WO2006009090A1 - 記憶素子 - Google Patents
記憶素子 Download PDFInfo
- Publication number
- WO2006009090A1 WO2006009090A1 PCT/JP2005/013098 JP2005013098W WO2006009090A1 WO 2006009090 A1 WO2006009090 A1 WO 2006009090A1 JP 2005013098 W JP2005013098 W JP 2005013098W WO 2006009090 A1 WO2006009090 A1 WO 2006009090A1
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- WIPO (PCT)
- Prior art keywords
- memory
- resistance
- layer
- memory cell
- film
- Prior art date
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- 238000003860 storage Methods 0.000 title claims abstract description 8
- 230000015654 memory Effects 0.000 claims abstract description 162
- 230000008859 change Effects 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 66
- 150000002500 ions Chemical class 0.000 description 33
- 239000000463 material Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 27
- 239000010416 ion conductor Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000001459 lithography Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- -1 rare earth nitride Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 2
- 229940075613 gadolinium oxide Drugs 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
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- 238000007517 polishing process Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Definitions
- the present invention relates to a storage element in which a memory cell is configured using a resistance change element in which a resistance value of a recording film is reversibly changed by applying potentials having different polarities to two electrodes.
- DRAMs with high speed and high density are widely used as random access memory.
- DRAM has a higher manufacturing cost because the manufacturing process is more complex than the general logic circuit LSI and signal processing used in electronic equipment.
- DRAM is a volatile memory that loses its information when the power is turned off. Frequent refresh operation, that is, the written information (data) is read, amplified, and written again. It is necessary to perform an action.
- Fe RAM ferrroelectric memory
- MR AM magnetic memory element
- These memories can keep the written information for a long time without supplying power.
- the nonvolatile memory described above ensures characteristics as a memory element as the memory elements constituting each memory cell shrink. It becomes difficult to do.
- This memory element has a structure in which an ion conductor containing a certain metal is sandwiched between two electrodes.
- the metal contained in the ionic conductor in one of the two electrodes, when a voltage is applied between the two electrodes, the metal contained in the electrode becomes ionic conductive. Since it diffuses as ions in the body, this changes the electrical properties such as resistance and capacitance of the ion conductor.
- Patent Document 1 By utilizing this characteristic, it is possible to configure a memory device (see, for example, Patent Document 1 and Non-Patent Document 1).
- the ionic conductor is a glass material or a semiconductor material made of a solid solution of chalcogenide and metal, and more specifically, A s S, G e S, G e S e and A Material in which g, Cu and Zn are dissolved
- One of the two electrodes contains Ag, Cu, and Zn (see Patent Document 1 above).
- the other electrode is formed of tungsten, nickel, molybdenum, platinum, metal silicide, or the like that does not substantially dissolve in the material containing the ion conductor.
- a memory cell can be formed by connecting a memory element and a selection element such as a diode or a MOS transistor, and arranging the memory cell in an array.
- a conductive ion in the ion conductor is applied by applying a bias voltage higher than the threshold voltage to the two poles.
- Electrodeposition occurs when (ion of Ag, Cu, Zn, etc.) moves toward the negative electrode and reaches the negative electrode o Furthermore, this electrodeposition is, for example, dendritic ( Since the current path is formed by reaching the positive electrode after reaching the positive electrode, the resistance value of the ion conductor changes from a high resistance to a low resistance. As a result, it is possible to record information in the child «o
- a memory element having a configuration in which a barrier layer is inserted after the electrode and the ion conductor to limit the movement of the ion between the ion conductor and the electrode. ing.
- a barrier layer is inserted after the electrode and the ion conductor to limit the movement of the ion between the ion conductor and the electrode.
- electrons it is possible for electrons to conduct inside the barrier layer, it is preferable to use a material that restricts the movement of ions, such as titanium nitride, titanium tandastene, nickel oxide, or the like. It is supposed to be. And at the desired operating voltage, the barrier layer needs to be thin enough (3 nm or less) as electrons pass through the NOR layer.
- a memory element having a structure in which a barrier layer is formed in this way, when a recording voltage higher than the threshold voltage is applied, electrons are conducted in the barrier layer, and then electrodeposition proceeds. By forming a current path between the surface of the electrode and the other electrode, a change in electrical characteristics such as resistance occurs.
- a via hole is formed in a part of an insulating layer formed on one electrode (lower electrode) regardless of the presence of a noor layer, and an ion conductor is formed in the via hole.
- ⁇ Palia ⁇ Other One electrode (upper electrode) is formed.
- the memory element can be made relatively small (for example, 10 nm), and the insulation formed on one of the electrodes can be reduced.
- the layer allows the storage element to be isolated from other electrical components.
- an insulating layer is deposited on the lower electrode, and further, the insulating layer is formed by patterning and an etching process. A via hole reaching the lower electrode is formed, and then each layer from the ion conductor to the upper electrode is selectively or non-selectively deposited in the via hole.
- the ION conductor and the conductive layer formed on the insulating layer using CMP (Chemical Mechanical Polishing) and Z or etching technique are used. It is stated that the electrode film material may be removed.
- Non-Patent Document 2 a variable resistance nonvolatile memory using PCMO (PrCaMnO) as a recording film material has also been reported (see Non-Patent Document 2).
- the proposed cell structure has a PCMO film formed in a via hole patterned by an insulating film.
- the memory cells can be easily separated electrically and physically.
- the RIE method is ideally made by forming a constituent film element in a gas phase by reaction with an etching gas and removing it by etching. It is frequently used because there is no concern about a drop in yield.
- Patent Document 1 Special Table 2 0 0 2 — 5 3 6 8 4 0
- Non-Patent Document 1 Nikkei Electronics January 2000 No. 2 0 0 (Page 1 0 4)
- Non-Patent Document 2 Technical Digest, International Electron Devices Meeting (lEDM), 2002, p.
- each layer constituting the memory element is formed in the via hole, a method such as selective epitaxy using the orientation of the base electrode or a film growth by plating is used to selectively deposit in the via hole. It is necessary and normal film deposition methods (evaporation, sputtering, CVD method, etc.) cannot be used.
- the memory elements are made up of materials that are not experienced in the conventional semiconductor manufacturing process.
- each layer constituting the memory element should be formed by non-selective growth using a normal film deposition method. As a result, problems related to the deposition state such as non-uniformity of the film in the via hole (eg X. non-uniformity of film thickness) may occur, or C after film formation may occur.
- the above-mentioned new type of memory element has a problem that a very long development period is required to improve the manufacturing yield.
- lithographic technology using deep ultraviolet light, extreme ultraviolet light, electron beams, etc. as a light source is used as a method for processing fine shapes in semiconductor manufacturing processes and the like.
- the surface to be exposed is, for example, the surface of a semiconductor substrate such as a silicon substrate
- the surface of the substrate is polished with high accuracy, and the height of the exposed surface has sufficient uniformity. For this reason, for example, patterning of the gate of an M S transistor can be performed with a very high resolution and high accuracy.
- the resolution of lithography in the wiring process is inferior to the resolution of the gate processing process of the MOS transistor.
- ⁇ Therefore, using the selection element such as the MOS transistor and the resistance changer, The new type of memory elements that make up the memory is equivalent to the same type of light source, even when using an exposure source of the same wavelength, compared to a flash memory that only uses S transistor elements to form a memory cell. ⁇ O to get the resolution of sography
- the present invention is easy and
- a memory element having a configuration capable of high density is provided.
- the storage element of the present invention has a recording layer between two electrodes, and the resistance value of the recording layer changes irreversibly by applying potentials having different polarities to these two electrodes.
- Each memory cell is configured by the resistance change element, and at least some of the layers constituting the recording layer of the resistance change element are formed in common by the same layer in a plurality of adjacent memory senses. It is what.
- the recording layer is provided between the two electrodes, and the recording layer is reversibly applied by applying potentials having different polarities to the two electrodes.
- Each memory cell is configured by a resistance change element that changes its resistance value. Therefore, the resistance value of this resistance change element can be reversibly changed between a high resistance and a low resistance.
- the resistance state of the variable resistance element can be stored in the memory cell as information.
- the layers constituting the recording layer of the resistance change element are formed more commonly in a plurality of adjacent memory cells. When manufacturing f>W> elements, the layer formed in common does not require local recording film deposition or patterning for each memory cell. It is relaxed and can be easily patterned.
- the resistance change element can be formed above the memory element of the present invention.
- the kr: for manufacturing the memory element is formed in common, and the degree of patterning is eased. Since it becomes possible to perform the tagging, the manufacturing yield can be greatly improved.
- the yield of the ⁇ element can be easily manufactured ⁇ 5, so that the density of the memory cell can be increased. This makes it possible to increase the memory capacity of the memory and to reduce the size of the memory.
- the factors that determine the density of memory cells and the manufacturing yield of memory elements are not related to the structure of resistance change elements, and are used in conventional semiconductor mass production technologies. '' Since it is determined by the etching process and polishing process, the conventional technology can be used easily.
- the resistance change element when the resistance change element is formed above the wiring for applying the operating voltage to the resistance change element, a material that causes a change in the film structure at high temperatures can also be used. Since it can be used as a variable element, the degree of freedom in selecting the material of the variable resistance element can be increased.
- FIG. 1 is a schematic configuration diagram (cross-sectional view) of a memory element according to an embodiment of the present invention.
- FIG. 2 is a schematic plan view of the device shown in FIG.
- FIG. 3 is an equivalent circuit diagram of the memory element of FIG.
- FIG. 4 is a schematic configuration diagram (schematic plan view) of a memory element according to another embodiment of the present invention.
- FIG. 5 is a schematic configuration diagram (schematic plan view) of a memory element according to another embodiment of the present invention.
- FIG. 6 is a cross-sectional view of the memory element of FIG.
- Fig. 7 is a cross-sectional view showing a modified configuration of Fig. 6 o
- Fig. 8 is a diagram for explaining malfunctions in adjacent memory cells. The best mode for carrying out the invention
- FIG. 1 shows a schematic configuration diagram (cross-sectional view) of a memory element.
- variable resistance elements 10 constituting the memory sense are arranged in the form of a large array up to this self-inductor f.
- the resistance change element 10 is composed of a quotient resistance film 2 and an ion source layer 3 sandwiched between a lower electrode 1 and an upper electrode 4.
- the high resistance film 2 and the ion source layer which is formed by the sd IS layer 3 and can record information on the resistance change element 10 of each memory cell, as will be described later.
- 3 includes one or more elements selected from A g, C u, and Z n (gold even elements) and one or more elements selected from S, Se, and Te (power rucogenides). Element).
- this metal element (A g, c u, Z n) becomes an ion source.
- the high resistance film 2 is configured using a material having a higher resistivity than the ion source layer 3, for example, an insulator or a semiconductor.
- materials such as silicon oxide, silicon nitride, rare earth oxide film, rare earth nitride film, amorphous silicon, amorphous germanium, and amorphous chalcogenide should be used. Is possible.
- a Cu Te G e G d film can be used as the ion source layer 3 described above.
- the resistivity of this Cu Te G e G d film varies depending on the composition. However, since Cu, Te and G d are metallic elements, reducing the resistance is at least chalcogenide. As S or Or it is easier than using S e.
- G e Te has a very low resistivity and is about l X 10 4 Q cm.
- G e S e is about l X l 0 1 3 Q cm and G e ST e is about 1 X l C ⁇ i Q cm ("functional material" 1 9 9 0 May issue p 7 6).
- the resistance can be lowered by adding a metal such as Cu or Gd to a material containing GeTe as a base material or a material containing Te. You can.
- the resistance value of the Cu Te G e Gd film having a thickness of 20 nm and a cell area of 0.4 / zm 2 can be set to about 100 ⁇ or less.
- the resistance value of the gadolinium oxide film used for the high resistance film 2 is high, and even with a relatively thin film thickness, it can easily be over l OO k Q, and even 1 M ⁇ . is there.
- each variable resistance element 10 is formed above the MOS transistor Tr formed on the semiconductor substrate 11.
- the MOS transistor Tr is composed of a source / drain region 13 formed in a region separated by an element isolation layer 12 in the semiconductor substrate 11, and a gate electrode 14.
- a side wall insulating layer is formed on the wall surface of the gate electrode 14.
- the gate electrode 14 also serves as a node line WL that is one address wiring of the memory element.
- the other side of the source Z drain region 1 3 of the MO S transistor Tr is It is connected to the metal wiring layer 16 through the plug layer 15.
- This metal wiring layer 16 is connected to a bit line BL (see FIG. 2) which is the other address wiring of the memory element.
- each resistance change element 10 constituting each memory cell is divided into the high resistance film 2, the ion source layer 3, and each layer of the upper electrode 4 throughout the memory cell array part (memory part). Is shared.
- each resistance variable 10 is composed of the high resistance film 2, ion source layer 3, and upper electrode 4 in the same layer.
- the upper electrode 4 formed in common serves as a plate electrode P L described later.
- the lower electrode 1 is formed individually for each memory cell, and each memory cell is electrically isolated.
- the resistance change element 10 of each memory cell is defined at the position corresponding to each lower electrode 1 by the lower electrode 1 formed individually for each memory cell.
- the lower electrode 1 is connected to a corresponding MOS transistor T r for selection.
- FIG. 2 A schematic plan view of the memory element of this embodiment is shown in FIG. 2, and an equivalent circuit diagram is shown in FIG.
- a pre-primary electrode P L is formed over the entire memory cell / rarely portion (memory portion). This plate electrode P L is indicated by a bold line in the equivalent circuit diagram of FIG.
- one end of the resistance change resistor 10 is used for selection.
- the other of the source / drain of the MOS transistor Tr is the bit line B L (BL 0, BL 1,..., BL m) and the gate of the MOS transistor Tr is connected to the word line WL (WL 0, WL 1,.
- the other end of the resistance change element 10 is connected to a plate electrode PL formed in common over the entire memory cell array. Through this plate electrode P L, the same potential is applied to each variable resistance element 10.
- the ion source contained in the ion source layer 3 moves in the direction of the lower electrode 1 as an ion.
- these ions are implanted into the high resistance film 2 or deposited on the surface of the high resistance film 2, the interface state of the high resistance film 2 changes, and the resistance value of the resistance change element 10 is in the low resistance state. Transition to. As a result, information can be recorded in the resistance change element 10 of the selected memory cell.
- the change in the resistance value of the resistance change element 10 is mainly caused by the change in the resistance value of the high resistance film 2.
- the thickness of the i3 ⁇ 4 resistor J7L film 2 very thin, for example, about several nm, it becomes possible to suppress interference between adjacent memory cells.
- the resistance film 2 needs to have at least a difference in resistance value between the high resistance state and the low resistance state so that a BJE protrusion signal can be sufficiently secured. For example, a difference of 30% or more is necessary.
- a memory cell is selected by the MOS transistor Tr, a predetermined voltage or current is applied to the selected memory sensor, and the resistance change element 1
- Different currents or voltages depending on the resistance state of 0 are detected through a sense amplifier connected to the end of the bit line BL or the plate electrode PL.
- the voltage or current applied to the selected memory cell is set to be smaller than the voltage or current threshold at which the resistance value of the resistance change element 10 transitions.
- the memory element of this embodiment can be manufactured, for example, as follows.
- a MOS transistor Tr is formed on the semiconductor substrate 1 1. Then, an insulating layer is formed covering the surface.
- the inside of the via hole is filled with an electrode material such as W, W N, ⁇ i w or the like by a method such as C V D method or plating.
- the surface is flattened by the CMP method or the like.
- the plug layer 15 Metal wiring layer 1 6 ⁇ plug layer 1 7 ⁇ lower electrode 1 can be formed, and lower electrode 1 can be patterned for each memory cell. Subsequently, an insulator film or a semiconductor film to be the high resistance film 2 is deposited on the entire surface of the lower electrode 1 formed separately for each memory cell.
- the surface of the lower electrode 1 is ideally formed to the same height as the surrounding insulation layer, has to desirable that it have been flattened 0
- the high resistance film 2 is a 4 nm thick gadolinium oxide film.
- This Gad V-oxide film is formed by depositing a metal Ga-V oxide film, followed by thermal oxidation or plasma oxidation in an oxygen-containing plasma atmosphere. It is out.
- a rare earth oxide film, a rare earth nitride film, a silicon nitride film, or a silicon oxide film is deposited as the high resistance film 2.
- These films can be formed by gastric reaction, sex sputtering, CVD method or the like.
- the ion source layer 3 is entirely and sequentially shelled on the high resistance film 2.
- a 20 nm thick Cu Te G e G d This Cu Te G e G d is a material with low resistance, so it can be used as the upper electrode 4 as it is, but the upper electrode 4 has a further resistance. It is desirable to use low materials.
- the upper electrode 4 is sequentially deposited on the entire surface of the ion source layer 3.
- a metal material having a lower resistance than the material of the ion source layer 3 silicic acid, low resistance nitride such as ⁇ a N, W n or the like is deposited. .
- the high resistance film 2, the ion source layer 3, and the upper electrode 4 formed on the entire surface are patterned so as to remain over the entire memory cell array portion (memory portion).
- the layers constituting the resistance change element are formed in common in the adjacent memory cells as in the present embodiment, the adjacent memory cells operate correctly independently of each other. In addition, it is necessary to form each resistance change element.
- the thickness h of the recording layer 4 2 is equal to or more than the distance s between the lower electrodes 4 1 of the adjacent memory cells (h> s)
- the lower part of the memory cell adjacent to the right side When viewed from the electrode 41, the current path 31 formed in the memory cell on the left side is closer to the distance than the common upper electrode 43. For this reason, when an information storage operation is performed on this memory cell, a current path 32 connected from the lower electrode 41 to the current path 31 of the adjacent memory cell is formed as shown in FIG. It will be.
- the state in which the current path 32 in FIG. 8 is formed is different from the state in which the current path reaching the upper common electrode 43 is formed, which causes problems not only in the erase operation but also in the recording operation. Therefore, the recording operation conditions (for example, operating voltage) are affected, and the recording operation becomes unstable.
- the recording operation conditions for example, operating voltage
- the thickness of the recording layer (the part where the resistance changes) 42 is sufficiently thin.
- the film thickness of the portion where the resistance changes (ion conductor layer) is 35 nm.
- HI and S l Preferably, HI 2 S 1, and more preferably H 1 ⁇ 4 S 1.
- these conditions are applied to adjacent cells even when V w> 2 V th or V w> 4 V th between the recording voltage V w and the threshold voltage V th at which the current path is formed. This is a condition for forming a current path in a range that does not affect.
- the resistance value R 1 of the ion source layer 3 is the resistance change in the erased state. It is desirable that the resistance value R e is less than the resistance value R e (R l ⁇ R e), and more desirably R 1 and 4 Re.
- the high resistance film 2 of the resistance change element 10, the ion source layer 3, and the upper electrode 4 are formed in common over the entire memory cell array.
- the entire portion of the memory cell array is processed so as to remain. Because it is good, it is not necessary to use the most advanced ultra-fine processing technology.
- each layer 2, 3, 4 This eliminates the need for the ground surface of each layer 2, 3, 4 to be a very flat surface such as the surface of a semiconductor substrate, and makes it easier for each layer 2, 3, 4 It is possible to perform the turning with the addition of the following:
- the B memory device can be easily manufactured with a good yield.
- the yield can be improved easily. As a result, it is possible to increase the number of letters and downsize the memory.
- the resistance change is higher than the node line WL (gate 14) and the bit line BL (metal wiring layer 16) serving as address wiring. Since there is the element 10, the high temperature (for example, about 35 ° C.) manufacturing process necessary for forming the insulating layer between the wiring layers is performed on each layer 2, 3, It is not necessary to do this after depositing 4.
- Figure 4 shows a schematic plan view.
- the plate electrode P L is commonly formed in the memo V cell adjacent in the direction parallel to the bit line BL.
- the cross-sectional view of the memory cell in the left-right direction in the drawing has the configuration shown in FIG. 1 as in the previous embodiment.
- the resistance change element 10 of the memory cell adjacent in the direction parallel to the bit line BL is connected to the high resistance film 2 ⁇ ion source 3 ⁇ upper electrode.
- bit line B bit line
- the pitch of memory cells such as semiconductor memory is different in the row direction and the column direction, and even in the memory element using the resistance change element, the pitch of the memory cell is different in the row direction and the column direction. Can be considered.
- the configuration of the present embodiment is particularly effective when the pitch of the memory cell in the direction parallel to the bit line BL is smaller than the pitch of the memory cell in the direction perpendicular to the bit line BL. Is preferred.
- FIG. 1 a schematic configuration diagram (schematic plan view) of a memory element is shown in FIG. 1
- the plate electrode P L is formed in common in a total of four memory cells, two adjacent in the vertical and horizontal directions.
- Figure 6 shows a cross-sectional view of the memory cell in the horizontal direction. That is, this embodiment has a configuration in which the high resistance film 2, the ion source layer 3, and the upper electrode 4 are formed in common in each of the resistance change elements 10 of four memory cells vertically and horizontally. It is.
- a wiring 5 extending in the left-right direction in the figure is formed on the upper electrode 4 which is the plate electrode PL.
- the same potential can be applied to each plate electrode P L through the wiring 5.
- High resistance film 2 ⁇ Ion source layer 3 ⁇ Upper electrode 4 are formed in common and are layered, so that these layers 2, 3, 4 are patterned for each memory cell. In comparison, patterning accuracy in both vertical and horizontal directions is reduced.
- the configuration shown in FIG. 6 can be modified so that only the high-resistance film 2 is patterned over a wider range (for example, the entire memory cell array). is there.
- the lower electrode may be formed in common in adjacent memory cells, and the upper electrode may be formed separately for each memory cell.
- At least one of the two electrodes sandwiching the recording layer of the resistance change element may be formed separately for each memory cell.
- the range in which adjacent memory cell layers are formed in common is not limited to the configuration shown in each of the above-described embodiments, and may be other configurations.
- the layer formed in common in adjacent memory cells is not limited to the configuration shown in each of the above-described embodiments.
- the high resistance film is formed in common.
- Various configurations are possible, such as a configuration in which the high resistance film and the ion source layer are formed in common and the upper electrode is formed independently.
- a single recording layer that also functions as these two layers may be formed.
- the stacking order of the layers constituting the variable resistance element can be reversed from the above-described embodiments.
- At least a plurality of memory cells adjacent in one direction in the vertical and horizontal directions constitute at least the recording layer of the resistance change element. If some layers are formed in common, the processing accuracy can be relaxed and manufacturing can be easily performed with better yield than a configuration in which each memory cell is individually formed. Become.
- the present invention is not limited to the above-described embodiment, and various other configurations can be employed without departing from the gist of the present invention.
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Abstract
Description
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Priority Applications (3)
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US11/632,594 US7560724B2 (en) | 2004-07-22 | 2005-07-08 | Storage device with reversible resistance change elements |
EP05765813A EP1796167B1 (en) | 2004-07-22 | 2005-07-08 | Storage element |
KR1020077001380A KR101148456B1 (ko) | 2004-07-22 | 2005-07-08 | 기억 소자 및 기억 소자의 동작 방법 |
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JP2004-214603 | 2004-07-22 | ||
JP2004214603A JP4830275B2 (ja) | 2004-07-22 | 2004-07-22 | 記憶素子 |
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US (1) | US7560724B2 (ja) |
EP (1) | EP1796167B1 (ja) |
JP (1) | JP4830275B2 (ja) |
KR (1) | KR101148456B1 (ja) |
CN (1) | CN100502011C (ja) |
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Also Published As
Publication number | Publication date |
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CN100502011C (zh) | 2009-06-17 |
EP1796167A4 (en) | 2010-12-22 |
EP1796167B1 (en) | 2012-08-29 |
JP2006040946A (ja) | 2006-02-09 |
KR20070039551A (ko) | 2007-04-12 |
EP1796167A1 (en) | 2007-06-13 |
US20080083918A1 (en) | 2008-04-10 |
CN1989619A (zh) | 2007-06-27 |
TW200618261A (en) | 2006-06-01 |
US7560724B2 (en) | 2009-07-14 |
KR101148456B1 (ko) | 2012-05-23 |
JP4830275B2 (ja) | 2011-12-07 |
TWI319908B (en) | 2010-01-21 |
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