US20110123389A1 - High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - Google Patents

High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis Download PDF

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Publication number
US20110123389A1
US20110123389A1 US12/996,949 US99694909A US2011123389A1 US 20110123389 A1 US20110123389 A1 US 20110123389A1 US 99694909 A US99694909 A US 99694909A US 2011123389 A1 US2011123389 A1 US 2011123389A1
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US
United States
Prior art keywords
inclusions
high purity
copper
less
purity copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/996,949
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English (en)
Inventor
Yuichiro Shindo
Susumu Shimamoto
Atsushi Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Assigned to JX NIPPON MINING & METALS CORPORATION reassignment JX NIPPON MINING & METALS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIMAMOTO, SUSUMU, FUKUSHIMA, ATSUSHI, SHINDO, YUICHIRO
Publication of US20110123389A1 publication Critical patent/US20110123389A1/en
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/12—Electrolytic production, recovery or refining of metals by electrolysis of solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C7/00—Constructional parts, or assemblies thereof, of cells; Servicing or operating of cells
    • C25C7/06—Operating or servicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Wire Bonding (AREA)
US12/996,949 2008-09-30 2009-09-24 High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis Abandoned US20110123389A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-253038 2008-09-30
JP2008253038 2008-09-30
PCT/JP2009/066479 WO2010038641A1 (ja) 2008-09-30 2009-09-24 高純度銅及び電解による高純度銅の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/066479 A-371-Of-International WO2010038641A1 (ja) 2008-09-30 2009-09-24 高純度銅及び電解による高純度銅の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/945,115 Division US9476134B2 (en) 2008-09-30 2013-07-18 High purity copper and method of producing high purity copper based on electrolysis

Publications (1)

Publication Number Publication Date
US20110123389A1 true US20110123389A1 (en) 2011-05-26

Family

ID=42073406

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/996,949 Abandoned US20110123389A1 (en) 2008-09-30 2009-09-24 High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
US13/945,115 Active 2031-04-21 US9476134B2 (en) 2008-09-30 2013-07-18 High purity copper and method of producing high purity copper based on electrolysis

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/945,115 Active 2031-04-21 US9476134B2 (en) 2008-09-30 2013-07-18 High purity copper and method of producing high purity copper based on electrolysis

Country Status (7)

Country Link
US (2) US20110123389A1 (ko)
EP (1) EP2330224B1 (ko)
JP (1) JP4620185B2 (ko)
KR (1) KR101058765B1 (ko)
CN (1) CN102016088B (ko)
TW (1) TW201026863A (ko)
WO (1) WO2010038641A1 (ko)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163425A1 (en) * 2004-01-29 2010-07-01 Nippon Mining & Metals Co., Ltd. Ultrahigh-Purity Copper and Process for Producing the Same
US20110163447A1 (en) * 2008-09-30 2011-07-07 Jx Nippon Mining & Metals Corporation High-Purity Copper or High-Purity Copper Alloy Sputtering Target, Process for Manufacturing the Sputtering Target, and High-Purity Copper or High-Purity Copper Alloy Sputtered Film
US20140353278A1 (en) * 2011-11-15 2014-12-04 Jx Nippon Mining & Metals Corporation Copper foil for producing graphene and method of producing graphene using the same
US20140360869A1 (en) * 2012-01-25 2014-12-11 Jx Nippon Mining & Metals Corporation High-purity copper-chromium alloy sputtering target
US9260310B2 (en) 2011-02-18 2016-02-16 Jx Nippon Mining & Metals Corporation Copper foil for producing graphene and method of producing graphene using the same
US20160047017A1 (en) * 2013-04-08 2016-02-18 Mitsubishi Materials Corporation Hot-rolled copper plate
US9487404B2 (en) 2011-06-02 2016-11-08 Jx Nippon Mining & Metals Corporation Copper foil for producing graphene and method of producing graphene using the same
US20160361760A1 (en) * 2014-03-14 2016-12-15 Mitisubishi Materials Corporation Copper ingot, copper wire material, and method for producing copper ingot
US9597754B2 (en) 2011-03-07 2017-03-21 Jx Nippon Mining & Metals Corporation Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire
US9840757B2 (en) 2014-06-13 2017-12-12 Jx Nippon Mining & Metals Corporation Rolled copper foil for producing two-dimensional hexagonal lattice compound and method of producing two-dimensional hexagonal lattice compound
US10266952B2 (en) * 2014-06-05 2019-04-23 Jx Nippon Mining & Metals Corporation Copper chloride, CVD raw material, copper wiring film, and method for producing copper chloride
US10494712B2 (en) 2015-05-21 2019-12-03 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target and method for manufacturing same
US10597790B2 (en) 2016-05-10 2020-03-24 Hitachi Metals, Ltd. Refined copper, method of producing refined copper, electric wire and method of manufacturing electric wire
US10889889B2 (en) 2015-08-24 2021-01-12 Mitsubishi Materials Corporation High purity copper sputtering target material

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103160854A (zh) * 2011-12-15 2013-06-19 广东先导稀材股份有限公司 高纯铜的制备方法
KR101553739B1 (ko) * 2012-12-10 2015-09-30 한국과학기술원 우라늄 회수용 전기화학적 장치
CN104047021A (zh) * 2013-03-13 2014-09-17 江苏瑞崚新材料科技有限公司 一种用电解方法制备出6N-Cu的方法
JP6662088B2 (ja) * 2016-02-22 2020-03-11 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6661951B2 (ja) * 2015-10-08 2020-03-11 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6662087B2 (ja) * 2016-02-22 2020-03-11 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6661953B2 (ja) * 2015-10-08 2020-03-11 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6661952B2 (ja) * 2015-10-08 2020-03-11 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6651737B2 (ja) * 2015-08-24 2020-02-19 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6066010B1 (ja) * 2016-06-28 2017-01-25 日立金属株式会社 精製銅並びに電線の製造方法
CN110678582B (zh) 2017-06-01 2021-10-29 三菱综合材料株式会社 高纯度电解铜的制造方法
WO2018221734A1 (ja) 2017-06-01 2018-12-06 三菱マテリアル株式会社 高純度電気銅の製造方法
JP6341330B1 (ja) 2017-12-06 2018-06-13 千住金属工業株式会社 Ｃｕボール、ＯＳＰ処理Ｃｕボール、Ｃｕ核ボール、はんだ継手、はんだペースト、フォームはんだ及びＣｕボールの製造方法
TWI727586B (zh) * 2019-02-28 2021-05-11 日商Ｊｘ金屬股份有限公司 銅電極材料

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US5206430A (en) * 1990-10-31 1993-04-27 Mitsui Toatsu Chemicals, Incorporated Method for obtaining high-purity cinnamic acid
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US6896788B2 (en) * 2000-05-22 2005-05-24 Nikko Materials Company, Limited Method of producing a higher-purity metal
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KR20100108457A (ko) 2010-10-06
US20130302205A1 (en) 2013-11-14
EP2330224A4 (en) 2012-01-25
WO2010038641A1 (ja) 2010-04-08
CN102016088B (zh) 2014-07-30
TWI349713B (ko) 2011-10-01
EP2330224B1 (en) 2013-05-29
KR101058765B1 (ko) 2011-08-24
EP2330224A1 (en) 2011-06-08
CN102016088A (zh) 2011-04-13
US9476134B2 (en) 2016-10-25
JP4620185B2 (ja) 2011-01-26
JPWO2010038641A1 (ja) 2012-03-01

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