JP4445497B2 - 薄膜蒸着装置及びこれを利用した薄膜蒸着方法 - Google Patents
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- 238000000427 thin-film deposition Methods 0.000 title claims description 30
- 238000007736 thin film deposition technique Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 123
- 238000000151 deposition Methods 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 116
- 230000008021 deposition Effects 0.000 claims description 113
- 238000001704 evaporation Methods 0.000 claims description 43
- 230000008020 evaporation Effects 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 36
- 238000007740 vapor deposition Methods 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
図1は、従来技術による薄膜蒸着装置を示す概略的な平面図である。
図2は本発明による薄膜蒸着装置を示す概略的な平面図である。
21 チャンバ
22、30 るつぼ
24、32 基板
25 ロボットアーム
35 加熱部
Claims (14)
- 内部を真空で維持させるポンプ部を具備して、基板上に蒸着物質を蒸着する工程を遂行する少なくともニつのチャンバと、
前記チャンバ内部に設置される、蒸着物質が蒸着される前記基板及びマスクを支持する基板ホルダーと、
前記チャンバ内部に前記基板と対向するように設置されて、少なくともニつの蒸着物質を収納・加熱して蒸発させる多重蒸着物質るつぼと、前記蒸着物質の中で選択されるいずれか一つを局所的に加熱する加熱部とを具備する蒸発源と、
前記チャンバを少なくともニつのチャンバ安着位置に順次移動させるチャンバ移動手段と、
を含むことを特徴とする薄膜蒸着装置。 - 前記多重蒸着物質るつぼに具備された各蒸着物質の量は前記基板に一度に蒸着される量であることを特徴とする請求項1に記載の薄膜蒸着装置。
- 前記多重蒸着物質るつぼには各蒸着物質当り2ccないし5cc範囲の量が具備されることを特徴とする請求項2に記載の薄膜蒸着装置。
- 前記基板は、
無回転基板であることを特徴とする請求項1に記載の薄膜蒸着装置。 - 前記チャンバの一領域にそれぞれの前記蒸着物質が蒸着されるパターンによって前記マスクを投入・取出しさせるマスク交換手段をさらに具備することを特徴とする請求項1に記載の薄膜蒸着装置。
- 前記チャンバ移動手段は、
少なくともニつのチャンバ安着位置をレールに沿って移動することを特徴とする請求項1に記載の薄膜蒸着装置。 - 前記るつぼは、
熱伝導度の高いセラミックス、チタンTi及びステンレススチールからなるグループより選ばれるいずれか一つで形成されることを特徴とする請求項1に記載の薄膜蒸着装置。 - 前記熱伝導度の高いセラミックスは、
グラファイト、シリコンカーバイドSiC、アルミニウムナイトライドAlN、アルミナAl2O3、ボロンナイトライドBN及び石英Quratzからなるグループより選ばれるいずれか一つで形成されることを特徴とする請求項7に記載の薄膜蒸着装置。 - 前記加熱部で用いられるヒータは、
セラミックスヒータCeramicheater、タンタルヒータTa及びタングステンヒータからなるグループより選ばれるいずれか一つで形成されることを特徴とする請求項1に記載の薄膜蒸着装置。 - 少なくともニつの蒸着物質を収納・加熱して蒸発させる多重蒸着物質るつぼが具備された蒸発源を設置して、前記蒸発源と対向するように基板ホルダーに前記蒸着物質が蒸着される第1基板及びマスクを装着させたチャンバを準備する第1段階と、
前記チャンバをポンプ部によって内部を真空で維持させて、前記チャンバをチャンバ移動手段によって第1チャンバ安着位置に移動させる第2段階と、
前記蒸発源に設置された加熱部によって第1蒸着物質を局所的に加熱して前記第1基板上に前記第1蒸着物質を蒸着させる第3段階と、
前記第1基板が具備されたチャンバを第2チャンバ安着位置に移動させて、第2蒸着物質を局所的に加熱して前記第1基板上に第2蒸着物質を蒸着させると同時に第1チャンバ安着位置に第2基板を具備したチャンバを移動させて、第1蒸着物質を局所的に加熱して前記第2基板上に蒸着させる第4段階と、
前記第1基板が具備されたチャンバを最後のチャンバ安着位置に移動させて前記多重蒸着物質るつぼに具備された最後の蒸着物質を第1基板上に蒸着させると同時に各チャンバ安着位置に位置されたチャンバでそれぞれの蒸着物質を加熱して基板上に蒸着させる第5段階と、
前記第1基板に蒸着物質の蒸着が完了すれば前記第1基板を取り出す第6段階と、
を含むことを特徴とする薄膜蒸着装置を利用した薄膜蒸着方法。 - 前記第2ないし第5段階において、
前記チャンバ移動手段はレールを具備して前記チャンバを各チャンバ安着位置に移動させて、前記基板上に各チャンバ安着位置で加熱されるそれぞれの蒸着物質を順次蒸着させることを特徴とする請求項10に記載の薄膜蒸着装置を利用した薄膜蒸着方法。 - 前記第1段階において、
前記多重蒸着物質るつぼに具備された各蒸着物質の量は、前記基板に一度に蒸着される量であることを特徴とする請求項10に記載の薄膜蒸着装置を利用した薄膜蒸着方法。 - 前記第1段階において、
前記多重蒸着物質るつぼに具備された各蒸着物質の量は2ccないし5cc範囲であることを特徴とする請求項12に記載の薄膜蒸着装置を利用した薄膜蒸着方法。 - 前記第3ないし第5段階において、
マスク交換手段によって前記チャンバの一領域にそれぞれの前記蒸着物質が蒸着されるパターンによってマスクを投入・取出しさせることを特徴とする請求項10に記載の薄膜蒸着装置を利用した薄膜蒸着方法。
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KR1020060042321A KR100805526B1 (ko) | 2006-05-11 | 2006-05-11 | 박막 증착장치 및 이를 이용한 박막 증착방법 |
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JP4445497B2 true JP4445497B2 (ja) | 2010-04-07 |
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KR101673017B1 (ko) * | 2010-07-30 | 2016-11-07 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조 방법 |
KR20200086582A (ko) | 2019-01-09 | 2020-07-17 | 삼성전자주식회사 | 원자층 증착 장치 및 이를 이용한 박막 형성 방법 |
CN114032528A (zh) * | 2021-11-08 | 2022-02-11 | 江西汉可泛半导体技术有限公司 | Gw级异质结hwcvd设备 |
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