WO2006001205A1 - 蒸発装置、蒸着装置および蒸着装置における蒸発装置の切替方法 - Google Patents
蒸発装置、蒸着装置および蒸着装置における蒸発装置の切替方法 Download PDFInfo
- Publication number
- WO2006001205A1 WO2006001205A1 PCT/JP2005/010948 JP2005010948W WO2006001205A1 WO 2006001205 A1 WO2006001205 A1 WO 2006001205A1 JP 2005010948 W JP2005010948 W JP 2005010948W WO 2006001205 A1 WO2006001205 A1 WO 2006001205A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- evaporation
- container
- vapor deposition
- storage container
- heating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
Definitions
- the present invention relates to a vapor deposition apparatus for vapor-depositing a predetermined material on a substrate disposed in a vacuum vessel, an evaporation apparatus for evaporating the predetermined material, and a method for switching an evaporation apparatus used in the vapor deposition apparatus.
- a vapor deposition apparatus that forms a thin film by depositing a predetermined material on the surface of a substrate placed under vacuum, the material is evaporated by heating an evaporation source of the material placed under vacuum. A thin film is formed by adhering the evaporated evaporation material to the surface of a substrate which is also placed under a vacuum.
- a thin film is formed using an evaporation material having one evaporation chamber force.
- an evaporation source containing the material is placed in the other evaporation chamber and heated, and the evaporation chamber is kept in a vacuum state, and one evaporation is performed during the replacement.
- the vacuum valve on the other evaporation chamber side was opened, and the evaporating material was introduced into the vacuum vessel, so that no loss of work time during material replacement occurred.
- two evaporation chambers are connected to one vacuum vessel, that is, an evaporation material discharge pipe.
- one vacuum vessel that is, an evaporation material discharge pipe.
- the material evaporation source
- the material runs out in the middle of the film formation, and the evaporation material from the other evaporation chamber is led to vapor deposition.
- the quality of the thin film formed on the substrate surface varies due to the difference between the previous deposition conditions and the current deposition conditions.
- traps that can be partially recovered are provided, but it is not the first time that materials that have been heated and cooled can be reused for the first time because they are not necessarily of the same quality as materials that are heated and evaporated.
- the materials used may be limited, and additional equipment will be added, such as the trap requiring a heating device.
- the present invention uses an evaporation apparatus that can prevent a decrease in the efficiency of use of the material to be deposited, and changes the deposition conditions when the evaporation material is introduced from a plurality of locations to the deposition chamber. It is an object of the present invention to provide a vapor deposition apparatus that does not cause the vapor deposition, and a method for switching an evaporation apparatus in the vapor deposition apparatus. Means for solving the problem
- an evaporation apparatus is an evaporation apparatus that evaporates a predetermined material under a predetermined vacuum degree, and is an evaporation material that is connected to an exhaust device and evaporated at the top.
- An evaporation container provided with a material discharge hole capable of discharging a material, and a mounting table provided in the evaporation container so as to be movable up and down by a lifting device and capable of mounting a material storage container storing the material.
- a cylinder that prevents the evaporation material from being released into the evaporation container by covering the outer periphery of the evaporation container around the material discharge hole when the material storage container is lifted through the mounting table.
- a partition wall member is provided,
- a heating device for heating the material container is provided on the mounting table and the partition member,
- a contact portion is provided on the mounting table side that can contact the lower end of the partition wall member and prevent the evaporation material from being discharged in the partition wall member when the mounting table is raised by the lifting device. Is.
- the vapor deposition apparatus of the present invention includes at least two evaporation apparatuses according to the above invention, one vapor deposition container for vaporizing an evaporation material on a vapor deposition member under a predetermined degree of vacuum, and the vapor deposition apparatus.
- a vapor deposition apparatus provided with a material transfer passage provided between the container and a material discharge hole of each of the evaporation apparatuses,
- One end side of the material transfer passage is connected to the vapor deposition container side, and the other end side is branched and connected to the material discharge holes of the respective evaporators,
- an on-off valve is arranged in the middle of each branched material transfer passage.
- the evaporation apparatus switching method in the evaporation apparatus of the present invention performs evaporation by supplying an evaporation material to one evaporation container using at least two evaporation apparatuses.
- a preheating step in which the material storage container of the other evaporator is raised into the partition member and heated to a predetermined temperature lower than the evaporation temperature of the material by the heating device before the material of one evaporator becomes insufficient. , The material storage container heated to a predetermined temperature is also lowered, and the impurity discharging step of discharging the vaporized impurities in the material storage container to the outside by the exhaust device, and again after the impurities are discharged, A main heating step in which the material container is raised and heated to the evaporation temperature of the material;
- the inside of the evaporation container is kept clean by the exhaust apparatus, and the material storage container is raised in the partition member communicated with the material discharge hole and heated by the heating apparatus. Therefore, most of the evaporating material can be guided to the material discharge hole, and hence the discharge of the evaporating material by the exhaust device can be minimized, so that the material can be used effectively. That is, it is possible to prevent the use efficiency of the material from being lowered.
- vapor deposition in the material transfer passage for guiding the vaporized material from each vaporizer to the vapor deposition container Since the connection portion on the chamber side is made one place, the deposition conditions do not change, and therefore, it is possible to prevent the quality of the thin film formed on the deposition target member from being varied.
- the material storage container and impurities contained in the material are vaporized, and the material storage container is lowered and lowered from the partition wall member to exhaust the exhaust device. Therefore, when switching between at least two evaporators used for continuous vapor deposition, the quality of the thin film formed on the vapor deposition member can be prevented from being deteriorated. it can.
- FIG. 1 is a cross-sectional view showing a schematic configuration of a vapor deposition apparatus according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an essential part of an evaporation apparatus in the vapor deposition apparatus.
- FIG. 3 is a cross-sectional view for explaining a vapor deposition operation in the vapor deposition apparatus.
- FIG. 4 A cross-sectional view illustrating the vapor deposition operation in the vapor deposition apparatus.
- FIG. 5 is a cross-sectional view for explaining a vapor deposition operation in the vapor deposition apparatus.
- FIG. 6 is a cross-sectional view for explaining a vapor deposition operation in the vapor deposition apparatus.
- FIG. 7 is a cross-sectional view of the principal part showing a modification of the evaporation apparatus in the vapor deposition apparatus.
- this vapor deposition apparatus is roughly divided into a glass substrate 1 as a member to be vapor-deposited and inserted in a horizontal direction so that the vapor deposition surface is downward and held by a holder 2.
- Vapor deposition container constructed (the inside of the container is called the vapor deposition chamber 3a, and although not shown, a glass substrate loading / unloading opening is provided in the side wall of the container, and other exhaust such as a vacuum pump is provided.
- a predetermined material in the case of an organic EL screen, an organic material is used
- a predetermined material Is called the evaporation material (A)
- the evaporated material is the evaporation material (B) t ⁇ ⁇ )
- Two evaporation devices 4 (4A, 4B), each of these evaporation devices 4 and the evaporation container 3
- a material transfer pipe 5 which is a material transfer passage for transferring the evaporated material to the vapor deposition chamber 3a. It consists of
- Each of the evaporation devices 4 is connected to an evaporation container 11 having an evaporation chamber 11a therein, and a wall portion of the evaporation container 11, and the evaporation chamber 11a has a predetermined degree of vacuum (for example, l X 10 " 4 Pa)) and a vacuum pump 12 as an exhaust device for maintaining the degree of vacuum, and an elevating cylinder device 13 as an elevating device in the evaporating chamber 11a.
- a cylindrical material storage container (also referred to as a crucible) 14 that stores a vapor deposition material and has an open upper surface can be mounted on a disk-shaped mounting table 15.
- a loading / unloading opening 1lb for loading / unloading the material storage container 14 and an opening / closing door 16 for opening / closing the loading / unloading opening 1lb are provided.
- each of the evaporation containers 11 is a material for releasing the evaporation material.
- a discharge hole 17 is formed, and in the middle of the material discharge hole 17, a dollar valve 18 is provided as an open / close valve capable of opening / closing the discharge hole 17 or adjusting its opening area.
- the lower surface of the material discharge hole 17 of the upper wall portion 11c of the evaporation container 11 covers the periphery of the material storage container 14 raised through the mounting table 15.
- a cylindrical partition wall member 19 is provided to hang down as much as possible to suppress (suppress) the evaporation material released from the material storage container 14 from moving to the evaporation chamber 11a side.
- An annular contact portion (contact portion) 15a is formed such that at least the peripheral edge portion of the upper surface thereof contacts the lower end portion of the partition wall member 19 when being raised, and no gap is formed. In terms of dimensions, the gap between the partition member 19 and the material storage container 14 is made as small as possible.
- a heating device 20 such as an electric heater, is provided inside the mounting table 15 and the outer peripheral surface of the partition member 19. 2 1 is provided.
- the material transfer pipe 5 is for connecting two evaporators 4 to one vapor deposition vessel 3, and its upper end 5a is provided at one location on the bottom wall 3b of the vapor deposition vessel 3.
- the lower end of the branch is branched into two to form a Y-shaped passage, and the lower ends 5b and 5c of the branches are connected to the material discharge holes 17 of the respective evaporation containers 11 ( Communicating)
- a heating device such as an electric heater, and the evaporation temperature is maintained.
- a material transfer passage is configured by the material transfer pipe 5 and the material discharge hole 17 provided on the evaporation container 11 side.
- the vacuum pump 12 is operated to perform a predetermined vacuum. Maintain the degree of vacuum. While vapor deposition is performed, for example, the evaporation device 4A The vacuum pump 12 is continuously operated in order to discharge air that enters from the connection parts in each component device, and impurities (impure gas components) released from the component devices themselves.
- the heating container 20, 21 is used to hold the material storage container 14 in a predetermined state.
- the needle valve 18 is opened, the evaporated evaporation material (B) is led from the material discharge hole 17 to the vapor deposition chamber 3a of the vapor deposition container 3 through the material transfer pipe 5, and adheres to the surface of the glass substrate 1. A thin film is formed.
- the material transfer passage is heated so that the evaporation material does not adhere to the surface.
- preheating is performed in the other evaporation device 4B, and impurities such as moisture (as gas components) are discharged, followed by heating at the original evaporation temperature (hereinafter referred to as main heating).
- the evaporation temperature the temperature in the main heating
- the preheating temperature which is the temperature at which the material does not evaporate
- a lower temperature for example, 150 ° C. It can be arbitrarily set within a range of several degrees to several ten degrees lower than the main heating.
- the transition time until evaporation can be shortened.
- the material storage placed on the mounting table 15 of the other evaporation device 4B is stored.
- the container 14 is raised into the partition member 19 by the lifting cylinder device 13 and is lower than the evaporation temperature of the vapor deposition material by the heating devices 20 and 21 provided on the outer periphery of the mounting table 15 and the partition member 19. Heated to a predetermined temperature. Naturally, even during this preheating, the vacuum pump 12 exhausts air (preheating step).
- impurities such as moisture existing in the partition wall member 19 are discharged to the outside by the vacuum pump 12 through the evaporation chamber 1 la (impurity discharging step).
- the mounting table 15 When the impurities are discharged, as shown in FIG. 5, the mounting table 15 is raised again to raise (move) the material storage container 14 to the heating position in the partition wall member 19. At this time, since the annular contact portion 15a provided on the mounting table 15 side contacts the lower end portion of the partition wall member 19, the evaporated material (B) evaporated in the partition wall member 19 is drawn out and discharged to the outside. None happen. In other words, since the vacuum pump 12 that is always operated to discharge impurities is prevented from discharging the evaporated material to the outside, it is possible to prevent the use efficiency of the vapor deposition material from decreasing. Monkey.
- the material storage container 14 is heated to the evaporation temperature by the heating devices 20 and 21, and evaporation is performed.
- the main heating step as shown in FIG. 6, when the one dollar valve 18 provided in one evaporator 4A is closed and the other one dollar valve 18 provided in the other evaporator 4B is opened,
- the evaporation material (B) evaporated in the other evaporation device 4B is introduced into the vapor deposition chamber 3a through the material transfer pipe 5 and is subsequently attached to the glass substrate 1.
- the material storage container 14 of one evaporator 4A is lowered, the door 16 is opened and taken out, and replaced with a new one.
- the main heating in the other evaporator 4B can be shortened to several minutes by starting the material usage status of the evaporator 4A at an appropriate time.
- this switching method is a method of switching an evaporation device to be used when vapor deposition is performed by supplying an evaporation material to one evaporation container using at least two evaporation devices.
- An impurity discharging step of lowering the material storage container heated to a predetermined temperature from the partition member and discharging impurities evaporated in the material storage container to the outside with a vacuum pump, and again after the impurities are discharged,
- a material transfer passage switching step for closing the needle valve provided in the middle of the material discharge hole and opening the one-dollar valve provided in the middle of the material discharge hole of the other e
- the two evaporation devices 4 are connected to the vapor deposition vessel 3 via the material transfer pipe 5, and the evaporation device 4 used for vapor deposition is switched by opening and closing the needle valve 18. Since vapor deposition can be performed continuously and there is only one supply point (introduction point) to the vapor deposition chamber 3a, for example, two vaporizers are connected to vapor deposition containers using separate material transfer pipes. Compared to the one (with different supply locations), the deposition conditions do not change when the evaporation apparatus is switched, so that the quality of the thin film formed on the glass substrate 1 can be prevented from varying.
- the material storage container 14 is raised into the partition wall member 19 and is almost sealed by the mounting table 15, so that the component equipment system of the evaporator 4 Even when the vacuum pump 12 is driven to discharge intruding air, impurities, etc., it is possible to prevent (suppress) the evaporation material discharged from the material storage container 14 from being discharged to the outside. Therefore, it is possible to prevent the use efficiency of the evaporation material from being lowered.
- An annular projecting portion (another example of the position restricting portion) 15b is provided so that it can be accurately moved (in the plan) to the inside position of the partition member 19 of the abutment portion 15a. It may be formed. Also in this case, the gap between the partition member 19 and the material storage container 14 is made as small as possible.
- an opening / closing valve such as a one-dollar valve may be further provided at the branch lower end portions 5b, 5c of the material transfer pipe 5.
- the present invention is provided with a plurality of evaporation devices, and is provided in the material transfer passage when the evaporation material evaporated by these evaporation devices is led continuously or by changing the type thereof to the vapor deposition chamber.
- the open / close valve By operating the open / close valve, it is possible to deposit the evaporation material without waste and without changing the deposition conditions, so that it is optimal for use when, for example, the organic EL material is deposited on the substrate.
- it can be effectively used for vapor deposition of various vapor deposition materials.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067022161A KR101175165B1 (ko) | 2004-06-28 | 2006-10-25 | 증발장치, 증착장치 및 증착장치에 있어서의 증발장치의전환방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-189282 | 2004-06-28 | ||
JP2004189282A JP4570403B2 (ja) | 2004-06-28 | 2004-06-28 | 蒸発装置、蒸着装置および蒸着装置における蒸発装置の切替方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006001205A1 true WO2006001205A1 (ja) | 2006-01-05 |
Family
ID=35776668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/010948 WO2006001205A1 (ja) | 2004-06-28 | 2005-06-15 | 蒸発装置、蒸着装置および蒸着装置における蒸発装置の切替方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4570403B2 (ja) |
KR (1) | KR101175165B1 (ja) |
CN (1) | CN100558929C (ja) |
TW (1) | TWI398535B (ja) |
WO (1) | WO2006001205A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009242892A (ja) * | 2008-03-31 | 2009-10-22 | Hoya Corp | レンズ製造方法、眼鏡用レンズ製造方法及び蒸着装置 |
JP2013189713A (ja) * | 2008-04-22 | 2013-09-26 | Picosun Oy | 堆積反応炉のための装置および方法 |
FR3018082A1 (fr) * | 2014-03-03 | 2015-09-04 | Riber | Procede de rechargement d'une cellule d'evaporation |
EP2937443A1 (fr) * | 2014-04-24 | 2015-10-28 | Riber | Cellule d'évaporation |
CN112553691A (zh) * | 2020-12-02 | 2021-03-26 | 中电化合物半导体有限公司 | 碳化硅晶体生长方法及生长装置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5036264B2 (ja) * | 2006-09-19 | 2012-09-26 | 日立造船株式会社 | 真空蒸着装置 |
TWI353389B (en) * | 2007-02-09 | 2011-12-01 | Au Optronics Corp | Evaporation coater and evaporation source replacem |
KR101084234B1 (ko) | 2009-11-30 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 증착원, 이를 구비하는 증착 장치 및 박막 형성 방법 |
DE102010017895A1 (de) * | 2010-04-21 | 2011-10-27 | Ald Vacuum Technologies Gmbh | Vorrichtung zum Beschichten von Substraten nach dem EB/PVD-Verfahren |
CN103380227B (zh) * | 2011-03-15 | 2015-05-20 | 夏普株式会社 | 蒸镀颗粒射出装置和蒸镀装置 |
TW201321535A (zh) * | 2011-07-05 | 2013-06-01 | Tokyo Electron Ltd | 成膜裝置 |
JP5405549B2 (ja) * | 2011-10-20 | 2014-02-05 | 株式会社日本製鋼所 | 真空成膜方法および真空成膜装置 |
JP6021377B2 (ja) * | 2012-03-28 | 2016-11-09 | 日立造船株式会社 | 真空蒸着装置および真空蒸着装置におけるるつぼ交換方法 |
JP6222929B2 (ja) * | 2013-01-15 | 2017-11-01 | 日立造船株式会社 | 真空蒸着装置 |
CN105793464B (zh) * | 2013-11-05 | 2018-01-02 | 塔塔钢铁荷兰科技有限责任公司 | 用于控制蒸发器装置中的液体金属的组成的方法和设备 |
JP6241903B2 (ja) * | 2014-03-11 | 2017-12-06 | 株式会社Joled | 蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法 |
JP6302786B2 (ja) * | 2014-08-01 | 2018-03-28 | シャープ株式会社 | 蒸着装置、蒸着方法、及び有機el素子の製造方法 |
JP6445959B2 (ja) * | 2015-12-16 | 2018-12-26 | 株式会社オプトラン | 成膜装置および成膜方法 |
KR102561591B1 (ko) * | 2018-07-02 | 2023-08-02 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착 방법 |
CN109321884A (zh) * | 2018-10-17 | 2019-02-12 | 武汉华星光电半导体显示技术有限公司 | 蒸镀装置 |
EP3922762A4 (en) | 2020-04-14 | 2022-01-05 | Meishan Boya Advanced Materials Co., Ltd. | METHODS AND DEVICES FOR CRYSTAL GROWING |
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JPH09279332A (ja) * | 1996-04-15 | 1997-10-28 | Ulvac Japan Ltd | 有機化合物モノマーの精製方法 |
JPH11222668A (ja) * | 1998-02-06 | 1999-08-17 | Ulvac Corp | 蒸着装置 |
JP2003129224A (ja) * | 2001-10-26 | 2003-05-08 | Matsushita Electric Works Ltd | 真空蒸着装置及び真空蒸着方法 |
JP2003155555A (ja) * | 2001-11-15 | 2003-05-30 | Eiko Engineering Co Ltd | 薄膜堆積用複合分子線源セル |
Family Cites Families (3)
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---|---|---|---|---|
US6202591B1 (en) * | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
JP2004099942A (ja) * | 2002-09-05 | 2004-04-02 | Kiko Kenji Kagi Kofun Yugenkoshi | 成膜装置用蒸発源、成膜装置用蒸発源の加熱装置、及びそれらを用いた成膜材料加熱蒸発装置 |
CN2618925Y (zh) * | 2003-05-08 | 2004-06-02 | 深圳市创欧科技有限公司 | 用于制作有机电致发光显示器的蒸镀装置 |
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2004
- 2004-06-28 JP JP2004189282A patent/JP4570403B2/ja not_active Expired - Fee Related
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2005
- 2005-06-15 CN CNB2005800146515A patent/CN100558929C/zh not_active Expired - Fee Related
- 2005-06-15 WO PCT/JP2005/010948 patent/WO2006001205A1/ja active Application Filing
- 2005-06-24 TW TW094121254A patent/TWI398535B/zh not_active IP Right Cessation
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2006
- 2006-10-25 KR KR1020067022161A patent/KR101175165B1/ko not_active IP Right Cessation
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JP2003155555A (ja) * | 2001-11-15 | 2003-05-30 | Eiko Engineering Co Ltd | 薄膜堆積用複合分子線源セル |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009242892A (ja) * | 2008-03-31 | 2009-10-22 | Hoya Corp | レンズ製造方法、眼鏡用レンズ製造方法及び蒸着装置 |
JP2013189713A (ja) * | 2008-04-22 | 2013-09-26 | Picosun Oy | 堆積反応炉のための装置および方法 |
FR3018082A1 (fr) * | 2014-03-03 | 2015-09-04 | Riber | Procede de rechargement d'une cellule d'evaporation |
EP2915897A1 (fr) | 2014-03-03 | 2015-09-09 | Riber | Procédé de rechargement d'une cellule d'évaporation |
EP2937443A1 (fr) * | 2014-04-24 | 2015-10-28 | Riber | Cellule d'évaporation |
FR3020381A1 (fr) * | 2014-04-24 | 2015-10-30 | Riber | Cellule d'evaporation |
CN112553691A (zh) * | 2020-12-02 | 2021-03-26 | 中电化合物半导体有限公司 | 碳化硅晶体生长方法及生长装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200613575A (en) | 2006-05-01 |
JP4570403B2 (ja) | 2010-10-27 |
KR101175165B1 (ko) | 2012-08-20 |
JP2006009107A (ja) | 2006-01-12 |
CN1950537A (zh) | 2007-04-18 |
TWI398535B (zh) | 2013-06-11 |
KR20070024519A (ko) | 2007-03-02 |
CN100558929C (zh) | 2009-11-11 |
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