WO2003025080A1 - Die attach adhesives for semiconductor applications, processes for producing semiconductor devices and semiconductor devices produced by such processes - Google Patents

Die attach adhesives for semiconductor applications, processes for producing semiconductor devices and semiconductor devices produced by such processes Download PDF

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Publication number
WO2003025080A1
WO2003025080A1 PCT/US2002/026787 US0226787W WO03025080A1 WO 2003025080 A1 WO2003025080 A1 WO 2003025080A1 US 0226787 W US0226787 W US 0226787W WO 03025080 A1 WO03025080 A1 WO 03025080A1
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WIPO (PCT)
Prior art keywords
adhesive
composition
curable
die
adhesive composition
Prior art date
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Ceased
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PCT/US2002/026787
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English (en)
French (fr)
Inventor
Michael John Watson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
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Dow Corning Corp
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Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to KR1020047003874A priority Critical patent/KR100880090B1/ko
Priority to DE10297225T priority patent/DE10297225B4/de
Priority to JP2003529862A priority patent/JP2005503467A/ja
Publication of WO2003025080A1 publication Critical patent/WO2003025080A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2483/00—Presence of polysiloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07321—Aligning
    • H10W72/07327—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/231—Configurations of stacked chips the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/291—Configurations of stacked chips characterised by containers, encapsulations, or other housings for the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the invention disclosed herein deals with die attach adhesives and methods for their use, along with the devices that are obtained by the use of the methods.
  • the adhesives and the method for using them provides an interface between a chip (die) and the chip support.
  • the method includes creating a space between the chip and the chip support of a given sized opening.
  • curable elastomeric materials can be used to create a space between the semiconductor and its support, such construction being disclosed in the U.S. Patents of the prior art discussed infra.
  • the most common is the assembly of one or more semiconductor chips on a substrate such as polyimide film which forms part of a chip carrier package including a circuit panel or chip housing.
  • a chip carrier includes a dielectric layer with an array of terminals and may also contain leads.
  • the chip carrier is fastened to a semiconductor chip through the leads or wire bonds.
  • An elastomeric material is disposed between the chip and the flexible dielectric layer of the chip carrier.
  • the chip carrier and elastomeric material are also referred to as an "interposer” or “interposer layer", by those skilled in the art.
  • the leads or wire bonds of the chip carrier are bonded to the chip so that the terminals of the carrier are electrically connected to the contacts on the chip.
  • the entire structure can then be mounted to a substrate such as a circuit panel or chip housing.
  • the terminals of the chip carrier are electrically connected to contacts on the substrate.
  • the elastomeric layer provides resiliency to the individual terminals allowing each terminal to move as necessary to accommodate tolerances during testing and in the final assembly itself.
  • U.S. Patent 5,477,611 which issued on December 26, 1995 to Sweis, et al, which describes the manufacture of a chip device.
  • U.S. patent 5,148,266 which issued on September 15, 1992 to Khandros, et al; 5,346,861 which issued on September 13, 1994 to Khandros, et al, and 5,347159 which issued on September 13, 1994 to Khandros, et al, are based on the same essential disclosure and are also relevant for showing the component parts of chip assemblies and their current manufacturing processes.
  • U.S. 5,477,611 shows the use of liquid resins to create a gap between the chip and the substrate.
  • This material is injected as a liquid and then hardened (cured).
  • the disclosure shows that the material, as it reaches the edges of the chip configuration, creates a meniscus along all outside edges, that are exposed to the atmosphere, which meniscus cures prior to the final cure of the interposed layer. This "B-staging" of the edge through the meniscus creates an in-situ mold that contains the liquid between the chip and the substrate until the final cure takes place.
  • Japanese patent application HI 1-193829 filed July.8, 1999 in the name of Yamaka, et al, deals with die attach adhesives for bonding semiconductor chips to chip mounting components wherein the adhesive comprises a curable polymer composition containing a spherical filler as spacer particles with an average particle diameter of from 10 to 100 ⁇ m and a major axis to minor axis ratio of 1.0 to 1.5, and they are used in an amount in the range of about 1 to 900 ppm in those formulations.
  • Japanese Laid-Open Patent Application (Kokai) No. 7-292343 discloses an adhesive agent for a semiconductor device which is comprised of (A) an organo- polysiloxane having at least two silicon atom bonded alkenyl groups per molecule, (B) an organopolysiloxane having at least two silicon atom bonded hydrogen atoms per molecule, (C) an organosilicon compound having a silicon atom bonded alkoxy group, (D) an organic or inorganic spherical filler whose particle diameter is 10 to
  • Figure 1 is a drawing of a fully packaged device that can be manufactured by the use of the adhesive of this invention and is a full side view thereof.
  • Figure 2 is a schematic of the dispersion of the adhesive of this invention for use in the example.
  • Figure 3 shows a schematic of the die on the substrate with adhesive containing spacer beads and before the encapsulation.
  • Figure 4 shows a schematic of the die on the substrate with adhesive containing spacer beads and after completion of the polymeric packaging process.
  • Figure 5 is a schematic diagram of a possible dispersion of the die attach adhesive upon the application of pressure to the die as set forth in the processes of this invention.
  • Figure 6 is a schematic illustration of one of the methods of this invention that is the pre-cured polymeric spacer printed die method.
  • Figure 7 is a schematic illustration of another method of this invention that is the pre-cured polymeric spacer dispersed die method.
  • Figure 8 is a schematic illustration of another method of this invention that is the printed or dispensed die attach pad method.
  • Figure 9 is a schematic illustration of yet another method of this invention that is the printed or dispensed segmented pad method.
  • Figure 10 is yet another device of this invention that can be manufactured by the use of the adhesive of this invention in which there is shown a full side view of a semiconductor die that has been stacked on the top of another semiconductor die in a package.
  • an adhesive composition comprising a curable polymer and/or resin, an inorganic spacer filler in an amount sufficient to allow for good planarity between the semiconductor die and the attachment substrate, plus a low coefficient of thermal expansion filler, said combination providing optimum die attachment and provide improved chip adhesion performance.
  • a method for using such adhesive to manufacture chip devices and the disclosure of the chip devices per se.
  • the advantage of the processes disclosed herein is that because of the nature of the die attach adhesive of this invention, there is only required two to three process steps as opposed to five or more process steps when using the methods of manufacture of the prior art.
  • a curable adhesive composition comprising in combination a curable polymeric base material and contained in said polymeric base material, inorganic insulating particles having average particle sizes of 1 ⁇ m to 1000 ⁇ m and aspect ratios of the major axis to the minor axis of about 1.0 to 1.5 and, at least one low coefficient of thermal expansion filler, in an amount of at least greater than 50 weight percent, based on the amount of the curable polymeric base material, and present in sufficient quantities to obtain an adhesive with a linear thermal expansion coefficient before and after any glass transition temperature of less than 240 ⁇ m/m/°C, between -55°C and +200°C when measured at a heating rate of 5°C/minute, and wherein there is present less than 0.1 weight percent of the coefficient of thermal expansion filler having sizes in the range of 10 to 100 ⁇ m.
  • Still another embodiment of this invention is a process for joining at least two individual substrates, the process comprising applying an adhesive composition as described just above to at least one surface of at least one of the individual substrates and then mounting another individual substrate to the adhesive treated side of the substrate to form a laminate. Then pressure and/or temperature is applied to the laminate to disperse the adhesive between the layers until each of the substrates contact the largest inorganic insulator particles of the adhesive composition, and thereafter, the adhesive composition is cured. It is contemplated within the scope of this invention to apply pressure and heat at the same time and eventhough the application of pressure, and of heat, can take the form of two or more steps in the process, the preferred mode is to apply the pressure and the heat simultaneously.
  • curable base adhesive composition it is contemplated within the scope of this invention to provide any curable polymeric adhesive composition as the base material as long as the adhesive is capable of bonding the chip to any desired substrate.
  • curable polymeric compositions are known in the art and can be any of a curable silicone composition; a curable epoxy composition; a curable polyimide composition, or, a curable acrylic composition.
  • Preferred for this invention are curable epoxy and silicone compositions, and most preferred are curable silicone compositions.
  • Especially preferred are the compositions set forth and described in U.S. patents 5,977,226, that issued on November 2, 1999 to Dent et al, and U.S. patent
  • Low Coefficient of Thermal Expansion (CTE) fillers for purposes of this invention can be any filler which is compatible with the formulated product and which will in addition provide a reduced coefficient of thermal expansion.
  • Such CTE fillers are for example selected from metal oxides, such as boron nitride, aluminum oxide, aluminum nitride, and the like, and these aforementioned materials coated with polymeric materials or coupling agents, metal nitride, glass and other such inorganic electrical insulator particles. It is preferred that the particles have a size of less than 10 ⁇ m and are present in an amount greater than about 50 weight percent and in an amount sufficient to obtain an adhesive with a linear thermal expansion coefficient before and after the glass transition temperature, of less than 240 ⁇ m/m/°C between -55°C and +200°C when measured at a heating rate of 5°C/minute.
  • the mode of cure of the adhesive compositions of this invention is not critical, and can include cure mechanisms such as condensation reactions; addition reactions; ultraviolet radiation initiated reactions, and, free radical initiated reactions.
  • Preferred for the adhesive compositions of this invention are those that are cured by addition reactions and ultraviolet radiation initiated reactions, and especially preferred are those based on addition reactions, and most preferred are those based on addition reactions of the silicone compositions, wherein hydrogen bonded to silicon atoms of one molecule are added to unsaturated groups bonded on the silicon atoms of another molecule wherein the reactions are catalyzed by platinum catalysts.
  • the platinum catalysts are preferably those set forth and disclosed in U.S. patent 4,766,176 set forth Supra.
  • FIG. 1 in which there is shown fully packaged device 1 that has been prepared using the adhesive composition and methods of this invention, wherein there is shown the die 2, the circuitry substrate 3 which can be polyimide, epoxy-fiberglass, or some other substrate, which can be either a flexible or rigid material known in the art, the spacer particle 4, which for purposes of this invention can be essentially all of the same size, or of different sizes for separate, different, multiple layers, the adhesive 5, the center lead bonds 6, the coverlay 7, the encapsulant 8, and the solder balls 9, the process for manufacturing of which can be found infra..
  • the die 2 the circuitry substrate 3 which can be polyimide, epoxy-fiberglass, or some other substrate, which can be either a flexible or rigid material known in the art
  • the spacer particle 4 which for purposes of this invention can be essentially all of the same size, or of different sizes for separate, different, multiple layers
  • the adhesive 5 the center lead bonds 6, the coverlay 7, the encapsulant 8, and the solder balls 9, the process for manufacturing of which can be found in
  • FIG 10 there is shown yet another device package 11 of this invention that can be manufactured by the use of the adhesive of this invention in which there is shown a full side view of another device package 11 in which one semiconductor die 12 has been stacked on the top of the semiconductor die 2 to form said package 11.
  • the circuitry substrate 3 which can be flexible or rigid
  • the die attach adhesive 5 containing the spacer beads 4 between the die 2 and the substrate 3, along with lead bonds 6, the solder balls 9, and another layer of die attach adhesive 13.
  • the die attach adhesive 13 contains spacer beads 14, which for purposes of illustration of an embodiment of this invention said spacer beads 14 are smaller in size than the spacer beads 6 of the die attach adhesive 5.
  • the average size of the spacer beads (particles) can be different between the different levels, or can be essentially the same, depending on the need of the manufacturer.
  • Assembly of such a device 11 is done by applying the adhesive 5 that contains the spacer beads 6, to the circuit board 15, that has been previously surmounted by the substrate circuit 3. Then, the hot die 2 is placed on the adhesive 5 with enough force to spread the adhesive 5 uniformly under the die 2. High pressures are not needed as can be observed by reviewing the viscosity of the die attach adhesive of the examples.
  • the heat partially cures the die attach adhesive 5 and the spacer beads 6 to provide a mechanism to control the height of the die 2 from the surface of the substrate 3.
  • Another die 12 can then be added on top of the previously mounted die 2 by applying adhesive 13 on top of the first die 2.
  • the top die 12 is placed hot on the adhesive 13, allowing it to partially cure to hold the parts in place for subsequent wires 6 to be furnished in the bonding operations leading from the die 12 to the substrate.
  • Full cure of the die attach adhesives 5 and 13 is completed when an overmolding is done on top of the package 11. Once an overmolding is applied and cured, solder balls 9 are added to complete the packaging of the package 11.
  • Modulus at break, elongation at break, and tensile strength at break were determined in the following manner: tensile bars were cut from molded slabs and were tested at a pull speed of 20 in./min. on a Monsanto Tensometer 2000 with a lkN load cell. This procedure is described in detail in ASTM D412 using the 0.25 inch width die to cut the tensile bars.
  • volume resistivity was measured at room temperature using a guarded electrode method described in ASTM D257-99.
  • Specific Gravity measurements were taken using a wet/dry balance technique outline per ASTM D792. Test samples were molded, cured, and cut into slabs of approximately one inch by one inch.
  • Dielectric Constant and Dissipation Factors were measured at the specified frequency using a model 1615-A (Schering type) capacitance bridge, Type 722D condenser, Model 1316 oscillator, Type 1690 solid sample holder, and Type 1401 NIST Air Capacitance standard, all purchased from General Radio Co., Poway, CA. These measurements were made per ASTM D 150 using cured molded slabs.
  • Modulus, elongation, tensile strength, volume resistivity, specific gravity, durometer, dielectric constant, dissipation factor, dielectric strength, and CTE test samples were all taken from molded slabs of 10 inch wide by 10 inch long by 0.090 inches thick, that were cured for 1 hour at 150°C in a Dake Press at 10 tons pressure using aluminum chase molds. Samples were cut from these molded slabs as indicated or per ASTM standards relating to each test. [00051] Placement of adhesive for die placement performance testing was performed by dispensing, printing, or placement of small amounts on a substrate using a 0.25 inch wide stainless steel spatula.
  • Example 1 This example demonstrates the preparation of one of the compositions according to the present invention.
  • the following components (a) and (b) were heated to the indicated temperature and then mixed one hour until uniform at 25 °C while the mixture slowly cooled to comprise Blend A at 60°C: a. 99.66 parts of trimemylsUoxy-terminated dimethylmethylhydrogen siloxane containing an average of five HMeSiO 2/2 units and three Me 2 SiO /2 units per molecule and having a viscosity of 4.8 x 10 " Pas and, b. 1.98 parts of 2-phenyl-3-butyn-2-ol.
  • the example adhesive composition consisted of the following components: (c ) 466.39 parts of a resin consisting essentially of ⁇ (CH 3 ) 2
  • the adhesive described was used to assemble a Tessera TV-62 center lead bond ⁇ BGA® daisy chain silicon test die (Tessera Inc., San Jose, CA) to a circuitry substrate 3 (in this case, polyimide TAB tape substrates) for reliability testing.
  • Figure 2 shows a schematic of the adhesive pattern as it was printed through a 0.006 inch thick stainless steel stencil with 0.025 inch diameter laser cut holes located where the adhesive 5 was to be deposited on to the circuitry substrate 3 (in this case, polyimide TAB tape).
  • the printed dots 10 of die attach adhesive 5 are approximately 0.030 inches in diameter.
  • FIG. 1 shows a clear schematic drawing of the die 2 placed on the polyimide TAB tape circuitry 3 with the spacer 4 within the filled silicone adhesive 5 holding the die 2 at a specific height off the surface of the polyimide TAB tape circuitry substrate 3.
  • FIG 4 shows the die 2 after completion of the polymeric packaging process.
  • thermosonic lead bonding was then performed to bond the center lead bonds 6 to the die 2.
  • a removable tape 7 coverlay
  • encapsulant 8 was placed on the bottom of the polyimide TAB tape circuitry substrate 3 to prevent encapsulant 8 from flowing through when it was applied.
  • the second method is the use of spacers 4 that are printed and then the die attach adhesive 5 is dispensed on top and surrounding the cured spacers. See Figure 7 wherein there is shown the die 2, the printed spacers 4, and the uncured dispensed die attach adhesive 5 surrounding the printed spacers 4. The final product is shown as 19.
  • the third method is the use of a pad adhesive. With reference to Figure 8, there is shown the spacer beads 4, the pad of adhesive 5, a spacer 20 that is not in planer alignment with the spacer beads 4, the polyimide film 3, and the finished product 21.
  • the fourth method the printed or dispensed segmented pad method can be found illustrated in Figure 9, wherein uncured stencil printed die attach dots 22 are placed on the polyimide film 3. Thereafter, the die 2 is pressed onto the adhesive and is stopped a predetermined distance from the polyimide film by the spacers 4. The composite is then cured to give the product 23. [00067] When these methods are used in the prior processes it can be observed from the following PROCESSING STEPS TABLE that there are more process steps, or there are major inadequacies of the method, and they tend to take more time to execute.
  • compositions of the instant invention do not require the extra steps, nor the length of time to execute the steps necessary to obtain a die attach, or do not suffer from the complications of regulating time, temperature, pressure and the rheology of the base material.
  • the die attach adhesive 5 can be applied as dots, by dispensing or printing the dots, or dispensed to form a pad and the heat and pressure can be applied simultaneously.
  • inventive methods herein are shown in the PROCESSING STEPS TABLE as A and B, it being understood that the prior art methods could also be used with the inventive compositions of this invention.
  • ** A is a composition of this invention wherein dots are used as the spacer material.
  • ** B is a composition of this invention wherein pads are used as the spacer material.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
PCT/US2002/026787 2001-09-17 2002-08-23 Die attach adhesives for semiconductor applications, processes for producing semiconductor devices and semiconductor devices produced by such processes Ceased WO2003025080A1 (en)

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KR1020047003874A KR100880090B1 (ko) 2001-09-17 2002-08-23 반도체용 다이 부착 접착제, 반도체 장치의 제조 방법 및이 방법으로 제조된 반도체 장치
DE10297225T DE10297225B4 (de) 2001-09-17 2002-08-23 Plättchenbefestigungsklebstoffe insbesondere für Halbleiteranwendungen
JP2003529862A JP2005503467A (ja) 2001-09-17 2002-08-23 半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス

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US09/954,528 US6784555B2 (en) 2001-09-17 2001-09-17 Die attach adhesives for semiconductor applications utilizing a polymeric base material with inorganic insulator particles of various sizes
US09/954,528 2001-09-17

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US20030057538A1 (en) 2003-03-27
DE10297225T5 (de) 2004-11-04
KR100880090B1 (ko) 2009-01-23
TW569363B (en) 2004-01-01
KR20040044936A (ko) 2004-05-31
US6784555B2 (en) 2004-08-31
JP2005503467A (ja) 2005-02-03
JP2011157559A (ja) 2011-08-18
DE10297225B4 (de) 2009-12-31

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