WO2003075328A1 - Procede de reglage d'un systeme optique de projection, procede de prediction, procede d'evaluation, procede de reglage, procede d'exposition, dispositif d'exposition, programme et procede de fabrication dudit dispositif - Google Patents
Procede de reglage d'un systeme optique de projection, procede de prediction, procede d'evaluation, procede de reglage, procede d'exposition, dispositif d'exposition, programme et procede de fabrication dudit dispositif Download PDFInfo
- Publication number
- WO2003075328A1 WO2003075328A1 PCT/JP2003/002375 JP0302375W WO03075328A1 WO 2003075328 A1 WO2003075328 A1 WO 2003075328A1 JP 0302375 W JP0302375 W JP 0302375W WO 03075328 A1 WO03075328 A1 WO 03075328A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical system
- projection optical
- exposure
- pattern
- measured
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003573687A JP4352458B2 (ja) | 2002-03-01 | 2003-02-28 | 投影光学系の調整方法、予測方法、評価方法、調整方法、露光方法及び露光装置、露光装置の製造方法、プログラム並びにデバイス製造方法 |
AU2003211559A AU2003211559A1 (en) | 2002-03-01 | 2003-02-28 | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method |
US10/927,287 US7088426B2 (en) | 2002-03-01 | 2004-08-27 | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method |
US11/336,947 US7102731B2 (en) | 2002-03-01 | 2006-01-23 | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method |
US11/447,004 US20060227306A1 (en) | 2002-03-01 | 2006-06-06 | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002056116 | 2002-03-01 | ||
JP2002-56116 | 2002-03-01 | ||
JP2003-43682 | 2003-02-21 | ||
JP2003043682 | 2003-02-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/927,287 Continuation US7088426B2 (en) | 2002-03-01 | 2004-08-27 | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003075328A1 true WO2003075328A1 (fr) | 2003-09-12 |
WO2003075328A9 WO2003075328A9 (fr) | 2004-02-05 |
Family
ID=27790935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/002375 WO2003075328A1 (fr) | 2002-03-01 | 2003-02-28 | Procede de reglage d'un systeme optique de projection, procede de prediction, procede d'evaluation, procede de reglage, procede d'exposition, dispositif d'exposition, programme et procede de fabrication dudit dispositif |
Country Status (4)
Country | Link |
---|---|
US (3) | US7088426B2 (ja) |
JP (1) | JP4352458B2 (ja) |
AU (1) | AU2003211559A1 (ja) |
WO (1) | WO2003075328A1 (ja) |
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JP2007194551A (ja) * | 2006-01-23 | 2007-08-02 | Nikon Corp | 算出方法、調整方法及び露光方法、並びに像形成状態調整システム及び露光装置 |
US7403291B2 (en) | 2004-09-16 | 2008-07-22 | Canon Kabushiki Kaisha | Method of calculating two-dimensional wavefront aberration |
JP2009004509A (ja) * | 2007-06-20 | 2009-01-08 | Canon Inc | 露光装置およびデバイス製造方法 |
JP2014132280A (ja) * | 2011-10-14 | 2014-07-17 | Canon Inc | 波面を推定する方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424552A (en) * | 1991-07-09 | 1995-06-13 | Nikon Corporation | Projection exposing apparatus |
JP2000121491A (ja) * | 1998-10-20 | 2000-04-28 | Nikon Corp | 光学系の評価方法 |
JP2001085305A (ja) * | 1999-09-10 | 2001-03-30 | Toshiba Corp | 露光装置の収差測定方法および収差測定システム |
EP1128217A2 (en) * | 2000-02-23 | 2001-08-29 | Asm Lithography B.V. | Method of measuring aberration in an optical imaging system |
US20020001071A1 (en) * | 2000-06-30 | 2002-01-03 | Kabushiki Kaisha Toshiba | Method of correcting projection optical system and method of manufacturing semiconductor device |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0712012B2 (ja) * | 1985-12-11 | 1995-02-08 | 株式会社ニコン | 投影露光装置 |
US4759626A (en) | 1986-11-10 | 1988-07-26 | Hewlett-Packard Company | Determination of best focus for step and repeat projection aligners |
US4786166A (en) * | 1987-06-01 | 1988-11-22 | Hewlett-Packard Company | Determination of focal plane for a scanning projection aligner |
CA1310205C (en) | 1988-03-31 | 1992-11-17 | Roger L. Barr | Quantitative lense analysis technique |
JP2766575B2 (ja) * | 1992-01-23 | 1998-06-18 | 三菱電機株式会社 | 投影レンズの評価装置及び評価方法 |
JP3230536B2 (ja) | 1992-04-17 | 2001-11-19 | オリンパス光学工業株式会社 | 光学性能測定方法及び装置 |
JP3259373B2 (ja) * | 1992-11-27 | 2002-02-25 | 株式会社日立製作所 | 露光方法及び露光装置 |
JPH06235619A (ja) | 1993-02-10 | 1994-08-23 | Olympus Optical Co Ltd | 波面収差測定器 |
US6753948B2 (en) * | 1993-04-27 | 2004-06-22 | Nikon Corporation | Scanning exposure method and apparatus |
US5754299A (en) * | 1995-01-13 | 1998-05-19 | Nikon Corporation | Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus |
JP3893626B2 (ja) * | 1995-01-25 | 2007-03-14 | 株式会社ニコン | 投影光学装置の調整方法、投影光学装置、露光装置及び露光方法 |
JPH09167731A (ja) * | 1995-12-14 | 1997-06-24 | Mitsubishi Electric Corp | 投影露光装置、収差評価用マスクパタン、収差量評価方法、収差除去フィルター及び半導体装置の製造方法 |
JP3795998B2 (ja) * | 1996-04-30 | 2006-07-12 | パイオニア株式会社 | 波面収差補正ユニット、波面収差補正装置及び光ピックアップ |
US5807647A (en) * | 1996-07-03 | 1998-09-15 | Kabushiki Kaisha Toshiba | Method for determining phase variance and shifter stability of phase shift masks |
US5898501A (en) * | 1996-07-25 | 1999-04-27 | Nikon Corporation | Apparatus and methods for measuring wavefront aberrations of a microlithography projection lens |
JP4192279B2 (ja) | 1996-09-27 | 2008-12-10 | 株式会社ニコン | 投影光学系の製造方法、該製造方法によって製造された投影光学系、投影露光装置および方法、並びに半導体装置の製造方法 |
US5978085A (en) | 1997-03-07 | 1999-11-02 | Litel Instruments | Apparatus method of measurement and method of data analysis for correction of optical system |
JPH11118613A (ja) | 1997-10-15 | 1999-04-30 | Olympus Optical Co Ltd | 波面収差の測定装置及び測定方法 |
JP3673633B2 (ja) | 1997-12-16 | 2005-07-20 | キヤノン株式会社 | 投影光学系の組立調整方法 |
JPH11233424A (ja) | 1998-02-09 | 1999-08-27 | Nikon Corp | 投影光学装置、収差測定方法、及び投影方法、並びにデバイス製造方法 |
DE19820785A1 (de) | 1998-04-17 | 1999-10-21 | Johannes Schwider | Absolutprüfung von asphärischen Flächen unter Zuhilfenahme von diffraktiven Normalelementen und planen sowie sphärischen Referenzflächen |
AU3849199A (en) | 1998-05-19 | 1999-12-06 | Nikon Corporation | Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method |
JP2000047103A (ja) | 1998-07-27 | 2000-02-18 | Nikon Corp | 投影光学系の調整方法 |
GB9820664D0 (en) * | 1998-09-23 | 1998-11-18 | Isis Innovation | Wavefront sensing device |
US6100978A (en) * | 1998-10-21 | 2000-08-08 | Naulleau; Patrick P. | Dual-domain point diffraction interferometer |
JP2000146757A (ja) | 1998-11-12 | 2000-05-26 | Hitachi Ltd | 投影レンズの収差測定方法 |
US6248486B1 (en) | 1998-11-23 | 2001-06-19 | U.S. Philips Corporation | Method of detecting aberrations of an optical imaging system |
JP3742242B2 (ja) | 1999-03-15 | 2006-02-01 | 株式会社東芝 | 収差評価方法 |
AU3193900A (en) | 1999-03-18 | 2000-10-04 | Nikon Corporation | Exposure system and aberration measurement method for its projection optical system, and production method for device |
JP2000331923A (ja) | 1999-05-24 | 2000-11-30 | Nikon Corp | 投影光学系およびその結像特性調整方法並びに投影露光装置 |
US6118535A (en) * | 1999-06-02 | 2000-09-12 | Goldberg; Kenneth Alan | In Situ alignment system for phase-shifting point-diffraction interferometry |
JP2001230193A (ja) | 2000-02-18 | 2001-08-24 | Canon Inc | 波面収差測定方法及び投影露光装置 |
TWI256484B (en) * | 2000-02-23 | 2006-07-01 | Asml Netherlands Bv | Method of measuring aberration in an optical imaging system |
TW500987B (en) | 2000-06-14 | 2002-09-01 | Asm Lithography Bv | Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
EP1246014A1 (en) | 2001-03-30 | 2002-10-02 | ASML Netherlands B.V. | Lithographic apparatus |
US6459480B1 (en) * | 2000-09-14 | 2002-10-01 | Advanced Micro Devices, Inc. | Measurement method of Zernike coma aberration coefficient |
WO2002050506A1 (fr) | 2000-12-18 | 2002-06-27 | Nikon Corporation | Appareil de mesure de surface d'onde et son utilisation, procede et appareil pour determiner des caracteristiques de mise au point, procede et appareil pour corriger des caracteristiques de mise au point, procede pour gerer des caracteristiques de mise au point, et procede et appareil d'exposition |
EP1347501A4 (en) * | 2000-12-22 | 2006-06-21 | Nikon Corp | WAVE FRONT ABERRATION MEASURING INSTRUMENT, WAVE FRONT ABERRATION MEASUREMENT METHOD, EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING MICRODISPOSITIVE DEVICE |
JP4552337B2 (ja) | 2000-12-28 | 2010-09-29 | 株式会社ニコン | 投影光学系の製造方法及び露光装置の製造方法 |
WO2002054036A1 (fr) * | 2000-12-28 | 2002-07-11 | Nikon Corporation | Procede de mesure et d'ajustement de caracteristiques d'imagerie, procede et systeme d'exposition, programme et support d'enregistrement et procede de production de dispositif |
WO2002063664A1 (fr) * | 2001-02-06 | 2002-08-15 | Nikon Corporation | Systeme et procede d'exposition et procede de production de dispositif |
JP4436029B2 (ja) | 2001-02-13 | 2010-03-24 | 株式会社ニコン | 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム |
TWI220998B (en) * | 2001-02-13 | 2004-09-11 | Nikon Corp | Exposure method, exposure apparatus and manufacture method of the same |
WO2003065428A1 (fr) | 2002-01-29 | 2003-08-07 | Nikon Corporation | Systeme de reglage d'etat de formation d'images, procede d'insolation, appareil d'exposition, programme, et support d'enregistrement d'information |
DE10224363A1 (de) * | 2002-05-24 | 2003-12-04 | Zeiss Carl Smt Ag | Verfahren zur Bestimmung von Wellenfrontaberrationen |
-
2003
- 2003-02-28 WO PCT/JP2003/002375 patent/WO2003075328A1/ja active Application Filing
- 2003-02-28 JP JP2003573687A patent/JP4352458B2/ja not_active Expired - Fee Related
- 2003-02-28 AU AU2003211559A patent/AU2003211559A1/en not_active Abandoned
-
2004
- 2004-08-27 US US10/927,287 patent/US7088426B2/en not_active Expired - Fee Related
-
2006
- 2006-01-23 US US11/336,947 patent/US7102731B2/en not_active Expired - Fee Related
- 2006-06-06 US US11/447,004 patent/US20060227306A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424552A (en) * | 1991-07-09 | 1995-06-13 | Nikon Corporation | Projection exposing apparatus |
JP2000121491A (ja) * | 1998-10-20 | 2000-04-28 | Nikon Corp | 光学系の評価方法 |
JP2001085305A (ja) * | 1999-09-10 | 2001-03-30 | Toshiba Corp | 露光装置の収差測定方法および収差測定システム |
EP1128217A2 (en) * | 2000-02-23 | 2001-08-29 | Asm Lithography B.V. | Method of measuring aberration in an optical imaging system |
US20020001071A1 (en) * | 2000-06-30 | 2002-01-03 | Kabushiki Kaisha Toshiba | Method of correcting projection optical system and method of manufacturing semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US7403291B2 (en) | 2004-09-16 | 2008-07-22 | Canon Kabushiki Kaisha | Method of calculating two-dimensional wavefront aberration |
JP2007163461A (ja) * | 2005-11-15 | 2007-06-28 | Olympus Corp | レンズ評価装置 |
JP2007163455A (ja) * | 2005-11-15 | 2007-06-28 | Olympus Corp | レンズ評価装置 |
JP2007194551A (ja) * | 2006-01-23 | 2007-08-02 | Nikon Corp | 算出方法、調整方法及び露光方法、並びに像形成状態調整システム及び露光装置 |
JP2009004509A (ja) * | 2007-06-20 | 2009-01-08 | Canon Inc | 露光装置およびデバイス製造方法 |
JP2014132280A (ja) * | 2011-10-14 | 2014-07-17 | Canon Inc | 波面を推定する方法 |
US9182289B2 (en) | 2011-10-14 | 2015-11-10 | Canon Kabushiki Kaisha | Apparatus and method for estimating wavefront parameters |
Also Published As
Publication number | Publication date |
---|---|
US20060119823A1 (en) | 2006-06-08 |
US7102731B2 (en) | 2006-09-05 |
US20050024612A1 (en) | 2005-02-03 |
JPWO2003075328A1 (ja) | 2005-06-30 |
US20060227306A1 (en) | 2006-10-12 |
JP4352458B2 (ja) | 2009-10-28 |
WO2003075328A9 (fr) | 2004-02-05 |
US7088426B2 (en) | 2006-08-08 |
AU2003211559A1 (en) | 2003-09-16 |
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