WO2016052291A1 - 静電チャック装置 - Google Patents

静電チャック装置 Download PDF

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Publication number
WO2016052291A1
WO2016052291A1 PCT/JP2015/076890 JP2015076890W WO2016052291A1 WO 2016052291 A1 WO2016052291 A1 WO 2016052291A1 JP 2015076890 W JP2015076890 W JP 2015076890W WO 2016052291 A1 WO2016052291 A1 WO 2016052291A1
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WO
WIPO (PCT)
Prior art keywords
focus ring
electrostatic chuck
bank
chuck device
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/076890
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
仁 河野
高橋　健太郎
文洋 牛坊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Osaka Cement Co Ltd
Original Assignee
Sumitomo Osaka Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Osaka Cement Co Ltd filed Critical Sumitomo Osaka Cement Co Ltd
Priority to CN201580051119.4A priority Critical patent/CN106716619B/zh
Priority to JP2015553946A priority patent/JP6149945B2/ja
Priority to KR1020177003865A priority patent/KR102233920B1/ko
Priority to US15/510,224 priority patent/US10262886B2/en
Publication of WO2016052291A1 publication Critical patent/WO2016052291A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures

Definitions

  • the present invention relates to an electrostatic chuck device, and more specifically, an electrostatic chuck device suitably used for a vacuum process apparatus such as an etching apparatus, a sputtering apparatus, or a CVD apparatus applied to a manufacturing process of a semiconductor device, a liquid crystal display device or the like.
  • a vacuum process apparatus such as an etching apparatus, a sputtering apparatus, or a CVD apparatus applied to a manufacturing process of a semiconductor device, a liquid crystal display device or the like.
  • the etching technique is one of important microfabrication techniques.
  • the plasma etching technique has become the mainstream among etching techniques because of high efficiency and fine processing of a large area.
  • Plasma etching technology is one type of dry etching technology.
  • the plasma etching technique is a technique for forming a fine pattern in a solid material as follows. A mask pattern is formed with a resist on a solid material to be processed. Next, a reactive gas is introduced into the vacuum while the solid material is supported in a vacuum, and a high-frequency electric field is applied to the reactive gas. Then, the accelerated electrons collide with gas molecules to form a plasma state, and radicals (free radicals) and ions generated from the plasma react with the solid material to become reaction products. Then, by removing this reaction product, a fine pattern is formed on the solid material.
  • a plasma CVD method is a film forming method in which a high frequency electric field is applied to a gas containing raw material molecules to generate a plasma discharge, the raw material molecules are decomposed by electrons accelerated by the plasma discharge, and the obtained compound is deposited. is there. Reactions that did not occur only at thermal excitation at low temperatures are possible in the plasma because the gases in the system collide with each other and are activated to become radicals.
  • a wafer in a semiconductor manufacturing apparatus using plasma such as a plasma etching apparatus or a plasma CVD apparatus, a wafer can be easily mounted and fixed on a sample stage, and the wafer can be maintained at a desired temperature.
  • An electric chuck device is used.
  • the electrostatic chuck device includes a ring member (focus ring) disposed on the outer peripheral edge of the wafer attracting portion so as to surround the wafer loading surface.
  • a technique that improves the uniformity of the temperature of the outer peripheral portion of the wafer by providing a second electrostatic chuck means for attracting the focus ring to the outer peripheral portion of the wafer (for example, , See Patent Document 1).
  • the second electrostatic suction means by providing the second electrostatic suction means, the focus ring is attracted to the electrostatic chuck portion with a force larger than the force for attracting the wafer, and the cooling medium (cooling gas) is focused on the focus ring.
  • the temperature of the focus ring is adjusted by spraying on the back surface of the wafer to make the surface temperature of the wafer uniform.
  • a gas supply unit is provided for each of the wafer adsorption unit and the focus ring adsorbed by the electrostatic chuck unit, and by controlling the temperature of the wafer adsorption unit and the focus ring independently, the surface temperature of the wafer can be controlled.
  • a technique for improving uniformity is known (see, for example, Patent Document 2).
  • a protrusion is formed on the contact surface of the electrostatic chuck portion with the focus ring, or the surface roughness of the contact surface is roughened along the circumferential direction of the electrostatic chuck portion.
  • the heat transfer area by the cooling gas is increased, and the cooling gas is circulated between the electrostatic chuck portion and the focus ring.
  • the groove portion is formed in a portion of the electrostatic chuck portion that contacts the focus ring, thereby improving the diffusibility of the cooling gas with respect to the focus ring.
  • the present invention has been made in view of the above circumstances, and provides an electrostatic chuck device that can increase the force for electrostatically attracting the focus ring and can cool the focus ring uniformly. For the purpose.
  • the present inventors have provided a pair of holding portions that electrostatically attract the focus ring along the circumferential direction of the focus ring and on which the focus ring is placed. And a ring-shaped groove formed between these ridges, and a convex portion is provided on the bottom surface of the groove, or at least one of the pair of ridges is located on the outer peripheral side of the focus ring.
  • a microprojection part including a plurality of microprojections is formed on the surface facing the focus ring, and the cooling means supplies heat transfer gas to the groove part, and cooperates with the convex part not in contact with the focus ring.
  • the pair of bank portions are in contact with the focus ring, or a plurality of minute protrusions are in contact with the focus ring so that the focus ring is electrostatically attracted. It is possible to increase the force to wear, and found that it is possible to uniformly cool the focus ring, thereby completing the present invention.
  • the electrostatic chuck device of the present invention includes a mounting table provided with a mounting surface on which a plate-like sample is mounted, an annular focus ring that is disposed on the mounting table and surrounds the periphery of the mounting surface, And a cooling means for cooling the focus ring.
  • the mounting table is provided around the mounting surface along a circumferential direction of the focus ring, and holds the focus ring electrostatically.
  • the holding portion is provided along the circumferential direction, and a pair of bank portions on which the focus ring is placed, and an annular groove portion formed between the pair of bank portions,
  • the cooling means supplies heat transfer gas to the groove portion, and a convex portion is provided on a bottom surface of the groove portion, the pair of bank portions are in contact with the focus ring, and the convex portion is the focus ring. Without contacting the pair of dykes Wherein a protrusion is characterized by electrostatically adsorbing the focus ring cooperate.
  • the electrostatic chuck device of the present invention also includes a mounting table provided with a mounting surface on which a plate-like sample is mounted, an annular focus ring disposed on the mounting table and surrounding the mounting surface.
  • a cooling means for cooling the mounting table and the focus ring wherein the mounting table is provided around the mounting surface along a circumferential direction of the focus ring and electrostatically attracts the focus ring.
  • a holding portion the holding portion is provided along the circumferential direction, a pair of bank portions on which the focus ring is placed, and an annular groove portion formed between the pair of bank portions,
  • a micro-projection part including a plurality of micro-projections is formed on a surface facing the focus ring,
  • the cooling means is Wherein the heat transfer gas is supplied to the groove, the plurality of minute projections is in contact with the focus ring, characterized by electrostatically adsorbing the focus ring.
  • an electrostatic chuck device that can increase the force for electrostatically attracting the focus ring and can cool the focus ring uniformly.
  • FIG. 1 is a schematic sectional view showing an embodiment of the electrostatic chuck device of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of the electrostatic chuck device of the present invention, and is a partially enlarged view in which a region indicated by ⁇ in FIG. 1 is enlarged.
  • the electrostatic chuck device 10 of the present embodiment includes a mounting table 11 provided with a mounting surface (a mounting surface (upper surface) 24a of a dielectric layer 24 described later) on which the plate-like sample W is mounted,
  • the ring-shaped focus ring 12 that is arranged on the top and surrounds the periphery of the mounting surface (mounting surface 24a), and the cooling means 13 that cools the mounting table 11 and the focus ring 12 are roughly configured.
  • the mounting table 11 is provided on the mounting table main body 11A, the mounting table main body 11A, a disk-shaped electrostatic chuck portion 14 having a mounting surface (mounting surface 24a), and a mounting surface (mounting surface 24a).
  • a holding portion 15 that is provided along the circumferential direction of the focus ring 12 and electrostatically attracts the focus ring 12.
  • the holding portion 15 is provided along the circumferential direction of the focus ring 12, and an annular shape formed between the pair of bank portions 16 (16 ⁇ / b> A, 16 ⁇ / b> B) on which the focus ring 12 is placed and the pair of bank portions 16.
  • a groove portion 17 On the bottom surface 17 a of the groove portion 17, a convex portion 18 that protrudes (in the thickness direction of the holding portion 15) is provided on the surface side of the bank portion 16 on which the focus ring 12 is placed.
  • micro projections 16 c including a plurality of micro projections 16 b, 16 b... May be formed on the surface 16 a facing the focus ring 12.
  • the pair of bank portions 16 (16 ⁇ / b> A, 16 ⁇ / b> B) or the pair of bank portions (16 ⁇ / b> A, 16 ⁇ / b> B) faces 16 a facing the focus ring 12. ..
  • the convex portion 18 is not in contact with the focus ring 12.
  • the size of the space (gap) between the lower surface 12a of the focus ring 12 and the surface 16a facing the focus ring 12 in the bank portion 16, that is, the surface 16a facing the focus ring 12 in the bank portion 16 is used as a reference.
  • the height of the microprotrusions 16b, 16b... Is not particularly limited, but is such that the heat transfer gas supplied into the groove portion 17 by the cooling means 13 can flow.
  • the distance between is not particularly limited, the distance between the focus ring 12 and the projection 18 is such that an electrostatic attraction force acts.
  • the amount of heat transfer gas flowing out from the bank portion 16A located on the outer peripheral side of the focus ring 12 is larger than the amount of heat transfer gas flowing out from the other bank portion 16B.
  • the heat transfer gas supplied into the groove portion 17 by the cooling means 13 flows out to the outside more from the side of the bank portion 16A where the fine protrusions 16b, 16b,. To do. Thereby, the focus ring 12 can be cooled uniformly.
  • the distance between the microprotrusions 16b, 16b, ... is not particularly limited, but more heat transfer gas flows out of the bank portion 16A than the bank portion 16B. To the extent that can be.
  • the heights of the plurality of minute protrusions 16b, 16b,... Provided on the bank portion 16A on the outer peripheral side of the focus ring 12 are the same as the heights of the plurality of minute protrusions provided on the bank portion 16B on the inner periphery side of the focus ring 12. It is higher than 16b, 16b.
  • the heat transfer gas supplied in the groove part 17 by the cooling means 13 flows out more outside from the bank part 16A side where the height of microprotrusion 16b, 16b ... is high. .
  • the focus ring 12 can be cooled uniformly.
  • the height of the micro protrusions 16b, 16b,... Is not particularly limited, but the heat transfer gas may flow more out from the bank portion 16A than the bank portion 16B. To the extent possible.
  • the convex part 18 is comprised from several columnar protrusion 18A, 18B, ..., for example.
  • the protrusions 18A, 18B,... are spaced apart from each other.
  • the protrusions 18A, 18B,... are provided over the entire area of the groove portion 17 when the electrostatic chuck device 10 (holding portion 15) is viewed in plan.
  • interval of protrusion 18A, 18B, ... is not specifically limited.
  • the convex part 18 may be comprised from several ridge part 18A, 18B, ..., for example.
  • the ridges 18A, 18B,... are provided apart from each other.
  • the area of the convex portion 18 (the area combining all the projections 18A, 18B,...) Is the electrostatic chuck device 10 (holding portion).
  • the area of the convex portion 18 (the area combining all the projections 18A, 18B,...) is the electrostatic chuck device 10 (holding portion).
  • 15) is viewed in plan, it is preferably 10% or more and 80% or less, more preferably 20% or more and 50% or less of the area of the groove part 17 (the area of the bottom surface 17a of the groove part 17). If the area of the convex part 18 is less than 10% of the area of the groove part 17, the electrostatic attraction force acting between the protrusions 18A, 18B,... And the focus ring 12, that is, the protrusions 18A, 18B,.
  • the focus ring 12 Since the force for attracting the focus ring 12 is too weak, the focus ring 12 cannot be fixed to the holding portion 15.
  • the area of the convex portion 18 exceeds 80% of the area of the groove portion 17, the space between the lower surface 12a of the focus ring 12 and the apex (upper surface) 18a of the convex portion 18 becomes too small.
  • the amount of heat transfer gas flowing through the is reduced.
  • the effect of cooling the focus ring 12 by the heat transfer gas is reduced, and a difference occurs between the surface temperature of the focus ring 12 and the surface temperature of the plate-like sample W.
  • the surface of the plate-like sample W The internal temperature also becomes unstable.
  • the area of the convex portion 18 (area combining the convex strip portions 18A, 18B,...) Is an electrostatic chuck device. 10 (holding part 15) in plan view is preferably 10% or more and 80% or less, and more preferably 20% or more and 50% or less of the area of the groove part 17 (the area of the bottom surface 17a of the groove part 17). More preferred. If the area of the convex part 18 is less than 10% of the area of the groove part 17, the electrostatic attraction force acting between the convex part 18A, 18B,... And the focus ring 12, that is, the protrusions 18A, 18B,.
  • the focus ring 12 Since the force for attracting the focus ring 12 is too weak, the focus ring 12 cannot be fixed to the holding portion 15.
  • the area of the convex portion 18 exceeds 80% of the area of the groove portion 17, the space between the lower surface 12a of the focus ring 12 and the apex (upper surface) 18a of the convex portion 18 becomes too small.
  • the amount of heat transfer gas flowing through the is reduced.
  • the effect of cooling the focus ring 12 by the heat transfer gas is reduced, and a difference occurs between the surface temperature of the focus ring 12 and the surface temperature of the plate-like sample W.
  • the surface of the plate-like sample W The internal temperature also becomes unstable.
  • the separation distance between the lower surface 12a of the focus ring 12 and the apex (upper surface) 18a of the convex portion 18 is preferably 1 ⁇ m or more and 10 ⁇ m or less, and more preferably 2 ⁇ m or more and 5 ⁇ m or less.
  • the separation distance between the lower surface 12a of the focus ring 12 and the apex (upper surface) 18a of the convex portion 18 is less than 1 ⁇ m, the space between the lower surface 12a of the focus ring 12 and the apex (upper surface) 18a of the convex portion 18 is small. Therefore, the amount of heat transfer gas flowing through the space is reduced.
  • the effect of cooling the focus ring 12 by the heat transfer gas is reduced, and a difference occurs between the surface temperature of the focus ring 12 and the surface temperature of the plate-like sample W.
  • the surface of the plate-like sample W The internal temperature also becomes unstable.
  • the separation distance between the lower surface 12a of the focus ring 12 and the apex (upper surface) 18a of the convex portion 18 exceeds 10 ⁇ m, the electrostatic force acting between the convex strip portions 18A, 18B,. Since the attracting force, that is, the force that attracts the focus ring 12 to the protrusions 18A, 18B,... Is too weak, the focus ring 12 cannot be fixed to the holding portion 15.
  • the depth of the groove portion 17 is such that the flow of heat transfer gas for cooling the focus ring 12 in the groove portion 17 is not hindered, and is preferably 10 ⁇ m to 50 ⁇ m.
  • the cooling means 13 includes a heat transfer gas supply unit 19.
  • the heat transfer gas supply unit 19 supplies the heat transfer gas to the groove portion 17 at a predetermined pressure via the gas flow path 20 communicating from the bottom surface 17a side.
  • the gas flow path 20 penetrates the mounting table 11 in the thickness direction and communicates with a number of gas holes 21 provided in the bottom surface 17 a of the groove portion 17.
  • the gas hole 21 is formed on substantially the entire bottom surface 17 a of the groove portion 17.
  • a heat transfer gas supply source 22 for supplying heat transfer gas is connected to the gas flow path 20 via a pressure control valve 23.
  • the pressure control valve 23 adjusts the flow rate so that the pressure of the heat transfer gas becomes a predetermined pressure.
  • the number of the gas flow paths 20 that supply the heat transfer gas from the heat transfer gas supply source 22 may be one or more.
  • the electrostatic chuck portion 14 of the mounting table 11 includes a circular dielectric layer 24 whose upper surface (one main surface) is a mounting surface (upper surface) 24a for mounting a plate-like sample W such as a semiconductor wafer,
  • the dielectric layer 24 is disposed opposite to the lower surface (another main surface), and is sandwiched between the dielectric layer 24 and the insulating layer 25 having the same diameter as the dielectric layer 24.
  • a circular electrostatic internal electrode 26 having a smaller diameter than the layer 24 and the insulating layer 25; a power supply terminal 27 that is connected to the central portion of the lower surface of the electrostatic internal electrode 26 and applies a DC voltage; It is schematically constituted by a cylindrical insulator 28 which covers the periphery of the service terminal 27 and is insulated from the outside.
  • the holding unit 15 of the mounting table 11 is arranged in an annular dielectric layer 24 formed as a bank portion 16, a groove portion 17, and a convex portion 18, and opposed to the lower surface side of the dielectric layer 24.
  • the insulating layer 25 and the dielectric layer 24 and the insulating layer 25 are sandwiched between the dielectric layer 24 and the ring-shaped electrostatic attraction internal electrode 26 having a smaller diameter than the insulating layer 25.
  • Each layer constituting the electrostatic chuck portion 14 and each layer constituting the holding portion 15 are connected. That is, the internal electrode 26 for electrostatic attraction constituting the holding portion 15 is also electrically connected to the power supply terminal 27.
  • the material for forming the dielectric layer 24 and the insulating layer 25 is preferably a heat-resistant ceramic.
  • the ceramic include aluminum nitride (AlN), aluminum oxide (alumina, Al 2 O 3 ), and silicon nitride (Si 3 N 4). ), Zirconium oxide (ZrO 2 ), yttrium oxide (Y 2 O 3 ), sialon, boron nitride (BN) and silicon carbide (SiC), or a composite ceramic containing two or more types Is preferred.
  • the dielectric layer 24 is made of a material having a high dielectric constant that does not become an impurity with respect to the plate-like sample W to be electrostatically attracted because the mounting surface (upper surface) 24a side is an electrostatic attracting surface.
  • a silicon carbide-aluminum oxide composite material sintered body
  • silicon carbide-aluminum oxide composite material containing 4% by weight or more and 20% by weight or less of silicon carbide with the balance being aluminum oxide (alumina) is preferable.
  • the material for forming the dielectric layer 24 has an average crystal grain size.
  • the bank portion 16, the groove portion 17, and the convex portion 18 can be formed in a predetermined size.
  • the electrostatic adsorption internal electrode 26 is made of plate-like ceramics having a thickness of about 10 ⁇ m to 50 ⁇ m.
  • the volume specific resistance value of the internal electrode 26 for electrostatic adsorption at the operating temperature of the electrostatic chuck device 10 is preferably 1.0 ⁇ 10 6 ⁇ ⁇ cm or less, more preferably 1.0 ⁇ 10 4 ⁇ ⁇ cm. cm or less.
  • Examples of the conductive ceramics constituting the internal electrode 26 for electrostatic adsorption include silicon carbide (SiC) -aluminum oxide (Al 2 O 3 ) composite sintered body, tantalum nitride (TaN) -aluminum oxide (Al 2 O 3 ).
  • Examples include composite sintered bodies, tantalum carbide (TaC) -aluminum oxide (Al 2 O 3 ) composite sintered bodies, molybdenum carbide (Mo 2 C) -aluminum oxide (Al 2 O 3 ) composite sintered bodies, and the like.
  • the focus ring 12 is made of an annular plate material whose inner diameter is slightly larger than the diameter of the electrostatic chuck portion 14.
  • the focus ring 12 is electrostatically attracted to the bank portion 16 of the holding unit 15.
  • the focus ring 12 is controlled so as to have the same temperature as the plate-like sample W in a processing step such as plasma etching, and the material thereof is, for example, polycrystalline silicon, carbonized when used for oxide film etching. Silicon or the like is preferably used.
  • the mounting table main body 11A is provided below the electrostatic chuck unit 14, the holding unit 15 and the focus ring 12, and controls the temperature of the electrostatic chuck unit 144, the holding unit 15 and the focus ring 12 to a desired temperature.
  • a high-frequency generating electrode is also provided, and a flow path 29 for circulating a cooling medium such as water or an organic solvent is formed therein, and is placed on the upper surface 24 a of the dielectric layer 24. The temperature of the plate-like sample W can be maintained at a desired temperature.
  • Examples of the material for forming the mounting table main body 11A include a metal having good thermal conductivity such as aluminum, and a composite material made of aluminum oxide (alumina, Al 2 O 3 ) and silicon carbide (SiC).
  • the temperature of the focus ring 12 is controlled to the same temperature as the plate-like sample W by heating the temperature of the focus ring 12 to a predetermined temperature at an arbitrary rate of temperature increase.
  • a heater (not shown) may be provided.
  • a thermometer for measuring these temperatures may be connected to the heater and the focus ring 12.
  • a temperature controller and a heater power source may be connected to the thermometer.
  • the holding unit 15 that electrostatically attracts the focus ring 12 is provided along the circumferential direction of the focus ring 12, and the focus ring 12 is placed thereon.
  • a pair of bank portions 16 and an annular groove portion 17 formed between the bank portions 16, the cooling means 13 supplies heat transfer gas to the groove portion 17, and the bottom surface 17 a of the groove portion 17 is The convex portion 18 is provided, the pair of bank portions 16 is in contact with the focus ring 12, and the convex portion 18 is not in contact with the focus ring 12.
  • a surface 16a facing the focus ring 12 is formed with a microprojection portion 16c including a plurality of microprojections 16b, 16b.
  • the microprojection 16b, 16b ⁇ ⁇ ⁇ is in contact with the lower surface 12a of the focus ring 12. Therefore, the force (electrostatic adsorption force) for electrostatically attracting the focus ring 12 to the holding portion 15 can be increased.
  • the focus ring is heated by the heat transfer gas supplied into the groove portion 17 by the cooling means 13. 12 can be sufficiently cooled.
  • the convex portion 18 does not contact the focus ring 12 and electrostatically attracts the focus ring 12, or the lower surface 12a of the focus ring 12 and the surface 16a facing the focus ring 12 in the bank portion 16 do not contact each other. Only the minute protrusions 16b, 16b,... Of the bank portion 16 are in contact with the lower surface 12a of the focus ring 12, and the bank portion 16 electrostatically attracts the focus ring 12, so that the focus ring 12 is electrostatically attracted.
  • the temperature of the focus ring 12 can be adjusted, and the temperature of the focus ring 12 during processing can be kept constant. Therefore, the temperature of the outer peripheral portion of the plate-like sample W such as a silicon wafer can be stabilized, and thus the etching characteristics in the plane of the plate-like sample W can be made uniform.
  • the surface temperature of the focus ring 12 can be adjusted with high accuracy, the temperature difference between the surface temperature of the focus ring 12 and the surface temperature of the plate-like sample W placed on the electrostatic chuck portion 14 is determined. Therefore, it is possible to prevent deposits from being deposited on the focus ring 12.
  • the pair of bank portions 16 includes the minute projections 16c including the plurality of minute projections 16b, 16b,... On the surface 16a facing the focus ring 12 is illustrated.
  • the present invention is not limited to this.
  • a micro projection including a plurality of micro projections is formed on the surface facing the focus ring. The amount of heat transfer gas flowing out from the bank located on the outer peripheral side of the focus ring is larger than the amount of heat transfer gas flowing out from the bank located on the inner peripheral side of the focus ring.
  • the convex part 18 was provided in the bottom face 17a of the cyclic
  • Electrostatic chuck apparatus 11 ... Mounting base, 11A ... Mounting base main body, 12 ... Focus ring, 13 ... Cooling means, 14 ... Electrostatic chuck part, 15 ... -Holding part, 16 ... bank part, 16b ... minute projection, 16c ... minute projection part, 17 ... groove part, 18 ... convex part, 19 ... heat transfer gas supply part, 20 ... Gas flow path, 21 ... Gas hole, 22 ... Heat transfer gas supply source, 23 ... Pressure control valve, 24 ... Dielectric layer, 24a ... Mounting surface, 25 ... Insulating layer, 26... Electrostatic adsorption internal electrode, 27... Power feeding terminal, 28.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2015/076890 2014-09-30 2015-09-24 静電チャック装置 Ceased WO2016052291A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201580051119.4A CN106716619B (zh) 2014-09-30 2015-09-24 静电吸盘装置
JP2015553946A JP6149945B2 (ja) 2014-09-30 2015-09-24 静電チャック装置
KR1020177003865A KR102233920B1 (ko) 2014-09-30 2015-09-24 정전 척 장치
US15/510,224 US10262886B2 (en) 2014-09-30 2015-09-24 Electrostatic chuck device

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JP2014201302 2014-09-30
JP2014-201303 2014-09-30
JP2014-201302 2014-09-30
JP2014201303 2014-09-30

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JP2019151879A (ja) * 2018-03-01 2019-09-12 株式会社アルバック 成膜装置
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JP2022524088A (ja) * 2019-03-08 2022-04-27 アプライド マテリアルズ インコーポレイテッド プラズマ処理チャンバにおける高周波（ｒｆ）電力印加のための静電チャック
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JP2021166270A (ja) * 2020-04-08 2021-10-14 東京エレクトロン株式会社 エッジリング、載置台及び基板処理装置
JP7537842B2 (ja) * 2020-10-06 2024-08-21 東京エレクトロン株式会社 基板支持体、基板処理装置および基板処理方法
CN115621109A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 等离子体处理装置
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
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JP7780062B1 (ja) 2024-11-06 2025-12-03 日本碍子株式会社 ウエハ載置台

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US10262886B2 (en) 2019-04-16
CN106716619A (zh) 2017-05-24
US20170287764A1 (en) 2017-10-05
CN106716619B (zh) 2020-09-15
KR20170062440A (ko) 2017-06-07
JP2017130687A (ja) 2017-07-27
KR102233920B1 (ko) 2021-03-30
JP6149945B2 (ja) 2017-06-21
JP6489146B2 (ja) 2019-03-27
JPWO2016052291A1 (ja) 2017-04-27

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