pad 1021 corresponding to the thermistor 102 is disposed on the side or the opposite side.
  • step C the quartz crystal resonator 101 and the thermistor 102 are respectively soldered to the pads at the corresponding positions.
  • Step D using the thermoplastic material 104, the soldered quartz crystal resonator 101 and the thermistor 102 are potted independently of each other, and the two are used for contact between the potting thermoplastic materials.
  • step E the injection molded circuit board is divided in units of the design unit, so that each of the divided piezoelectric quartz crystal resonators 100 includes a thermistor 102 and a quartz crystal resonator 101.
  • the pad 1011 of the quartz crystal resonator and the pad 1021 of the thermistor 102 are disposed adjacent to each other on the same side.
  • four pads are disposed on the bottom layer of the circuit board 103, and the four pads are the extraction pads of the quartz crystal resonator 101.
  • the four pads are pad A, pad B, pad C, and Pad D.
  • the pad A is the first electrode of the quartz crystal resonator 101
  • the pad B is the ground terminal, and is connected to the second terminal of the thermistor 102
  • the pad C is the second electrode of the quartz crystal resonator 101
  • the pad D It is the first terminal of the thermistor 102.
  • step C specifically includes the following steps: step C01, printing solder paste on the pads of the circuit board 103 (including the pad 1011 of the quartz crystal resonator 101 and the pad 1021 of the thermistor 102) 105, as shown in FIG. 3, attaches the quartz crystal resonator 101 and the thermistor 102 to the corresponding positions.
  • step C02 reflowing the circuit board in step C01, and cleaning the flux on the circuit board, as shown in FIG.
  • the second fabrication method is to place the pad 1011 of the quartz crystal resonator and the pad 1021 of the thermistor 102 on the opposite side.
  • the present invention places the thermistor 102 on the back side of the quartz crystal resonator 101 and is located in the circuit board 103 as shown in FIG.
  • the bottom layer of the circuit board 103 is provided with four pads which are the extraction pads of the quartz crystal resonator 101.
  • the four pads are the pad A, the pad B, the pad C, and the pad D, respectively.
  • the pad A is the first electrode of the quartz crystal resonator 101
  • the pad B is the ground terminal, and is connected to the second terminal of the thermistor 102
  • the pad C is the second electrode of the quartz crystal resonator 101
  • the pad D It is the first terminal of the thermistor 102.
  • the top layer of the circuit board 103 is placed with four corresponding pads of the quartz crystal resonator 101 package for soldering the quartz crystal resonator 101.
  • a through hole 106 is formed in the four pads of the ABCD of the circuit board 103, and the side pads 1021 are designed at both ends of the through hole 106 for mounting and soldering the thermistor 102.
  • the corresponding pads of the top layer are connected to the underlying pads through conductors, metallized vias, and the thickness of the circuit board 103 is slightly larger than the thickness of the thermistor 102, as shown in FIG.
  • the step C specifically includes the steps of: placing a solder paste 105 on the pads 1011 of all the quartz crystal resonators 101 in the circuit board 103, and attaching the quartz crystal resonator 101 to the corresponding position. And reflow soldering is performed to make the soldering firm, as shown in FIG. 11; solder paste is applied to the pads 1021 of all the thermistors 102 from the other side of the circuit board 103, and the thermistor 102 is attached to the through holes.
  • 106 reflow soldering is performed to make the soldering firm, and the flux on the circuit board is cleaned, as shown in FIG. 12; the through hole 106 is dispensed to fill the quartz crystal resonator 101, the thermistor 102, and the circuit board 103. The gap between them.
  • the piezoelectric quartz crystal resonator can be used in applications with high frequency and high stability, such as smart phones, smart terminals, global positioning systems (GPS), etc., and can also be used for temperature compensated quartz crystal oscillators or other pairs. In electronic equipment where frequency stability is high.
  • GPS global positioning systems
  • the piezoelectric quartz crystal resonator ensures that the quartz crystal resonator has a separate cavity, and the thermistor can collect the temperature of the quartz crystal resonator and can meet the requirement of higher frequency stability.
  • the manufacturing method described in the present invention can reduce the manufacturing cost and facilitate mass production.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明提供了一种压电石英晶体谐振器及其制作方法，该压电石英晶体谐振器，包括电路板、石英晶体谐振器和热敏电阻，所述热敏电阻用于检测所述石英晶体谐振器的温度，所述热敏电阻和所述石英晶体谐振器布设于所述电路板上，且相互间通过布设在电路板上的线路进行连接；所述热敏电阻和所述石英晶体谐振器采用热塑性材料相互独立的灌封，且二者用于灌封的热塑性材料之间有接触。所述的压电石英晶体谐振器使所述石英晶体谐振器和所述热敏电阻在电路板上布设好后使用热塑性材料相互独立的灌封，使石英晶体谐振器具有独立的腔体，可以避免热敏电阻对石英晶体谐振器的污染，同时满足了更高频率稳定性的需求。

Description

一种压电石英晶体谐振器及其制作方法 技术领域
本发明涉及谐振器，尤其涉及一种压电石英晶体谐振器及其制作方法。
 背景技术
压电石英晶体谐振器，虽然频率温度特性较好，但是为了满足更高要求的频率稳定性，还需要采集压电石英晶体或压电石英晶体环境温度，并对频率温度特性作相应的补偿或修正，从而满足实际使用要求。
目前含热敏电阻的压电石英晶体谐振器，是将热敏电阻和压电石英晶体谐振片封闭在同一个腔体内，或者将热敏电阻和压电石英晶体谐振片分别封装在基板的上下两面。将热敏电阻和压电石英晶体封闭在一个腔体的方法容易对压电石英晶体谐振片构成污染，影响谐振器参数的稳定性。将热敏电阻和压电石英晶体封装在基板的上下两面的方法，虽然分开了腔体，但会使得基座成本增加，同时因为装配过程需要专用设备，会使得生产成本增加。
 技术问题
本发明所要解决的技术问题在于提供一种压电石英晶体谐振器及其制作方法，旨在解决现有技术中热敏电阻和石英晶体谐振器封装在一个腔体内对石英晶体谐振器构成污染的问题。
 技术解决方案
本发明是这样实现的，一种压电石英晶体谐振器，包括电路板、石英晶体谐振器和热敏电阻，所述热敏电阻用于检测所述石英晶体谐振器的温度，所述热敏电阻和所述石英晶体谐振器布设于所述电路板上，且相互间通过布设在电路板上的线路进行连接；所述热敏电阻和所述石英晶体谐振器采用热塑性材料相互独立的灌封，且二者用于灌封的热塑性材料之间有接触。
进一步地，所述热敏电阻和所述石英晶体谐振器并排布设于所述电路板的同一侧上，且所述热敏电阻与所述石英晶体谐振器间预留有间隙。
进一步地，所述热敏电阻布设于所述石英晶体谐振器的背面，且所述热敏电阻的焊盘与所述石英晶体谐振器的焊盘相连接。
进一步地，所述电路板中位于石英晶体谐振器放置的中间位置设置有通孔，所述热敏电阻设置于所述通孔内。
本发明还提供一种压电石英晶体谐振器的制作方法，包括以下步骤：
步骤A、在电路板上设置若干个设计单元，其中每个设计单元包括一个石英晶体谐振器和一个热敏电阻，且相邻的设计单元之间预留分割间隙；
步骤B、在所述每个设计单元中，在电路板的底层设置石英晶体谐振器的引出焊盘，电路板的顶层设置用于焊接石英晶体谐振器的焊盘；同时在石英晶体谐振器焊盘的同侧或异侧设置与热敏电阻相应的焊盘；
步骤C、将石英晶体谐振器和所述热敏电阻分别焊接到相对应的焊盘位置；
步骤D、使用热塑性材料对焊接好的石英晶体谐振器和热敏电阻进行相互独立的灌封，且二者用于灌封的热塑性材料之间有接触；
步骤E、将注塑好的电路板以所述设计单元为单位进行分割。
进一步地，所述热敏电阻设置于所述石英晶体谐振器的同侧时，所述步骤C具体包括以下步骤：
步骤C01、在电路板的焊盘上印刷锡膏，并将所述石英晶体谐振器和所述热敏电阻贴附在相应的位置；
步骤C02、将步骤C01中的电路板进行回流焊，并清洗电路板上的助焊剂。
进一步地，所述热敏电阻设置于所述石英晶体谐振器的异侧时，所述步骤C具体包括以下步骤：
步骤C101、在电路板中位于每个石英晶体谐振器的中间位置设置通孔，同时使热敏电阻的焊盘位于所述通孔的两端；
步骤C102、在电路板中所有的石英晶体谐振器的焊盘上印刷锡膏，将所述石英晶体谐振器贴附在相应的位置，并进行回流焊使其焊接牢固；
步骤C103、在电路板另一侧所有的热敏电阻的焊盘上点上锡膏，将所述热敏电阻贴附在相应的位置，进行回流焊使其焊接牢固，并清洗电路板上的助焊剂；
步骤C104、将所述通孔点胶，使胶填充石英晶体谐振器、热敏电阻和电路板之间的空隙。
进一步地，所述步骤A中若干个设计单元排列成矩阵。
 有益效果
本发明与现有技术相比，有益效果在于：所述的压电石英晶体谐振器使所述石英晶体谐振器和所述热敏电阻在电路板上布设好后使用树脂注塑成形，使石英晶体谐振器具有独立的腔体，可以避免热敏电阻对石英晶体谐振器的污染，同时满足了更高频率稳定性的需求。
 附图说明
图1是本发明压电石英晶体谐振器的第一种制作方法的设计单元电路板示意图；
图2是由图1中的若干个设计单元组成的矩阵示意图；
图3是图2中的电路板焊盘印刷锡膏后的示意图；
图4是在图3中焊接电石英晶体谐振器和热敏电阻的示意图；
图5是将图4注塑后的示意图；
图6是将图5分割成单个石英晶体谐振器的示意图；
图7是图6的分解示意图；
图8是本发明压电石英晶体谐振器的第二种制作方法的设计单元电路板示意图；
图9是由图8中的若干个设计单元组成的矩阵示意图；
图10是图9中的电路板焊盘印刷锡膏后的示意图；
图11是图10中焊接电石英晶体谐振器的示意图；
图12是图11中焊接热敏电阻的示意图；
图13是图12中通孔填充胶后的示意图；
图14是将图13进行分割后的示意图；
图15是图14的分解示意图。
 本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
结合图7和图15所示，一种压电石英晶体谐振器100，包括电路板103、石英晶体谐振器101和热敏电阻102，热敏电阻102用于检测石英晶体谐振器101的温度，热敏电阻102和石英晶体谐振器101布设于电路板103上，且相互间通过布设在电路板103上的线路进行连接，即石英晶体谐振器101的焊盘1011通过布设于电路板103中的线路与热敏电阻102的焊盘1021相连接。热敏电阻102和石英晶体谐振器101采用热塑性材料104相互独立的灌封，且二者用于灌封的热塑性材料之间有接触，即石英晶体谐振器101具有独立的腔体。
结合图1至图7所示为压电石英晶体谐振器100的第一种实施例，热敏电阻102和石英晶体谐振器101并排布设于电路板103的同一侧上，且热敏电阻102与石英晶体谐振器101间预留有间隙。
结合图8至图15所示为压电石英晶体谐振器100的第二种实施例，热敏电阻102布设于石英晶体谐振器101的背面，且热敏电阻102的焊盘1021与石英晶体谐振器101的焊盘1011相连接。电路板103中位于石英晶体谐振器101放置的中间位置处设置有通孔106，热敏电阻102固定设置于通孔106内。
一种压电石英晶体谐振器的制作方法，图1至图7是第一种制作方法中各步骤的示意图，图8至图15是第二种制作方法中各步骤的示意图。这两种制作方法，主要在步骤A和步骤C中存在不同。制作方法包括以下步骤：
步骤A、在电路板103上设置若干个设计单元，其中每个设计单元包括一个石英晶体谐振器101和一个热敏电阻102，且相邻的设计单元之间预留分割间隙，如图1或图8所示。优选的，若干个设计单元可以排列成矩阵，并且在各个设计单元间预留适当的分割间隙，如图2和图9所示。
步骤B、在电路板103的底层设置石英晶体谐振器101的引出焊盘，电路板103的顶层设置用于焊接石英晶体谐振器101的焊盘1011；同时在石英晶体谐振器焊盘1011的同侧或异侧设置与热敏电阻102相应的焊盘1021。
步骤C、将石英晶体谐振器101和热敏电阻102分别焊接到相对应位置的焊盘上。
步骤D、使用热塑性材料104对焊接好的石英晶体谐振器101和热敏电阻102进行相互独立的灌封，且二者用于灌封的热塑性材料之间有接触。
步骤E、将注塑好的电路板以所述设计单元为单位进行分割，使每个分割出来的压电石英晶体谐振器100均包括一个热敏电阻102和一个石英晶体谐振器101。
第一种制作方法是将石英晶体谐振器的焊盘1011与热敏电阻102的焊盘1021设置在同侧相邻的位置。具体为，电路板103的底层设置四个焊盘，这四个焊盘为石英晶体谐振器101的引出焊盘，例如，四个焊盘分别为焊盘A、焊盘B、焊盘C和焊盘D。焊盘A是石英晶体谐振器101的第一电极，焊盘B是接地端，同时接热敏电阻102的第二引出端，焊盘C是石英晶体谐振器101的第二电极，焊盘D是热敏电阻102的第一引出端。电路板103顶层放置与石英晶体谐振器101封装相对应的四个焊盘，用于焊接石英晶体谐振器101。同时在电路板103的ABCD四个焊盘外放置与热敏电阻102封装相对应的两个焊盘，用于焊接热敏电阻102。顶层相应的焊盘通过导体、金属化过孔与底层焊盘连接，如图1所示。
使用第一种制作方法时，步骤C具体包括以下步骤：步骤C01、在电路板103的焊盘上（包括石英晶体谐振器101的焊盘1011和热敏电阻102的焊盘1021）印刷锡膏105，如图3所示，并将石英晶体谐振器101和热敏电阻102贴附在相应的位置。步骤C02、将步骤C01中的电路板进行回流焊，并清洗电路板上的助焊剂，如图4所示。
第二种制作方法是将石英晶体谐振器的焊盘1011与热敏电阻102的焊盘1021设置在异侧。本发明将热敏电阻102设置于石英晶体谐振器101的背面且位于电路板103内，如图8所示。具体为，电路板103的底层设置四个焊盘为石英晶体谐振器101的引出焊盘，例如，所述四个焊盘分别为焊盘A、焊盘B、焊盘C和焊盘D。焊盘A是石英晶体谐振器101的第一电极，焊盘B是接地端，同时接热敏电阻102的第二引出端，焊盘C是石英晶体谐振器101的第二电极，焊盘D是热敏电阻102的第一引出端。电路板103的顶层放置石英晶体谐振器101封装相对应的四个焊盘，用于焊接石英晶体谐振器101。同时在电路板103的ABCD四个焊盘内开一个通孔106，通孔106的两端设计侧面焊盘1021，用于安装和焊接热敏电阻102。顶层相应的焊盘通过导体、金属化过孔与底层焊盘连接，电路板103的厚度略大于热敏电阻102的厚度，如图8所示。
使用第二种制作方法时，步骤C具体包括以下步骤：在电路板103中所有的石英晶体谐振器101的焊盘1011上点上锡膏105，将石英晶体谐振器101贴附在相应的位置，并进行回流焊使其焊接牢固，如图11所示；从电路板103另一侧在所有的热敏电阻102的焊盘1021上点上锡膏，将热敏电阻102贴附在通孔106内，进行回流焊使其焊接牢固，并清洗电路板上的助焊剂，如图12所示；将通孔106点胶，使胶填充石英晶体谐振器101、热敏电阻102和电路板103之间的空隙。
所述的压电石英晶体谐振器可用于对频率需要高、稳定性高的场合，如智能手机、智能终端、全球定位系统（GPS）等，也可以用于温度补偿石英晶体振荡器或其他对频率稳定度要求高的电子设备中。
所述的压电石英晶体谐振器保证了石英晶体谐振器具有独立的腔体，又使得热敏电阻能采集到石英晶体谐振器的温度，且能满足更高频率稳定性的需求。同时采用本发明所述的制作方法能降低制作成本，方便大批量生产。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (8)

  1. 一种压电石英晶体谐振器，包括电路板、石英晶体谐振器和热敏电阻，所述热敏电阻用于检测所述石英晶体谐振器的温度，其特征在于，所述热敏电阻和所述石英晶体谐振器布设于所述电路板上，且相互间通过布设在电路板上的线路进行连接；所述热敏电阻和所述石英晶体谐振器采用热塑性材料相互独立的灌封，且二者用于灌封的热塑性材料之间有接触。
  2. 根据权利要求1所述的压电石英晶体谐振器，其特征在于，所述热敏电阻和所述石英晶体谐振器并排布设于所述电路板的同一侧上，且所述热敏电阻与所述石英晶体谐振器间预留有间隙。
  3. 根据权利要求1所述的压电石英晶体谐振器，其特征在于，所述热敏电阻布设于所述石英晶体谐振器的背面，且所述热敏电阻的焊盘与所述石英晶体谐振器的焊盘相连接。
  4. 根据权利要求3所述的压电石英晶体谐振器，其特征在于，所述电路板中位于石英晶体谐振器放置的中间位置设置有通孔，所述热敏电阻设置于所述通孔内。
  5. 一种压电石英晶体谐振器的制作方法，其特征在于，包括以下步骤：
    步骤A、在电路板上设置若干个设计单元，其中每个设计单元包括一个石英晶体谐振器和一个热敏电阻，且相邻的设计单元之间预留分割间隙；
    步骤B、在所述每个设计单元中，在电路板的底层设置石英晶体谐振器的引出焊盘，电路板的顶层设置用于焊接石英晶体谐振器的焊盘；同时在石英晶体谐振器焊盘的同侧或异侧设置与热敏电阻相应的焊盘；
    步骤C、将石英晶体谐振器和所述热敏电阻分别焊接到相对应的焊盘位置；
    步骤D、使用热塑性材料对焊接好的石英晶体谐振器和热敏电阻进行相互独立的灌封，且二者用于灌封的热塑性材料之间有接触；
    步骤E、将注塑好的电路板以所述设计单元为单位进行分割。
  6. 根据权利要求5所述的压电石英晶体谐振器的制作方法，其特征在于，所述热敏电阻设置于所述石英晶体谐振器的同侧时，所述步骤C具体包括以下步骤：
    步骤C01、在电路板的焊盘上印刷锡膏，并将所述石英晶体谐振器和所述热敏电阻贴附在相应的位置；
    步骤C02、将步骤C01中的电路板进行回流焊，并清洗电路板上的助焊剂。
  7. 根据权利要求5所述的压电石英晶体谐振器的制作方法，其特征在于，所述热敏电阻设置于所述石英晶体谐振器的异侧时，所述步骤C具体包括以下步骤：
    步骤C101、在电路板中位于每个石英晶体谐振器的中间位置设置通孔，同时使热敏电阻的焊盘位于所述通孔的两端；
    步骤C102、在电路板中所有的石英晶体谐振器的焊盘上印刷锡膏，将所述石英晶体谐振器贴附在相应的位置，并进行回流焊使其焊接牢固；
    步骤C103、在电路板另一侧所有的热敏电阻的焊盘上点上锡膏，将所述热敏电阻贴附在相应的位置，进行回流焊使其焊接牢固，并清洗电路板上的助焊剂；
    步骤C104、将所述通孔点胶，使胶填充石英晶体谐振器、热敏电阻和电路板之间的空隙。
  8. 根据权利要求5所述的压电石英晶体谐振器的制作方法，其特征在于，所述步骤A中若干个设计单元排列成矩阵。
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Families Citing this family (5)

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CN105450196B (zh) * 2015-11-30 2018-04-13 应达利电子股份有限公司 一种热敏电阻压电石英晶体谐振器及其制作工艺
CN106411283A (zh) * 2016-10-18 2017-02-15 应达利电子股份有限公司 一种石英晶体振荡器及其制备方法
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CN108565208B (zh) * 2018-04-27 2020-01-24 黄山东晶电子有限公司 一种石英晶体谐振器晶片分离回收方法
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202424646U (zh) * 2011-12-30 2012-09-05 辜达元 一种石英谐振器
CN103152006A (zh) * 2013-03-05 2013-06-12 台晶(宁波)电子有限公司 一种具有热敏电阻的石英晶体谐振器

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3099382B2 (ja) * 1991-02-14 2000-10-16 セイコーエプソン株式会社 小型発振器
JP3567467B2 (ja) * 1993-02-26 2004-09-22 ローム株式会社 圧電発振子の製造方法
JPH0998024A (ja) * 1995-09-28 1997-04-08 Daishinku Co 水晶振動子モジュール
JPH09191226A (ja) * 1995-11-07 1997-07-22 Nec Corp 水晶振動子
JPH11260845A (ja) * 1998-03-16 1999-09-24 Citizen Watch Co Ltd 射出成形金型と圧電振動子及びその製造方法
JP2000252747A (ja) * 1999-03-02 2000-09-14 Nippon Dempa Kogyo Co Ltd 水晶発振器およびその製造方法
JP4052915B2 (ja) * 2002-09-26 2008-02-27 三洋電機株式会社 回路装置の製造方法
KR100477477B1 (ko) * 2002-12-27 2005-03-17 (주)에스팩솔루션 솔더범프 볼이 형성된 기판을 이용한 표면탄성파 필터 패키지 및 그 제조방법
JP4306458B2 (ja) * 2003-03-20 2009-08-05 セイコーエプソン株式会社 電圧制御型発振器、クロック変換器及び電子機器
JP2007036535A (ja) * 2005-07-26 2007-02-08 Seiko Epson Corp 圧電デバイスおよび圧電デバイスの製造方法
JP2007235791A (ja) * 2006-03-03 2007-09-13 Epson Toyocom Corp 圧電デバイス
JP5128262B2 (ja) * 2007-12-17 2013-01-23 セイコーインスツル株式会社 圧電振動片、圧電振動子、発振器、電子機器及び電波時計並びに圧電振動片の製造方法
JP2009213061A (ja) * 2008-03-06 2009-09-17 Epson Toyocom Corp 発振器および電子機器
TW200943501A (en) * 2008-04-09 2009-10-16 Azurewave Technologies Inc Forming integrated circuit module with temperature compensation crystal oscillator
US8375577B2 (en) * 2008-06-04 2013-02-19 National Semiconductor Corporation Method of making foil based semiconductor package
TWI466437B (zh) * 2010-03-29 2014-12-21 Kyocera Kinseki Corp Piezoelectric vibrator
CN101938262B (zh) * 2010-08-03 2012-10-10 广东大普通信技术有限公司 表面贴装式晶体振荡器
CN102065644B (zh) * 2010-12-14 2012-08-15 广东大普通信技术有限公司 印制电路板的制作方法、封装方法以及晶体振荡器
CN102355225B (zh) * 2011-08-02 2014-07-02 台晶(宁波)电子有限公司 石英晶体谐振器用的低温陶瓷整板式平基板基座
JP2013102315A (ja) * 2011-11-08 2013-05-23 Seiko Epson Corp 圧電デバイス、及び電子機器
JP6017901B2 (ja) * 2012-09-14 2016-11-02 ラピスセミコンダクタ株式会社 半導体装置および計測装置
US9548717B2 (en) * 2012-11-16 2017-01-17 Daishinku Corporation Piezoelectric resonator device using temperature sensor unit
JP2014107372A (ja) * 2012-11-27 2014-06-09 Taiyo Yuden Co Ltd 回路モジュール及びその製造方法
CN203151440U (zh) * 2013-03-05 2013-08-21 台晶(宁波)电子有限公司 一种具有热敏电阻的石英晶体谐振器
JP2014187441A (ja) * 2013-03-22 2014-10-02 Nippon Dempa Kogyo Co Ltd 恒温槽付水晶発振器
TWM458034U (zh) * 2013-03-27 2013-07-21 Harmony Electronics Corp 具熱敏電阻元件之石英振盪器封裝結構
CN204131474U (zh) * 2014-10-22 2015-01-28 应达利电子(深圳)有限公司 一种压电石英晶体谐振器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202424646U (zh) * 2011-12-30 2012-09-05 辜达元 一种石英谐振器
CN103152006A (zh) * 2013-03-05 2013-06-12 台晶(宁波)电子有限公司 一种具有热敏电阻的石英晶体谐振器

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US20200295726A1 (en) 2020-09-17
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