WO2011034145A1 - 太陽電池、太陽電池モジュールおよび太陽電池システム - Google Patents
太陽電池、太陽電池モジュールおよび太陽電池システム Download PDFInfo
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- WO2011034145A1 WO2011034145A1 PCT/JP2010/066079 JP2010066079W WO2011034145A1 WO 2011034145 A1 WO2011034145 A1 WO 2011034145A1 JP 2010066079 W JP2010066079 W JP 2010066079W WO 2011034145 A1 WO2011034145 A1 WO 2011034145A1
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- solar cell
- transparent conductive
- conductive film
- atoms
- ray diffraction
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- 239000001257 hydrogen Substances 0.000 claims abstract description 49
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 49
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 32
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000002441 X-ray diffraction Methods 0.000 claims description 51
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 description 142
- 125000004429 atom Chemical group 0.000 description 65
- 150000002431 hydrogen Chemical class 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 239000010937 tungsten Substances 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000000843 powder Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
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- 238000005259 measurement Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
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- 239000001301 oxygen Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
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- 238000007650 screen-printing Methods 0.000 description 2
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- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Definitions
- the present invention relates to a solar cell, a solar cell module, and a solar cell system.
- Solar cells are expected to be a new power source with low environmental impact because they can convert sunlight into electricity.
- solar cells in general household power generation systems, large-scale power generation plants, etc. Use is actively promoted. Under such circumstances, research and development such as higher performance are being actively conducted for the further spread of solar cells.
- the solar cell system includes, for example, one or a plurality of solar cell modules, and the solar cell module includes one solar cell or a plurality of solar cells depending on its use such as a solar cell system or an application product.
- Some batteries are formed by electrically connecting batteries in series.
- a configuration including a transparent conductive film and a collector electrode on the transparent conductive film may be used as an electrode.
- a transparent conductive film desirably has a small electrical resistance and can increase the output of the solar cell.
- a solar cell provided with a transparent conductive film a solar cell provided with a transparent conductive film made of indium oxide (ITO) containing tin (Sn) is known.
- ITO indium oxide
- Sn tin
- the transparent conductive film is also used for liquid crystal displays and the like, and for example, a transparent conductive film made of indium oxide to which cerium (Ce) is added is disclosed (for example, see Patent Document 1).
- the present invention has been made in view of the above points, and has a low electric resistance and a solar cell including a transparent conductive film capable of favorable output of the solar cell, a solar cell module including the solar cell, and a solar cell system. Is to provide.
- the solar cell which concerns on 1 aspect of this invention is a solar cell provided with the board
- the said transparent conductive film is hydrogen. And indium oxide containing cerium.
- the transparent conductive film contains hydrogen (H) and indium oxide containing cerium (Ce), the resistance of the transparent conductive film can be reduced and the output of the solar cell can be increased. Is possible.
- the solar cell module according to one aspect of the present invention includes any one of the above solar cells.
- a solar cell system includes the above-described solar cell module.
- a solar cell including a transparent conductive film capable of low electrical resistance and good output of the solar cell, a solar cell module including the solar cell, and a solar cell system.
- FIG. 1A is a top view of a solar cell according to an embodiment of the present invention
- FIG. 1B is a bottom view of the solar cell.
- FIG. 2 (a) is a schematic cross-sectional view of a solar cell according to an embodiment of the present invention along the line AA 'in FIG. 1 (a)
- FIG. 2 (b) is the surface of this solar cell. It is sectional drawing to which the vicinity was expanded.
- It is a top view of the solar cell module which concerns on one Embodiment of this invention.
- FIG. 4 is a partial cross-sectional view of a solar cell module according to an embodiment of the present invention taken along line A-A ′ of FIG. 3.
- FIGS. 1 and 2 A solar cell according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2.
- 1A is a top view of the solar cell according to the present embodiment
- FIG. 1B is a bottom view
- FIG. 2A is a schematic view of the solar cell along the line AA ′ in FIG. Sectional drawing and FIG.2 (b) are sectional drawings of this solar cell surface vicinity.
- the solar cell 1 is, for example, a double-sided light-receiving solar cell, and has a substrate 2 made of n-type single crystal silicon having a resistance of about 1 ⁇ ⁇ cm and a thickness of about 200 ⁇ m.
- the upper surface of the substrate 2 has a texture structure, and a substantially intrinsic i-type amorphous silicon layer 3 having a thickness of about 5 nm and a p-type amorphous material having a thickness of about 5 nm over substantially the entire upper surface.
- a transparent silicon film 4 and a transparent conductive film 5 having a thickness of about 100 nm are provided in this order, and a surface-side collector electrode 6 is further provided on the transparent conductive film 5.
- the back surface of the substrate 2 also has a texture structure.
- a substantially intrinsic i-type amorphous silicon layer 7 having a thickness of about 5 nm, an n-type amorphous silicon layer 8 having a thickness of about 5 nm, and a thickness of about 100 nm are provided on substantially the entire back surface of the substrate 2.
- a back-side collector electrode 10 is provided on the transparent conductive film 9.
- the solar cell 1 according to this embodiment is a so-called HIT structure solar cell including a photoelectric conversion unit with the above-described configuration.
- the texture structure of the front and back surfaces of the substrate 2 is an uneven structure having a pyramid shape with a height of several ⁇ m to several tens of ⁇ m, and each pyramid shape constitutes this pyramid shape.
- the angle ⁇ formed between the mutually facing surfaces is about 72 degrees.
- Such a texture structure can be obtained, for example, by using a single crystal silicon substrate as the substrate 2 and anisotropically etching the (100) plane of the single crystal silicon substrate.
- a large number of pyramid shapes are irregularly arranged so as to cover substantially the entire surface of the substrate 2.
- Each pyramid shape is uneven in height (size), and adjacent pyramids may partially overlap.
- the apexes and valleys of each pyramid shape may be rounded.
- the surface-side collector electrode 6 is mainly made of silver (Ag) and has a thickness of about 20 ⁇ m to 60 ⁇ m.
- the front-side collector electrode 6 is a narrow linear finger electrode 6a, 6a,... Formed in parallel with each other at a predetermined interval so as to cover substantially the entire surface of the transparent conductive film 5.
- the finger electrodes 6a, 6a,... are arranged at intervals of about 2 mm.
- the back-side collector electrode 9 is mainly made of silver (Ag) and has a thickness of about 20 ⁇ m to 60 ⁇ m.
- the back-side collector electrode 10 includes a plurality of narrow linear finger electrodes 10a, 10a, which are formed in parallel to each other at a predetermined interval so as to cover substantially the entire surface of the transparent conductive film 9. .. and two strips of bus bar electrodes 10b and 10b formed in parallel at a predetermined interval so as to be connected thereto.
- each finger electrode 10a, 10a, ... is arrange
- the transparent conductive film 5 contains hydrogen (H) and a main component containing cerium (Ce) is composed of indium oxide. That is, the transparent conductive film 5 contains hydrogen (H), cerium (Ce), In (indium) and oxygen (O), and indium oxide (H) and cerium (Ce) doped as impurities. In 2 O 3 ).
- the transparent conductive film 5 has a substantially polycrystalline structure, and has a large number of columnar structures standing so as to cover the surface of the p-type amorphous silicon layer 4. Has a part.
- the hydrogen (H) content of the transparent conductive film 5 is preferably 1.0 ⁇ 10 21 atoms / cm 3 or more, more preferably on the order of 10 21 atoms / cm 3 , and more preferably on the order of 10 21 atoms / cm 3 .
- the hydrogen content is the value of the content at the intermediate position in the film thickness direction of the transparent conductive film 5 and substantially corresponds to the average content excluding the vicinity of both surfaces of the transparent conductive film 5.
- the content concentration of hydrogen in the transparent conductive film 5 is preferably larger on the substrate 2 side than on the surface side collector electrode 6 side except near both surfaces, and gradually increases toward the substrate 2 side. Is more preferable.
- the transparent conductive film 5 has X-ray diffraction peaks of (400) orientation and (440) orientation.
- the measurement of X-ray diffraction (XRD) is an X-ray diffraction measurement of the transparent conductive film 5 on the texture structure in the solar cell 1
- the X-ray diffraction measurement of the transparent conductive film is a solar cell.
- Means the X-ray diffraction measurement of the transparent conductive film on the texture structure in (the X-ray diffraction measurement is an X-ray diffraction measurement on the texture structure before the formation of the front-side collector electrode 6 and the back-side collector electrode 10, etc. Including the case).
- the X-ray diffraction peak of the (400) orientation of the transparent conductive film 5 has a 2 ⁇ ( ⁇ : X-ray diffraction angle) of 35.31 ° to 35.41 °, preferably 35.33 ° to 35.40 °. More preferably, it is 35.36 ° to 35.38 °.
- the half width of the (400) -oriented X-ray diffraction peak of the transparent conductive film 5 is 0.10 ° to 0.30 °, preferably 0.15 ° to 0.25 °, more preferably 0. 18 ° to 0.20 °.
- the X-ray diffraction peak of (440) orientation of the transparent conductive film 5 has a 2 ⁇ ( ⁇ : X-ray diffraction angle) of 50.80 ° to 50.96 °, preferably 50.85 ° to 50.50. It is 95 °, more preferably 50.90 ° to 50.91 °.
- the full width at half maximum of the (440) -oriented X-ray diffraction peak of the transparent conductive film 5 is 0.10 to 0.35 °, preferably 0.15 ° to 0.30 °, and more preferably 0.8. It is 17 ° to 0.22 °.
- the content of cerium (Ce) in the transparent conductive film 5 is preferably 1.0 ⁇ 10 20 atoms / cm 3 or more and 1.0 ⁇ 10 21 atoms / cm 3 or less, preferably 2.5 ⁇ 10 20 atoms / cm 3. 3 or more and 8.0 ⁇ 10 20 atoms / cm 3 or less, more preferably 4.0 ⁇ 10 20 atoms / cm 3 or more and 6.0 ⁇ 10 20 atoms / cm 3 or less, and further preferably 4.5 ⁇ 10 20 atoms / cm 3 or less. / cm 3 or more and 5.2 ⁇ 10 20 atoms / cm 3 or less.
- the transparent conductive film 9 is a film containing hydrogen (H) and a main component containing tungsten (W) made of indium oxide. That is, the transparent conductive film 9 contains hydrogen (H), tungsten (W), In (indium), and oxygen (O), and is doped with indium oxide (H) and tungsten (W) as impurities. In 2 O 3 ).
- the transparent conductive film 9 has a substantially polycrystalline structure, and has a large number of columnar structures standing so as to cover the surface of the n-type amorphous silicon layer 8.
- the transparent conductive film 9 has a tungsten (W) content of, for example, 2.0 ⁇ 10 20 atoms / cm 3 and a hydrogen (H) content of 1.0 ⁇ 10 20 atoms / cm 3 or more, 10
- the order is 20 atoms / cm 3 , for example, 9.0 ⁇ 10 20 atoms / cm 3 .
- the hydrogen content is the value of the content at the intermediate position in the film thickness direction of the transparent conductive film 5 and substantially corresponds to the average content excluding the vicinity of both surfaces of the transparent conductive film 9.
- the concentration of hydrogen contained in the transparent conductive film 9 is preferably larger on the substrate 2 side than on the back surface side collector electrode 10 side except for the vicinity of both surfaces, and further gradually increased toward the substrate 2 side.
- the structure which becomes is more preferable.
- FIGS. 3 is a top view of the solar cell module according to the present embodiment
- FIG. 4 is a perspective view thereof
- FIG. 5 is a cross-sectional view taken along the line A-A ′ of FIG.
- the solar cell module 20 is a solar cell module including the solar cell 1 according to an embodiment of the present invention.
- the solar cell module 20 includes a transparent front side cover 22 such as white plate tempered glass and a weather resistant back side cover 23 made of a resin film such as polyethylene terephthalate (PET). Between the front surface side cover 22 and the back surface side cover 23, linear solar cell groups 26 and 26 are arranged via a filler 27 such as ethylene vinyl acetate (EVA).
- EVA ethylene vinyl acetate
- the solar cell group 26 includes a plurality of solar cells 1, 1,..., And the solar cells 1, 1 arranged adjacent to each other include Sn—Ag—Cu, Sn—Pb, and the like as conductive surface materials.
- a strip-like (band-like) conductive connecting member 25 made of a flat copper wire or the like whose surface is covered with a solder layer (flexible layer).
- a metal frame 28 made of aluminum or the like that supports the structure is attached between the front cover 22 and the back cover 23 around the plate-shaped structure. Further, a terminal box for taking out the output of the solar cell to the outside is attached to the surface of the back side cover 23.
- connection members 25, 25, 25, 25 on one end side of 26 are solder-connected by a strip-like conductive second connection member 29 made of a flat copper wire or the like whose surface is coated with a solder layer.
- connection members 25, 25, 25, 25... On the other end side of other predetermined adjacent solar cell groups 26, 26 are L-shaped made of a flat copper wire or the like whose surface is covered with a solder layer.
- the third connecting members 30 and 31 having conductivity are connected by soldering. With this configuration, the plurality of solar cells 1, 1,... Of the solar cell module 1 are arranged in a matrix.
- the outermost solar cells 1, 1 are connected to the connection members 25, 25,.
- the L-shaped connecting members (output taking-out connecting members) 32 and 33 made of a flat copper wire or the like whose surface is attached are connected by soldering.
- An insulating member such as an insulating sheet such as polyethylene terephthalate (PET) is interposed.
- the front end side portions of the L-shaped connecting member 30, the L-shaped connecting member 31, the L-shaped connecting member 32, and the L-shaped connecting member 33 are cut off from the back side cover 23. It is led into the terminal box 34 located at the center on the back side of the solar cell module 20 through a notch ⁇ not shown>. In the terminal box 34, between the L-shaped connecting member 32 and the L-shaped connecting member 30, between the L-shaped connecting member 30 and the L-shaped connecting member 31, and the L-shaped connecting member 31. And an L-shaped connecting member 33 are connected by a bypass diode (not shown).
- a plurality of the solar cell modules 20 are fastened to the roof surface using a fixing screw, for example, on the roof of a private house, and adjacent solar cell modules are attached to each other.
- the sun is composed of a control system that is engaged with each other and installed in steps (steps) from the water side (eave side) to the water side (building side) and controls these It is a battery system.
- an n-type single crystal silicon substrate whose upper surface is a (100) plane is cleaned to remove impurities, and anisotropic etching is performed using an etching solution made of NaOH aqueous solution to perform upper and lower surfaces of the single crystal silicon substrate.
- a substrate 1 having a texture structure formed thereon is prepared.
- the i-type amorphous silicon layer 3 and the p-type amorphous silicon layer 4 are formed in this order on the upper surface having the texture structure of the n-type single crystal silicon substrate 2. Further, the i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 are formed in this order on the lower surface of the substrate 2 having the texture structure.
- H hydrogen
- W tungsten
- a transparent conductive film 9 made of indium oxide containing is formed.
- a sintered body of In 2 O 3 powder containing a predetermined amount of tungsten oxide (WO 3 ) powder for doping was used as a material source for film formation.
- the transparent conductive films 5 and 9 formed by the manufacturing method of this embodiment are preferably annealed at about 200 ° C. for about 1 hour to promote crystallization of the transparent conductive films 5 and 9, for example.
- the heating process of the electrode forming process described below also serves as the predetermined annealing process. However, in this case or other processes, the heating process may not be provided separately.
- an Ag paste in which silver (Ag) fine powder was kneaded into a thermosetting resin such as an epoxy resin was formed in a predetermined shape in a predetermined region on the transparent conductive film 5 using a screen printing method. Further, an Ag paste in which silver (Ag) fine powder was kneaded into an epoxy resin was formed in a predetermined shape in a predetermined region on the transparent conductive film 9 by using a screen printing method.
- Each Ag paste is hardened by heating at about 200 ° C. for about 1 hour, and the front side collecting electrode 6 and the back side collecting electrode 10 are formed. As described above, the solar cell 1 of the present embodiment is formed.
- the connecting members 25, 25,... are arranged so as to face each other through an adhesive containing solder or a thermosetting resin. Then, by heating and lowering the temperature while applying pressure in this state, the respective connecting members are fixed and connected to the bus bar electrodes 6b and 10b, and the solar cell group 26 is produced.
- the adhesive agent containing a thermosetting resin you may use the adhesive agent which consists of a thermosetting resin containing an electroconductive filler.
- the surface side cover 22 is used as a filler.
- the sealing sheet, the structure, the sealing sheet serving as a filler, and the back-side cover 23 are laminated in this order, and thermocompression bonded at 150 ° C. for 10 minutes in a vacuum state. Then, the said filler is hardened completely by heating at 150 degreeC for 1 hour. Finally, the terminal box 34 and the frame 28 are attached to complete the solar cell module 20.
- the transparent conductive film 5 is a film made of indium oxide containing hydrogen (H) in an amount within a predetermined range and cerium (Ce) in an amount within a predetermined range. 5 is a low resistance and can increase the output of the solar cell 1.
- the transparent conductive film 5 has a configuration in which 2 ⁇ ( ⁇ : X-ray diffraction angle) of the X-ray diffraction peak of (400) orientation of the transparent conductive film 5 is in a preferable range and the half width is in a preferable range. 5 has a lower resistance and can further increase the output of the solar cell 1.
- the transparent conductive film 5 has a structure in which 2 ⁇ ( ⁇ : X-ray diffraction angle) of the X-ray diffraction peak of (440) orientation of the transparent conductive film 5 is in a preferable range and the half width is in a preferable range. 5 has a lower resistance and can further increase the output of the solar cell 1.
- the transparent conductive film 5 has a low resistance as described above, it is possible to improve the output of the solar cell 1 while reducing the area of the front-side collector electrode 6. As a result, the amount of the material for the front-side collector electrode 6 can be reduced, so that the cost can be reduced.
- the transparent conductive films 5 and 9 of the solar cell 1 of the present embodiment have a substantially polycrystalline structure from the measurement results of backscattered electron diffraction (EBSD), transmission electron microscope (TEM), and X-ray diffraction (XRD). It was found to have a columnar structure and have an amorphous part, though very little. Further, in the X-ray diffraction measurement of the transparent conductive films 5 and 9, X-ray diffraction peaks of cerium oxide and tungsten oxide could not be observed.
- EBSD backscattered electron diffraction
- TEM transmission electron microscope
- XRD X-ray diffraction
- FIG. 6 is a diagram showing the relationship between the sheet resistance of the transparent conductive film 5 of the solar cell 1 of the present embodiment and the amount of cerium (Ce) in the transparent conductive film 5.
- the solid line indicates that the amount of hydrogen (H) in the transparent conductive film 5 is 2.0 ⁇ 10 21 atoms / cm 3
- the broken line indicates that the amount of hydrogen (H) in the transparent conductive film 5 is 10 It is an order smaller than the order of 21 atoms / cm 3 and is 9.0 ⁇ 10 20 atoms / cm 3 .
- the sheet resistance was measured using a 4-terminal method.
- the amount of Ce was measured using Rutherford backscattering analysis (RBS).
- the amount of hydrogen was measured using hydrogen forward scattering analysis (HFS).
- the transparent conductive film 5 has a lower resistance in the order of 10 21 atoms / cm 3 than in the case where the hydrogen (H) content is on the order of 10 20 atoms / cm 3 .
- the cerium (Ce) content of the transparent conductive film 5 is 1.0 ⁇ 10 20 atoms / cm 3 or more and 1.0.
- ⁇ 10 21 atoms / cm 3 or less is desirable, preferably 2.5 ⁇ 10 20 atoms / cm 3 or more, 8.0 ⁇ 10 20 atoms / cm 3 or less, more preferably 4.0 ⁇ 10 20 atoms / cm 3 or more It can be seen that it is 6.0 ⁇ 10 20 atoms / cm 3 or less, more preferably 4.5 ⁇ 10 20 atoms / cm 3 or more and 5.2 ⁇ 10 20 atoms / cm 3 or less.
- FIG. 7 is a diagram showing the relationship between the output of the solar cell of the present embodiment and the amount of cerium (Ce) in the transparent conductive film 5 of the solar cell.
- each solar cell is the same as that used in FIG. 6, the solid line is the amount of hydrogen (H) in the transparent conductive film 5 is 2.0 ⁇ 10 21 atoms / cm 3 , and the broken line is the transparent conductive film.
- the amount of hydrogen (H) in the film 5 is smaller than the order of 10 21 atoms / cm 3 and is 9.0 ⁇ 10 20 atoms / cm 3 .
- the solar cell output was measured using a solar simulator, the measurement conditions were air mass (AM) 1.5, light intensity 100 mW / cm 2 , and the output value was hydrogen as a transparent conductive film corresponding to the transparent conductive film 5.
- (H) is normalized by the output value of the solar cell using an indium oxide film not containing cerium (Ce) in the order of 10 20 atoms / cm 3 .
- FIG. 7 shows that the transparent conductive film 5 has a cerium (Ce) content of 1.0 ⁇ 10 20 to 1.2 ⁇ 10 21 atoms / cm 3 and a hydrogen (H) content of 10 20 to 10 21 atoms / cm 3 .
- the output is higher than that of a solar cell using a film made of indium oxide not containing cerium as the transparent conductive film corresponding to the transparent conductive film 5.
- the cerium (Ce) content of the transparent conductive film 5 is 1.0 ⁇ 10 20 atoms / cm. It is preferably 3 or more and 1.0 ⁇ 10 21 atoms / cm 3 or less, preferably 2.5 ⁇ 10 20 atoms / cm 3 or more and 8.0 ⁇ 10 20 atoms / cm 3 or less, more preferably 4.0 ⁇ 10 20.
- it is not less than atoms / cm 3 and not more than 6.0 ⁇ 10 20 atoms / cm 3, more preferably not less than 4.5 ⁇ 10 20 atoms / cm 3 and not more than 5.2 ⁇ 10 20 atoms / cm 3 .
- the amount of hydrogen (H) in the transparent conductive film 5 is about 3.1 ⁇ 10 21 atoms / cm 3
- cerium (Ce) in the transparent conductive film 5 is used.
- the sheet resistance is lower than 50 ⁇ / ⁇ even when the content of 7.0 ⁇ 10 20 atoms / cm 3 , and the above normalized output is 108.1%, and a high output is obtained. Yes.
- FIG. 8 shows the configurations of the transparent conductive films of Examples 1 to 3 and Comparative Examples 1 to 11 in which other transparent conductive films are used in place of the transparent conductive film 5 in Examples 1 to 3 according to the solar cell 1 of the present embodiment.
- the sheet resistance and solar cell characteristic of a transparent conductive film are shown.
- the dopant column indicates impurities in the sintered body made of indium oxide used for film production and the content thereof, and the “multiple” in the hydrogen content column indicates the hydrogen content in the transparent conductive film.
- the amount is 2.0 ⁇ 10 21 atoms / cm 3
- “low” has a hydrogen content of 9.0 ⁇ 10 20 atoms / cm 3 .
- Examples 1 to 3 are the same as the solar cell 1 according to the embodiment used in FIGS. 6 and 7, and cerium (Ce) in the transparent conductive film 5 of Examples 1 to 3 is used.
- the concentrations are 2.4 ⁇ 10 20 atoms / cm 3 , 4.8 ⁇ 10 20 atoms / cm 3 , and 8.0 ⁇ 10 20 atoms / cm 3 , respectively, and Comparative Examples 1 to 11 are transparent conductive materials. Except for the film 5, the present embodiment is the same as the present embodiment.
- Comparative Examples 1 to 11 have good sheet resistance and solar cell output, but both are not good.
- Examples 1 to 3 including the transparent conductive film 5 made of indium oxide containing cerium and hydrogen in the order of 10 21 atoms / cm 3 have good sheet resistance and solar cell output. I understand that.
- FIG. 9 is an X-ray diffraction pattern diagram of Example 2, Comparative Example 1, Comparative Example 2, and Comparative Example 8, where the vertical axis represents the X-ray diffraction intensity and the horizontal axis represents 2 ⁇ ( ⁇ : X-ray diffraction angle). is there.
- the X-ray diffraction measurement is a measurement of the transparent conductive film on the texture structure in the solar cell 1 before the formation of the front-side collector electrode 6 and the back-side collector electrode 10, and is subjected to an annealing treatment at about 200 ° C. for 1 hour. went.
- the X-ray diffraction measurement was performed in 2 ⁇ increments of 0.002 °.
- Example 2 is significantly different from Comparative Example 1, Comparative Example 2, and Comparative Example 8.
- FIG. 10 shows the X-ray diffraction peak 2 ⁇ ( ⁇ : X-ray diffraction angle) and the half-value width of the (400) orientation of the transparent conductive film 5 of the solar cells of Examples 1 to 3, and Comparative Examples 1 to
- the 2 ⁇ ( ⁇ : X-ray diffraction angle) and the half width of the (400) -oriented X-ray diffraction peak of the transparent conductive film corresponding to the transparent conductive film 5 of Example 11 are shown.
- FIG. 11 shows the X-ray diffraction peak 2 ⁇ ( ⁇ : X-ray diffraction angle) and the half-value width of the (440) orientation of the transparent conductive film 5 of the solar cells of Examples 1 to 3, and Comparative Example 1 above.
- FIG. 6 is a diagram showing 2 ⁇ ( ⁇ : X-ray diffraction angle) and half-value width of an X-ray diffraction peak of (400) orientation of a transparent conductive film corresponding to the transparent conductive film 5 of Comparative
- the X-ray diffraction measurement is a measurement of the transparent conductive film on the texture structure in the solar cell 1 before the formation of the front-side collector electrode 6 and the back-side collector electrode 10, and is annealed at about 200 ° C. for 1 hour. Processed. The X-ray diffraction measurement was performed in 2 ⁇ increments of 0.002 °.
- 2 ⁇ of the transparent conductive film 5 is 35.31 ° to 35.41 °, preferably 35.33 ° to 35.40 °, and more preferably 35.36 ° to 35.38 °.
- the half width of the (400) -oriented X-ray diffraction peak of the transparent conductive film 5 is 0.10 ° to 0.30 °, preferably 0.15 ° to 0.25 °, It can be seen that the angle is preferably 0.18 ° to 0.20 °.
- the X-ray diffraction peak of (440) orientation of the transparent conductive film 5 has a 2 ⁇ ( ⁇ : X-ray diffraction angle) of 50.80 ° to 50.96 °, preferably 50. It is 85 ° to 50.95 °, more preferably 50.90 ° to 50.91 °, and the half width of the (440) -oriented X-ray diffraction peak of the transparent conductive film 5 is 0.10 ° to It can be seen that it is 0.35 °, preferably 0.15 ° to 0.30 °, and more preferably 0.17 ° to 0.22 °.
- the transparent conductive film 5 containing cerium according to the present embodiment having low resistance and preferable output of the solar cell 1 and indium oxide containing hydrogen on the order of 10 21 atoms / cm 3 is obtained from cerium.
- a transparent conductive film containing indium oxide containing hydrogen of the order of 10 20 atoms / cm 3 or less, a transparent conductive film containing indium oxide containing tungsten or indium oxide containing tungsten and hydrogen, ITO, and hydrogen It can be seen that 2 ⁇ ( ⁇ : X-ray diffraction angle) of the X-ray diffraction peak of (400) orientation and (440) orientation and the full width at half maximum of the X-ray diffraction peak are significantly different from those of indium oxide containing.
- FIG. 12 is a diagram showing the results of the moisture resistance acceleration test of the solar cell 1 of Example 4 and the solar cell of the comparative example according to the present embodiment, and the vertical axis indicates the solar cell of Example 4 at each time.
- FF fill factor
- the horizontal axis represents the moisture resistance experiment time.
- the conditions for this accelerated test were a humidity of 85% and a temperature of 85 ° C., and were performed in the form of an accelerated test module. It should be noted that at the start of the experiment, Example 4 was better than F.A. F. Was about 0.5% higher.
- the solar cell 1 of the present embodiment an oxidation with a hydrogen (H) content of 3.1 ⁇ 10 21 atoms / cm 3 and a cerium (Ce) content of 7.0 ⁇ 10 20 atoms / cm 3 is used.
- the transparent conductive film 5 had a hydrogen (H) content of 3.4 ⁇ 10 21 atoms / cm 3 , tungsten ( W)
- a solar cell replaced with a transparent conductive film made of indium oxide having a content of 2.0 ⁇ 10 20 atoms / cm 3 was used.
- the transparent conductive film on the n-type amorphous silicon layer 8 contains 3.1 ⁇ 10 21 atoms / cm 3 of hydrogen (H) and the content of tungsten (W).
- the transparent conductive film 5 on the p-type amorphous silicon layer 4 on the ni-p junction side includes a transparent conductive film containing indium oxide containing hydrogen (H) and cerium (Ce). It can be seen that the solar cell of this embodiment is superior in moisture resistance to the solar cell of the comparative example provided with the transparent conductive film containing indium oxide containing hydrogen (H) and tungsten (W).
- the transparent conductive film on the n-type amorphous silicon layer is composed of an indium oxide-containing film containing hydrogen (H) and tungsten (W) with low hydrogen content in the order of 10 20 atoms / cm 3.
- a transparent conductive film composed of an indium oxide-containing film containing hydrogen (H) and cerium (Ce) containing less hydrogen (on the order of 10 20 atoms / cm 3 ) may be used.
- the solar cell of the above embodiment has been described using a so-called HIT solar cell.
- the solar cell can be used as appropriate for various solar cells such as a single crystal solar cell and a polycrystalline solar cell. It can also be applied to molds.
- bus bar electrodes for the front side collector electrode and the rear side collector electrode, but the number thereof may be changed as appropriate, and other shapes and the like may be changed as appropriate.
- front-side collector electrode and / or the back-side collector electrode may have a bus bar-less structure that does not include a bus-bar electrode.
- the present invention can also be applied to a device composed of a bus bar electrode formed thereon.
- the p-type side is positioned on the side where light incidence is mainly performed, but the n-type side may be positioned. In this case, it is preferable to appropriately change the pitch of the finger electrodes of the collector electrode.
- the solar cell module of the present invention is not limited to the above-described embodiment, and for example, it may have a configuration that does not include a frame body, or may be for application products.
- the solar cell module of the present invention may be a double-sided light-receiving solar cell module.
- both the front side cover and the back side cover may be glass plates.
- the present invention is not limited to this, and the installation method of the solar cell module can be changed as appropriate.
- the photovoltaic power generation field Etc. can be used.
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Abstract
Description
ることが判る。
り、上記規格化した出力は108.1%であり、高い出力が得られている。
2 n型単結晶シリコン基板
3 i型非晶質シリコン層
4 p型非晶質シリコン層
5 透明導電膜
20 太陽電池モジュール
Claims (8)
- テクスチャー構造を有する面を備える基板と、該テクスチャー構造を有する面上に形成された透明導電膜を備える太陽電池であって、前記透明導電膜は、水素及びセリウムを含有する酸化インジウムを含むことを特徴とする太陽電池。
- 前記透明導電膜は、X線回折法により測定した(400)面のX線回折ピークが2θ(θ:X線回折角)35.31°~35.40°の範囲にあり、且つ半値幅が0.10°~0.30°の範囲にあることを特徴とする請求項1記載の太陽電池。
- 前記基板は単結晶シリコン基板からなり、前記テクスチャー構造は、前記基板を異方性エッチングすることにより形成した多数のピラミッド形状の凹凸構造であることを特徴とする請求項1の太陽電池。
- 前記単結晶シリコンからなる基板と前記透明導電膜との間は、p型非晶質シリコン層を備えることを特徴とする請求項3に記載の太陽電池。
- 前記セリウムの含有量は、1.0×1020atoms/cm3以上1.0×1021atoms/cm3以下であることを特徴とする請求項1に記載の太陽電池。
- 前記水素の含有量は、1021atoms/cm3のオーダであることを特徴とする請求項1に記載の太陽電池。
- 請求項1乃至6のいずれかに記載の太陽電池を備えたことを特徴とする太陽電池モジ
ュール。 - 請求項7に記載の太陽電池モジュールを含むことを特徴とする太陽電池システム。
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JP2011531969A JPWO2011034145A1 (ja) | 2009-09-18 | 2010-09-16 | 太陽電池、太陽電池モジュールおよび太陽電池システム |
CN2010800363433A CN102473761A (zh) | 2009-09-18 | 2010-09-16 | 太阳能电池、太阳能电池模块和太阳能电池系统 |
EP10817258.6A EP2479797A4 (en) | 2009-09-18 | 2010-09-16 | SOLAR BATTERY, SOLAR BATTERY MODULE AND SOLAR BATTERY SYSTEM |
US13/422,105 US20120192914A1 (en) | 2009-09-18 | 2012-03-16 | Solar cell, solar cell module and solar cell system |
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JP2009-216300 | 2009-09-18 | ||
JP2009216300 | 2009-09-18 |
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US13/422,105 Continuation US20120192914A1 (en) | 2009-09-18 | 2012-03-16 | Solar cell, solar cell module and solar cell system |
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EP (1) | EP2479797A4 (ja) |
JP (1) | JPWO2011034145A1 (ja) |
KR (1) | KR20120067332A (ja) |
CN (1) | CN102473761A (ja) |
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WO (1) | WO2011034145A1 (ja) |
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2010
- 2010-09-16 EP EP10817258.6A patent/EP2479797A4/en not_active Withdrawn
- 2010-09-16 JP JP2011531969A patent/JPWO2011034145A1/ja active Pending
- 2010-09-16 CN CN2010800363433A patent/CN102473761A/zh active Pending
- 2010-09-16 KR KR1020127004206A patent/KR20120067332A/ko not_active Application Discontinuation
- 2010-09-16 TW TW099131407A patent/TW201133874A/zh unknown
- 2010-09-16 WO PCT/JP2010/066079 patent/WO2011034145A1/ja active Application Filing
-
2012
- 2012-03-16 US US13/422,105 patent/US20120192914A1/en not_active Abandoned
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Cited By (15)
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JPWO2012165289A1 (ja) * | 2011-06-03 | 2015-02-23 | 三洋電機株式会社 | 太陽電池の製造方法 |
JPWO2014132516A1 (ja) * | 2013-02-26 | 2017-02-02 | パナソニックIpマネジメント株式会社 | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
WO2014132516A1 (ja) * | 2013-02-26 | 2014-09-04 | 三洋電機株式会社 | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
WO2014155833A1 (ja) | 2013-03-28 | 2014-10-02 | 三洋電機株式会社 | 太陽電池 |
US9905710B2 (en) | 2013-03-28 | 2018-02-27 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell |
WO2015050161A1 (ja) * | 2013-10-04 | 2015-04-09 | 長州産業株式会社 | 光発電素子 |
JP2015073057A (ja) * | 2013-10-04 | 2015-04-16 | 長州産業株式会社 | 光発電素子 |
JP2015118983A (ja) * | 2013-12-17 | 2015-06-25 | 信越化学工業株式会社 | 太陽電池及び太陽電池の製造方法 |
WO2015098872A1 (ja) * | 2013-12-26 | 2015-07-02 | 株式会社カネカ | 太陽電池のi‐v測定方法、太陽電池のi‐v測定装置、太陽電池の製造方法、太陽電池モジュールの製造方法、および太陽電池モジュール |
JPWO2015098872A1 (ja) * | 2013-12-26 | 2017-03-23 | 株式会社カネカ | 太陽電池のi‐v測定方法、太陽電池のi‐v測定装置、太陽電池の製造方法、太陽電池モジュールの製造方法、および太陽電池モジュール |
US10340848B2 (en) | 2013-12-26 | 2019-07-02 | Kaneka Corporation | I-V measurement device for solar cell, manufacturing method for solar cell, and solar cell module |
JP2020509595A (ja) * | 2018-01-18 | 2020-03-26 | フレックス,リミテッド | バスバーレス瓦状アレイ太陽電池セルおよび太陽電池セルを製造する方法 |
JP7002558B2 (ja) | 2018-01-18 | 2022-01-20 | フレックス,リミテッド | バスバーレス瓦状アレイ太陽電池セルおよび太陽電池セルを製造する方法 |
WO2023042845A1 (ja) * | 2021-09-17 | 2023-03-23 | 日東電工株式会社 | 透明導電層および透明導電性フィルム |
WO2023042846A1 (ja) * | 2021-09-17 | 2023-03-23 | 日東電工株式会社 | 透明導電層、透明導電性フィルムおよび物品 |
Also Published As
Publication number | Publication date |
---|---|
EP2479797A1 (en) | 2012-07-25 |
US20120192914A1 (en) | 2012-08-02 |
CN102473761A (zh) | 2012-05-23 |
EP2479797A4 (en) | 2013-08-07 |
TW201133874A (en) | 2011-10-01 |
JPWO2011034145A1 (ja) | 2013-02-14 |
KR20120067332A (ko) | 2012-06-25 |
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