WO2006016550A1 - 加熱プレートの温度測定方法、基板処理装置及び加熱プレートの温度測定用のコンピュータプログラム - Google Patents
加熱プレートの温度測定方法、基板処理装置及び加熱プレートの温度測定用のコンピュータプログラム Download PDFInfo
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- WO2006016550A1 WO2006016550A1 PCT/JP2005/014510 JP2005014510W WO2006016550A1 WO 2006016550 A1 WO2006016550 A1 WO 2006016550A1 JP 2005014510 W JP2005014510 W JP 2005014510W WO 2006016550 A1 WO2006016550 A1 WO 2006016550A1
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- temperature
- temperature detection
- heating plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
Definitions
- Heating plate temperature measuring method substrate processing apparatus, and heating plate temperature measuring computer program
- the present invention relates to a substrate processing apparatus for performing heat treatment on a surface of a substrate such as a semiconductor wafer, a photomask substrate, and an LCD (Liquid Crystal Display) substrate (liquid crystal display glass substrate) by a heating plate.
- the invention relates to a method for measuring a temperature of a heating plate, a substrate processing apparatus, and a computer program for measuring the temperature of the heating plate.
- a resist pattern is formed on the substrate by a technique called photolithography.
- a resist solution is applied to a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), a liquid film is formed on the surface of the wafer, the resist film is exposed using a photomask, and then developed. Is performed by a series of steps to obtain a desired pattern.
- Such a resist pattern forming process is generally performed using a resist pattern forming apparatus in which an exposure apparatus is connected to a coating Z developing apparatus for applying and developing a resist solution.
- FIG. 20 is a plan view showing an example of a conventional resist pattern forming apparatus.
- a conventional resist pattern forming apparatus includes a carrier block 1A including a carrier stage 11 into which carrier C containing 25 wafers W is loaded and unloaded, a processing block 1B, and an interface block 1C. And an exposure apparatus 1D.
- the processing block 1B includes a transport unit 12 in the center, a coating unit 13A for applying a resist solution to the wafer around the transport unit 12, a developing unit 13B for performing development processing on the exposed wafer, and the like.
- Processing block 1A is a transfer arm that transfers wafer W between carrier C and processing block 1B. Is provided.
- the heating unit includes a heating unit, for example, and performs a predetermined heat treatment on the wafer W by placing the wafer W on a heating plate set to a predetermined temperature.
- Such heating units include pre-baking to volatilize the thinner in the resist components, post-exposure baking to alleviate the fringes of the resist pattern, and evaporation of residual rinse solution during development.
- the resist pattern forming apparatus is provided with a plurality of heating units for performing each process.
- the heating plate is divided into a plurality of heating zones that are heated independently by a plurality of concentric heaters!
- the heating unit is controlled.
- FIG. 21 is a perspective view showing a wafer for measuring the temperature of the heating plate.
- the temperature characteristics of the heating plate are measured by placing temperature sensors on the heating plate, for example, by placing wafers W provided at, for example, 40 locations within the surface, and measuring the temperature at predetermined intervals. Yes.
- the serial cable 18 connects the temperature sensor 16 and a measuring instrument 17 provided outside the wafer W and having a memory for storing temperature data from each temperature sensor 16. It is necessary to connect with.
- This wireless wafer includes a temperature sensor, a battery, a memory, and a controller on the wafer itself, and is configured so that temperature data can be stored in the memory at a cycle of, for example, 1 second.
- a technique for evaluating the uniformity of the substrate temperature during the heat treatment using such a wireless wafer a technique disclosed in Japanese Patent Laid-Open No. 11-307606 (Patent Document 1) is known.
- Patent Document 1 Japanese Patent Laid-Open No. 11-307606
- a wireless wafer If a wireless wafer is used, there is a merit that it can be transferred to the heating unit by the transfer unit in the same way as a normal wafer W.
- the wireless wafer is transferred into or out of which heating unit at any timing. I do not recognize. For this reason, the timing when the wireless wafer is placed on the heating plate is not divided, and it is difficult to grasp temperature data at an accurate timing.
- the present inventors also determine the timing when the wireless wafer is placed on the heating plate, and also determine the timing when the wireless wafer is placed on the heating plate, for example, the point that the temperature rises by 10 ° C or more in 5 seconds. is doing.
- FIG. 22A is a characteristic diagram showing an example of the temperature rising pattern of the heating plate.
- FIG. 22B is an enlarged view of a portion indicated by B in FIG. 22A.
- the setting of the temperature rising pattern of the heating plate is incorrect.
- the heating plate is heated by multiple heaters, it is impossible to know the exact temperature rise pattern in each heating zone, and heat treatment with high in-plane uniformity is performed by aligning the temperature rise patterns in each zone. Therefore, it becomes difficult to control.
- the beginning of temperature rise after a gentle temperature rise, Since the temperature rises suddenly, if there is an error of 1 second in grasping the timing, the variation in the temperature rise pattern will increase.
- Patent Document 1 also describes a method for recognizing the timing when a wireless wafer is placed on a heating plate. The method in Ref. 1) cannot be used to measure the temperature of the heating plate.
- the present invention has been made under such circumstances, and an object of the present invention is to easily and accurately measure the temperature of the heating plate for heat-treating the substrate, and the force is also determined by the measurement work.
- the present invention is to provide a method for measuring the temperature of a heating plate, a substrate processing apparatus, and a computer program for measuring the temperature of the heating plate that suppress a decrease in operating efficiency.
- a method for measuring a temperature of a heating plate includes a carrier carry-in unit for carrying a carrier containing a plurality of substrates, and a substrate placed on the heating plate.
- a substrate processing apparatus comprising a processing unit including a heating unit that performs heat treatment and a carrier carry-in unit receiving a substrate and transporting the substrate to the processing unit, and measuring a temperature of the heating plate, Temperature detection unit including temperature detection unit, storage unit and substrate controller The process of transferring the temperature detection substrate to the heating unit along the predetermined transfer path by the transfer unit, and temperature detection at a predetermined position in the transfer path Start command output process to output temperature measurement start command to the board controller of the circuit board, and when the temperature detection board receives the temperature measurement start command, The process of storing the column data in the storage unit, the position force of the temperature detection substrate when the temperature measurement start command is output, the transport time until the temperature detection substrate is placed on the heating plate, and the temperature in the storage unit And a time-series data extracting step of extracting time-series data of the temperature detection values after the temperature detection substrate is placed on the heating plate based on the time-series data of the detection values.
- time-series data of temperature detection values after the adjustment computer force temperature detection substrate is placed on the heating plate is extracted.
- the heating plate included in the heating plate is further based on time-series data of temperature detection values after the temperature detection substrate is placed on the heating plate. A step of correcting a control parameter of the unit.
- the heating plate is divided into a plurality of heating regions and is configured to independently heat each divided region by a plurality of heating units
- the temperature detection unit included in the temperature detection substrate includes: , Provided at the position corresponding to each divided area! / Speak.
- the heating plate is divided into a plurality of heating regions in the circumferential direction, and is configured so that each of the divided regions is independently heated by a plurality of heating units, and the temperature included in the temperature detection substrate.
- a plurality of detection units are provided to detect the temperature of each divided region, and the temperature measurement method of the heating plate is further determined by the orientation of the temperature detection substrate when the temperature detection substrate is placed on the heating plate.
- the method includes a step of correcting the control parameter of each heating unit based on the time series data of the temperature detection value of each divided region obtained based on the time series data of the temperature detection value of each temperature detection unit.
- the temperature detection substrate is stored, and a carrier controller provided on the carrier placed in the carrier carry-in section outputs a temperature measurement start command, and the temperature measurement start command is This is output when the temperature detection substrate is taken out of the carrier by the transport unit.
- the heating unit included in the heating plate is further based on time-series data of temperature detection values after the temperature detection substrate is placed on the heating plate. A step of correcting the control parameter of the method.
- the heating plate is divided into a plurality of heating regions and is configured to independently heat each divided region by a plurality of heating units, and the temperature detection unit included in the temperature detection substrate. Is provided at a position corresponding to each divided area! / Speak.
- the heating plate is divided into a plurality of heating regions in the circumferential direction, and each of the divided regions is configured to be independently heated by a plurality of heating units, and the temperature included in the temperature detection substrate.
- a plurality of detection units are provided to detect the temperature of each divided region, and the temperature measurement method of the heating plate further includes the direction of the temperature detection substrate when the temperature detection substrate is placed on the heating plate. Obtained based on time-series data of temperature detection values of each temperature detector
- the method includes a step of correcting the control parameters of each heating unit based on the time-series data of the temperature detection values of the respective divided regions.
- a temperature controller is provided, and a carrier controller provided in a carrier placed in the carrier carry-in section outputs a temperature measurement start command. This is output when the temperature detection board is taken out of the carrier by the transfer unit.
- a substrate processing apparatus performs a heat treatment by placing a substrate on a heating plate and a carrier carry-in section for carrying a carrier containing a plurality of substrates.
- a processing unit including a heating unit, a transport unit that receives a substrate from a carrier carry-in unit and transports the substrate to the processing unit, and a temperature detection substrate including a temperature detection unit, a storage unit, and a substrate controller are placed on a predetermined transport path.
- a control unit that controls the transfer unit to transfer the heating unit to the heating unit, a carrier controller that outputs a temperature measurement start command to the substrate controller of the temperature detection substrate at a predetermined position in the transfer path, Positional force of the temperature detection board when the temperature measurement start command is outputTemperature transfer time until the temperature detection board is placed on the heating plate, and temperature measurement start The temperature detection value after the temperature detection substrate is placed on the heating plate based on the time detection data stored in the storage unit included in the temperature detection substrate in response to the start command.
- a substrate processing apparatus comprising: an adjustment computer that extracts time-series data.
- control unit further corrects the control parameters of the heating unit included in the heating plate based on the time-series data of the temperature detection value after the temperature detection substrate is placed on the heating plate. To do.
- the heating plate is divided into a plurality of heating regions, and each divided region is configured to be independently heated by the plurality of heating units, and is included in the temperature detection substrate. Is provided at a position corresponding to each divided area! / Speak.
- the heating plate is divided into a plurality of heating regions in the circumferential direction, and is configured so that each of the divided regions is independently heated by a plurality of heating units, and the temperature included in the temperature detection substrate.
- a plurality of detection units are provided to detect the temperature of each divided region, and the control unit further includes a temperature detection base when the temperature detection substrate is placed on the heating plate. Based on the time-series data of the temperature detection values of each divided region obtained based on the plate direction and the time-series data of the temperature detection values of each temperature detection unit, the control parameters of each heating unit are corrected.
- the carrier controller is provided in a carrier that houses the temperature detection substrate and is placed in the carrier carry-in portion, and outputs a temperature measurement start command when the temperature detection substrate is taken out from the carrier by the conveyance portion. To do.
- the heating plate is divided into a plurality of heating regions, and each of the divided regions is configured to be independently heated by the plurality of heating units, and the temperature detection unit included in the temperature detection substrate includes , Provided at the position corresponding to each divided area! / Speak.
- the heating plate is divided into a plurality of heating regions in the circumferential direction, and is configured so that each of the divided regions is independently heated by a plurality of heating units, and the temperature included in the temperature detection substrate.
- a plurality of detection units are provided to detect the temperature of each divided region, and the control unit further includes the direction of the temperature detection substrate and the temperature detection unit when the temperature detection substrate is placed on the heating plate. Based on the time series data of the temperature detection values of each divided region obtained based on the time series data of the temperature detection values, the control parameters of each heating unit are corrected.
- the carrier controller accommodates the temperature detection substrate and is provided on the carrier placed in the carrier carry-in portion, and outputs a temperature measurement start command when the temperature detection substrate is taken out from the carrier by the conveyance portion. To do.
- a computer program for measuring the temperature of a heating plate includes a carrier carry-in unit for carrying a carrier containing a plurality of substrates, and a substrate on the heating plate.
- a substrate processing apparatus comprising a processing unit including a heating unit that is placed and heat-treated, and a transport unit that receives a substrate from a carrier carry-in unit and transports the substrate to the processing unit
- a start instruction to output a temperature measurement start command to the board controller of the temperature detection board at a predetermined position in the path An output step, the time-series data of temperature detection substrate the temperature detection value by receiving the temperature measurement start command to the storage portion Steps to store, transport time from the position of the temperature detection substrate when the temperature measurement start command is output until the temperature detection substrate is placed on the heating plate, and time-series data of the temperature detection value in the storage unit
- a time-series data extraction step for extracting time-series data of temperature detection values after the temperature detection substrate is placed on the heating plate.
- time-series data of the temperature detection values after the adjustment computer force temperature detection substrate is placed on the heating plate is extracted.
- the temperature of the heating plate is measured using the temperature detection substrate including the temperature detection unit, the storage unit, and the controller, and thus the temperature of the heating plate can be easily and highly accurately. Can be measured.
- the position force of the temperature detection substrate when the temperature measurement start command is output.
- the time-series data of the temperature detection values after the temperature detection substrate is placed on the heating plate is taken out, so the timing when the temperature detection substrate is transported to the heating plate is accurately determined. It is possible to grasp and time-series data of temperature detection values can be extracted with high accuracy, and temperature measurement can be performed with high accuracy.
- FIG. 1 is a plan view of a substrate processing apparatus (resist pattern forming apparatus) 100 according to a first embodiment of the present invention.
- FIG. 2 is a schematic perspective view of a substrate processing apparatus (resist pattern forming apparatus) 100 according to the first embodiment of the present invention.
- FIG. 3 is a side view showing a shelf unit in the substrate processing apparatus 100.
- FIG. 4A is a cross-sectional view showing a heating unit in the substrate processing apparatus 100.
- FIG. 4A is a cross-sectional view showing a heating unit in the substrate processing apparatus 100.
- FIG. 4B is a cross-sectional view showing a heating unit in the substrate processing apparatus 100.
- FIG. 5 is a plan view of the heating plate 34.
- FIG. 6 is a perspective view of a wireless wafer Ww.
- FIG. 7 is a view showing a cross-section and the like of a wireless wafer carrier Cw.
- FIG. 8 is a diagram showing a configuration of the adjustment computer 5.
- FIG. 9 is a diagram showing the configuration of the control unit 6.
- FIG. 10 is a flowchart defining an operation procedure when the substrate processing apparatus 100 according to the first embodiment of the present invention measures the temperature of the heating plate 34.
- FIG. 11 is a characteristic diagram showing time-series data of temperature detection values of the heating plate.
- FIG. 12A is a schematic perspective view showing an example of a heating plate in the second embodiment of the present invention.
- FIG. 12B is a schematic perspective view showing an example of a wireless wafer Ww in the second embodiment of the present invention.
- FIG. 13A is a schematic perspective view showing an example of a heating plate in the second embodiment of the present invention.
- FIG. 13B is a schematic perspective view showing an example of a wireless wafer Ww in the second embodiment of the present invention.
- FIG. 15 is a diagram illustrating a configuration of a control unit 9
- FIG. 16 is a diagram for explaining a carry-in angle of the wireless well and Ww carried into the heating unit.
- FIG. 17 is a characteristic diagram showing time-series data of temperature detection values of the heating plate by each temperature sensor.
- FIG. 18 is a view showing a table in which a wireless wafer to be carried into each heating unit, a carry-in angle of Ww, and a heater position of each temperature sensor are written.
- FIG. 19 is a characteristic diagram showing time-series data of temperature detection values of each heater.
- FIG. 20 is a plan view showing an example of a conventional resist pattern forming apparatus.
- FIG. 21 is a perspective view showing a wafer for measuring the temperature of a heating plate.
- FIG. 22A is a characteristic diagram showing an example of a temperature rising pattern of a heating plate.
- FIG. 22B is an enlarged view of a portion indicated by B in FIG. 22A.
- FIG. 1 is a plan view of a substrate processing apparatus (resist pattern forming apparatus) 100 according to the first embodiment of the present invention.
- FIG. 2 is a schematic perspective view of a substrate processing apparatus (resist pattern forming apparatus) 100 according to the first embodiment of the present invention.
- the substrate processing apparatus 100 has a configuration in which an exposure apparatus is connected to the coating Z developing apparatus.
- the carrier carrying-in part B1 carries in / out a carrier C in which, for example, 13 wafers W serving as substrates are hermetically stored and a carrier Cw for a wireless wafer in which a carrier wafer Ww is stored.
- the carrier loading section B1 includes a mounting table 20 on which a plurality of carriers C and a plurality of wireless wafer carriers Cw can be mounted, an opening / closing section 21 provided on the front wall as viewed from the mounting table 20, and an opening / closing section 21. And a transfer arm A1 for taking out the wafer W from the carrier C or the wireless wafer Ww from the wireless wafer carrier Cw.
- a processing unit B2 surrounded by a casing 22 is connected to the back side of the carrier carry-in unit B1, and a heating / cooling system is sequentially applied to the processing unit B2 with the front side force also directed to the back side.
- the main transport mechanisms A2 and A3 that deliver ENO and W are alternately arranged. That is, the shelf units Ul, U2, U3 and the main transfer mechanisms A2, A3 are arranged in a line in the front-rear direction when viewed from the carrier carry-in part B1, and an opening for wafer transfer (not shown) is formed at each connection part.
- the wafer W can freely move in the processing section B2 from the shelf unit U1 on one end side to the shelf unit U3 on the other end side.
- the main transport mechanisms A2, A3 are arranged in the front-rear direction as viewed from the carrier carry-in part B1, and on one side of the shelf units Ul, U2, U3, and on the right side of the liquid processing units U4, U5. And a space surrounded by a section wall 23 composed of a back surface forming one surface on the left side.
- the main transfer mechanisms A2 and A3 are configured to be movable back and forth and up and down and rotatable about the vertical axis, and transfer wafers W between the shelf units ui, U2, U3 and liquid processing units U4, U5. can do.
- the driving of the main transport mechanisms A2 and A3 is controlled by a controller based on a command from the control unit 6 described later.
- the temperature and humidity control units 24 and 25 are provided with a temperature control device for the processing liquid used in each processing unit and a duct for temperature and humidity control.
- the liquid processing units U4 and U5 are, for example, an antireflection film coating unit (BA RC) on the storage portion 26 that forms a space for supplying a chemical liquid such as an antireflection film, a resist solution, and a developer.
- the resist coating unit (COT) and the developing unit (DEV) are stacked in a plurality of stages, for example, five stages.
- the antireflection film coating unit is referred to as an antireflection film unit
- the resist coating unit is referred to as a coating unit.
- FIG. 3 is a side view showing a shelf unit in the substrate processing apparatus 100.
- shelf units Ul, U2, U3 have a structure in which a plurality of processing units for performing pre-processing and post-processing of processing performed in liquid processing units U4, U5 are stacked in a plurality of stages.
- processing units for performing the pre-processing and post-processing described above there are a transfer unit (TRS), a temperature control unit (CPL) for adjusting the wafer W to a predetermined temperature, and before applying the resist liquid.
- Heating unit (BAKE) for performing heat treatment of wafer W
- pre-baking unit for performing heat treatment of wafer W after application of resist solution, etc.
- Post-exposure that heats wafer W It is called a jar baking unit, and is called a heating unit (PEB) and a post baking unit that heats the wafer W after development! /, A heating unit (POST), etc. include.
- PB heating unit
- POST heating unit
- This figure shows an example of the layout of these units. This layout is for convenience. In an actual device, the number of units installed is determined in consideration of the processing time of each unit.
- An exposure apparatus B4 is connected to the back side of the shelf unit U3 in the processing block B2 via an interface unit B3.
- the interface unit B3 is composed of a first transfer chamber 27 and a second transfer chamber 28 provided before and after the processing unit B2 and the exposure apparatus B4.
- Each of the main transfer units forms a second transfer unit.
- Part A4 and auxiliary transport part A5 are provided.
- a heating unit, a delivery unit, a temperature adjustment unit, a coating unit, an antireflection film forming unit, and a developing unit correspond to the processing unit.
- the delivery arm A1 and the main transfer mechanisms A2 and A3 correspond to the first transfer unit in the embodiment of the present invention. That is, the first transport unit receives the wafer W and the wireless wafer Ww from the carrier carry-in unit B1 and transports them to the processing unit.
- FIG. 1 An example of the transfer path of the wafer W when a resist pattern is formed on the product wafer W by the substrate processing apparatus 100 is shown before processing in the carrier C placed on the carrier carry-in portion B1.
- the wafer W is transferred to the transfer unit (TRS) by the transfer arm A1, and then the wafer W is transferred by the main transfer mechanism A2 and A3 to the temperature control unit (CPL) ⁇ antireflection film forming unit (BARC) ⁇ heating unit ( BAKE) ⁇ Temperature control unit (CPL) ⁇ Coating unit (COT)
- the resist solution is applied.
- the wafer W is sent to the exposure apparatus B4 via the heating unit (PAB) ⁇ temperature control unit (CPL) ⁇ delivery unit (TRS) ⁇ interface B3, and a predetermined exposure process is performed.
- PAB heating unit
- CPL temperature control unit
- TRS delivery unit
- the wafer W after the exposure process is returned to the processing unit B2 through the reverse path. That is, the wafer W after the exposure processing is transported to the heating unit (PEB) ⁇ temperature control unit (CPL) ⁇ development unit (DEV), where development processing is performed, and then the heating unit (POST) ⁇ temperature control unit. (CPL) ⁇ transported in order of shelf unit U1 delivery unit (TRS), and returned to carrier C in carrier loading section B1 by delivery arm A1.
- FIG. 4A and 4B are cross-sectional views showing the heating unit in the substrate processing apparatus 100.
- FIG. 4A and 4B are cross-sectional views showing the heating unit in the substrate processing apparatus 100.
- the heating unit includes a casing 31, a stage 32, a cooling plate 33 having a slit 30 that is movable to the left and right in the figure above the stage, and a heating plate 34. And wafer W loading / unloading ports 35, 36, shirters 37, 38 for opening / closing the loading / unloading ports 35, 36, and lifting pins 39a, 39b, each of which constitutes one set.
- the inside of the casing 31 is accessed from the main transfer mechanisms A2 and A3, and in the heating unit (PEB) provided in the shelf unit U3, the main transfer mechanism A3 The inside of the casing 31 can be accessed from the main transfer section A4.
- FIG. 5 is a plan view of the heating plate 34.
- heating plate 34 includes a heating unit for heating heating plate 34 to a predetermined temperature.
- the heating unit is composed of, for example, heaters H (H1 to H3) made up of three concentric (ring-shaped) resistance heating wires. Accordingly, the heating plate 34 is independently heated in a state of being divided into three heating regions (zones) in the radial direction by the heaters H (H1 to H3), and the temperature is controlled for each of the three zones.
- a heating unit that performs beta processing or post-baking processing is not shown, but, for example, a wafer W is placed and the wafer W is heated at a predetermined temperature. It has a heating plate 34 to be applied. Further, the temperature control unit (CPL) has a temperature control plate (not shown), for example, on which the wafer W is mounted and the wafer subjected to each heat treatment is subjected to a temperature adjustment treatment at a predetermined temperature! / RU
- FIG. 6 is a perspective view of the wireless wafer Ww.
- wireless wafer Ww includes a temperature sensor 41 that forms a temperature detection unit on the wafer itself, and a controller (substrate controller) 42 that includes a battery and a storage unit therein.
- Each temperature sensor 41 is connected to the controller 42 by, for example, a cable 43.
- Each temperature sensor 41 is provided at a position corresponding to three heating zones of the heating plate 34, for example.
- the wireless wafer Ww is obtained in this manner by detecting temperature data at a predetermined cycle, for example, 1 second cycle, by the temperature sensor 41, for example, in response to an output of a temperature detection start command to the controller 42 as described later.
- the time series data of the detected temperature values can be stored in the storage unit.
- FIG. 7 is a view showing a cross section and the like of the wireless wafer carrier Cw.
- the wireless wafer carrier Cw is configured to be able to transmit and receive wirelessly with the controller 42 of the wireless wafer Ww, outputs a measurement start command to the temperature detection unit 41, and stores in the storage unit of the controller 42.
- a controller (carrier controller) 45 that reads time-series data of temperature detection values stored in the storage unit 45, and a holding unit 44 that holds the wireless wafer Ww.
- the controller 45 is configured to be able to exchange data with the adjustment computer 5 provided outside the wireless wafer carrier Cw wirelessly or by wire.
- FIG. 8 is a diagram showing a configuration of the adjustment computer 5.
- the adjustment computer 5 is actually composed of a CPU (central processing unit), a program, a memory, and the like. Here, a part of the constituent elements will be described as a block.
- adjustment computer 5 includes a nose 500, a temperature data storage unit 501 connected to bus 500, a temperature data acquisition unit 502, a summary data calculation unit 503, An offset calculation unit 504, a data display unit 505, and a data transmission / reception unit 506 are provided.
- the temperature data storage unit 501 stores time-series data of temperature detection values measured by the wireless wafer Ww and transmitted via the controller 45.
- the temperature data acquisition unit 502 uses the time series data of the temperature detection values measured by the wireless wafer Ww and the transfer history of the wireless wafer Ww managed by the control unit 6 to be described later. Time-series data of temperature detection values after being mounted on the For each heating unit.
- the summary data calculation unit 503 calculates summary data that is temperature information of the heating plate 34, for example, an average value of the in-plane temperature of the heating plate 34 in a predetermined time zone (hereinafter referred to as “average value” And the in-plane temperature difference of the heating plate 34, for example, the temperature difference of each zone heated by the heaters H1 to H3 (hereinafter referred to as “range”).
- the offset calculation unit 504 calculates an offset value based on the comparison result between the average value and range of the in-plane temperature of the heating plate and the target temperature range and the target in-plane temperature difference.
- the offset value is adjusted to match the temperature target value so that the average value and range of the in-plane temperature of the heating plate based on the temperature detection value in each zone is within the target temperature range and the target in-plane temperature difference. Is required.
- the data display unit 505 displays the acquired temperature data, summary data, and offset value of the heating plate 34 on the operation screen of the adjustment computer 5, for example.
- Data transmission / reception unit 506 transmits / receives predetermined data to / from control unit 6 described later.
- the substrate processing apparatus 100 includes a heating unit (BAKE, PAB, PEB, POST) and other processing units such as a coating unit (COT), a developing unit (DEV), and a temperature control unit (CPL),
- a control unit 6 that controls at least the transfer system such as the transfer arm A1, the main transfer mechanisms A2, A3, and the second transfer unit (A4, A5) is provided.
- FIG. 9 is a diagram showing a configuration of the control unit 6.
- the control unit 6 is actually composed of a CPU, a program, a memory, and the like. Here, a part of the constituent elements will be described as a block.
- control unit 6 includes a node 600, a recipe storage unit 601, a recipe selection unit 602, a recipe creation unit 603, and a control parameter correction unit connected to bus 600. 604, a data display unit 605, and a data transmission / reception unit 606.
- the recipe storage unit 601 includes, for example, a temperature measurement recipe used in a temperature measurement mode for measuring the temperature of the calo heat plate 34, and a transfer path used in a processing mode for performing a resist pattern forming process on the product wafer W.
- a plurality of recipes such as process recipes in which processing conditions in each processing unit are recorded are stored.
- the temperature measurement recipe is used to measure the temperature of the heating plate 34 at the start-up of the apparatus or periodically. This is a recipe for measuring the temperature of the heating plate 34 at this time by transporting the wireless wafer Ww only to the heating unit and carrying out the normal heat treatment process in each heating unit. is there.
- the event is described together with the time.
- data such as the order of conveyance of the heating units, the time of heat treatment performed in the heating units, and the conveyance time are described according to a predetermined time axis.
- the wireless wafer Ww is transferred to the heating unit by the transfer arm A1 and the main transfer mechanisms A2 and A3 in accordance with a predetermined transfer path and a predetermined time.
- Recipe selection unit 602 selects an appropriate recipe power stored in recipe storage unit 601. More specifically, when the operator selects an appropriate recipe such as a temperature measurement recipe and a process recipe using an operation unit (operation screen) (not shown), the recipe selection unit 602 can select a recipe cartridge stored in the recipe storage unit 601. Also choose an appropriate one. In this way, the temperature measurement mode and the processing mode can be switched. The operator can also input, for example, the number of wafers to be processed and the type of resist using the operation unit.
- the recipe creation unit 603 creates a new temperature measurement recipe, process recipe, transfer recipe, and the like based on the operation of the operator.
- the control parameter correction unit 604 controls the heaters H1 to H3 in the heating plate 34 so that the heating plate 34 of each heating unit falls within a predetermined specification. Correct the parameters and output the corrected control parameters to the controller 61 of each heating unit.
- PID Proportional Integral Derivative
- Temperature control is performed in combination with fixed control (MV (Manipulated Value) control) that supplies power to the heaters H1 to H3 with an output pattern fixed by using a heater. Therefore, the control parameter correction unit 604 adjusts the input patterns of PID control and MV control using a predetermined algorithm based on the offset value transmitted from the adjustment computer 5.
- the data display unit 605 displays temperature data, summary data, and data of the created heating plate 34.
- the offset value is displayed on the operation screen of the computer which is the control unit 6.
- the data transmission / reception unit 606 transmits / receives predetermined data to / from the adjustment computer 5.
- the control unit 6 can exchange data wirelessly or by wire with the adjustment computer 5 of the wireless wafer carrier Cw provided outside the apparatus. Wireless wafer Ww temperature measurement start and end signals and offset values can be sent and received.
- control unit 6 is provided in the shelf units U1 to U5 in the processing unit B2 except for various heating units (PAB, PEB, POST, BAKE) and heating tubes HPAB, PEB, POST, BAKE).
- Various processing units such as coating unit (COT), development unit (DEV), and temperature control unit (CPL), delivery arm A1, main transport mechanism A2, A3, and second transport unit A4, A5, etc.
- COT coating unit
- DEV development unit
- CPL temperature control unit
- delivery arm A1 main transport mechanism A2, A3, and second transport unit A4, A5, etc.
- controllers 61-63 To each of the transport systems via respective controllers 61-63. The operation of each processing unit and the like is controlled by the controllers 61 to 63 based on commands from the control unit 6.
- FIG. 10 is a flowchart defining an operation procedure when the substrate processing apparatus 100 according to the first embodiment of the present invention measures the temperature of the heating plate 34.
- the adjustment computer 5, the control unit 6, the wireless wafer carrier Cw, and the wireless wafer Ww read and execute a program having each step of the flow chart by reading the memory with an unillustrated memory. This program can also install external force.
- the operator first selects a temperature measurement recipe for the heating unit (step Sl).
- this recipe for example, an outline of the temperature measurement recipe and a temperature measurement start switch are displayed on the operation screen of the control unit 6.
- the control unit 6 outputs a temperature measurement start signal to the controller 45 of the wireless wafer carrier Cw via the adjustment computer 5 (step S2).
- a temperature measurement start command is output from the controller 45 to the controller 42 of the wireless wafer Ww.
- the controller 42 receives the temperature measurement start signal, causes the temperature sensor 41 to start temperature measurement at a predetermined period, for example, 1 second period, and stores the time series data of the measured temperature detection value in the storage unit. (Step S3).
- the step of outputting the temperature measurement start command to the controller 42 of the wireless wafer Ww is performed inside the wireless wafer carrier Cw, so that a predetermined position on the predetermined transfer path is determined. Corresponds to the position in the carrier Cw for the wireless wafer.
- the wireless wafer Ww is taken out from the wireless wafer carrier Cw by the transfer arm A 1 based on the temperature measurement start signal, and the predetermined transfer path and the predetermined are determined. (Step S4).
- the wireless wafer Ww is placed on the heating plate 34, and when the elevating pins 39b are lowered, the sensor detects and heat treatment is started. Then, after the heat treatment is performed for a predetermined time, weno and Ww are transferred to the cooling plate 33 and the cooling process is started. After the predetermined time elapses, the wireless wafer Ww is unloaded from the first heating unit.
- the start timing of the cooling process is determined by the sensor detecting when the wafer W is delivered to the cooling plate 33.
- the Ueno and Ww carried out of the first heating unit are transported to the second heating unit for next temperature measurement by the main transport mechanisms A2 and A3, and are the same as the first heating unit. Temperature measurement is performed by the wireless wafer Ww (step S5). Next !, the wireless UE and Ww are transported to the third heating unit for temperature measurement, and the temperature is measured in the same way (step S6).
- the main transfer mechanisms A2, A3 and the delivery are performed.
- Arm A1 returns wireless wafer Ww to wireless wafer carrier Cw.
- a control end command is output from the controller 6 to the controller 42 of the wireless wafer Ww via the adjustment computer 5 and the controller 45.
- Wireless wafer Ww finishes temperature data measurement (Step S7, Step S8) .
- the wireless wafer Ww for example, the battery is charged.
- the adjustment computer 5 reads the time-series data of the temperature detection values collected in the storage unit of the wireless wafer Ww via the controller 45 and stores this data in the temperature data storage unit 501. (Step S9).
- the control unit 6 outputs the transfer history including the predetermined transfer route and time described in the temperature measurement recipe by the data transmission / reception unit 600 to the adjustment computer 5 (step S10).
- the temperature data acquisition unit 502 of the adjustment converter 5 includes a transfer time from the position of the wireless wafer Ww when the temperature measurement start command is output until the wireless wafer Ww is placed on the heating plate 34, and Based on the temperature detection value time-series data stored in the temperature data storage unit 501 via the storage unit of the wireless wafer Ww, the temperature detection value after the wireless wafer Ww is placed on the heating plate 34 The series data is extracted (step S11).
- FIG. 11 is a characteristic diagram showing time-series data of temperature detection values of the heating plate.
- the time-series data of the temperature detection values of the heating plate includes the transfer history indicating the transfer time and the event together with the temperature data of the heating plate 34.
- the summary data calculation unit 503 calculates summary data, that is, the average value and the range of the in-plane temperature of the heating plate (step S12).
- the offset calculation unit 504 compares the average value and range of the in-plane temperature of the heating plate with the target temperature range and the target in-plane temperature difference (step S13), and calculates the average value of the in-plane temperature of the heating plate. If the range is within specifications, the heating unit temperature measurement recipe ends.
- the specification means that the average value and range of the in-plane temperature of the heating plate is within the target temperature range and the target in-plane temperature difference.
- the target temperature range is, for example, the target temperature ⁇ 0.1 °.
- the target in-plane temperature difference is within 0.2 ° C.
- the offset calculation unit 504 calculates an offset value and outputs the calculated offset value to the control unit 6 (step S14).
- the control parameter correction unit 604 corrects the control parameters of the heaters H1 to H3 in the heating unit based on the offset value, and outputs the correction value of the control parameter to the controller 61 of the heating unit. And heating The subsequent processing is performed with the corrected control parameter (step S15).
- the control unit 6 selects a recipe so as to restart temperature measurement of the corrected heating unit (PAB), outputs a temperature measurement start command, and executes the temperature measurement recipe.
- the control unit 6 performs temperature detection by the wireless wafer Ww until the average value and range of the in-plane temperature of the heating plate based on the temperature detection value are within the target temperature range and the target in-plane temperature difference, Acquisition of temperature data of the heating plate 34, calculation of summary data, and calculation of the offset value are automatically repeated.
- a temperature measurement recipe is set up so that the wireless wafer Ww is transferred only to the corrected heating unit.
- the temperature of the heating plate 34 is measured by the wireless wafer Ww including the temperature detection unit 41, the storage unit, and the controller 42. Therefore, by automatically transporting the wireless wafer Ww to the heating unit to be measured for temperature data by the transfer arm A1 and the main transport mechanism A2 and A3, the heating plate in the heating unit to be measured for temperature data 34 The temperature characteristics of can be measured. For this reason, compared to measuring the temperature characteristics of the Calo heat plate 34 using a measurement wafer of a type in which a temperature sensor and a measuring instrument installed outside the measurement wafer are connected by a serial cable. Since the measurement wafer can be easily mounted on the heating plate, the measurement wafer is easy to handle, and there is no need to wait for the temperature inside the heating unit to stabilize. The decrease can be suppressed.
- the wireless wafer Ww is transferred to the heating unit by the control unit 6 along a predetermined transfer path.
- the position of the wafer Ww can be accurately grasped. Therefore, the timing when the wireless wafer Ww is placed on the heating plate 34 of the predetermined heating unit and the timing when the wireless wafer Ww is delivered from the heating plate 34 to the cooling plate can be accurately recognized.
- the wireless wafer Ww is located at a predetermined position on a predetermined transfer path, in this example, the position within the wireless wafer carrier Cw placed on the carrier carry-in portion B1.
- the temperature measurement start command is output to the controller 42 of the wireless wafer Ww until the wireless wafer Ww is placed on the heating plate 34 of the heating unit to be measured from the position in the wireless wafer carrier Cw. It is possible to accurately grasp the transfer time.
- the heating unit uses the grasped transfer time of the wireless wafer Ww and the time-series data of the temperature detection values stored in the storage unit of the wireless wafer Ww.
- the timing at which the wireless wafer Ww was placed on the heating plate 34 and the measurement temperature of the wireless wafer Ww at the timing when the wireless wafer Ww was delivered to the cooling plate could be accurately grasped and placed on the heating plate 34.
- the time series data of the later temperature detection values can be easily and accurately extracted.
- the operation in the process of each heating unit for example, the temperature at the time of placing the wireless wafer Ww on the heating plate 34 and the wireless wafer on the cooling plate by lowering the lifting pins, the temperature at the time of placing Ww Since the data can be specified, it becomes possible to accurately grasp the temperature data of each operation period based on the time-series data of the temperature detection values, and more accurate analysis can be performed.
- the temperature data up to the specified time and the temperature data for each zone can be acquired with high accuracy.
- the average value and range of the in-plane temperature of the heating plate can be accurately grasped. For this reason, it is possible to calculate the offset value with high accuracy, and by correcting the control parameter of the heating plate 34 based on the calculated offset value, the temperature rising pattern of each zone is changed in each calorie heat plate 34. It can be adjusted to align. As a result, the in-plane temperature distribution at the time of temperature rise in each zone can be made uniform, and in-plane uniformity high V and heat treatment can be performed.
- the wireless wafer in the heating unit (PAB, PEB) described above, the wireless wafer is placed on the heating plate 34 for a predetermined time, and then the cooling plate The wireless wafer Ww is placed for a predetermined time until it reaches a steady temperature, for example 24 ° C, and is used as the first temperature measurement data. Then, the wireless wafer Ww is again placed on the heating plate 34 for a predetermined time, and then the wireless wafer Ww is placed on the cooling plate for a predetermined time until the temperature reaches a constant temperature, to obtain second temperature measurement data.
- a steady temperature for example 24 ° C
- temperature data of the heating plate 34 is acquired a plurality of times, the summary data and the offset value are calculated for each of the data forces of the plurality of times, and these average values are set. May be.
- the temperature of the heating plate can be measured a plurality of times simply by transferring the wireless wafer Ww once to the heating unit to be measured.
- the control unit 6 calculates time series data, summary data, and offset values of the temperature detection values of the heating plate 34. You may go.
- the adjustment computer 5 outputs the temperature measurement start and end commands to the controller 45 based on the measurement start and measurement end commands from the control unit 6 and the storage unit power of the wireless wafer Ww.
- the time series data is transmitted to the control unit 6. Further, the adjustment computer 5 may correct the control parameter of the controller 61 of the heating unit based on the offset value.
- the heat treatment performed on the wafer includes a heat treatment at a positive temperature for heating the wafer and a negative temperature for cooling the wafer. Heat treatment.
- the substrate processing apparatus according to the first embodiment of the present invention has the temperature characteristics of the heating plate 34 included in the heating unit that performs the beta processing and the post-baking processing, and the temperature at a predetermined temperature with respect to the wafer. Temperature to apply the adjustment process It is also applicable when measuring the temperature characteristics of the temperature control plate of the adjustment unit.
- the temperature measurement start command is sent from the controller 45 of the carrier Cw to the controller 42 of the wireless wafer Ww. May be output. Also, when the substrate is returned to the wireless wafer carrier Cw and the controller 45 of the wireless wafer carrier Cw confirms the presence of the wireless wafer Ww, it outputs a measurement end command to the controller 42 of the wireless wafer Ww. The measurement of temperature data may be completed for wafer Ww.
- the predetermined position at which the temperature measurement start command is output to the controller 42 of the wireless wafer Ww is detected by the wireless wafer Ww in the transfer path. And the start time of the transfer time of the wireless wafer Ww to the heating plate 34.
- the predetermined position for outputting the temperature measurement start command that is not limited to such a configuration is that the temperature measurement start command is sent to the controller 42 before the wireless wafer Ww is transferred to the calo heat plate 34.
- the position can be output, it does not have to be in the wireless wafer carrier Cw placed in the carrier loading section B1, for example, in the buffer cassette provided in the carrier loading section B1 or the processing section B2. It may be a position.
- the control unit 6 outputs a measurement end command to the controller 42 of the wireless wafer Ww via the adjustment computer 5 and the controller 45.
- the wireless wafer Ww which is not limited to such a configuration, measures the temperature data for all the heating units for which the temperature data is to be measured, and then performs the wireless wafer carrier Cw.
- the control unit 6 may directly output a measurement end command to the controller 42 of the wireless wafer Ww to end the measurement of temperature data by the wireless wafer Ww.
- the wireless wafer Ww is transported to the heating unit along a predetermined transport path, and is transferred at a predetermined position on the predetermined transport path. Since the temperature measurement start command is output to the controller 42 of the wireless wafer Ww, the positional force of the wireless wafer Ww when the temperature measurement start command is output and the transfer time until the wireless wafer Ww is placed on the heating plate 34 Based on the time series data of the temperature detection value stored in the storage unit of the wireless wafer Ww, the time series data of the temperature detection value after the wireless wafer Ww is placed on the heating plate 34 can be extracted. .
- the present embodiment relates to a substrate processing apparatus in which the operation for adjusting the temperature rising patterns of each zone in each heating plate is changed. Configurations and operations other than those described below are the same as those of the substrate processing apparatus according to the first embodiment.
- the in-plane temperature of the heating plate 34 can be adjusted by knowing in advance which zone corresponds to which temperature sensor in the (zone)! Specifically, if the zones controlled by the heaters H1 to H3 are zones 1 to 3, the average value of the temperature detection values for each zone 1 to 3 can be grasped. Since the difference (range) between the average values of the temperature detection values is also divided, the power supply amount of each heater HI to H3 can be adjusted based on the average value and the range.
- FIG. 12A is a schematic perspective view showing an example of a heating plate in the second embodiment of the present invention.
- FIG. 12B is a schematic perspective view showing an example of the wireless wafer W w in the second embodiment of the present invention.
- FIG. 13A is a schematic perspective view showing an example of a heating plate in the second embodiment of the present invention.
- FIG. 13B is a schematic perspective view showing an example of a wireless wafer W w in the second embodiment of the present invention.
- a notch 80 which is a V-shaped notch for indicating the plane orientation, is formed on a part of the periphery of the wireless wafer Ww.
- the first temperature sensor 70 and the second temperature sensor 71 are provided diagonally across the temperature controller 42.
- FIG. 14 is a plan view of a substrate processing apparatus 100 according to the second embodiment of the present invention.
- the substrate processing apparatus 100 according to the second embodiment of the present invention is different from the substrate processing apparatus 100 according to the first embodiment of the present invention in that a control unit is used instead of the adjustment computer 5 and the control unit 6. With nine.
- FIG. 15 is a diagram showing a configuration of the control unit 9.
- the control unit 9 is actually composed of a CPU, a program, a memory, and the like. Here, a part of the components will be described as a block.
- control unit 9 includes nose 90, recipe storage unit 601, recipe selection unit 602, recipe creation unit 603, and data communication unit 701 connected to nose 90.
- the recipe storage unit 601, the recipe selection unit 602, and the recipe creation unit 603 have the same configuration as the substrate processing apparatus according to the first embodiment, and thus description thereof will not be repeated here.
- the data communication unit 701 communicates various data with the wireless wafer Ww.
- the data communication unit 701 receives, for example, a temperature detection start command to the controllers 82 and 83 and the temperature data detected by the first temperature sensor 70 and the second temperature sensor 71 via the output port 81.
- Temperature sensor data storage section 702 stores temperature data detected by first temperature sensor 70 and second temperature sensor 71 in each heating unit. [0118] Based on the temperature data stored in the temperature sensor data storage unit 702, the heater data storage unit 703 executes, for example, a temperature data creation program described later, and associates each heating unit with the heater. That is, the temperature data is stored in association with the divided area (heating control area) that the heater takes charge of.
- the program storage unit 710 stores a temperature data creation program 704 and a heater temperature correction program 705.
- the heater temperature correction program 705 is used for the temperature controllers 82 and 83 associated with each heater based on the temperature data for each divided region of the heating plate 34 stored in the heater data storage unit 703 and the preset temperature measurement data. Function to output the correction value of the control parameter.
- the temperature data creation program 704 and the heater temperature correction program 705 are stored in a storage medium such as a flexible disk, a compact disk, a magnetic optical disk (MO), and a memory card.
- the temperature data creation program 704 and the heater temperature correction program 705 are installed in the computer that is the control unit 9 and stored in the program storage unit 710.
- FIG. 16 is a view for explaining the carry-in angle of the wireless wafer Ww carried into the heating unit.
- the state where the notch 80 is oriented in the direction of loading into the heating unit in the wireless wafer Ww is defined as a loading angle of 0 degrees
- the wireless wafer Ww loaded into the first heating unit is defined as The carry-in angle is 90 degrees.
- the first heating unit is configured such that the cooling plate slides between the position where the wireless wafer Ww is accessed with respect to the delivery arm A1 or the main transfer mechanism A2 and the heating plate 34. Therefore, the notch 80 is oriented as shown in FIG.
- the wireless wafer Ww is placed on the heating plate 34 and heat treatment is performed.
- the wireless weno and Ww carried out from the first heating unit are transported to the second heating unit stored in the shelf unit U2 by the main transport mechanism A2, and the same processing is performed (Ste S5) in Figure 10.
- the wireless wafer Ww is transferred to the third heating unit stored in the shelf unit U3 by the main transfer mechanism A3, and the same processing is performed (step S6 in FIG. 10).
- the carry-in angles of the wireless wafer Ww carried into the second heating unit and the third heating unit are 270 degrees and 90 degrees, respectively.
- FIG. 17 is a characteristic diagram showing time-series data of temperature detection values of the heating plate by each temperature sensor.
- the first temperature sensor 70 By transporting the wireless wafer Ww, the first temperature sensor 70 is provided in each heating unit as shown in FIG. The temperature data of the heating area handled and the temperature data of the heating area handled by the second temperature sensor 71 are acquired.
- FIG. 18 is a diagram showing a table in which the carry-in angle of the wireless wafer Ww carried into each heating unit and the heater position of each temperature sensor are written.
- the heater heating control region of each heating plate 34 is considered in consideration of the carry-in angle of the wireless wafer Ww to the heating plate 34 of each heater.
- Which temperature sensor corresponds to the temperature data is determined using a table. That is, based on the carry-in angle of the wireless wafer Ww and the temperature data of the first temperature sensor 70 and the second temperature sensor 71, the temperature of the divided area of each heating plate 34 is obtained.
- FIG. 19 is a characteristic diagram showing time-series data of temperature detection values of the heaters.
- temperature data for each heating control region (divided region) that each heater is responsible for is obtained.
- the temperature data creation program 704 is similar to the control parameter correction unit 604 based on the temperature data shown in the figure and, for example, preset temperature data (this data is stored in a memory (not shown), for example).
- Power supply control data for each heater It has a function to adjust the input pattern of PID control and MV control, which are data, using a predetermined algorithm. Specifically, by executing the temperature data creation program 704, the temperature target value and time constant in PID control are adjusted, and the power supply level and supply time in MV control are adjusted. It is output from the controller 9 to the temperature controller associated with each heater (step S15 in FIG. 10).
- control unit 9 selects a recipe so as to restart the temperature measurement of the corrected heating unit, outputs a temperature measurement start command, and executes the temperature measurement recipe.
- control unit 9 performs temperature detection by the wireless wafer Ww until the average value and range of the in-plane temperature of the heating plate based on the temperature detection value are within the target temperature range and within the target in-plane temperature difference, Acquisition of temperature data of the heating plate 34, calculation of summary data, and calculation of offset values are automatically repeated.
- the heating area which each of the first temperature sensor 70 and the second temperature sensor 71 formed on the surface of the wireless wafer Ww takes is determined. That is, the correspondence between each temperature sensor formed on the surface of the wireless wafer Ww in each heating unit and each heater provided in the heating plate 34 can be understood. Therefore, the temperature control parameter of each heater can be adjusted based on the temperature data measured by each temperature sensor of each heating unit.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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EP05768853A EP1791166B1 (en) | 2004-08-11 | 2005-08-08 | Method for measuring heating plate temperature, substrate processing equipment, and computer program for measuring heating plate temperature |
US11/632,965 US7655886B2 (en) | 2004-08-11 | 2005-08-08 | Method of measuring a heating plate temperature, substrate processing device and computer-readable recording medium with computer program recorded thereon for measuring the heating plate temperature |
KR1020077005583A KR101052106B1 (ko) | 2004-08-11 | 2005-08-08 | 가열플레이트의 온도측정방법, 기판처리장치 및 가열플레이트의 온도측정용의 컴퓨터 프로그램을 저장한 기억 매체 |
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JP2004234765 | 2004-08-11 | ||
JP2004-234765 | 2004-08-11 | ||
JP2005-199673 | 2005-07-08 | ||
JP2005199673A JP4343151B2 (ja) | 2004-08-11 | 2005-07-08 | 加熱プレートの温度測定方法、基板処理装置及び加熱プレートの温度測定用のコンピュータプログラム |
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PCT/JP2005/014510 WO2006016550A1 (ja) | 2004-08-11 | 2005-08-08 | 加熱プレートの温度測定方法、基板処理装置及び加熱プレートの温度測定用のコンピュータプログラム |
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US (1) | US7655886B2 (ja) |
EP (1) | EP1791166B1 (ja) |
JP (1) | JP4343151B2 (ja) |
KR (1) | KR101052106B1 (ja) |
TW (1) | TWI295490B (ja) |
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JP4722231B2 (ja) * | 2011-01-11 | 2011-07-13 | 大日本スクリーン製造株式会社 | 基板処理装置 |
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JP5712975B2 (ja) | 2012-07-06 | 2015-05-07 | 東京エレクトロン株式会社 | 計測用基板、基板処理装置及び基板処理装置の運転方法 |
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JP2006080489A (ja) | 2006-03-23 |
JP4343151B2 (ja) | 2009-10-14 |
TW200614406A (en) | 2006-05-01 |
US20080142500A1 (en) | 2008-06-19 |
EP1791166A1 (en) | 2007-05-30 |
KR20070050954A (ko) | 2007-05-16 |
US7655886B2 (en) | 2010-02-02 |
TWI295490B (en) | 2008-04-01 |
KR101052106B1 (ko) | 2011-07-26 |
EP1791166A4 (en) | 2009-06-10 |
EP1791166B1 (en) | 2011-07-06 |
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