CN105206559B - 一种晶圆承载定位机构及安装方法 - Google Patents
一种晶圆承载定位机构及安装方法 Download PDFInfo
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Abstract
晶圆承载定位机构及安装方法,解决了现有设备在常温和高温条件下,无法精确定位的问题。该定位机构,包括热盘及定位陶瓷环本体。所述热盘上加工有环形凹槽;所述陶瓷环本体放置在热盘的环形凹槽内。安装方法:在常温状态下,热盘的环形凹槽的外圈与陶瓷环本体的常温定位面紧密贴合,陶瓷环本体的底面与热盘的环形凹槽底面贴合,且定位陶瓷环本体边缘的底面与热盘外圈表面留有一定间隙。定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈留有间隙,保证常温下热盘与陶瓷环本体处于同心位置。本发明利用了不同材质在同温度下膨胀量的差异,使晶圆在常温和高温条件下均能被精确定位的机构。具有结构简单、拆装方便、定位精度高及安全可靠的特点。可广泛应用于半导体薄膜沉积的技术领域。
Description
技术领域
本发明涉及一种半导体镀膜设备用的晶圆承载定位机构及安装方法,此机构主要应用于半导体镀膜设备反应腔内常温或高温工艺过程中,属于半导体薄膜沉积的应用技术领域。
背景技术
现有半导体镀膜设备的晶圆承载陶瓷环与热盘的间隙很大,在常温状态下,校准传片位置时需要用目测方法将陶瓷环与热盘进行对中放置,这种方式放置存在较大偏差,而且在获得真空的过程中,陶瓷环可能发生位置偏移,影响传片校准,需重新放置。传片校准完成后,在高温工艺状态下,由于热盘的膨胀,陶瓷环也会偏离原始位置,影响传片。
发明内容
本发明以解决上述问题为目的,设计了晶圆承载定位机构及安装方法,同时解决了现有设备在常温和高温(根据实际工艺要求)条件下,无法精确定位的问题。
为实现上述目的,本发明采用下述技术方案:一种晶圆承载定位机构,包括热盘及定位陶瓷环本体。所述热盘上加工有环形凹槽;所述陶瓷环本体放置在热盘的环形凹槽内。
上述晶圆承载定位机构安装方法:在常温状态下,热盘的环形凹槽的外圈与陶瓷环本体的常温定位面紧密贴合,陶瓷环本体的底面与热盘的环形凹槽底面贴合,定位陶瓷环本体边缘的底面与热盘外圈表面留有一定间隙,是为了防止高温状态时,热盘在纵向上的膨胀,顶起定位陶瓷环本体边缘底面,使定位陶瓷环本体的底面与热盘的环形凹槽的底面分离;定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈留有间隙,保证常温下热盘与陶瓷环本体处于同心位置。当温度逐渐升高时,由于热盘材料的膨胀系数比陶瓷环本体材料的膨胀系数大,因此热盘膨胀速度快,定位陶瓷环本体膨胀速度慢,热盘的环形凹槽的外圈与定位陶瓷环本体的常温定位面间隙逐渐增大,定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈间隙逐渐减小,达到工艺温度时,定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈间隙基本为零或非常小,这样保证了在高温状态下热盘与陶瓷环本体处于同心位置。
本发明的有益效果及特点在于:
该机构利用了不同材质在同温度下膨胀量的差异,使晶圆在常温和高温条件下均能被精确定位的机构。具有结构简单合理、易加工及拆装方便、定位精度高、安全可靠的特点。可广泛应用于半导体薄膜沉积的技术领域。
附图说明
图1是本发明的结构示意图。
图2为局部放大示意图。
图中零件标号分别代表:
1、热盘;2、定位陶瓷环本体;3、陶瓷环边缘底面;4、陶瓷环高温定位面;5、陶瓷环常温定位面;6、陶瓷环底面;7、环形凹槽。
具体实施方式
实施例
参照图1-2,一种晶圆承载定位机构,包括热盘1及定位陶瓷环本体2。所述热盘1上加工有环形凹槽7;所述陶瓷环本体2放置在热盘1的环形凹槽7内。
上述晶圆承载定位机构的安装方法:在常温状态下,热盘1的环形凹槽7的外圈与陶瓷环本体2的常温定位面5紧密贴合。陶瓷环本体2的底面6与热盘1的环形凹槽7底面贴合。定位陶瓷环本体2边缘的底面3与热盘1外圈表面留有一定间隙,是为了防止高温状态时,热盘在纵向上的膨胀,顶起定位陶瓷环本体2边缘底面,使定位陶瓷环本体2的底面6与热盘1的环形凹槽7的底面分离。定位陶瓷环本体2的高温定位面4与热盘1的环形凹槽7内圈留有间隙,保证常温下热盘1与陶瓷环本体2处于同心位置。当温度逐渐升高时,由于热盘1材料的膨胀系数比陶瓷环本体2材料的膨胀系数大,因此热盘1膨胀速度快,定位陶瓷环本体2膨胀速度慢,热盘1的环形凹槽7的外圈与定位陶瓷环本体2的常温定位面5间隙逐渐增大,定位陶瓷环本体2的高温定位面4与热盘1的环形凹槽7内圈间隙逐渐减小,达到工艺温度时,定位陶瓷环本体2的高温定位面4与热盘1的环形凹槽7内圈间隙基本为零或非常小,这样保证了在高温状态下热盘1与陶瓷环本体2处于同心位置。
Claims (1)
1.一种晶圆承载定位机构的安装方法,该方法中使用的定位机构包括热盘及定位陶瓷环本体,所述热盘上加工有环形凹槽;所述陶瓷环本体放置在热盘的环形凹槽内,该方法在常温状态下,热盘的环形凹槽的外圈与陶瓷环本体的常温定位面紧密贴合,陶瓷环本体的底面与热盘的环形凹槽底面贴合,定位陶瓷环本体边缘的底面与热盘外圈表面留有一定间隙,是为了防止高温状态时,热盘在纵向上的膨胀,顶起定位陶瓷环本体边缘底面,使定位陶瓷环本体的底面与热盘的环形凹槽的底面分离;定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈留有间隙,保证常温下热盘与陶瓷环本体处于同心位置,当温度逐渐升高时,由于热盘材料的膨胀系数比陶瓷环本体材料的膨胀系数大,因此热盘膨胀速度快,定位陶瓷环本体膨胀速度慢,热盘的环形凹槽的外圈与定位陶瓷环本体的常温定位面间隙逐渐增大,定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈间隙逐渐减小,达到工艺温度时,定位陶瓷环本体的高温定位面与热盘的环形凹槽内圈间隙基本为零或非常小,这样保证了在高温状态下热盘与陶瓷环本体处于同心位置。
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CN204271061U (zh) * | 2014-11-12 | 2015-04-15 | 天虹科技股份有限公司 | 晶圆承载盘 |
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JP5255936B2 (ja) * | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置 |
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CN101236915A (zh) * | 2007-01-22 | 2008-08-06 | 东京毅力科创株式会社 | 基板处理装置以及聚焦环 |
CN102150478A (zh) * | 2008-09-10 | 2011-08-10 | 应用材料股份有限公司 | 用于等离子处理腔室的低倾斜度边缘环 |
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CN103996648A (zh) * | 2014-05-30 | 2014-08-20 | 沈阳拓荆科技有限公司 | 螺接式陶瓷环定位用销 |
CN204271061U (zh) * | 2014-11-12 | 2015-04-15 | 天虹科技股份有限公司 | 晶圆承载盘 |
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