WO2009107229A1 - シート状構造体、半導体装置及び炭素構造体の成長方法 - Google Patents
シート状構造体、半導体装置及び炭素構造体の成長方法 Download PDFInfo
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- WO2009107229A1 WO2009107229A1 PCT/JP2008/053635 JP2008053635W WO2009107229A1 WO 2009107229 A1 WO2009107229 A1 WO 2009107229A1 JP 2008053635 W JP2008053635 W JP 2008053635W WO 2009107229 A1 WO2009107229 A1 WO 2009107229A1
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 607
- 238000000034 method Methods 0.000 title claims description 70
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 239000010439 graphite Substances 0.000 claims abstract description 166
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 166
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims description 124
- 239000002184 metal Substances 0.000 claims description 124
- 230000003197 catalytic effect Effects 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 83
- 238000004519 manufacturing process Methods 0.000 claims description 48
- 239000003054 catalyst Substances 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- 239000000945 filler Substances 0.000 claims description 33
- 239000002041 carbon nanotube Substances 0.000 description 377
- 229910021393 carbon nanotube Inorganic materials 0.000 description 377
- 239000010408 film Substances 0.000 description 312
- 239000010410 layer Substances 0.000 description 295
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 39
- 239000000463 material Substances 0.000 description 32
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 17
- 229910010413 TiO 2 Inorganic materials 0.000 description 16
- 230000017525 heat dissipation Effects 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 10
- 239000004925 Acrylic resin Substances 0.000 description 9
- 229920000178 Acrylic resin Polymers 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 8
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000002048 multi walled nanotube Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000002109 single walled nanotube Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000004050 hot filament vapor deposition Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 239000012766 organic filler Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/08—Aligned nanotubes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1094—Conducting structures comprising nanotubes or nanowires
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Definitions
- the present invention relates to a sheet-like structure having a linear structure made of a carbon element, a semiconductor device, and a carbon structure growth method.
- Electronic components used in central processing units (CPU: Central Processing Unit) of servers and personal computers are heat conductive sheets such as indium sheets provided directly above them to efficiently dissipate heat generated from semiconductor elements.
- the heat spreader made of a material having a high thermal conductivity such as copper is disposed through the structure.
- indium has risend due to a significant increase in demand for rare metals in recent years, and an alternative material cheaper than indium is expected.
- the thermal conductivity (50 W / m ⁇ K) of indium is not high, and a material having higher thermal conductivity in order to dissipate the heat generated from the semiconductor element more efficiently. Is desired.
- Carbon nanotubes not only have a very high thermal conductivity (1500 W / m ⁇ K), but also are excellent in flexibility and heat resistance, and have a high potential as a heat dissipation material.
- Patent Document 1 discloses a heat conductive sheet in which carbon nanotubes are dispersed in a resin.
- Patent Document 2 discloses a heat conductive sheet in which a bundle of carbon nanotubes oriented and grown on a substrate is embedded with a resin or the like.
- Carbon nanotubes are also attracting attention as wiring materials used in semiconductor devices and the like. Many problems such as reliability degradation due to electromigration have become apparent in copper wiring that is currently used mainly in integrated circuit devices as devices become finer. Therefore, carbon nanotubes having excellent electrical conductivity and excellent characteristics such as allowable current density and ballistic electron transport characteristics that are about 1000 times higher than copper are expected as next-generation wiring materials.
- Non-Patent Document 1 JP 2005-150362 A JP 2006-147801 A JP 2006-303240 A JP 09-031757 A JP 2004-262666 A Japanese Patent Laying-Open No. 2005-285821 JP 2006-297549 A JP 2006-339552 A JP 2003-238123 A M. Nihei et al., "Electrical properties of carbon nanotube bundles for future via interconnects", Japanese Journal of Applied Physics, Vol. 44, No. 4A, 2005, pp.1626-1628
- the heat conductive sheet described in Patent Document 1 is obtained by simply dispersing carbon nanotubes in a resin, and thermal resistance is generated at the contact points between the dispersed carbon nanotubes.
- carbon nanotubes have the characteristic that the thermal conductivity in the direction along the orientation direction is the smallest.
- the orientation directions of the carbon nanotubes are not uniform, and the high thermal conductivity of the carbon nanotubes. I could not make full use of the degree.
- the thermal conductive sheet described in Patent Document 2 uses a bundle of carbon nanotubes that are oriented and grown on the substrate, and therefore achieves higher thermal conductivity than the thermal conductive sheet described in Patent Document 1. Can do.
- the thermal conductivity of the resin itself is about 1 (W / m ⁇ K), it is about three orders of magnitude lower than the high thermal conductivity in the vertical direction due to the carbon nanotubes, and the heat dissipation effect in the horizontal direction is low. It was very low.
- a wiring material it is desired that not only a wiring structure connected in the vertical direction as described in Non-Patent Document 1, but also a wiring structure connected in the horizontal direction can be formed.
- the lateral wiring using carbon nanotubes has many difficulties in controlling the lateral growth of the nanotubes, and also creates an electrode block that connects the via wiring and the lateral wiring that are the starting point of the lateral wiring. This is difficult in terms of process and has not been realized yet.
- An object of the present invention is to provide a sheet-like structure excellent in thermal conductivity and conductivity in a direction parallel to the surface of the sheet as well as a direction perpendicular to the surface of the sheet, and a method for producing the same.
- Another object of the present invention is to provide a semiconductor device having a low-resistance via wiring, a low-resistance lateral wiring layer connected to the via wiring, and a manufacturing method thereof.
- a linear structure including a plurality of carbon elements arranged with a first gap between each other, and a plurality of arranged with a second gap larger than the first gap.
- a sheet-like structure that is filled and has the plurality of linear structure bundles and a filling layer that holds the graphite layer.
- a step of forming a first catalytic metal film on a first region of a substrate, and a second region adjacent to the first region of the substrate A step of forming a second catalytic metal film different from the first catalytic metal film, and a plurality of lines made of carbon elements on the first region using the first catalytic metal film as a catalyst.
- a filling layer is formed by filling the filler and holding the linear structure bundle.
- the shape change of the linear structure bundle can be prevented.
- the sheet-like structure in which the linear structure bundle is oriented in the film thickness direction of the sheet can be easily formed.
- the both ends of the linear structure bundle can be easily exposed from the filling layer, and the thermal conductivity and electrical conductivity with respect to the adherend can be improved. Thereby, the reliability of the electronic device using this sheet-like structure can be improved.
- the graphite layer is formed in the gap between the linear structure bundles by connecting to the linear structure bundle, the thermal conductivity and the electric conductivity in the direction parallel to the surface of the sheet can be improved.
- the linear structure bundle and the graphite layer can be formed at the same time, the carbon nanotube sheet can be formed without significantly changing the manufacturing process. Thereby, the increase in manufacturing cost can be prevented.
- the electrical resistance of the via wiring and the wiring layer is greatly increased. Can be reduced. Thereby, the characteristics of the semiconductor device can be improved.
- the via wiring and the wiring layer can be formed at the same time, the wiring structure can be formed without significantly changing the manufacturing process. Thereby, the increase in manufacturing cost can be prevented.
- FIG. 1 is a plan view and a schematic sectional view showing the structure of a carbon nanotube sheet according to a first embodiment of the present invention.
- FIG. 2 is a plan view showing the shape of a carbon nanotube bundle in the carbon nanotube sheet according to the first embodiment of the present invention.
- FIG. 3 is a schematic cross-sectional view showing the structure of the carbon nanotube sheet according to the first embodiment of the present invention.
- FIG. 4 is a process cross-sectional view (part 1) illustrating the method of manufacturing the carbon nanotube sheet according to the first embodiment of the present invention.
- FIG. 5 is a process cross-sectional view (part 2) illustrating the method of manufacturing the carbon nanotube sheet according to the first embodiment of the present invention.
- FIG. 1 is a plan view and a schematic sectional view showing the structure of a carbon nanotube sheet according to a first embodiment of the present invention.
- FIG. 2 is a plan view showing the shape of a carbon nanotube bundle in the carbon nanotube sheet according to the first embodiment of the present invention
- FIG. 6 is a plan view and a schematic sectional view showing the structure of the carbon nanotube sheet according to the second embodiment of the present invention.
- FIG. 7 is a process cross-sectional view (part 1) illustrating the method of manufacturing the carbon nanotube sheet according to the second embodiment of the present invention.
- FIG. 8 is a process cross-sectional view (part 2) illustrating the method of manufacturing the carbon nanotube sheet according to the second embodiment of the present invention.
- FIG. 9 is a schematic cross-sectional view showing the structure of a carbon nanotube sheet according to a modification of the second embodiment of the present invention.
- FIG. 10 is a schematic cross-sectional view showing the structure of the semiconductor device according to the third embodiment of the present invention.
- FIG. 11 is a process cross-sectional view (No.
- FIG. 12 is a process cross-sectional view (part 1) illustrating the method for manufacturing the semiconductor device according to the third embodiment of the invention.
- FIG. 13 is a process cross-sectional view (No. 1) illustrating the method for manufacturing the semiconductor device according to the third embodiment of the invention.
- FIG. 14 is a schematic cross-sectional view showing the structure of the semiconductor device according to the fourth embodiment of the present invention.
- FIG. 15 is a process cross-sectional view (No. 1) illustrating the method for manufacturing the semiconductor device according to the fourth embodiment of the invention.
- FIG. 16 is a process cross-sectional view (part 2) illustrating the method for manufacturing the semiconductor device according to the fourth embodiment of the invention.
- FIG. 17 is a process cross-sectional view (No. 3) illustrating the method for manufacturing the semiconductor device according to the fourth embodiment of the invention.
- FIG. 18 is a schematic cross-sectional view showing the structure of an electronic device according to the fifth embodiment of the present invention.
- FIG. 19 is a perspective view showing the structure of an electronic device according to the sixth embodiment of the present invention.
- FIG. 1 is a plan view and a schematic sectional view showing the structure of a carbon nanotube sheet according to the present embodiment
- FIG. 2 is a plan view showing the shape of a carbon nanotube bundle in the carbon nanotube sheet according to the present embodiment
- FIG. FIG. 4 and FIG. 5 are process cross-sectional views illustrating the method of manufacturing a carbon nanotube sheet according to the present embodiment.
- FIG. 1A and FIG. 1B are a plan view and a cross-sectional view showing the structure of the carbon nanotube sheet according to the present embodiment, respectively.
- the carbon nanotube sheet (sheet-like structure) 10 has a plurality of carbon nanotube bundles (linear structure bundles) 12 arranged at intervals (see FIG. 1A). .
- a graphite layer 14 formed on one surface side of the sheet and a filling layer 16 made of a resin material or the like are embedded in the gap between the carbon nanotube bundles 12 (see FIGS. 1A and 1B).
- the filling layer 16 is also embedded in the gaps in the carbon nanotube bundle 12 and the graphite layer 14.
- the graphite layer 14 is thermally and electrically connected to the carbon nanotube bundle 12.
- Each carbon nanotube bundle 12 is formed so as to extend in a direction perpendicular to the surface of the sheet, and a plurality of carbon nanotubes (linear structures made of carbon elements) oriented in a direction perpendicular to the surface of the sheet. have.
- the carbon nanotube may be either a single-walled carbon nanotube or a multi-walled carbon nanotube.
- the density of the carbon nanotubes contained in the carbon nanotube bundle 12 is desirably 1 ⁇ 10 10 pieces / cm 2 or more from the viewpoint of heat dissipation and electrical conductivity.
- the length (sheet thickness) of the carbon nanotube bundle 12 is determined by the application of the carbon nanotube sheet 10 and is not particularly limited, but can be preferably set to a value of about 5 ⁇ m to 500 ⁇ m.
- a gap is provided between the carbon nanotube bundles 12, and a filling layer 16 is formed in the gap. This enhances the permeability of the filler when forming the filling layer 16 between the carbon nanotubes, suppresses the shape change such as the carbon nanotubes falling sideways, and maintains the orientation originally held by the carbon nanotubes. (See the manufacturing method described later).
- the width of the formation region of the carbon nanotube bundle 12 is not particularly limited, but when the formation region is, for example, a circle, the diameter can be set in a range of, for example, 10 ⁇ m to 1000 mm.
- the necessary gap between the carbon nanotube bundles 12 varies depending on the viscosity or the like of the filler used as the filling layer 16, but cannot be determined unconditionally.
- the gap between the carbon nanotubes constituting each of the carbon nanotube bundles 12 can be determined. It can be set to a sufficiently wide width, preferably about 0.1 ⁇ m to 200 ⁇ m.
- the surface density of the carbon nanotubes in the sheet surface decreases, that is, the thermal conductivity as a sheet decreases.
- the surface density of the carbon nanotubes in the sheet surface also varies depending on the size of the carbon nanotube bundle 12. Therefore, the interval between the carbon nanotube bundles 12 needs to be appropriately set in consideration of the size of the carbon nanotube bundles 12 according to the thermal conductivity required for the sheet.
- each carbon nanotube bundle 12 is not limited to the circular shape shown in FIG.
- a polygon such as a triangle, a quadrangle, or a hexagon may be used.
- the arrangement of the plurality of carbon nanotube bundles 12 is not limited to the circular close packed array as shown in FIG.
- the carbon nanotube bundles 12 may be arranged so as to be positioned at each lattice point of a square lattice.
- the carbon nanotube bundles 12 having a triangular planar shape may be arranged for each line by changing the vertical direction.
- the carbon nanotube bundle 12 may be formed in a stripe pattern.
- the carbon nanotube bundle 12 may have a comb-teeth pattern.
- the graphite layer 14 is made of graphite having a layered structure parallel to the surface of the sheet, and is formed so as to be connected to the side surface of the carbon nanotube bundle 12.
- the thickness of the graphite layer 14 is, for example, about several nm to several hundred nm.
- the constituent material of the filling layer 16 is not particularly limited as long as it shows liquid properties when carbon nanotubes are embedded and can be cured thereafter.
- an acrylic resin, an epoxy resin, a silicone resin, a polyimide resin, or the like can be applied as the organic filler.
- a coating-type insulating film forming composition such as SOG (Spin On Glass) can be applied.
- a metal material such as indium, solder, or a metal paste (eg, silver paste) can also be used.
- conductive polymers such as polyaniline and polythiophene can also be applied.
- additives may be dispersed and mixed in the packed layer 16 as necessary.
- the additive for example, a substance having high thermal conductivity or a substance having high conductivity can be considered.
- the thermal conductivity of the filled layer 16 portion can be improved, and the thermal conductivity of the entire carbon nanotube sheet can be improved.
- the conductivity of the filling layer 16 portion can be improved by dispersing and mixing an additive having high conductivity in the filling layer 16 portion.
- the conductivity of the nanotube sheet as a whole can be improved.
- an insulating material having low thermal conductivity such as an organic filler is used as the filling layer 16.
- an insulating material having high thermal conductivity carbon nanotube, metal material, aluminum nitride, silica, alumina, graphite, fullerene, or the like can be used.
- the highly conductive material carbon nanotubes, metal materials, and the like can be applied.
- the carbon nanotube sheet 10 includes the carbon nanotube bundle 12 oriented in a direction perpendicular to the surface of the sheet, and the graphite layer 14 made of graphite having a layered structure parallel to the surface of the sheet.
- Carbon nanotubes have a very high thermal conductivity of about 1500 (W / m ⁇ K) along the alignment direction.
- Graphite does not have the thermal conductivity of carbon nanotubes, but the thermal conductivity in the direction parallel to the layer surface (a-axis) is about 500 (W / m ⁇ K), which is also very high heat. It has conductivity.
- the carbon nanotube sheet 10 is configured by combining the carbon nanotube bundle 12 and the graphite layer 14 as in this embodiment, so that the thermal conductivity in the direction perpendicular to the surface of the sheet is mainly the carbon nanotube (carbon nanotube bundle). 12), and thermal conductivity in a direction parallel to the surface of the sheet can be ensured mainly by graphite (graphite layer 14).
- Graphite has a thermal conductivity of 500 times or more compared to a resin material (thermal conductivity: about 1 (W / m ⁇ K)). Therefore, by providing the graphite layer 14, the heat dissipation in the direction parallel to the surface of the sheet can be greatly improved by 500 times or more compared with the case where the graphite layer 14 is not formed.
- the upper end and the lower end of the carbon nanotube bundle 12 are not covered with the filling layer 16. Thereby, when the carbon nanotube sheet 10 is brought into contact with the heat radiating body or the heat generating body, the carbon nanotube bundle 12 is in direct contact with the heat radiating body or the heat generating body, so that the heat conduction efficiency can be greatly increased.
- the carbon nanotube bundle 12 can be used as a wiring body that penetrates the sheet by exposing the upper and lower ends of the carbon nanotube bundle 12.
- the graphite layer 14 can also be used as a wiring body in a direction parallel to the surface of the sheet. That is, the carbon nanotube sheet 10 according to the present embodiment can be used not only as a heat conductive sheet but also as a wiring sheet.
- the relationship between the height of the carbon nanotube bundle 12 and the thickness of the filling layer 16 may be the same as shown in FIG. As shown in FIG. 3B, one end portion of the carbon nanotube bundle 12 may be recessed from the surface of the filling layer 16, and one end portion of the carbon nanotube bundle 12 is the surface of the filling layer 16 as shown in FIG. It may be more protruding. These shapes can be created separately by changing the material and manufacturing conditions of the filling layer 16 (see the manufacturing method described later).
- the shape of FIG. 3B can be expected to relieve the stress applied to the carbon nanotube bundle 12 by the filling layer 16 when the carbon nanotube sheet 10 is disposed between the heat radiating body and the heat generating body and bonded.
- the shape of FIG.3 (c) it can anticipate that the adhesiveness of the carbon nanotube bundle 12 with respect to a heat radiator and a heat generating body will improve, and a thermal conductivity will improve. It is desirable that the relationship between the height of the carbon nanotube bundle 12 and the thickness of the filling layer 16 is appropriately set according to the purpose of use of the carbon nanotube sheet 10 and the stress applied to the sheet.
- a substrate 30 to be used as a base for forming the carbon nanotube sheet 10 is prepared.
- a semiconductor substrate such as a silicon substrate, or an insulating substrate such as an alumina (sapphire) substrate, an MgO substrate, or a glass substrate can be used.
- a thin film may be formed on these substrates.
- a silicon substrate having a silicon oxide film with a thickness of about 300 nm can be used.
- the substrate 30 is peeled off after the carbon nanotube sheet 10 is formed.
- the substrate 30 at least the surface in contact with the carbon nanotube sheet 10 is made of a material that can be easily peeled off from the carbon nanotube sheet 10, or is selectively etched with respect to the carbon nanotube sheet 10. It is desirable that the material is made of a material that can be used.
- a carbon nanotube sheet 10 is formed on the surface of the substrate 30 by forming a material having a low adhesion to the acrylic resin, such as a silicon oxide film or a silicon nitride film. Can be easily peeled off.
- the surface of the substrate 30 is made of a material that can be selectively etched with respect to the carbon nanotube sheet 10 such as a silicon oxide film or a silicon nitride film, and the carbon nanotube sheet is removed by etching. 10 can be released from the substrate 30.
- an Fe (iron) film having a thickness of about 0.3 to 10 nm, for example, 2.5 nm is formed on the substrate 30 by, eg, sputtering, and a catalytic metal film 32a made of Fe is formed (FIG. 4 ( a)).
- the catalytic metal film 32a may be formed by an electron beam evaporation method, an MBE method, or the like.
- the catalyst metal in addition to Fe, Co (cobalt), Ni (nickel), Au (gold), Ag (silver), Pt (platinum), or an alloy containing at least one of these materials may be used.
- metal fine particles produced by controlling the size in advance using a differential electrostatic classifier (DMA) or the like may be used as the catalyst.
- the metal species may be the same as in the case of the thin film.
- Mo mobdenum
- Ti titanium
- Hf hafnium
- Zr zirconium
- Nb niobium
- V vanadium
- TaN tantalum nitride
- TiSi x titanium
- Al aluminum
- Al 2 O 3 aluminum oxide
- TiO x titanium oxide
- Ta tantalum
- W tungsten
- Cu copper
- Au gold
- Pt platinum
- Pd platinum
- a film made of (palladium), TiN (titanium nitride), or the like, or a film made of an alloy containing at least one of these materials may be formed.
- a stacked structure of Fe (2.5 nm) / Al (10 nm), a stacked structure of Co (2.6 nm) / TiN (5 nm), and the like can be applied.
- metal fine particles for example, a laminated structure such as Co (average diameter: 3.8 nm) / TiN (5 nm) can be applied.
- a photoresist film 34 is formed on the catalytic metal film 32a by spin coating.
- an opening 36 is formed in the photoresist film 34 by photolithography so as to cover the area where the carbon nanotube bundle 12 is to be formed and expose the area where the graphite layer 14 is to be formed.
- the pattern of the openings 36 for example, the pattern shown in FIG. 1A is used.
- the diameter of the openings 36 (diameter of the formation region of the carbon nanotube bundle 12) is 100 ⁇ m, and the openings 36 are between the carbon nanotube bundles 12. Is set to 20 ⁇ m.
- various patterns as shown in FIGS. 3A to 3E can be applied in addition to the pattern shown in FIG. it can.
- the catalyst metal film 32b is formed on the photoresist film 34 and on the catalyst metal film 32a in the opening 36 (FIG. 4B).
- the constituent material of the catalyst metal film 32b the same catalyst metal material as that of the catalyst metal film 32a is used.
- the catalytic metal film 32b may be formed by an electron beam evaporation method, an MBE method, or the like.
- the catalyst metal film 32b on the photoresist film 34 is lifted off together with the photoresist film 34, and the catalyst metal film 32b is selectively left on the catalyst metal film 32b in the region where the graphite layer 14 is to be formed.
- a catalytic metal film 32a made of an Fe film having a film thickness of 2.5 nm is formed in a region where the carbon nanotube bundle 12 is to be formed, and an area where the graphite layer 14 is to be formed is made of an Fe film having a thickness of 100 nm.
- Catalyst metal films 32a and 32b are formed (FIG. 4C).
- carbon nanotubes and graphite can be grown at the same time by appropriately setting the film thickness and growth conditions of the catalytic metal films 32a and 32b.
- the catalytic metal film In the region where the catalytic metal film is thin (the region where carbon nanotube bundles are to be formed), the catalytic metal aggregates into fine particles depending on the temperature during growth. Thereby, the growth proceeds with the catalytic metal fine particles as nuclei, and carbon nanotubes are formed. On the other hand, in the region where the catalyst metal film is thick (the region where the graphite layer 14 is to be formed), the catalyst metal does not aggregate at the growth temperature and remains in a film shape. As a result, the growth proceeds flatly with the catalytic metal film as a nucleus, and graphite is formed.
- a catalyst metal film having a film thickness is formed in the carbon nanotube bundle formation region where the catalyst metal aggregates and becomes fine particles depending on the growth temperature, and the graphite layer formation region is formed in the growth region.
- a catalyst metal film having a film thickness at which the catalyst metal does not aggregate at the temperature is formed.
- a catalytic metal film 32a made of an Fe film with a thickness of 2.5 nm is formed in a region where the carbon nanotube bundle 12 is to be formed, and catalytic metal films 32a and 32b made of an Fe film with a thickness of 100 nm are formed in the region where the graphite layer 14 is to be formed.
- a mixed gas of acetylene and argon (partial pressure ratio 1: 9) is used as the source gas, the total gas pressure in the film forming chamber is 1 kPa, the temperature is 620 ° C., and the growth time is 30 minutes.
- the number of layers is 3 to 6 (average 4 layers), the diameter is 4 to 8 nm (average 6 nm), the length is 100 ⁇ m, and the density is 1 ⁇ 10 11.
- Multi-walled carbon nanotubes of about 1 / cm 2 were grown, and graphite having a film thickness of 13 nm could be grown on the region where the graphite layer 14 was to be formed.
- the relationship between the thickness of the Fe film as the catalytic metal film and the growth was examined, and the following results were obtained.
- the thickness of the catalytic metal film was less than 10 nm, carbon nanotubes grew.
- the thickness of the catalytic metal film was 10 nm or more and less than 20 nm, both carbon nanotubes and graphite grew.
- the thickness of the catalytic metal film was 20 nm to 200 nm, graphite grew.
- the catalyst metal becomes more fine as the growth temperature increases.
- the conditions for forming fine particles vary depending on the type of catalyst metal. Therefore, it is desirable that the film thickness of the catalyst metal film is appropriately adjusted according to the type of catalyst metal, the growth temperature, and the like.
- Carbon nanotubes and graphite may be formed by other film forming methods such as a thermal CVD method and a remote plasma CVD method.
- the growing carbon nanotube may be a single-walled carbon nanotube.
- hydrocarbons such as methane and ethylene other than acetylene
- alcohols such as ethanol and methanol.
- the carbon nanotube bundle 12 having a plurality of carbon nanotubes oriented in the normal direction of the substrate 30 (vertical orientation) and the graphite layer 14 made of graphite having a layered structure parallel to the surface of the sheet are formed on the substrate 30. (FIG. 5A).
- a filler to be the filling layer 16 is applied by, eg, spin coating.
- the viscosity of the coating solution and the rotation speed of the spin coater are appropriately set so that the filler does not cover the carbon nanotube bundle 12.
- an acrylic resin when the height of the carbon nanotube bundle 12 and the thickness of the filler layer 16 are substantially equal, for example, an acrylic resin having a viscosity of 440 mPa ⁇ s is used under the condition of 2000 rpm for 20 seconds. This can be realized by coating.
- the filling layer 16 when the filling layer 16 is made thinner than the height of the carbon nanotube bundle 12, it can be realized, for example, by applying an acrylic resin having a viscosity of 440 mPa ⁇ s under the condition of 4000 rpm for 20 seconds. Or it can implement
- MEK methyl ethyl ketone
- the upper surface of the carbon nanotube bundle 12 may be exposed by ashing or the like.
- a metal thin film may be deposited on the carbon nanotube bundle 12 and the graphite layer 14 before applying the filler.
- the metal thin film for example, gold (Au) with a film thickness of 300 nm is deposited.
- the filler is not particularly limited as long as it shows liquid properties and can be cured thereafter.
- an acrylic resin, an epoxy resin, a silicone resin, a polyimide resin, or the like can be applied as the organic filler.
- a coating type insulating film forming composition such as SOG can be applied.
- a metal material such as indium, solder, or a metal paste (eg, silver paste) can also be used.
- conductive polymers such as polyaniline and polythiophene can also be applied.
- the applied filler is first spread over the entire surface of the substrate 30 along the gap. After that, the filler penetrates into the carbon nanotube bundle 12 and the graphite layer 14.
- the filler spreads over the entire surface of the substrate 30 and then penetrates into the carbon nanotube bundles 12.
- the filler previously filled between the carbon nanotube bundles 12 serves as a supporter for maintaining the shape of the carbon nanotubes when the filler penetrates into the carbon nanotube bundles.
- the shape change can be suppressed.
- the filled layer 16 can be formed while maintaining the orientation direction of the carbon nanotube bundle 12.
- the necessary gap between the carbon nanotube bundles 12 varies depending on the type and viscosity of the filler, and thus cannot be determined in general. However, according to the study by the present inventors, an interval of 0.1 ⁇ m or more should be provided. Thus, it has been confirmed that the shape change of the carbon nanotube bundle can be prevented.
- the resin layer 16 may be formed by immersing the substrate 30 in a filler solution (so-called dip method). Also in this case, a change in the shape of the carbon nanotube bundle can be prevented by the gap provided between the carbon nanotube bundles 12.
- the filler is cured to form the filler layer 16 made of the filler (FIG. 5B).
- a photocurable material such as an acrylic resin
- the filler can be cured by light irradiation.
- a thermosetting material such as an epoxy resin or a silicone resin
- the filler can be cured by heat treatment.
- an epoxy resin it can be cured by heat treatment at 150 ° C. for 1 hour, for example.
- a silicone resin it can be cured by heat treatment at 200 ° C. for 1 hour, for example.
- CMP chemical mechanical polishing
- the carbon nanotube bundle 12, the graphite layer 14, and the resin layer 16 are peeled from the substrate 30 to obtain the carbon nanotube sheet 10 (FIG. 5C).
- the surface of the substrate 30 is made of a material that can easily peel the carbon nanotube sheet 10, for example, a silicon oxide film or a silicon nitride film is formed on the surface of the substrate 30, and the filling layer 16 is made of acrylic. In the case of being formed of resin, the substrate 30 can be easily peeled from the carbon nanotube sheet 10.
- the carbon nanotube sheet 10 cannot be easily peeled off on the surface of the substrate 30 but a layer that can be selectively etched with respect to the carbon nanotube sheet 10 is formed, for example, silicon oxide is formed on the surface of the substrate 30.
- silicon oxide film or the silicon nitride film is wet etched using a hydrofluoric acid aqueous solution or hot phosphoric acid.
- the carbon nanotube sheet 10 can be released from the substrate 30 by removing by the above.
- the substrate 30 is formed of a material that cannot easily separate the carbon nanotube sheet 10 and cannot be selectively removed
- the substrate 30 is a sapphire substrate and the filling layer 16 is silicone.
- the carbon nanotube sheet 10 can be peeled from the substrate 30 by inserting a sharp blade between the substrate 30 and the carbon nanotube sheet 10.
- the carbon nanotube bundle 12 and the graphite layer 14 are in direct contact with the substrate 30 before peeling, the carbon nanotube bundle 12 and the graphite layer 14 are exposed on the surface of the peeled carbon nanotube sheet 10 on the substrate 30 side. . Therefore, in the carbon nanotube sheet 10 formed by the manufacturing method described above, the carbon nanotube bundle 12 can be exposed on both surfaces of the sheet, and the graphite layer 14 can be exposed on one surface. It is also possible to connect to the exposed portions of the carbon nanotube bundle 12 or the graphite layer 14 via a metal such as In, solder, plating such as AuSn, or a metal paste.
- a metal such as In, solder, plating such as AuSn, or a metal paste.
- the thermal resistance of an indium sheet conventionally used is 0.21 (° C./W), whereas the thermal resistance of a carbon nanotube sheet composed only of carbon nanotubes manufactured by the same process as described above is 0.13. (° C / W). Since the difference in thermal conductivity is reflected in the difference in thermal resistance, the thermal resistance is further reduced in the carbon nanotube of this embodiment in which a graphite layer capable of radiating heat in the plane parallel direction is added in addition to the carbon nanotube. It is clear.
- a filling layer is formed by filling the filler and holding the carbon nanotube bundle.
- the shape change of the carbon nanotube bundle can be prevented.
- both ends of the carbon nanotube bundle can be exposed from the filling layer, the thermal conductivity and electrical conductivity with respect to the adherend can be improved.
- the thermal conductivity and the electric conductivity in the direction parallel to the surface of the sheet can be improved.
- the carbon nanotube bundle and the graphite layer can be formed at the same time, the carbon nanotube sheet can be formed without significantly changing the manufacturing process. Thereby, the increase in manufacturing cost can be prevented.
- FIGS. 1 to 5 Components similar to those of the carbon nanotube sheet and the manufacturing method thereof according to the first embodiment shown in FIGS. 1 to 5 are denoted by the same reference numerals, and description thereof is omitted or simplified.
- FIG. 6 is a plan view and a schematic cross-sectional view showing the structure of the carbon nanotube sheet according to the present embodiment
- FIG. 7 is a schematic cross-sectional view showing the structure of the carbon nanotube sheet according to a modification of the present embodiment
- FIGS. It is process sectional drawing which shows the manufacturing method of the carbon nanotube sheet by a form.
- FIGS. 6A and 6B are a plan view and a cross-sectional view showing the structure of the carbon nanotube sheet according to the present embodiment, respectively.
- the carbon nanotube sheet 10 has a plurality of carbon nanotube bundles 12 arranged at intervals (see FIG. 6A).
- a carbon nanotube layer (linear structure layer made of carbon element) 18 having one end exposed on the surface of the sheet, a graphite layer 20 formed on the carbon nanotube layer 18, and a resin material A filling layer 16 made of the same is embedded (see FIGS. 6A and 6B).
- the graphite layer 20 is thermally and electrically connected to the carbon nanotube bundle 12 and the carbon nanotube layer 20.
- a structure formed of a carbon nanotube bundle, a carbon nanotube layer, a graphite layer, or a combination thereof may be referred to as a carbon structure.
- the carbon nanotube bundle 12 is formed so as to extend in a direction perpendicular to the sheet surface, and has a plurality of carbon nanotubes oriented in a direction perpendicular to the sheet surface.
- the carbon nanotubes constituting the carbon nanotube bundle 12 may be either single-walled carbon nanotubes or multi-walled carbon nanotubes.
- the density of the carbon nanotubes contained in the carbon nanotube bundle 12 is desirably 1 ⁇ 10 10 pieces / cm 2 or more from the viewpoint of heat dissipation and electrical conductivity.
- the length (sheet thickness) of the carbon nanotube bundle 12 is determined by the application of the carbon nanotube sheet 10 and is not particularly limited, but can be preferably set to a value of about 5 ⁇ m to 500 ⁇ m.
- a gap is provided between the carbon nanotube bundles 12 on the graphite layer 20, and a filling layer 16 is formed in the gap.
- This enhances the permeability of the filler when forming the filling layer 16 between the carbon nanotubes, suppresses the shape change such as the carbon nanotubes falling sideways, and maintains the orientation originally held by the carbon nanotubes. This is for the purpose (see the first embodiment).
- the shape and arrangement of the carbon nanotube bundle 12 are the same as in the first embodiment.
- the carbon nanotube layer 18 is formed so as to extend in a direction perpendicular to the surface of the sheet, and has a plurality of carbon nanotubes oriented in a direction perpendicular to the surface of the sheet.
- the carbon nanotubes constituting the carbon nanotube layer 18 may be single-walled carbon nanotubes or multi-walled carbon nanotubes.
- the density of the carbon nanotubes contained in the carbon nanotube layer 18 is desirably 1 ⁇ 10 10 pieces / cm 2 or more from the viewpoint of heat dissipation and electrical conductivity.
- the length of the carbon nanotube layer 18 is determined by the application of the carbon nanotube sheet 10 and is not particularly limited, but can be preferably set to a value of about 5 ⁇ m to 500 ⁇ m.
- the graphite layer 20 is made of graphite having a layered structure parallel to the surface of the sheet, and is formed so as to be connected to the side surface of the carbon nanotube bundle 12 and the upper surface of the carbon nanotube layer 18.
- the thickness of the graphite layer 20 is, for example, about several nm to several tens of nm.
- the constituent material of the filling layer 16 is the same as that in the first embodiment.
- the carbon nanotube sheet 10 includes the carbon nanotube bundle 12 and the carbon nanotube layer 18 oriented in a direction perpendicular to the surface of the sheet, and the graphite layer 20 made of graphite having a layered structure parallel to the surface of the sheet. And have.
- Carbon nanotubes have a very high thermal conductivity of about 1500 (W / m ⁇ K) along the alignment direction.
- Graphite does not have the thermal conductivity of carbon nanotubes, but the thermal conductivity in the direction parallel to the layer surface (a-axis) is about 500 (W / m ⁇ K), which is also very high heat. It has conductivity.
- the carbon nanotubes mainly have thermal conductivity in the direction perpendicular to the surface of the sheet. It can be ensured by (the carbon nanotube bundle 12 and the carbon nanotube layer 18), and the thermal conductivity in the direction parallel to the surface of the sheet can be ensured mainly by graphite (graphite layer 20).
- Graphite has a thermal conductivity of 500 times or more compared to a resin material (thermal conductivity: about 1 (W / m ⁇ K)). Therefore, by providing the graphite layer 20, the heat dissipation in the direction parallel to the surface of the sheet can be greatly improved by 500 times or more compared with the case where the graphite layer 20 is not formed.
- the carbon nanotube sheet according to the present embodiment is superior to the carbon nanotube sheet according to the first embodiment in that the graphite layer 20 is indirectly connected to the heat sink and the carbon nanotube layer 18 disposed below the carbon nanotube sheet. Is connected to. That is, the carbon nanotube sheet of the present embodiment that once radiates heat to the graphite layer 20 through the carbon nanotube layer 18 is compared with the carbon nanotube sheet according to the first embodiment in which the heat radiating body and the graphite layer 20 are directly connected. And especially when the contact surface of a heat radiator and a sheet
- the upper end and the lower end of the carbon nanotube bundle 12 are not covered with the filling layer 16. Thereby, when the carbon nanotube sheet 10 is brought into contact with the heat radiating body or the heat generating body, the carbon nanotube bundle 12 is in direct contact with the heat radiating body or the heat generating body, so that the heat conduction efficiency can be greatly increased.
- the carbon nanotube bundle 12 can be used as a wiring body that penetrates the sheet by exposing the upper and lower ends of the carbon nanotube bundle 12.
- the graphite layer 20 can also be used as a wiring body in a direction parallel to the surface of the sheet. That is, the carbon nanotube sheet 10 according to the present embodiment can be used not only as a heat conductive sheet but also as a wiring sheet.
- the relationship between the height of the carbon nanotube bundle 12 and the thickness of the filling layer 16 (both in the thickness direction of the sheet) is the same as in the first embodiment.
- the carbon nanotube layer 18 and the graphite layer 20 formed between the carbon nanotube bundles 12 may be repeatedly stacked as shown in FIG. 7, for example.
- the stacked structure of the carbon nanotube layer 18 and the graphite layer 20 is a stacked structure, but three or more layers may be stacked.
- the substantial film thickness of the graphite layer 20 is increased, and the thermal conductivity and electrical conductivity in the lateral direction can be improved.
- a substrate 30 to be used as a base for forming the carbon nanotube sheet 10 is prepared.
- the substrate 30 various substrates described in the first embodiment can be used.
- a photoresist film (not shown) that exposes a region where the carbon nanotube bundle 12 is to be formed is formed on the substrate 30.
- the shape and arrangement of the region where the carbon nanotube bundle 12 is to be formed are the same as in the first embodiment.
- the region where the carbon nanotube bundle 12 is to be formed is, for example, a circular shape having a diameter of 100 ⁇ m, and the interval between adjacent regions is, for example, 100 ⁇ m.
- an Fe film having a thickness of, for example, 2.5 nm is deposited by sputtering, for example, to form a catalytic metal film 32 made of the Fe film.
- the catalyst metal the same catalyst metal material as in the first embodiment can be used.
- the catalytic metal film 32 on the photoresist film is lifted off together with the photoresist film, and the catalytic metal film 32 is selectively left in the region where the carbon nanotube bundles 12 are to be formed.
- the catalytic metal film 32 made of, for example, an Fe film having a film thickness of 2.5 nm is formed in a region where the carbon nanotube bundle 12 is to be formed (FIG. 8A).
- carbon nanotubes are grown on the substrate 30 by, for example, hot filament CVD using the catalytic metal film 32 as a catalyst.
- the carbon nanotube growth conditions are, for example, using a mixed gas of acetylene and argon (partial pressure ratio 1: 9) as a source gas, a total gas pressure in the film formation chamber of 1 kPa, a temperature of 620 ° C., and a growth time of 30 minutes. .
- a mixed gas of acetylene and argon partial pressure ratio 1: 9
- the carbon nanotubes may be formed by other film forming methods such as a thermal CVD method and a remote plasma CVD method.
- the growing carbon nanotube may be a single-walled carbon nanotube.
- hydrocarbons such as methane and ethylene other than acetylene
- alcohols such as ethanol and methanol.
- a carbon nanotube bundle 12 having a plurality of carbon nanotubes oriented in the normal direction (vertical orientation) of the substrate 30 is selectively formed on the region of the substrate 30 where the catalytic metal film 32 is formed (FIG. 8 ( b)).
- the density of carbon nanotubes in the carbon nanotube bundle 12 was about 1 ⁇ 10 11 pieces / cm 2 .
- a TiN film having a thickness of, for example, 5 nm and a Co film having a thickness of, for example, 2.6 nm are sequentially deposited on the substrate 30 on which the carbon nanotube bundles 12 are formed by, for example, sputtering.
- a catalytic metal film 38 is formed (FIG. 8C).
- the catalytic metal film 38 is not formed as a film on the carbon nanotube bundle 12.
- other materials containing Ti such as Ti (titanium) and TiO 2 (titanium oxide), can be used as the base film of the catalytic metal film 38.
- the carbon nanotube layer 18 whose upper surface is covered with the graphite layer 20 is formed on the substrate 30 by, for example, thermal CVD using the catalytic metal film 38 as a catalyst (FIG. 9A).
- the carbon nanotube layer 18 whose upper surface is covered with the graphite layer 20 is formed by growing at a relatively low temperature of about 450 ° C. to 510 ° C. using a raw material gas of hydrocarbons such as acetylene, methane, and ethylene. Can do.
- a raw material gas of hydrocarbons such as acetylene, methane, and ethylene.
- a mixed gas of acetylene and argon (partial pressure ratio 1: 9) is used as the source gas
- the total gas pressure in the deposition chamber is 1 kPa
- the temperature is 450 ° C. to 510 ° C.
- the growth time is 30 minutes.
- the carbon nanotube layer 18 having multi-walled carbon nanotubes having the number of layers of 3 to 6 (average of about 4), the diameter of 4 to 8 nm (average of 6 nm), and the length of 20 ⁇ m can be grown.
- a graphite layer 20 having a thickness of 18 nm is formed on the carbon nanotube layer 18.
- the carbon nanotube layer 18 whose upper surface is covered with the graphite layer 20 can be formed by appropriately controlling the film thickness of the catalytic metal film 38 (film thickness of the Co film) and the film formation temperature.
- Table 1 shows the results of investigating the relationship between the film thickness and deposition temperature of the Co film constituting the catalytic metal film 38 and the structure formed thereby. Note that the thickness of the TiN film constituting the catalytic metal film 38 was constant at 5 nm.
- CNT indicates that only carbon nanotubes are grown
- Graphite / CNT indicates that carbon nanotubes with graphite formed on the upper surface are formed.
- the upper surface is covered with the graphite layer.
- a carbon nanotube layer could be formed.
- the inventors of the present application have made a more specific study. As a result, when the Co film thickness is set to 2.0 nm to 7.0 nm and growth is performed at a film formation temperature of 350 ° C. to 560 ° C., the upper surface is a graphite layer. It was found that a carbon nanotube layer covered with can be formed.
- the thickness of the formed graphite layer can also be controlled by the thickness of the Co film and the deposition temperature.
- the thickness of the Co film is 2.1 nm when the thickness of the Co film is 2.1 nm.
- a graphite layer can be formed, a graphite layer having a thickness of 18 nm can be formed when the thickness of the Co film is 2.6 nm, and a thickness of 30 nm can be formed when the thickness of the Co film is 3.6 nm.
- a graphite layer could be formed.
- the film formation temperature was 450 ° C. and the Co film thickness was 3.6 nm
- a graphite layer having a thickness of 20 nm could be formed.
- the growth of the carbon nanotube layer 18 is performed at a lower temperature than the growth of the carbon nanotube bundle 12. For this reason, in the initial growth process, the Co film of the catalytic metal film 38 is not sufficiently aggregated, and it is considered that graphite is uniformly grown on the catalytic metal film 38. Thereafter, the growth of the carbon nanotubes is started together with the aggregation of the Co film, and as a result, the carbon nanotube layer 18 whose upper surface is covered with the graphite layer 20 is considered to be formed.
- the graphite layer 20 is formed in about 1 second in the initial stage of growth.
- the thickness of the carbon nanotube layer 18 (the length of the carbon nanotube) can be arbitrarily controlled by the growth time.
- the steps shown in FIGS. 8 (c) to 9 (a) are repeated as many times as necessary so that the carbon nanotube layer 18 and the graphite layer are formed.
- a stack of 20 and a predetermined number of layers are stacked.
- the catalytic metal film 38 can be deposited thereon. As a result, the carbon nanotube layer 18 and the graphite layer 20 can be repeatedly grown.
- the region between the carbon nanotube bundles 12, the space between the carbon nanotubes, and the filling layer 16 embedded in the graphite layer are formed (FIG. 9B).
- the carbon nanotube bundle 12, the carbon nanotube layer 18, the graphite layer 20, and the resin layer 16 are peeled from the substrate 30 to obtain the carbon nanotube sheet 10 (FIG. 9 (c)).
- a filling layer is formed by filling the filler and holding the carbon nanotube bundle.
- the shape change of the carbon nanotube bundle can be prevented.
- both ends of the carbon nanotube bundle can be exposed from the filling layer, the thermal conductivity and electrical conductivity with respect to the adherend can be improved.
- the carbon nanotube bundle is connected to the carbon nanotube bundle to form a laminate of the carbon nanotube layer and the graphite layer, so that the thermal conductivity and electric conductivity in the direction parallel to the surface of the sheet are formed. Can also be improved.
- FIG. 10 is a schematic cross-sectional view showing the structure of the semiconductor device according to the present embodiment
- FIGS. 11 to 13 are process cross-sectional views showing the method for manufacturing the semiconductor device according to the present embodiment.
- a wiring layer 42 is formed on the substrate 40.
- An interlayer insulating film 44 is formed in a region on the substrate 40 other than the region where the wiring layer 42 is formed.
- a via wiring 64 made of a bundle of carbon nanotubes is formed on one end of the wiring layer 42 via a TiN film 52.
- a wiring layer 66 made of graphite and connected to the via wiring 64 is formed on the via wiring 64.
- a TiO 2 film 56 is formed on the wiring layer 42 and the interlayer insulating film 44 in the formation region of the wiring layer 66 excluding the formation region of the via wiring 64.
- An interlayer insulating film 68 is formed around the via wiring 64 and the wiring layer 66.
- a via wiring 72 made of a bundle of carbon nanotubes is formed on one end of the wiring layer 66 via a TiN film 70.
- a wiring layer 74 made of graphite and connected to the via wiring 72 is formed on the via wiring 72.
- a TiO 2 film is formed on the interlayer insulating film 68 in the formation region of the wiring layer 74 excluding the formation region of the via wiring 72.
- An interlayer insulating film 76 is formed around the via wiring 72 and the wiring layer 74.
- the via wiring (for example, the via wiring 64) that connects the lower wiring layer (for example, the wiring layer 42) and the upper layer wiring (for example, the wiring layer 66) is constituted by the carbon nanotube bundle.
- a wiring layer (for example, the wiring layer 66) connected to a via wiring (for example, the via wiring 64) made of carbon nanotube bundles is formed of a graphite layer.
- the wiring resistance can be greatly reduced by forming the wiring layer and the via wiring with graphite and carbon nanotubes having a low resistance value. As a result, the semiconductor device can be operated at high speed and the power consumption can be reduced.
- the wiring layer 42 and the interlayer insulating film 44 are formed by a normal semiconductor device manufacturing process.
- the substrate 40 includes not only a semiconductor substrate itself such as a silicon substrate, but also a semiconductor substrate on which an element such as a transistor and one or more wiring layers are formed.
- An example of the material of the wiring layer 42 is copper. In this case, tantalum or the like for preventing copper diffusion is deposited on the bottom of the via.
- a photoresist film 48 that exposes a region where a via portion for connecting the upper wiring layer to the wiring layer 42 is exposed and covers the other region is formed by photolithography.
- a TiN film 50 having a thickness of about 1 to 20 nm, for example, 5 nm, and a Co film 52 having a thickness of about 2 to 3 nm, for example, 2.1 nm are sequentially deposited by sputtering, for example, from a Co / TiN laminated structure.
- a catalytic metal film is formed (FIG. 11B).
- the catalytic metal film may be formed by an electron beam evaporation method, a CVD method, an MBE method, or the like.
- the catalytic metal film may be formed on the entire surface and then patterned using photolithography and ion milling.
- Other patterning methods include EB (electron beam) exposure, but there is no particular limitation.
- a photoresist film 54 that is exposed and covers other regions is formed.
- a TiO 2 film 56 having a film thickness of about 1 to 20 nm, for example, 5 nm, and a Co film 58 having a film thickness of about 3 to 7 nm, for example, 4.5 nm are sequentially deposited by sputtering, for example, to form a Co / TiO 2 layer
- a catalytic metal film having a structure is formed (FIG. 12A).
- the TiO 2 film 56 different from the TiN film 50 used in the via part formation planned region is used as the base film of the catalyst metal film formed in the wiring layer formation planned region excluding the via part formation planned region. This is because the base film (TiN film 50, TiO 2 film 56) of the catalyst metal film remains even after the wiring layer is formed. That is, in the via portion formation planned region, it is necessary to use the conductive TiN film 50 in order to ensure electrical connection with the underlying wiring layer 42. This is because if the conductive film is formed of a TiN film or the like, there is a risk of short-circuiting with another wiring layer via the TiN film 50.
- an insulating base film such as a TiO 2 film in the wiring layer formation scheduled region excluding the via part formation scheduled region.
- a conductive base film may be formed in the same manner as the via portion formation scheduled region.
- the TiO 2 film 56 and the Co film 58 on the photoresist film 54 are lifted off together with the photoresist film 54, and the Co film 58 / TiO 2 film 56 is laminated in the wiring layer formation planned area excluding the via part formation planned area.
- the resulting catalytic metal film is selectively left (FIG. 12B).
- carbon nanotubes and graphite are grown by, for example, a thermal CVD method using the catalytic metal film as a catalyst.
- the growth conditions at this time are, for example, that the source gas is a mixed gas of acetylene and argon (partial pressure ratio 1: 9), the total gas pressure in the film forming chamber is 1 kPa, and the temperature is 450 ° C.
- a via wiring 64 made of a carbon nanotube bundle is formed, and in the wiring layer formation scheduled area in which the Co film 58 / TiO 2 film 56 is formed, A wiring layer 66 made of a graphite layer extending on the via wiring 64 is formed apart from the TiO 2 film 56 (FIG. 12C).
- Carbon nanotubes and graphite may be formed by a hot filament CVD method, a remote plasma CVD method, or the like.
- the Co films 52 and 58 are finely divided during the growth process of carbon nanotubes and graphite, and are taken into the carbon nanotubes or graphite.
- the structures formed on the catalytic metal film made of the Co film 52 / TiN film 54 and the catalytic metal film made of the Co film 58 / TiO 2 film 56 are different because of the growth rate due to the difference in the thickness of the Co film. This is because of the difference.
- the conditions for performing growth using a Co film having a film thickness of 2.1 nm or 4.5 nm as a catalyst at the film formation temperature are as follows. This is a condition for growing carbon nanotubes. However, the growth rate of carbon nanotubes in the region where the Co film with a thickness of 4.5 nm is formed is significantly slower than the growth rate of carbon nanotubes in the region where the Co film with a thickness of 2.1 nm is formed. After the wiring layer 66 made of a layer is formed, the growth of carbon nanotubes on the catalytic metal film made of the Co film 52 / TiN film 54 becomes dominant.
- Table 2 shows the length of the carbon nanotube formed when the Co film thickness and the growth conditions of the carbon nanotube are changed.
- the growth rate of the carbon nanotubes becomes smaller as the Co film thickness is larger at any growth temperature. Therefore, by appropriately setting the film thickness of the Co film deposited in the via wiring formation region and the wiring layer formation region, the via wiring made of the carbon nanotube bundle and the wiring layer made of the graphite layer can be formed simultaneously.
- an interlayer insulating film 68 covering the wiring layer 66 is formed on the substrate 40 on which the wiring layer 66 is formed by, for example, spin coating or CVD (FIG. 13A).
- the surface of the interlayer insulating film 68 is polished by, eg, CMP until the surface of the wiring layer 66 is exposed (FIG. 13B).
- FIGS. 11B to 13A are repeated as necessary, and via wirings 72 electrically connected to the wiring layer 66 via the TiN film 70 are formed above the wiring layer 66.
- a wiring layer 74, an interlayer insulating film 76, and the like are formed (FIG. 13C).
- a via wiring made of a carbon nanotube bundle and a wiring layer made of a graphite layer connected to the via wiring can be formed.
- the electrical resistance of the via wiring and the wiring layer can be greatly reduced, and the characteristics of the semiconductor device can be improved.
- the via wiring made of the carbon nanotube bundle and the wiring layer made of the graphite layer can be formed at the same time, the wiring structure can be formed without significantly changing the manufacturing process. Thereby, the increase in manufacturing cost can be prevented.
- FIG. 14 is a schematic sectional view showing the structure of the semiconductor device according to the present embodiment
- FIGS. 15 to 17 are process sectional views showing the method for manufacturing the semiconductor device according to the present embodiment.
- a wiring layer 42 is formed on the substrate 40.
- An interlayer insulating film 44 is formed on the substrate 40 on which the wiring layer 42 is formed.
- a contact hole 46 reaching the wiring layer 42 is formed in the interlayer insulating film 44.
- a via wiring 64 made of a bundle of carbon nanotubes is formed on the wiring layer 42 in the contact hole 46 via the TiN film 50.
- a wiring layer 84 connected to the via wiring 64 is formed on the via wiring 64.
- the wiring layer 84 includes a graphite layer 66a formed on the via wiring 64, a graphite layer 66b formed on the interlayer insulating film via the TiN film 66, and a TiC film 82 formed on the graphite layers 66a and 66b. And have.
- the via wiring (for example, the via wiring 64) that connects the lower wiring layer (for example, the wiring layer 42) and the upper layer wiring (for example, the wiring layer 84) is constituted by the carbon nanotube bundle.
- a wiring layer (for example, the wiring layer 84) connected to a via wiring (for example, the via wiring 64) made of a carbon nanotube bundle is composed of graphite layers 66a and 66b and a TiC film 82.
- the wiring resistance can be greatly reduced by forming the wiring layer and the via wiring with graphite and carbon nanotubes having a low resistance value. As a result, the semiconductor device can be operated at high speed and the power consumption can be reduced.
- the TiC film 82 formed on the graphite layers 66a and 66b is for ensuring electrical connection between the graphite layers 66a and 66b.
- the graphite layer 66a and the graphite layer 66b are grown separately from different bases, and although formed in adjacent regions, it is conceivable that sufficient electrical connection cannot be ensured.
- the TiC film 82 is formed in consideration of such a case, and is not necessarily formed if the electrical connection between the graphite layer 66a and the graphite layer 66b is sufficient.
- the substrate 40 includes not only a semiconductor substrate itself such as a silicon substrate, but also a semiconductor substrate on which an element such as a transistor and one or more wiring layers are formed.
- a contact hole 46 reaching the wiring layer 42 is formed in the interlayer insulating film 44 by photolithography and dry etching (FIG. 15B).
- a photoresist film 48 that exposes the formation region of the contact hole 46 and covers the other region is formed on the interlayer insulating film 44 by photolithography.
- the photoresist film 48 may be the photoresist film used for forming the contact hole 46.
- a TiN film 50 having a thickness of about 1 to 20 nm, for example, 5 nm, and a Co film 52 having a thickness of about 2 to 3 nm, for example, 2.6 nm are sequentially deposited by sputtering, for example, from a Co / TiN laminated structure.
- a catalytic metal film is formed (FIG. 11C).
- the catalytic metal film may be formed by an electron beam evaporation method, a CVD method, an MBE method, or the like.
- a photoresist film 54 is formed which exposes a region where the upper wiring layer connected to the wiring layer 42 is to be formed, except the region where the contact hole 46 is formed, and covers the other regions.
- a TiN film 60 having a film thickness of about 1 to 20 nm, for example, 5 nm, and a Co film 62 having a film thickness of about 3 to 7 nm, for example, 4.5 nm are sequentially deposited by sputtering, for example, from a Co / TiN laminated structure.
- a catalytic metal film is formed (FIG. 16B).
- the TiN film 60 and the Co film 62 on the photoresist film 54 are lifted off together with the photoresist film 54, and a wiring layer formation scheduled area excluding the contact hole 46 formation area is formed from the Co film 62 / TiN film 60 laminated structure.
- the resulting catalyst metal film is selectively left (FIG. 16C).
- carbon nanotubes and graphite are grown by using, for example, a thermal CVD method using the catalytic metal film as a catalyst.
- the growth conditions at this time are, for example, that the source gas is a mixed gas of acetylene and argon (partial pressure ratio 1: 9), the total gas pressure in the film forming chamber is 1 kPa, and the temperature is 450 ° C.
- a via wiring 64 made of a bundle of carbon nanotubes whose upper surface is covered with a graphite layer 66a is formed in the region where the catalytic metal film of the film 54 is formed, and a Co film 62 / TiN film 60 is formed.
- a graphite layer 66b is formed in the wiring layer formation scheduled region (FIG. 17A).
- Carbon nanotubes and graphite may be formed by a hot filament CVD method, a remote plasma CVD method, or the like.
- the Co films 52 and 62 are finely divided during the growth process of carbon nanotubes and graphite and are taken into the carbon nanotubes or graphite.
- the structures formed on the catalytic metal film made of the Co film 52 / TiN film 54 and the catalytic metal film made of the Co film 62 / TiN film 60 are different because of the growth rate due to the difference in the thickness of the Co film. This is because the difference has an effect.
- the conditions for performing growth using a Co film having a film thickness of 2.6 nm or 4.5 nm as a catalyst at the above film formation temperature are such that the upper surface is covered with a graphite layer in any case.
- This is a condition for growing carbon nanotubes.
- the growth rate of carbon nanotubes in the region where the Co film having a thickness of 4.5 nm is formed is significantly slower than the growth rate of carbon nanotubes in the region where the Co film having a thickness of 2.6 nm is formed.
- the via wiring 64 made of the carbon nanotube bundle is formed under the layer 66a, the carbon nanotube bundle is hardly grown under the graphite layer 66b.
- via wiring 64 and graphite layers 66a and 66b as shown in FIG. 17A are formed.
- a photoresist film 78 is formed by photolithography to expose the wiring layer formation scheduled region (the formation region of the graphite layers 66a and 66b) and cover the other regions.
- a Ti film 80 of, eg, a 50 nm-thickness is deposited by, eg, sputtering (FIG. 17B).
- the Ti film 80 on the photoresist film 78 is lifted off together with the photoresist film 78, and the Ti film 80 is selectively left on the graphite layers 66a and 66b in the region where the wiring layer is to be formed.
- heat treatment is performed at 450 ° C. for 10 minutes to react the Ti film 80 with the upper portions of the graphite layers 66a and 66b, thereby forming a TiC (titanium carbide) film 82 on the surfaces of the graphite layers 66a and 66b.
- TiC titanium carbide
- the wiring layer 84 composed of the graphite layers 66a and 66b and the TiC film 82 is formed (FIG. 17C).
- a via wiring made of a carbon nanotube bundle and a wiring layer made of a graphite layer connected to the via wiring can be formed.
- the electrical resistance of the via wiring and the wiring layer can be greatly reduced, and the characteristics of the semiconductor device can be improved.
- the via wiring made of the carbon nanotube bundle and the wiring layer made of the graphite layer can be formed at the same time, the wiring structure can be formed without significantly changing the manufacturing process. Thereby, the increase in manufacturing cost can be prevented.
- FIG. 18 is a schematic cross-sectional view showing the structure of the electronic apparatus according to the present embodiment.
- a semiconductor element 106 such as a CPU is mounted on a circuit board 100 such as a multilayer wiring board.
- the semiconductor element 106 is electrically connected to the circuit board 100 via the solder bumps 102, and an underfill 104 is filled between the circuit board 100 and the semiconductor element 106.
- a heat spreader 110 for diffusing heat from the semiconductor element 106 is formed on the semiconductor element 106 so as to cover the semiconductor element 106.
- a carbon nanotube sheet 108 according to the first or second embodiment is formed between the semiconductor element 106 and the heat spreader 110.
- the carbon nanotube sheet 108 is disposed so that the graphite layer 14 or the carbon nanotube layer 18 is located on the semiconductor element 106 side which is a heat generation source (see FIGS. 1 and 6).
- a heat sink 114 for radiating heat transmitted to the heat spreader 110 is formed on the heat spreader 110.
- a carbon nanotube sheet 112 of the present invention is formed between the heat spreader 110 and the heat sink 114.
- Carbon nanotube sheets 108 and 112 are provided, respectively.
- the carbon nanotube bundles 12 are oriented perpendicular to the film surface of the sheet, and in the meantime, the carbon nanotube sheet has a layered structure parallel to the film surface of the sheet.
- a graphite layer 14 made of graphite is formed, and the thermal conductivity in the perpendicular direction and the horizontal direction is extremely high.
- the carbon nanotube sheet of the present invention as a heat conductive sheet formed between the semiconductor element 106 and the heat spreader 110 and between the heat spreader 110 and the heat sink 114, heat generated from the semiconductor element 106 can be efficiently obtained.
- the heat spreader 110 and the heat sink 114 can be transmitted in the vertical direction while spreading in the horizontal direction, and the heat dissipation efficiency can be improved. Thereby, the reliability of an electronic device can be improved.
- the carbon nanotube bundle is oriented with respect to the film surface of the sheet between the semiconductor element and the heat spreader and between the heat spreader and the heat sink, and between the carbon nanotube bundles, the sheet Since the carbon nanotube sheet of the first or second embodiment in which the graphite layer made of graphite having a layered structure parallel to the film surface is formed is disposed, the thermal conductivity between them can be greatly improved. . Thereby, the thermal radiation efficiency of the heat
- FIG. 19 is a schematic cross-sectional view showing the structure of the electronic apparatus according to the present embodiment.
- a high power amplifier (HPA) 120 used in a radio communication base station or the like is incorporated in a package 122 and joined to a heat sink 124 on the back surface of the package 122. Heat generated from the high-power amplifier 120 is radiated to the heat sink 124 through the back surface of the package 122.
- the package 122 is also used as an electrical ground (ground plane), and needs to be electrically connected to the heat sink 124. For this reason, it is necessary to use a good conductor for electricity and heat for joining the package 122 and the heat sink 124.
- the package 122 and the heat sink 124 are electrically connected by using the carbon nanotube sheet 126 according to the first or second embodiment at the joint between the package 122 and the heat sink 124. Can do.
- heat generated from the high-power amplifier 120 can be efficiently transmitted to the heat sink 124, and heat dissipation efficiency can be improved. Thereby, the reliability of an electronic device can be improved.
- the carbon nanotube bundle is oriented with respect to the film surface of the sheet between the package of the high-power amplifier and the heat sink, and the film surface of the sheet is interposed between the carbon nanotube bundles. Since the carbon nanotube sheet of the first or second embodiment in which the graphite layer made of graphite having a parallel layered structure is formed, the thermal conductivity between them can be greatly improved. Thereby, the thermal radiation efficiency of the heat
- the present invention is widely applied to a sheet-like structure and a semiconductor device using a linear structure made of a carbon element.
- the linear structure made of carbon elements include carbon nanowires, carbon rods, and carbon fibers in addition to carbon nanotubes. These linear structures are the same as the carbon nanotubes except that their sizes are different.
- the present invention can also be applied to a sheet-like structure or a semiconductor device using these linear structures.
- the carbon nanotube sheet of the present invention includes, for example, a CPU heat dissipation sheet, a radio communication base station high output amplifier, a radio communication terminal high output amplifier, an electric vehicle high output switch, a server, a personal computer, etc. Application to is possible. Moreover, it is applicable to a vertical wiring sheet and various applications using the high allowable current density characteristic of carbon nanotubes.
- the catalytic metal film having the base film although the layered structure of the Co film / TiN film and Co film / TiO 2 film, the catalytic metal film is not limited thereto.
- a hydrocarbon-based source gas in the case of using Co, Ni, and Fe as the catalyst species, Ti, TiN, TiO x , TiSi, Ta, Tan, Zr, Hf, and V are used as the base film. , Nb, W, etc. can be applied.
- Fe is used as the catalyst species
- Al, Al 2 O 3 can also be used as the base film.
- Mo or the like can be applied as a base film in the case of using Co as a catalyst species.
- the structures of the semiconductor devices shown in the third and fourth embodiments and the electronic devices shown in the fifth and sixth embodiments and the manufacturing methods thereof are typical examples. Correction is possible.
- the sheet-like structure according to the present invention is excellent not only in thermal conductivity and electrical conductivity in a direction perpendicular to the sheet surface, but also in thermal conductivity and electrical conductivity in a direction parallel to the sheet surface. Yes. Therefore, the sheet-like structure of the present invention can be expected to be applied to electronic devices as a high-performance heat conductive sheet or conductive sheet.
- the semiconductor device according to the present invention includes a via wiring having a low resistance value and a wiring connected to the via wiring, and can be expected to be applied to a high-performance semiconductor device.
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Abstract
Description
12…カーボンナノチューブ束
14,20…グラファイト層
16…充填層
18…カーボンナノチューブ層
30,40…基板
32,32a、32b,38…触媒金属膜
34,48,54,78…フォトレジスト膜
36…開口部
42,66,74,84…配線層
44,68,76…層間絶縁膜
46…コンタクトホール
50,60,70…TiN膜
52,58,62…Co膜
56…TiO2膜
64,72…ビア配線
66a,66b…グラファイト層
80…Ti膜
82…TiC膜
100…回路基板
102…はんだバンプ
104…アンダーフィル
106…半導体素子
108,112,126…カーボンナノチューブシート
110…ヒートスプレッダ
114,124…ヒートシンク
120…高出力増幅器
122…パッケージ
本発明の第1実施形態によるカーボンナノチューブシート及びその製造方法について図1乃至図5を用いて説明する。
本発明の第2実施形態によるカーボンナノチューブシート及びその製造方法について図6乃至図9を用いて説明する。図1乃至図5に示す第1実施形態によるカーボンナノチューブシート及びその製造方法と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
本発明の第3実施形態による半導体装置及びその製造方法について図10乃至図13を用いて説明する。
本発明の第4実施形態による半導体装置及びその製造方法について図14乃至図17を用いて説明する。
本発明の第5実施形態による電子機器について図18を用いて説明する。
本発明の第6実施形態による電子機器について図19を用いて説明する。
本発明は上記実施形態に限らず種々の変形が可能である。
Claims (20)
- 互いに第1の間隙をもって配置された複数の炭素元素からなる線状構造体を含み、互いに前記第1の間隙よりも大きな第2の間隙をもって配置された複数の線状構造体束と、
複数の前記線状構造体束間の領域に形成され、複数の前記線状構造体束に接続されたグラファイト層と、
前記第1の間隙及び前記第2の間隙に充填され、前記複数の線状構造体束及び前記グラファイト層を保持する充填層と
を有することを特徴とするシート状構造体。 - 請求の範囲第1項に記載のシート状構造体において、
複数の前記線状構造体束間の前記領域に形成され、炭素元素からなる複数の線状構造体を含み、複数の前記線状構造体の一端側が前記グラファイト層に接続された線状構造体層を更に有する
ことを特徴とするシート状構造体。 - 請求の範囲第2項に記載のシート状構造体において、
複数の前記線状構造体層と複数の前記グラファイト層とを有し、
前記線状構造体層と前記グラファイト層とが交互に積層されている
ことを特徴とするシート状構造体。 - 請求の範囲第1項乃至第3項のいずれか1項に記載のシート状構造体において、
前記複数の線状構造体束を構成する前記複数の線状構造体のそれぞれは、前記充填層の膜厚方向に配向している
ことを特徴とするシート状構造体。 - 請求の範囲第1項乃至第4項のいずれか1項に記載のシート状構造体において、
前記グラファイト層は、前記充填層の面方向に平行な層状構造を有する
ことを特徴とするシート状構造体。 - 請求の範囲第1項乃至第5項のいずれか1項に記載のシート状構造体において、
前記複数の線状構造体束の両端部が表面に露出している
ことを特徴とするシート状構造体。 - 請求の範囲第1項乃至第6項のいずれか1項に記載のシート状構造体において、
前記グラファイト層の一方の面が表面に露出している
ことを特徴とするシート状構造体。 - 半導体基板上に形成された第1の配線層と、
炭素元素からなる複数の線状構造体を含む線状構造体束よりなり、前記第1の配線層に接続されたビア配線と、
前記ビア配線の形成領域を除く前記半導体基板上に、前記第1の配線層を覆うように形成された絶縁膜と、
前記ビア配線上及び前記絶縁膜上に形成されたグラファイト層を有する第2の配線層と
を有することを特徴とする半導体装置。 - 基板の第1の領域上に、第1の触媒金属膜を形成する工程と、
前記基板の前記第1の領域に隣接する第2の領域上に、前記第1の触媒金属膜とは異なる第2の触媒金属膜を形成する工程と、
前記第1の領域上に、前記第1の触媒金属膜を触媒として、炭素元素からなる複数の線状構造体を有する第1の炭素構造体を選択的に形成する工程と、
前記第2の領域上に、前記第2の触媒金属膜を触媒として、グラファイト層を有する第2の炭素構造体を選択的に形成する工程と
を有することを特徴とする炭素構造体の成長方法。 - 請求の範囲第9項に記載の炭素構造体の成長方法において、
前記第1の炭素構造体を形成する工程と前記第2の炭素構造体を形成する工程とを同時に行う
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第10項又は第11項に記載の炭素構造体の成長方法において、
前記第1の触媒金属膜を形成する工程では、膜厚が0.3~10nmのFe膜を有する前記第1の触媒金属膜を形成し、
前記第2の触媒金属膜を形成する工程では、膜厚が10nm~200nmのFe膜を有する前記第2の触媒金属膜を形成する
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第9項に記載の炭素構造体の成長方法において、
前記第2の触媒金属膜を形成する工程は、前記第1の炭素構造体を形成する工程の後、前記第2の炭素構造体を形成する工程の前に行う
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第12項に記載の炭素構造体の成長方法において、
前記第2の炭素構造体を形成する工程では、炭素元素からなる複数の線状構造体層の上面に前記グラファイト層が形成された前記第2の炭素構造体を形成する
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第13項に記載の炭素構造体の成長方法において、
前記第2の触媒金属膜を形成する工程の後、前記第2の触媒金属膜を形成する工程と前記第2の炭素構造体を形成する工程とを更に繰り返し行い、前記第2の領域に、前記第2の炭素構造体の積層体を形成する
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第12項乃至第14項のいずれか1項に記載の炭素構造体の成長方法において、
前記第1の触媒金属膜を形成する工程では、膜厚が0.3nm~10nmのFe膜を有する前記第1の触媒金属膜を形成し、
前記第2の触媒金属膜を形成する工程では、膜厚が2.0nm~7.0nmのCo膜を有する前記第2の触媒金属膜を形成する
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第12項乃至第15項のいずれか1項に記載の炭素構造体の成長方法において、
前記第2の炭素構造体を形成する工程では、450~510℃の温度で前記第2の炭素構造体を形成する
ことを特徴とする炭素構造体の成長方法。 - 請求の範囲第9項乃至第16項のいずれか1項に記載の炭素構造体の成長方法により、前記基板上に、前記第1の炭素構造体及び前記第2の炭素構造体を形成する工程と、
前記第1の炭素構造体内及び前記第2の炭素構造体内に充填材を充填し、前記充填材よりなる充填層を形成する工程と、
前記基板を除去する工程と
を有することを特徴とするシート状構造体の製造方法。 - 請求の範囲第9項乃至第11項のいずれか1項に記載の炭素構造体の成長方法により、前記基板の前記第1の領域上に、前記第1の触媒金属膜を触媒として、炭素元素からなる複数の線状構造体と、前記線状構造体上に形成された第1のグラファイト層とを有する第1の炭素構造体を形成し、同時に、前記基板の前記第2の領域上に、前記第2の触媒金属膜を触媒として、第2のグラファイト層を有する第2の炭素構造体を形成する工程を有し、
前記複数の線状構造体からなるビア配線と、前記第1のグラファイト層及び前記第2のグラファイト層を有する配線層とを形成する
ことを特徴とする半導体装置の製造方法。 - 請求の範囲第18項に記載の半導体装置の製造方法において、
前記第1の炭素構造体及び前記第2の炭素構造体を形成する工程では、前記第1の触媒金属膜上における炭素元素からなる線状構造体の成長速度と、前記第2の触媒金属膜上における炭素元素からなる線状構造体の成長速度との違いを利用して、前記第1の炭素構造体と前記第2の炭素構造体とを作り分ける
ことを特徴とする半導体装置の製造方法。 - 請求の範囲第18項又は第19項に記載の半導体装置の製造方法において、
前記第1の触媒金属膜を形成する工程では、膜厚が2.0nm~7.0nmの第1のCo膜を有する前記第1の触媒金属膜を形成し、
前記第2の触媒金属膜を形成する工程では、膜厚が2.0nm~7.0nmであり且つ前記第1のCo膜よりも厚い第2のCo膜を有する前記第2の触媒金属膜を形成する
ことを特徴とする半導体装置の製造方法。
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JPWO2009107229A1 (ja) | 2011-06-30 |
US8258060B2 (en) | 2012-09-04 |
US20100327444A1 (en) | 2010-12-30 |
EP2269948A1 (en) | 2011-01-05 |
JP5506657B2 (ja) | 2014-05-28 |
EP2269948A4 (en) | 2015-08-05 |
CN101959788B (zh) | 2017-03-08 |
US8350391B2 (en) | 2013-01-08 |
US20120295078A1 (en) | 2012-11-22 |
CN101959788A (zh) | 2011-01-26 |
EP2269948B1 (en) | 2017-08-02 |
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