JP2019160816A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 81
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 239000003507 refrigerant Substances 0.000 claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 239000002826 coolant Substances 0.000 claims abstract description 32
- 238000009832 plasma treatment Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 59
- 230000008569 process Effects 0.000 claims description 54
- 238000012546 transfer Methods 0.000 claims description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000005259 measurement Methods 0.000 description 34
- 230000004048 modification Effects 0.000 description 29
- 238000012986 modification Methods 0.000 description 29
- 238000005530 etching Methods 0.000 description 25
- 238000001020 plasma etching Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
Description
まず、一実施形態に係るプラズマエッチング装置1について、図1を参照して説明する。図1は、本実施形態に係るプラズマエッチング装置1の縦断面の一例を示す図である。本実施形態に係るプラズマエッチング装置1は、基板をプラズマ処理するプラズマ処理装置の一例である。本実施形態に係るプラズマエッチング装置1では、半導体ウェハをプラズマエッチングするが、これに限らず、プラズマ処理装置にて成膜やスパッタなどの所望のプラズマ処理が行われる。本実施形態に係るプラズマエッチング装置1は、チャンバ10内に載置台20とガスシャワーヘッド25とを対向配置した平行平板型のプラズマ処理装置(容量結合型プラズマ処理装置)である。載置台20は下部電極としても機能し、ガスシャワーヘッド25は上部電極としても機能する。
406a、406bが設けられている。チャック電極406aには、直流電圧源412a
が接続され、直流電圧源412aからチャック電極406aに直流電圧HV−Aが印加さ
れる。同様に、チャック電極406bには、直流電圧源412bが接続され、直流電圧源
412bからチャック電極406bに直流電圧HV−Bが印加される。これにより、クー
ロン力によって静電チャック106とフォーカスリング108とが静電吸着される。
図2は、一実施形態に係るプラズマエッチング装置1によるプラズマ処理方法の一例を示すフローチャートである。
以上、一実施形態に係るプラズマエッチング装置及びプラズマ処理方法について説明したが、これに限定されるものではない。以下では、他の実施形態について説明する。
上記実施形態では、除去工程における載置台20の載置面の加熱中に、載置台20の載置面とダミー基板の下面との間に伝熱ガスを供給しない例を示したが、載置台20の載置面の加熱を促進するための構造は、これに限定されない。以下では、載置台20の載置面の加熱を促進するための載置台20及びチラー107の構造の変形例1〜5について、説明する。
10 チャンバ
15 ガス供給源
20 載置台
25 ガスシャワーヘッド
32 第1高周波電源
34 第2高周波電源
65 排気装置
85 伝熱ガス供給源
100 制御部
104 基台
104a 冷媒流路
106 静電チャック
107 チラー
Claims (12)
- 載置台の内部に形成された冷媒流路に0℃以下の冷媒を通流させながら、前記載置台の載置面に載置された基板をプラズマ処理するプラズマ処理工程と、
前記載置台の載置面に前記基板に代えてダミー基板を載置する載置工程と、
前記載置台の載置面に前記ダミー基板が載置された状態で、前記ダミー基板を介して処理ガスのプラズマにより前記載置面を加熱しながら、前記処理ガスのプラズマにより前記基板のプラズマ処理に応じた反応生成物を前記載置面の周縁部から除去する除去工程と
を含むプラズマ処理方法。 - 前記除去工程は、前記載置面の加熱中に、前記載置面と前記ダミー基板の下面との間に伝熱ガスを供給しない請求項1に記載のプラズマ処理方法。
- 前記除去工程は、前記載置面の加熱中に、前記載置台の内部における前記載置面の周縁部に対応する領域に配置されたヒータにより前記載置面の周縁部を加熱する請求項1又は2に記載のプラズマ処理方法。
- 前記除去工程は、前記載置面の加熱中に、前記冷媒流路を通流する冷媒の流量を減少させる、若しくは、前記冷媒流路への冷媒の供給を停止する請求項1〜3のいずれか一つに記載のプラズマ処理方法。
- 前記冷媒流路は、前記載置台の内部における前記載置面の中央部に対応する領域に形成された第1の冷媒流路と、前記載置台の内部における前記載置面の周縁部に対応する領域に形成された第2の冷媒流路とを有し、
前記除去工程は、前記載置面の加熱中に、前記第2の冷媒流路を通流する冷媒の流量を減少させる、若しくは、前記第2の冷媒流路への冷媒の供給を停止する請求項4に記載のプラズマ処理方法。 - 前記除去工程は、前記載置面の加熱中に、前記冷媒流路を通流する冷媒の温度を前記基板のプラズマ処理に用いられる温度よりも高い温度へ上昇させる請求項1〜5のいずれか一つに記載のプラズマ処理方法。
- 前記冷媒として、ガスが用いられ、
前記除去工程は、前記載置面の加熱中に、前記ガスを前記冷媒流路から吸引する請求項1〜6のいずれか一つに記載のプラズマ処理方法。 - 前記除去工程は、前記載置面の周縁部から前記基板のプラズマ処理に応じた反応生成物を除去するとともに、チャンバ内に配置された前記載置台以外の他の部材から前記反応生成物を除去する請求項1〜7のいずれか一つに記載のプラズマ処理方法。
- 前記除去工程において、チャンバの内部の圧力は、前記処理ガスのプラズマを前記ダミー基板の周縁部の下面に回り込ませる所定圧力に維持される請求項1〜8のいずれか一つに記載のプラズマ処理方法。
- 前記処理ガスは、フッ素含有ガス及び酸素含有ガスを含む混合ガスである請求項1〜9のいずれか一つに記載のプラズマ処理方法。
- 温度調整された載置台の載置面に載置された基板をプラズマ処理するプラズマ処理工程と、
前記載置台の載置面に前記基板に代えてダミー基板を載置する載置工程と、
前記載置台の載置面に前記ダミー基板が載置された状態で、前記ダミー基板を介して処理ガスのプラズマにより前記載置面を加熱しながら、前記処理ガスのプラズマにより前記基板のプラズマ処理に応じた反応生成物を前記載置面の周縁部から除去する除去工程と
を含むプラズマ処理方法。 - 処理空間を提供するチャンバと、
前記チャンバの内部に設けられ、基板が載置される載置台と、
前記チャンバの内部に処理ガスを供給するためのガス供給部と、
載置台の内部に形成された冷媒流路に0℃以下の冷媒を通流させながら、載置台の載置面に載置された基板をプラズマ処理するプラズマ処理工程と、前記載置台の載置面に前記基板に代えてダミー基板を載置する載置工程と、前記載置台の載置面に前記ダミー基板が載置された状態で、前記ダミー基板を介して処理ガスのプラズマにより前記載置面を加熱しながら、前記処理ガスのプラズマにより前記基板のプラズマ処理に応じた反応生成物を前記載置面の周縁部から除去する除去工程と、を実行する制御部と、
を備えたプラズマ処理装置。
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JP7442365B2 (ja) | 2020-03-27 | 2024-03-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法 |
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