JP2013199682A - 酸化物膜及びその製造方法 - Google Patents
酸化物膜及びその製造方法 Download PDFInfo
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Abstract
【解決手段】
本発明の1つの酸化物膜は、銀(Ag)及びニッケル(Ni)からなる酸化物の膜(不可避不純物を含み得る)である。この酸化物膜は、図3の第1酸化物膜及び第2酸化物膜のXRD(X線回折)分析結果を示すチャートに示すように、XRD分析では明確な回折ピークを示さない、微結晶の集合体、微結晶を含むアモルファス状、又はアモルファス状であるとともに、p型の導電性を有している。この酸化物膜によれば、従来と比して広い禁制帯幅を有しながら、p型の高い導電性が得られる。また、この酸化物膜は上述のとおり微結晶の集合体、微結晶を含むアモルファス状、又はアモルファス状であるため、大型基板上への膜の形成が容易になることから、工業生産にも適している。
【選択図】図3
Description
本実施形態では、銀(Ag)及びニッケル(Ni)からなる酸化物膜及びその製造方法について説明する。図1は、本実施形態における第1酸化物膜の製造装置の説明図である。図2A及び図2Bは、本実施形態における第2酸化物膜の形成過程の1つを示す説明図である。
第1実施形態におけるパルスレーザー蒸着装置20の条件のうち、ステージ27の温度が20℃乃至25℃(所謂、室温)である点を除いて、第1実施形態と同じ条件で第1酸化物膜11及び第2酸化物膜12が形成された。従って、第1実施形態と重複する説明は省略され得る。
第1実施形態におけるパルスレーザー蒸着装置20の条件のうち、酸化物焼結体であるターゲット30の構成原子におけるニッケル(Ni)に対する前述の銀(Ag)の原子数比が、ニッケル(Ni)の原子数を1とした場合に銀(Ag)の原子数が0.02である点を除いて、第1実施形態と同じ条件で第1酸化物膜11が形成された。従って、第1実施形態と重複する説明は省略され得る。
第1実施形態におけるパルスレーザー蒸着装置20の条件のうち、酸化物焼結体であるターゲット30の構成原子におけるニッケル(Ni)に対する前述の銀(Ag)の原子数比が、ニッケル(Ni)の原子数を1とした場合に銀(Ag)の原子数が0.11である点を除いて、第1実施形態と同じ条件で第1酸化物膜11が形成された。従って、第1実施形態と重複する説明は省略され得る。
<その他の実施形態>
11 第1酸化物膜
12 第2酸化物膜
20 パルスレーザー蒸着装置
21 チャンバー
22 エキシマレーザー
23 レンズ
24 ホルダー
25a 酸素ガスボンベ
25b 窒素ガスボンベ
26 導入口
27 ステージ
28 排気口
29 真空ポンプ
30 ターゲット
Claims (10)
- 銀(Ag)及びニッケル(Ni)からなる酸化物の膜(不可避不純物を含み得る)であって、微結晶の集合体、微結晶を含むアモルファス状、又はアモルファス状であるとともに、p型の導電性を有する、
酸化物膜。 - 前記ニッケル(Ni)に対する前記銀(Ag)の原子数比が、前記ニッケル(Ni)の原子数を1とした場合に前記銀(Ag)の原子数が0.01以上0.1以下である、
請求項1に記載の酸化物膜。 - 前記酸化物膜が、微結晶の集合体又は微結晶を含むアモルファス状であって、1S/cm以上の導電率を有する、
請求項1又は請求項2に記載の酸化物膜。 - 400nm以上750nm以下の波長の光線の透過率が、50%以上である、
請求項1又は請求項2に記載の酸化物膜。 - 前記酸化物膜の禁制帯幅が、3.0eV以上4.0eV以下である、
請求項3又は請求項4に記載の酸化物膜。 - 銀(Ag)及びニッケル(Ni)からなる酸化物のターゲットの構成原子を飛散させることにより、基板上に微結晶の集合体、微結晶を含むアモルファス状、又はアモルファス状であってp型の導電性を有する第1酸化物膜(不可避不純物を含み得る)を形成する工程を含む、
酸化物膜の製造方法。 - 前記ニッケル(Ni)に対する前記銀(Ag)の原子数比が、前記ニッケル(Ni)の原子数を1とした場合に前記銀(Ag)の原子数が0.01以上0.1以下である、
請求項6に記載の酸化物膜の製造方法。 - 第1酸化物膜を形成するときの前記基板の温度が0℃以上500℃以下であり、かつ、第1酸化物膜を形成するときのガスの圧力が0.01Pa以上100Pa以下である、
請求項6又は請求項7に記載の酸化物膜の製造方法。 - 前記第1酸化物膜を、大気中において100℃以上250℃以下で加熱することにより第2酸化物膜を形成する工程をさらに含む、
請求項6乃至請求項8のいずれか1項に記載の酸化物膜の製造方法。 - 前記ターゲットの構成原子を、スパッタ法又はパルスレーザーの照射により飛散させることによって前記第1酸化物膜を形成する、
請求項6に記載の酸化物膜の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2012068695A JP5996227B2 (ja) | 2012-03-26 | 2012-03-26 | 酸化物膜及びその製造方法 |
KR1020147029160A KR20140138307A (ko) | 2012-03-26 | 2013-03-01 | 산화물막 및 그 제조 방법 |
CN201380015666.8A CN104204279A (zh) | 2012-03-26 | 2013-03-01 | 氧化物膜及其制造方法 |
US14/387,219 US20150048281A1 (en) | 2012-03-26 | 2013-03-01 | Oxide film and process for producing same |
PCT/JP2013/055646 WO2013146095A1 (ja) | 2012-03-26 | 2013-03-01 | 酸化物膜及びその製造方法 |
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JP2012068695A JP5996227B2 (ja) | 2012-03-26 | 2012-03-26 | 酸化物膜及びその製造方法 |
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JP2013199682A true JP2013199682A (ja) | 2013-10-03 |
JP5996227B2 JP5996227B2 (ja) | 2016-09-21 |
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US (1) | US20150048281A1 (ja) |
JP (1) | JP5996227B2 (ja) |
KR (1) | KR20140138307A (ja) |
CN (1) | CN104204279A (ja) |
WO (1) | WO2013146095A1 (ja) |
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ES2929948B2 (es) * | 2021-06-02 | 2023-04-18 | Univ Valencia | Material fotocatalizador y recubrimiento obtenido a partir del mismo |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03188263A (ja) * | 1989-09-12 | 1991-08-16 | Sekisui Chem Co Ltd | 金属酸化物被覆プラスチック |
JP2005525463A (ja) * | 2002-02-06 | 2005-08-25 | サン−ゴバン グラス フランス | 非化学量論的NiOxセラミックターゲット |
WO2009044890A1 (ja) * | 2007-10-03 | 2009-04-09 | Mitsui Mining & Smelting Co., Ltd. | 酸化インジウム系ターゲット |
WO2011092993A1 (ja) * | 2010-02-01 | 2011-08-04 | 学校法人 龍谷大学 | 酸化物膜及びその製造方法、並びにターゲット及び酸化物焼結体の製造方法 |
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US20070178670A1 (en) * | 2006-01-19 | 2007-08-02 | Metamateria Partners Llc | Methods for preparing crystalline films |
JP2009123957A (ja) * | 2007-11-15 | 2009-06-04 | Sumitomo Chemical Co Ltd | 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ |
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2012
- 2012-03-26 JP JP2012068695A patent/JP5996227B2/ja not_active Expired - Fee Related
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2013
- 2013-03-01 CN CN201380015666.8A patent/CN104204279A/zh active Pending
- 2013-03-01 US US14/387,219 patent/US20150048281A1/en not_active Abandoned
- 2013-03-01 KR KR1020147029160A patent/KR20140138307A/ko not_active Application Discontinuation
- 2013-03-01 WO PCT/JP2013/055646 patent/WO2013146095A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03188263A (ja) * | 1989-09-12 | 1991-08-16 | Sekisui Chem Co Ltd | 金属酸化物被覆プラスチック |
JP2005525463A (ja) * | 2002-02-06 | 2005-08-25 | サン−ゴバン グラス フランス | 非化学量論的NiOxセラミックターゲット |
WO2009044890A1 (ja) * | 2007-10-03 | 2009-04-09 | Mitsui Mining & Smelting Co., Ltd. | 酸化インジウム系ターゲット |
WO2011092993A1 (ja) * | 2010-02-01 | 2011-08-04 | 学校法人 龍谷大学 | 酸化物膜及びその製造方法、並びにターゲット及び酸化物焼結体の製造方法 |
Non-Patent Citations (2)
Title |
---|
JPN6013018726; S.C. CHEN et al.: 'Electrical and Optical Properties of NiO Composite Films by Radio Frequency Magnetron Sputtering' Journal of Nanoscience and Nanotechnology Vol.12 No.2, 201202, P.1196-1200 * |
JPN6013018727; P.Y. YANG et al.: 'Exchange bias and training effect in Ni/Ag-doped NiO bilayers' Journal of Magnetism and Magnetic Materials Vol.322 No.5, 201003, P.542-547 * |
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Publication number | Publication date |
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WO2013146095A1 (ja) | 2013-10-03 |
JP5996227B2 (ja) | 2016-09-21 |
KR20140138307A (ko) | 2014-12-03 |
CN104204279A (zh) | 2014-12-10 |
US20150048281A1 (en) | 2015-02-19 |
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