1353389 第96104765號專利說明書修正本 修正日期_· 100年3月22曰 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種蒸鍍設備，特別係有關於一種 . 方便更新蒸鍍材料的蒸鍍設備。 【先前技4标】1353389 Patent Specification No. 96104765 Revision of this revision date _· March 20, 29, invention description: [Technical Field of the Invention] The present invention relates to an evaporation apparatus, and more particularly to a vaporization apparatus. Material evaporation equipment. [Previous skill 4 standard]
參照第1圖，其係顯示習知之蒸鍍設備1，包括一反 應腔體10、一電洞注入單元（電洞注入蒸鍍源）20、一電 洞傳輸單元（電洞傳輸蒸鍍源）30、一發光層塗佈單元（發 光層塗佈蒸鍍源）40以及一電子傳輸單元（電子傳輸蒸鍍 源）50。該電洞注入單元20、電洞傳輸單元30、發光層 塗佈單元40以及電子傳輸單元50係設於該反應腔體10 之中。基板2於該反應腔體10中，以滚輪傳輸等方式（未 圖示）於該反應腔體10中移動，並依序經過該電洞注入 單元20、電洞傳輸單元30、發光層塗佈單元40以及電 子傳輸單元50的上方。該電洞注入單元20、電洞傳輸單 元30、發光層塗佈單元40以及電子傳輸單元50分別以 對該基板2進行製程處理。 在習知技術中，當欲更新電洞注入單元20、電洞傳 輸單元30、發光層塗佈單元40以及電子傳輸單元50中 的蒸鍍材料時，需要將蒸鍍設備1停止運作，並解除反 應腔體10中的真空狀態，方能進行蒸鍍材料的更換。由 於將反應腔體10中的真空狀態解除以及恢復需要花費相 當長的時間，因此習知的蒸鍍材料更換方式較費時，並 因此導致生產成本的提高。 5 1353389 修正日期：100年3月22日 第96104765號專利說明書修正本 【發明内容】 —本發明即為了欲解決習知技術之問題而提供之一種 蒸鍍設備，包括一反應腔體、一子腔體以及一第一蒸鍍 源。子腔體連通該反應腔體，該子腔體包括一真空閥^ 以及-減壓閥Η ’該真空閥門設於該子腔體與該反應腔 體^間’該減壓_設於該子㈣與大氣環境之間。第 一療·鐘源設於該子腔體之中。 …用本Ιχ月之蒸鑛s又備，由於使用子腔體來分隔該 ^應^以及外界的大氣環境。因此，當欲更換蒸鑛源 k ’僅而要針對子㈣内的氣縣力進行難。而由於 T腔ί :積較:1、’抽真空所耗費的時間將大幅縮短，因 i):可即省更換蒸鍍源所花費的時間，降低生產成本。 【實施方式】 備ioV:H圖’其係顯示本發明第一實施例之蒸錢設 ^ 一反應腔體10、一第一蒸鍍源（電洞 注入 二：值私；電洞傳輸單元30、一發光層塗佈單元40、 :1早兀50以及一子腔體12〇。 一 Π洞傳輸單元3〇、發光層塗佈單元4〇、電； 篦兀-4:乂及子腔體120均設於該反應腔體1〇之中。該 弟一洛鍍源110設於該早狀邱1〇Λ 丄 包括一真空閥門121以：腔二120之中。該子腔體⑽ 單元3〇包括Λ、、二二減壓閱門122。上述電洞傳輸 塗佈蒸鍍源，電子傳輸單元％均包括一電： (在本發明的實施例中，係以電洞注入蒸锻 Λ'為例，然而，上述每-種蒸鍍源皆可進行更換’ 1353389 . 第961〇4765號專臟明書修正本 修正日期··年3月22日 .其可利用旋轉方式進入子腔體内，或是其他等效的方 法，例如當子腔體於外部時，可以利用滑移子腔體的方 式來進行更換）。 ' 參照第2a圖，當進行蒸鍍時，真空閥門121開啟， 第洛鐘源〇對該基板2進行蒸錢。參照第3圖，當 欲更換該第一蒸鍍源1〗〇時，該真空閥門121關閉，^ 此隔絕該反應腔體10與該子腔體120(sn，搭配參照^ 2b圖h再，該子腔體120内的氣體壓力被調整至常塵狀 %態（S12)。接著，該減壓閥門122開啟，以更換該第一蒸 .鐘源110(S13,搭配參照第2c圖）。然後，關閉減塵閥門 122 ,將該子腔體120内的氣體壓力降低至真空狀態 = 14^搭配參照第2b圖）。最後，真空閥門121開啟（s]5， 搭配參照第2a圖）’藉此該第一蒸鍍源11〇即可重 蒸鍍製程。 該第一蒸鍍源110係以可拆卸的方式設於該子腔體 120之中。在一實施例中，該第一蒸鍍源11〇係以可滑動 的方式設於該子腔體12〇之中，當欲更換時，該第一蒸 1鍍源110滑出該子腔體12〇以進行更換。 … 應用本發明之蒸鐘設備，由於使用子腔體來分隔該 反應腔體以及外界的大氣環境。因此，當欲更換蒸鍍源 時’僅需要針對子腔體内的氣體壓力進行調整。而^於 子腔體體積較小’抽真空所耗費的時間將大幅縮短，因 此可，省更換蒸鑛源所花費的時間，降低生產成本。 麥照第4a圖，其係顯示本發明第二實施例之蒗 備200，其特點在於，更包括—第二蒸鐘源21〇、 221、^板222以及密封元件奶。該第—蒸錢源川 7 1353389 第％1〇4765號專利說明書修正本 修正日期：削年3月22曰 與該第二蒸鍍源210設於該隔板222之上，該隔板222 透過該樞軸221樞轉。密封元件223設於該隔板222與 該子腔體120的内壁之間。 該第一蒸鍍源110相反於該第二蒸鍍源21〇C)當該第 一瘵鍍源110需要被更換時，參照第4b圖，可透過旋轉 該樞軸221而以該第二蒸鍍源21〇取代該第一蒸鍍源 110。藉此，該蒸鍍設備2〇〇可以繼續以該第二蒸鍍源21〇 進行製程，同時，該第一蒸鍍源11〇可被拆卸以及更換。 在第二實施例之蒸鍍設備200的子腔體12〇中，氣體壓 力可以分區局部的被控制。 a應用本發明第二實施例之蒸鍍設備2〇〇，可更進一步 的節省更換蒸鍍源所花費的時間，降低生產成本。 參妝第5a-5c圖，其係顯示本發明第三實施例之蒸鍍 設備300，其特點在於，第一蒸鍍源310係經過該子腔體 320而從該反應腔體1〇之中置換。該子腔體32〇包括一 真空閥門32 ]以及一減壓閥門322。 斤搭？參照第6圖’當欲更換該第一蒸鍵源31〇時， ，第-热鑛源310藉由滑軌被移動至一待輸送位置，接 者：該^空閥門切開啟，一具有螺紋的長金屬棒將 邊第-洛鑛源310推動進入該子腔體32〇(S2i，搭配參照 =5b圖）。接著，該真空閥門321關，藉此隔絕該反 應腔祖10與該子腔體32〇(S22’搭配參照第^圖）。再， 該子腔體320内的氣體壓力被調整至常壓 二322開啟，以更換該第-蒸鑛源 ==後，關閉減壓闊門切，將該子腔體320内 、亂-i &至真空狀態（S25 ’搭配參照第5c圖）。最 1353389 第96104765號專利說明書修正本 修正日期：100年3月22曰 後’真空閥門321開啟（S26) ’該第一蒸鍍源11 〇經過真 空閥門321重新進入反應腔體中以進行蒸鍍製程。 參照第7圖，其係顯示本發明第四實施例之蒸鑛設 備400 ’其特點在於，子腔體420位於該反應腔體10之 外’該子腔體420包括一真空閥門421以及一減壓閥門 422。同第三實施例，該第一蒸鍍源31〇係經過該子腔體 320而進入該反應腔體1〇之中。 荼照第 圃Referring to Fig. 1, there is shown a conventional vapor deposition apparatus 1 comprising a reaction chamber 10, a hole injection unit (hole injection evaporation source) 20, and a hole transmission unit (hole transmission evaporation source). 30. A light-emitting layer coating unit (light-emitting layer coating vapor deposition source) 40 and an electron transport unit (electron transport evaporation source) 50. The hole injection unit 20, the hole transport unit 30, the light-emitting layer applying unit 40, and the electron transport unit 50 are disposed in the reaction chamber 10. The substrate 2 is moved in the reaction chamber 10 by means of roller transport or the like (not shown), and sequentially passes through the hole injection unit 20, the hole transport unit 30, and the light-emitting layer. Above the unit 40 and the electron transport unit 50. The hole injection unit 20, the hole transmission unit 30, the light-emitting layer applying unit 40, and the electron transfer unit 50 perform processing processing on the substrate 2, respectively. In the prior art, when the vapor deposition material in the hole injection unit 20, the hole transfer unit 30, the light-emitting layer coating unit 40, and the electron transport unit 50 is to be updated, it is necessary to stop the vapor deposition apparatus 1 and release it. The vacuum state in the reaction chamber 10 can be used to replace the vapor deposition material. Since it takes a relatively long time to release and recover the vacuum state in the reaction chamber 10, the conventional method of replacing the vapor deposition material is time consuming, and thus the production cost is increased. 5 1353389 MODIFICATION OF THE EMBODIMENT OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION In order to solve the problems of the prior art, the present invention provides a vapor deposition apparatus including a reaction chamber and a sub-assembly. a cavity and a first evaporation source. The sub-cavity communicates with the reaction chamber, the sub-cavity includes a vacuum valve and a pressure reducing valve Η 'the vacuum valve is disposed between the sub-cavity and the reaction chamber ^. The decompression_ is disposed in the sub-cavity (4) Between the atmosphere and the atmosphere. The first treatment clock source is located in the sub-cavity. ...with the steaming s of this month, it is also prepared, because the sub-cavity is used to separate the environment and the external atmosphere. Therefore, it is difficult to change the steam source k ’ only for the gas power in the sub (4). Since the T cavity ί : product comparison: 1, 'the time taken for vacuuming will be greatly shortened, because i): can save the time spent on the evaporation source, reducing production costs. [Embodiment] The ioV:H diagram is shown in the first embodiment of the present invention. The evaporation chamber is provided with a first vapor deposition source (hole injection: value private; hole transmission unit 30). , a light-emitting layer coating unit 40, : 1 early 50 and a sub-cavity 12 〇. One hole transmission unit 3 发光, luminescent layer coating unit 4 〇, electricity; 篦兀-4: 乂 and sub-cavity 120 is disposed in the reaction chamber 1 。. The 一一洛 plating source 110 is disposed in the early 〇Λ 1 〇Λ 丄 includes a vacuum valve 121 to: the cavity 2 120. The sub-cavity (10) unit 3 〇 Λ 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 For example, however, each of the above-mentioned vapor deposition sources can be replaced '1353389. No. 961〇4765 visceral amendments Amendment date··March 22nd. It can be rotated into the sub-cavity Or other equivalent methods, such as when the sub-cavity is external, can be replaced by slipping the sub-cavity.) Referring to Figure 2a, when When the vapor deposition is performed, the vacuum valve 121 is opened, and the first clock source 〇 is steamed. Referring to FIG. 3, when the first vapor deposition source 1 is to be replaced, the vacuum valve 121 is closed, ^ The reaction chamber 10 and the sub-cavity 120 are isolated (sn, and the gas pressure in the sub-cavity 120 is adjusted to the normal dust state (S12). Then, the pressure reducing valve 122 is opened to replace the first steam source 110 (S13, with reference to Figure 2c). Then, the dust reduction valve 122 is closed, and the gas pressure in the sub-cavity 120 is reduced to a vacuum state = 14^ with reference Figure 2b) Finally, the vacuum valve 121 is opened (s]5, with reference to Figure 2a). The first evaporation source 11 can be re-evaporated. The first evaporation source 110 is The detaching manner is disposed in the sub-cavity 120. In an embodiment, the first evaporation source 11 is slidably disposed in the sub-cavity 12 ,, when it is to be replaced, The first steaming 1 plating source 110 slides out of the sub-cavity 12〇 for replacement. ... Applying the steaming device of the present invention, the reaction is separated by using a sub-cavity The atmosphere of the body and the outside world. Therefore, when it is desired to replace the vapor deposition source, it is only necessary to adjust the gas pressure in the sub-cavity. However, the volume of the sub-cavity is small, and the time taken for vacuuming is greatly shortened. Therefore, the time taken to replace the steam source can be reduced, and the production cost can be reduced. The photo of the photo of the second embodiment of the present invention is shown in Fig. 4a, which is characterized in that it further comprises a second steam source 21 〇, 221, 板 222 and sealing element milk. The first - steamed money source Sichuan 7 1353389 No. 1 〇 4765 patent specification revised this revision date: the year of March 22 曰 and the second evaporation source 210 is set at Above the partition 222, the partition 222 is pivoted through the pivot 221 . A sealing member 223 is disposed between the partition 222 and an inner wall of the sub-cavity 120. The first evaporation source 110 is opposite to the second evaporation source 21〇C). When the first plating source 110 needs to be replaced, referring to FIG. 4b, the second steam can be rotated by rotating the pivot 221 The plating source 21 is replaced by the first evaporation source 110. Thereby, the vapor deposition apparatus 2 can continue to perform the process by the second evaporation source 21, while the first evaporation source 11 can be removed and replaced. In the sub-cavity 12A of the vapor deposition apparatus 200 of the second embodiment, the gas pressure can be locally controlled. By applying the vapor deposition apparatus 2 of the second embodiment of the present invention, the time taken to replace the vapor deposition source can be further saved, and the production cost can be reduced. 5A-5c, which shows a vapor deposition apparatus 300 according to a third embodiment of the present invention, characterized in that a first evaporation source 310 passes through the sub-cavity 320 and is from the reaction chamber 1 Replacement. The sub-cavity 32A includes a vacuum valve 32] and a pressure reducing valve 322. Put on the pound? Referring to FIG. 6 'When the first steam source 31 欲 is to be replaced, the first hot mineral source 310 is moved to a to-be-conveyed position by the slide rail, and the pick-up: the empty valve is opened, one has a thread The long metal rod pushes the edge-Luo mine source 310 into the sub-cavity 32 (S2i, with reference = 5b). Next, the vacuum valve 321 is closed, thereby isolating the reaction chamber ancestor 10 from the sub-cavity 32 (S22' with reference to Fig. 2). Then, the gas pressure in the sub-cavity 320 is adjusted to be turned on at the normal pressure two 322, and after the replacement of the first-steam source ==, the decompression wide-gate is closed, and the sub-cavity 320 is in the chaotic-i & to vacuum state (S25 'match with reference to Figure 5c). No. 1353389 Patent Specification No. 96104765 Revised this revision date: After March 22, 100, 'vacuum valve 321 is opened (S26) 'The first evaporation source 11 重新 re-enters the reaction chamber through vacuum valve 321 for evaporation Process. Referring to Figure 7, there is shown a steaming apparatus 400' of a fourth embodiment of the present invention, characterized in that the sub-chamber 420 is located outside the reaction chamber 10. The sub-chamber 420 includes a vacuum valve 421 and a subtraction Pressure valve 422. In the same manner as the third embodiment, the first vapor deposition source 31 passes through the sub-cavity 320 and enters the reaction chamber 1〇.第照第圃
其係顯示本發明第五實施例之蒸鍍設 備500，其特點在於，子腔體32〇設有第二蒸鍍源51〇 , 當欲^換該第一蒸鍍源31〇時，該第二蒸鍍源51〇直接 與該弟一瘵鍍源310相互替換，如此，可更進一步的節 省更換蒸鍍源所花費的時間，降低生產成本。 爹照第9a以及9b圖，在此以第一蒸鍍源！ 1〇為例， 說明各蒸鍍源的細部結構。第一蒸鍍源11〇包括一殼體 in、一側板112、複數個螺栓113、一坩堝114以及蒸 鍍材料115。蒸鍍材料115置於坩堝114之中。坩堝ιΐ4 設於殼體ill之中。螺栓113將側板112固定於該殼體 =1之上。當欲更換蒸鐘材料115時，該等螺检ιΐ3被拆 該側板】12開啟，該增禍m從該殼體⑴中被取 出以更換該蒸鍵材料115。 ^發明已以具體之較佳實施例揭露如上，然苴 本本發明，任何熟習此項技藝者，在不脫離 =之精神和範圍内’仍可作些許的更動與濁飾，因 為準發明之“㈣當視後附之申請專利翻所界定者 9 1353389 第96104765號專利說明書修正本 修正日期：1〇〇年3月22日 【圖式簡單說明】 第1圖係顯示習知之蒸鍍設備； 第2a圖係顯示本發明第一實施例的蒸鍍設備； 第2b圖係顯示第一實施例中，子腔體内氣體壓力調 整的情況； 第2c圖係顯示更換第一蒸鍍源的情況； 第3圖係顯示本發明第一實施例之蒸鍍源更換流程； 第4a圖係顯示本發明第二實施例的蒸鍍設備；The vapor deposition apparatus 500 according to the fifth embodiment of the present invention is characterized in that the sub-cavity 32 is provided with a second evaporation source 51〇, and when the first evaporation source 31〇 is to be replaced, the first The two evaporation source 51〇 is directly replaced with the other one of the plating source 310, so that the time taken to replace the evaporation source can be further saved, and the production cost can be reduced. Referring to Figures 9a and 9b, here is the first evaporation source! 1〇 is taken as an example to illustrate the detailed structure of each vapor deposition source. The first vapor deposition source 11A includes a casing in, a side plate 112, a plurality of bolts 113, a weir 114, and a vapor deposition material 115. The evaporation material 115 is placed in the crucible 114.坩埚ιΐ4 is placed in the housing ill. A bolt 113 secures the side panel 112 above the housing =1. When the steaming material 115 is to be replaced, the screws 3 are removed from the side panel 12, and the scoring m is taken out of the casing (1) to replace the steaming material 115. The invention has been described above with reference to the preferred embodiments thereof, and it is to be understood that those skilled in the art, in the spirit and scope of the invention, may still make some modifications and necessities, as the invention (4) Defining the patent application for the definition of the attached patent 9 1353389 Patent Specification No. 96104765 Revision of this amendment date: March 22, 2010 [Simple description of the drawing] Figure 1 shows the conventional vapor deposition equipment; 2a is a vapor deposition apparatus according to a first embodiment of the present invention; FIG. 2b is a view showing a gas pressure adjustment in a sub-chamber in the first embodiment; and FIG. 2c is a view showing a state in which a first vapor deposition source is replaced; 3 is a flow chart showing a vapor deposition source replacement process according to a first embodiment of the present invention; and FIG. 4a is a vapor deposition device showing a second embodiment of the present invention;
第4b圖係顯示本發明第二實施例中，第二蒸鍍源替 換第一蒸鐘源的情況； 第5a圖係顯示本發明第三實施例的蒸鍍設備； 第5b圖係顯示第三實施例中，移動該第一蒸鍍源的 情況； 第5c圖係顯示第三實施例中，子腔體内氣體壓力調整 的情況； 第6圖係顯示本發明第三實施例之蒸鍍源更換流程； 第7圖係顯示本發明第四實施例之蒸鍍設備；Figure 4b shows a second embodiment of the present invention in which the second vapor deposition source replaces the first vapor source; Figure 5a shows the vapor deposition apparatus of the third embodiment of the present invention; and Figure 5b shows the third In the embodiment, the first evaporation source is moved; the 5th diagram shows the gas pressure adjustment in the sub-chamber in the third embodiment; and the 6th shows the evaporation source in the third embodiment of the present invention. Replacement process; Figure 7 is a vapor deposition apparatus showing a fourth embodiment of the present invention;
第8圖係顯示本發明第五實施例之蒸鍍設備； 第9a以及9b圖係顯示蒸鍍源的細部結構。 【主要元件符號說明】 1〜蒸鍍設備； 10〜反應腔體； 30〜電洞傳輸單元； 2〜基板； 20〜電洞注入單元； 40〜發光層塗佈單元； 50〜電子傳輸單元； 60〜金屬棒； 100、200、300、400、500〜蒸鍍設備； 10 1353389 第96104765號專利說明書修正本 修正日期：100年3月22日 110〜 -第一蒸鐘源； 111， “側板； 112〜 -螺栓； 113- ^掛埸； Π4〜蒸鐘材料； 120- -子腔體； 121〜 -真空閥門； 122- -減壓閥門； 210〜 •第二蒸鐘源； 221- -枢轴； 222〜 •隔板， 223- -密封元件； 310〜 •第一蒸鐘源； 320- -子腔體； 321〜 •真空閥門； 322- -減壓閥門； 420〜 •子腔體； 421- -真空閥門； 422〜 •減壓閥門； 510- "第二蒸鍍源； sn、 S12、_..S15〜 第一實施例的蒸鍍源更換步驟 S21 ' S22、...S26〜 第三實施例的蒸鍍源更換步驟Fig. 8 is a view showing an evaporation apparatus according to a fifth embodiment of the present invention; and Figs. 9a and 9b are diagrams showing a detailed structure of an evaporation source. [Description of main components] 1~ evaporation equipment; 10~ reaction chamber; 30~ hole transfer unit; 2~ substrate; 20~ hole injection unit; 40~ light-emitting layer coating unit; 50~ electron transfer unit; 60~Metal rod; 100, 200, 300, 400, 500~ evaporation equipment; 10 1353389 Patent specification No. 96104765 Revision date: March 22, 100, 110~ - First steam source; 111, "Side plate 112~-bolt; 113-^ hanging 埸; Π4~ steaming material; 120--sub-cavity; 121~-vacuum valve; 122--pressure reducing valve; 210~ • second steaming source; 221- Pivot; 222~ • partition, 223--seal element; 310~ • first steam source; 320--sub-cavity; 321~ • vacuum valve; 322--pressure relief valve; 420~ • sub-cavity 421--vacuum valve; 422~•pressure reducing valve; 510- "second evaporation source; sn, S12, _..S15~ The first embodiment of the evaporation source replacement step S21 'S22,... S26~ The evaporation source replacement step of the third embodiment