WO2012077827A1 - 太陽電池基板用鋼箔、太陽電池基板、太陽電池およびそれ等の製造方法 - Google Patents

太陽電池基板用鋼箔、太陽電池基板、太陽電池およびそれ等の製造方法 Download PDF

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WO2012077827A1
WO2012077827A1 PCT/JP2011/078981 JP2011078981W WO2012077827A1 WO 2012077827 A1 WO2012077827 A1 WO 2012077827A1 JP 2011078981 W JP2011078981 W JP 2011078981W WO 2012077827 A1 WO2012077827 A1 WO 2012077827A1
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solar cell
steel foil
cell substrate
substrate according
steel
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PCT/JP2011/078981
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English (en)
French (fr)
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裕弘 山口
本田 充孝
西山 直樹
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Jfeスチール株式会社
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=46207304&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2012077827(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Jfeスチール株式会社 filed Critical Jfeスチール株式会社
Priority to EP11846119.3A priority Critical patent/EP2650059A4/en
Priority to US13/992,846 priority patent/US20140011044A1/en
Priority to CN201180058623.9A priority patent/CN103249502B/zh
Priority to KR1020137017635A priority patent/KR101661019B1/ko
Publication of WO2012077827A1 publication Critical patent/WO2012077827A1/ja

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B3/00Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • B21B3/02Rolling special iron alloys, e.g. stainless steel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/40Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling foils which present special problems, e.g. because of thinness
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    • C21D1/26Methods of annealing
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    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
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    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/0221Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the working steps
    • C21D8/0236Cold rolling
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    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/0247Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the heat treatment
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    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
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    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/04Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips to produce plates or strips for deep-drawing
    • C21D8/0447Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips to produce plates or strips for deep-drawing characterised by the heat treatment
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    • C21D9/00Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • C21D9/46Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for sheet metals
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C38/004Very low carbon steels, i.e. having a carbon content of less than 0,01%
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    • C22C38/04Ferrous alloys, e.g. steel alloys containing manganese
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    • C22C38/18Ferrous alloys, e.g. steel alloys containing chromium
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    • C22C38/20Ferrous alloys, e.g. steel alloys containing chromium with copper
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    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/18Ferrous alloys, e.g. steel alloys containing chromium
    • C22C38/40Ferrous alloys, e.g. steel alloys containing chromium with nickel
    • C22C38/44Ferrous alloys, e.g. steel alloys containing chromium with nickel with molybdenum or tungsten
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D2211/00Microstructure comprising significant phases
    • C21D2211/005Ferrite
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    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/04Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips to produce plates or strips for deep-drawing
    • C21D8/0478Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips to produce plates or strips for deep-drawing involving a particular surface treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12431Foil or filament smaller than 6 mils

Definitions

  • the present invention relates to a steel foil for solar cell substrate, in particular, a steel foil for solar cell substrate having a thickness of 20 to 200 ⁇ m.
  • Patent Documents 1 to 3 and the like have a brightness of 1 mm or less from the viewpoint of strength and chemical resistance.
  • a stainless steel plate (for example, SUS430) after annealing has been proposed.
  • SUS430 stainless steel plate
  • the substrate can be handled in a coil state, so that the solar cell is a continuous process called a roll-to-roll method that is advantageous for mass production. It is starting to be manufactured.
  • a stainless steel foil having a thickness of about 20 to 200 ⁇ m has been studied in order to reduce the cost (cost reduction).
  • Patent Document 4 discloses a back-surface reflective layer that has excellent insulation properties and thermal stability, and has a concavo-convex texture structure as a solar cell. There has been proposed a stainless steel foil coated with a silica-based inorganic polymer (sol-gel silica glass).
  • An object of the present invention is to provide a steel foil for a solar cell substrate that hardly causes buckling even when applied to a roll-to-roll type continuous process, and a method for manufacturing the same.
  • the present inventors have found that steel containing 7 to 40% by mass of Cr and having a tensile strength in the direction perpendicular to the rolling direction of 930 MPa or more. It has been found that using foil is effective.
  • the present invention has been made on the basis of such knowledge, and provides a steel foil for a solar cell substrate containing 7 to 40% by mass of Cr and having a tensile strength in a direction perpendicular to the rolling direction of 930 MPa or more. To do.
  • the tensile strength in the direction perpendicular to the rolling direction is 1000 MPa or more, or the microstructure remains the rolled structure.
  • the linear expansion coefficient at 0 to 100 ° C. is preferably 12.0 ⁇ 10 ⁇ 6 / ° C. or less
  • the microstructure is preferably a structure mainly composed of a ferrite structure.
  • the steel foil for solar cell substrate according to the present invention contains 7 to 40% by mass of Cr, and after bright annealing or annealing with a thickness of 1 mm or less, the steel plate after pickling is at a rolling reduction of 50% or more. It can be manufactured by cold rolling.
  • the steel sheet is cold-rolled at a rolling reduction of 70% or more, or after bright annealing or annealing with a ferrite structure (ferrite structure), and after pickling, or after cold rolling, an inert gas atmosphere (inert It is preferable to perform a heat treatment at 400 to 700 ° C. in a gas atmosphere).
  • the present invention also provides a solar cell substrate characterized by using the above-described steel foil for solar cell substrate, and a solar cell characterized by using this solar cell substrate.
  • the present invention further provides a method for manufacturing a solar cell, wherein the solar cell substrate is manufactured by a roll-to-roll continuous process. At this time, it is preferable that the roll-to-roll system continuous process includes the steps of cleaning, back electrode sputtering, solar cell treatment, selenization treatment, buffer layer formation, top electrode sputtering, electrode formation, and slitting.
  • the present invention makes it possible to produce a steel foil for a solar cell substrate that is less likely to buckle even when applied to a roll-to-roll type continuous process.
  • the steel foil used as a base material is not particularly restricted as long as it has the corrosion resistance required for the substrate of the solar cell.
  • the Cr content is less than 7% by mass, the corrosion resistance during long-term use is insufficient, and there is a problem of corrosion of the substrate.
  • the Cr content exceeds 40% by mass, an intermediate product (partly-finished product) in steel foil production is present.
  • the Cr amount needs to be 7 to 40% by mass.
  • Such steels include SUS430 (17% Cr steel), SUS447J1 (30% Cr-2% Mo steel), 9% Cr steel, 20% Cr-5% Al steel, SUS304 (18% Cr-8% Ni steel). Etc.
  • regulates the component composition of steel means the mass%.
  • C 0.12% or less C combines with Cr in steel, the corrosion resistance (corrosion resistance check) of the no al Sutame lowered, but low enough desired, remarkable reduction in corrosion resistance equal to or less than 0.12% I will not let you. For this reason, 0.12% or less is preferable, More preferably, it is 0.04% or less.
  • Si 2.5% or less Si is an element used for deoxidation, but if contained excessively, ductility is lowered, so 2.5% or less is preferable. More preferably, it is 1.0% or less.
  • Mn 1.0% or less Since Mn combines with S to form MnS and lowers the corrosion resistance, 1.0% or less is preferable. More preferably, it is 0.8% or less.
  • S 0.030% or less As described above, S is combined with Mn to form MnS and lowers the corrosion resistance, so 0.030% or less is preferable. More preferably, it is 0.008% or less.
  • P 0.050% or less P lowers the ductility, so it is desirable that it is lower.
  • 0.050% or less is preferable, More preferably, it is 0.040% or less.
  • Cr 7% or more, 40% or less If the Cr amount is less than 7% by mass, the corrosion resistance during long-term use is insufficient, and there is a problem of corrosion of the substrate. If it exceeds 40% by mass, it is an intermediate product in steel foil production. There is a problem that the toughness of the hot-rolled steel sheet is remarkably lowered and the production line cannot be passed. Therefore, the Cr amount needs to be 7 to 40% by mass.
  • N 0.05% or less N is combined with Cr in the steel to cause a decrease in corrosion resistance. Therefore, the lower the content, the better. However, if it is 0.05% or less, the corrosion resistance is not significantly reduced. For this reason, 0.05% or less is preferable. More preferably, it is 0.015% or less.
  • Mo 0.02% or more and 4.0% or less Mo is an element effective for improving the corrosion resistance of steel foil, particularly localized corrosion, and in order to obtain this effect, 0.02% % Or more is preferable. On the other hand, if the content exceeds 4.0%, the ductility is remarkably lowered, so the upper limit is preferably 4.0%. More preferably, it is 2.0% or less.
  • Ni, Cu, V, and W can each be contained at 1.0% or less for the purpose of improving the corrosion resistance.
  • Ca, Mg, REM (Rare Earth Metals), and B may be contained in each amount of 0.1% or less.
  • the balance is Fe and inevitable impurities.
  • O (oxygen) is preferably 0.02% or less.
  • a coiled steel foil for a substrate for example, cleaning-back electrode sputtering (sputtering Mo back contact) -solar cell treatment (light absorption) Layer formation (deposite absorber layer)-selenization-buffer layer formation (Cds buffer layer)-top electrode sputtering (depositite strotrode)-electrode formation (deposite strotropel) It is necessary to process in many steps, so the steel foil for substrates Is also subjected to bending and unbending processing, so that buckling is likely to occur, especially when the tensile strength in the direction perpendicular to the rolling direction of the steel foil is small (soft).
  • the tensile strength in the direction perpendicular to the rolling direction of the substrate steel foil is preferably 930 MPa or more. It is effective to increase the stiffness of the foil by setting it to 1000 MPa or more. Further, it is preferable that the microstructure remains the rolled structure as shown in FIGS. 2A to 2C.
  • the rolled structure shown in FIGS. 2A to 2C means a structure that has been cold-rolled or subjected to heat treatment at 400 to 700 ° C. for 0 to 5 minutes in an inert gas atmosphere. This is a structure in which a part or all of the structure remains as flat grains without being recrystallized by heat treatment.
  • the volume ratio of the rolled structure is 50 vol% or more, preferably 90 vol% or more.
  • FIG. 2D shows an annealed material (recrystallized material), and the aspect ratio (major axis / minor axis) approaches 1 when recrystallized.
  • the microstructures in FIGS. 2A to 2D are microscopically observed at 1000 times after aqua regia etching.
  • a steel foil such as SUS304 having a linear expansion coefficient at 0 to 100 ° C. exceeding 12.0 ⁇ 10 ⁇ 6 / ° C. is used as a substrate, a Cu (In 1-X Ga X ) Se 2 thin film (hereinafter referred to as a CIGS thin film).
  • the linear expansion coefficient at 0 to 100 ° C. is desirably 12.0 ⁇ 10 ⁇ 6 / ° C. or less.
  • mainly ferrite structures such as SUS430 and SUH409L and ferrite structures such as 9 mass% Cr steel having a ferrite structure are mainly used. It is preferable to make it an organization.
  • the structure mainly composed of a ferrite structure means that the area ratio of ferrite is 95% or more.
  • the steel foil for solar cell substrate according to the present invention contains 7 to 40% by mass of Cr, and after bright annealing or annealing with a thickness of 1 mm or less, a steel plate after pickling It can be manufactured by cold rolling at a reduction rate of 50% or more. This is because, as shown in FIG. 1, with SUS430 or the like, a tensile strength of 930 MPa or more can be obtained if the rolling reduction is 50% or more. If the rolling reduction is 70% or more, a tensile strength of 1000 MPa or more can be obtained.
  • ferritic stainless steel such as SUS430 and SUH409L, 9 mass% Cr steel having a ferrite structure
  • a steel plate after bright annealing having a ferrite structure such as, or after annealing and pickling may be used.
  • N 2 gas, AX gas also referred to as ammonia decomposition gas
  • NH 3 cracking gas 75 vol% H 2 +25 vol% N
  • the heat treatment temperature is less than 400 ° C., such an effect is not exhibited. More preferably, it is 400 to 600 ° C.
  • SUS430 (16% Cr) having the composition shown in Table 1 and 9% Cr steel, cold-rolled steel sheet having a thickness of 0.05 to 0.3 mm after bright annealing, and cold-rolled at the rolling reduction shown in Table 2
  • a steel foil having a thickness of 30 to 50 ⁇ m, and after degreasing, as it is, or for some steel foils, after heat treatment at a heat treatment temperature shown in Table 2 in an N 2 gas atmosphere, multi-source deposition or It processed by the continuous process of the roll-to-Roll system of the solar cell which has the process of sputtering.
  • SUS430, 11% Cr-1.5% Si steel and SUS304 having the composition shown in Table 1 are cold-rolled at a reduction ratio shown in Table 3 to form a steel foil having a thickness of 30 to 50 ⁇ m, and after degreasing, as it is, or Some of the steel foils were treated by a roll-to-roll continuous process of solar cells having a multi-source deposition or sputtering process after heat treatment at a heat treatment temperature shown in Table 3 in an N 2 gas atmosphere. Then, a tensile test perpendicular to the rolling direction was taken from the steel foil after cold rolling or heat treatment, and the tensile strength and elongation were measured, and the Vickers hardness (Hv) of the steel foil was measured.
  • Hv Vickers hardness

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Abstract

太陽電池のRoll-to-Roll方式の連続プロセスに適用しても、座屈の起こりにくい太陽電池基板用鋼箔およびその製造方法、並びに太陽電池基板、太陽電池およびその製造方法を提供する。具体的には、Crを7~40質量%含み、圧延方向に直角方向の引張強度が930MPa以上であることを特徴とする太陽電池基板用鋼箔である。

Description

太陽電池基板用鋼箔、太陽電池基板、太陽電池およびそれ等の製造方法
 本発明は、太陽電池基板用鋼箔(steel foil for solar cell substrate)、特に、厚さ20~200μmの太陽電池基板用鋼箔に関する。
 従来より、太陽電池基板用材料としてはガラス(glass)が使用されているが、近年、特許文献1~3などには、強度や耐薬品性(chemical resistance)の観点から厚さ1mm以下の光輝焼鈍(bright annealing)後のステンレス鋼板(例えば、SUS430)が提案されている。このようなステンレス鋼板を基板に用いると、基板をコイル(coil)の状態で扱うことが可能になるので、太陽電池は大量生産に有利なRoll−to−Roll方式と呼ばれる連続プロセス(continual process)で製造されるようになってきている。最近では、コストダウン(cost reduction)を図るために、厚さ20~200μm程度のステンレス箔が検討されている。例えば、特許文献4には、絶縁性(insulation properties)や熱安定性(thermal stability)に優れ、太陽電池として凹凸テクスチャ構造(concave−convex texture structure)を有する裏面反射層(reflective layer of back side)が作製可能なシリカ系無機ポリマー(sol−gel silica glass)で被覆されたステンレス箔が提案されている。
特開昭64−72571号公報 特開平5−306460号公報 特開平6−299347号公報 特開2006−270024号公報
 しかしながら、特許文献4に記載のようなステンレス箔帯をRoll−to−Roll方式の連続プロセスに適用すると箔帯に座屈(buckling)が起こり、座屈部がロール(roll)に乗り上げてシワ(wrinkle)、折れ(broken surface)、絞り(drawing)などが発生しやすいという問題がある。
 本発明は、Roll−to−Roll方式の連続プロセスに適用しても、座屈の起こりにくい太陽電池基板用鋼箔およびその製造方法を提供することを目的とする。
 本発明者らは、上記の目的を達成すべく鋭意検討を行った結果、Crを7~40質量%含み、圧延方向(rolling direction)に直角方向の引張強度(tensile strength)が930MPa以上の鋼箔を用いることが効果的であることを見出した。
 本発明は、このような知見に基づきなされたもので、Crを7~40質量%含み、圧延方向に直角方向の引張強度が930MPa以上であることを特徴とする太陽電池基板用鋼箔を提供する。
 本発明の太陽電池基板用鋼箔では、圧延方向に直角方向の引張強度が1000MPa以上であったり、ミクロ組織が圧延組織のままであることが好ましい。また、0~100℃における線膨張率が12.0×10−6/℃以下であったり、ミクロ組織がフェライト組織を主体とする組織であることが好ましい。
 本発明である太陽電池基板用鋼箔は、Crを7~40質量%含み、厚さ1mm以下の光輝焼鈍後又は焼鈍し、酸洗後の鋼板を、圧下率(rolling reduction)50%以上で冷間圧延(cold rolling)することによって製造できる。このとき、圧下率70%以上で冷間圧延したり、フェライト組織(ferrite structure)を有する光輝焼鈍後または焼鈍し、酸洗後の鋼板を用いたり、冷間圧延後、不活性ガス雰囲気(inert gas atmosphere)中で400~700℃の熱処理を施すことが好ましい。
 本発明は、また、上記の太陽電池基板用鋼箔を用いたことを特徴とする太陽電池基板や、この太陽電池基板を用いたことを特徴とする太陽電池を提供する。
 本発明は、さらに、上記の太陽電池基板を用いてRoll−to−Roll方式の連続プロセスにより製造することを特徴とする太陽電池の製造方法を提供する。このとき、Roll−to−Roll方式の連続プロセスが、クリーニング−バック電極スパッタリング−太陽電池処理−セレン化処理−バッファー層形成−トップ電極スパッタリング−電極形成−スリットの工程を含むことが好ましい。
 本発明により、Roll−to−Roll方式の連続プロセスに適用しても、座屈の起こりにくい太陽電池基板用鋼箔を製造できるようになった。
圧下率と圧延方向に直角方向の引張強度との関係を示す図である。 本発明材で、SUS430−箔厚み50μmの圧延組織のミクロ組織を示す。(圧下率83%) 本発明材で、SUS430−箔厚み50μmの700℃(不活性ガス雰囲気中)の熱処理材のミクロ組織を示す。(圧下率83%) 本発明材で、SUS430−箔厚み50μmの400℃(不活性ガス雰囲気中)の熱処理材のミクロ組織を示す。(圧下率83%) 従来材(比較材)で、SUS430−箔厚み50μmの焼鈍材(再結晶材)のミクロ組織を示す。(圧下率83%)
 1)太陽電池基板用鋼箔
 本発明において、基材として使用する鋼箔については、太陽電池の基板で必要とされる耐食性を有する限り特段の制約は無い。ただし、Cr量が7質量%未満では長期使用時の耐食性(corrosion resistance)が不足しており、基板の腐食の問題があり、40質量%を超えると鋼箔製造における中間製品(partly−finished product)である熱延鋼板(hot rolled steel sheet)の靭性(toughness)が著しく低下し、製造ライン(manufacturing line)を通板することができなくなるという問題がある。そのため、Cr量は7~40質量%にする必要がある。こうした鋼としては、SUS430(17%Cr鋼)、SUS447J1(30%Cr−2%Mo鋼)、9%Cr鋼、20%Cr−5%Al鋼、SUS304(18%Cr−8%Ni鋼)などを挙げられる。
 以下、特に好適な成分組成を示すと、次のとおりである。なお、鋼の成分組成を規定する成分%は、全て質量%を意味する。
 C:0.12%以下
Cは、鋼中のCrと結合して、耐食性(corrosion resistance)の低下をもたすため、低いほど望ましいが、0.12%以下であれば耐食性を著しく低下させることはない。このため、0.12%以下が好ましく、より好ましくは0.04%以下である。
 Si:2.5%以下
Siは、脱酸(deoxidation)に用いる元素であるが、過剰に含有されると、延性の低下をもたらすため、2.5%以下が好ましい。より好ましくは1.0%以下である。
 Mn:1.0%以下
Mnは、Sと結合してMnSを形成し、耐食性を低下させるため、1.0%以下が好ましい。より好ましくは0.8%以下である。
 S:0.030%以下
上述したとおり、Sは、Mnと結合してMnSを形成し、耐食性を低下させるため、0.030%以下が好ましい。より好ましくは0.008%以下である。
 P:0.050%以下
Pは、延性の低下をもたらすため、低いほど望ましいが、0.050%以下であれば延性を著しく低下させることはない。このため、0.050%以下が好ましく、より好ましくは0.040%以下である。
 Cr:7%以上、40%以下
Cr量が7質量%未満では長期使用時の耐食性が不足しており、基板の腐食の問題があり、40質量%を超えると鋼箔製造における中間製品である熱延鋼板の靭性が著しく低下し、製造ラインを通板することができなくなるという問題がある。そのため、Cr量は7~40質量%にする必要がある。
 以上、必須成分について説明したが、本発明では、その他にも以下に述べる元素を適宜含有させることができる。
 Nb、Ti、Zrのうちから選んだ少なくとも一種を合計で:1.0%以下
Nb、Ti、Zrはいずれも、鋼中のC、Nを炭化物や窒化物、あるいは炭窒化物として固定し、耐食性を改善するのに有用な元素である。ただし、1.0%を超えて含有すると延性(ductility)の低下が顕著となるので、これらの元素は単独添加または複合添加いずれの場合も1.0%以下に限定する。なお、これらの元素の添加効果を十分に発揮させるには、0.02%以上含有させることが好ましい。
 Al:0.20%以下
Alは、脱酸に用いられる元素であるが、過剰に含有されると延性の低下をもたらすため、0.20%以下が好ましい。より好ましくは、0.15%以下である。
 N:0.05%以下
Nは、鋼中のCrと結合して、耐食性の低下をもたらすため、低いほど望ましいが、0.05%以下であれば耐食性を著しく低下させることはない。このため、0.05%以下が好ましい。より好ましくは0.015%以下である。
 Mo:0.02%以上4.0%以下
Moは、鋼箔の耐食性、特に局部腐食性(localized corrosion)を改善するのに有効な元素であり、この効果を得るためには、0.02%以上含有させることが好ましい。一方、4.0%を超えて含有すると延性の低下が顕著となるので、上限は4.0%が好ましい。より好ましくは2.0%以下である。
 また、その他にも、耐食性の改善を目的として、Ni、Cu、V、Wをそれぞれ1.0%以下で含有させることもできる。さらに熱間加工性(hot workability)の向上を目的として、Ca、Mg、REM(Rare Earth Metals)、Bをそれぞれ0.1%以下で含有させることもできる。
 残部は、Feおよび不可避的不純物である。不可避的不純物のうちO(酸素)は、0.02%以下であることが好ましい。
 太陽電池をRoll−to−Roll方式の連続プロセスにより製造するには、コイル状の基板用鋼箔を、例えば、クリーニング(cleaning)−バック電極スパッタリング(sputtering Mo back contact)−太陽電池処理(光吸収層形成(deposite absorber layer)−セレン化処理(selenization)−バッファー層形成(Cds buffer layer(chemical bath deposition))−トップ電極スパッタリング(sputtertop elctrode)−電極形成(deposite front electrode)−スリット(slitting)といった多くの工程で処理する必要がある。そのため、基板用鋼箔はロールによって何回も曲げ(bend)・曲げ戻し(unbend)の加工を受けるので座屈が起こりやすい状況に置かれている。特に、鋼箔の圧延方向に直角方向の引張強度が小さい(軟らかい)とロールを通過する時に圧延方向に平行な座屈によるシワ(バックリング)が発生する。この座屈の防止には、上述したように、基板用鋼箔の圧延方向に直角方向の引張強度を930MPa以上、好ましくは1000MPa以上にして箔の剛性(stiffness)を上げることが効果的である。
 また、ミクロ組織は、図2A~図2Cに示すような圧延組織のままであることが好ましい。ここで、図2A~図2Cに示す圧延組織のままとは、冷間圧延のままあるいは、不活性ガス雰囲気中で400~700℃、0~5分の熱処理を施した組織を言い、圧延組織の一部または全てが、熱処理で再結晶しないで、扁平粒のまま残存した組織であるものをいう。圧延組織の体積率は、50vol%以上、好ましくは90vol%以上である。なお、図2Dは、焼鈍材(再結晶材)を示し、再結晶してしまうとアスペクト比(長軸÷短軸)がほぼ1に近くなる。図2A~図2Dのミクロ組織は、王水エッチング後1000倍で顕微鏡観察したものである。
 さらに、SUS304などの0~100℃における線膨脹率が12.0×10−6/℃を超える鋼箔を基板に使用すると、Cu(In1−XGa)Se薄膜(以後、CIGS薄膜と呼ぶ)が基板との線膨脹率の違いで、製造中に剥離する問題が発生する。したがって、0~100℃における線膨脹率は12.0×10−6/℃以下とすることが望ましい。0~100℃における線膨脹率は12.0×10−6/℃以下とするためには、SUS430やSUH409Lなどのフェライト系ステンレス鋼、フェライト組織を有する9質量%Cr鋼などのフェライト組織を主体とする組織にすることが好ましい。フェライト組織を主体とする組織とは、フェライトの面積率が、95%以上であることを意味する。残部の組織は、オーステナイト組織、マルテンサイト組織の1種以上が、5%未満である。
 2)太陽電池基板用鋼箔の製造方法
 本発明である太陽電池基板用鋼箔は、Crを7~40質量%含み、厚さ1mm以下の光輝焼鈍後又は焼鈍し、酸洗後の鋼板を、圧下率50%以上で冷間圧延することによって製造できる。これは、図1に示すように、SUS430などでは圧下率を50%以上にすれば930MPa以上の引張強度が得られるためである。圧下率を70%以上にすれば1000MPa以上の引張強度が得られる。
 また、0~100℃における線膨脹率を12.0×10−6/℃以下にする鋼箔にするためには、SUS430やSUH409Lなどのフェライト系ステンレス鋼、フェライト組織を有する9質量%Cr鋼などのフェライト組織を有する光輝焼鈍後又は焼鈍し、酸洗後の鋼板を用いればよい。
 また、冷間圧延ままでも本発明の目的を達成できるが、冷間圧延後、Nガス、AXガス(あるいは、アンモニア分解ガスとも称す)(NH cracking gas)(75vol%H+25vol%N)、Hガス、HNガス(5vol%H+95vol%N)、Arガスなどの不活性ガス雰囲気中で400~700℃、0~5分の熱処理を施すと、時効硬化(age−hardening)によると考えられるが、更なる高強度化を図ることができ、座屈の防止により一層効果的である。熱処理温度(heat treatment temperature)が400℃未満ではこうした効果が発現されず、700℃を超えると軟化し、930MPa以上の引張強度が得られなくなる。さらに好ましくは、400~600℃である。
 表1に示す組成のSUS430(16%Cr)と9%Cr鋼の厚さ0.05~0.3mmの光輝焼鈍後の冷延鋼板を用い、表2に示す圧下率で冷間圧延し厚さ30~50μmの鋼箔とし、脱脂(degreasing)後、そのまま、あるいは一部の鋼箔についてはNガス雰囲気中で表2に示す熱処理温度で熱処理後、多元蒸着(multi−source deposition)あるいはスパッタリングの工程を有する太陽電池のRoll−to−Roll方式の連続プロセスにより処理した。そして、冷間圧延後あるいは熱処理後の鋼箔から圧延方向に直角方向の引張試験を採取し、引張強度と伸び(elongation)を、また、鋼箔のビッカース硬度(Vickers hardness)(Hv)を測定した。さらに、連続プロセスによる処理中のシワの発生状況を目視で調査した。
 結果を表2に示す。本発明例では、いずれも引張強度が930MPa以上であり、シワ発生がないことがわかる。また、冷間圧延後、本発明範囲内の熱処理温度(400~700℃)で熱処理することにより、引張強度を上昇できることがわかる。
 表1に示す組成のSUS430、11%Cr−1.5%Si鋼およびSUS304について、表3に示す圧下率で冷間圧延し、厚さ30~50μmの鋼箔とし、脱脂後、そのまま、あるいは一部の鋼箔についてはNガス雰囲気中で表3に示す熱処理温度で熱処理後、多元蒸着あるいはスパッタリングの工程を有する太陽電池のRoll−to−Roll方式の連続プロセスにより処理した。そして、冷間圧延後あるいは熱処理後の鋼箔から圧延方向に直角方向の引張試験を採取し、引張強度と伸びを、また、鋼箔のビッカース硬度(Hv)を測定した。引張強度と伸びはJIS Z 2241(1998)、HvはJIS Z 2244(1998)に準拠して測定した。さらに、連続プロセスによる処理中のシワの発生状況を目視で調査した。また、CIGS薄膜の剥離状態を目視と顕微鏡で観察した。なお、表3には、各鋼の0~100℃における線膨脹率も示してある。
 結果を表3に示す。本発明例では、いずれも引張強度が930MPa以上であり、シワ発生がないことがわかる。また、0~100℃における線膨脹率が12.0×10−6/℃以下である例では、CIGS薄膜剥離もないことがわかる
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000003

Claims (13)

  1.  Crを7~40質量%含み、圧延方向に直角方向の引張強度が930MPa以上であることを特徴とする太陽電池基板用鋼箔。
  2.  圧延方向に直角方向の引張強度が1000MPa以上であることを特徴とする請求項1に記載の太陽電池基板用鋼箔。
  3.  ミクロ組織が圧延組織のままであることを特徴とする請求項1または2に記載の太陽電池基板用鋼箔。
  4.  0~100℃における線膨張率が12.0×10−6/℃以下であることを特徴とする請求項1~3のいずれか一項に記載の太陽電池基板用鋼箔。
  5.  ミクロ組織がフェライト組織を主体とする組織であることを特徴とする請求項1~4のいずれか一項に記載の太陽電池基板用鋼箔。
  6.  Crを7~40質量%含み、厚さ1mm以下の光輝焼鈍後または焼鈍し、酸洗後の鋼板を、圧下率50%以上で冷間圧延することを特徴とする太陽電池基板用鋼箔の製造方法。
  7.  圧下率70%以上で冷間圧延することを特徴とする請求項6に記載の太陽電池基板用鋼箔の製造方法。
  8.  フェライト組織を有する光輝焼鈍後または焼鈍し、酸洗後の鋼板を用いることを特徴とする請求項6または7に記載の太陽電池基板用鋼箔の製造方法。
  9.  冷間圧延後、不活性ガス雰囲気中で400~700℃の熱処理を施すことを特徴とする請求項6から8のいずれか一項に記載の太陽電池基板用鋼箔の製造方法。
  10.  請求項1~5のいずれか一項に記載の太陽電池基板用鋼箔を用いたことを特徴とする太陽電池基板。
  11.  請求項10に記載の太陽電池基板を用いたことを特徴とする太陽電池。
  12.  請求項10に記載の太陽電池基板を用いてRoll−to−Roll方式の連続プロセスにより製造することを特徴とする太陽電池の製造方法。
  13.  Roll−to−Roll方式の連続プロセスが、クリーニング−バック電極スパッタリング−太陽電池処理−セレン化処理−バッファー層形成−トップ電極スパッタリング−電極形成−スリットの工程を含むことを特徴とする請求項12に記載の太陽電池の製造方法。
PCT/JP2011/078981 2010-12-10 2011-12-08 太陽電池基板用鋼箔、太陽電池基板、太陽電池およびそれ等の製造方法 WO2012077827A1 (ja)

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CN201180058623.9A CN103249502B (zh) 2010-12-10 2011-12-08 太阳能电池基板用钢箔、太阳能电池基板、太阳能电池和它们的制造方法
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