KR102233920B1 - 정전 척 장치 - Google Patents

정전 척 장치 Download PDF

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Publication number
KR102233920B1
KR102233920B1 KR1020177003865A KR20177003865A KR102233920B1 KR 102233920 B1 KR102233920 B1 KR 102233920B1 KR 1020177003865 A KR1020177003865 A KR 1020177003865A KR 20177003865 A KR20177003865 A KR 20177003865A KR 102233920 B1 KR102233920 B1 KR 102233920B1
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KR
South Korea
Prior art keywords
focus ring
electrostatic chuck
pair
convex portion
embankment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177003865A
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English (en)
Korean (ko)
Other versions
KR20170062440A (ko
Inventor
히토시 고노
겐타로 다카하시
후미히로 고보
Original Assignee
스미토모 오사카 세멘토 가부시키가이샤
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Publication of KR20170062440A publication Critical patent/KR20170062440A/ko
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Publication of KR102233920B1 publication Critical patent/KR102233920B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020177003865A 2014-09-30 2015-09-24 정전 척 장치 Active KR102233920B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014201302 2014-09-30
JPJP-P-2014-201303 2014-09-30
JPJP-P-2014-201302 2014-09-30
JP2014201303 2014-09-30
PCT/JP2015/076890 WO2016052291A1 (ja) 2014-09-30 2015-09-24 静電チャック装置

Publications (2)

Publication Number Publication Date
KR20170062440A KR20170062440A (ko) 2017-06-07
KR102233920B1 true KR102233920B1 (ko) 2021-03-30

Family

ID=55630330

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177003865A Active KR102233920B1 (ko) 2014-09-30 2015-09-24 정전 척 장치

Country Status (5)

Country Link
US (1) US10262886B2 (enExample)
JP (2) JP6149945B2 (enExample)
KR (1) KR102233920B1 (enExample)
CN (1) CN106716619B (enExample)
WO (1) WO2016052291A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10355624B2 (en) * 2014-10-09 2019-07-16 Carnegie Mellon University Electrostatic clutch
US10755902B2 (en) * 2015-05-27 2020-08-25 Tokyo Electron Limited Plasma processing apparatus and focus ring
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
JP6552346B2 (ja) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置
JP7140183B2 (ja) * 2018-02-20 2022-09-21 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
JP2019151879A (ja) * 2018-03-01 2019-09-12 株式会社アルバック 成膜装置
US11471987B2 (en) 2018-08-02 2022-10-18 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device and electrostatic chuck device manufacturing method
CN111801787B (zh) * 2018-09-13 2023-10-03 日本碍子株式会社 晶圆载置装置
US12300473B2 (en) 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
JP7271330B2 (ja) * 2019-06-18 2023-05-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2021166270A (ja) * 2020-04-08 2021-10-14 東京エレクトロン株式会社 エッジリング、載置台及び基板処理装置
JP7537842B2 (ja) * 2020-10-06 2024-08-21 東京エレクトロン株式会社 基板支持体、基板処理装置および基板処理方法
CN115621109A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 等离子体处理装置
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
IT202200021483A1 (it) * 2022-10-18 2024-04-18 Gdm Spa Metodo di individuazione predittiva di difetti in articoli assorbenti igienici
WO2025111094A1 (en) * 2023-11-20 2025-05-30 Lam Research Corporation Electrostatic chuck with thermal interface for providing cooling uniformity and increasing voltage standoff
WO2025142585A1 (ja) * 2023-12-26 2025-07-03 東京エレクトロン株式会社 基板処理装置及び静電チャック
JP7780062B1 (ja) 2024-11-06 2025-12-03 日本碍子株式会社 ウエハ載置台

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064460A (ja) 2003-04-24 2005-03-10 Tokyo Electron Ltd プラズマ処理装置、フォーカスリング及び被処理体の載置装置
JP2007258500A (ja) 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
KR101048066B1 (ko) 2009-08-25 2011-07-11 세메스 주식회사 기판 처리 장치
KR101066974B1 (ko) 2009-06-24 2011-09-22 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
JP2012134375A (ja) * 2010-12-22 2012-07-12 Tokyo Electron Ltd 基板処理装置及び基板処理方法

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JPH09237827A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd 静電吸着装置及びそれを用いた電子ビーム露光装置
JPH10233434A (ja) * 1997-02-21 1998-09-02 Hitachi Ltd 静電吸着体と静電吸着装置
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JP4729884B2 (ja) * 2003-09-08 2011-07-20 東京エレクトロン株式会社 プラズマエッチング方法
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JP5142914B2 (ja) * 2008-09-25 2013-02-13 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
IT1404310B1 (it) * 2011-02-24 2013-11-22 Gdm Spa Metodo di intervento correttivo sul funzionamento di una linea di produzione di articoli assorbenti igienici, quali pannolini, tamponi e simili.
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
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JP2014107387A (ja) * 2012-11-27 2014-06-09 Tokyo Electron Ltd 載置台構造及びフォーカスリングを保持する方法
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2013153171A (ja) * 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064460A (ja) 2003-04-24 2005-03-10 Tokyo Electron Ltd プラズマ処理装置、フォーカスリング及び被処理体の載置装置
JP2007258500A (ja) 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
KR101066974B1 (ko) 2009-06-24 2011-09-22 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
KR101048066B1 (ko) 2009-08-25 2011-07-11 세메스 주식회사 기판 처리 장치
JP2012134375A (ja) * 2010-12-22 2012-07-12 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
WO2016052291A1 (ja) 2016-04-07
US10262886B2 (en) 2019-04-16
CN106716619A (zh) 2017-05-24
US20170287764A1 (en) 2017-10-05
CN106716619B (zh) 2020-09-15
KR20170062440A (ko) 2017-06-07
JP2017130687A (ja) 2017-07-27
JP6149945B2 (ja) 2017-06-21
JP6489146B2 (ja) 2019-03-27
JPWO2016052291A1 (ja) 2017-04-27

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