TW569363B - Die attach adhesives for semiconductor applications efficient processes for producing such devices and the devices per se produced by the efficient processes - Google Patents

Die attach adhesives for semiconductor applications efficient processes for producing such devices and the devices per se produced by the efficient processes Download PDF

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Publication number
TW569363B
TW569363B TW091119353A TW91119353A TW569363B TW 569363 B TW569363 B TW 569363B TW 091119353 A TW091119353 A TW 091119353A TW 91119353 A TW91119353 A TW 91119353A TW 569363 B TW569363 B TW 569363B
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Taiwan
Prior art keywords
adhesive
hardenable
patent application
scope
item
Prior art date
Application number
TW091119353A
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English (en)
Inventor
Michael John Watson
Original Assignee
Dow Corning
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Publication of TW569363B publication Critical patent/TW569363B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
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    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
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    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Description

569363 A7 _____B7_____ 五、發明說明（/ ) 發明領域 在此所揭露之本發明係討論到晶粒附著黏合劑以及它 們使用之方法，且倂同藉由該方法之使用所獲得之元件。 使用半導體晶片做爲一例子，該黏合劑以及使用其之 方法可提供一介於一晶片（晶粒）以及一晶片支持物之間 的介面。該方法係包括製造一介於該晶片以及一給定尺寸 開口之晶片支持物之間的空間。 發明背景 在半導體組件之建構中，已發現到可硬化彈性體材質 能用來製造一介於該半導體晶片以及它的支持物之間的空 間，如此建構係揭露在底下討論的習知美國專利中。最常 使用係一或是更多半導體晶片在一基板之組件，且該基板 比如聚醯亞胺膜且該膜形成包括一電路面板或是晶片殼之 晶片載體封裝的一部份。 一晶片載體係包括一具有一端點陣列之介電層以及也 可包含引線。該晶片載體係藉由引線或線接頭而固著至一 半導體晶片。一彈性體材質係置放在介於該晶片以及該晶 片載體之彈性介電層之間。該晶片載體以及彈性體材質亦 如那熟悉本行業者參考爲「插入物」（interposer)或「插入 層」（interposer layer)。該晶片載體之引線或是線接頭係接 合至該晶片，以使得該載體之端點係電性地連接至基板上 之接觸(contacts)。整個結構然後可以裝於例如電路面板或 是晶片殼的基板。晶片載體之端點係電性地連接至基板上 3 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公H " 一 --------------------訂---------線— (請先閲讀背面之注意事項再填寫本頁) 569363 A7 ___ B7__ 五、發明說明（2 ) 之接觸。該彈性體層係提供個別端點之回彈力，以允許每 一端點在測試期間以及最後組件本身中如所需的移動以調 節誤差容忍度。 先前技術 以上所提出之詳細資訊能在美國專利第5,477,611號中 發現，且該專利係於1995年12月26日發給Sweis等人且 敘述一晶片元件之製造。 於1992年9月15日發給Khandros等人之美國專利第 5，148,266號、於1994年9月13日發給Khandros等人之美 國專利第5,346,861號以及於1994年9月13日發給 Khandros等人之美國專利第5,347，159號皆爲基於基本上相 同之揭露，並且也相關於揭示晶片組件之零部件以及它們 目前之製程。美國專利第5,477,611號揭示液體樹脂之使用 ，以製造一介於該晶片以及該基板之間隙。此一材質係如 一液體注入然後硬化（或熟化）。所揭露者顯示當該材質到 達該晶片架構之邊緣時，則該材質製造出一沿著全部外側 邊緣之彎月面，該外側邊緣係曝露至大氣，該彎月面在該 插入層之最後硬化之前就硬化了。此一經由該彎月面之邊 緣「B階段作用」（B-staging)可製造一原地(in-situ)模，其 包含介於該晶片以及該基板之液體直到最後之硬化發生爲 止。 除了使用一可硬化液體做爲一插入物材質之揭露外’ 在上面所提到之專利並未提到任何有關於如本發明所提供 _4_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------1------1----訂-----1---^ IIAWI (請先閱讀背面之注意事項再填寫本頁) 569363 A7 _B7_ 五、發明說明（）） 之製造一介於該晶片以及一基板間之間隙。 關於習知技術討論到使用特殊材質做爲間隔物以製造 介於該晶片以及該基板之間隙，吾人應察覺到於1999年7 月8日Isshiki等人申請的日本專利申請案第H11-193828號 ，其中揭露一晶粒附著黏合劑之使用，且該黏合劑係基於 一可硬化聚合物組成物，其包含具有一從100至1000/zm 之平均粒子直徑以及一主要軸與次要軸之比値係從1.0至 1.5的球狀塡充物。在其中所揭露以及所強調者係在組成物 中使用無機球狀塡充物之特定尺寸粒子做爲間隔物。 類似地，於1999年7月8日Yamaka等人所申請之曰 本專利申請第H11-193829號討論到晶粒附著黏合劑以用於 接合該半導體晶片至晶片安裝零件，其中該黏合劑係包括 一可硬化聚合物組成物，且該組成物包括一做爲間隔物粒 子之球狀塡充物，又該粒子之平均粒子直徑係從10至100 //m以及一主要軸與次要軸之比値係從1.0至1.5，並且這 些粒子係以在它們配方中之大約1至900ppm之範圍的量而 予以使用。 最後，日本公開專利申請案(Kokai)第7-292343號揭露 一用於半導體元件之黏合劑，其係由下列所組成：（A)每分 子具有至少兩個接合矽原子之烯烴基的有機聚矽氧烷，（B) 每分子具有至少兩個接合矽原子之氫原子的有機聚矽氧烷 ，（C)具有接合矽原子之烷氧基的有機矽化合物，(D)有機 或是無機球狀塡充物，其粒子直徑係從10至100//m以及 它的主要直徑與次要直徑之比値係從1.0至1.5，以及(E)催 _5 __ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -------訂---------線 569363 A7 ____B7_______ 五、發明說明（f ) 化量的鈾或鉑化合物。 沒有一個上述參考案認定出用於本發明所提出之重要 參數，以用於一基於無機絕緣粒子做爲間隔珠的成功晶粒 附著黏合劑。 發明內容 本發明在此所揭露者係一黏合劑組成物，其包含：可 硬化聚合物以及/或是樹脂，無機間隔塡充物，其係以一 足夠的量來允許介於該半導體晶粒以及該附著基板之間有 良好平坦度，再加上低熱膨脹係數之塡充物，該組合提供 最佳晶粒附著並且提供改良之晶粒黏合功效。 同時，本發明亦揭露一使用該黏合劑以製造晶片元件 之方法，以及該晶片元件本身之揭露。在此所揭露製程之 優點爲由於本發明之該晶粒附著黏合劑之本質之故，相對 於於當使用習知製造之方法時需要五或更多製程步驟而言 ，僅需要二至三製程步驟。 在此所揭露以及所主張的申請專利範圍係一可硬化黏 合劑組成物，其結合地包括一可硬化聚合物基礎材質以及 包含在該聚合物基礎材質之無機絕緣粒子，該粒子係具有 1/zm至1000//m平均粒子尺寸以及主要軸與次要軸之大約 爲1.0至1.5的縱橫比，以及包括至少一低熱膨脹係數的塡 充物，其量以基於該可硬化聚合物基礎材質的量爲至少大 於50重量百分比，並且出現足夠量以當在介於_55°C與 +200°C間以5C/分鐘之加熱速率測量時，在任何玻璃轉換 6 氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " (請先閱讀背面之注意事項再填寫本頁) 拳 訂-------- -線 ΙΦ----------------------- 569363 A7 ____B7___ 五、發明說明（f ) 溫度之前以及之後獲得一具有低於240/z m/m/°C之線性熱 膨脹係數之黏合劑，其中尺寸範圍爲10至100//m之低熱 膨脹係數塡充物之量低於0.1重量百分比。 此外，此發明之另一實施例係一半導體元件，其中至 少兩個別的基板係藉由正如上面所描述之黏合劑組成物予 以連接及結合。 本發明尙有另一實施例係一用於連接至少兩個別基板 之製程，該製程係包括施加正如上面所述之黏合劑組成物 至該個別基板之至少一個的至少一表面，然後安裝另一個 別基板至該基板之黏合處理側，以形成一疊層。然後，壓 力以及/或是溫度施加至該疊層，以分散介於各層間之黏合 劑，直到每一個基板接觸該黏合劑組成物之最大的無機絕 緣體粒子，之後，該黏合劑組成物係加以硬化。同時地加 壓力以及熱仍認爲係在本發明之範疇內，以及縱使壓力以 及熱的施加可以採取在製程中之二或更多步驟的形式，但 較佳的模式則爲同時地施加該壓力以及熱。 現回至該可硬化基礎黏合劑組成物，只要黏合劑能夠 接合該晶片至任何所需基板，則提供任何可硬化黏合劑組 成物做爲該基礎材質係認爲仍在本發明之範疇內。如此可 硬化聚合物組成物爲業者所習知的，並且可以是一可硬化 矽氧烷組成物、一可硬化環氧樹脂組成物、一可硬化聚醯 亞胺組成物或是一丙烯酸酯組成物之任何一者。用於本發 明之較佳者係可硬化環氧樹脂以及矽氧烷組成物，以及最 佳者係可硬化矽氧烷組成物。 __7_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------Φ-------訂---------線--#- (請先閱讀背面之注意事項再填寫本頁) 569363 A7 _ B7_ 五、發明說明（6 ) 特別較佳者爲於1999年11月2日發給Dent等人之美 國專利第5,977,226號、在1988年8月23日發給Lee等人 之美國專利第4,766，176號及在1991年5月21日發給 Atsushi等人之美國專利第5,017,654號所提及的組成物， 該等組成物以及用於準備如此組成物之教導皆在此倂入做 爲參考。 用於本發明之目的之低熱膨脹係數（Cofficient of Thermal Expansion，CTE)塡充物可以是任何相容於該配方 產品的塡充物，並且其額外提供一減少的熱膨脹係數。如 此CTE塡充物係例如從金屬氧化物(比如氮化硼、氧化鋁、 氮化鋁以及類似物，以及鍍有聚合物材質或耦合劑的這些 前述材質）、金屬氮化物、玻璃及其他此種無機電絕緣粒子 所選出。較佳的是該粒子具有低於l〇#m之尺寸，以及存 在的量大於50重量百分比，而且其量足以獲得當以一加熱 速率爲5°C/分鐘量測時在玻璃轉換溫度之前及之後具有低 於240//m/m/°C之一線性熱膨脹係數的黏合劑。 如此塡充物的好處對於那些熟悉本行業者而言倂著在 下面說明書所提出之例子所提供的資訊將會變成明顯的。 熟悉本行業者應注意到本發明之黏合劑組成物之硬化 模式並不重要，並且能包括硬化機制，比如凝結反應、加 成反應、紫外線輻射初始反應以及自由基初始反應。 用於本發明之黏合劑組成物的較佳者係加成反應以及 紫外線輻射初始反應所硬化者，以及特別佳者係基於加成 反應者，以及最佳者係基於矽氧烷組成物之加成反應者， _8 __ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線—AWI (請先閱讀背面之注意事項再填寫本頁) 569363 A7 ___Β7 __ 五、發明說明（7 ) 其中接合至一分子之矽原子的氫係加入接合在另一分子之 矽原子上的不飽和基，其中該反應係鉑觸媒所催化。該鉑 觸媒較佳地爲在上面所提及之美國專利第4,766，176號中所 提出以及揭露者。 實施方式 現回至本發明之元件，並應參考至圖1，其中揭示已 完全封裝的元件1，且該元件係藉由使用本發明之黏合劑 組成物以及方法而予以備製，又其中揭示有晶粒2、電路 基板3，該電路基板3可以是聚醯亞胺、環氧樹脂一玻璃 纖維或是一些其他基板，其可以是在業界所熟知之可撓性 或剛性之材質。圖1又揭示出間隔物粒子4，且該粒子爲 了本發明之目的可以基本地全部爲同一尺寸或不同尺寸， 以用於分開且不同之多重層。又揭示出黏合劑5、中心引 線接合6、蓋板7、包封物8以及焊球9，它們的製造過程 能在下面中找到。 在圖10中，其揭示有本發明之另一元件封裝11，該 封裝11能藉由本發明之黏合劑的使用而予以製造，又在圖 10中揭示元件封裝11之完全側視圖，其中一半導體晶粒 12已疊堆在該半導體晶粒2之頂部上以形成該封裝11。 因而，亦揭示有該電路基板3，其可以是可撓的或是 剛性的，其包含介於該晶粒2以及該基板3間之間隔珠4 的晶粒附著黏合劑5，同時再揭示有引線接合6、焊球9以 及另一層晶粒附著黏合劑13。該晶粒附著黏合劑13包含 一 —___9 _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------訂--------- 線·φ (請先閱讀背面之注意事項再填寫本頁) 569363 A7 ___B7___ 五、發明說明（） 間隔珠14，且爲了解說本發明之實施例，該間隔珠14在 尺寸上係小於該晶粒附著黏合劑5之間隔珠4。熟悉本行 業者應注意到該間隔珠（粒子）之平均尺寸可以依據製造者 之需求而在不同層間是不同的，或是可以基本上是相同的 〇 如此一元件11之組合可施加該黏合劑5至該電路板 15予以完成，且該黏合劑包括該間隔珠6，又該電路板15 已事先在其上裝有電路基板3。然後，該熱晶粒2係以足 夠力置放在該黏合劑5之上，以均勻地將黏合劑5分散在 該晶粒2之底下。就如藉由觀察範例之晶粒附著黏合劑之 黏滯性可知，高壓力係不需要。 該熱部份地硬化該晶粒附著黏合劑5以及該間隔珠4 ，以提供一機制來控制自該基板3之表面之晶拉2的高度 。另一晶粒能夠接著藉由施加在該第一晶粒2上之黏合劑 13而加至已事先安裝之晶粒2的頂部上。該頂部晶粒12 係熱熱地放在該黏合劑13上，其可允許黏合劑部份地硬化 ’以固持該部件在一處以用於使後續的線6在接合操作中 自該晶粒12引線至該基板。當一上模造係完成在該封裝 11之頂部上時，則該晶粒附著黏合劑5和13之完全硬化 係已完成。一旦施加及硬化一上模造，則添加焊球9以完 成該封裝11之封裝。 在下面之例子中，本發明之晶粒附著黏合劑組成物係 更詳細地解說，其中除非另有其他的指示，則所有部份及 百分比係以重量計。該等例子係呈現以更進一步解說本發 _____ίο____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------訂---------線—AWI (請先閱讀背面之注意事項再填寫本頁) 569363 ΚΙ __Β7 __ 五、發明說明（） 明，並且並不認爲可以任何方式限制本發明。 黏滯性之量測係使用二方法來做成。一方法係使用一 具有40mm直徑之鋁板以及在特定切變速率之0.05%固定應 變下之RDAII平行板流速計，以量測於25°C下未硬化組成 物之特性。另一方法係使用於25°C下之2公分平板、1500 達因(dyne)固定力量在CP-20壓縮流速計來測量其特性，且 該流速計係來自座落在德拉瓦州Newcastle市之TA儀器公 司。 硬化放熱峰値溫度係使用一精工(Seiko)熱差掃瞄量熱 計220C型而測得的，其藉由在一鋁樣品盤中以10°C/分鐘 速率自25°C至200°C加熱20至25mg的材質，加熱時亦以 25至30cc/分鐘之氯氣(高純度壓縮氦氣，在PA州Radnor 市之Airgas公司的UN 1046)加以淸洩，並且以一空鋁樣品 盤做爲參考。（精工儀器，Torrance市，加州） 該供應者供應在此所使用之塡充物之所有粒子尺寸以 及表面面積。該塡充物之表面面積係藉由量子色單吸收 (Quantachrome Monosorb)B.E.T·方法而測得。 在此所使用之無機間隔物粒子係使用具有特定開口之 泰勒(Tyler)金系列全高8英吋直徑之線網孔篩而予以分開 〇 在斷裂之模數(Modulus)、在斷裂之延長率以及在斷裂 之抗張強度係以下述之方式予以測得：張力條係從模造平 板片切成，並且以lkN負載格、20英吋/分鐘之拉速下在 Monsanto張力計上予以測試。此一程序係詳細地描述在 11 尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------11----訂------I--線 — (請先閱讀背面之注意事項再填寫本頁) 569363 A7 _B7_____ 五、發明說明（θ ) ASTM D412，其使用0.25英吋寬度模來切割該張力條。 體積電阻率係在室溫下使用一在ASTM D257-99中所 述之監視電極方法而測得。 比重量測係使用一經由ASTM D792所描述之濕/乾平 衡技術而得。測試樣品加以模造、硬化以及切成大約1英 吋乘1英吋之平板片。 硬度之測試係根據ASTM D2240使用Shore A硬度計 以及71200 Conveloader，且此兩者係來自Shore儀器製造公 司。用於測試之樣品係加以模造、硬化以及切成爲大約1 英吋乘1英吋之平板片，然後在測量硬度之前疊堆至大於 0.25英吋。 介電常數以及耗散因素係在特定頻率下使用1615-A型 (Schering型)之電容橋、722D型電容器、1316型振盪器、 1690型固態樣品保持器以及1401型NIST空氣電容標準而 測得，且以上皆係從加州Poway市General Radio公司所購 得。這些量測係根據ASTM D150使用硬化模造平板片而做 的。 樣品之介電強度係根據ASTM D149使用一自伊利諾州 Lake Forest市Associated硏究公司所購得之110仟伏Hypot 機型號4862M2而量測。已硬化的模造平板片係使用在此 一測試。 線性熱膨脹係數(CTE)結果係以一 TA儀器2940型 TMA(熱機械分析器)以及使用一流速爲l〇〇cc/分鐘之氮氣淸 洩，和以5°C/分鐘加熱速率從25°C至200°C而收集。該測 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — — — — —---11111 ^_wl------11 — — — — 11 ^ I i^wi (請先閱讀背面之注意事項再填寫本頁) 569363 A7 __ B7___ 五、發明說明（ίί ) 試樣品係已模造、硬化以及使用一 0.25英吋直徑模切開。 模數、延長率、抗張強度、體積電阻率、比重、硬度 計、介電常數、耗散因素、介電強度以及CTE測試樣品係 都從10英吋寬乘10英吋長乘0.090英吋厚之模造平板片取 得，且該平板片係在150°C及使用鋁刻模在10噸壓力之 Dake Press中爲期1小時之硬化。樣品係從這些已模造平板 片如依指示地或根據相關於每一測試之ASTM標準而切開 〇 用於晶粒置放功效測試之黏合劑的放置係藉由使用 0.25英吋寬不銹鋼刮勺來分配、印刷或放置一小量在一基 板上來完成。如果執行未硬化黏合劑之分配，則使用 CAM/ALOT 1818 分配器(麻州 Haverhill 市，Camalot 系統公 司）。如果執行未硬化黏合劑之印刷，則使用Speedline MPM(麻州Franklin市，Speedline科技公司）SPM型印刷器 範例 例子1 : 此一例子展示了根據本發明之組成物的備製。 下面之成分⑷及⑻係加熱至該指示溫度，然後相混合 1小時直至在25°C下爲均勻，同時該混合物慢慢地冷卻以 包含在60°C之混合A : (a)99.66部份之以三甲基矽氧基爲末端之二甲基甲基 氫矽氧烷，其每分子平均包含五個HMeSiOw單元以及三個 13 一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —I—----— ^9———訂·-—I—線 (請先閱讀背面之注意事項再填寫本頁) 569363 A7 ____B7__ 五、發明說明（A )
Me2SiOm單元，以及具有4.8Xl(T3Pa· s之黏滯度，以及 (b) l.98部份之2-苯基-3-丁基-2-醇。 該例子的黏合劑組成物係由下列成分所組成： (c) 466.39 部份之樹脂，其基本上由 {(CHshCHfCHSiO^ 單元、{(CH3)3Si〇}w2 單元以及 SiCU/2 單 元所組成，其中所有三有機矽氧烷單元與Si〇4/2單元之莫 耳比大約爲0.7 : 1。 (d) 88.83部份之以二甲基乙烯基矽氧基爲末端之聚二 甲基矽氧烷，其具有平均830的聚合化程度以及55Pa · s 之黏滯度。 (e) 1027.58部份以二甲基乙烯基矽氧基爲末端之聚二甲 基矽氧烷，其具有平均434之聚合化程度以及2Pa · s的黏 滯度。 (f) 18.6部份之碳黑粉末，其具有45奈米之平均粒子尺 寸。 (g) 92.4部份之上面之混合A。 (h) 180部份之聚二甲基矽氧烷流體處理過的燻矽土。 (i) 3600部份之球狀熔合矽土，其具有介於1.〇至1.5 間之縱橫比以及5微米之平均粒子尺寸。 (j) 450部份之球狀熔合砂土，其具有〇.i〇mrn之平均尺 寸以及介於1.0至1.5間之縱橫比，且該矽土已從介於125 微米篩以及106微米篩之間來收集。 (k) 76.2部份之1，3-二乙基-1，1，3,3-四甲基二砂氧院之鉑 錯合物。 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------—--丨丨丨丨訂------11I (請先閱讀背面之注意事項再填寫本頁) 569363 A7 ___B7____ 五、發明說明（〇 ) 成分(c)、（d)、（e)、（f)、（h)以及⑴係添加入一剪切混 合器以及均勻地混合。該混合物係接著加熱至150°C，同 時仍繼續攪拌。該混合物維持在此一溫度1小時，該混合 物然後冷卻至低於50°C，但此時混合仍繼續。成分(g)、（j) 以及(k)然後與先前的成分在介於25°C以及50°C間加入並使 用適當的混合而相混合，以獲得全部成分之均勻混合，以 提供該最終黏合劑。該測試結果能發現在表1。 在其他之封裝基板中，所描述黏合劑係用來組合一 Tessera TV-62中心引線接合//BGA®菊花鏈矽測試晶粒(其 爲加州聖荷西，Tessera公司出產）至一電路基板3(在此一 情況是聚醯亞胺TAB帶狀基板），以用於可靠度測試。圖2 揭示該黏合劑圖案之一槪略圖，且顯示該圖案係印刷穿過 0.006英吋厚的不銹鋼模板，且該模板具有0.025英吋直徑 之雷射切開的洞，又該洞係座落在該黏合劑5即將要沈積 在該電路基板3上之位置(在此一狀況爲聚醯亞胺TAB帶) 。該晶粒附著黏合劑5之印刷點10在直徑上大約爲0.030 英吋。這些點係印刷在該聚醯亞胺TAB帶狀電路基板3之 頂部上，接著該晶粒2置放在該未硬化黏合劑點10之頂部 上’在大約200°C下停留時間爲500毫秒，並以足夠力(就 $口_由觀察該等例子之晶粒附著黏合劑的黏滯度而知高壓 力係不需要)來使該晶粒2緊密接觸在該黏合劑5內之該間 隔珠4。該晶拉2係藉由虛線而放置在如圖2中所示之位 ® 〇 °在該晶粒2之放置期間，熱部份地硬化該黏合劑5 以固持該晶粒在一處直至後硬化發生爲止。 __15_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)
I -------訂---！丨丨！線 I 569363 ΚΙ _____Β7__ 五、發明說明（# ) 圖3揭示一淸礎槪略圖，其顯示該晶粒2已放置在該 聚醯亞胺TAB帶狀電路3之上，其在已塡充之矽氧烷黏合 劑5內有間隔物4，其固持該晶粒2離開該聚醯亞胺丁AB 帶狀電路基板3在一特定高度處。 圖4係揭示在經完成該聚合物封裝製程之後的晶粒2 。在該晶粒2附著後，接著執行熱聲(thermosonic)引線接合 ，以接合該中心引線接合6至該晶粒2。一可移除帶7(蓋 板)放置在該聚醯亞胺TAB帶狀電路基板3之底部上，以 當包封物8施加時可防止它流過。接著該引線接合的係 Dow Corning®6820微電子包封物8(其係一具有從50°C至 150°C之等於195ppm/°C之線性熱膨脹係數的矽氧烷包封物) 在25°C下分配流至該晶粒2底下及其附近。一旦該包封物 8已完全地流至該晶粒2底下及其附近，該全部合成封裝1 在15(TC下加熱1小時，以後硬化該晶粒附著黏合劑5以 及完全地硬化該包封物8。然後移除該蓋板7。最終地，在 所有該聚合物封裝材質皆硬化後，該焊球9置放在該聚醯 亞胺TAB帶狀電路基板3的底部上，以完成如在圖1中所 示之封裝。 如圖1所示之該封裝在環境應力下之測試產生如在表 Π中所觀察到之結果。此外，分配作用顯示出非常小尾曳 ，以及印刷能在許多不同印刷速率及壓力下完成，並在每 一者獲得良好結果。（方法爲尿烷橡膠滾軸，20英吋乘20 英吋模版框，0.006厚模版，0.025英吋洞，壓力從8至30 膀，以及速率係從1英吋/分鐘至2英吋/分鐘）。晶粒2之 一 __ 16___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線皿 (請先閱讀背面之注意事項再填寫本頁) 569363 A7 _____B7 __ 五、發明說明（C) 高度係控制在0.005英吋，並在各封裝間具有少於0.0005 英吋的變化量，以用於可靠度測試。 除了分配或是印刷黏合劑之小點10以及以一包封物8 塡充該晶粒底下之剩餘面積外，在該晶粒底下之整個面積 能以該晶粒附著黏合劑5而予以塡充，以消除在該包封期 間需要將該包封材質流至該晶粒底下所花之大量時間。如 果一比如在圖5中所示之「X」形圖案係藉由分配一對角 線16然後跨過該第一線16分配另一對角線17而予以製成 的話，則該晶粒附著黏合劑5便形成在其中間之一小丘’ 且如果黏合劑使用適當的量的話，該小丘接著可被壓出至 該晶粒2之邊緣。標號「AF」之箭頭係揭不該晶粒黏合劑 5之次要流動的方向。許多圖案可依照該晶粒之外形而使 用。調整該矽土塡充物程度可允許依照該封裝類型而定之 用於各種晶粒的施加壓力。 比較性範例： 接下來的例子解說重要的製程步驟’且該步驟若使用 本發明之製程則可自習知之元件封裝製程中予以消除’仍 允許已封裝部件之良好可靠度。 元件封裝已藉由使用印刷矽氧烷間隔物予以建造。然 而，晶粒附著黏合劑必須印刷在該間隔物上或分配在間隔 物之間，以達到附著該晶粒之目的。墊黏合劑需要額外的 步驟以移除在此所使用之襯墊。接下來的「製程步驟表」 揭示了製程步驟，且這些步驟能被消除’如果本發明之組 17____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) Φ-------^---------^ίφ----------------------- 569363 A7 ______B7____ 五、發明說明（4) 成物係用來取代來自習知之標準元件封裝產品。 現存有四種執行晶粒附著之習知方法，其中一個在此 將不予討論，此乃因該方法係使用不含間隔珠之晶粒附著 材質。使用該等方法之全部習知製程必須控制該晶粒距該 電路基板的高度，以確保引線接合之可靠度維持良好。該 引線之外形係直接地相關於該可靠度，以及距該基板的高 度控制該引線的外形。在下面所提出之方法解說本發明之 晶粒附著黏合劑。 在第一方法中，即預硬化聚合間隔物印刷晶粒附著方 法’參考圖6，間隔物4係被印刷以及接著硬化，然後該 晶粒附著黏合劑5印刷在已硬化間隔物4之頂部上。當晶 粒2裝在晶粒附著黏合劑5上時施加壓力P至晶粒2。同 樣也揭示在圖6中，爲了置向的目的，而有該聚醯亞胺基 板3、該晶粒2，並且亦揭示有一橫向運動之箭頭L，移動 至該圖之右側以顯示出該裝配線之移動方向，來提供最終 產品18。 該第二方法，即預硬化聚合間隔物分配晶粒附著方法 ，係使用該間隔物4，且該間隔物4係被印刷，然後該晶 粒附著黏合劑5係分配在頂部上並且圍繞已硬化的間隔物 。請視圖7，其中有顯出該晶粒2、已印刷間隔物4以及圍 繞已印刷間隔物4之未硬化分配的晶粒附著黏合劑5。該 最終產品係揭ηχ如標號19。 第三方法，即印刷或分配晶粒附著墊方法，一非常受 歡迎之方法，係使用一墊黏合劑。請參考圖8，其揭示有 __18__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ϋ ϋ I ϋ ϋ n^*eJI n I ϋ *1 ·1 I V I ϋ ϋ ϋ ϋ n ϋ ϋ ϋ I H ^1 ·1 n —β ϋ I - 569363 A7 ____B7___ 五、發明說明（q ) 間隔珠4、黏合劑5之墊、不在一平面內與間隔珠4相對 準之間隔物20、聚醯亞胺膜3以及已完成產品21。 第四方法，即印刷或分配分段墊方法，能發現在圖9 之解說中’其中未硬化之模版印刷晶粒附著點22係置放在 聚醯亞胺膜3上。之後，該晶粒2壓至該黏合劑上，並且 藉由該間隔物4而與該聚醯亞胺膜停留在一預定距離。該 複合物接著硬化以產生產品23。 當這些方法係使用在習知製程中，吾人可從下面之「 製造步驟表」中觀視出存有更多製程步驟，或方法有主要 的不適性，以及這些製程將花費更多時間來執行。本發明 之組成物並不要求額外步驟，亦不要求較長時間以執行所 需步驟來獲得一晶粒附著，或是並不遭受調整時間、溫度 、壓力以該基礎材質之流動等的複雜性。該晶粒附著黏合 劑5能施加爲如點狀，其係藉由分配或印刷該點，或是分 配以形成一墊，以及熱及壓力能同時地施加。在此之本創 造性方法係揭示在該「製程步驟表」中的A及B，吾人應 理解到該習知方法亦能夠使用本發明之創造性組成物。 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ϊ --------訂--------- 線----------------------- 569363 A7 _B7 五、發明說明（Μ ) 表1 量測特性 觀測値 黏滯度@1弧度/秒 220,600 poise 硬化放熱峰値溫度 121.3T： 從50°C至150°C之線性熱膨脹係數 154ppm/〇C 斷裂時之張力強度 1310 psi 斷裂時之延長率 25.3% 模數@25%延長率 30.5 psi 比重 1.52 硬度 91.5 Shore A 介電常數100Hz 2.9 介電常數100kHz 2.9 耗散因素100Hz 0.0004 耗散因素100kHz <0.0002 體積電阻率 1.4 X 1015 ohm-cm 介電強度 507 V/mil 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） ^1 ϋ n ϋ-^^ n ϋ n I ϋ I el I n 1 ϋ n n ϋ 1 ϋ ·1 ϋ ϋ n I I (請先閱讀背面之注意事項再填寫本頁) 569363 A7 B7 五、發明說明（θ ) 表II 測試 測試敘述 測試的量 結果 預處理條件 24小時125°C烘烤， 168 小時之 85°C/85% 相對溼度浸潤，在 220 °C下3x重熔 (EIA/JEDEC 標準 JESD22-A113-B6) 38 0失敗 在FR板1上 之溫度循環 -40°C 至 125°C5 循環 至50%失敗 --nr 1 八产。门 3 30 0失敗V250循環 0失敗2/500循環 0失敗2/750循環 0失敗V1000循環 0失敗V1250循環 0失敗V1500循環 A Π . t-tr 1 ^ ^ yr-rr -^rr« 僅封裝之溫-55°C至125°C 3 8 0失敗2/250循環 度循環 0失敗2/500循環 0失敗2/750循環 0失敗V1000循環 (請先閱讀背面之注意事項再填寫本頁) — — — — — — — I-------I - 1. 封裝焊球重熔而將該封裝附著至一環氧樹脂玻璃纖維(FR-4)板以 模擬實際使用。 2. 失敗係定義爲當電壓施加時其係斷路或是短路。 3. MIL-STD-883 1010.7溫度循環測試方法測試條件B。 4. 10分鐘浸潤時間係使用在每一溫度極限而於如所指定時間測試 每一電性I/O的之短路。 5. MIL-STD-883(依據規格之修正測試條件） 6. 接合電子元件工程委員會（Joint Electron Devices Engineering Council) 0 21 . 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 569363 A7 B7 五、發明說明（/ ) 製程步驟表 (習知方法對在此主張申請專利$B圍及所揭露之本發明製程方 法之比輕^_— __ 製程型態 步驟 號碼 印刷間隔物/ 印刷晶粒附著 印刷間隔物/ 分配晶粒附著 使用墊黏 合劑 A1 做爲點 B1 1 做爲墊 1 印刷間隔物 印刷間隔物 移除襯墊 印刷間隔 物 分配黏 合劑 2 硬化間隔物 硬化間隔物 打孔或放置 黏合劑 附著熱晶 粒 附著熱 晶粒 3 印刷晶粒附著 分配晶粒附著 励喔力及/ 或熱 4 5 附著熱晶粒 附著熱晶粒 移除襯墊 附著熱晶粒 C請先閱讀背面之注意事項再填寫本頁) I --------訂-------- -線 ----------------------- 1 a係本發明之組成物，其中點係做爲該間隔物材質。 * 1 B爲本發明之一組成物，其中墊係做爲該間隔物材質。 圖式之簡單說明 圖1爲一完全封裝元件之圖，該元件能藉由使用本發 明之黏合劑而製造’以及圖1係該元件之完全側視圖。 圖2爲用於範例中之本發明之黏合劑分散的槪略圖。 圖3爲以含有間隔珠之黏合劑將晶粒附著至該基板而 在封裝前之槪略圖。 圖4爲以含有間隔珠之黏合劑將晶粒附著至該基板而 在完成聚合物封裝製程之後的槪略圖。 圖5爲如本發明之製程中所提出之當施加壓力時該晶 粒附著黏合劑之可能分散的槪略圖。 22 ^^尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ~ 569363 A7
五、發明說明（W ) 圖6爲本發明之預硬化聚合間隔物印刷晶粒方法之槪 略解說。 圖7爲本發明之另一種預硬化聚合間隔物分散晶粒方 法之槪略解說。 圖8爲本發明之另一種印刷或是分配晶粒附者墊方法 之槪略解說。 圖9爲本發明之又一種印刷或是分配晶粒分段墊方法 之槪略解說。 圖10爲本發明之又一種元件，該元件能藉由使用本發 明之黏合劑而製造，其中揭示出在一封裝中半導體晶粒疊 在另一半導體晶粒頂部上的完全側視圖。 圖式元件符號說明 1 封裝的元件 2 晶粒 3 電路基板 4 間隔物粒子或珠 5 黏合劑 6 引線接合 7 蓋板 8 包封物 9 焊球 10 印刷點 11 元件封裝 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 23 (請先閱讀背面之注意事項再填寫本頁} ---------訂--------- 線ΙΦ---------------------- 569363 A7 五、發明說明（>>) 12 晶粒 13 黏合劑 14 間隔珠 15 電路板 16 對角線 17 對角線 18 最終產品 19 最終產品 20 間隔物 21 完成產品 22 晶粒附著點 23 產品 (請先閱讀背面之注意事項再填寫本頁) 1 ϋ ϋ ϋ ·ϋ^OJf n n n n I ϋ n ϋ n n ϋ ϋ n ϋ ϋ ϋ n ϋ ϋ H ϋ n n H I . 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. 569363 A8 B8 C8 D8 六、申請專利範園 1·一種可硬化黏合劑組成物，其係包括下列組合： (請先閲讀背面之注意事項再填寫本頁) 可硬化聚合物基礎材質，包含在該聚合物基礎材質者 有： (I )無機絕緣粒子，其具有1微米至1000微米之平均 粒子尺寸以及大約1.0至1.5之主要軸與次要軸之比値，該 無機絕緣粒子在該組成物中係以一足夠的量存在，以提供 由該黏合劑接合之各基板間的平面黏合劑結合厚度，以及 (Π)至少一低熱膨脹係數之塡充物，其具有低於1〇微 米之平均粒子尺寸且其量以該可硬化聚合物基礎材質之重 量爲基礎乃至少大於50重量百分比，其中具有大於1〇至 大約100微米之尺寸的低熱膨脹係數之塡充物的量以該黏 合劑組成物中之該低熱膨脹係數塡充物之全部重量爲基礎 乃低於0.1重量百分比。 線丨1 2. 如申請專利範圍第1項所述之可硬化黏合劑組成物 ，其中該無機絕緣粒子係熔合矽土粒子。 3. 如申請專利範圍第1項所述之可硬化黏合劑組成物 ，其中該無機絕緣粒子係氧化鋁粒子。 4. 一種半導體元件，其中至少兩個別基板係以如申請 專利範圍第1項所述之可硬化黏合劑組成物所連接以及結 合。 5· —種用於連接至少兩個別基板之製程，該製程包括 (I)施加如申請專利範圍第1項所述之可硬化黏合劑 組成物至該個別基板之至少一個之至少一表面； __1____ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱） 098892 ABCD 569363 六、申請專利範圍 (π)安裝另一個別基板至（I)之基板的已黏合處理側， 以形成它們的疊層； (瓜）施加壓力至該疊層以分散疊層間之黏合劑，直至 每一基板接觸到該黏合劑組成物之最大無機絕緣粒子爲止 ，以及之後； (IV)硬化該黏合劑組成物。 6. 如申請專利範圍第5項所述之製程，其中熱係額外 地施加在步驟（瓜）中。 7. 如申請專利範圍第4項所述之半導體元件，其中該 兩個別基板係一半導體晶粒以及一用於該半導體晶粒之附 著基板。 8. 如申請專利範圍第5項所述之製程，其中該兩個別 基板係一半導體晶粒以及一用於該半導體晶粒之附著基板 〇 9. 如申請專利範圍第1項所述之可硬化黏合劑組成物 ，其中該黏合劑基礎材質係選自基本上由下列組成之群中 (a) 可硬化矽氧烷組成物； (b) 可硬化環氧樹脂組成物； (c) 可硬化聚醯亞胺組成物；以及 (d) 可硬化丙烯酸酯組成物。 10. 如申請專利範圍第9項所述之可硬化黏合劑組成物 ，其具有一選自基本上由下列所組成之群中的硬化機制： ⑴凝結反應； 國國家標準（CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再塡寫本頁) -έ 線ί 569363 C8 D8 六、申請專利範圍 (ii) 加成反應； (iii) 紫外線初始輻射反應，以及 (iv) 自由基初始反應。 11.如申請專利範圍第9項所述之可硬化黏合劑組成物 ，其中該黏合劑基礎材質係矽氧烷組成物。 · 12·如申請專利範圍第11項所述之可硬化黏合劑組成 物，其中該矽氧烷組成物係加成反應之可硬化矽氧烷組成 物。 13·如申請專利範圍第9項所述之可硬化黏合劑組成物 ，其中該黏合劑基礎材質係環氧樹脂組成物。 14.一種黏合劑組成物，其中絕緣粒子係以足夠量存在 ，以當在介於-55°C與+20(TC間以5t/分鐘之加熱速率測量 時，在任何玻璃轉換溫度之前以及之後獲得一具有低於 240//m/m/°C之線性熱膨脹係數之黏合劑。 (請先閲讀背面之注意事項再塡寫本頁) -一 口 線！ ____3 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
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JP2001164231A (ja) * 1999-12-07 2001-06-19 Shigeru Koshibe 半導体用高純度接着剤

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US6784555B2 (en) 2004-08-31
KR20040044936A (ko) 2004-05-31
DE10297225B4 (de) 2009-12-31
JP2005503467A (ja) 2005-02-03
WO2003025080A1 (en) 2003-03-27
JP2011157559A (ja) 2011-08-18
US20030057538A1 (en) 2003-03-27
DE10297225T5 (de) 2004-11-04

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