WO2014157835A1 - 기판처리장치 - Google Patents
기판처리장치 Download PDFInfo
- Publication number
- WO2014157835A1 WO2014157835A1 PCT/KR2014/001257 KR2014001257W WO2014157835A1 WO 2014157835 A1 WO2014157835 A1 WO 2014157835A1 KR 2014001257 W KR2014001257 W KR 2014001257W WO 2014157835 A1 WO2014157835 A1 WO 2014157835A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- process chamber
- refrigerant
- processing apparatus
- substrate processing
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
Abstract
Description
Claims (5)
- 외부로부터 이송된 기판을 수용하는 내부공간을 가지며, 상기 내부공간에서 상기 기판에 대한 공정이 이루어지는 공정챔버;상기 공정챔버의 측벽을 따라 설치되며, 상기 내부공간의 둘레에 배치되어 상기 기판을 가열하는 열선히터;상기 열선히터 사이에 배치되어 상기 공정챔버의 측벽을 따라 설치되며, 외부로부터 공급된 냉매가 흐르는 냉각튜브를 포함하는 기판처리장치.
- 제1항에 있어서,상기 공정챔버는 상기 공정챔버의 일측에 형성되어 상기 냉각튜브가 인입되는 인입구를 가지며,상기 기판처리장치는,상기 인입구에 설치된 상기 냉각튜브에 연결되어 상기 냉매를 공급하는 공급라인을 더 포함하는 기판처리장치.
- 제2항에 있어서,상기 기판처리장치는,상기 내부공간에 설치되어 내부와 외부를 구획하며, 내부에 상기 기판에 대한 공정이 이루어지는 공정공간이 형성되는 내부반응튜브를 더 포함하되,상기 냉각튜브는 상기 내부반응튜브의 외부를 향해 냉매를 분사하는 복수개의 분사홀들을 가지는 기판처리장치.
- 제3항에 있어서,상기 기판처리장치는,상기 공정챔버의 상부에 형성된 배기홀과 연통되며, 상기 분사홀을 통해 분사되는 냉매를 외부로 배기하는 배기포트를 더 구비하는 기판처리장치.
- 제3항에 있어서,상기 분사홀은 상향경사지게 배치되는 기판처리장치.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480008290.2A CN105074884A (zh) | 2013-03-27 | 2014-02-17 | 基板处理装置 |
JP2015561261A JP2016516292A (ja) | 2013-03-27 | 2014-02-17 | 基板処理装置 |
US14/766,150 US20150380284A1 (en) | 2013-03-27 | 2014-02-17 | Apparatus for processing substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130032529A KR101392379B1 (ko) | 2013-03-27 | 2013-03-27 | 기판처리장치 |
KR10-2013-0032529 | 2013-03-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014157835A1 true WO2014157835A1 (ko) | 2014-10-02 |
Family
ID=50893317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2014/001257 WO2014157835A1 (ko) | 2013-03-27 | 2014-02-17 | 기판처리장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150380284A1 (ko) |
JP (1) | JP2016516292A (ko) |
KR (1) | KR101392379B1 (ko) |
CN (1) | CN105074884A (ko) |
TW (1) | TWI532967B (ko) |
WO (1) | WO2014157835A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101364701B1 (ko) * | 2011-11-17 | 2014-02-20 | 주식회사 유진테크 | 위상차를 갖는 반응가스를 공급하는 기판 처리 장치 |
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
KR101634686B1 (ko) * | 2014-12-24 | 2016-07-08 | 주식회사 선익시스템 | 노즐젯 헤드 모듈 및 그를 구비한 노즐젯 시스템 |
JP7149884B2 (ja) * | 2019-03-20 | 2022-10-07 | 東京エレクトロン株式会社 | 熱処理装置及び成膜方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050039059A (ko) * | 2003-10-23 | 2005-04-29 | 삼성전자주식회사 | 반도체 제조용 반응로 |
KR20050058842A (ko) * | 2003-12-12 | 2005-06-17 | 삼성전자주식회사 | 반도체 제조장치 |
KR20050116247A (ko) * | 2004-06-07 | 2005-12-12 | 조정희 | 퍼니스 장치 및 그 장치를 사용한 열처리 방법 |
KR20120073782A (ko) * | 2010-12-27 | 2012-07-05 | 국제엘렉트릭코리아 주식회사 | 질화갈륨계 엘이디 박막성장을 위한 화학기상증착장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6451619A (en) * | 1987-08-21 | 1989-02-27 | Dainippon Screen Mfg | Heat treatment equipment for substrate |
US5212118A (en) * | 1991-08-09 | 1993-05-18 | Saxena Arjun N | Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates |
JPH06216056A (ja) * | 1993-01-19 | 1994-08-05 | Kokusai Electric Co Ltd | 縦型炉 |
US6059567A (en) * | 1998-02-10 | 2000-05-09 | Silicon Valley Group, Inc. | Semiconductor thermal processor with recirculating heater exhaust cooling system |
JP4158386B2 (ja) * | 2002-02-28 | 2008-10-01 | 東京エレクトロン株式会社 | 冷却装置及びこれを用いた熱処理装置 |
US7846254B2 (en) * | 2003-05-16 | 2010-12-07 | Applied Materials, Inc. | Heat transfer assembly |
US7901509B2 (en) * | 2006-09-19 | 2011-03-08 | Momentive Performance Materials Inc. | Heating apparatus with enhanced thermal uniformity and method for making thereof |
JP4924395B2 (ja) * | 2007-12-07 | 2012-04-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
KR101094279B1 (ko) * | 2009-11-06 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 가열 수단 및 이를 포함하는 기판 가공 장치 |
KR200458852Y1 (ko) * | 2010-02-26 | 2012-03-15 | 주식회사 테라세미콘 | 기판 처리 장치 |
JP2012151433A (ja) * | 2010-12-28 | 2012-08-09 | Tokyo Electron Ltd | 熱処理装置 |
JP6013113B2 (ja) * | 2012-09-27 | 2016-10-25 | 東京エレクトロン株式会社 | 発熱体の製造方法 |
-
2013
- 2013-03-27 KR KR1020130032529A patent/KR101392379B1/ko active IP Right Grant
-
2014
- 2014-02-17 US US14/766,150 patent/US20150380284A1/en not_active Abandoned
- 2014-02-17 CN CN201480008290.2A patent/CN105074884A/zh active Pending
- 2014-02-17 WO PCT/KR2014/001257 patent/WO2014157835A1/ko active Application Filing
- 2014-02-17 JP JP2015561261A patent/JP2016516292A/ja active Pending
- 2014-03-27 TW TW103111418A patent/TWI532967B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050039059A (ko) * | 2003-10-23 | 2005-04-29 | 삼성전자주식회사 | 반도체 제조용 반응로 |
KR20050058842A (ko) * | 2003-12-12 | 2005-06-17 | 삼성전자주식회사 | 반도체 제조장치 |
KR20050116247A (ko) * | 2004-06-07 | 2005-12-12 | 조정희 | 퍼니스 장치 및 그 장치를 사용한 열처리 방법 |
KR20120073782A (ko) * | 2010-12-27 | 2012-07-05 | 국제엘렉트릭코리아 주식회사 | 질화갈륨계 엘이디 박막성장을 위한 화학기상증착장치 |
Also Published As
Publication number | Publication date |
---|---|
CN105074884A (zh) | 2015-11-18 |
TWI532967B (zh) | 2016-05-11 |
TW201441574A (zh) | 2014-11-01 |
US20150380284A1 (en) | 2015-12-31 |
JP2016516292A (ja) | 2016-06-02 |
KR101392379B1 (ko) | 2014-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2014168331A1 (ko) | 기판처리장치 | |
WO2015057023A1 (ko) | 기판 처리장치 | |
KR101018578B1 (ko) | 가열 장치, 도포, 현상 장치 및 가열 방법 | |
WO2011129492A1 (ko) | 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법 | |
WO2013147481A1 (ko) | 선택적 에피택셜 성장을 위한 장치 및 클러스터 설비 | |
WO2014157834A1 (ko) | 기판처리장치 | |
KR20010031111A (ko) | 기판 가열 및 냉각을 개선한 진공 프로세싱 시스템 | |
TW201603166A (zh) | 製程腔體上游預烘烤基板的裝置及方法 | |
WO2014157835A1 (ko) | 기판처리장치 | |
WO2011136604A2 (ko) | 기판 처리 장치 | |
WO2013191414A1 (ko) | 기판처리장치 | |
US20220075270A1 (en) | Bake unit and apparatus for treating substrate | |
WO2015072661A1 (ko) | 반응 유도 유닛 및 기판 처리 장치 그리고 박막 증착 방법 | |
WO2016167554A1 (ko) | 기판처리장치 | |
KR102205384B1 (ko) | 기판 처리 장치 및 기판의 냉각 방법 | |
JP6823575B2 (ja) | 基板処理装置、反応管及び半導体装置の製造方法 | |
WO2021206351A1 (ko) | 기판 처리 장치 및 방법 | |
JP4115331B2 (ja) | 基板処理装置 | |
KR101593493B1 (ko) | 대면적 유리기판 열처리 장치 | |
KR20160095698A (ko) | 발열체 및 히터 어셈블리 그리고 그것을 갖는 클러스터 설비 | |
JP2010153480A (ja) | 半導体装置の製造方法 | |
JP2018101741A (ja) | 基板処理装置及び基板処理方法 | |
KR100651631B1 (ko) | 박막증착의 균일도를 향상시킬 수 있는 rtcvd 챔버 | |
WO2016199980A1 (ko) | 개시제를 이용하는 화학기상증착시스템 | |
JP2001267262A (ja) | 半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201480008290.2 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14775096 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14766150 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2015561261 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14775096 Country of ref document: EP Kind code of ref document: A1 |