JP2012216607A - 天井電極板及び基板処理載置 - Google Patents
天井電極板及び基板処理載置 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
【解決手段】プラズマ処理装置10において、基板載置台12と処理空間Sを挟んで対向するように配置された天井電極板31は、クーリングプレート32を介して電極支持体33に当接、支持されており、クーリングプレート32との当接面には伝熱シート38が形成されている。伝熱シート38は、熱伝導率が0.5〜2.0W/m・Kの範囲にあり、シリコンを成分に含む耐熱性の粘着剤やゴム、及び該粘着剤やゴムに混入された酸化物、窒化物または炭化物のセラミックスフィラーを、該粘着剤やゴム中に25〜60体積%で含み、その膜厚は、例えば30μm〜80μmであり、天井電極板31の各ガス孔34の近傍の所定領域を回避するように塗布し、形成されている。
【選択図】図3
Description
S 処理空間
10 プラズマ処理装置
11 チャンバ
12 サセプタ
30 シャワーヘッド
31 天井電極板
32 クーリングプレート
33 電極支持体
34 ガス孔
38 伝熱シート
40 ボルト用の孔
41 開口部
Claims (10)
- 温度調整機構を有する電極支持体に釣支された天井電極板であって、
前記電極支持体にクーリングプレートを介して当接されており、該クーリングプレートとの当接面に伝熱シートが形成されていることを特徴とする天井電極板。 - 前記天井電極板には多数のガス孔が設けられており、前記伝熱シートは、前記ガス孔の近傍の所定領域を避けるように形成されていることを特徴とする請求項1記載の天井電極板。
- 前記伝熱シートは、前記ガス孔の中心を中心として半径1.5mm乃至2.5mmの円形領域を避けるように形成されていることを特徴とする請求項2記載の天井電極板。
- 前記伝熱シートの膜厚は、100μm以下であることを特徴とする請求項1乃至3のいずれか1項に記載の天井電極板。
- 前記伝熱シートの膜厚は、30μm乃至80μmであることを特徴とする請求項4記載の天井電極板。
- 前記天井電極板は、処理空間を隔てて基板載置台と対向するように配置され、前記伝熱シートは、前記基板載置台の中心部に対向する位置と、前記基板載置台の周辺部に対向する位置とでは、その膜厚が異なっていることを特徴とする請求項4又は5記載の天井電極板。
- 前記クーリングプレートの前記伝熱シートとの当接面に離型材が塗布されていることを特徴とする請求項1乃至6のいずれか1項に記載の天井電極板。
- 前記電極支持体と前記クーリングプレートとの当接面に前記伝熱シートが介在されていることを特徴とする請求項1乃至7のいずれか1項に記載の天井電極板。
- 前記伝熱シートの熱伝導率は、0.5〜2.0W/m・Kであることを特徴とする請求項1乃至8のいずれか1項に記載の天井電極板。
- 天井電極板と、該天井電極板とは処理空間を隔てて対向するように配置された基板載置台とを有し、該基板載置台に載置された基板に対して所定の処理を施す基板処理装置であって、前記天井電極板として、請求項1乃至9のいずれか1項に記載の天井電極板を有することを特徴とする基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011079732A JP5762798B2 (ja) | 2011-03-31 | 2011-03-31 | 天井電極板及び基板処理載置 |
TW101110630A TWI517242B (zh) | 2011-03-31 | 2012-03-27 | 頂部電極板及基板處理裝置 |
KR1020120033070A KR101889806B1 (ko) | 2011-03-31 | 2012-03-30 | 천정 전극판 및 기판 처리 장치 |
US13/435,631 US9117857B2 (en) | 2011-03-31 | 2012-03-30 | Ceiling electrode plate and substrate processing apparatus |
CN201210101424.8A CN102738041B (zh) | 2011-03-31 | 2012-03-31 | 上部电极板以及基板处理装置 |
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JP2011079732A JP5762798B2 (ja) | 2011-03-31 | 2011-03-31 | 天井電極板及び基板処理載置 |
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JP5762798B2 JP5762798B2 (ja) | 2015-08-12 |
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US (1) | US9117857B2 (ja) |
JP (1) | JP5762798B2 (ja) |
KR (1) | KR101889806B1 (ja) |
CN (1) | CN102738041B (ja) |
TW (1) | TWI517242B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10622196B2 (en) | 2013-08-21 | 2020-04-14 | Tokyo Electron Limited | Plasma processing apparatus |
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CN102797012A (zh) * | 2012-07-27 | 2012-11-28 | 京东方科技集团股份有限公司 | 一种刻蚀设备及其上部电极 |
CN103305812A (zh) * | 2013-06-08 | 2013-09-18 | 上海和辉光电有限公司 | 一种上电极装置 |
JP6544902B2 (ja) * | 2014-09-18 | 2019-07-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN106356315B (zh) * | 2015-07-13 | 2020-08-04 | 中微半导体设备(上海)股份有限公司 | 一种气体喷淋装置 |
KR102537309B1 (ko) * | 2015-10-08 | 2023-05-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 감소된 배면 플라즈마 점화를 갖는 샤워헤드 |
US10154542B2 (en) | 2015-10-19 | 2018-12-11 | Watlow Electric Manufacturing Company | Composite device with cylindrical anisotropic thermal conductivity |
CN111524775B (zh) * | 2019-02-01 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | 一种等离子处理器以及用于等离子处理器的上电极组件 |
CN113097097A (zh) * | 2019-12-23 | 2021-07-09 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀装置及其工作方法 |
WO2021177456A1 (ja) | 2020-03-05 | 2021-09-10 | 三菱マテリアル株式会社 | プラズマ処理装置用部材とその製造方法、及びプラズマ処理装置 |
US20220093361A1 (en) * | 2020-09-22 | 2022-03-24 | Applied Materials, Inc. | Showerhead assembly with recursive gas channels |
CN112133619B (zh) * | 2020-09-22 | 2023-06-23 | 重庆臻宝科技股份有限公司 | 下部电极塑封夹具及塑封工艺 |
CN114334700A (zh) * | 2020-09-29 | 2022-04-12 | 长鑫存储技术有限公司 | 半导体设备电极板的安装治具 |
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- 2012-03-30 US US13/435,631 patent/US9117857B2/en active Active
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CN102738041A (zh) | 2012-10-17 |
TWI517242B (zh) | 2016-01-11 |
KR101889806B1 (ko) | 2018-08-20 |
US9117857B2 (en) | 2015-08-25 |
JP5762798B2 (ja) | 2015-08-12 |
KR20120112218A (ko) | 2012-10-11 |
US20120247672A1 (en) | 2012-10-04 |
CN102738041B (zh) | 2014-12-17 |
TW201310524A (zh) | 2013-03-01 |
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