JP5395633B2 - 基板処理装置の基板載置台 - Google Patents
基板処理装置の基板載置台 Download PDFInfo
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- JP5395633B2 JP5395633B2 JP2009261867A JP2009261867A JP5395633B2 JP 5395633 B2 JP5395633 B2 JP 5395633B2 JP 2009261867 A JP2009261867 A JP 2009261867A JP 2009261867 A JP2009261867 A JP 2009261867A JP 5395633 B2 JP5395633 B2 JP 5395633B2
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- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Description
12、52、62 基板載置台(サセプタ)
22 静電電極板
23 静電チャック(ESC)
23a 下部円板部
23b 上部円板部
25、55 フォーカスリング
41、61 金属ベース(基部)
41a 凹部
41b 上部平面
42 接着剤層
Claims (7)
- 基部と、該基部の上部平面に接着剤層よって接着され、円形の吸着面によって基板を支持する円板状の静電チャックと、該静電チャックの周囲に配置され、前記基板を囲むと共に、前記基部の前記上部平面の外周部を覆う円環状のフォーカスリングとを有し、前記静電チャックは上部円板部と該上部円板部よりも径が大きい下部円板部とを有する2段構造を呈しており、
前記基部は、前記静電チャックの前記下部円板部が嵌合する凹部を有し、
前記凹部に嵌合する前記下部円板部の側面と前記凹部の内部壁面との間における隙間、及び前記下部円板部と前記基部とを接着する前記接着剤層の外周部は、前記基板側から前記静電チャックを眺めたときに、前記フォーカスリングで隠されていることを特徴とする基板処理装置の基板載置台。 - 前記フォーカスリングは、前記基部の前記凹部を囲む上部平面に載置されており、前記フォーカスリングの下部平面と前記静電チャックの前記下部円板部の上部平面は当接することなく、前記フォーカスリングの下部平面と前記静電チャックの前記下部円板部の上部平面との隙間(D)は、0mmよりも大きく0.4mm以下であることを特徴とする請求項1記載の基板処理装置の基板載置台。
- 前記フォーカスリングは、前記静電チャックの前記下部円板部に載置されており、前記フォーカスリングの下部平面と前記基部の前記凹部を囲む上部平面は当接することなく、前記フォーカスリングの下部平面と前記基部の前記凹部を囲む上部平面との隙間(E)は、0mmよりも大きく0.4mm以下であることを特徴とする請求項1記載の基板処理装置の基板載置台。
- 前記フォーカスリングは、前記静電チャックの前記下部円板部の外周部及び前記接着剤層の外周部が遊嵌する切欠部を有し、前記下部円板部の外周部及び前記接着剤層の外周部と前記切欠部の内壁面との隙間は、前記基板側から前記静電チャックを眺めたときに、前記フォーカスリングで隠されていることを特徴とする請求項1記載の基板処理装置の基板載置台。
- 前記基板は円形の板状体であり、該基板と前記フォーカスリングは、鉛直方向において一部が重なっており、前記基板の半径方向に沿った一の重なり部分における重なり幅(A)は、0.5〜1.5mmであることを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置の基板載置台。
- 前記重なり部分における前記基板の下部平面と前記フォーカスリングの上部平面との隙間(B)は、0.4mm以下であることを特徴とする請求項5記載の基板処理装置の基板載置台。
- 前記静電チャックの前記上部円板部の外周面と前記フォーカスリングの内周面との隙間(C)は、0.05〜0.4mmであることを特徴とする請求項1乃至6のいずれか1項に記載の基板処理装置の基板載置台。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009261867A JP5395633B2 (ja) | 2009-11-17 | 2009-11-17 | 基板処理装置の基板載置台 |
US12/947,214 US8687343B2 (en) | 2009-11-17 | 2010-11-16 | Substrate mounting table of substrate processing apparatus |
KR1020100114054A KR101826987B1 (ko) | 2009-11-17 | 2010-11-16 | 기판 처리 장치의 기판 탑재대 |
TW099139369A TWI512882B (zh) | 2009-11-17 | 2010-11-16 | And a substrate stage of the substrate processing apparatus |
CN2010105825587A CN102110632A (zh) | 2009-11-17 | 2010-11-17 | 基板处理装置的基板载置台 |
CN201510896410.3A CN105355585B (zh) | 2009-11-17 | 2010-11-17 | 基板处理装置的基板载置台 |
EP10191516.3A EP2325877B1 (en) | 2009-11-17 | 2010-11-17 | Substrate mounting table of substrate processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009261867A JP5395633B2 (ja) | 2009-11-17 | 2009-11-17 | 基板処理装置の基板載置台 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011108816A JP2011108816A (ja) | 2011-06-02 |
JP5395633B2 true JP5395633B2 (ja) | 2014-01-22 |
Family
ID=43431245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009261867A Active JP5395633B2 (ja) | 2009-11-17 | 2009-11-17 | 基板処理装置の基板載置台 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8687343B2 (ja) |
EP (1) | EP2325877B1 (ja) |
JP (1) | JP5395633B2 (ja) |
KR (1) | KR101826987B1 (ja) |
CN (2) | CN102110632A (ja) |
TW (1) | TWI512882B (ja) |
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KR101141488B1 (ko) * | 2003-03-21 | 2012-05-03 | 도쿄엘렉트론가부시키가이샤 | 처리중의 기판이면(裏面) 증착 감소방법 및 장치 |
US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
WO2012056807A1 (ja) | 2010-10-25 | 2012-05-03 | 日本碍子株式会社 | セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材 |
JP2013033940A (ja) * | 2011-07-07 | 2013-02-14 | Tokyo Electron Ltd | プラズマ処理装置 |
US9682398B2 (en) * | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
CN102810518A (zh) * | 2012-07-13 | 2012-12-05 | 日月光半导体制造股份有限公司 | 晶圆承载板结构及晶圆接合方法 |
JP2014096553A (ja) | 2012-10-09 | 2014-05-22 | Tokyo Electron Ltd | プラズマ処理方法、及びプラズマ処理装置 |
WO2014057793A1 (ja) * | 2012-10-09 | 2014-04-17 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6400273B2 (ja) * | 2013-03-11 | 2018-10-03 | 新光電気工業株式会社 | 静電チャック装置 |
JP5621142B2 (ja) * | 2013-04-02 | 2014-11-05 | 独立行政法人産業技術総合研究所 | 半導体プロセス用キャリア |
WO2016052291A1 (ja) * | 2014-09-30 | 2016-04-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
US10648079B2 (en) * | 2014-12-19 | 2020-05-12 | Lam Research Corporation | Reducing backside deposition at wafer edge |
JP6558901B2 (ja) * | 2015-01-06 | 2019-08-14 | 東京エレクトロン株式会社 | プラズマ処理方法 |
KR101950897B1 (ko) | 2015-09-25 | 2019-02-21 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
CN105575872B (zh) * | 2016-02-26 | 2019-05-03 | 上海华力微电子有限公司 | 改善静电吸附盘树脂保护环损伤的结构及方法 |
JP6635888B2 (ja) * | 2016-07-14 | 2020-01-29 | 東京エレクトロン株式会社 | プラズマ処理システム |
JP2018107264A (ja) | 2016-12-26 | 2018-07-05 | 東京エレクトロン株式会社 | 消耗判定方法及びプラズマ処理装置 |
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JP7018331B2 (ja) * | 2018-02-23 | 2022-02-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP7101055B2 (ja) * | 2018-06-12 | 2022-07-14 | 東京エレクトロン株式会社 | 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法 |
JP7228989B2 (ja) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | 載置台、エッジリングの位置決め方法及び基板処理装置 |
JP6719629B2 (ja) * | 2019-07-31 | 2020-07-08 | 東京エレクトロン株式会社 | プラズマ処理システム及び搬送方法 |
JP2023027640A (ja) * | 2021-08-17 | 2023-03-02 | 日本碍子株式会社 | ウエハ載置台 |
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JP4547182B2 (ja) | 2003-04-24 | 2010-09-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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JP5331580B2 (ja) * | 2008-07-02 | 2013-10-30 | 日本碍子株式会社 | ウエハ載置装置及びそれに用いる部品 |
-
2009
- 2009-11-17 JP JP2009261867A patent/JP5395633B2/ja active Active
-
2010
- 2010-11-16 TW TW099139369A patent/TWI512882B/zh active
- 2010-11-16 US US12/947,214 patent/US8687343B2/en active Active
- 2010-11-16 KR KR1020100114054A patent/KR101826987B1/ko active IP Right Grant
- 2010-11-17 EP EP10191516.3A patent/EP2325877B1/en active Active
- 2010-11-17 CN CN2010105825587A patent/CN102110632A/zh active Pending
- 2010-11-17 CN CN201510896410.3A patent/CN105355585B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20110055424A (ko) | 2011-05-25 |
KR101826987B1 (ko) | 2018-02-07 |
JP2011108816A (ja) | 2011-06-02 |
US20110116207A1 (en) | 2011-05-19 |
EP2325877A2 (en) | 2011-05-25 |
US8687343B2 (en) | 2014-04-01 |
EP2325877A3 (en) | 2013-12-18 |
CN105355585B (zh) | 2020-05-19 |
CN102110632A (zh) | 2011-06-29 |
TWI512882B (zh) | 2015-12-11 |
CN105355585A (zh) | 2016-02-24 |
TW201135865A (en) | 2011-10-16 |
EP2325877B1 (en) | 2019-01-09 |
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