CN106716619B - 静电吸盘装置 - Google Patents

静电吸盘装置 Download PDF

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Publication number
CN106716619B
CN106716619B CN201580051119.4A CN201580051119A CN106716619B CN 106716619 B CN106716619 B CN 106716619B CN 201580051119 A CN201580051119 A CN 201580051119A CN 106716619 B CN106716619 B CN 106716619B
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CN
China
Prior art keywords
focus ring
electrostatic chuck
chuck device
bank
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580051119.4A
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English (en)
Chinese (zh)
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CN106716619A (zh
Inventor
河野仁
高桥健太郎
牛坊文洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Osaka Cement Co Ltd
Original Assignee
Sumitomo Osaka Cement Co Ltd
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Publication date
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Publication of CN106716619A publication Critical patent/CN106716619A/zh
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Publication of CN106716619B publication Critical patent/CN106716619B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201580051119.4A 2014-09-30 2015-09-24 静电吸盘装置 Active CN106716619B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014201302 2014-09-30
JP2014-201303 2014-09-30
JP2014-201302 2014-09-30
JP2014201303 2014-09-30
PCT/JP2015/076890 WO2016052291A1 (ja) 2014-09-30 2015-09-24 静電チャック装置

Publications (2)

Publication Number Publication Date
CN106716619A CN106716619A (zh) 2017-05-24
CN106716619B true CN106716619B (zh) 2020-09-15

Family

ID=55630330

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580051119.4A Active CN106716619B (zh) 2014-09-30 2015-09-24 静电吸盘装置

Country Status (5)

Country Link
US (1) US10262886B2 (enExample)
JP (2) JP6149945B2 (enExample)
KR (1) KR102233920B1 (enExample)
CN (1) CN106716619B (enExample)
WO (1) WO2016052291A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10355624B2 (en) * 2014-10-09 2019-07-16 Carnegie Mellon University Electrostatic clutch
US10755902B2 (en) * 2015-05-27 2020-08-25 Tokyo Electron Limited Plasma processing apparatus and focus ring
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
JP6552346B2 (ja) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置
JP7140183B2 (ja) * 2018-02-20 2022-09-21 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
JP2019151879A (ja) * 2018-03-01 2019-09-12 株式会社アルバック 成膜装置
US11471987B2 (en) 2018-08-02 2022-10-18 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device and electrostatic chuck device manufacturing method
CN111801787B (zh) * 2018-09-13 2023-10-03 日本碍子株式会社 晶圆载置装置
US12300473B2 (en) 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
JP7271330B2 (ja) * 2019-06-18 2023-05-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2021166270A (ja) * 2020-04-08 2021-10-14 東京エレクトロン株式会社 エッジリング、載置台及び基板処理装置
JP7537842B2 (ja) * 2020-10-06 2024-08-21 東京エレクトロン株式会社 基板支持体、基板処理装置および基板処理方法
CN115621109A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 等离子体处理装置
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
IT202200021483A1 (it) * 2022-10-18 2024-04-18 Gdm Spa Metodo di individuazione predittiva di difetti in articoli assorbenti igienici
WO2025111094A1 (en) * 2023-11-20 2025-05-30 Lam Research Corporation Electrostatic chuck with thermal interface for providing cooling uniformity and increasing voltage standoff
WO2025142585A1 (ja) * 2023-12-26 2025-07-03 東京エレクトロン株式会社 基板処理装置及び静電チャック
JP7780062B1 (ja) 2024-11-06 2025-12-03 日本碍子株式会社 ウエハ載置台

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204626A (ja) * 1998-01-16 1999-07-30 Anelva Corp 真空処理装置
JP2005033062A (ja) * 2003-07-08 2005-02-03 Tokyo Electron Ltd プラズマ処理装置、フォーカスリング及びプラズマ処理方法
CN102569130A (zh) * 2010-12-22 2012-07-11 东京毅力科创株式会社 基板处理装置及基板处理方法

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JPS60247610A (ja) * 1984-05-23 1985-12-07 Sumitomo Electric Ind Ltd 無機フアイバ保護構造体
JPH09237827A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd 静電吸着装置及びそれを用いた電子ビーム露光装置
JPH10233434A (ja) * 1997-02-21 1998-09-02 Hitachi Ltd 静電吸着体と静電吸着装置
JP4559595B2 (ja) 2000-07-17 2010-10-06 東京エレクトロン株式会社 被処理体の載置装置及びプラズマ処理装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
JP4547182B2 (ja) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 プラズマ処理装置
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4729884B2 (ja) * 2003-09-08 2011-07-20 東京エレクトロン株式会社 プラズマエッチング方法
US7663860B2 (en) 2003-12-05 2010-02-16 Tokyo Electron Limited Electrostatic chuck
JP4674792B2 (ja) * 2003-12-05 2011-04-20 東京エレクトロン株式会社 静電チャック
JP4417197B2 (ja) * 2004-07-30 2010-02-17 住友大阪セメント株式会社 サセプタ装置
US7532310B2 (en) 2004-10-22 2009-05-12 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP5142914B2 (ja) * 2008-09-25 2013-02-13 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR101048066B1 (ko) * 2009-08-25 2011-07-11 세메스 주식회사 기판 처리 장치
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
IT1404310B1 (it) * 2011-02-24 2013-11-22 Gdm Spa Metodo di intervento correttivo sul funzionamento di una linea di produzione di articoli assorbenti igienici, quali pannolini, tamponi e simili.
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
JP5063797B2 (ja) * 2011-05-23 2012-10-31 京セラ株式会社 吸着部材、吸着装置および吸着方法
JP2014107387A (ja) * 2012-11-27 2014-06-09 Tokyo Electron Ltd 載置台構造及びフォーカスリングを保持する方法
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2013153171A (ja) * 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204626A (ja) * 1998-01-16 1999-07-30 Anelva Corp 真空処理装置
JP2005033062A (ja) * 2003-07-08 2005-02-03 Tokyo Electron Ltd プラズマ処理装置、フォーカスリング及びプラズマ処理方法
CN102569130A (zh) * 2010-12-22 2012-07-11 东京毅力科创株式会社 基板处理装置及基板处理方法

Also Published As

Publication number Publication date
WO2016052291A1 (ja) 2016-04-07
US10262886B2 (en) 2019-04-16
CN106716619A (zh) 2017-05-24
US20170287764A1 (en) 2017-10-05
KR20170062440A (ko) 2017-06-07
JP2017130687A (ja) 2017-07-27
KR102233920B1 (ko) 2021-03-30
JP6149945B2 (ja) 2017-06-21
JP6489146B2 (ja) 2019-03-27
JPWO2016052291A1 (ja) 2017-04-27

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