WO2008102646A1 - Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ - Google Patents

Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ Download PDF

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Publication number
WO2008102646A1
WO2008102646A1 PCT/JP2008/052023 JP2008052023W WO2008102646A1 WO 2008102646 A1 WO2008102646 A1 WO 2008102646A1 JP 2008052023 W JP2008052023 W JP 2008052023W WO 2008102646 A1 WO2008102646 A1 WO 2008102646A1
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WIPO (PCT)
Prior art keywords
light emitting
group iii
iii nitride
emitting device
semiconductor light
Prior art date
Application number
PCT/JP2008/052023
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English (en)
French (fr)
Inventor
Yasumasa Sasaki
Hisayuki Miki
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to US12/439,937 priority Critical patent/US8198179B2/en
Publication of WO2008102646A1 publication Critical patent/WO2008102646A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　基板上に、ＩＩＩ族窒化物を含有する中間層をスパッタ法により形成する中間層形成工程と、前記中間層上に、下地層を有するｎ型半導体層、発光層、及びｐ型半導体層を順次積層する積層半導体形成工程とを備え、前記中間層形成工程と前記積層半導体形成工程との間に、前記中間層に対してプラズマ処理を行う前処理工程が備えられ、かつ、前記積層半導体形成工程に含まれる前記下地層の形成工程が、前記下地層をスパッタ法によって成膜する工程であるＩＩＩ族窒化物半導体発光素子の製造方法。
PCT/JP2008/052023 2007-02-21 2008-02-07 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ WO2008102646A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/439,937 US8198179B2 (en) 2007-02-21 2008-02-07 Method for producing group III nitride semiconductor light-emitting device

Applications Claiming Priority (2)

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JP2007-040691 2007-02-21
JP2007040691A JP4191227B2 (ja) 2007-02-21 2007-02-21 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ

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WO2008102646A1 true WO2008102646A1 (ja) 2008-08-28

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102187482A (zh) * 2008-10-20 2011-09-14 住友电气工业株式会社 制造氮化物基半导体发光元件的方法和制造外延晶片的方法
US8592240B2 (en) 2008-10-03 2013-11-26 Toyoda Gosei Co., Ltd. Method for manufacturing semiconductor light-emitting element
US20170309480A1 (en) * 2010-12-27 2017-10-26 Canon Anelva Corporation Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110045056A (ko) 2008-09-16 2011-05-03 쇼와 덴코 가부시키가이샤 Ⅲ족 질화물 반도체 발광 소자의 제조 방법, ⅲ족 질화물 반도체 발광 소자 및 램프
JP2010092934A (ja) * 2008-10-03 2010-04-22 Showa Denko Kk 半導体発光素子の製造方法
JP2010157609A (ja) * 2008-12-26 2010-07-15 Showa Denko Kk 半導体発光素子の製造方法
US8860183B2 (en) * 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
CN104795313B (zh) * 2009-08-26 2017-12-08 首尔伟傲世有限公司 制造半导体基底的方法和制造发光装置的方法
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
JP5310604B2 (ja) * 2010-03-05 2013-10-09 豊田合成株式会社 半導体発光素子の製造方法および半導体発光素子、ランプ、電子機器、機械装置
JP2011071546A (ja) * 2010-12-10 2011-04-07 Showa Denko Kk 化合物半導体ウェーハの製造方法
US20130140525A1 (en) * 2011-12-01 2013-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Gallium nitride growth method on silicon substrate
US9929310B2 (en) 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
US9574287B2 (en) * 2013-09-26 2017-02-21 Globalfoundries Inc. Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
TWI564410B (zh) * 2014-04-25 2017-01-01 明志科技大學 氮化鋁薄膜的物理氣相沉積
JP6740623B2 (ja) * 2015-04-24 2020-08-19 東ソー株式会社 窒化ガリウム系膜ならびにその製造方法
US10784173B2 (en) * 2017-04-24 2020-09-22 United States Of America As Represented By The Secretary Of The Air Force Proton radiation as a tool for selective degradation and physics based device model test and calibration
TWI825187B (zh) * 2018-10-09 2023-12-11 日商東京威力科創股份有限公司 氮化物半導體膜之形成方法
CN110643934A (zh) * 2019-09-20 2020-01-03 深圳市晶相技术有限公司 一种半导体设备
DE102020121750B3 (de) * 2020-08-19 2022-01-27 Otto-von-Guericke-Universität Magdeburg, Körperschaft des öffentlichen Rechts Verfahren zum Wachsen einer Halbleiteranordnung und Halbleiteranordnung

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936427A (ja) * 1995-07-18 1997-02-07 Showa Denko Kk 半導体装置及びその製造方法
JPH09205254A (ja) * 1996-01-26 1997-08-05 Mitsubishi Electric Corp 半導体装置の製造方法および半導体製造装置並びに半導体レーザの製造方法
JPH11243056A (ja) * 1998-02-24 1999-09-07 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体の製造方法
JPH11354846A (ja) * 1996-01-19 1999-12-24 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JP2001094150A (ja) * 1999-09-21 2001-04-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2003347580A (ja) * 2002-05-28 2003-12-05 Tokyo Gas Co Ltd ダイヤモンド紫外線発光素子
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物
JP2006036561A (ja) * 2004-07-23 2006-02-09 Toyoda Gosei Co Ltd 半導体結晶の結晶成長方法、光半導体素子、及び結晶成長基板

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039819A (ja) 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の作製方法
JPS60173829A (ja) 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JPH088217B2 (ja) 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
EP0564915B1 (en) * 1992-03-26 2001-10-04 Canon Kabushiki Kaisha Methods for growing compound semiconductor layers
JPH05347456A (ja) * 1992-06-12 1993-12-27 Canon Inc 結晶改善された化合物半導体デバイスの製造方法
JP3773282B2 (ja) * 1995-03-27 2006-05-10 豊田合成株式会社 窒化ガリウム系化合物半導体の電極形成方法
US5650361A (en) * 1995-11-21 1997-07-22 The Aerospace Corporation Low temperature photolytic deposition of aluminum nitride thin films
US6165812A (en) * 1996-01-19 2000-12-26 Matsushita Electric Industrial Co., Ltd. Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
JPH09260289A (ja) 1996-03-19 1997-10-03 Nippon Steel Corp 化合物半導体単結晶の成長方法
US6541797B1 (en) * 1997-12-04 2003-04-01 Showa Denko K. K. Group-III nitride semiconductor light-emitting device
JPH11274535A (ja) 1998-03-26 1999-10-08 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置の製造装置
JP3567790B2 (ja) * 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
JP2000286448A (ja) * 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP3440873B2 (ja) 1999-03-31 2003-08-25 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP4613373B2 (ja) * 1999-07-19 2011-01-19 ソニー株式会社 Ｉｉｉ族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法
JP2001085737A (ja) * 1999-09-10 2001-03-30 Sharp Corp 窒化物半導体発光素子
JP3577463B2 (ja) 2001-02-20 2004-10-13 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光ダイオード
JP2003048799A (ja) 2001-08-01 2003-02-21 Ngk Insulators Ltd Ｉｉｉ族窒化物膜の製造方法
JP2004179457A (ja) * 2002-11-28 2004-06-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US20050122828A1 (en) * 2003-09-29 2005-06-09 Matsushita Electric Industrial Co., Ltd. Magnetic switching device and memory using the same
WO2005071720A1 (en) 2004-01-26 2005-08-04 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
JP2005259820A (ja) * 2004-03-09 2005-09-22 Sharp Corp Ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
TWI236167B (en) 2004-08-04 2005-07-11 Formosa Epitaxy Inc Light-emitting layer structure of GaN light emitted diode
JP2006080426A (ja) 2004-09-13 2006-03-23 Sharp Corp 発光ダイオード
US8486845B2 (en) 2005-03-21 2013-07-16 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
JP5010129B2 (ja) * 2005-09-30 2012-08-29 株式会社東芝 発光ダイオード及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936427A (ja) * 1995-07-18 1997-02-07 Showa Denko Kk 半導体装置及びその製造方法
JPH11354846A (ja) * 1996-01-19 1999-12-24 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JPH09205254A (ja) * 1996-01-26 1997-08-05 Mitsubishi Electric Corp 半導体装置の製造方法および半導体製造装置並びに半導体レーザの製造方法
JPH11243056A (ja) * 1998-02-24 1999-09-07 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体の製造方法
JP2001094150A (ja) * 1999-09-21 2001-04-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2003347580A (ja) * 2002-05-28 2003-12-05 Tokyo Gas Co Ltd ダイヤモンド紫外線発光素子
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物
JP2006036561A (ja) * 2004-07-23 2006-02-09 Toyoda Gosei Co Ltd 半導体結晶の結晶成長方法、光半導体素子、及び結晶成長基板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8592240B2 (en) 2008-10-03 2013-11-26 Toyoda Gosei Co., Ltd. Method for manufacturing semiconductor light-emitting element
CN102187482A (zh) * 2008-10-20 2011-09-14 住友电气工业株式会社 制造氮化物基半导体发光元件的方法和制造外延晶片的方法
US20170309480A1 (en) * 2010-12-27 2017-10-26 Canon Anelva Corporation Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

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