US20100095705A1 - Method for forming a dry glass-based frit - Google Patents

Method for forming a dry glass-based frit Download PDF

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Publication number
US20100095705A1
US20100095705A1 US12/504,276 US50427609A US2010095705A1 US 20100095705 A1 US20100095705 A1 US 20100095705A1 US 50427609 A US50427609 A US 50427609A US 2010095705 A1 US2010095705 A1 US 2010095705A1
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United States
Prior art keywords
glass
frit
melting
batch material
forming
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Abandoned
Application number
US12/504,276
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English (en)
Inventor
Robert S. Burkhalter
Lisa A. Lamberson
Robert M. Morena
Shyamala Shanmugam
Charlene M. Smith
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Corning Inc
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Corning Inc
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Application filed by Corning Inc filed Critical Corning Inc
Priority to US12/504,276 priority Critical patent/US20100095705A1/en
Assigned to CORNING INCORPORATED reassignment CORNING INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BURKHALTER, ROBERT S., LAMBERSON, LISA A., MORENA, ROBERT M., SHANMUGAM, SHYAMALA, SMITH, CHARLENE M.
Priority to TW098135206A priority patent/TWI410384B/zh
Priority to EP09740809A priority patent/EP2349940A1/en
Priority to JP2011533242A priority patent/JP5718818B2/ja
Priority to KR1020117011423A priority patent/KR101621997B1/ko
Priority to CN201610677859.5A priority patent/CN106277796B/zh
Priority to CN200980142419.8A priority patent/CN102186789B/zh
Priority to PCT/US2009/060956 priority patent/WO2010048042A1/en
Priority to KR1020167001804A priority patent/KR101662977B1/ko
Publication of US20100095705A1 publication Critical patent/US20100095705A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C03C3/21—Silica-free oxide glass compositions containing phosphorus containing titanium, zirconium, vanadium, tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants

Definitions

  • the present invention relates to a method for forming a dry frit based on an inorganic glass. More particularly, the present invention relates to a method for forming a dry inorganic glass-based frit suitable for use as a sealing medium for glass packages.
  • Electroluminescent (EL) devices such as organic light emitting diode devices, are typically manufactured by forming multiple devices in a single assembly using large master (mother) sheets of glass. That is, the devices are encapsulated between two large glass sheets or plates to form a composite assembly, after which individual devices are cut from the composite assembly.
  • Each device of the composite assembly includes a seal surrounding the organic light emitting diodes of the individual device that seals the top and bottom plates together, and protects the organic light emitting diodes disposed within, since some devices, particularly organic light emitting diodes, degrade in the presence of oxygen and moisture that can be found in the ambient atmosphere.
  • the EL devices may be sealed using an adhesive, e.g. epoxy, or more recently, using a glass frit that is heated to melt the frit and form the seal between the two plates.
  • Frit sealed devices exhibit certain advantages over adhesive-sealed devices, not least of which is the superior hermeticity without the need for getters sealed within the device to scavenge contaminants. Thus, frit sealed devices are able to provide for a longer lived device than has been achievable with adhesive seals. Nevertheless, it has been found that frit sealed devices may succumb to deterioration due to moisture contained in and released by the frit into the cavity housing the organic light emitting material during the sealing process.
  • Methods are disclosed for forming a dry glass-based frit suitable for sealing electronic devices, and in particular electronic devices comprising organic materials, such as organic light emitting diode displays, organic light emitting diode lighting panels, and certain classes of organic-based photovoltaic devices.
  • organic materials such as organic light emitting diode displays, organic light emitting diode lighting panels, and certain classes of organic-based photovoltaic devices.
  • a method of forming a dry glass frit comprising forming a batch material comprising vanadium and phosphorous, heating the batch material in a conditioning step to a temperature of between about 450° C. and 550° C. for at least about 1 hour, melting the batch material after the conditioning step to form a glass melt, cooling the glass melt to form a glass wherein an OH content of the glass is equal to or less than about 20 ppm as measured by direct insertion probe mass spectrometry.
  • a glass powder for forming a glass-based frit wherein the glass powder comprises vanadium, phosphorous and a metal halide.
  • a glass powder for forming a glass-based frit wherein the glass powder comprises V 2 O 5 , P 2 O 5 and a metal halide.
  • a method of forming a glass frit comprising forming a batch material comprising V 2 O 5 , P 2 O 5 and a metal halide heating the batch material in a conditioning step to a temperature of between about 450° C. and 550° C. for at least about 1 hour, melting the batch material after the conditioning step to form a glass melt, cooling the glass melt to form a glass and wherein an OH content of the glass is equal to or less than about 20 ppm.
  • FIG. 1 is a cross sectional view of an exemplary glass package comprising an organic material.
  • FIG. 2 is plot of percent transmittance as a function of wavenumber illustrating a typical measurement for ⁇ -OH.
  • FIG. 3 is a schematic diagram of a DIP-MS apparatus for measuring outgassed water vapor.
  • FIG. 4 is a graphical representation of a Standard heating schedule according to embodiments of the present invention.
  • FIG. 5 is a graphical representation of a compressed heating schedule according to embodiments of the present invention.
  • FIG. 6 is a plot showing the results of a DIP-MS measurement conducted on a coarse hand-ground sample of frit composition C 1 , showing the extracted ion chromatogram for water.
  • FIG. 7 is a plot showing the results of a control DIP-MS measurement as conducted in FIG. 6 , but without a sample, indicating that the events (spikes) shown in FIG. 6 are related to outgassing of structural water species during the 400-700° C. temperature ramp.
  • FIG. 8 is a plot showing the results of a DIP-MS measurement conducted on coarse hand-ground samples of control (non-dry) frit composition C 1 , showing outgassing of structural water species during the 400-700° C. temperature ramp compared to results for sample C 2 showing no peaks.
  • FIG. 9 is a photograph that shows fused quartz crucibles of the control batch composition following 485° calcination (left) and 600° C. calcination (right).
  • Hermetically sealed glass packages may be used for a variety of uses, including such photonic devices as optical displays (e.g. flat panel television, cell phones displays, camera displays) and photovoltaic devices (e.g. solar cells). While epoxy seals have been used extensively for certain components, such as liquid crystal displays (LCDs), more recent work is being done on encapsulated organic materials that may be used for similar purposes. For example, organic light emitting diodes are finding application in both display devices and lighting. Certain organic materials are also finding use in the field of photovoltaics, wherein organic solar cells are showing promise.
  • optical displays e.g. flat panel television, cell phones displays, camera displays
  • photovoltaic devices e.g. solar cells
  • epoxy seals have been used extensively for certain components, such as liquid crystal displays (LCDs)
  • LCDs liquid crystal displays
  • organic light emitting diodes are finding application in both display devices and lighting.
  • Certain organic materials are also finding use in the field of photovoltaics, wherein organic solar cells are showing promise.
  • the organic materials comprising the devices are susceptible to high temperature, oxygen and moisture exposure. That is, when exposed to temperatures in excess of about 100° C., or oxygen or water, the organic material can quickly degrade. For this reason, great care must be taken to ensure devices employing organic materials are hermetically sealed.
  • One such method includes sealing the organic material between glass plates.
  • Inorganic glasses are uniquely suited as containers for housing an organic material. They are substantially environmentally stable, and highly impervious to diffusion of moisture and oxygen. However, the resulting package is only as good as the material that forms the seal between the plates.
  • Prior art devices have often employed epoxy adhesives as a sealing medium between glass plates.
  • the manufacture of LCD displays is one such example.
  • the degree of long term hermeticity required by certain organic materials suitable for use in electronic devices such as the previously mentioned displays, lighting panels and photovoltaic devices is better met by a glass seal between the plates.
  • the use of an inorganic glass-based frit has become the sealing medium of choice for organic electronic devices.
  • an exemplary frit sealing method for organic light emitting diode display 10 may comprise forming a photonic element 12 on a first (backplane) glass substrate 14 .
  • Photonic element 12 typically includes an anode and cathode electrodes (not shown) and one or more layers of the photonic material (e.g. organic light emitting material) positioned between the two electrodes.
  • a frit 16 is positioned between the backplane substrate and a second glass (cover) substrate 18 .
  • the frit may, for example, be first dispensed onto the cover substrate. In some embodiments, the frit is first dispensed as a paste onto cover substrate 18 , then heated to sinter the frit and adhere it to the cover substrate.
  • the sintering may be performed in an oven.
  • Cover substrate 18 is then positioned in at least partial overlying registration with the backplane substrate, and the frit heated by an irradiation source 20 , such as laser 20 that emits laser beam 22 to soften the frit and form a hermetic seal between the cover substrate and the backplane substrate, thereby producing a hermetic glass package containing the OLED.
  • an irradiation source 20 such as laser 20 that emits laser beam 22 to soften the frit and form a hermetic seal between the cover substrate and the backplane substrate, thereby producing a hermetic glass package containing the OLED.
  • water present in glasses can be grouped into two broad categories: structural water where the water atoms (generally present as hydroxyl or OH ions) attach to the glass-forming polyhedra molecular structure during the melting process and become a basic part of the glass network; and surface water where, for example, water molecules present during ball-milling of a glass to produce a frit attach themselves during the milling to unsatisfied valence sites on the frit particle's surface created by broken bonds.
  • surface water can be removed by a simple drying process, such as by heating the glass of the frit, whereas structural water is much more tenaciously bound, and can persist in the glass during any drying step.
  • Water may take the form of a vapor phase (such as during outgassing, or as a hydroxyl ion, OH).
  • a glass is formed by conventional glass forming methods e.g. sol-gel or by heating granular batch materials (sands).
  • the resulting glass can then be melted, made into thin ribbon, and then ball-milled to a desired particle size.
  • a mean particle size of 3 ⁇ m is suitable for use in the manufacture of OLED devices.
  • the powdered frit glass may be blended with a filler to obtain a predetermined coefficient of thermal expansion of the frit blend.
  • a suitable coefficient of thermal expansion filler is beta eucryptite.
  • a paste is prepared by mixing the frit glass (or blended frit as the case may be) with an organic vehicle (e.g. texanol), an organic binder (e.g. ethylcellulose), and various dispersants and surfactants as needed.
  • the frit paste is then dispensed into a specific pattern (for example a loop or frame-like pattern) on a glass substrate, heated in air to burn-out the organics, and thereafter exposed to a subsequent heating to 400° C. in N 2 to presenter the frit.
  • the step of presintering consolidates the frit and adheres the frit to the (cover) substrate.
  • Laser-sealing the pre-sintered substrate to a mating substrate (backplane substrate) of one or more OLED devices is typically accomplished using a laser that traverses the consolidated frit, heats and softens the frit and whereupon a seal is formed between the cover substrate and the backplane substrate when the frit cools and solidifies.
  • the frit seal is heated above 400° C. for at least a few tenths of a second, causing structural water (i.e. OH) in the frit to be released, and possibly degrading the OLED.
  • a dry glass (and resulting dry frit) is defined as possessing a ⁇ -OH value equal to or less than about 0.3 mm ⁇ 1 , or alternatively an OH content equal to or less than about 20 ppm when measured by direct insertion probe mass spectrometry.
  • the glass comprises a ⁇ -OH value equal to or less than about 0.3 mm ⁇ 1 and an OH content equal to or less than about 20 ppm when measured by direct insertion probe mass spectrometry.
  • the glass exhibits no water detectable out-gassing by DIP-MS when reheated to 700° C. either as a coarse hand-ground powder, or as a fine (3 ⁇ m) ball-milled powder.
  • ⁇ -OH is a ratio of baseline transmittance to transmittance at the OH ⁇ absorption peak, and is directly proportional to hydroxyl ion concentration for glasses identical, or very similar, to each other in composition.
  • ref % T is the transmittance level at a nearby non-OH absorbing region
  • OH % T is the transmittance level at the base of the OH peak ( ⁇ 3380 cm ⁇ 1) and thk is the sample thickness (mm).
  • ⁇ -OH is directly proportional to the hydroxyl ion concentration for glasses identical, or very similar, to each other in composition. ⁇ -OH measurements provide the relative hydroxyl (OH) absorption coefficient for all hydroxyl ions in the glass, not just on those hydroxyls which will de-absorb over a specific temperature region. Any conventional infrared spectroscopy technique can be utilized for the measurements, such as Fourier transform infrared spectroscopy.
  • the DIP-MS arrangement shown diagrammatically in FIG. 3 , makes use of a heated probe 28 containing the sample to be tested 30 that is placed directly within the ionization region (electron impact ionizer 32 ) of the mass spectrometer 34 .
  • the exemplary DIP-MS arrangement if FIG. 3 further includes quadrapole ion analyzer 36 and detector 38 .
  • Wavy line 40 represents an ion path from sample 30 to detector 38 .
  • a quartz transfer tube and associated problems of deposition of chemical species, or permeability of the tube at high temperatures.
  • the DIP-MS measurement lends itself to more reliable quantitative analysis of chemical species.
  • FIG. 6 Shown in FIG. 6 are the results of a DIP-MS measurement conducted on a coarse hand-ground sample of a frit glass composition suitable for laser sealing of an OLED device showing the extracted ion chromatogram for water (and plotted a nano-Amperes as a function of. time in minutes).
  • the run was made on the Standard Schedule. A small amount of water outgassing from surface water was recorded in the first few minutes of the run as the sample was heated to 400° C. During the 4 hr hold at 400° C. (from 20 min to 260 min), no additional water out-gassing events were recorded, confirming that the initial water evolution was related to surface water. Once sample heating resumed, several discrete events related to water evolution are observed beginning at approximately 550° C.
  • halide compounds As noted in Table I, the use of halide compounds was found to be particularly effective for reducing structural water levels, as indicated by both the significantly-lowered ⁇ -OH levels of the halide-containing compositions, as well as by the complete absence of detectable water outgassing during the 400-700° heating ramp as detected by the DIP-MS measurement.
  • Table I provides a summary of the results for 4 compositions (C 2 -C 4 ) compared to a control composition (C 1 ) without a halide. Shown in FIG. 8 is a comparison of the high temperature portion of a DIP-MS scan for the non-halide containing C 1 sample, and the substantially identical C 2 sample with all Al 2 O 3 replaced by AlF 3 . Both materials were coarse, hand-ground glass powders.
  • the scan for the fluorine-containing glass (C 2 ) represented by curve 42 shows a featureless pattern with no distinct events.
  • the scan for the C 1 sample represented by curve 44 shows several discrete water evolution events occurring in the approximately 550-650° C. range.
  • the ⁇ -OH value for the C5 sample was higher that expected, and out of line with the other halide results, and is believed to be a result of poor sample preparation (as the ⁇ -OH measurement is sensitive to surface cleanliness of the sample). DIP-MS measurements for sample C3 and C4 were not conducted.
  • Table II Shown in Table II is a listing of the various process change experiments and the structural water level measured ( ⁇ -OH) and/or the quantity of structural water evolved (DIP-MS). As may be seen, these various experiments involved determining the effect of thermal cycling during melting (Experiment 1), air-calcining of the batch material with N 2 melting (Experiment 2), air-calcining of the batch material (either 485° or 600° C.) combined followed by air-melting (Experiments 3 and 4) of the batch material; melting all but the V 2 O 5 component of the basic glass, then re-melting with V 2 O 5 (Experiment 5); and re-melting standard cullet in an induction furnace and bubbling O 2 or N 2 /O 2 through the melt during re-melting (Experiments 6 and 7).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Glass Melting And Manufacturing (AREA)
US12/504,276 2008-10-20 2009-07-16 Method for forming a dry glass-based frit Abandoned US20100095705A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US12/504,276 US20100095705A1 (en) 2008-10-20 2009-07-16 Method for forming a dry glass-based frit
KR1020167001804A KR101662977B1 (ko) 2008-10-20 2009-10-16 드라이 유리계 프릿의 형성 방법
KR1020117011423A KR101621997B1 (ko) 2008-10-20 2009-10-16 드라이 유리계 프릿의 형성 방법
EP09740809A EP2349940A1 (en) 2008-10-20 2009-10-16 Method for forming a dry glass-based frit
JP2011533242A JP5718818B2 (ja) 2008-10-20 2009-10-16 乾燥ガラス系フリットを製造する方法
TW098135206A TWI410384B (zh) 2008-10-20 2009-10-16 形成乾式玻璃系玻璃料之方法
CN201610677859.5A CN106277796B (zh) 2008-10-20 2009-10-16 形成基于干玻璃的玻璃料的方法
CN200980142419.8A CN102186789B (zh) 2008-10-20 2009-10-16 形成基于干玻璃的玻璃料的方法
PCT/US2009/060956 WO2010048042A1 (en) 2008-10-20 2009-10-16 Method for forming a dry glass-based frit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10673008P 2008-10-20 2008-10-20
US12/504,276 US20100095705A1 (en) 2008-10-20 2009-07-16 Method for forming a dry glass-based frit

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US12/504,276 Abandoned US20100095705A1 (en) 2008-10-20 2009-07-16 Method for forming a dry glass-based frit
US12/622,569 Expired - Fee Related US8198203B2 (en) 2008-10-20 2009-11-20 Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit
US13/473,204 Expired - Fee Related US8434328B2 (en) 2008-10-20 2012-05-16 Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit

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US12/622,569 Expired - Fee Related US8198203B2 (en) 2008-10-20 2009-11-20 Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit
US13/473,204 Expired - Fee Related US8434328B2 (en) 2008-10-20 2012-05-16 Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit

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US (3) US20100095705A1 (enrdf_load_stackoverflow)
EP (2) EP2346789B1 (enrdf_load_stackoverflow)
JP (3) JP5718818B2 (enrdf_load_stackoverflow)
KR (3) KR101250174B1 (enrdf_load_stackoverflow)
CN (4) CN106277796B (enrdf_load_stackoverflow)
TW (2) TWI410384B (enrdf_load_stackoverflow)
WO (2) WO2010048042A1 (enrdf_load_stackoverflow)

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US20110067448A1 (en) * 2008-06-11 2011-03-24 Hamamatsu Photonics K.K. Fusion-bonding process for glass
US20110088430A1 (en) * 2008-06-23 2011-04-21 Hamamatsu Photonics K.K. Fusion-bonding process for glass
CN102231427A (zh) * 2011-06-30 2011-11-02 四川虹视显示技术有限公司 一种oled显示器件及其封装结构和封装方法
CN102231428A (zh) * 2011-06-30 2011-11-02 四川虹视显示技术有限公司 一种oled显示器件及其封装结构和封装方法
WO2011138169A1 (de) * 2010-05-07 2011-11-10 Osram Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement enthaltend alkalifreies und halogenfreies metallphosphat
JP2012509830A (ja) * 2008-11-24 2012-04-26 コーニング インコーポレイテッド 高ｃｔｅガラスのレーザ援用フリット封着及び得られる封着ガラスパッケージ
US20120234048A1 (en) * 2009-11-12 2012-09-20 Hamamatsu Photonics K.K. Glass welding method
US20120240628A1 (en) * 2009-11-25 2012-09-27 Hamamatsu Photonics K.K. Glass welding method and glass layer fixing method
US20120240629A1 (en) * 2009-11-25 2012-09-27 Hamamatsu Photonics K.K. Glass welding method and glass layer fixing method
US20120247153A1 (en) * 2009-11-25 2012-10-04 Hamamatsu Photonics K.K. Glass welding method and glass layer fixing method
WO2013032716A1 (en) * 2011-08-26 2013-03-07 Ferro Corporation Fire through aluminum paste for sinx and better bsf formation
WO2013166367A1 (en) * 2012-05-04 2013-11-07 Corning Incorporated Strengthened glass substrates with glass frits and methods for making the same
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