US20180014408A1 - Method for manufacturing ceramic substrate, ceramic substrate, and silver-based conductor material - Google Patents

Method for manufacturing ceramic substrate, ceramic substrate, and silver-based conductor material Download PDF

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Publication number
US20180014408A1
US20180014408A1 US15/543,290 US201615543290A US2018014408A1 US 20180014408 A1 US20180014408 A1 US 20180014408A1 US 201615543290 A US201615543290 A US 201615543290A US 2018014408 A1 US2018014408 A1 US 2018014408A1
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Prior art keywords
silver
unfired
conductor material
based conductor
manufacturing
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US15/543,290
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Tatsuya Katoh
Masanori Ito
Masaki Kutsuna
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Assigned to NGK SPARK PLUG CO., LTD. reassignment NGK SPARK PLUG CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ITO, MASANORI, KATOH, TATSUYA, KUTSUNA, MASAKI
Publication of US20180014408A1 publication Critical patent/US20180014408A1/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/14—Compositions for glass with special properties for electro-conductive glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/6303—Inorganic additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4664—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/0753—Insulation
    • H05K2201/0769—Anti metal-migration, e.g. avoiding tin whisker growth
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49163—Manufacturing circuit on or in base with sintering of base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient

Definitions

  • the present invention relates to a method for manufacturing a ceramic substrate, a ceramic substrate, and a silver-based conductor material.
  • LTCC low temperature co-fired ceramic
  • Such an LTCC substrate is usually manufactured by laminating a plurality of green sheets, each having a wiring trace formed of an unfired conductor material, and firing the green sheets (for example, see the following Patent Documents 1 and 2, etc.).
  • Patent Document 1 Japanese Patent Application Laid-Open (kokai) No. H6-252524
  • Patent Document 2 Japanese Patent Application Laid-Open (kokai) No. 2007-234537
  • a process of manufacturing a ceramic substrate using a silver-based conductor material, not limited to the above-mentioned LTCC substrate, has a problem of diffusion of silver contained in the conductor material into the ceramic during firing. This may cause formation of voids in the substrate, deformation of the substrate, and change of the color of the substrate.
  • Patent Document 1 discloses a technique of coating the surfaces of the particles of a silver-based conductor powder with an antimony salt or an antimonate salt.
  • Patent Document 2 discloses a technique of adding a silicon (Si) powder to a conductor paste.
  • the present invention has been accomplished to solve at least the above-described problem by employing a method different from conventional ones.
  • the present invention can be realized as the following modes.
  • One mode of the present invention is a method for manufacturing a ceramic substrate containing glass.
  • the manufacturing method includes a firing step.
  • the firing step may be a step of firing an unfired ceramic layer and an unfired silver-based conductor material disposed on the unfired ceramic layer.
  • the unfired silver-based conductor material may contain at least one of a metal boride and a metal silicide.
  • the manufacturing method of this mode prevents diffusion of silver during firing because at least one of a metal boride and a metal silicide is added in the unfired silver-based conductor material.
  • the unfired silver-based conductor material may be disposed on a surface of an unfired ceramic layer, between unfired ceramic layers adjacent to each other, or in through holes formed in an unfired ceramic layer.
  • the metal boride may be at least one of lanthanum hexaboride, silicon hexaboride, titanium diboride, and tantalum diboride.
  • the manufacturing method of this mode prevents diffusion of silver during firing more effectively.
  • the metal silicide may be at least one of titanium disilicide, zirconium disilicide, tungsten disilicide, chromium disilicide, molybdenum disilicide, and tantalum disilicide.
  • the manufacturing method of this mode prevents diffusion of silver during firing more effectively.
  • the unfired silver-based conductor material contains the metal boride or the metal silicide.
  • the amount of the metal boride or the metal silicide with respect to the amount of the inorganic components of the unfired silver-based conductor material may be greater than 3 vol. % and less than 20 vol. %.
  • the manufacturing method of this mode prevents diffusion of silver during firing more effectively and also prevents impurities from remaining in the conductor of the substrate.
  • the unfired silver-based conductor material contains a silver powder and at least one of the metal boride and the metal silicide may be attached to surfaces of particles of the silver powder in the silver-based conductor material.
  • the manufacturing method of this mode prevents oxidation of silver during firing more effectively. As a result, the effect of preventing diffusion of silver into a ceramic layer improves.
  • a second mode of the present invention is a ceramic substrate.
  • the ceramic substrate may include a ceramic layer and a wiring layer of a sliver-based conductor which are formed by the firing step according to any one of the manufacturing methods of the above-mentioned mode.
  • the ceramic substrate of this mode prevents problems such as formation of voids in the ceramic substrate, warpage of the ceramic substrate, change of the color of the ceramic substrate, etc.
  • a third mode of the present invention is a silver-based conductor material which is unfired and fired together with an unfired ceramic layer to form a wiring layer in a ceramic substrate.
  • the silver-based conductor material of this mode may contain at least one of a metal boride and a metal silicide.
  • the silver-based conductor material of this mode prevents diffusion of silver in a process of manufacturing a ceramic substrate.
  • the metal boride may be at least one of lanthanum hexaboride, silicon hexaboride, titanium diboride, and tantalum diboride.
  • the metal silicide may be at least one of titanium disilicide, zirconium disilicide, tungsten disilicide, chromium disilicide, molybdenum disilicide, and tantalum disilicide.
  • All the plurality of constituent elements of each mode of the present invention are not essential.
  • a part of the elements may be properly modified, deleted, or replaced with another new element, or the limitation thereof may be partially removed.
  • a portion or all of the above-described technical features contained in one mode of the present invention may be combined with a portion or all of the above-described technical features contained in other modes of the present invention to thereby attain an independent mode of the present invention.
  • the present invention can be realized as various modes other than a method for manufacturing a ceramic substrate, a ceramic substrate, or a silver-based conductor material.
  • the present invention can be realized as a method for firing a ceramic substrate, a method for manufacturing a silver-based conductor material, an apparatus for implementing those methods, etc.
  • FIG. 1 Schematic view showing a structure of an LTCC substrate.
  • FIG. 2 Flowchart showing steps of a process of manufacturing the LTCC substrate.
  • FIG. 3 Explanatory view showing the results of an experiment for checking an effect of preventing diffusion of silver by adding an additive to a conductor paste.
  • FIG. 4 Explanatory views showing scanning electron microscope (SEM) images of LTCC substrates and images showing the silver concentration distribution profile in each of the LTCC substrates.
  • FIG. 1 is a schematic view showing the structure of an LTCC substrate 10 according to one embodiment of the present invention.
  • the LTCC substrate 10 which is a ceramic substrate is used, for example, for electronic components, high-frequency modules, IC packages, or printed wiring boards used in computers, communication devices, etc.
  • the LTCC substrate 10 has a multi-layer structure formed by laminating a plurality of ceramic insulating layers 11 . Each of the ceramic insulating layers 11 is formed by low temperature firing whose firing temperature is 1000° C. or lower.
  • Each of the ceramic insulating layers 11 has vias which are through holes for disposing via electrodes 12 .
  • the LTCC substrate 10 has wiring layers including internal electrodes 13 and external electrodes 14 , each formed between ceramic insulating layers 11 adjacent to each other. The wiring layers are electrically connected to one another through the via electrodes 12 formed in the ceramic insulating layers 11 .
  • each of the electrodes 12 to 14 is formed of a silver-based conductor material whose main component is silver.
  • a “main component” means a material component which accounts for at least 50 mass % of the mixture.
  • passive elements resistor, etc.
  • active elements ICs, etc.
  • FIG. 2 is a flowchart showing steps of a process of manufacturing the LTCC substrate 10 .
  • the LTCC substrate 10 is manufactured by firing an unfired ceramic material (green sheet) and an unfired silver-based conductor material together at low temperature.
  • a green sheet which constitutes an unfired ceramic layer containing ceramic particles and glass particles is prepared.
  • the green sheet is made by preparing a ceramic slurry by mixing together inorganic components (including a glass powder and an inorganic filler), a binder component, a plasticizer, and a solvent, and forming the ceramic slurry into the shape of a sheet using the doctor blade method or the like.
  • a conductor paste which forms electrodes 12 to 14 and which is an unfired silver-based conductor material is prepared.
  • the conductor paste is made by mixing together a powder of the silver-based material and a glass powder which are inorganic components, and an organic solvent and a resin which is a varnish component.
  • the inventor of the present invention has found that adding at least one of a metal boride and a metal silicide into the conductor paste as an inorganic component prevents diffusion of silver contained in the conductor paste, or a silver component of the conductor paste, into the ceramic insulating layer during a firing step described later. It is considered that oxygen present near the conductor paste is consumed by oxidation of the metal boride or the metal silicide during the firing step, whereby oxidation of the silver contained in the conductor paste is prevented.
  • an additive including at least one of a metal boride and a metal silicide is added to the conductor paste.
  • the following substances can be used as an additive to be added to the conductor paste.
  • metal boride examples include lanthanum hexaboride (LaB 6 ), silicon hexaboride (SiB 6 ), titanium diboride (TiB 2 ), tantalum diboride (TaB 2 ), niobium diboride (NbB 2 ), chromium diboride (CrB 2 ), molybdenum boride (MoB), zirconium diboride (ZrB 2 ), tungsten boride (WB), vanadium diboride (VB 2 ), and hafnium diboride (HfB 2 ).
  • LaB 6 lanthanum hexaboride
  • SiB 6 silicon hexaboride
  • TiB 2 titanium diboride
  • TaB 2 tantalum diboride
  • NbB 2 niobium diboride
  • CrB 2 chromium diboride
  • MoB molybdenum boride
  • ZrB 2 zirconium diboride
  • metal silicide examples include zirconium disilicide (ZrSi 2 ), titanium disilicide (TiSi 2 ), tungsten disilicide (WSi 2 ), molybdenum disilicide (MoSi 2 ), tantalum disilicide (TaSi 2 ), chromium disilicide (CrSi 2 ), niobium disilicide (NbSi 2 ), iron disilicide (FeSi 2 ), and hafnium disilicide (HfSi 2 ).
  • ZrSi 2 zirconium disilicide
  • TiSi 2 titanium disilicide
  • WSi 2 tungsten disilicide
  • MoSi 2 molybdenum disilicide
  • TaSi 2 tantalum disilicide
  • CrSi 2 chromium disilicide
  • NbSi 2 niobium disilicide
  • FeSi 2 iron disilicide
  • hafnium disilicide hafnium disilicide
  • the metal borides and the metal silicides described above are just examples.
  • the additive may be a metal boride or a metal silicide other than those described above.
  • the metal boride or the metal silicide used as an additive is preferably a one which initiates a reaction with oxygen during the firing step described later.
  • the metal boride or the metal silicide preferably has an oxidation temperature which is lower than the firing temperature during the firing step 4 described later.
  • the “oxidation temperature” is a peak temperature at which oxidation occurs, and is a value measured through thermogravimetric-differential thermal analysis (TG-DTA).
  • TG-DTA thermogravimetric-differential thermal analysis
  • the oxidation temperature of the metal boride or the metal silicide as an additive is preferably 800° C.
  • the oxidation temperature of the metal boride or the metal silicide as an additive is preferably 400° C. or higher, and more preferably 500° C. or higher. Diffusion of silver is prevented if the oxidized silver is not wetted by the glass material contained in the green sheet when the glass material softens during the firing step. For this reason, the oxidation temperature of the metal boride or the metal silicide as an additive is preferably lower than the glass-transition temperature of the glass material contained in the green sheet prepared in step 1 .
  • the additive may be added in the form of powder, for example, concurrently with or after the step of mixing the inorganic components and the varnish components.
  • the additive may be added before mixing the inorganic components and the varnish components.
  • the additive is added in such a manner that the surfaces of the particles of the silver-based material contained in the inorganic components are coated with the additive.
  • the silver-based material can be coated with the additive by the following method. First, the additive is dissolved or dispersed in an organic solvent (toluene, xylene, or alcohol). Then, a powder of the silver-based material is dispersed or suspended in the solution or dispersion of the additive.
  • the solvent is kept still for a predetermined time or stirred so as to cause the additive to adhere to the surfaces of the particles of the silver-based material. Coating the silver-based material with the additive as described prevents oxidation of silver to a greater degree, and improves the effect for suppressing silver diffusion.
  • the additive may be added to the conductor paste using a method other than that described above.
  • the amount of additive with respect to the amount of the inorganic components of the conductor paste is preferably more than 3 vol. %, more preferably more than 5 vol. %. This condition allows the effect for suppressing silver diffusion to be attained more reliably.
  • the amount of additive with respect to the amount of inorganic components of the conductor paste is preferably less than 20 vol. %, more preferably less than 18 vol. %. This condition prevents impurities originating from the additive in the conductor paste from remaining in the LTCC substrate 10 after firing.
  • step 3 the above-described conductor paste is disposed on the green sheet. Specifically, vias are formed in the green sheet by a hole-making operation such as punching, and the vias are filled with the conductor paste. A wiring trace is printed on each surface of the green sheet by applying the conductor paste thereto by means of screen printing or the like. After the wiring trace is formed, a plurality of such green sheets are laminated to form an unfired laminate.
  • step 4 the unfired laminate is fired at a low temperature.
  • the firing temperature in step 4 may be a temperature preset in accordance with the glass-transition temperature of the material component of the green sheet prepared in step 1 . Specifically, the firing temperature in step 4 may be, for example, approximately 750° C. to 950° C.
  • the LTCC substrate 10 is completed. Passive elements and active elements to be connected to the electrodes 14 are disposed on the completed LTCC substrate 10 .
  • addition of the metal boride or the metal silicide to the conductor paste in step 2 prevents diffusion of silver from the silver-based conductor material to the ceramic insulating layer 11 .
  • Local change of the color of the ceramic caused by a change in the composition of the ceramic near the wiring trace as well as local deterioration of the strength of the ceramic insulating layer 11 are also prevented.
  • acceleration of firing-caused contraction only near the conductor paste is prevented, and formation of voids between the electrodes 12 to 14 and the ceramic insulating layers 11 are prevented.
  • FIG. 3 is an explanatory view showing the results of an experiment for checking an effect of preventing diffusion of silver by adding the additive to the conductor paste.
  • This experiment checked diffusion of silver into the ceramic insulating layers using samples S01 to S18 (missing numbers: S04 and S16) of LTCC substrates manufactured through use of a conductor paste containing an additive and samples T01 to T03 of the LTCC substrates manufactured through use of a conductor paste containing no additive.
  • the specific conditions for manufacturing samples S01 to S18 (missing numbers: S04 and S16) and T01 to T03 are as follows.
  • a powder of borosilicate-based glass whose main components are silica (SiO 2 ), alumina (Al 2 O 3 ), and boric acid (H 3 BO 3 ) and a powder of alumina were put into a pot formed of alumina such that their volume ratio became 60:40 and the total weight became 1 kg.
  • a green sheet with a thickness of 0.15 mm was made from the ceramic slurry using the doctor blade method.
  • Inorganic components a silver powder and a borosilicate glass powder
  • Varnish components ethyl cellulose resin and terpineol solvent
  • Additive any one of LaB 6 , SiB 6 , TiB 2 , TaB 2 , ZrSi 2 , TiSi 2 , WSi 2 , CrSi 2 , MoSi 2 , and TaSi 2
  • the amount of additive with respect to the amount of the inorganic components of the conductor paste was set to 15 vol. % for samples S01 to S03, S05 to S10, and S13 to S15, 9 vol. % for samples S11 and S17, and 3 vol. % for sample S12.
  • the oxidation temperatures shown in the table were measured through the TG-DTA method.
  • the mixture of the above-described inorganic components and varnish components was kneaded with a triple roll mill, whereby the conductor paste for sample S18 was prepared.
  • the amount of additive with respect to the amount of the conductor paste were 15 vol. %.
  • the conductor pastes for samples T01 and T02 were prepared by the same method as that for samples S01 to S17 (missing numbers: S04 and S16) except that no additive was added.
  • the conductor paste for sample T03 was prepared by the same method as that for samples S01 to S17 (missing numbers: S04 and S16) except that in place of the metal boride or the metal silicide, SiO 2 was added as an additive.
  • Vias were formed in the green sheet and filled with the conductor paste.
  • a wiring trace was formed on a surface of the green sheet by applying the conductor paste thereto.
  • a plurality of such green sheets with the wiring trace formed thereon were laminated to form an unfired laminate.
  • each of sections (A) to (G) of FIG. 4 shows a scanning electron microscope (SEM) image of a cross section of the LTCC substrate parallel to a direction of lamination of the LTCC substrate and an image of the same cross section as the SEM image captured by an electron probe micro analyzer (EPMA).
  • SEM scanning electron microscope
  • EPMA electron probe micro analyzer
  • the SEM image is shown on the upper side and the image captured by EPMA is shown on the lower side.
  • the image captured by an EPMA (hereinafter, simply referred to as the “EPMA image”) shows the silver concentration distribution profile of the LTCC substrate in colors in response to the level of silver concentration.
  • Section (G) of FIG. 4 has the SEM image and the EPMA image of sample T 01 which was manufactured through use of a conductor paste containing no additive.
  • the internal electrode formed of the silver-based conductor extends in the horizontal direction of the images.
  • the inventors of the present invention acquired the SEM images and the EPMA images of predetermined polished cross sections of samples S01 to S18 (missing numbers: S04 and S1 6 ), and T01 to T03.
  • the inventor determined a “silver diffusion distance” for each sample from the EPMA image of each sample. Specifically, the inventor used the concentration of Ag at an electrode interface through which the internal electrode is in contact with the ceramic insulating layer as a reference concentration, and measured, at five points, the distance from the electrode interface to a region in which the concentration of Ag in the ceramic insulating layer becomes equal to or less than half the reference concentration. The average of the measured distances was used as the “silver diffusion distance.”
  • the silver diffusion distances were 30 ⁇ m or less in all samples S01 to S18 (missing numbers: S04 and S16) which were manufactured through use of the conductor paste containing the metal silicide or the metal boride as an additive.
  • the silver diffusion distances were greater than 30 ⁇ m in samples T01 to T03 which were manufactured without use of the conductor paste containing the metal silicide or the metal boride as an additive.
  • the silver diffusion distance was restrained to a value smaller than 5 ⁇ m in any of samples S01 to S03, S05, S10 to S15, S17, and S18 in which one of LaB 6 , SiB 6 , TiB 2 , TaSi 2 , and ZrSi 2 was added to the conductor paste as an additive in an amount greater than 3 vol. %.
  • SiB 6 is used as an additive, SiO 2 generated by oxidation during firing remains in the ceramic insulating layer. That is, in the case where SiB 6 is used as an additive as in sample S02, only a compound of the same composition as the compound contained in the ceramic insulating layer remains in the ceramic insulating layer. As a result, migration of impurities into the ceramic insulating layer is prevented.
  • the metal boride or the metal silicide added to the conductor paste prevents diffusion of silver from the conductor material during the firing step. Accordingly, the LTCC substrate 10 manufactured according to the manufacturing process can prevent various types of problems caused by diffusion of silver from the conductor material during the firing step such as formation of voids in the ceramic substrate, deterioration of the ceramic substrate, etc.
  • a single type of metal boride or a single type of metal silicide is added to the conductor paste as an additive.
  • both a metal boride and a metal silicide may be added to the conductor paste as additives.
  • a plurality of types of metal borides may be added in combination as additives.
  • a plurality of types of metal silicides may be added in combination as additives.
  • one or more types of metal borides may be added together with one or more types of metal silicides as additives.
  • the additive described above may be added to a silver-based conductor material.
  • the additive described above may be added in a process of manufacturing a ceramic substrate whose firing temperature is 1000° C. or higher.
  • the silver-based conductor material containing at least one of a metal boride and a metal silicide added thereto is not required be in the form of paste, but may be, for example, in the form of powder.
  • alumina is used as an inorganic filler.
  • an inorganic filler used for preparation of the green sheet a material other than alumina may be used.
  • mullite can be used as an inorganic filler.

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  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
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  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
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