WO2009044890A1 - 酸化インジウム系ターゲット - Google Patents

酸化インジウム系ターゲット Download PDF

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Publication number
WO2009044890A1
WO2009044890A1 PCT/JP2008/068099 JP2008068099W WO2009044890A1 WO 2009044890 A1 WO2009044890 A1 WO 2009044890A1 JP 2008068099 W JP2008068099 W JP 2008068099W WO 2009044890 A1 WO2009044890 A1 WO 2009044890A1
Authority
WO
WIPO (PCT)
Prior art keywords
indium oxide
oxide target
indium
tin
magnesium
Prior art date
Application number
PCT/JP2008/068099
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to KR1020107009350A priority Critical patent/KR101200386B1/ko
Priority to JP2008550292A priority patent/JP5237827B2/ja
Publication of WO2009044890A1 publication Critical patent/WO2009044890A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)
PCT/JP2008/068099 2007-10-03 2008-10-03 酸化インジウム系ターゲット WO2009044890A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020107009350A KR101200386B1 (ko) 2007-10-03 2008-10-03 산화인듐계 타깃
JP2008550292A JP5237827B2 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-260436 2007-10-03
JP2007260436 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044890A1 true WO2009044890A1 (ja) 2009-04-09

Family

ID=40526308

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/JP2008/068100 WO2009044891A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068099 WO2009044890A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068102 WO2009044893A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068101 WO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068098 WO2009044889A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068097 WO2009044888A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068100 WO2009044891A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
PCT/JP2008/068102 WO2009044893A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068101 WO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068098 WO2009044889A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068097 WO2009044888A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Country Status (4)

Country Link
JP (6) JPWO2009044893A1 (zh)
KR (6) KR20100063135A (zh)
TW (6) TWI461365B (zh)
WO (6) WO2009044891A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012029408A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP2013199682A (ja) * 2012-03-26 2013-10-03 Ryukoku Univ 酸化物膜及びその製造方法

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JP2011037679A (ja) * 2009-08-13 2011-02-24 Tosoh Corp 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法
KR20170005149A (ko) * 2009-11-19 2017-01-11 가부시키가이샤 아루박 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟
CN102191465A (zh) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 一种铟掺杂氧化锌靶材及透明导电膜的制备方法
KR101198786B1 (ko) 2010-06-30 2012-11-07 현대자동차주식회사 가변 압축비 장치
JP5367659B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP5817327B2 (ja) 2010-09-29 2015-11-18 東ソー株式会社 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池
KR102027018B1 (ko) * 2011-12-07 2019-09-30 토소가부시키가이샤 복합 산화물 소결체, 스퍼터링 타겟 및 산화물 투명 도전막 그리고 그 제조 방법
US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys

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JP2001098359A (ja) * 1999-09-24 2001-04-10 Tosoh Corp Ｍｇ含有ＩＴＯスパッタリングターゲットおよびＭｇ含有ＩＴＯ蒸着材の製造方法
JP2001151572A (ja) * 1998-10-13 2001-06-05 Geomatec Co Ltd 金属酸化物焼結体およびその用途
JP2002284570A (ja) * 2001-03-23 2002-10-03 Tosoh Corp 酸化物焼結体およびスパッタリングターゲット
JP2003055759A (ja) * 2001-08-10 2003-02-26 Tosoh Corp Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法
JP2003160861A (ja) * 2001-11-27 2003-06-06 Tosoh Corp Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法
JP2005194594A (ja) * 2004-01-08 2005-07-21 Tosoh Corp スパッタリングターゲットおよびその製造方法

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JPH07161235A (ja) * 1993-12-13 1995-06-23 Matsushita Electric Ind Co Ltd 透明導電膜およびその製造方法
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JP3943617B2 (ja) * 1995-12-07 2007-07-11 出光興産株式会社 透明導電積層体およびこれを用いたタッチパネル
JPH09175837A (ja) * 1995-12-27 1997-07-08 Idemitsu Kosan Co Ltd 透明導電膜およびその製造方法
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JP3806521B2 (ja) * 1998-08-27 2006-08-09 旭硝子セラミックス株式会社 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体
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JP2006134789A (ja) * 2004-11-09 2006-05-25 Idemitsu Kosan Co Ltd 非晶質透明導電膜及び非晶質透明導電膜積層体並びにこれらの製造方法
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Publication number Priority date Publication date Assignee Title
JP2001151572A (ja) * 1998-10-13 2001-06-05 Geomatec Co Ltd 金属酸化物焼結体およびその用途
JP2001098359A (ja) * 1999-09-24 2001-04-10 Tosoh Corp Ｍｇ含有ＩＴＯスパッタリングターゲットおよびＭｇ含有ＩＴＯ蒸着材の製造方法
JP2002284570A (ja) * 2001-03-23 2002-10-03 Tosoh Corp 酸化物焼結体およびスパッタリングターゲット
JP2003055759A (ja) * 2001-08-10 2003-02-26 Tosoh Corp Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法
JP2003160861A (ja) * 2001-11-27 2003-06-06 Tosoh Corp Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法
JP2005194594A (ja) * 2004-01-08 2005-07-21 Tosoh Corp スパッタリングターゲットおよびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012029408A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
KR101467131B1 (ko) * 2010-08-31 2014-11-28 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화물 소결체 및 산화물 반도체 박막
JP2013199682A (ja) * 2012-03-26 2013-10-03 Ryukoku Univ 酸化物膜及びその製造方法

Also Published As

Publication number Publication date
JPWO2009044891A1 (ja) 2011-02-10
TW200926208A (en) 2009-06-16
WO2009044889A1 (ja) 2009-04-09
TW200927658A (en) 2009-07-01
WO2009044893A1 (ja) 2009-04-09
TW200923115A (en) 2009-06-01
JP5464319B2 (ja) 2014-04-09
WO2009044888A1 (ja) 2009-04-09
KR20100071089A (ko) 2010-06-28
TW200927657A (en) 2009-07-01
JPWO2009044888A1 (ja) 2011-02-10
JPWO2009044892A1 (ja) 2011-02-10
KR20100063135A (ko) 2010-06-10
TW200926207A (en) 2009-06-16
JPWO2009044890A1 (ja) 2011-02-10
KR20100063137A (ko) 2010-06-10
TWI461365B (zh) 2014-11-21
TW200926209A (en) 2009-06-16
JPWO2009044893A1 (ja) 2011-02-10
WO2009044892A1 (ja) 2009-04-09
KR20100071090A (ko) 2010-06-28
KR101200386B1 (ko) 2012-11-12
KR20100067118A (ko) 2010-06-18
TWI430956B (zh) 2014-03-21
KR20100063136A (ko) 2010-06-10
JPWO2009044889A1 (ja) 2011-02-10
JP5237827B2 (ja) 2013-07-17
WO2009044891A1 (ja) 2009-04-09

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