CN104981898A - 基板处理装置 - Google Patents
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Abstract
根据本发明的一个实施例,一种基板处理装置包括:设置有堆叠空间和处理空间的腔室,在堆叠空间中基板被堆叠,在处理空间中执行对基板的处理;晶舟,其包括沿上下方向布置的至少一个直立的晶舟框架,晶舟会升降而移动至堆叠空间和处理空间中;多个承载座,其布置在所述晶舟框架上并沿着晶舟框架的纵向方向彼此间隔开,其中随着晶舟移动至处理空间中被依次加载至基板的顶面上;以及至少一个保持件,所述保持件包括与所述晶舟框架平行布置的竖直杆以及从所述竖直杆的内表面伸出以支撑所述基板的基板支撑末端,当所述晶舟移动至所述处理空间中时,所述竖直杆沿着所述晶舟框架的纵向方向相对移动。
Description
技术领域
这里公开的本发明涉及一种基板处理装置,更具体地涉及一种防止由于处理气体而在基板的后表面上形成处理膜的批量型基板处理装置。
背景技术
用于制造半导体、平板显示器、光伏电池等的基板处理装置(热处理装置)可以是执行基本热处理过程以使在诸如硅片或玻璃基板的基板上沉积的预定薄膜结晶化及相变的装置。一般来说,在制造液晶显示器或薄膜结晶硅光伏电池的情况下,有硅结晶装置用于将基板上沉积的非晶硅结晶成多晶硅。
为了执行上述结晶化处理(热处理过程),需要能够对形成有预定薄膜的基板加热的热处理装置。例如,使非晶硅结晶所需的最低温度为约550℃至约600℃。这里,热处理可以指的是以期望的温度即约350℃至约1300℃的温度加热物体或基板的处理。半导体基板上的热处理可例如包括加热处理、退火、掺杂材料的扩散或驱使、化学沉积(即材料层的沉积或生长,例如化学气相沉积)以及材料的蚀刻或移除。
一般来说,基板处理装置可分为在一个基板上执行热处理的单晶片型基板处理装置和在多个基板上执行热处理的批量型基板处理装置。单晶片型基板处理装置的优点在于其结构简单。但是,单晶片型基板处理装置的生产率会下降。由此,批量型基板处理装置就受到重视。
批量型基板处理装置包括基板加载晶舟(boat),该基板加载晶舟用于将多个基板加载至腔室中以改善过程处理性能。在批量型基板处理装置中,由于基板的边缘在处理期间会局部安装在沟槽内,因此在薄膜形成处理期间会在支撑半导体基板的两个表面和下部的晶舟或沟槽上形成用于半导体处理的膜。
由此,当在完成用于制造半导体的薄膜形成处理之后卸载基板时,一体连接至基板和沟槽的膜会破裂。由此,当膜破裂时,可能产生颗粒,并且基板的后表面上的机械应力会大幅提高而导致基板弯曲。此外,由于半导体基板的后表面上的膜均匀度大幅低于前表面上的均匀度,因此在后续处理尤其是在光刻处理中会导致许多问题。
发明内容
技术问题
本发明提供了一种基板处理装置,该基板处理装置防止在基板的后表面上形成处理膜。
参阅如下的详细说明以及附图将可了解本发明的其它目的。
技术方案
本发明的实施方式提供了基板处理装置,该基板处理装置包括:腔室,所述腔室设置有堆叠空间和处理空间,在所述堆叠空间中基板被堆叠,并且在所述处理空间中执行与所述基板相关的处理;晶舟,所述晶舟包括至少一个竖直直立的晶舟框架,所述晶舟会升降而移动至所述堆叠空间和所述处理空间中;多个承载座(susceptor),所述多个承载座布置在所述晶舟框架上并且沿着所述晶舟框架的纵向方向彼此间隔开,其中随着所述晶舟移动至所述处理空间中,所述基板被相继加载至所述多个承载座中的每个承载座的顶面上;以及至少一个保持件,所述保持件包括与所述晶舟框架平行布置的竖直杆以及从所述竖直杆的内表面伸出以支撑所述基板的基板支撑末端,其中当所述晶舟移动至所述处理空间中时,所述竖直杆沿着所述晶舟框架的纵向方向相对移动。
在一些实施方式中,所述腔室可以具有位于所述堆叠空间与所述处理空间之间的连接空间,并且所述基板处理装置可以进一步包括夹持板,所述夹持板布置在所述连接空间中以阻隔所述堆叠空间和所述处理空间,所述夹持板连接至所述竖直杆的上端,以当所述晶舟从所述堆叠空间移动至所述处理空间中时,与所述晶舟一起移动至所述处理空间中。
在其它实施方式中,所述腔室可以包括:下腔室,所述下腔室具有敞开的上部以及限定在所述腔室的一侧中以供所述基板进出的通道,所述下腔室提供所述堆叠空间;以及上腔室,所述上腔室布置在所述下腔室上,并且具有与所述下腔室的敞开的上部连通的敞开的下部,所述上腔室提供所述处理空间。
在又一些实施方式中,所述基板处理装置可以进一步包括布置在所述连接空间中的支撑环,所述支撑环包括从该支撑环的内表面伸出的支撑突起以支撑放置在该支撑突起上的所述夹持板。
在另一些实施方式中,当所述晶舟移动至所述处理空间中时,所述保持件可以相对移动通过限定在所述承载座中的插入孔。
在再一些实施方式中,所述承载座可以具有座置槽,所述座置槽从所述承载座的顶面下凹并具有与所述基板的形状对应的形状,其中所述基板可以座置在所述座置槽中。
在再一些实施方式中,所述基板处理装置可以进一步包括上阻挡板,所述上阻挡板连接至所述晶舟框架的上部以在所述晶舟移动至所述处理空间中时抬起所述夹持板。
在再一些实施方式中,所述上阻挡板可以具有贯穿孔,所述贯穿孔限定在与所述保持件的位置对应的位置,并且当所述晶舟移动至所述处理空间中时,所述保持件可移动通过所述贯穿孔。
在再一些实施方式中,所述晶舟框架可以包括承载座支撑末端,所述承载座支撑末端从所述晶舟框架的内表面伸出以支撑所述承载座,所述承载座支撑末端沿着所述晶舟框架的纵向方向彼此间隔开。
有益效果
根据本发明的实施方式,可以防止由于将基板加载到承载座上而在基板的后表面上形成处理膜。由此,可以提高基板的产量,以提高基板的生产率。
附图说明
图1是根据本发明的实施方式的基板处理装置的示意图;
图2是其中图1的晶舟被切换至处理位置的状态的图;
图3是图1的晶舟单元的立体图;
图4是图3的承载座的图;
图5至图8是将基板加载到承载座上的处理的图;以及
图9至图11是将晶舟单元切换至处理位置的处理的图。
具体实施方式
下面将参照图1至图11详细地描述本发明的示例性实施方式。但是,本发明可以以不同的形式被实施而不应被理解为限于这里所提出的实施方式。相反,提供这些实施方式以使得本公开全面且完整,并且向本领域技术人员充分地传达本发明的范围。在附图中,为了清楚起见放大了层和区域的厚度。
本领域技术人员明了的是,除了当前实施方式所述的基板W以外,本发明的实施方式也适用于要处理的各种物体。例如,本发明并不限制要处理的基板的类型。由此,基板由在整个半导体制造过程中通常使用的各种材料形成,例如玻璃、塑料、聚合物、硅片、不锈钢、蓝宝石材料等。而且,基板的处理可以理解为预定或形成在基板上的图案的处理以及基板本身的处理。
而且,本发明并不限制基板处理装置的使用。由此,整个半导体处理,例如沉积处理、蚀刻处理、表面处理过程等都可使用根据本发明的基板处理装置来执行。此外,下面将只描述本发明的主要构件。而且明显的是,根据用途,本发明的基板处理装置可以额外设置各种构件。
图1是根据本发明的实施方式的基板处理装置的示意图,图2是其中图1的晶舟被切换至处理位置的状态的图。参照图1和图2,基板处理装置100包括:具有敞开上部的下腔室20;以及将下腔室20的敞开上部封闭的处理腔室10,以提供在其中执行与基板W相关的处理的处理空间12。支撑环30可布置在处理腔室10的敞开下部以及下腔室20的敞开上部上(即,连接空间)。支撑环30可包括从其内周表面突出的支撑突起35。
下腔室20可以具有供传送基板W的通道3。由此,基板W可通过通道3被传送至下腔室20中。例如,下腔室20的通道3可连接至传送腔室(未示出),该传送腔室连接至多个处理腔室。由此,可通过末端执行器(请参见图5的附图标记65)将基板W从传送腔室传送至下腔室20中。在通道3的外侧可以布置有闸阀4,并且可通过闸阀4来打开或关闭通道3。
在基板处理设备100内布置有晶舟41,在该晶舟上堆叠有将通过通道3传送的多个基板W。在晶舟41定位在设于下腔室20中的堆叠空间22(或位于“堆叠位置”)时,基板W可堆叠在晶舟41中。晶舟41可包括其上堆叠有基板的上晶舟42,以及连接至上晶舟42的下部以支撑上晶舟42的下晶舟43。当晶舟被切换至处理位置时,可在下晶舟43上布置多个绝缘板67,以使处理腔室10内通过处理腔室10的敞开下部损失的热最少。
如下面将描述的,晶舟单元40可包括:上晶舟42,该上晶舟包括堆叠有基板W的承载座55;包括绝缘板67的下晶舟43;用于将基板W加载至承载座55的夹持板44;保持件45;以及上阻挡板50。在承载座55中,基板W可放在沿晶舟41的内部方向平行地伸出的承载座支撑末端(请参见图5的附图标记62)(或沟槽)上。如下面将描述的,随着晶舟41上升,基板W可相继竖直地堆叠在放置于下一个承载座支撑末端(请参见图5的附图标记62)的承载座55上。基板W可堆叠在承载座55上,并且晶舟41可移入内部反应管14(或“处理位置”),以执行与基板W相关的处理。
而且,在下晶舟43的下方可布置有基座板69。基座板69可与晶舟41一起升降。当晶舟41切换至处理位置时,基座板69可关闭处理空间16。各绝缘板67和基座板69均可由陶瓷、石英或涂有陶瓷的金属形成。在执行处理时,可使反应区内传递至堆叠空间22中的热最少。
马达外壳70布置在基座板69的下方。旋转轴72的一侧连接至下晶舟43。用于使旋转轴72旋转的旋转马达(未示出)可固定至马达外壳70的内部。当晶舟41切换至处理位置以执行与基板W相关的处理时,旋转马达可驱动旋转轴72以使晶舟41与旋转轴72一起旋转。
马达外壳70固定至托架74,并且托架74沿着连接至下腔室20的升降杆76升降。托架74螺纹联接至升降杆76。升降杆76可连接至升降马达77,以通过升降杆76的旋转来升降托架74。也就是说,升降杆76可以随着升降马达77的旋转而旋转。由此,托架74和马达外壳70可彼此一起升降。
处理腔室10具有内部空间12,在该内部空间中执行与基板W相关的处理。内部反应管14布置在内部空间12中。内部反应管14提供处理空间16,在该处理空间中执行与基板W相关的处理。内部反应管14将处理腔室10的内部分隔成内部空间12和处理空间16。也就是说,如图2所示,当晶舟41上升至处理空间16中并且被切换至处理位置时,可在处理空间16相对于基板W而言最小的状态下执行处理。
基板处理装置100包括用于加热基板W的加热器(未示出)。例如,可以在处理腔室10的上部中或沿着处理腔室10的侧壁设置加热器。而且,基板处理装置100可包括多个用于将处理气体供应至处理空间16中的供应喷嘴82以及排放喷嘴84。供应喷嘴82连接至布置在处理腔室10的一侧上的气体供应管线80,以接收来自外部的处理气体。
处理气体可被供应至基板W上,或通过分别限定在供应喷嘴82和排放喷嘴84中的供应孔和排气孔(未示出)被排出。供应孔和排气孔可被限定在彼此不同的高度处。供应喷嘴和供应孔可布置在处理空间16中,以将反应气体供应到堆叠的基板W上。而且,各排放喷嘴84可布置在与各供应喷嘴82相对的侧上,以将在处理期间产生的未反应气体和反应副产物排放至外部。
排放喷嘴84连接至第一输出管线85。通过排放喷嘴84抽吸的未反应气体和反应副产物通过第一输出管线85被排出。输出阀(未示出)可布置在第一输出管线85中,以打开或关闭第一输出管线85。而且,涡轮泵86可布置在第一输出管线85上,以强制排出未反应气体和反应副产物。而且,下腔室20可连接至第二输出管线88,以通过第二输出管线88排空堆叠空间22的内部。
如上所述,基板处理装置100可包括用于加载多个基板W的晶舟41,以改善过程处理性能。如果通过使用现有的晶舟单元40执行与基板W相关的处理,则放置在晶舟41的沟槽上的基板W的边缘可被局部安装。例如,当通过使用处理气体在基板W上形成处理膜时,可在支撑半导体基板的两个表面和下部的所有晶舟41以及沟槽上形成用于处理的膜。
由此,当在完成用于制造半导体的膜形成处理之后卸载基板W时,一体连接至基板W和沟槽的膜会破裂。由此,当膜破裂时,可能产生颗粒,并且基板W的后表面上的机械应力会大幅增加,而导致基板W弯曲。此外,由于基板W的后表面上的膜均匀度大幅低于前表面上的均匀度,因此在后续处理尤其是光刻处理中会导致许多问题。
也就是说,在根据本发明的基板处理装置100中,基板W可被加载至承载座55上以阻挡处理气体引入基板W的后表面上,从而防止在基板W的后表面上形成膜。下面将参照附图对用于防止在基板W的后表面上形成膜的晶舟单元40进行描述。
图3是图1的晶舟单元的立体图,图4是图3的承载座的图。参照图3和图4,晶舟单元40包括上晶舟42和下晶舟43。上晶舟42可包括:承载座55,承载座55放置在柱状晶舟框架60的承载座支撑末端(请参见图5的附图标记62)上;以及上阻挡板50,该上阻挡板连接至晶舟框架60的上部。如上所述,在下晶舟43上可布置有绝缘板67。而且,晶舟单元40可进一步包括夹持板44和保持件45。在以下,省略的构造和操作可由之前所述的内容取代。
如上所述,支撑环30可固定至处理腔室10的敞开下部以及下腔室的敞开上部。支撑环30包括从其内周表面伸出的支撑突起35。夹持板44布置在支撑突起35上。而且,夹持板44可由支撑突起35支撑,以阻隔堆叠空间22和处理空间16。保持件45竖直连接至夹持板44的底面。保持件45可设置在多个预设位置上,以轻松支撑由末端执行器(请参见图5的附图标记65)传送的基板W。
保持件45可包括:竖直连接至夹持板44的底面的竖直杆47;以及基板支撑末端49,该基板支撑末端连接至竖直杆47的下端,以支撑由末端执行器(请参见图5的附图标记65)传送的基板W。基板支撑末端49可朝向基板W的中心伸出,以轻松支撑所加载的基板W。
上晶舟42可包括多个晶舟框架60,每个晶舟框架均成柱状直立。在晶舟框架60之间限定有供通过末端执行器(请参见图5的附图标记65)放入或送出基板W的前开口61。通过相对于沿着平面水平移动的末端执行器(请参见图5的附图标记65)的工作路径沿着半圆形布置晶舟框架60而形成前开口61。承载座支撑末端(请参见图5的附图标记62)可沿着晶舟框架60的纵向方向彼此间隔开,并且承载座55可放置并支撑在承载座支撑末端(请参见图5的附图标记62)的上部上。
承载座55可以具有与基板W的形状对应的形状。而且,在承载座55的边缘中可限定有插入孔57,保持件45可插入该插入孔57中。承载座55具有座置槽59,基板W座置在该座置槽上以紧密地附接基板W的后表面。基板W的外周表面被加载至座置槽59上。由此,可以防止处理气体流到基板W的后表面以及基板W的外周表面上,以防止在基板W的侧面和后表面上形成膜。
上阻挡板50可连接至晶舟框架60的上部。上阻挡板50可以具有与基板W的形状对应的形状。上阻挡板50的截面可以小于夹持板44的截面并大于承载座55的截面。贯穿孔52限定在上阻挡板50的内表面中。保持件45可插入贯穿孔52中。而且,在晶舟框架60的下方可布置有下阻挡板(未示出)。下晶舟43可连接至下阻挡板的下部。下晶舟43可以设置为处于其中堆叠了多个绝缘板67的状态。
图5至图8是将基板加载到承载座上的处理的图。如上所述,末端执行器65通过下腔室20的通道3传送基板W。放置在末端执行器65上的基板W通过下腔室20被传送至晶舟41的前开口61中。在上阻挡板50与最上承载座55之间以及在从最上承载座55向下相继堆叠的承载座55之间的相隔空间(间距)D可以被设置作为末端执行器65的工作空间。而且,可通过连接至晶舟单元40的下部的升降单元(未示出)将上晶舟42升降预设距离。
请参照图5,基板支撑末端49可以通过随着晶舟41上升时穿过上阻挡板50的贯穿孔52而布置成与承载座55的上部相隔预设距离D2。末端执行器65被插入到在上阻挡板50与基板支撑末端49之间的空间D1中。请参照图6,随着末端执行器65下降,基板W可座置在基板支撑末端49上,并且末端执行器65可布置在承载座55与基板支撑末端49之间的空间D2中。
请参照图7,在基板W座置在基板支撑末端49上之后,可从晶舟41的前开口61取出末端执行器65。请参照图8,当从晶舟41的前开口61完全取出末端执行器65时,晶舟41可向上升至预设高度,以将基板W加载至承载座55的座置槽59上。基板支撑末端49可保持通过晶舟41的上升而布置的最上承载座55与布置在最上承载座55紧下方的承载座55之间的预设距离D1。可相继重复图5至图8中所示的处理,以将基板W加载至各堆叠的承载座55上。
图9至图11是将晶舟单元切换至处理位置的处理的图。请参照图9至图11,随着晶舟单元40升降,保持件45可移动通过上阻挡板50的贯穿孔52以及承载座55的插入孔57。由此,保持件45可支撑从末端执行器65引导的基板W,以轻松地再次将基板W加载至承载座55上。也就是说,基板W可从末端执行器65座置在基板支撑末端49上,并且从基板支撑末端49依次加载至承载座55上。
当基板W从最上承载座55加载至最下承载座55时,上阻挡板50和夹持板44彼此接触。随着晶舟41上升,上阻挡板50可支撑夹持板44,以随夹持板44一起上升。晶舟41可切换至处理位置以执行与基板W相关的处理。在上阻挡板50的顶面中可限定有引导槽51。在夹持板44的底面上可布置有引导突起(未示出),该引导突起具有与引导槽51的形状对应的形状。由此,随着晶舟41上升,引导突起和引导槽51可彼此稳定地连接,以在引导突起插入引导槽51中的状态下上升。
也就是说,根据本发明的基板处理装置,基板W可加载至承载座55上,以防止处理气体引入基板W的后表面上。而且,当在基板W被加载至限定在承载座55中的座置槽59上的状态下执行与基板W相关的处理时,可使基板W的后表面和侧面上的膜形成最少化。此外,当在基板W被加载至承载座55上的状态下执行与基板W相关的热处理时,由于在基板W的前表面接触承载座55的状态下基板W的热通过承载座55被传递,因此可改善基板W的温度均匀性。另一方面,当基板W被加载至沟槽上时,基板W可局部接触承载座而使基板W的温度均匀性劣化。由此,根据本发明的基板处理装置100可改善基板W的产量和生产率。
尽管参照示例性实施方式详细地描述了本发明,但是本发明可以以许多不同的形式被实施。由此,下面阐述的权利要求的技术思想和范围不限于优选实施方式。
工业实用性
本发明可应用于各种半导体制造装置或各种半导体制造方法。
Claims (9)
1.一种基板处理装置,该基板处理装置包括:
腔室,所述腔室设置有堆叠空间和处理空间,在所述堆叠空间中基板被堆叠,并且在所述处理空间中执行与所述基板相关的处理;
晶舟,所述晶舟包括至少一个竖直直立的晶舟框架,所述晶舟会升降而移动至所述堆叠空间和所述处理空间中;
多个承载座,所述多个承载座布置在所述晶舟框架上并且沿着所述晶舟框架的纵向方向彼此间隔开,其中随着所述晶舟移动至所述处理空间中,所述基板被相继加载至所述多个承载座中的每个承载座的顶面上;以及
至少一个保持件,所述保持件包括与所述晶舟框架平行布置的竖直杆以及从所述竖直杆的内表面伸出以支撑所述基板的基板支撑末端,其中当所述晶舟移动至所述处理空间中时,所述竖直杆沿着所述晶舟框架的纵向方向相对移动。
2.根据权利要求1所述的基板处理装置,其中所述腔室具有位于所述堆叠空间与所述处理空间之间的连接空间,并且
所述基板处理装置进一步包括夹持板,所述夹持板布置在所述连接空间中以阻隔所述堆叠空间和所述处理空间,所述夹持板连接至所述竖直杆的上端,以当所述晶舟从所述堆叠空间移动至所述处理空间中时,与所述晶舟一起移动至所述处理空间中。
3.根据权利要求1或2所述的基板处理装置,其中所述腔室包括:
下腔室,所述下腔室具有敞开的上部以及限定在所述腔室的一侧中以供所述基板进出的通道,所述下腔室提供所述堆叠空间;以及
上腔室,所述上腔室布置在所述下腔室上,并且具有与所述下腔室的敞开的上部连通的敞开的下部,所述上腔室提供所述处理空间。
4.根据权利要求2所述的基板处理装置,所述基板处理装置进一步包括布置在所述连接空间中的支撑环,所述支撑环包括从该支撑环的内表面伸出的支撑突起以支撑放置在该支撑突起上的所述夹持板。
5.根据权利要求1所述的基板处理装置,其中当所述晶舟移动至所述处理空间中时,所述保持件相对移动通过限定在所述承载座中的插入孔。
6.根据权利要求1所述的基板处理装置,其中所述承载座具有座置槽,所述座置槽从所述承载座的顶面下凹并具有与所述基板的形状对应的形状,
其中所述基板座置在所述座置槽中。
7.根据权利要求1所述的基板处理装置,所述基板处理装置进一步包括上阻挡板,所述上阻挡板连接至所述晶舟框架的上部以在所述晶舟移动至所述处理空间中时抬起所述夹持板。
8.根据权利要求7所述的基板处理装置,其中所述上阻挡板具有贯穿孔,所述贯穿孔限定在与所述保持件的位置对应的位置处,并且
当所述晶舟移动至所述处理空间中时,所述保持件能移动通过所述贯穿孔。
9.根据权利要求1所述的基板处理装置,其中所述晶舟框架包括承载座支撑末端,所述承载座支撑末端从所述晶舟框架的内表面伸出以支撑所述承载座,所述承载座支撑末端沿着所述晶舟框架的纵向方向彼此间隔开。
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CN106711065A (zh) * | 2015-11-17 | 2017-05-24 | 株式会社Eugene科技 | 衬底处理装置及使用所述衬底处理装置的衬底处理方法 |
CN106711065B (zh) * | 2015-11-17 | 2019-11-05 | 株式会社Eugene科技 | 衬底处理装置及使用所述衬底处理装置的衬底处理方法 |
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CN108630594A (zh) * | 2017-03-21 | 2018-10-09 | 株式会社Eugene科技 | 衬底处理设备 |
CN108630594B (zh) * | 2017-03-21 | 2023-01-24 | 株式会社Eugene科技 | 衬底处理设备 |
CN112335029A (zh) * | 2018-07-04 | 2021-02-05 | 村田机械株式会社 | 打开装置 |
CN112335029B (zh) * | 2018-07-04 | 2024-03-01 | 村田机械株式会社 | 打开装置 |
CN113206170A (zh) * | 2021-04-23 | 2021-08-03 | 青岛赛瑞达电子科技有限公司 | 一种应用于半导体、光伏管式设备闭管软着陆的方法 |
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WO2014168331A1 (ko) | 2014-10-16 |
TW201443998A (zh) | 2014-11-16 |
US9368380B2 (en) | 2016-06-14 |
TWI534900B (zh) | 2016-05-21 |
US20160013086A1 (en) | 2016-01-14 |
KR101390474B1 (ko) | 2014-05-07 |
CN104981898B (zh) | 2017-07-28 |
JP6062075B2 (ja) | 2017-01-18 |
JP2016516293A (ja) | 2016-06-02 |
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