WO2014098174A1 - フリップチップボンダ及びボンディングステージの平坦度並びに変形量補正方法 - Google Patents
フリップチップボンダ及びボンディングステージの平坦度並びに変形量補正方法 Download PDFInfo
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- WO2014098174A1 WO2014098174A1 PCT/JP2013/084042 JP2013084042W WO2014098174A1 WO 2014098174 A1 WO2014098174 A1 WO 2014098174A1 JP 2013084042 W JP2013084042 W JP 2013084042W WO 2014098174 A1 WO2014098174 A1 WO 2014098174A1
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- bonding stage
- bonding
- flip chip
- chip bonder
- vertical position
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Definitions
- the present invention relates to a structure of a flip chip bonder, flatness of a bonding stage, and a deformation correction method.
- solder film is formed on the tip of the pillar formed by resist or the like on the electrode of the semiconductor chip
- the semiconductor chip is reversed, the solder film formed on the tip of the pillar is pressed against the electrode of the substrate, and heated.
- a flip chip bonding method in which solder is melted and a semiconductor chip is mounted on a substrate is often used.
- a flip chip bonder an apparatus for inverting a semiconductor chip and mounting it on a substrate.
- electronic components in which semiconductor chips are stacked are manufactured by bonding another semiconductor chip on a semiconductor chip on a wafer instead of a substrate by a flip chip bonding method.
- the bonding stage is heated together with the bonding tool in order to melt the solder.
- the bonding stage itself is distorted due to the temperature rise due to this heating, there is a problem in that, as described above, partial contact of the electrodes or pillars occurs and bonding quality deteriorates.
- the bonding stage is fixed on an XY table and moves in the XY direction at high speed during bonding. For this reason, as in the prior art described in Patent Document 1, the bonding stage moves at high speed in a support structure in which a spherical shaft is fitted in a V-shaped groove whose direction is shifted by 120 degrees. There is a problem that the high-speed bonding cannot be performed due to the fact that the bonding stage cannot be withstood and the bonding stage is out of position or the bonding stage vibrates.
- an object of the present invention is to improve the bonding quality and increase the speed in the flip chip bonder.
- the flip chip bonder according to the present invention includes a base portion, a bonding stage for fixing and fixing a bonding object, and a plurality of flip chip bonders provided on the surface of the bonding stage opposite to the surface for fixing and fixing the bonding object.
- connection member has a substantially trapezoidal shape in which the first side and the second side are parallel, and is adjacent to the first side and is a first flexible member along the first side.
- a second flexible portion adjacent to the second side and extending along the second side, and a rigid body portion between the first flexible portion and the second flexible portion.
- a leaf spring mechanism having a first side and a second side are preferably arranged between the base portion and the bonding stage so that the first side and the second side are parallel to the first axis or the second axis. It is.
- the first side of the leaf spring mechanism is shorter than the second side, and the first side of the leaf spring mechanism is the surface opposite to the surface of the bonding stage and the center of gravity of the bonding stage.
- the second side of the leaf spring mechanism is a surface facing the bonding stage of the base portion, opposite to the first position and the center of gravity. It is also preferable that it is attached to the second position shifted from the center of gravity by a second distance longer than the first distance.
- the flip chip bonder of the present invention includes a plurality of pressurizing springs that press the support points of the bonding stage onto the vertical position adjustment support mechanisms, and the vertical position adjustment support mechanisms are cam mechanisms that come into contact with the support points. It is also suitable as including.
- the flip chip bonder of the present invention includes a control unit that operates the vertical position adjustment support mechanism, and the control unit includes a flatness map indicating the flatness of each part of the bonding stage, and is based on the flatness map according to the bonding position. It is also preferable that a flatness correction means for correcting the height and inclination of the bonding stage is provided.
- the flip chip bonder of the present invention includes a control unit that operates the vertical position adjustment support mechanism, and the control unit is a deformation that indicates an expected deformation amount of each part of the bonding stage due to a pressing load when the bonding tool is pressed against the bonding stage. It is also preferable to include a deformation amount correction unit that includes an amount map and corrects the height and inclination of the bonding stage by the expected deformation amount of the bonding stage according to the pressing position and pressing load during bonding.
- the bonding stage includes a first layer having a low thermal conductivity, a second layer having a thermal conductivity larger than that of the first layer, and a thermal expansion coefficient substantially similar to that of the first layer.
- the bonding stage flatness correction method of the present invention is a flip-chip bonder bonding stage flatness correction method, which is attached to a base part, a bonding stage for adsorbing and fixing a bonding object, and the bonding stage bonding.
- a plurality of vertical position adjustment support mechanisms for supporting a plurality of support points provided on the surface opposite to the surface on which the object is sucked and fixed in the vertical direction and adjusting the vertical position of each support point, and a base body
- a flip chip bonder comprising a connecting member for connecting the bonding part and the bonding stage, and a control unit for operating the vertical position adjustment support mechanism, and a flatness map indicating the flatness of each part of the bonding stage in the control unit
- a plurality of vertical position adjustment support mechanisms by the control unit Is created, characterized in that it comprises a step of correcting the height and tilt of the bonding stage based on the flatness map according to the bonding position.
- the connecting member includes a direction of the first axis along the surface of the bonding stage and a direction of the second axis perpendicular to the first axis along the surface of the bonding stage.
- the bonding stage deformation correction method of the present invention is a flip chip bonder bonding stage deformation correction method, which is attached to a base part, a bonding stage for adsorbing and fixing a bonding object, and the bonding stage bonding.
- a plurality of vertical position adjustment support mechanisms for supporting a plurality of support points provided on the surface opposite to the surface on which the object is sucked and fixed in the vertical direction and adjusting the vertical position of each support point, and a base body
- a step of preparing a flip chip bonder comprising a connecting member for connecting the bonding portion and the bonding stage, and a control unit for operating the vertical position adjustment support mechanism, and a pressing load when the bonding tool is pressed against the bonding stage.
- the connecting member includes a first axis direction along the surface of the bonding stage, a second axis direction orthogonal to the first axis along the surface of the bonding stage, The relative movement of the bonding stage with respect to the base portion and the first twist about the first axis of the bonding stage relative to the base portion, the second twist about the second axis, and the bonding stage relative to the base portion It is also preferable to allow movement in the vertical direction.
- the present invention has the effect of improving the bonding quality and speeding up the flip chip bonder.
- the flip chip bonder 100 has a base 12 that is a base portion attached to the upper surface of an XY table 11 and a disk-like shape that adsorbs and fixes a bonding target such as a substrate or a wafer.
- a plurality of vertical position adjustment support mechanisms 30 that are attached to the bonding stage 20 and the base 12 and support the bonding stage 20 in the vertical direction and adjust the vertical position of the bonding stage 20, the base 12, and the bonding stage 20
- a pressurizing spring 50 that applies a pressurizing force that presses the bonding stage 20 against the vertical position adjustment support mechanism 30.
- FIG. 1 shows the flip chip bonder 100 with the bonding stage 20 removed.
- each vertical position adjustment support mechanism 30 is arranged so as to support the outer periphery of the disk-shaped bonding stage 20 at intervals of 120 °.
- each vertical position adjustment support mechanism 30 has a motor 31 and a cam 36 attached to a frame 31 fixed to the upper surface of the base 12.
- the frame 31 includes a common flat plate 31d and three brackets 31a, 31b, and 31c protruding from the flat plate 31d.
- the end surface of the motor 32 is fixed to one vertical surface of the bracket 31a, and the rotating shaft 33 of the motor 32 protrudes from the vertical surface opposite to the motor 32 through the bracket 31a.
- the brackets 31 b and 31 c support the rotation shaft 35 of the cam 36.
- the rotating shaft 35 of the cam 36 penetrates the brackets 31b and 31c, respectively, and protrudes to the motor 32 side from the vertical surface of the bracket 31b on the motor 32 side.
- the end surface of the rotating shaft 35 of the cam 36 protruding from the vertical surface on the motor 32 side of the bracket 31b is opposed to the end surface of the rotating shaft 33 of the motor 32, and the end surfaces of the rotating shafts 33, 35 facing each other.
- the parts are connected by a coupling 34. Therefore, when the motor 32 rotates, the rotating shafts 33 and 35 rotate, and thereby the cam 36 rotates.
- the frame 31, the cam 36, and the rotating shaft 35 constitute a cam mechanism.
- the bonding stage 20 is provided at intervals of 120 ° on the outer peripheral portion of the lower surface 22, which is a surface opposite to the surface 21 for attracting and fixing a substrate or wafer that is a bonding target.
- a bracket 23, a pin 25 connected to the bracket 23, and a cylindrical cam follower 24 that is rotatably attached to the pin 25 are provided.
- a contact point 27 between the upper surface of the cam 36 constituting the vertical position adjustment support mechanism 30 and the outer surface of the cam follower 24 serves as a support point of the bonding stage 20. Accordingly, the three vertical position adjustment support mechanisms 30 support the contact points 27 as the three support points in the vertical direction.
- the vertical direction of each contact 27 is controlled by controlling the rotation angle of the cam 36.
- the position in the (Z direction) can be adjusted.
- a heater is incorporated in the bonding stage 20, and the bonding stage 20 is entirely heated during bonding. At this time, the bonding stage 20 is thermally expanded toward the outer peripheral side due to the temperature rise, and the position of each bracket 23 is also moved to the outer peripheral side of the bonding stage 20.
- the bonding stage 20 Since the movement amount of the bonding stage 20 due to this thermal expansion is absorbed by the cam follower 24 moving in the horizontal direction with respect to the cam 36, even if the bonding stage 20 is thermally expanded, the bonding stage 20 has three upper and lower positions.
- the three contact points 27 may be supported in the vertical direction by the direction position adjustment support mechanism 30, or the surface that is fixed to the pin 25 and is in contact with the cam 36 may be a flat surface.
- a pressurizing spring 50 is provided adjacent to each cam 36 of the three vertical position adjustment support mechanisms 30.
- the pressurizing spring 50 includes two cylindrical spring cases 51 attached to the flat plate 31 d of the frame 31 of the vertical position adjustment support mechanism 30 and coil springs 52 attached to the inside of each spring case 51. Has been. One end of each coil spring 52 is connected to the bonding stage 20, and the bonding stage 20 is pulled toward the base 12 so that a pressing force acts between the cam follower 24 shown in FIGS. 2 and 4 and the cam 36. Has been. 2 and 4, the pressurizing spring 50 is simply indicated as a spring symbol.
- the leaf spring mechanism 40 is fixed to the base 12 and a first fixing member 41 (first side) which is a rigid strip fixed to the lower surface 22 of the bonding stage 20.
- a second fixing member 45 (second side) which is a rigid band plate, a substantially trapezoidal rigid body portion 43 disposed between the first and second fixing members 41, 45, and the first fixing member 41
- a band-shaped first leaf spring 42 that is a first flexible portion that connects between the rigid portion 43 and a second flexible portion that connects between the second fixing member 45 and the rigid portion 43.
- a belt-shaped second leaf spring 44 that is, the first and second leaf springs 42 and 44 are adjacent to the first and second fixing members 41 and 45, respectively.
- the first fixing member 41 is shorter than the second fixing member 45, and each length is equal to the length of the rigid body portion 43 on the first fixing member 41 side and the rigid body portion 43. Therefore, the leaf spring mechanism 40 has a substantially trapezoidal shape as a whole.
- the first fixing member 41 and the second fixing member 45 are parallel to the X axis 91 passing through the gravity center position 26 of the bonding stage, which is the first axis, and are the second axis.
- the base 12 and the bonding stage 20 are arranged so that the center of the first fixing member 41 and the second fixing member 45 in the X-axis 91 direction is on the Y-axis 92 so as to be orthogonal to the Y-axis 92 passing through the gravity center position 26 of the bonding stage. It is arranged between.
- FIG. 2 the first fixing member 41 as shown in FIG.
- the second fixing member 45 is a second distance on the upper surface of the base 12 that is opposite to the fixing position of the first fixing member 41 and the gravity center position 26 and is longer than the first distance L 1 from the gravity center position 26.
- L 2 is fixed at a position shifted in the positive direction of the Y-axis 92. The vertical axis passing through the center of gravity position 26 shown in FIG.
- the first leaf spring 42 and the second leaf spring 44 are provided between the first fixing member 41 and the rigid body portion 43 and between the second fixing member 45 and the rigid body portion 43, respectively. Since it is a strip-shaped leaf spring adjacent to the first and second fixing members 41 and 45, the direction parallel to the first and second fixing members 41 and 45, and the first and second fixing members 41 and 45, The directions orthogonal to each other, that is, the direction of the X axis 91 and the direction of the Y axis 92 function as a substantially rigid body, and therefore the direction of the X axis 91 between the base 12 and the bonding stage 20 and the direction of the Y axis 92. The relative movement of is restricted.
- the first leaf spring 42 and the second leaf spring 44 are thin, they are easily bent in the thickness direction, and the bonding stage 20 is changed from the state shown in FIG. As shown in FIG. 5B, when the first plate spring 42 and the second plate spring 44 are moved in the vertical direction (Z direction), the first plate spring 42 and the second plate spring 44 are bent and deformed in the thickness direction, that is, around the X axis.
- the fixing member 45 acts as a parallel link, and allows relative movement in the vertical direction (Z direction) between the base 12 and the bonding stage 20.
- the first plate spring 42 and the second plate spring 44 are bent around the X axis, and the torsion 94 (the first torsion) around the X axis 91 shown in FIG. ) Is allowed. Furthermore, since the first leaf spring 42 of the leaf spring mechanism 40 has a short length, the torsion 95 (second torsion) around the Y axis 92 between the first fixing member 41 and the rigid body portion 43 is allowed. . That is, the leaf spring mechanism 40 restrains the relative movement of the bonding stage 20 with respect to the base 12 in the X-axis 91 direction and the Y-axis 92 direction, and twists 94 (about the X-axis 91 of the bonding stage 20 with respect to the base 12). The first twist), the twist 95 around the Y axis 92 (second twist), and the vertical movement (Z direction) of the bonding stage 20 relative to the base 12 are allowed.
- the bonding stage 20 Since the bonding stage 20 is pressed against the cams 36 of the three vertical position adjustment support mechanisms 30 by the pressurizing springs 50, the vertical position of the bonding stage 20, the inclination around the X axis 91, and the Y axis 92 The surrounding inclination is adjusted by the three vertical position adjustment support mechanisms 30. Furthermore, the bonding stage 20 uses flexible first and second leaf springs 42 and 44 instead of a connection method that may include backlash such as a link, and a plate having high rigidity in the XY directions. Since it is connected to the base 12 by the spring mechanism 40, it is possible to suppress the bonding stage 20 from moving or vibrating in the vertical direction or moving or vibrating in the XY direction during high-speed bonding. It can be effectively applied to high-speed bonding.
- the first fixing member 41 and the second fixing member 45 are described as being arranged so as to be parallel to the X axis 91 and orthogonal to the Y axis 92.
- the second fixing member 45 may be arranged so as to be parallel to the Y axis 92 and orthogonal to the X axis 91.
- the X axis 91 and the Y axis 92 do not have to be in the substrate transport direction and the orthogonal direction in the flip chip bonder 100, and may be orthogonal to each other along the surface 21 of the bonding stage 20.
- FIG. 6 shows the configuration of the bonding stage 20 of the present embodiment.
- the bonding stage 20 of the present embodiment includes, for example, a first layer 20a having a low thermal conductivity, such as ceramics, and a thermal conductivity larger than that of the first layer 20a.
- a first layer 20a having a low thermal conductivity, such as ceramics, and a thermal conductivity larger than that of the first layer 20a.
- Is substantially the same as the first layer 20a for example, a second layer 20b made of austenitic stainless steel or the like, a third layer 20c made of the same material as the second layer 20b, and a second layer And a heater 28 sandwiched between the layer 20b and the third layer 20c.
- the first layer 20a, the second layer 20b, and the third layer 20c are configured by laminating materials having the same thermal expansion coefficient. Therefore, the bonding stage 20 is heated by the heater 28. In this case, deformation such as the warping of the bonding stage 20 by heat can be suppressed, and the flatness of the surface 21 of the bonding stage 20 can be ensured.
- the entire bonding stage 20 is heated to a predetermined temperature by the heater 28. 6B, the position of the electrode 62 provided on the substrate 61 sucked and fixed on the surface 21 of the bonding stage 20, and the electrode of the semiconductor chip 65 sucked by the bonding tool 70 are obtained.
- the position of the pillar 66 formed on 65a is aligned, the semiconductor chip 65 is heated with the bonding tool 70, the pillar 66 is pressed against the electrode 62 of the substrate 61, and the solder film 67 formed on the tip of the pillar 66 is applied.
- the plated layer 63 and the pillar 66 at the tip of the electrode 62 of the substrate 61 are welded with solder, and the semiconductor chip 65 is mounted on the substrate 61.
- the heat from the heating of the bonding tool 70 is adjacent to the semiconductor chip 65 to which bonding is performed.
- the other semiconductor chip 65 is heated less, effectively suppressing the heat from being transferred to the semiconductor chip 65 that has already been bonded in the adjacent region, and the solder of the semiconductor chip 65 that has been bonded is remelted. Can be effectively suppressed.
- each motor 32 of the three vertical position adjustment support mechanisms 30 is connected to the control unit 80, and the rotation angle is controlled by a command from the control unit 80.
- the control unit 80 is a computer that includes a CPU 81 therein, and includes a motor interface 86 that exchanges control signals between the storage unit 89 and the motor 32 therein.
- the storage unit 89 stores a flatness correction program 82, a flatness map 83, a deformation amount correction program 84, and an expected deformation amount map 85, which will be described later.
- the CPU 81, the storage unit 89, and the motor interface 86 are connected by a data bus 87.
- the CPU 81 receives from the main control unit 110 which controls the bonding operation of the flip chip bonder 100 a command signal for the position of the bonding tool in the XY direction and a position (height) in the Z direction, and a command signal for the pressing load of the bonding tool. Are input via the data link 88.
- the flatness map 83 divides the surface 21 of the bonding stage 20 into fine sections 71 as shown in FIG. 7A, and sets the height of each section 71, for example, the reference height to 0.
- the swell of the surface 21 as shown in FIG. 7B is used as a reference so that the absolute value increases as the distance from the reference value increases. It has become.
- the XY position of each section 71 and the standardized height (Z direction position), the inclination angle of the surface of each section 71, and the inclination direction Is a flatness map 83 stored in the storage unit 89 shown in FIG.
- the expected deformation amount map 85 divides the surface 21 of the bonding stage 20 into fine sections 72 as shown in FIG. 10A, as shown in FIGS. 10A and 10B.
- a reference pressing load F 0 is applied to a certain section 73
- values obtained by standardizing a reference deflection amount d 0 that is an expected deformation amount generated in the section 73 are tabulated. Therefore, the table, the reference deflection amount d 0 of each section 73 into one section each 73 to be pressed is being stored.
- the expected deformation amount map 85 includes 100 data. For example, as shown in FIG.
- the reference deflection amount d 0 that is an expected deformation amount is the vicinity where the bracket 23 shown in FIG. 2 supported by the three vertical position adjustment support mechanisms 30 is provided.
- FIG. 10 (a) regions A, B, C indicated by a broken line
- the reference amount of deflection d 0 since the bonding stage 20 is not deflected even subjected to any pressure load F is 0,
- Ya central portion Since the bonding stage 20 bends due to the reference pressing load F 0 in the intermediate portions of the regions A, B, and C, the reference deflection amount d 0 becomes large as shown in FIG.
- the tip of the bonding tool 70 shown in FIG. 6A is lowered until it contacts the surface 21 of the bonding stage 20, and the height of the tip of the bonding tool 70 contacting the surface 21 of the bonding stage 20 is detected.
- the height of the surface 21 of the bonding stage 20 is measured. This measurement is performed at any three different points on the surface 21, for example, three points positioned at 120 ° intervals in the circumferential direction near the outer periphery.
- the inclination of the surface 21 of the bonding stage 20 with respect to the horizontal plane is calculated based on the measured height of the surface 21 of the three bonding stages 20, and the three vertical position adjustment support mechanisms 30 are operated based on the calculation result.
- the inclination of the surface 21 of the bonding stage 20 is adjusted. This operation may be performed manually, or may be performed automatically by linking the control unit 80 and the main control unit 110 of the flip chip bonder 100.
- a flatness correction program 82 is run as shown in FIG. Run to perform bonding.
- the CPU 81 of the control unit 80 receives the position in the XY direction and the Z direction of the bonding tool 70 shown in FIG. 6 from the main control unit 110 of the flip chip bonder 100 via the data link 88. Is obtained, and the section 71 to be bonded is specified.
- CPU81 reads the reference deflection amount d 0 with respect to the reference pressure load F 0 section 71 identified from flatness map 83.
- the CPU 81 of the control unit 80 rotates the rotation angles of the motors 32 of the three vertical position adjustment support mechanisms 30 necessary for leveling the surface of the identified section 71 as shown in step S103 of FIG. As shown in step S104 of FIG. 8, each motor 32 is rotated by the calculated rotation angle so that the surface 21 of the section 71 to be bonded is adjusted to be parallel to the horizontal. Then, as shown in step S105 of FIG. 8, the control unit 80 determines whether bonding to all bonding positions has been completed. If bonding to all bonding positions has not been completed, step 80 of FIG. As shown in S106, the bonding tool 70 is moved to the next bonding position, and the process returns to Step S101 in FIG. 8 to move to the next bonding position in the same manner as described above, and the flatness map 83 is displayed. While referencing, the motors 32 of the three vertical position adjustment support mechanisms 30 are rotated so that the surface of the section 71 at that position is horizontal.
- each section 71 is provided even when the surface 21 of the bonding stage 20 has a swell as shown in FIG. 6B, the plurality of pillars 66 of the semiconductor chip 65 and the plurality of electrodes 62 of the substrate 61 shown in FIG. 6B are provided in the same manner as the bonding stage 20 having high flatness. Since they can be brought into contact with each other at the same time, it is possible to suppress contact between a part of the plurality of pillars 66 and the plurality of electrodes 62 and improve the bonding quality.
- step S201 of FIG. 9 the CPU 81 of the control unit 80 receives the position in the XY direction and the Z direction of the bonding tool 70 shown in FIG. 6 from the main control unit 110 of the flip chip bonder 100 via the data link 88. A command signal of height H is obtained, and the section 73 to be bonded is specified. Then, as shown in step S202 of FIG. 9, the CPU 81 reads the data of the height, the surface inclination angle, and the inclination direction of the section 73 specified from the predicted deformation amount map 85.
- the control unit 80 acquires the command value of the pressing load F from the main control unit 110 of the flip chip bonder 100 via the data link 88, as shown in step S203 of FIG.
- the main control unit 110 of the flip chip bonder 100 between the time t 0 shown in FIG. 11 (a) to time t 1, towards the section 73 that is identified as line a shown in FIG. 11 (a)
- the command value of the height H of the bonding tool 70 is lowered, and the bonding tool 70 is lowered.
- the semiconductor chip 65 adsorbed to the tip of the bonding tool 70 shown in FIG. 6 (b) at time t 1 is in contact with the substrate 61.
- the command value of the pressing load F output from the main control unit 110 is zero.
- the main control unit 110 raises the command value of the pressing load F at the time t 2 from zero, go against the pillar 66 of the semiconductor chip 65 to the electrode 62 of the substrate 61.
- the CPU 81 of the control unit 80 acquires a command value for the pressing load F via the data link 88.
- the command value and compares the reference pressure load F 0, the reference deflection amount it is determined that the sections 73 identified flexes in response to the ratio of the pressure load F d
- the expected deflection amount d 1 is calculated by multiplying 0 by the ratio of the command value of the pressing load F and the reference pressing load F 0 .
- CPU 81 calculates the three required rotational angles of the motor 32 in the vertical position adjusting support mechanism 30 required to correct the predicted deflection amount d 1. Then, as shown in step S205 of FIG. 9, the control unit 80 rotates each motor 32 by the calculated angle, pushes up the surface 21 of the bonding stage 20 by the expected deflection amount d 1 of the section 73, and the pressing load F is Even if added, the surface 21 is held at a predetermined height. At this time, the deflection correction amount e 1 corrected by the vertical position adjustment support mechanism 30 shown in FIG. 11B has the same absolute value as the expected deflection amount d 1 and has the opposite direction.
- the control unit 80 After correction of the estimated amount of deflection d 1 is completed, the control unit 80, as shown in step S206 of FIG. 9, the pressing by the bonding tool 70 to determine whether the termination. Then, if the command value of the pressing load F acquired from the main control unit 110 via the data link 88 is not zero, the control unit 80 determines that pressing has not ended, and the process proceeds to step S203 in FIG. Returning again, the command value of the pressing load F is acquired again from the main control unit 110 via the data link 88, and as shown in steps S204 to S205 in FIG. the deflection amount d 1 is calculated and rotates the motors 32 so as to correct the estimated deflection amount d 1. As shown by the dashed line b in FIG.
- the pressing load F from the time t 2 to time t 3 is gradually increased, a line c in FIG. 11 (b), the deflection correction amount e 1 also increases To go.
- the command value of the pressing load F for example at time t 3 in FIG. 11 (a), 500 N or the like, becomes constant, as indicated by the line c in FIG. 11 (b), the deflection correction amount e 1 also a constant magnitude Become.
- the control unit 80 repeats steps S203 to S206 of FIG. 9 until the command value of the pressing load F becomes zero (until pressing is completed), and the expected deflection amount according to the change of the command value of the pressing load F.
- d 1 and the deflection correction amount e 1 are changed, the rotational angle position of each motor 32 is adjusted, and the surface of the section 73 is controlled to maintain a constant height.
- the main control unit 110 When turned time t 3 the main control unit 110, to melt the tip of the solder film 67 of the pillar 66 of the semiconductor chip 65 to turn on the heater 28 built in the bonding tool 70 shown in FIG. 6, melted solder Thus, the pillar 66 and the plating layer 63 on the surface of the electrode 62 of the substrate 61 are joined.
- Control unit 80 once the command value of the pressure load obtained from the main control unit 110 at time t 5 becomes zero, it is determined that the pressing in step S206 of FIG. 9 has been completed, as shown in step S207 of FIG. 9 Then, it is determined whether or not all bonding is completed. If all bonding has not been completed, the process moves to the next bonding position as shown in step S208 of FIG.
- the main control unit 110 together with the start to reduce the command value of the pressing load F at time t 4 in FIG. 11 (a), as an off-heater 28 built in the bonding tool 70 shown in FIG. 6, and melted
- the solder film 67 is cooled and solidified, and the pillar 66 and the plating layer 63 are connected.
- the main control unit 110 raises the bonding tool 70 shown in FIG. 6, moving to the next bonding point.
- a pressing load F is applied during bonding, bonding can be performed in a state similar to that in which bending deformation does not occur. Therefore, as with the bonding stage 20 having high rigidity, FIG.
- the plurality of pillars 66 of the semiconductor chip 65 shown in FIG. 5 and the plurality of electrodes 62 of the substrate 61 can be brought into contact with each other at substantially the same time, and the contact between the plurality of pillars 66 and a part of the plurality of electrodes 62 is suppressed. Quality can be improved.
- the expected deformation amount map 85 is described as a table of the reference deflection amount d 0 when the reference pressing load F 0 is applied to each section 73, but other than the reference deflection amount d 0 .
- the reference inclination amount data may be stored together with the amount of deflection and the inclination may be corrected.
- the bonding stage 20 is described as being supported by the three vertical position adjustment support mechanisms 30. However, the bonding stage 20 is supported by four or more vertical position adjustment support mechanisms 30. You may make it do. Further, the bonding stage 20 is not limited to a disc shape, but may be a square flat plate shape.
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Abstract
Description
Claims (19)
- フリップチップボンダであって、
基体部と、
ボンディング対象物を吸着固定するボンディングステージと、
前記基体部に取り付けられ、前記ボンディングステージのボンディング対象物を吸着固定する表面と反対側の面に設けられた複数の支持点をそれぞれ上下方向に支持すると共に、各支持点の上下方向位置を調整する複数の上下方向位置調整支持機構と、
前記基体部と前記ボンディングステージとを接続する接続部材と、を備え、
前記接続部材は、
前記ボンディングステージの表面に沿った第一軸の方向と、前記ボンディングステージの表面に沿って前記第一軸と直交する第二軸の方向と、についての前記基体部に対する前記ボンディングステージの相対移動を拘束し、且つ、前記基体部に対する前記ボンディングステージの前記第一軸周りの第一の捩りと、前記第二軸周りの第二の捩りと、前記基体部に対する前記ボンディングステージの上下方向の移動とを許容するフリップチップボンダ。 - 請求項1に記載のフリップチップボンダであって、
前記接続部材は、第一の辺と第二の辺とが平行な略台形形状で、前記第一の辺に隣接し、前記第一の辺に沿った第一の可撓性部と、前記第二の辺に隣接し、前記第二の辺に沿った第二の可撓性部と、前記第一の可撓性部と前記第二の可撓性部との間の剛体部とを有する板ばね機構であり、
前記第一の辺と前記第二の辺とが前記第一軸または前記第二軸と平行となるように前記基体部と前記ボンディングステージとの間に配置されているフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記板ばね機構の前記第一の辺は前記第二の辺よりも短く、
前記板ばね機構の前記第一の辺は、前記ボンディングステージの表面と反対側の面で、前記ボンディングステージの重心位置よりも第一の距離だけずれた第一の位置に取り付けられ、
前記板ばね機構の前記第二の辺は、前記基体部の前記ボンディングステージと対向する面で、前記第一の位置と前記重心の反対側であって前記重心から前記第一の距離よりも長い第二の距離だけずれた第二の位置に取り付けられているフリップチップボンダ。 - 請求項1に記載のフリップチップボンダであって、
前記ボンディングステージの各支持点を前記各上下方向位置調整支持機構の上に押し付ける複数の与圧ばねを含み、
前記各上下方向位置調整支持機構は、前記各支持点に接するカム機構を含むフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記ボンディングステージの各支持点を前記各上下方向位置調整支持機構の上に押し付ける複数の与圧ばねを含み、
前記各上下方向位置調整支持機構は、前記各支持点に接するカム機構を含むフリップチップボンダ。 - 請求項3に記載のフリップチップボンダであって、
前記ボンディングステージの各支持点を前記各上下方向位置調整支持機構の上に押し付ける複数の与圧ばねを含み、
前記各上下方向位置調整支持機構は、前記各支持点に接するカム機構を含むフリップチップボンダ。 - 請求項1に記載のフリップチップボンダであって、
前記上下方向位置調整支持機構を動作させる制御部を含み、
前記制御部は、
前記ボンディングステージ各部の平坦度を示す平坦度マップを備え、
ボンディング位置に応じて前記平坦度マップに基づいて前記ボンディングステージの高さと傾斜とを補正する平坦度補正手段を備えているフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記上下方向位置調整支持機構を動作させる制御部を含み、
前記制御部は、
前記ボンディングステージ各部の平坦度を示す平坦度マップを備え、
ボンディング位置に応じて前記平坦度マップに基づいて前記ボンディングステージの高さと傾斜とを補正する平坦度補正手段を備えているフリップチップボンダ。 - 請求項3に記載のフリップチップボンダであって、
前記上下方向位置調整支持機構を動作させる制御部を含み、
前記制御部は、
前記ボンディングステージ各部の平坦度を示す平坦度マップを備え、
ボンディング位置に応じて前記平坦度マップに基づいて前記ボンディングステージの高さと傾斜とを補正する平坦度補正手段を備えているフリップチップボンダ。 - 請求項1に記載のフリップチップボンダであって、
前記上下方向位置調整支持機構を動作させる制御部を含み、
前記制御部は、
ボンディングツールを前記ボンディングステージに押し当てた際の押圧荷重による前記ボンディングステージ各部の予想変形量を示す予想変形量マップを備え、
ボンディングの際の押圧位置と押圧荷重に応じて前記ボンディングステージの予想変形量だけ前記ボンディングステージの高さと傾斜とを補正する変形量補正手段を備えているフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記上下方向位置調整支持機構を動作させる制御部を含み、
前記制御部は、
ボンディングツールを前記ボンディングステージに押し当てた際の押圧荷重による前記ボンディングステージ各部の予想変形量を示す予想変形量マップを備え、
ボンディングの際の押圧位置と押圧荷重に応じて前記ボンディングステージの予想変形量だけ前記ボンディングステージの高さと傾斜とを補正する変形量補正手段を備えているフリップチップボンダ。 - 請求項3に記載のフリップチップボンダであって、
前記上下方向位置調整支持機構を動作させる制御部を含み、
前記制御部は、
ボンディングツールを前記ボンディングステージに押し当てた際の押圧荷重による前記ボンディングステージ各部の予想変形量を示す予想変形量マップを備え、
ボンディングの際の押圧位置と押圧荷重に応じて前記ボンディングステージの予想変形量だけ前記ボンディングステージの高さと傾斜とを補正する変形量補正手段を備えているフリップチップボンダ。 - 請求項1に記載のフリップチップボンダであって、
前記ボンディングステージは、
熱伝導率が低い第一の層と、
熱伝導率が前記第一の層よりも大きく、熱膨張率が前記第一の層と略同様な第二の層と、
前記第二の層と同様の材料で構成されている第三の層と、
前記第二の層と前記第三の層との間に挟みこまれたヒータと、
を備えているフリップチップボンダ。 - 請求項2に記載のフリップチップボンダであって、
前記ボンディングステージは、
熱伝導率が低い第一の層と、
熱伝導率が前記第一の層よりも大きく、熱膨張率が前記第一の層と略同様な第二の層と、
前記第二の層と同様の材料で構成されている第三の層と、
前記第二の層と前記第三の層との間に挟みこまれたヒータと、
を備えているフリップチップボンダ。 - 請求項3に記載のフリップチップボンダであって、
前記ボンディングステージは、
熱伝導率が低い第一の層と、
熱伝導率が前記第一の層よりも大きく、熱膨張率が前記第一の層と略同様な第二の層と、
前記第二の層と同様の材料で構成されている第三の層と、
前記第二の層と前記第三の層との間に挟みこまれたヒータと、
を備えているフリップチップボンダ。 - フリップチップボンダのボンディングステージ平坦度補正方法であって、
基体部と、ボンディング対象物を吸着固定するボンディングステージと、前記基体部に取り付けられ、前記ボンディングステージのボンディング対象物を吸着固定する表面と反対側の面に設けられた複数の支持点をそれぞれ上下方向に支持すると共に、各支持点の上下方向位置を調整する複数の上下方向位置調整支持機構と、前記基体部と前記ボンディングステージとを接続する接続部材と、前記上下方向位置調整支持機構を動作させる制御部と、を備える前記フリップチップボンダを用意する工程と、
前記ボンディングステージ各部の平坦度を示す平坦度マップを前記制御部内に用意する工程と、
前記制御部によって複数の前記上下方向位置調整支持機構を動作させ、ボンディング位置に応じて前記平坦度マップに基づいて前記ボンディングステージの高さと傾斜とを補正する工程と、
を備えるボンディングステージ平坦度補正方法。 - 請求項16に記載のボンディングステージ平坦度補正方法において、
前記接続部材は、前記ボンディングステージの表面に沿った第一軸の方向と、前記ボンディングステージの表面に沿って前記第一軸と直交する第二軸の方向と、についての前記基体部に対する前記ボンディングステージの相対移動を拘束し、且つ、前記基体部に対する前記ボンディングステージの前記第一軸周りの第一の捩りと、前記第二軸周りの第二の捩りと、前記基体部に対する前記ボンディングステージの上下方向の移動とを許容するボンディングステージ平坦度補正方法。 - フリップチップボンダのボンディングステージ変量補正方法であって、
基体部と、ボンディング対象物を吸着固定するボンディングステージと、前記基体部に取り付けられ、前記ボンディングステージのボンディング対象物を吸着固定する表面と反対側の面に設けられた複数の支持点をそれぞれ上下方向に支持すると共に、各支持点の上下方向位置を調整する複数の上下方向位置調整支持機構と、前記基体部と前記ボンディングステージとを接続する接続部材と、前記上下方向位置調整支持機構を動作させる制御部と、を備えるフリップチップボンダを用意する工程と、
ボンディングツールをボンディングステージに押し当てた際の押圧荷重による前記ボンディングステージ各部の予想変形量を示す予想変形量マップを前記制御部内に用意する工程と、
前記制御部によって複数の前記上下方向位置調整支持機構を動作させ、ボンディングの際の押圧位置と押圧荷重に応じて前記ボンディングステージの予想変形量だけボンディングステージの高さと傾斜とを補正する工程と、
を備えるボンディングステージ変形量補正方法。 - 請求項18に記載のフリップチップボンダのボンディングステージ変形量補正方法であって、
前記接続部材は、前記ボンディングステージの表面に沿った第一軸の方向と、前記ボンディングステージの表面に沿って前記第一軸と直交する第二軸の方向と、についての前記基体部に対する前記ボンディングステージの相対移動を拘束し、且つ、前記基体部に対する前記ボンディングステージの前記第一軸周りの第一の捩りと、前記第二軸周りの第二の捩りと、前記基体部に対する前記ボンディングステージの上下方向の移動とを許容するボンディングステージ変形量補正方法。
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SG11201504793TA SG11201504793TA (en) | 2012-12-21 | 2013-12-19 | Flip chip bonder and method for correcting flatness and deformation amount of bonding stage |
CN201380025531.XA CN104303277B (zh) | 2012-12-21 | 2013-12-19 | 覆晶黏晶机以及黏晶平台的平坦度与变形量补正方法 |
JP2014545026A JP5701465B2 (ja) | 2012-12-21 | 2013-12-19 | フリップチップボンダ及びボンディングステージの平坦度並びに変形量補正方法 |
KR1020147029965A KR101603536B1 (ko) | 2012-12-21 | 2013-12-19 | 플립 칩 본더 및 본딩 스테이지의 평탄도 및 변형량 보정 방법 |
US14/743,050 US9406640B2 (en) | 2012-12-21 | 2015-06-18 | Flip chip bonder and method of correcting flatness and deformation amount of bonding stage |
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US10818618B2 (en) | 2018-07-24 | 2020-10-27 | Shin-Etsu Chemical Co., Ltd. | Adhesive substrate, transfer device having adhesive substrate, and method for producing adhesive substrate |
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Also Published As
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TWI512855B (zh) | 2015-12-11 |
US9406640B2 (en) | 2016-08-02 |
US20160043053A1 (en) | 2016-02-11 |
TW201430975A (zh) | 2014-08-01 |
KR101603536B1 (ko) | 2016-03-15 |
KR20140139079A (ko) | 2014-12-04 |
SG11201504793TA (en) | 2015-07-30 |
JP5701465B2 (ja) | 2015-04-15 |
CN104303277B (zh) | 2017-05-10 |
JPWO2014098174A1 (ja) | 2017-01-12 |
CN104303277A (zh) | 2015-01-21 |
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