WO2009139354A1 - セラミック基板、機能性セラミック基板、プローブカード及びセラミック基板の製造方法 - Google Patents
セラミック基板、機能性セラミック基板、プローブカード及びセラミック基板の製造方法 Download PDFInfo
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- WO2009139354A1 WO2009139354A1 PCT/JP2009/058775 JP2009058775W WO2009139354A1 WO 2009139354 A1 WO2009139354 A1 WO 2009139354A1 JP 2009058775 W JP2009058775 W JP 2009058775W WO 2009139354 A1 WO2009139354 A1 WO 2009139354A1
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- ceramic substrate
- base material
- conductor
- mechanical polishing
- ceramic
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/04—Particles; Flakes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
Definitions
- the present invention relates to a ceramic substrate, a functional ceramic substrate, and a method of manufacturing a ceramic substrate, and in particular, a ceramic substrate which can be suitably used as a substrate for wafer inspection, a method of manufacturing a functional ceramic substrate and a ceramic substrate, and wafer inspection.
- the present invention relates to a probe card as a substrate.
- the substrate constituting the measurement jig Since the measurement jig is used by repeatedly contacting the wafer to be inspected, the substrate constituting the measurement jig has a high strength that can withstand the above-described repetitive measurement. It is required. From this point of view, a ceramic substrate has come to be used as the substrate of the measuring jig. The ceramic substrate is subjected to a predetermined baking process to form a ceramic fired body, and then the front and back surfaces are polished to planarize the front and back surfaces of the ceramic fired body to obtain a ceramic substrate having a predetermined thickness. It is like that.
- micro cracks and the like are generated on the front and back surfaces of the obtained ceramic substrate, and an embrittled layer including the micro cracks and the like is formed in the surface layer portion thereof. Become. For this reason, the strength of the ceramic substrate is lowered, and the high strength characteristics inherently possessed by the ceramic substrate can not be sufficiently exhibited.
- Patent Document 1 it is attempted to perform heat treatment in a temperature range lower than the firing temperature on a ceramic substrate after polishing treatment to modify and repair the embrittled layer. It is done.
- the heat treatment may cause the ceramic substrate to shrink again, which may result in a large deviation from the target size. That is, the dimensional accuracy of the ceramic substrate may be degraded by the heat treatment.
- the heat treatment also causes deformation of the wiring layer, resulting in a problem that a ceramic substrate as designed can not be obtained.
- connection terminal for wafer inspection is formed on one main surface of the ceramic substrate produced through the above-described steps.
- the connection terminal also needs to repeatedly contact the wafer to be inspected. From this point of view, high adhesion strength and high connection reliability of the connection terminal to the ceramic substrate are required.
- the connection terminal is bonded to the ceramic substrate through the embrittled layer.
- the embrittled layer is brittle and may lead to failure due to long-term stress loading and the like. Therefore, when the measuring jig thus obtained is used repeatedly, the above-mentioned breakage of the embrittled layer occurs, and as a result, the substantial bonding strength of the bonding terminal to the ceramic substrate is deteriorated. As a result, the connection reliability also deteriorates.
- connection terminal after modifying and repairing the embrittled layer, sufficient connection strength can not be obtained yet.
- Patent Documents 3 and 4 disclose fixing the connection terminal (input / output pin) to the ceramic substrate by brazing, but in Patent Document 3, the ceramic substrate and the input / output pin are connected. Since the adhesion strength with the conductor layer is not sufficient, the layer configuration of the conductor layer has been studied in order to relieve the stress applied to the conductor layer. In patent document 4, in consideration of adhesion strength between a ceramic substrate and a conductor layer, brazing of a connection terminal to a conductor layer to which a cover coat is added is considered.
- An object of the present invention is to provide a novel ceramic substrate having excellent adhesion with connection terminals, that is, excellent bonding strength and sufficient strength.
- the present invention comprises a base material consisting of an amorphous phase and particles consisting of a crystalline phase dispersed in the base material, and a part of the particles is the base material.
- the present invention relates to a ceramic substrate characterized by protruding from at least one surface.
- a ceramic fired body having a base material composed of an amorphous phase and particles composed of a crystalline phase dispersed in the base material, and at least one of the ceramic fired body And D. applying chemical mechanical polishing to the main surface.
- the present invention relates to a method of manufacturing a ceramic substrate.
- the present inventors diligently conducted studies to achieve the above object. As a result, it has been found that the crystalline phase component protruding from the surface of the ceramic substrate plays an extremely important role in the adhesion between the surface of the ceramic substrate and the connection terminal, that is, the connection strength.
- the crystalline phase component (particles) is made to project from the surface of the ceramic substrate without being limited only to the exposure of the surface of the ceramic substrate. Therefore, the connection terminal is formed via the protruding crystalline phase component (particles) of the ceramic substrate. In this case, since the crystalline phase component imparts an anchor effect to the connection terminal, the bonding strength of the connection terminal to the ceramic substrate is improved.
- the embrittled layer including micro cracks and the like is removed from the surface layer portion of the ceramic substrate. Therefore, the strength of the ceramic substrate itself can also be improved.
- the ceramic substrate is The surface can be subjected to chemical mechanical polishing (CMP).
- CMP chemical mechanical polishing
- the chemical mechanical polishing treatment is a general-purpose polishing treatment method, and is generally performed to improve the smoothness of the surface of the object to be polished, and the object to be polished is generally a semiconductor material, a metal material or the like. It is.
- a ceramic material is used as an object to be polished in the chemical mechanical polishing process, and in contrast to the prior art, it is used to roughen the surface of the material. From such a point of view, although the general-purpose chemical mechanical polishing process is used in the present invention, its idea and actual function and effect are completely different from those of the conventional chemical mechanical polishing process.
- the crystalline phase constituting the ceramic substrate is composed of a crystalline filler
- the other amorphous phase is composed of glass.
- the ratio of the particles protruding from the base material may be 0.30 to 0.45 with respect to the area of the at least one surface of the base material.
- the ratio exceeds 0.45, the ratio of glass to the ceramic substrate decreases, and shrinkage during firing can not be sufficiently suppressed, and the dimensional accuracy of the ceramic substrate is sufficiently improved. I can not On the other hand, when the ratio is smaller than 0.35, the ratio of the filler exposed on the surface may be reduced, and the adhesion strength with the connection terminal may be deteriorated.
- the ratio of the particles protruding from the base material is 0.30 to 0.45 with respect to the area of the at least one surface of the base material.
- the dimensional accuracy of the ceramic substrate and the adhesion strength of the connection terminal to the ceramic substrate can be balanced.
- the surface of a part of the particles, which protrudes from at least one surface of the base material can be flat.
- the contact area between the ceramic substrate and the conductor can be increased, so that the anchor effect on the conductor can be increased. Adhesion to the conductor can be increased.
- the surface of the ceramic fired body to be subjected to the chemical mechanical polishing treatment is subjected to mechanical polishing treatment in advance. It can be applied.
- This mechanical polishing process is mainly performed to adjust the thickness of the ceramic substrate.
- embrittled layer containing a micro crack etc. is formed in the surface layer of the ceramic sintered compact by the said mechanical polishing process, this embrittled layer can be removed by the said chemical mechanical polishing process performed later.
- a conductor can be formed through the above-mentioned protruding crystalline phase component (particles) of the ceramic substrate obtained as described above, to obtain a functional ceramic substrate. Since this functional ceramic substrate has a conductor on the surface of the ceramic substrate, it can be used, for example, as a wafer inspection substrate by appropriately selecting the type of the conductor.
- (Ceramic substrate) 1 to 6 are process drawings showing an example of the method for producing a ceramic substrate of the present invention. 4 to 6, the polishing process in the above-mentioned manufacturing method is shown by enlarging the vicinity of the surface of the ceramic sintered body. Moreover, the manufacturing method shown below is an example to the last, and this invention is not limited to the following method.
- a total of five green sheets 111 to 115 are prepared, and these are sequentially laminated to produce a green sheet multilayer body 11.
- An internal conductor layer 112A is formed on the main surface of the green sheet 112, and an internal conductor layer 113A is also formed on the main surface and the back surface of the green sheet 113. Further, the inner conductor layer 114A is formed on the main surface of the green sheet 114 as well.
- via conductor layer 112B electrically connecting internal conductor layers 112A and 113A is formed in green sheet 112, and internal conductor layers 113A and 114A are electrically connected in green sheet 114. Via conductor layer 114B is formed. Furthermore, via conductor layers 111B and 115B are formed in the green sheets 111 and 115 for electrically connecting the external conductor layers and connection terminals of the ceramic substrate to be obtained later and the internal conductor layers 112A and 114A and the like. There is.
- the number of green sheets is five in this example, it can be any number as needed.
- it may be a single green sheet.
- the form and the number of the inner conductor layers and the via conductor layers can be arbitrarily set as required.
- any green sheet to be formed with the inner conductor layer and the via conductor layer can be arbitrarily selected and set.
- the green sheets 111 to 115 contain a crystalline filler and glass.
- the crystalline filler examples include quartz, alumina, zirconium oxide, mullite, forsterite, enstatite, spinel, magnesia, calcium zirconate, strontium silicate, calcium titanate, barium titanate and the like.
- quartz alumina
- zirconium oxide mullite
- forsterite enstatite
- spinel magnesia
- calcium zirconate strontium silicate
- calcium titanate calcium titanate
- barium titanate barium titanate
- Alumina is preferred.
- the glass contains at least SiO 2 , and at least one oxide component selected from the group consisting of Al 2 O 3 , B 2 O 3 , ZnO, PbO, alkaline earth metal oxides and alkali metal oxides.
- Containing SiO for example, SiO 2 -B 2 O 3 system, SiO 2 -B 2 O 3 -Al 2 O 3 system, SiO 2 -B 2 O 3 -Al 2 O 3 -MO system (M is Ca, Borosilicate glass such as Sr, Mg, Ba or Zn), alkali silicate glass, Ba-based glass, Pb-based glass, Bi-based glass and the like.
- the above-mentioned crystalline filler and glass are mixed with a predetermined binder and, if necessary, a solvent, a plasticizer and the like to obtain a ceramic slurry, and then the doctor blade method is used. It manufactures by methods, such as a rolling method and a press method.
- the green sheet formed as described above is subjected to a drilling process and then filled with a predetermined conductor.
- the inner conductor layers 112A and the like are formed by performing screen printing, plating or the like on the green sheet formed as described above.
- the inner conductor layer 112A, the via conductor layer 112B, and the like preferably include at least one selected from the group consisting of Ag, Au, an Ag / Pt alloy, an Ag / Pd alloy, and Cu. Since these metals are both electrically good conductors and chemically stable, they can be stably present even after the firing process described below, and they do not lose their function as conductor layers.
- the green sheet multilayer body 11 is fired in the state shown in FIG.
- the firing atmosphere is in the air, but there is no problem even if an inert gas or nitrogen gas atmosphere is used.
- the firing temperature can be 800 to 1000 ° C.
- the firing time is 10 minutes to 120 minutes.
- the green sheet multilayer body 11 is fired to form a ceramic fired body 13 as shown in FIG.
- it can also carry out using a non-shrinkage baking technique suitably.
- the upper surface and the back surface of the ceramic fired body 13 are subjected to mechanical polishing so that the thickness of the ceramic fired body 13 becomes approximately equal to the thickness of the intended ceramic substrate (rough adjustment) .
- mechanical polishing treatment for example, general-purpose techniques such as lapping and polishing may be used.
- a chemical mechanical polishing process is performed on the upper surface of the ceramic sintered body 13 on which a conductor such as a connection terminal is to be formed.
- This chemical mechanical polishing process is performed under general conditions using a chemical solution (acid or alkali) and an abrasive.
- the ceramic sintered body 13 has an amorphous phase, ie, the crystalline phase, ie, the crystalline filler, in the base material 13B made of the glass, before the mechanical polishing process is performed. It has a state in which the contained particles 13A are dispersed.
- an embrittled layer 131 including micro cracks and the like is formed on the surface layer portion of the ceramic sintered body 13.
- the embrittlement layer 131 is removed and the etching rate of the base material 13B becomes larger than the etching rate of the particles 13A by performing the chemical mechanical polishing process described above.
- the particles 13A project from the surface of the base material 13B.
- the protruding height of the particles 13A is 10 nm or more.
- the upper limit value of the protrusion height depends on the type of glass forming the base material 13B, the type of crystalline filler forming the particles 13A, and the like, but is approximately 500 nm.
- the conductor layer protrudes from the surface of the ceramic substrate 14 by using the ceramic sintered body 13 after chemical mechanical polishing as the ceramic substrate 14 and forming a conductor layer such as a connection terminal on the polishing surface.
- the anchor effect of the particles 13A results in high connection strength.
- the chemical mechanical polishing process is applied to the ceramic material. Therefore, as shown in FIG. 6, a unique phenomenon that the particles 13A protrude from the surface of the base material 13B is exhibited.
- the surface of the particle 13A itself is flattened by the chemical mechanical polishing process. This is similar to the effect of the conventional chemical mechanical polishing process.
- the contact area of a ceramic substrate and a conductor can be increased because the surface of particle
- fine adjustment of the thickness of the ceramic sintered body 13 is performed by the above-mentioned chemical mechanical polishing process so that it becomes equivalent to the thickness of the target ceramic substrate 14.
- the mechanical polishing process is performed on the ceramic sintered body 13 as described above, but the mechanical polishing process can be omitted.
- rough adjustment of the thickness of the ceramic sintered body 13 is also performed by the chemical mechanical polishing process.
- the polishing rate of the chemical mechanical polishing process is low, when the thickness of the ceramic sintered body 13 is largely different from the intended thickness of the ceramic substrate 14, the chemical mechanical polishing process may require a long time. is there.
- the chemical mechanical polishing process is performed only on the upper surface of the ceramic sintered body 13 in the above example, the chemical mechanical polishing process can also be performed on the lower surface of the ceramic sintered body 13.
- the ratio of the occupied area Sr of the particles 13A on the surface of the ceramic fired body 13 after polishing, ie, the surface of the ceramic substrate 14, to the area of the entire surface of the ceramic substrate 14 is preferably 0.30 to 0.45.
- the ratio exceeds 0.45, the ratio of glass in the ceramic substrate 14 decreases, and densification and shrinkage can not be sufficiently suppressed, and the dimensional accuracy of the ceramic substrate 14 is sufficiently improved. Not only that, but also the mechanical properties of the ceramic substrate are degraded.
- the ratio is smaller than 0.35, the ratio of the particles 13A exposed on the surface, that is, the ratio of the crystalline filler may be reduced, and the adhesion strength with the connection terminal may be deteriorated.
- the ratio of the occupied area Sr of the particles 13A on the surface of the ceramic substrate 14 to the area of the entire surface of the ceramic substrate 14 is 0.30 to 0.45, the dimensional accuracy of the ceramic substrate 14 And the adhesion strength of the connection terminal to the ceramic substrate 14 can be balanced.
- the occupied area Sr can be derived by observing the surface after chemical mechanical polishing treatment with an electron microscope (2000 ⁇ magnification).
- an electron microscope 2000 ⁇ magnification
- a binarization process etc. can be suitably implemented with respect to the acquired image.
- FIG. 7 is a cross-sectional view showing an example of the functional ceramic substrate of the present invention.
- the same reference numerals are used for the same or similar constituent elements as those of the ceramic substrate in FIGS. 1 to 6 described above.
- the functional ceramic substrate 20 shown in FIG. 7 comprises the ceramic substrate 14 obtained as described above.
- the first outer layer conductor 21 is provided on the first main surface (lower surface) 14 A of the ceramic substrate 14, and the second outer layer conductor 22 is provided on the second main surface (upper surface) 14 B of the ceramic substrate 14. It is done. Further, on the first outer layer conductor 21, a microprobe 23 for electrical inspection is provided so as to straddle the adjacent outer layer conductor 21.
- the first outer layer conductor 21 and the second outer layer conductor 22 can have, for example, a laminated structure in which Ti / Cu / Ni / Au layers are sequentially laminated.
- a laminated structure can be formed by forming a Ti film by sputtering and sequentially performing Cu plating, Ni plating, and Au plating.
- the first main surface 14A of the ceramic substrate 14 on which the first outer layer conductor 21 is formed is subjected to a chemical mechanical polishing process in addition to the mechanical polishing process.
- a chemical mechanical polishing process in addition to the mechanical polishing process.
- FIG. It has a form in which a part of the particles (the surface is flattened) protrudes from the surface of the base material to be configured. Therefore, the anchor effect of the particles increases the connection strength between the ceramic substrate 14 and the outer layer conductor 21 and the microprobe via the outer layer conductor 21.
- the microprobe 23 is repeatedly brought into contact with the IC formed on the semiconductor substrate, specifically, the silicon (Si) wafer, and the electrical characteristics of the IC with respect to a plurality of silicon wafers are obtained. Even in the case where the inspection is repeatedly performed, the above-mentioned electricity which is stable over a long period of time is not generated due to the connection failure of the microprobe 23, that is, the first outer layer conductor 21 to the ceramic substrate 14. Inspection can be done.
- the second main surface 14B of the ceramic substrate 14 on which the second outer layer conductor 22 is formed is subjected to an electrical inspection by forming the above-described probe pin via the second outer layer conductor 22. There is no Therefore, since a very high connection strength is not required between the ceramic substrate 14 and the second outer layer conductor 22 as described above, the mechanical polishing process alone is sufficient without performing the chemical mechanical polishing process. It is. However, the chemical mechanical polishing process is not excluded.
- internal conductors 141A to 145A are provided over a plurality of layers. Further, in order to connect any one of the inner conductors 141A to 145A, or any of the inner conductors 141A to 145A, and the first outer layer conductor 21 and the second outer layer conductor 22, the interlayer connecting conductors 141B to 149B. Is provided. Specifically, the first outer conductor 21 and the inner conductor 144A are electrically connected by the interlayer connection conductor 141B, and the first outer conductor 21 and the inner conductor 143A are electrically connected by the interlayer connection conductor 142B. The inner conductor 142A and the second outer conductor 22 are electrically connected by the interlayer connection conductor 143B.
- the inner conductor 143A and the second outer conductor 22 are electrically connected by the interlayer connection conductor 144B, and the inner conductor 144A and the second outer conductor 22 are electrically connected by the interlayer connector 145B, The inner conductor 142A and the inner conductor 144A are electrically connected by the interlayer connector 146B.
- the inner conductor 144A and the inner conductor 145A are electrically connected by the interlayer connecting conductor 147B
- the inner conductor 143A and the inner conductor 145A are electrically connected by the interlayer connecting conductor 148B
- the interlayer connecting conductor 149B is.
- the inner conductor 145A and the second outer layer conductor 22 are electrically connected.
- the first outer layer conductor 21 and the probe pins 23 and the second outer layer conductor 22 are electrically connected.
- the functional ceramic substrate 20 shown in FIG. 7 can be, for example, 5 mm thick ⁇ 300 mm long ⁇ 300 mm wide.
- electrical testing can be performed simultaneously on a plurality of ICs formed on a silicon wafer with a diameter of 300 mm (12 inches) before being singulated. That is, one electrical test enables electrical test of a large number of ICs.
- FIG. 8 is a cross-sectional view showing an example of the probe card of the present invention.
- the same reference numerals are used for the same or similar components as the ceramic substrate shown in FIGS. 1 to 6 and the functional ceramic substrate shown in FIG.
- the probe card 30 shown in FIG. 8 has a metal frame 31, and the functional ceramic substrate 20 shown in FIG. 7 is fixed by a weir 311 provided below this.
- the internal conductors and the interlayer connection conductors formed in the functional ceramic substrate 20 are not shown for the sake of simplification.
- connection terminal 33 is provided on the upper surface 32A of the end of the printed board 32 exposed from the metal frame 31.
- the connection terminals 33 are a current supply source (power supply) for performing an electrical inspection of the silicon wafer by the probe card 30 and a measurement signal (a current value) obtained by performing the electrical inspection.
- An external device not shown is provided.
- connection terminals 34 are formed on the second outer layer conductor 22 of the functional ceramic substrate 20, and are electrically connected to the internal conductors 321 formed in the printed circuit board 32, respectively.
- the functional ceramic substrate 20 and the printed circuit board 32 are electrically connected, and as described above, the probe card 30, that is, the functional ceramic substrate 20 is electrically connected to the IC formed on the silicon wafer. The result of the inspection is detected by the external device through the connection terminal 33.
- a borosilicate glass powder mainly composed of SiO 2 , Al 2 O 3 and B 2 O 3 and an alumina powder are put in a pot made of alumina so that the weight ratio becomes 50:50, and the total weight becomes 1 kg. Further, 120 g of an acrylic resin binder, a solvent (MEK) and a plasticizer (DOP) were added to the pot and mixed for 5 hours to obtain a ceramic slurry. Next, a green sheet having a thickness of 0.15 mm was obtained from this ceramic slurry by a doctor blade method. The average particle diameter of the alumina powder was 2 ⁇ m, and the specific surface area was 1 m 2 / g.
- the green sheet obtained as described above is subjected to perforation processing and filled with a conductor to form a via conductor layer, and an inner conductor layer is formed on each green sheet as shown in FIG. I got a multilayer body. Then, the green sheet multilayer body obtained in this manner was fired at 850 ° C. for 30 minutes to obtain a ceramic sintered body as shown in FIG.
- FIGS. 9 and 10 show the surface condition of the ceramic sintered body before and after the chemical mechanical polishing process.
- FIG. 9 shows the state before chemical mechanical polishing (mechanical polishing only), and
- FIG. 10 shows the state after chemical mechanical polishing.
- the dark part corresponds to crystalline, ie, alumina powder
- the whit part corresponds to amorphous, ie, vitreous.
- FIG. 10 When the states of FIG. 9 and FIG. 10 are compared, it can be seen in FIG. 10 that the surface of the alumina powder is flattened. Therefore, it can be seen that the surface of the alumina powder protruding from the surface of the glassy base material is planarized by performing the chemical mechanical polishing process.
- the ceramic sintered body is subjected to the chemical mechanical polishing treatment to obtain the ceramic substrate (Examples 1 to 5), regardless of the presence or absence of the mechanical polishing treatment, It can be seen that the ceramic substrate and the conductor layer exhibit high bonding strength of 15 mg / ⁇ m 2 or more.
- the particles of the crystalline phase consisting of the filler protrude from the surface of the obtained ceramic substrate, and the anchor effect by this is caused. Then, it was found that the bonding strength between the ceramic substrate and the conductor layer was improved.
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Abstract
Description
図1~図6は、本発明のセラミック基板の製造方法の一例を示す工程図である。なお、図4~図6では、前記製造方法における研磨工程を、セラミック焼結体の表面付近を拡大して示している。また、以下に示す製造方法はあくまで一例であって、本発明は以下の方法に限定されるものではない。
次に、上述のようにして得たセラミック基板を利用した機能性セラミック基板について説明する。図7は、本発明の機能性セラミック基板の一例を示す断面図である。なお、上述した図1~図6に関するセラミック基板と同一あるいは類似の構成要素に関しては、同一の参照符号を用いている。
次に、上述のようにして得た機能性セラミック基板を用いたプローブカードについて説明する。図8は、本発明のプローブカードの一例を示す断面図である。なお、上述した図1~図6に関するセラミック基板及び図7に示す機能性セラミック基板と同一あるいは類似の構成要素に関しては、同一の参照符号を用いている。
SiO2,Al2O3,及びB2O3を主成分とするホウケイ酸系ガラス粉末とアルミナ粉末とを、重量比で50:50、総量で1kgとなるようにしてアルミナ製のポットに入れ、さらにアクリル樹脂バインダ120g、溶剤(MEK)及び可塑剤(DOP)を前記ポットに入れて、5時間混合し、セラミックスラリーを得た。次いで、このセラミックスラリーからドクターブレード法により厚み0.15mmのグリーンシートを得た。なお、前記アルミナ粉末の平均粒径は2μmであり、比表面積は1m2/gであった。
上述のようにして得たグリーンシートに孔あけ加工を施すとともに導体を充填し、ビア導体層を形成するとともに、各グリーンシート上に内部導体層を形成して、図1に示すようなグリーンシート多層体を得た。次いで、このようにして得たグリーンシート多層体を、850℃で30分間焼成し、図2に示すようなセラミック焼結体を得た。
上述のようにして得たセラミック基板の、アルミナ砥粒による研磨面上に、スパッタ、メッキ及び露光現像処理を行うことによって導体層を形成し、この導体層の接合強度を調べた。なお、接合強度は、スパッタ法およびメッキ法を用いて作製した薄膜を露光現像処理することにより□100μm×t40μmのパッドを作製し、そのパッドの側方より高さ10μmの高さにてシェアテスター(DAGE4000)を用いてシェア強度を測定した。得られた強度とパッドの接着面積(10000μm2)から接合強度を導出した。結果を表1に示す。
Claims (11)
- 非晶質相からなる母材と、
前記母材中に分散してなる結晶質相からなる粒子とを具え、
前記粒子の一部が前記母材の少なくとも一方の表面から突出していることを特徴とする、セラミック基板。 - 前記非晶質相はガラスを含み、前記結晶質相は結晶性のフィラーを含むことを特徴とする、請求項1に記載のセラミック基板。
- 前記母材から突出した前記粒子の割合が、前記母材の前記少なくとも一方の表面の面積に対して、0.30~0.45の割合であることを特徴とする、請求項1又は2に記載のセラミック基板。
- 前記母材の少なくとも一方の表面から突出してなる、前記粒子の一部の表面は平坦であることを特徴とする、請求項1~3のいずれか一に記載のセラミック基板。
- 非晶質相からなる母材、及び前記母材中に分散してなる結晶質相からなる粒子を有し、 前記粒子の一部が前記母材の少なくとも一方の表面から突出しているセラミック基板と、
前記セラミック基板の前記母材の前記少なくとも一方の表面上において、前記突出した粒子を介して形成された導電体と、
前記導電体に取り付けられた金属部と、
を具えることを特徴とする、機能性セラミック基板。 - 前記セラミック基板において、前記非晶質相はガラスを含み、前記結晶質相は結晶性のフィラーを含むことを特徴とする、請求項5に記載の機能性セラミック基板。
- 前記セラミック基板において、前記母材から突出した前記粒子の割合が、前記母材の前記少なくとも一方の表面の面積に対して、0.30~0.45の割合であることを特徴とする、請求項5又は6に記載の機能性セラミック基板。
- 前記母材の少なくとも一方の表面から突出してなる、前記粒子の一部の表面は平坦であることを特徴とする、請求項5~7のいずれか一に記載の機能性セラミック基板。
- 請求項5~8のいずれか一に記載の機能性セラミック基板を具え、
前記金属部はプローブピンであることを特徴とする、プローブカード。 - 非晶質相からなる母材、及び前記母材中に分散してなる結晶質相からなる粒子を有するセラミック焼成体を形成する工程と、
前記セラミック焼成体の少なくとも一方の主面に対して、化学機械研磨を施す工程と、
を具えることを特徴とする、セラミック基板の製造方法。 - 前記セラミック焼成体の形成後であって、前記化学機械研磨処理の前において、前記セラミック焼成体の前記少なくとも一方の主面に対して機械研磨処理を施す工程を具えることを特徴とする、請求項10に記載のセラミック基板の製造方法。
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US8933717B2 (en) | 2012-06-21 | 2015-01-13 | International Business Machines Corporation | Probe-on-substrate |
WO2015048808A1 (en) * | 2013-09-30 | 2015-04-02 | Wolf Joseph Ambrose | Silver thick film paste hermetically sealed by surface thin film multilayer |
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US10001509B2 (en) * | 2014-10-30 | 2018-06-19 | Tongfu Microelectronics Co., Ltd. | Semiconductor testing fixture and fabrication method thereof |
US10006943B2 (en) * | 2014-10-30 | 2018-06-26 | Tongfu Microelectronics Co., Ltd. | Semiconductor testing fixture and fabrication method thereof |
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