WO2013035232A1 - 原料濃度検出機構を備えた原料気化供給装置 - Google Patents
原料濃度検出機構を備えた原料気化供給装置 Download PDFInfo
- Publication number
- WO2013035232A1 WO2013035232A1 PCT/JP2012/004559 JP2012004559W WO2013035232A1 WO 2013035232 A1 WO2013035232 A1 WO 2013035232A1 JP 2012004559 W JP2012004559 W JP 2012004559W WO 2013035232 A1 WO2013035232 A1 WO 2013035232A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- raw material
- gas
- flow rate
- mass flow
- pressure
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 33
- 230000008016 vaporization Effects 0.000 title claims abstract description 32
- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 238000009834 vaporization Methods 0.000 title claims abstract description 18
- 230000007246 mechanism Effects 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims abstract description 209
- 239000012159 carrier gas Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 20
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims description 176
- 238000004364 calculation method Methods 0.000 claims description 36
- 230000001276 controlling effect Effects 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract description 16
- 239000012876 carrier material Substances 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- 238000005259 measurement Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 230000006837 decompression Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D3/00—Arrangements for supervising or controlling working operations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8158—With indicator, register, recorder, alarm or inspection means
Definitions
- the present invention relates to an improvement of a raw material vaporization supply apparatus for a semiconductor manufacturing apparatus by a so-called metal organic chemical vapor deposition method (hereinafter referred to as MOCVD method), and increases the raw material concentration in a raw material mixed gas supplied to a process chamber.
- MOCVD method metal organic chemical vapor deposition method
- the present invention relates to a raw material vaporization and supply apparatus equipped with a raw material concentration detection mechanism that can be quickly controlled with accuracy and can display a raw material gas concentration in real time.
- a raw material vaporizing and supplying apparatus for semiconductor manufacturing equipment, a raw material vaporizing and supplying apparatus utilizing a so-called bubbling method has been widely used.
- a raw material vaporizing and supplying apparatus is used. Realization of large-scale downsizing, increase of raw material supply amount, quick and accurate control of the mixing ratio of carrier gas and raw material gas, and direct display of raw material gas concentration in the mixed gas supplied to the chamber, etc. Is strongly requested.
- FIG. 6 is a diagram for explaining the configuration of the reactive gas control method according to the above-mentioned Japanese Patent Application Laid-Open No. 7-118862.
- 31 is a sealed tank
- 32 is a heater
- 33 is a mass flow controller
- 34 is a blow-in.
- TEOS liquid raw material
- G K is carrier gas (N 2 )
- G m mixed gas (G + G K )
- G raw material gas
- Q 1 is carrier Gas flow rate
- Q 2 is a raw material gas flow rate
- Q S is a mixed gas flow rate
- 37 is a flow rate setting circuit
- 38 a is a concentration calculation circuit
- 38 b is a concentration setting circuit
- 38 c is a
- the temperature control of the liquid material L 0 adjusts the output flow rate Q 2 of the raw material gas G, while the concentration of the raw material gas G in the gas mixture Gm is to St. kept constant, specifically, From the mixed gas flow rate Q S from the mass flow meter 36 and the carrier gas flow rate Q 1 from the mass flow controller 33, the source gas generation flow rate Q 2 is calculated. Further, by obtaining Q 2 / Q S from the calculated Q 2 (the generated flow rate of the raw material gas), the raw material gas concentration K S in the mixed gas G m is calculated.
- the calculated source gas concentration K S is input to the concentration setting circuit 38b, and compared with the set concentration K SO , the difference (K SO ⁇ K S ) between the two is fed back to the current control circuit 38c, and K SO > K S increased occurrence rate Q 2 of the raw material gas G by raising the temperature of the heater 32 in the case of, also, in the case of K SO ⁇ K S is lowers the heater temperature, thereby reducing the incidence rate Q 2. Also, the mixed gas flow rate Q S from the mass flow meter 36 is compared with the set mixed gas flow rate Q SO in the flow rate setting circuit 37, and the flow rate Q 1 of the mass flow controller is adjusted so that the difference between the two becomes zero.
- the raw material gas generation flow rate Q 2 is increased by heating the liquid raw material L 2 O (or the raw material gas generation flow rate Q 2 is decreased by lowering the temperature of the liquid raw material L 2 O ). Therefore, the responsiveness of the concentration adjustment is extremely low. In particular, when the raw material gas concentration is lowered, the responsiveness is extremely low.
- a mass flow meter (thermal flowmeter) 36 the flow rate measurement value greatly varies when mixed gas species and mixing ratio of the mixed gas G m is changed, in the method of FIG. 6, the mixed gas G m when or if the gas species gas species has changed greatly changes the mixing ratio be the same (raw material gas concentration) measurement accuracy of the flow rate Q S is lowered significantly.
- FIG. 7 is a block diagram of the raw material gas supply apparatus according to the above-mentioned Japanese Patent No. 4605790 so that a mixed gas having a predetermined raw material gas concentration can be supplied to the process chamber while controlling the flow rate with high accuracy and high accuracy. It is a thing.
- 21 is a closed tank
- 22 is a thermostatic device
- 23 is a mass flow controller
- 24 is a blow pipe
- 25 is a take-out pipe
- 26 is an automatic pressure regulator for the closed tank
- 26a is an arithmetic control unit
- 26b is a control valve.
- L 2 O is a liquid source
- G K is a carrier gas
- Q 1 is a carrier gas flow rate
- G is a source gas
- G m is a mixed gas (G + G K )
- Q S is a mixed gas flow rate.
- the thermostatic device 22 heats the main body of the closed tank 21 and the automatic pressure regulator 26 for the closed tank and the piping line L to a predetermined temperature.
- the space is filled with a raw material saturated vapor (raw material gas) G.
- the carrier gas G K of flow Q 1 which is flow rate control by the mass flow controller 23 is released from the bottom of the closed tank 21, a mixed gas G m of the saturated vapor G of the raw material and the carrier gas G K is, automatic pressure It is supplied to the outside (process chamber) through the control valve 26b of the adjusting device 26.
- Flow rate Q S of the mixed gas G m is the automatic pressure regulator 26 is adjusted by controlling the mixed gas pressure in the closed tank 21, in the operation control unit 26a of the automatic pressure regulator 26, set comparing the calculated flow rate Q S computed from the measured value of the flow rate Q sO and pressure gauge P O and a thermometer T O, the difference between them (Q sO -Q S) controllable switch control valve 26b so as to be zero Thus, the supply flow rate Q S of the mixed gas G m is controlled to the set flow rate Q S0 .
- Source gas supply device of FIG. 7 by adjusting the internal pressure of the closed tank, a mixed gas G m of constant feed gas concentration determined in correspondence with the heating temperature of the liquid material L O, precision, high response
- the flow rate can be supplied while controlling the flow rate downward, and in the flow rate control of the mixed gas having a predetermined constant raw material gas concentration, excellent effects can be obtained.
- the raw material gas supply apparatus, the flow rate Q S of the mixed gas G m high accuracy, but to be measured with a high responsiveness can be, the raw material gas concentration of the mixed gas G m, and this was measured with high precision
- the raw material gas concentration K S in the gas mixture G m is susceptible predicted to some extent, the process automatically continuously feed gas concentration in the mixed gas G m supplied to the chamber, yet lower cost without using a complicated and expensive densitometer or the like, economic measures, technology to be able to display, It is still undeveloped.
- the present invention relates to the above-mentioned problems in the raw material vaporization and supply apparatus of Japanese Patent Application Laid-Open No. 1-1118862 and Japanese Patent No. 4605790.
- the generation of raw material gas by heating or cooling of the liquid raw material L 2 O for those that increase the flow rate Q (or decrease) is allowed to adjust the raw material gas concentration K S in the gas mixture G m, the after relatively low responsiveness of the control of the raw material gas concentration, in order to increase this requires expensive ancillary equipment, causing the manufacturing cost of the rising and size of the raw material gas supply device,
- (b) the mixed gas species and mixing ratio of the mixed gas G m is changed, the flow rate measurement of the mass flow meter is large varies, the calculation accuracy of the mixed gas flow rate Q decreases and raw density of the measurement accuracy of the S K S is greatly reduced, the pressure fluctuations in the closed tank 31 due to changes in (c) the heating temperature, mass flow meter 3 The measurement accuracy is lowered, problems such that the calculation accuracy of the
- the invention according to claim 1, holding the carrier gas G K through mass flow controller 3 supplies the source tank 5, along with releasing the carrier gas G K from the source tank 5, the source tank 5 by a thermostatic unit 6 at a constant temperature in the raw material vaporizing and supplying apparatus adapted to supply the process chamber with saturated steam G of raw material 4 by which the mixed gas G S between the carrier gas G K and the outflow of the mixed gas G S from the source tank 5
- An automatic pressure adjusting device 8 and a mass flow meter 9 are provided in the passage, and the internal pressure Po of the source tank 5 is controlled to a predetermined value by opening and closing the control valve 8a of the automatic pressure adjusting device 8, and the carrier by the mass flow controller 3 is controlled.
- the raw material concentration calculator 10 is provided with a storage device for saturated vapor pressure data of the raw material in the source tank 5 and the internal pressure P of the source tank 5 from the automatic pressure control device 8. In this configuration, detection signals of O and temperature t are input to the raw material concentration calculator 10.
- the invention according to claim 3, holds the carrier gas G K through mass flow controller 3 supplies the source tank 5, along with releasing the carrier gas G K from the source tank 5, the source tank 5 by a thermostatic unit 6 at a constant temperature in the raw material vaporizing and supplying apparatus adapted to supply the process chamber with saturated steam G of raw material 4 by which the mixed gas G S between the carrier gas G K and the outflow of the mixed gas G S from the source tank 5 the automatic pressure regulating device 8 and a mass flow meter 9 is provided in the passage to control the internal pressure P O of the source tank 5 to a predetermined value by controlling opening and closing of the control valve 8a of the automatic pressure regulating device 8, due to the mass flow controller 3
- the invention of claim 6, which in the invention of claim 3, and to provide a storage device for each data conversion factor conversion factor and carrier gas G K of the raw material gas G in the source tank to the material density arithmetic unit 10 It is.
- the invention of claim 7 is the invention according to any one of claims 1 to 6, wherein a mass flow meter 9 is provided on the downstream side of the automatic pressure regulator 8.
- the invention of claim 8 is the invention according to any one of claims 1 to 6, wherein a mass flow meter 9 is provided on the upstream side of the automatic pressure regulator 8.
- a ninth aspect of the present invention is the control valve according to any one of the first to sixth aspects, wherein the automatic pressure adjusting device 8 is provided downstream of the temperature detector T, the pressure detector P, and the pressure detector P. 8a and a pressure adjusting device including a pressure calculation unit 8b.
- the invention of claim 10 is such that a mass flow meter 9 is provided between the pressure detector P and the control valve 8a.
- the supply flow rate to Q 1 carrier gas G K from the mass flow controller 3, the supply flow rate Q S and the source tank automatic pressure of the mixed gas G S from the mass flow meter 9 the tank internal pressure and the like from the adjustment device 8 enter into the raw material concentration calculating section 10, the raw material concentration at the arithmetic unit 10, in the constant pressure mixture supplied ⁇ Ra supplying mixed gas G S into the chamber at a gas G S because you are configured for calculating display the raw material gas concentration K in real time, more stable with the mixed gas G S of raw material concentration K can be supplied, the raw material concentration K in the mixed gas G S can be displayed digitally It is possible to perform high-quality and stable process processing.
- the material density calculation unit 10 merely need only be added, as compared with the case of using a conventional so-called expensive gas concentration meter, inexpensively and reliably detect the raw material gas concentration K in the mixed gas G S, Can be displayed.
- FIG. 1 It is a systematic diagram which shows the structure of the raw material vaporization supply apparatus provided with the raw material concentration detection mechanism which concerns on 1st Embodiment of this invention.
- FIG. 1 shows an illustration of a raw material gas flow rate Q 2 mixed gas flow rate Q S and test device of investigating the relationship between carrier gas flow rate Q 1, the source tank pressure P O and the source tank temperature t. 2 shows the relationship between the tank internal pressure PO , the mixed gas flow rate Q S, the raw material gas flow rate Q 2, and the
- FIG. 6 is a diagram showing a relationship between a measured value (mixed gas flow rate Q S ⁇ carrier gas flow rate Q 1 ) when the carrier gas flow rate Q 1 is constant and a raw material gas flow rate Q 2 calculated by the equation (2).
- It is a simplified diagram of a source gas supply system. It is explanatory drawing which shows an example of the conventional bubbling-type raw material vaporization supply apparatus. (Japanese Unexamined Patent Publication No. 1-1118862). It is explanatory drawing which shows the other example of the raw material vaporization supply apparatus by the conventional bubbling system (patent 4605790 gazette).
- FIG. 1 is a system diagram showing the configuration of a raw material vaporization supply apparatus equipped with a raw material concentration detection mechanism according to the first embodiment of the present invention.
- 1 is a carrier gas supply source
- 2 is a decompression device
- 3 is a thermal mass flow controller (mass flow controller)
- 4 is a raw material (organometallic compound (MO material), etc.)
- 5 is a source tank
- 6 is a constant temperature section
- 7 is an introduction pipe
- 8 is an automatic pressure regulator in the source tank
- 9 is a mass flow meter
- 10 is a raw material concentration calculation section
- Q 1 is a carrier gas flow rate of Ar or the like
- Q 2 is a raw material saturated steam flow rate (raw material gas flow rate)
- Q S is the flow rate of the mixed gas of the carrier gas flow rate Q 1
- P is the pressure detector of the mixed gas G S
- T is the temperature detector of the mixed gas G S
- 3a Is a sensor unit of the mass flow controller
- 8a is a piezo element drive type control valve
- 9a is a sensor unit of the mass flow meter
- 9b is an
- the mass flow controller 3 includes a sensor unit 3a and a flow rate calculation control unit 3b
- the source tank automatic pressure regulator 8 includes a control valve 8a, a pressure calculation control unit 8b, a pressure detector P, and a temperature detector T. Each is formed.
- N 2 is generally used as the carrier gas G K , but is not limited to N 2, and various gases such as H 2 Ar are used.
- An organic metal compound (MO material) is used as a raw material, but is not limited to an organic metal material, and any liquid material or solid material that can obtain a predetermined saturated vapor pressure in a source tank. good.
- G K carrier gas G is the raw material vapor (feed gas), G S gas mixture
- P O is the source tank pressure (kPa abs.)
- 3e is a flow rate display signal
- 8d is a control valve control signal
- 8c is a pressure detection signal
- 8f is a temperature detection signal
- 8e is a pressure display signal
- 9c is a mixed gas flow rate detection signal
- 9e is a mixed gas a flow rate display signal
- the carrier gas G K is input to the material density arithmetic unit 10 the gas mixture here raw material gas concentration K in G S is calculated and displayed.
- 10K is a raw material concentration display signal.
- the flow rate calculation control unit 3 b of the mass flow controller 3, the pressure calculation control unit 8 b of the automatic pressure adjustment device 8, the flow rate calculation control unit 9 b of the mass flow meter 9, and the raw material concentration calculation unit 10 are integrated together. Although it forms on one board
- the pressure PG 1 of the carrier gas G K supplied into the source tank 5 is set to a predetermined pressure value by the decompression device 2, and the supply flow rate Q 1 is the thermal mass flow control device. (Mass flow controller) 3 is set to a predetermined value. Further, the operation of the constant temperature unit 6 keeps the portion excluding the source tank 5 and the calculation control unit 8b of the automatic pressure adjusting device 9 at a constant temperature.
- the set value supply amount to Q 1 carrier gas G K is the thermal mass flow controller 3, also the temperature of the source tank 5 is set value, further the internal pressure P O is automatic pressure source tank 5 by being respectively maintained at the set value by the adjustment device 8, the mixed gas G S at a constant flow rate at a constant mixing ratio through the control valve 8a is flowed into the mass flow meter 9, wherein the flow rate Q S of the mixed gas G S is high Measured with accuracy.
- the source tank 5 and the control valve 8a of the automatic pressure adjusting device 8 are maintained at a constant temperature, the pressure PMO of the raw material saturated vapor G in the source tank 5 is stabilized, and the automatic pressure adjusting device 8 by controlling the internal pressure P O of the tank 5 to a set value, while stabilizing the concentration K of the raw material gas G in the mixed gas G S, the raw material gas in the mixed gas G S in the raw material concentration calculation unit 10 as described later
- the concentration K can be measured and displayed.
- the raw material flow rate Q 2 is determined by the mixed gas flow rate Q S , the source tank pressure P O , and the raw material vapor pressure (partial pressure) P MO , and the source tank internal pressure P O is determined by the temperature t in the source tank.
- the raw material concentration K in the mixed gas G S will be determined carrier gas flow rate Q 1, the source tank internal pressure P O, the temperature t and the like in the source tank as a parameter.
- the mass flow meter 9 is provided on the downstream side of the automatic pressure adjusting device 8, but the automatic pressure adjusting device 8 is provided on the downstream side of the mass flow meter 9 by exchanging the positions of the two. May be. Further, a mass flow meter 9 may be provided between the pressure detector P and the control valve 8a.
- the control pressure of the automatic pressure adjusting device 8 and the source tank internal pressure coincide with each other, so that the tank internal pressure is accurately controlled.
- the supply pressure of the mass flow meter 9 is affected by the secondary side (process chamber side).
- the mass flow meter 9 when the mass flow meter 9 is provided on the upstream side of the automatic pressure adjusting device 8, the mass flow meter 9 belongs to the pressure control range of the automatic pressure adjusting device 8 and is supplied to the mass flow meter 9. Although the pressure can be stabilized and the flow rate can be measured with high accuracy, a pressure loss occurs in the mass flow meter 9, so that a difference occurs between the control pressure of the automatic pressure adjusting device 8 and the internal pressure of the source tank.
- the mass flow meter 9 When the mass flow meter 9 is provided between the pressure detector P and the control valve 8a, the control pressure of the automatic pressure adjusting device 8 and the internal pressure of the source tank coincide with each other, and the mass flow meter 9 is the automatic pressure adjusting device. 8, the pressure supplied to the mass flow meter 9 is stable, and the flow rate can be measured with high accuracy. However, the mass flow meter 9 allows the pressure between the pressure detector P and the control valve 8a. There is a problem that the pressure control response is affected because of a pressure loss.
- FIG. 2 is an explanatory view of an experimental apparatus performed to confirm the establishment of the relationship of the above formulas (1) and (2).
- a raw material 4 acetone (vapor pressure curve is close to TMGa)
- a constant temperature unit 6 As a water bath, N 2 is used as the carrier gas G K
- the tank temperature t is a parameter ( ⁇ 10 ° C., 0 ° C., 10 ° C., 20 ° C.), and the tank pressure P O and the mixed gas G S flow rate Q S And adjusted the relationship.
- FIG. 3 shows the result of the test carried out by the test apparatus of FIG. 2, and the following Table 1 calculates the raw material gas flow rate Q 2 when the raw material acetone is used by using the formula (2). It is the result.
- Table 2 shows a comparison between the vapor pressure of acetone as a raw material and the vapor pressure of TMGa, which is a general MO material. Since the vapor pressures of both were very close, acetone was used. The calculated values in Table 1 can be said to represent those using TMGa as a raw material.
- the measured value by the mass flow meter (mixed gas flow rate Q S ′ ⁇ carrier gas flow rate Q 1 ) is directly proportional to the calculated acetone flow rate Q 2. Is recognized.
- the source gas flow rate Q 2 can be calculated by measuring the carrier gas flow rate Q 1 with the mass flow controller 3 and the mass flow meter 9 with the mixed gas flow rate Q S and obtaining Q S ⁇ Q 1. It becomes possible.
- the source gas G having a flow rate Q 2 corresponding to the concentration K and the carrier gas G K (N 2 ) having a flow rate Q 1 (ie, Q 2 + Q 1 sccm) are expressed as follows.
- the detected flow rate (converted to N 2 ) of the mixed gas Gs when supplied to the mass flow meter 9 is Q S ′ (sccm)
- the raw material gas flow rate Q 2 and the raw material gas concentration K in the mixed gas are obtained from the following equations.
- CF in the above equation (3) is a so-called conversion factor of the mixed gas Gs in the thermal mass flow meter, and is obtained by the following equation (5).
- CF A is the conversion factor of gas A
- CF B is the conversion factor of gas B
- C is the volume ratio (concentration) of gas A
- (1-C) is the volume ratio of gas B ( (Concentration) (flow measurement AtoZ, edited by Japan Metrology Equipment Industries Association, Kogyo Kogyo Co., Ltd., pp. 176-178).
- Table 3 below, the (5) as a raw material gas flow rate Q 2 to which was calculated using the conversion factor CF obtained by equation (1) and (2) of the raw material gas flow rate Q 2 to which was calculated using the The comparison results are shown, and it can be seen that the values calculated by the equations (1) and (2) and the values calculated by the equation (5) are in good agreement.
- acetone is used as the source gas G
- the temperature t is used as a parameter, and calculation is performed using the equations (1) and (2).
- raw material gas flow rate Q 2 to which was determined from the raw material gas flow rate Q 2 and (5) of the conversion factor CF obtained from the pressure ratio has a flow value that approximates.
- Tables 4, 5, and 6 below show the contrast between the acetone flow rate obtained using the pressure ratio (Equations (1) and (2)) and the acetone flow rate obtained using the conversion factor CF (Equation 5). This shows a case where the N 2 flow rate Q 1 as the carrier gas G K is changed.
- the mass flow controller formula (1) when obtaining the raw material gas flow rate of steam Q 2 and raw material gas vapor concentration K by partial pressure method which is based on (2) is shown in FIG. 1 flow rate measurements from 3 Q 1, tank pressure P O of the measurement values and the other to the vapor pressure curve of the raw material of the flow measurement Q S 'from the mass flow meter 9 from the automatic pressure regulating device 8 (temperature t and vapor it is a matter of course that requires the relationship pressure P MO), can of course it is necessary to set in advance so stored curves temperature t and vapor P MO ingredients 4 to the raw material concentration calculation unit 10 of FIG. 1 .
- the source gas vapor concentration K itself can be increased or decreased by controlling the tank pressure PO and / or the tank temperature t.
- the present invention is applicable not only as a material vaporization supply device used for MOCVD method and CVD method, but also to all gas supply devices configured to supply gas from a pressurized storage source to a process chamber in a semiconductor or chemical product manufacturing apparatus, etc. can do.
- a carrier gas supply source 2 is a decompression device 3 is a mass flow control device 3a is a mass flow controller sensor unit 3b is a mass flow controller flow rate calculation control unit 3e is a flow rate display signal 4 is a raw material (MO material such as an organometallic compound) 5 is a source tank (container) 6 is a constant temperature unit 7 is an introduction pipe 8 is an automatic pressure regulator 8a in the source tank 8a is a control valve 8b is a pressure calculation control unit 8c is a pressure detection signal 8d is a control valve control signal 8e is a pressure display signal 8f is a temperature detection signal 9
- the mass flow meter 9a is a mass flow meter sensor unit 9b
- conversion factor CF a conversion factor CF B conversion factor C is the volume ratio G K source tank pressure PM 0 is the carrier gas G material gas G S mixed gas P 0 is the source tank of the gas a in the gas B a gas a carrier gas feed vapor partial pressure to Q 1 inner flow rate Q S is the flow rate of the mixed gas Q S 'is Ma Flow meter of the detected flow (N 2 equivalent) Q 2 is the raw material gas flow rate Q 2 ′ is the raw material gas flow rate (N 2 equivalent) K is raw material gas vapor concentration P is pressure gauge T is thermometer t is tank temperature (raw material temperature)
Abstract
Description
また、この演算したQ2(原料ガスの発生流量)から、Q2/QSを求めることにより、混合ガスGm内の原料ガス濃度KSが演算される。
また、マスフローメータ36からの混合ガス流量QSは流量設定回路37において設定混合ガス流量QSOと比較され、両者の差分が0となるようにマスフローコントローラの流量Q1が調整される。
また、マスフローコントローラ23により流量制御された流量Q1のキャリアガスGKが密閉タンク21の底部より放出され、このキャリアガスGKと前記原料の飽和蒸気Gとの混合ガスGmが、自動圧力調整装置26の制御弁26bを通して外部(プロセスチャンバ)へ供給されて行く。
1/CF=C/CFA+(1-C)/CFB(但し、CFAはキャリアガスGKのコンバージョンファクター、CFBは原料ガスGのコンバージョンファクター、Cはキャリアガスの容積比率(Q1/(Q1+Q2)である)とするようにしたものである。
図1は本発明の第1実施形態に係る原料濃度検出機構を備えた原料気化供給装置の構成を示す系統図である。
当該原料の気化供給装置では、先ずソースタンク5内へ供給するキャリアガスGKの圧力PG1が減圧装置2により所定圧力値に設定されると共に、その供給流量Q1が熱式質量流量制御装置(マスフローコントローラ)3により所定値に設定される。
また、恒温部6の作動により、ソースタンク5や自動圧力調整装置9の演算制御部8b等を除いた部分が一定温度に保持される。
即ち、
いま、原料ガス供給系を図5のように表現すると、濃度Kに相当する流量Q2の原料ガスGと流量Q1のキャリアガスGK(N2)(即ち、Q2+Q1sccm)をマスフローメータ9へ供給した際の混合ガスGsの検出流量(N2換算)をQS’(sccm)とすると、原料ガス流量Q2及び混合ガス内の原料ガス濃度Kは下式より求められる。
従って、マスフローメータ9で検出された混合ガスGSのN2換算検出流量QS’は、
これにより、原料ガスGの流量Q2はQ2=α(QS’-Q1)として求められる。但し、ここでαは上記原料ガスGのコンバージョンファクターである。
尚、表1では原料ガスGとしてアセトンを、キャリアガスGKとしてN2を流量Q1=500sccmで供給し、温度tをパラメータにして計算をしており、(1)・(2)式の圧力比から求めた原料ガス流量Q2と(5)式のコンバージョンファクターCFより求めた原料ガス流量Q2は近似した流量値となっている。
又、原料ガス蒸気濃度Kそのもの上昇又は下降がタンク圧力PO及び又はタンク温度tの制御により可能なことは勿論である。
2は減圧装置
3は質量流量制御装置
3aはマスフローコントローラのセンサ部
3bはマスフローコントローラの流量演算制御部
3eは流量表示信号
4は原料(有機金属化合物等のMO材料)
5はソースタンク(容器)
6は恒温部
7は導入管
8はソースタンク内の自動圧力調整装置
8aはコントロールバルブ
8bは圧力演算制御部
8cは圧力検出信号
8dはコントロールバルブ制御信号
8eは圧力表示信号
8fは温度検出信号
9はマスフローメータ
9aはマスフローメータのセンサ部
9bはマスフローメータの演算制御部
9cは混合ガス流量検出信号
9eは混合ガス流量の表示信号
10は原料濃度演算部
10Kは濃度検出信号
CFは混合ガスのコンバージョンファクター
CFAはガスAのコンバージョンファクター
CFBはガスBのコンバージョンファクター
CはガスAの容積比率
GKはキャリアガス
Gは原料ガス
GSは混合ガス
P0はソースタンク内圧
PM0はソースタンク内の原料蒸気分圧力
Q1はキャリアガス流量
QSは混合ガス流量
QS’はマスフローメータの検出流量(N2換算)
Q2は原料ガス流量
Q2’は原料ガス流量(N2換算)
Kは原料ガス蒸気濃度
Pは圧力計
Tは温度計
tはタンク温度(原料温度)
Claims (10)
- マスフローコントローラ3を通してキャリアガスGKをソースタンク5内へ供給し、ソースタンク5内よりキャリアガスGKを放出すると共に、ソースタンク5を恒温部6により一定温度に保持して発生せしめた原料4の飽和蒸気Gと前記キャリアガスGKとの混合ガスGSをプロセスチャンバへ供給するようにした原料気化供給装置において、前記ソースタンク5からの混合ガスGSの流出通路に自動圧力調整装置8およびマスフローメータ9を設け、前記自動圧力調整装置8のコントロールバルブ8aを開閉制御することによりソースタンク5の内部圧力Poを所定値に制御し、前記マスフローコントローラ3によるキャリアガスGKの流量Q1と前記タンク内圧Poと前記マスフローメータ9の混合ガスGsの流量QSの各検出値を原料濃度演算部10へ入力し、当該原料濃度演算部10に於いて原料流量Q2をQ2=QS×PMO/POとして演算し(但し、PMOはソースタンク内の温度t℃に於ける原料ガスGの飽和蒸気圧)、当該原料流量Q2を用いて前記プロセスチャンバへ供給する混合ガスGSの原料濃度KをK=Q2/QSとして演算、表示する構成としたことを特徴とする原料濃度検出機構を備えた原料気化供給装置。
- 原料濃度演算部10にソースタンク5内の原料の飽和蒸気圧データの記憶装置を設けると共に、自動圧力制御装置8からソースタンク5の内圧PO及び温度tの検出信号を原料濃度演算部10へ入力する構成とした請求項1に記載の原料濃度検出機構を備えた原料気化供給装置。
- マスフローコントローラ3を通してキャリアガスGKをソースタンク5内へ供給し、ソースタンク5内よりキャリアガスGKを放出すると共に、ソースタンク5を恒温部6により一定温度に保持して発生せしめた原料4の飽和蒸気Gと前記キャリアガスGKとの混合ガスGSをプロセスチャンバへ供給するようにした原料気化供給装置において、前記ソースタンク5からの混合ガスGSの流出通路に自動圧力調整装置8およびマスフローメータ9を設け、前記自動圧力調整装置8のコントロールバルブ8aを開閉制御することによりソースタンク5の内部圧力POを所定値に制御し、前記マスフローコントローラ3によるキャリアガスGKの流量Q1と前記タンク内圧POと前記マスフローメータ9の混合ガスGSの流量QSの検出値とを原料濃度演算部10へ入力し、当該原料濃度演算部10に於いて原料流量Q2をQ2=CF×QS’-Q1(但し、CFは混合ガスQSのコンバージョンファクター)として求め、当該原料流量Q2を用いてプロセスチャンバへ供給する混合ガスGSの原料濃度KをK=Q2/(Q1+Q2)として演算、表示する構成としたことを特徴とする原料濃度検出機構を備えた原料気化供給装置。
- 混合ガスQ2のコンバージョンファクターCFを、
1/CF=C/CFA+(1-C)/CFB(但し、CFAはキャリアガスGKのコンバージョンファクター、CFBは原料ガスGのコンバージョンファクター、Cはキャリアガスの容積比率(Q1/(Q1+Q2)である)とするようにした請求項3に記載の原料濃度検出機構を備えた原料気化供給装置。 - 原料濃度検出部10とマスフローコントローラ3の流量演算制御部3bと自動制御装置の圧力演算制御部8bとマスフローメータ9の流量演算制御部9bとを一体的に集合化する構成とした請求項1又は請求項3に記載の原料濃度検出機構を備えた原料気化供給装置。
- 原料濃度演算部10にソースタンク内の原料ガスGのコンバージョンファクター及びキャリアガスGKのコンバージョンファクターの各データの記憶装置を設けるようにした請求項3に記載の原料濃度検出機構を備えた原料気化供給装置。
- 自動圧力調整装置8の下流側にマスフローメータ9を設けるようにした請求項1から請求項6の何れかに記載の原料濃度検出機構を備えた原料気化供給装置。
- 自動圧力調整装置8の上流側にマスフローメータ9を設けるようにした請求項1から請求項6の何れかに記載の原料濃度検出機構を備えた原料気化供給装置。
- 自動圧力調整装置8が、温度検出器T、圧力検出器P、圧力検出器Pより下流側に設けられたコントロールバルブ8a、圧力演算部8bを備えた圧力調整装置である、請求項1から請求項6の何れかに記載の原料濃度検出機構を備えた原料気化供給装置。
- 圧力検出器Pとコントロールバルブ8aとの間にマスフローメータ9を設けるようにした請求項9に記載の原料濃度検出機構を備えた原料気化供給装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/343,226 US9631777B2 (en) | 2011-09-06 | 2012-07-17 | Raw material vaporizing and supplying apparatus equipped with raw material concentration |
CN201280043162.2A CN103797563B (zh) | 2011-09-06 | 2012-07-17 | 具备原料浓度检测结构的原料气化供给装置 |
KR1020147005952A KR101525142B1 (ko) | 2011-09-06 | 2012-07-17 | 원료 농도 검출 기구를 구비한 원료 기화 공급 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-194285 | 2011-09-06 | ||
JP2011194285A JP5647083B2 (ja) | 2011-09-06 | 2011-09-06 | 原料濃度検出機構を備えた原料気化供給装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013035232A1 true WO2013035232A1 (ja) | 2013-03-14 |
Family
ID=47831713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/004559 WO2013035232A1 (ja) | 2011-09-06 | 2012-07-17 | 原料濃度検出機構を備えた原料気化供給装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9631777B2 (ja) |
JP (1) | JP5647083B2 (ja) |
KR (1) | KR101525142B1 (ja) |
CN (1) | CN103797563B (ja) |
TW (1) | TWI482876B (ja) |
WO (1) | WO2013035232A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014145115A (ja) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | 原料ガス供給装置、成膜装置、流量の測定方法及び記憶媒体 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9243325B2 (en) | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
JP5548292B1 (ja) * | 2013-05-30 | 2014-07-16 | 株式会社堀場エステック | 加熱気化システムおよび加熱気化方法 |
JP6627474B2 (ja) * | 2015-09-30 | 2020-01-08 | 東京エレクトロン株式会社 | 原料ガス供給装置、原料ガス供給方法及び記憶媒体 |
US10256101B2 (en) * | 2015-09-30 | 2019-04-09 | Tokyo Electron Limited | Raw material gas supply apparatus, raw material gas supply method and storage medium |
US10852282B2 (en) * | 2015-12-14 | 2020-12-01 | Hitachi Metals, Ltd. | System and method for determining a concentration of a constituent gas in a gas stream using pressure measurements |
US10295518B2 (en) * | 2015-12-14 | 2019-05-21 | Hitachi Metals, Ltd. | System and method for detecting concentration of a gas in a gas stream |
JP6706121B2 (ja) * | 2016-03-30 | 2020-06-03 | 株式会社フジキン | 圧力制御装置および圧力制御システム |
CN106011775B (zh) * | 2016-06-29 | 2018-09-07 | 中国工程物理研究院激光聚变研究中心 | 超薄自支撑聚合物薄膜的制备方法 |
CN105887046B (zh) * | 2016-06-29 | 2018-07-31 | 中国工程物理研究院激光聚变研究中心 | 激光诱导cvd设备 |
JP6600854B2 (ja) * | 2016-08-24 | 2019-11-06 | 株式会社フジキン | 圧力式流量制御装置、その流量算出方法および流量制御方法 |
JP6938036B2 (ja) * | 2016-09-28 | 2021-09-22 | 株式会社フジキン | 濃度検出方法および圧力式流量制御装置 |
JP6948803B2 (ja) * | 2017-03-02 | 2021-10-13 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法及び成膜方法 |
JP6914063B2 (ja) * | 2017-03-10 | 2021-08-04 | 株式会社堀場エステック | ガス制御システム、該ガス制御システムを備えた成膜装置、該ガス制御システムに用いるプログラム及びガス制御方法。 |
JP6811147B2 (ja) * | 2017-06-23 | 2021-01-13 | 東京エレクトロン株式会社 | ガス供給系を検査する方法 |
CN109423622B (zh) * | 2017-08-29 | 2020-10-13 | 胜高股份有限公司 | 气体供给装置、气体供给方法 |
US20200297982A1 (en) * | 2017-11-20 | 2020-09-24 | The Regents Of The University Of Michigan | Digital external ventricular drain with integrated intracranial pressure monitor and cerebral spinal fluid monitor/pressure regulator |
PL239633B1 (pl) * | 2018-02-14 | 2021-12-20 | Politechnika Lodzka | Układ do zasilania w pary prekursora reaktorów do nakładania powłok metodami próżniowymi |
JP7129798B2 (ja) * | 2018-03-16 | 2022-09-02 | 東京エレクトロン株式会社 | 流量制御方法及び成膜装置 |
US10914521B2 (en) * | 2019-01-24 | 2021-02-09 | Versum Materials Us, Llc | System and method for drying and analytical testing of containers |
JP7356237B2 (ja) * | 2019-03-12 | 2023-10-04 | 株式会社堀場エステック | 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム |
CN112144038B (zh) * | 2019-06-27 | 2023-06-27 | 张家港恩达通讯科技有限公司 | 一种用于MOCVD设备GaAs基外延掺杂源供给系统 |
CN110331382A (zh) * | 2019-07-04 | 2019-10-15 | 暨南大学 | 液态反应溶液微流注入式真空气相沉积装置及方法 |
CN110836946B (zh) * | 2019-11-19 | 2024-03-29 | 中国科学技术大学 | 一种可定量及可控制蒸气浓度的鼓泡装置及浓度测量方法 |
KR20210063564A (ko) * | 2019-11-25 | 2021-06-02 | 삼성전자주식회사 | 기판 처리 장치 |
US11873916B2 (en) * | 2020-06-29 | 2024-01-16 | Fujikin Incorporated | Fluid control device, fluid supply system, and fluid supply method |
CN112538615A (zh) * | 2020-11-16 | 2021-03-23 | 武汉新芯集成电路制造有限公司 | 一种液态源存储系统 |
DE102021117457A1 (de) * | 2021-07-06 | 2023-01-12 | Aixtron Se | Verdampfungsquelle für einen CVD-Reaktor |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104155A (ja) * | 1992-09-22 | 1994-04-15 | M C Electron Kk | 半導体製造プロセスにおける中間制御装置 |
JP2001258184A (ja) * | 2000-03-09 | 2001-09-21 | Fuji Xerox Co Ltd | 自己電力供給型カード型情報記録媒体、カード型情報記録媒体入出力装置、電力供給方法、及び通信方法 |
JP2003286573A (ja) * | 2002-03-27 | 2003-10-10 | Horiba Ltd | 薄膜堆積方法とその装置および薄膜堆積方法に用いる混合ガス供給装置並びに薄膜堆積方法に用いる赤外線ガス分析計 |
JP2004091917A (ja) * | 2002-07-10 | 2004-03-25 | Tokyo Electron Ltd | 成膜装置及びこれに使用する原料供給装置、ガス濃度測定方法 |
JP2004256864A (ja) * | 2003-02-26 | 2004-09-16 | Benesol Inc | Mocvd装置における原料供給フィードバック制御システム |
JP2007250803A (ja) * | 2006-03-15 | 2007-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2009076807A (ja) * | 2007-09-25 | 2009-04-09 | Fujikin Inc | 半導体製造装置用ガス供給装置 |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4393013A (en) | 1970-05-20 | 1983-07-12 | J. C. Schumacher Company | Vapor mass flow control system |
JPS60244333A (ja) | 1984-05-21 | 1985-12-04 | Sumitomo Electric Ind Ltd | 原料液補給装置 |
US4787254A (en) | 1987-02-20 | 1988-11-29 | Briggs Technology, Inc. | Mass flow meter |
JP2538042B2 (ja) | 1989-03-29 | 1996-09-25 | 株式会社エステック | 有機金属化合物の気化供給方法とその装置 |
JPH0472717A (ja) * | 1990-07-13 | 1992-03-06 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
US5288325A (en) | 1991-03-29 | 1994-02-22 | Nec Corporation | Chemical vapor deposition apparatus |
JP2893148B2 (ja) | 1991-10-08 | 1999-05-17 | 東京エレクトロン株式会社 | 処理装置 |
JPH07118862A (ja) * | 1993-10-19 | 1995-05-09 | Hitachi Electron Eng Co Ltd | Cvd装置の反応ガス濃度制御方法 |
US5451258A (en) | 1994-05-11 | 1995-09-19 | Materials Research Corporation | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber |
JP3291161B2 (ja) | 1995-06-12 | 2002-06-10 | 株式会社フジキン | 圧力式流量制御装置 |
JP3580645B2 (ja) | 1996-08-12 | 2004-10-27 | 忠弘 大見 | 圧力式流量制御装置 |
US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
US6205409B1 (en) | 1998-06-26 | 2001-03-20 | Advanced Micro Devices, Inc. | Predictive failure monitoring system for a mass flow controller |
JP3522544B2 (ja) | 1998-08-24 | 2004-04-26 | 忠弘 大見 | 流体可変型流量制御装置 |
JP4439030B2 (ja) | 1999-04-01 | 2010-03-24 | 東京エレクトロン株式会社 | 気化器、処理装置、処理方法、及び半導体チップの製造方法 |
US6210482B1 (en) | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
TW466593B (en) | 1999-04-27 | 2001-12-01 | Tokyo Electron Ltd | CVD TiN plug formation from titanium halide precursors |
US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
GB9929279D0 (en) | 1999-12-11 | 2000-02-02 | Epichem Ltd | An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites |
JP2001313288A (ja) | 2000-04-28 | 2001-11-09 | Ebara Corp | 原料ガス供給装置 |
US6539968B1 (en) | 2000-09-20 | 2003-04-01 | Fugasity Corporation | Fluid flow controller and method of operation |
US6564824B2 (en) | 2001-04-13 | 2003-05-20 | Flowmatrix, Inc. | Mass flow meter systems and methods |
JP2003013233A (ja) | 2001-07-04 | 2003-01-15 | Horiba Ltd | 液体原料気化供給装置 |
US6656282B2 (en) | 2001-10-11 | 2003-12-02 | Moohan Co., Ltd. | Atomic layer deposition apparatus and process using remote plasma |
US6701066B2 (en) | 2001-10-11 | 2004-03-02 | Micron Technology, Inc. | Delivery of solid chemical precursors |
JP4082901B2 (ja) | 2001-12-28 | 2008-04-30 | 忠弘 大見 | 圧力センサ、圧力制御装置及び圧力式流量制御装置の温度ドリフト補正装置 |
JP2003323217A (ja) | 2002-05-01 | 2003-11-14 | Stec Inc | 流量制御システム |
CN101109470A (zh) | 2002-07-19 | 2008-01-23 | 诚实公司 | 液体流动控制器和精密分配设备及系统 |
JP4137666B2 (ja) | 2003-02-17 | 2008-08-20 | 株式会社堀場エステック | マスフローコントローラ |
JP2004256764A (ja) * | 2003-02-27 | 2004-09-16 | Denki Kagaku Kogyo Kk | ポリビニルアセタール樹脂と製造方法 |
JP4298476B2 (ja) | 2003-11-14 | 2009-07-22 | 株式会社フジキン | 流体制御装置 |
US20050221004A1 (en) | 2004-01-20 | 2005-10-06 | Kilpela Olli V | Vapor reactant source system with choked-flow elements |
JP4086057B2 (ja) | 2004-06-21 | 2008-05-14 | 日立金属株式会社 | 質量流量制御装置及びこの検定方法 |
US7204158B2 (en) | 2004-07-07 | 2007-04-17 | Parker-Hannifin Corporation | Flow control apparatus and method with internally isothermal control volume for flow verification |
JP4856905B2 (ja) | 2005-06-27 | 2012-01-18 | 国立大学法人東北大学 | 流量レンジ可変型流量制御装置 |
JP4866682B2 (ja) | 2005-09-01 | 2012-02-01 | 株式会社フジキン | 圧力センサを保有する流量制御装置を用いた流体供給系の異常検出方法 |
US20070254093A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor with concentration-monitor feedback |
JP4605790B2 (ja) | 2006-06-27 | 2011-01-05 | 株式会社フジキン | 原料の気化供給装置及びこれに用いる圧力自動調整装置。 |
US7640078B2 (en) | 2006-07-05 | 2009-12-29 | Advanced Energy Industries, Inc. | Multi-mode control algorithm |
US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
DE102007011589A1 (de) | 2007-03-08 | 2008-09-11 | Schott Ag | Fördereinrichtung für Precursor |
JP5050739B2 (ja) | 2007-08-31 | 2012-10-17 | 住友化学株式会社 | 有機金属化合物供給容器 |
US7874208B2 (en) | 2007-10-10 | 2011-01-25 | Brooks Instrument, Llc | System for and method of providing a wide-range flow controller |
US20090214777A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
JP5461786B2 (ja) | 2008-04-01 | 2014-04-02 | 株式会社フジキン | 気化器を備えたガス供給装置 |
KR101578220B1 (ko) * | 2008-10-31 | 2015-12-16 | 가부시키가이샤 호리바 세이샤쿠쇼 | 재료가스 농도 제어 시스템 |
JP2010109303A (ja) * | 2008-10-31 | 2010-05-13 | Horiba Ltd | 材料ガス濃度制御装置 |
JP5281363B2 (ja) * | 2008-10-31 | 2013-09-04 | 株式会社堀場製作所 | 材料ガス濃度制御システム |
JP2010153741A (ja) | 2008-12-26 | 2010-07-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
US8151814B2 (en) | 2009-01-13 | 2012-04-10 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
JP5787488B2 (ja) | 2009-05-28 | 2015-09-30 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP4941514B2 (ja) | 2009-06-30 | 2012-05-30 | 東京エレクトロン株式会社 | 処理ガス供給装置及び成膜装置 |
TWI435196B (zh) | 2009-10-15 | 2014-04-21 | Pivotal Systems Corp | 氣體流量控制方法及裝置 |
JP5419276B2 (ja) * | 2009-12-24 | 2014-02-19 | 株式会社堀場製作所 | 材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム |
JP5562712B2 (ja) | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | 半導体製造装置用のガス供給装置 |
-
2011
- 2011-09-06 JP JP2011194285A patent/JP5647083B2/ja active Active
-
2012
- 2012-07-17 CN CN201280043162.2A patent/CN103797563B/zh not_active Expired - Fee Related
- 2012-07-17 KR KR1020147005952A patent/KR101525142B1/ko active IP Right Grant
- 2012-07-17 WO PCT/JP2012/004559 patent/WO2013035232A1/ja active Application Filing
- 2012-07-17 US US14/343,226 patent/US9631777B2/en active Active
- 2012-07-30 TW TW101127436A patent/TWI482876B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104155A (ja) * | 1992-09-22 | 1994-04-15 | M C Electron Kk | 半導体製造プロセスにおける中間制御装置 |
JP2001258184A (ja) * | 2000-03-09 | 2001-09-21 | Fuji Xerox Co Ltd | 自己電力供給型カード型情報記録媒体、カード型情報記録媒体入出力装置、電力供給方法、及び通信方法 |
JP2003286573A (ja) * | 2002-03-27 | 2003-10-10 | Horiba Ltd | 薄膜堆積方法とその装置および薄膜堆積方法に用いる混合ガス供給装置並びに薄膜堆積方法に用いる赤外線ガス分析計 |
JP2004091917A (ja) * | 2002-07-10 | 2004-03-25 | Tokyo Electron Ltd | 成膜装置及びこれに使用する原料供給装置、ガス濃度測定方法 |
JP2004256864A (ja) * | 2003-02-26 | 2004-09-16 | Benesol Inc | Mocvd装置における原料供給フィードバック制御システム |
JP2007250803A (ja) * | 2006-03-15 | 2007-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2009076807A (ja) * | 2007-09-25 | 2009-04-09 | Fujikin Inc | 半導体製造装置用ガス供給装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014145115A (ja) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | 原料ガス供給装置、成膜装置、流量の測定方法及び記憶媒体 |
Also Published As
Publication number | Publication date |
---|---|
TW201319305A (zh) | 2013-05-16 |
US9631777B2 (en) | 2017-04-25 |
CN103797563A (zh) | 2014-05-14 |
JP5647083B2 (ja) | 2014-12-24 |
KR20140046475A (ko) | 2014-04-18 |
JP2013055303A (ja) | 2013-03-21 |
CN103797563B (zh) | 2016-08-31 |
KR101525142B1 (ko) | 2015-06-03 |
US20140299206A1 (en) | 2014-10-09 |
TWI482876B (zh) | 2015-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5647083B2 (ja) | 原料濃度検出機構を備えた原料気化供給装置 | |
JP2017076800A (ja) | ガス制御システム、及び、ガス制御システム用プログラム | |
CN101760727B (zh) | 材料气体浓度控制装置 | |
KR101052156B1 (ko) | 가스 공급 방법 및 가스 공급 장치 | |
JP5949586B2 (ja) | 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体 | |
JP5652960B2 (ja) | 原料気化供給装置 | |
TWI525734B (zh) | And a raw material gas supply device for a semiconductor manufacturing apparatus | |
US11631596B2 (en) | Concentration control apparatus, source consumption quantity estimation method, and program recording medium on which a program for a concentration control apparatus is recorded | |
WO2012014375A1 (ja) | ガス供給装置用流量制御器の校正方法及び流量計測方法 | |
US20090183548A1 (en) | Method and apparatus for in situ testing of gas flow controllers | |
CN101724828A (zh) | 材料气体浓度控制系统 | |
JP2007244946A (ja) | 混合ガス供給システム | |
WO2018062270A1 (ja) | 濃度検出方法および圧力式流量制御装置 | |
KR20140097011A (ko) | 원료 가스 공급 장치, 성막 장치, 유량의 측정 방법 및 기억 매체 | |
JP2006241516A (ja) | 混合ガスによる薄膜作製方法とその装置 | |
US8571817B2 (en) | Integrated vapor delivery systems for chemical vapor deposition precursors | |
US8925481B2 (en) | Systems and methods for measuring, monitoring and controlling ozone concentration | |
JPS61277030A (ja) | 真空計校正装置 | |
JPH0642938B2 (ja) | 気化ガスの流量制御装置 | |
JPS59185772A (ja) | 高融点金属化合物における蒸発ガスの流量制御装置 | |
US20230285911A1 (en) | Facility and method for distributing a gas mixture for doping silicon wafers | |
JP2023130036A (ja) | 推定装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12830297 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20147005952 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14343226 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12830297 Country of ref document: EP Kind code of ref document: A1 |