JP5102500B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP5102500B2 JP5102500B2 JP2007011706A JP2007011706A JP5102500B2 JP 5102500 B2 JP5102500 B2 JP 5102500B2 JP 2007011706 A JP2007011706 A JP 2007011706A JP 2007011706 A JP2007011706 A JP 2007011706A JP 5102500 B2 JP5102500 B2 JP 5102500B2
- Authority
- JP
- Japan
- Prior art keywords
- heat transfer
- focus ring
- transfer film
- substrate processing
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000012545 processing Methods 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 title claims description 57
- 238000012546 transfer Methods 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 238000007639 printing Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 43
- 239000007789 gas Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 17
- 230000004308 accommodation Effects 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002847 impedance measurement Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- ing And Chemical Polishing (AREA)
Description
S 処理空間
10 基板処理装置
11 チャンバ
12 サセプタ
22 静電チャック
22a フォーカスリング載置面
22b 収容溝
24 フォーカスリング
24a 接触面
39 熱伝達膜
40 インピーダンス測定装置
Claims (5)
- 基板を収容する収容室と、該収容室内に配置されて前記基板を載置する載置台と、前記載置された基板の周縁部を囲うように前記載置台に載置される環状のフォーカスリングとを備え、前記収容室内は減圧される基板処理装置において、
前記フォーカスリングにおける前記載置台との接触面に、印刷処理によって熱伝達膜が形成されており、
前記載置台は、前記熱伝達膜と接触する部分において、前記熱伝達膜を収容する溝を有することを特徴とする基板処理装置。 - 前記印刷処理は、スクリーン印刷処理、塗布処理及びスプレー印刷処理のいずれかの1つであることを特徴とする請求項1記載の基板処理装置。
- 前記熱伝達膜は弾性部材からなることを特徴とする請求項1又は2記載の基板処理装置。
- 前記弾性部材は樹脂からなることを特徴とする請求項3記載の基板処理装置。
- 前記熱伝達膜の厚さは0.2mm〜1.0mmであることを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007011706A JP5102500B2 (ja) | 2007-01-22 | 2007-01-22 | 基板処理装置 |
CNA2008100030745A CN101236915A (zh) | 2007-01-22 | 2008-01-18 | 基板处理装置以及聚焦环 |
CN2011100097785A CN102142350A (zh) | 2007-01-22 | 2008-01-18 | 基板处理装置的制造方法以及聚焦环的制造方法 |
US12/016,607 US8043472B2 (en) | 2007-01-22 | 2008-01-18 | Substrate processing apparatus and focus ring |
KR1020080006172A KR100929449B1 (ko) | 2007-01-22 | 2008-01-21 | 기판 처리 장치 및 포커스 링 |
TW097102215A TWI445114B (zh) | 2007-01-22 | 2008-01-21 | A substrate processing device and a focusing ring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007011706A JP5102500B2 (ja) | 2007-01-22 | 2007-01-22 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008177493A JP2008177493A (ja) | 2008-07-31 |
JP5102500B2 true JP5102500B2 (ja) | 2012-12-19 |
Family
ID=39704272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007011706A Expired - Fee Related JP5102500B2 (ja) | 2007-01-22 | 2007-01-22 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8043472B2 (ja) |
JP (1) | JP5102500B2 (ja) |
KR (1) | KR100929449B1 (ja) |
CN (2) | CN101236915A (ja) |
TW (1) | TWI445114B (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004095529A2 (en) * | 2003-03-21 | 2004-11-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
US8524005B2 (en) * | 2006-07-07 | 2013-09-03 | Tokyo Electron Limited | Heat-transfer structure and substrate processing apparatus |
US8143904B2 (en) * | 2008-10-10 | 2012-03-27 | Lam Research Corporation | System and method for testing an electrostatic chuck |
CN101989543B (zh) * | 2009-08-07 | 2012-09-05 | 中微半导体设备(上海)有限公司 | 一种用于减少基片背面聚合物的装置 |
KR101137545B1 (ko) * | 2009-12-30 | 2012-04-20 | 주식회사 탑 엔지니어링 | 일체형 웨이퍼 트레이 |
JP5422413B2 (ja) * | 2010-01-25 | 2014-02-19 | 電気化学工業株式会社 | 放熱部材及びその製造方法 |
JP2011181677A (ja) * | 2010-03-01 | 2011-09-15 | Tokyo Electron Ltd | フォーカスリング及び基板載置システム |
JP5619486B2 (ja) * | 2010-06-23 | 2014-11-05 | 東京エレクトロン株式会社 | フォーカスリング、その製造方法及びプラズマ処理装置 |
US8920564B2 (en) * | 2010-07-02 | 2014-12-30 | Applied Materials, Inc. | Methods and apparatus for thermal based substrate processing with variable temperature capability |
JP5741124B2 (ja) * | 2011-03-29 | 2015-07-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5762798B2 (ja) * | 2011-03-31 | 2015-08-12 | 東京エレクトロン株式会社 | 天井電極板及び基板処理載置 |
US9783889B2 (en) | 2012-03-26 | 2017-10-10 | Applied Materials, Inc. | Apparatus for variable substrate temperature control |
JP6001402B2 (ja) * | 2012-09-28 | 2016-10-05 | 日本特殊陶業株式会社 | 静電チャック |
JP6345030B2 (ja) * | 2014-08-11 | 2018-06-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びフォーカスリング |
JP6430233B2 (ja) * | 2014-12-18 | 2018-11-28 | 東京エレクトロン株式会社 | 伝熱シート及び基板処理装置 |
CN105206559B (zh) * | 2015-08-21 | 2018-09-14 | 沈阳拓荆科技有限公司 | 一种晶圆承载定位机构及安装方法 |
JP6108051B1 (ja) * | 2015-09-25 | 2017-04-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6586394B2 (ja) * | 2016-03-28 | 2019-10-02 | 東京エレクトロン株式会社 | 静電容量を表すデータを取得する方法 |
US11404249B2 (en) * | 2017-03-22 | 2022-08-02 | Tokyo Electron Limited | Substrate processing apparatus |
CN110323117B (zh) * | 2018-03-28 | 2024-06-21 | 三星电子株式会社 | 等离子体处理设备 |
JP7228989B2 (ja) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | 載置台、エッジリングの位置決め方法及び基板処理装置 |
JP7186646B2 (ja) * | 2019-03-22 | 2022-12-09 | 東京エレクトロン株式会社 | 基板処理装置および載置台上のフォーカスリングの有無の検知方法 |
WO2021044885A1 (ja) * | 2019-09-06 | 2021-03-11 | Toto株式会社 | 静電チャック |
JP7454976B2 (ja) * | 2020-03-24 | 2024-03-25 | 東京エレクトロン株式会社 | 基板支持台、プラズマ処理システム及びエッジリングの交換方法 |
JP2021180283A (ja) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | 載置台アセンブリ、基板処理装置および基板処理方法 |
JP7409976B2 (ja) * | 2020-06-22 | 2024-01-09 | 東京エレクトロン株式会社 | プラズマ処理システム、プラズマ処理装置及びエッジリングの交換方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
JP4417574B2 (ja) | 2000-02-14 | 2010-02-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR100635975B1 (ko) * | 2000-02-14 | 2006-10-20 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재 |
JP4592916B2 (ja) | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
JP4559595B2 (ja) * | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | 被処理体の載置装置及びプラズマ処理装置 |
US7232591B2 (en) * | 2002-04-09 | 2007-06-19 | Matsushita Electric Industrial Co., Ltd. | Method of using an adhesive for temperature control during plasma processing |
JP4486372B2 (ja) * | 2003-02-07 | 2010-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4547182B2 (ja) * | 2003-04-24 | 2010-09-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
-
2007
- 2007-01-22 JP JP2007011706A patent/JP5102500B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-18 CN CNA2008100030745A patent/CN101236915A/zh active Pending
- 2008-01-18 US US12/016,607 patent/US8043472B2/en not_active Expired - Fee Related
- 2008-01-18 CN CN2011100097785A patent/CN102142350A/zh active Pending
- 2008-01-21 TW TW097102215A patent/TWI445114B/zh not_active IP Right Cessation
- 2008-01-21 KR KR1020080006172A patent/KR100929449B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20080069132A (ko) | 2008-07-25 |
CN102142350A (zh) | 2011-08-03 |
US8043472B2 (en) | 2011-10-25 |
TW200837865A (en) | 2008-09-16 |
TWI445114B (zh) | 2014-07-11 |
US20080210379A1 (en) | 2008-09-04 |
KR100929449B1 (ko) | 2009-12-02 |
CN101236915A (zh) | 2008-08-06 |
JP2008177493A (ja) | 2008-07-31 |
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