WO2014168331A1 - 기판처리장치 - Google Patents
기판처리장치 Download PDFInfo
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- WO2014168331A1 WO2014168331A1 PCT/KR2014/001258 KR2014001258W WO2014168331A1 WO 2014168331 A1 WO2014168331 A1 WO 2014168331A1 KR 2014001258 W KR2014001258 W KR 2014001258W WO 2014168331 A1 WO2014168331 A1 WO 2014168331A1
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- substrate
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- chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Definitions
- the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for preventing a process film from being formed due to a process gas on a substrate rear surface of a batch type substrate processing apparatus.
- Substrate processing apparatus used in the manufacture of semiconductors, flat panel displays and solar cells is responsible for the necessary heat treatment steps for processes such as crystallization and phase change for a predetermined thin film deposited on a substrate such as a silicon wafer or glass.
- Representative annealing apparatus is a silicon crystallization apparatus that crystallizes amorphous silicon deposited on a substrate into polysilicon when manufacturing a liquid crystal display or a thin film crystalline silicon solar cell.
- a heat treatment apparatus capable of heating a substrate on which a predetermined thin film is formed should be provided.
- crystallization of amorphous silicon requires a temperature of at least 550 to 600 degrees.
- heat treatment is meant herein the process of heating the workpiece or substrate to a desired temperature, typically in the range of about 350 to 1300 degrees.
- Heat treatment of the semiconductor substrate may include, for example, heat treatment, annealing, diffusion or driving of the dopant material, chemical vapor deposition, ie deposition or growth of a layer of material, such as CVD, and etching or removal of material from the substrate.
- substrate processing apparatuses include a single wafer type capable of performing heat treatment on one substrate and a batch type capable of performing heat treatment on a plurality of substrates.
- Single leaf type has the advantage of simple configuration of the device, but the disadvantage of low productivity has been in the spotlight for the recent mass production.
- the batch substrate processing apparatus includes a substrate loading boat for loading a large amount of substrate into the chamber in order to improve processing capability.
- a substrate loading boat for loading a large amount of substrate into the chamber in order to improve processing capability.
- the slot since the slot locally mounts the edge portion of the substrate during the process, for example, boats and slots that support both surfaces of the semiconductor substrate and the lower portion of the semiconductor substrate during the film forming process. In all of these, a film for semiconductor processing is formed.
- the film integrally connected to the substrate and the slot is crushed, particles are generated during crushing, and mechanical stress is increased on the back side of the substrate, causing the semiconductor substrate to bend.
- the film uniformity of the back surface of the semiconductor substrate is significantly reduced compared to the film uniformity of the front surface, it causes many process problems in subsequent processes, especially photolithography.
- An object of the present invention is to prevent the process film is formed on the back of the substrate.
- a substrate processing apparatus includes a chamber providing a loading space in which a substrate is loaded and a process space in which a process for the substrate is performed; A boat having at least one boat frame standing upright along a vertical direction, the boat being movable to the loading space and the process space through lifting; A plurality of susceptors installed on the boat frame and spaced apart along the longitudinal direction of the boat frame, the substrate being sequentially placed on an upper surface of the boat frame as the boat moves to the process space; A vertical rod disposed in parallel with the boat frame and a substrate support tip protruding from an inner side surface of the vertical rod to support the substrate, wherein the vertical rod has a longitudinal direction of the boat frame when the boat moves to the process space; And one or more holders that move relatively along.
- the chamber has a connection space formed between the loading space and the process space, and the substrate processing apparatus is disposed on the connection space to block the loading space and the process space, and is connected to an upper end of the vertical rod.
- the boat may further include a grip plate which moves to the process space together with the boat when the boat moves from the loading space to the process space.
- the chamber may include: a lower chamber having an upper portion opened and formed at one side thereof and having a passage through which the substrate enters and exits from the loading space; And an upper chamber installed at an upper portion of the lower chamber and having an open lower portion communicating with an open upper portion of the lower chamber, and providing the process space.
- the substrate processing apparatus may further include a support ring installed in the connection space and having a support protrusion protruding from the inner surface to support the grip plate placed on the upper portion.
- the holder may move relatively through an insertion hole formed in the susceptor when the boat moves to the process space.
- the susceptor may be recessed from an upper surface thereof to have a shape corresponding to the substrate, and may have a seating groove in which the substrate is placed.
- the substrate processing apparatus may further include an upper blocking plate connected to an upper portion of the boat frame and lifting the grip plate when the boat moves to the process space.
- the upper blocking plate may have a through hole formed at a position corresponding to the holder, and the holder may be movable through the through hole when the boat moves to the process space.
- the boat frame may protrude from the inner side to support the susceptor, and may include a susceptor support tip spaced apart along the longitudinal direction of the boat frame.
- a process film may be prevented from being formed on the rear surface of the substrate. Therefore, the yield of a board
- FIG. 1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
- FIG 2 is a view showing a state in which the boat shown in Figure 1 is switched to the process position.
- FIG. 3 is a perspective view showing the boat unit shown in FIG.
- FIG. 4 is a diagram illustrating the susceptor shown in FIG. 3.
- 5 to 8 are views illustrating a process in which a substrate is loaded into a susceptor.
- 9 to 11 are views illustrating a process in which the boat unit is switched to the process position.
- the present invention can be applied to various target objects in addition to the substrate W described in the embodiments.
- the type of substrate that can be processed in the present invention is not particularly limited. Therefore, substrates of various materials, such as glass, plastic, polymer, silicon wafer, stainless steel, and sapphire, which are generally used throughout the semiconductor process, can be processed in the substrate treating apparatus of the present invention.
- the treatment of the substrate in the present invention may be understood to include the case of processing not only the substrate itself but also a predetermined film or pattern formed on the substrate.
- the use of the substrate processing apparatus of the present invention is also not particularly limited. Therefore, an overall semiconductor process, for example, a deposition process, an etching process, a surface modification process, and the like may be performed using the substrate processing apparatus of the present invention.
- an overall semiconductor process for example, a deposition process, an etching process, a surface modification process, and the like may be performed using the substrate processing apparatus of the present invention.
- only the main components of the present invention will be described, and it is apparent that various components may be additionally included in the substrate processing apparatus of the present invention according to the purpose of use.
- FIG. 1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention
- Figure 2 is a view showing a state in which the boat shown in Figure 1 is switched to the process position.
- the substrate processing apparatus 100 closes the lower chamber 20 having the shape of which the upper part is open and the open upper part of the lower chamber 20 and processes the substrate W.
- FIG. It includes a process chamber 10 for providing a process space 12 is made.
- the support ring 30 is installed in the open lower portion of the process chamber 10 and the open upper portion ('connection space') of the lower chamber 20, and may have a support protrusion 35 protruding from the inner circumferential surface.
- the lower chamber 20 may have a passage 3 through which the substrate W is transferred, and the substrate W may be transferred into the lower chamber 20 through the passage 3.
- the passage 3 of the lower chamber 20 may be connected to a transfer chamber (not shown) connected to a plurality of process chambers, and the substrate W may be connected to an end effector (end-dffector) from the transfer chamber. 65 of FIG. 5 may be transferred into the lower chamber 20.
- the gate valve 4 is installed outside the passage 3, and the passage 3 can be opened and closed by the gate valve 4.
- a boat 41 on which a plurality of substrates W transported through the passage 3 are mounted is installed inside the substrate processing apparatus 100. While the boat 41 is located in the loading space 22 provided in the lower chamber 20 (or 'loading position'), the substrate W may be loaded in the boat 20.
- the boat 20 may include an upper boat 42 on which a substrate is loaded and a lower boat 43 connected to the lower portion of the upper boat 42 to support the upper boat 42.
- a plurality of insulating plates 67 are disposed on the lower boat 43 to minimize heat loss inside the process chamber 10 through the open lower portion of the process chamber 20. It may be provided.
- the boat unit 40 includes an upper boat 42 having a susceptor 55 on which a substrate W is loaded, a lower boat 43 having a heat insulation plate 67, and a substrate W. ) And a grip plate 44, a holder 45, and an upper blocking plate 50 for easily loading the susceptor 55.
- the susceptor 55 is placed on a susceptor support tip 62 (or slot) of FIG. 5, which is formed so that the substrates W protrude side by side in the inner direction of the boat 41, and as described below, the boat As the 41 rises, the substrate W may be sequentially loaded in the vertical direction on the susceptor 55 placed on the next susceptor support tip 62 of FIG. 5.
- the substrate (W) is all loaded on the susceptor 55, the boat 41 is moved to the interior of the internal reaction tube 14 (or 'process position'), the process for the substrate (W) can be made have.
- a base plate 69 may be installed below the lower boat 43, and the base plate 69 may be elevated together with the boat 41. When the boat 41 is switched to the process position, the base plate 69 closes the process space 16.
- the insulation plate 67 and the base plate 69 may be made of ceramic, quartz, or a metal coated with ceramic, and minimize the movement of heat in the reaction zone to the loading space 22 during the process. Can be.
- the motor housing 70 is installed below the base plate 29.
- One side of the rotating shaft 72 is connected to the lower boat 43, a rotating motor (not shown) for rotating the rotating shaft 72 may be fixedly installed in the motor housing 70.
- the rotation motor may rotate the boat 41 together with the rotation shaft 72 by driving the rotation shaft 72 when the boat 41 is switched to the process position to process the substrate W.
- the motor housing 70 is fixed to the bracket 74, and the bracket 74 moves up and down along the lifting rod 76 connected to the lower chamber 20.
- the bracket 74 is screwed to the elevating rod 74, the elevating rod 74 is connected to the elevating motor 77, the bracket 74 can be raised and lowered by the rotation of the elevating rod 74. That is, the lifting rod 74 rotates by the rotation of the lifting motor 77, and thus the bracket 74 and the motor housing 70 can be lifted together.
- the process chamber 10 has an internal space 12 to perform a process on the substrate W, and the internal reaction tube 14 is installed in the internal space 12.
- the internal reaction tube 14 forms a process space 16 to process the substrate W, and partitions the internal space 12 and the process space 16 of the process chamber 10. That is, as shown in FIG. 2, when the boat 41 is lifted into the process space 16 and switched to the process position, the process may be performed by minimizing the process space 16 for the substrate W.
- the substrate processing apparatus 100 may include a heater (not shown) that heats the substrate W.
- the substrate processing apparatus 100 may include a heater along the upper side or the sidewall of the process chamber 10.
- the substrate processing apparatus 100 may include a plurality of supply nozzles 82 and exhaust nozzles 84 that supply process gases to the process space 16.
- the supply nozzle 82 is connected to the gas supply line 80 formed at one side of the process chamber 10 and receives a process gas from the outside.
- Process gas can be supplied and exhausted toward the substrate W through a supply port and an exhaust port (not shown) formed in the supply nozzle 82 and the exhaust nozzle 84, respectively, and the height of the supply port and the exhaust port may be different from each other. .
- the supply nozzle 82 and the supply port may be positioned in the process space 14 to supply the reaction gas to the stacked substrates W.
- the exhaust nozzle 84 is installed on the opposite side of the supply nozzle 82 may discharge the unreacted gas and the reaction by-products generated during the process to the outside.
- the exhaust nozzle 84 is connected to the first output line 85, and the unreacted gas and reaction by-products sucked through the exhaust nozzle 84 are discharged through the first output line 85.
- An output valve (not shown) may be installed on the first output line 85 and open or close the first output line 85.
- a turbo pump 86 may be installed on the first output line 85 to forcibly discharge unreacted gas and reaction byproducts.
- the lower chamber 20 may also be connected to the second output line 88 so that the loading space 22 may be exhausted through the second output line 88.
- the substrate processing apparatus 100 includes a boat 41 for loading a large amount of the substrate W therein in order to improve processing capability.
- the substrate placed on the slot of the boat 41 is locally mounted to the edge portion of the substrate.
- the process film is also formed on both the boat 41 and the slots that support both surfaces of the semiconductor substrate and the lower portion of the substrate W.
- the film integrally connected to the substrate W and the slot is crushed, particles are generated during the crushing, and mechanical stress is gradually increased on the back side of the substrate W.
- the phenomenon that the substrate W bends occurs.
- the film uniformity of the back surface of the substrate W is significantly reduced compared to the film uniformity of the front surface, it causes many process problems in subsequent processes, especially photolithography.
- the substrate processing apparatus 100 of the present invention loads the substrate W on the upper part of the susceptor 55 to prevent the film on the rear surface of the substrate W from being formed, and thus the process gas flows into the rear surface of the substrate W. Blocking may prevent the film from being formed on the rear surface of the substrate (W).
- FIG. 3 is a view showing the boat unit shown in FIG. 1
- FIG. 4 is a view showing the susceptor shown in FIG.
- the boat unit 40 includes an upper boat 42 and a lower boat 43.
- the upper boat 41 has a susceptor 55 placed on the susceptor support tip (62 in FIG. 5) of the column boat frame 60 and an upper blocking plate 50 connected to the upper portion of the boat frame 60.
- the lower boat 43 may be provided with a heat insulating plate 67.
- the boat unit 40 further includes a grip plate 44 and a holder 45, the configuration and operation of the invention omitted below may be replaced by the above description.
- the support ring 30 may be fixedly installed at the open lower portion of the process chamber 10 and the open upper portion of the lower chamber 20, and has a support protrusion 35 protruding from the inner circumferential surface.
- the grip plate 44 is disposed above the support protrusion 35 and is supported by the support protrusion 35 to block the loading space 22 and the process space 16.
- the holder 45 is vertically connected to the lower surface of the grip plate 44, and preferably, a plurality of holders 45 are disposed at predetermined positions in order to easily support the substrate W transferred by the end effector (65 in FIG. 5). Can be.
- the holder 45 is connected to the lower end of the vertical rod 47 and the vertical rod 47 vertically connected to the lower surface of the grip plate 44, respectively, to transfer the substrate W transferred by the end effector (65 of FIG. 5). It may be provided with a substrate support tip 49 for supporting.
- the substrate support tip 49 may have a shape protruding toward the center of the substrate W in order to easily support the inserted substrate W.
- the upper boat 41 has a plurality of boat frames 60 that are standing up in a columnar shape.
- a front open portion 61 is formed between the boat frame 60 for withdrawal and withdrawal of the substrate W through the end effector 65 of FIG. 5.
- the front open part 61 is arranged in a semicircular circumference with respect to the working path of the end effector (65 of FIG. 5) moving in a plane to form the front open part 61.
- the susceptor support tip 62 of FIG. 5 is spaced apart along the longitudinal direction of the boat frame 60, and the susceptor 55 is placed and supported on top of the susceptor support tip 62 of FIG. 5.
- the susceptor 55 may have a shape corresponding to the substrate W, and an insertion hole 57 into which the holder 45 may be inserted may be formed at an edge thereof.
- the susceptor 55 has a mounting groove 59 in which the substrate W is placed so that the rear surface of the substrate W may be in close contact with each other, and the outer circumferential surface of the substrate W is loaded in the mounting groove 59. Therefore, the formation of the film on the side and the back side of the substrate W can be prevented by blocking the inflow of process gas into the outer circumferential surface of the substrate W as well as the back side of the substrate W.
- the upper blocking plate 50 may be connected to an upper portion of the boat frame 60, and the upper blocking plate 50 may have a shape corresponding to the substrate W.
- the cross-sectional area of the upper blocking plate 50 may be smaller than that of the grip plate 44, and may be larger than that of the susceptor 55.
- Through-holes 52 are formed on the inner surface of the upper blocking plate 50, and the holder 45 is insertable into the through-holes 52.
- a lower blocking plate (not shown) may be installed at a lower portion of the boat frame 60, and a lower boat 43 may be connected to a lower portion of the lower blocking plate.
- the lower boat 43 may be provided in a state in which a plurality of insulating plates 67 are stacked in the vertical direction.
- FIG. 5 to 8 are views illustrating a process in which a substrate is loaded into a susceptor.
- the end effector 65 transfers the substrate W through the passage 3 of the lower chamber 20.
- the substrate W placed on the end effector 65 is transferred to the front open part 61 of the boat 41 through the lower chamber 20.
- a pitch D between the upper blocking plate 50 and the susceptor 55 disposed at the top and the susceptors 55 sequentially stacked from the susceptor disposed at the top is an end effector 65.
- the upper boat 41 can be lifted at a predetermined interval by a lifting unit (not shown) connected to the lower portion of the boat unit 40.
- the substrate support tip 49 penetrates the through hole 52 of the upper blocking plate 50 as the boat 41 ascends, thereby setting a predetermined distance from the upper portion of the susceptor 55. D 2 ) spaced apart.
- the end effector 65 is introduced between the upper blocking plate 50 and the substrate support tip 49 (D 1 ), and as shown in FIG. 6, the substrate W is lowered as the end effector 65 descends. Seated on the substrate support tip 49, the end effector 65 is disposed between the susceptor 55 and the substrate support tip 49 (D 2 ).
- the end effector 65 is drawn out from the front opening 61 of the boat 41.
- the boat 41 is raised to a predetermined height so that the substrate W is susceptor ( 55 is loaded on the seating groove 59.
- the substrate support tip 49 may maintain a predetermined distance D 1 between the susceptor 55 installed at the top and the susceptor 55 disposed at the bottom thereof by the rising of the boat.
- FIGS. 9 to 11 are views illustrating a process in which the boat unit is switched to the process position.
- the holder 45 opens the through hole 52 of the upper blocking plate 50 and the insertion hole 57 of the susceptor 55 as the boat unit 40 moves up and down. Can go through. Therefore, the holder 45 supports the substrate W guided from the end effector 65 and can easily load the substrate W into the susceptor 55 again. In other words, the substrate W is seated on the substrate support tip 49 from the end effector 65 and sequentially loaded from the substrate support tip 49 to the susceptor 55.
- the upper blocking plate 50 and the grip plate 44 abut.
- the upper blocking plate 50 supports the grip plate 44 and rises together, and the boat 41 is switched to the process position to process the substrate W.
- the upper surface of the upper blocking plate 50 may have a guide groove 51
- the lower surface of the grip plate 44 may be provided with a guide protrusion (not shown) of the shape corresponding to the guide groove 51. . Therefore, as the boat 41 is raised, the guide protrusion may be stably connected and ascended in the state of being fitted into the guide groove 51.
- the substrate processing apparatus 100 may prevent the process gas from flowing into the rear surface of the substrate by loading the substrate W on the susceptor 55.
- the process is performed on the substrate W while the substrate W is loaded in the seating groove 59 formed on the susceptor 55, the process film is formed on the rear and side surfaces of the substrate W. FIG. It can be minimized.
- the substrate W when the substrate W is subjected to heat treatment on the substrate W while the substrate W is loaded on the susceptor 55, the substrate W may be in contact with the susceptor 55 through the susceptor 55. Since the heat transfer can be made, it is possible to improve the temperature uniformity of the substrate (W).
- the substrate (W) can be in contact with the local temperature may be lowered. Therefore, the present substrate processing apparatus 100 can improve the yield of the substrate W and increase the productivity of the substrate W.
- the present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.
Abstract
Description
Claims (9)
- 기판이 적재되는 적재공간 및 상기 기판에 대한 공정이 이루어지는 공정공간을 제공하는 챔버;상하방향을 따라 기립 배치된 하나 이상의 보트프레임을 구비하며, 승강을 통해 상기 적재공간 및 상기 공정공간으로 이동가능한 보트;상기 보트프레임 상에 설치되어 상기 보트프레임의 길이방향을 따라 이격배치되며, 상기 보트가 상기 공정공간으로 이동함에 따라 상기 기판이 상부면에 순차적으로 놓여지는 복수의 서셉터들;상기 보트프레임과 나란하게 배치되는 수직로드 및 상기 수직로드의 내측면으로부터 돌출되어 상기 기판을 지지하는 기판지지팁을 구비하며, 상기 수직로드는 상기 보트가 상기 공정공간으로 이동시 상기 보트프레임의 길이방향을 따라 상대적으로 이동하는 하나 이상의 홀더를 포함하는, 기판처리장치.
- 제1항에 있어서,상기 챔버는 상기 적재공간과 상기 공정공간 사이에 형성된 연결공간을 가지며,상기 기판처리장치는 상기 연결공간 상에 배치되어 상기 적재공간과 상기 공정공간을 차단하며, 상기 수직로드의 상단에 연결되어 상기 보트가 상기 적재공간으로부터 상기 공정공간으로 이동시 상기 보트와 함께 상기 공정공간으로 이동하는 그립플레이트를 더 포함하는, 기판처리장치.
- 제1항에 있어서,상기 챔버는,상부가 개방되며, 일측에 형성되어 상기 기판이 출입하는 통로 및 상기 적재공간을 가지는 하부챔버; 및상기 하부챔버의 상부에 설치되어 상기 하부챔버의 개방된 상부와 연통되는 개방된 하부를 가지며, 상기 공정공간을 제공하는 상부챔버를 구비하는, 기판처리장치.
- 제2항에 있어서,상기 기판처리장치는 상기 연결공간에 설치되며, 내부면으로부터 돌출되어 상부에 놓여진 상기 그립플레이트를 지지하는 지지돌기를 가지는 지지링을 더 포함하는, 기판처리장치.
- 제1항에 있어서,상기 홀더는 상기 보트가 상기 공정공간으로 이동시 상기 서셉터에 형성된 삽입홀을 통해 상대적으로 이동하는, 기판처리장치.
- 제1항에 있어서,상기 서셉터는 상부면으로부터 함몰되어 상기 기판과 대응되는 형상을 가지며, 상기 기판이 놓여지는 안착홈을 가지는, 기판처리장치.
- 제1항에 있어서,상기 기판처리장치는,상기 보트프레임의 상부에 연결되며, 상기 보트가 상기 공정공간으로 이동시 상기 그립플레이트를 들어올리는 상부차단플레이트를 더 포함하는, 기판처리장치.
- 제7항에 있어서,상기 상부차단플레이트는 상기 홀더와 대응되는 위치에 형성된 관통홀을 가지며,상기 홀더는 상기 보트가 상기 공정공간으로 이동시 상기 관통홀을 통해 이동가능한, 기판처리장치.
- 제1항에 있어서,상기 보트프레임은 내측면으로부터 돌출되어 상기 서셉터를 지지하며, 상기 보트프레임의 길이방향을 따라 이격배치되는 서셉터지지팁을 구비하는, 기판처리장치.
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US14/766,299 US9368380B2 (en) | 2013-04-08 | 2014-02-17 | Substrate processing device with connection space |
JP2015561262A JP6062075B2 (ja) | 2013-04-08 | 2014-02-17 | 基板処理装置 |
CN201480008450.3A CN104981898B (zh) | 2013-04-08 | 2014-02-17 | 基板处理装置 |
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KR1020130038077A KR101390474B1 (ko) | 2013-04-08 | 2013-04-08 | 기판처리장치 |
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JP (1) | JP6062075B2 (ko) |
KR (1) | KR101390474B1 (ko) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017098534A (ja) * | 2015-11-17 | 2017-06-01 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置及びこれを用いた基板処理方法 |
US11789364B2 (en) | 2020-12-30 | 2023-10-17 | Semes Co., Ltd. | Apparatus for treating substrate and method for treating substrate |
Families Citing this family (223)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
KR101364701B1 (ko) * | 2011-11-17 | 2014-02-20 | 주식회사 유진테크 | 위상차를 갖는 반응가스를 공급하는 기판 처리 장치 |
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
KR20130107001A (ko) * | 2012-03-21 | 2013-10-01 | 엘지이노텍 주식회사 | 증착 장치 |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
WO2016118285A1 (en) * | 2015-01-23 | 2016-07-28 | Applied Materials, Inc. | New susceptor design to eliminate deposition valleys in the wafer |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
KR101760316B1 (ko) * | 2015-09-11 | 2017-07-21 | 주식회사 유진테크 | 기판처리장치 |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
KR101731488B1 (ko) * | 2015-10-27 | 2017-05-02 | 주식회사 유진테크 | 기판처리장치 및 튜브 조립체 조립방법 |
US9946028B2 (en) * | 2015-12-18 | 2018-04-17 | Finisar Corporation | Wafer assembly including a guide pin wafer |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
CN107871681B (zh) * | 2016-09-27 | 2019-10-08 | 北京北方华创微电子装备有限公司 | 一种去气腔室和半导体处理装置 |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
KR101905822B1 (ko) * | 2017-03-21 | 2018-10-08 | 주식회사 유진테크 | 기판 처리장치 |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
TWI655313B (zh) * | 2017-11-22 | 2019-04-01 | 台灣積體電路製造股份有限公司 | 半導體晶圓加工系統及加工半導體晶圓的方法 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR20200108016A (ko) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10720353B2 (en) * | 2018-07-04 | 2020-07-21 | Murata Machinery, Ltd. | Opener apparatus |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20210127738A (ko) * | 2019-03-19 | 2021-10-22 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
CN110828365A (zh) * | 2019-11-19 | 2020-02-21 | 全球能源互联网研究院有限公司 | 退火组件及退火方法 |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210089077A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템 |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
KR20050060161A (ko) * | 2003-12-15 | 2005-06-22 | 주식회사 테라세미콘 | 반도체 제조장치 및 이를 이용한 반도체기판 박막형성공법 |
JP2006303512A (ja) * | 2006-04-27 | 2006-11-02 | Hitachi Kokusai Electric Inc | 半導体製造装置及び半導体製造方法及びボート |
KR20110113043A (ko) * | 2010-04-08 | 2011-10-14 | 국제엘렉트릭코리아 주식회사 | 서셉터 및 그것을 구비한 종형 기판 처리 설비 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1098001A (ja) * | 1996-09-20 | 1998-04-14 | Nec Yamagata Ltd | ウェハ加熱炉 |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6167837B1 (en) | 1998-01-15 | 2001-01-02 | Torrex Equipment Corp. | Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor |
US6352594B2 (en) * | 1997-08-11 | 2002-03-05 | Torrex | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US6780464B2 (en) | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
US20050188923A1 (en) * | 1997-08-11 | 2005-09-01 | Cook Robert C. | Substrate carrier for parallel wafer processing reactor |
US6235652B1 (en) | 1997-08-11 | 2001-05-22 | Torrex Equipment Corporation | High rate silicon dioxide deposition at low pressures |
US7393561B2 (en) | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
US6352593B1 (en) | 1997-08-11 | 2002-03-05 | Torrex Equipment Corp. | Mini-batch process chamber |
US6287635B1 (en) | 1997-08-11 | 2001-09-11 | Torrex Equipment Corp. | High rate silicon deposition method at low pressures |
KR100491161B1 (ko) * | 2002-11-26 | 2005-05-24 | 주식회사 테라세미콘 | 반도체 제조장치 |
KR100549273B1 (ko) * | 2004-01-15 | 2006-02-03 | 주식회사 테라세미콘 | 반도체 제조장치의 기판홀더 |
EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
US7921803B2 (en) * | 2007-09-21 | 2011-04-12 | Applied Materials, Inc. | Chamber components with increased pyrometry visibility |
JP2012195565A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
JP5724713B2 (ja) * | 2011-07-22 | 2015-05-27 | 東京エレクトロン株式会社 | 熱処理装置 |
-
2013
- 2013-04-08 KR KR1020130038077A patent/KR101390474B1/ko active IP Right Grant
-
2014
- 2014-02-17 CN CN201480008450.3A patent/CN104981898B/zh active Active
- 2014-02-17 JP JP2015561262A patent/JP6062075B2/ja active Active
- 2014-02-17 WO PCT/KR2014/001258 patent/WO2014168331A1/ko active Application Filing
- 2014-02-17 US US14/766,299 patent/US9368380B2/en active Active
- 2014-04-07 TW TW103112668A patent/TWI534900B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
KR20050060161A (ko) * | 2003-12-15 | 2005-06-22 | 주식회사 테라세미콘 | 반도체 제조장치 및 이를 이용한 반도체기판 박막형성공법 |
JP2006303512A (ja) * | 2006-04-27 | 2006-11-02 | Hitachi Kokusai Electric Inc | 半導体製造装置及び半導体製造方法及びボート |
KR20110113043A (ko) * | 2010-04-08 | 2011-10-14 | 국제엘렉트릭코리아 주식회사 | 서셉터 및 그것을 구비한 종형 기판 처리 설비 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017098534A (ja) * | 2015-11-17 | 2017-06-01 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置及びこれを用いた基板処理方法 |
US10793949B2 (en) | 2015-11-17 | 2020-10-06 | Eugene Technology Co., Ltd. | Substrate processing apparatus and substrate processing method using the same |
US11789364B2 (en) | 2020-12-30 | 2023-10-17 | Semes Co., Ltd. | Apparatus for treating substrate and method for treating substrate |
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JP2016516293A (ja) | 2016-06-02 |
US20160013086A1 (en) | 2016-01-14 |
CN104981898B (zh) | 2017-07-28 |
JP6062075B2 (ja) | 2017-01-18 |
US9368380B2 (en) | 2016-06-14 |
TWI534900B (zh) | 2016-05-21 |
CN104981898A (zh) | 2015-10-14 |
KR101390474B1 (ko) | 2014-05-07 |
TW201443998A (zh) | 2014-11-16 |
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