TWI762340B - 具備抗靜電破壞的光罩盒 - Google Patents

具備抗靜電破壞的光罩盒 Download PDF

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TWI762340B
TWI762340B TW110120013A TW110120013A TWI762340B TW I762340 B TWI762340 B TW I762340B TW 110120013 A TW110120013 A TW 110120013A TW 110120013 A TW110120013 A TW 110120013A TW I762340 B TWI762340 B TW I762340B
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photomask
groove
base
depth
box
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邱銘乾
莊家和
李怡萱
溫星閔
薛新民
林韻孜
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家登精密工業股份有限公司
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    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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Abstract

一種具備抗靜電破壞的光罩盒，包含一底座及複數個支撐元件。底座 具有一承載面，該承載面形成有一凹槽，該凹槽具有一底面。支撐元件圍繞該底座的承載面並配置成支撐一光罩。該凹槽具有一深度，該深度於該承載面至該底面之間延伸，該深度介於300μm至3400μm之間，藉此削弱該承載面上微粒所受的靜電力。

Description

具備抗靜電破壞的光罩盒
本發明關於一種光罩盒，特別是一種具有抗靜電破壞能力的光罩盒結構。
目前極紫外光(EUV)製程中，所涉及的光罩需以專用的EUV光罩盒保護。第一圖顯示一種用於容置所述EUV光罩的光罩盒，具有由一外盒(100)及一內盒(110)所定義而成的內層和外層容置空間。外盒(100)包含一盒蓋(101)和一底座(102)，兩者結合定義出容置該內盒(110)的一容置空間。內盒(110)包含一盒蓋(111)和一底座(112)，其經由特殊的手段結合以定義出具密封效果的一容置空間來容置一光罩(120)。
具體而言，當光罩(120)被容置在內盒(110)中時，光罩(120)的邊緣或底部由底座(112)上的多個支撐元件(1121)所支撐，使光罩(112)的朝下表面略高於光罩(120)的一朝上承載面(1122)。所述朝上承載面(1122，後簡稱承載面)是由多個支撐元件(1121)所圍繞的面，且承載面(1122)的面積一般大於光罩(120)的圖案區域面積(圖中未示)。此 外，所述承載面(1122)與位於底座(112)周圍用於接觸盒蓋(111)的朝上接觸面(1123)不同，朝上接觸面(1123)一般是環狀表面。
當光罩(120)從曝光設備中取出時，光罩(120)會殘留一定電壓，一般大於50V。若將具有該狀態下的光罩(120)放回內盒(110)，底座(112)上的微粒則可能被吸附至光罩(120)底部，而當微粒附著在光罩(120)的圖案區域，該光罩(120)在下一次曝光程序中會產生圖型缺陷。
第二圖示意帶電荷光罩(120)接近底座(112)的一連續過程。以帶負電荷的光罩(120)靠近底座(112)，其中該底座(112)因接地而不帶電荷，但底座(112)的一上表面(如前述承載面1122)存在一微粒(P)。當帶電光罩(120)靠近底座(112)達某一程度，光罩(120)的負電荷所產生的電場會引起底座(112)的上表面連同微粒(P)產生正電荷。當光罩(120)更接近底座(112)，所述靜電場的強度則足以吸引微粒(P)，使微粒(P)脫離底座(112)的上表面而附著至光罩(120)的底部。顯然，將底座(112)接地仍無法克服所有靜電產生的缺陷。
有鑑於此靜電所帶來的光罩缺陷，有必要發展一種具備抗靜電破壞的光罩盒來容置上述帶有靜電荷的光罩。
第三圖示意微粒(P)受到重力(Fw)和靜電力(Fe)的作用，其中F為合力，q為電荷量，E為靜電場，m為微粒的質量，g為重力常數，V為電壓，d為光罩的底部至底座的上表面之間距。換言之，引起底座上的微粒 (P)附著至光罩底部的因素，可包含微粒的尺寸(重量)、光罩帶電量及光罩底部至底座上表面的距離。
據此，本發明的目的在於提出一種具備抗靜電破壞的光罩盒，包含：一底座，具有一承載面，該承載面形成有一凹槽，該凹槽具有一底面；及複數個支撐元件，圍繞該底座的承載面並配置成支撐一光罩，使該凹槽具有一深度，該深度於該承載面至該底面之間延伸，該深度介於300μm至3400μm之間，藉此削弱該承載面上微粒所受的靜電力。
在一具體實施例中，該底座還具有一朝上接觸面，該朝上接觸面圍繞該承載面，且該朝上接觸面用於接觸一盒蓋以形成密封的一容置空間。
在一具體實施例中，該凹槽具有一環形邊緣，該環形邊緣圍繞的一區域面積等於或大於該光罩的一圖案區域面積。
在一具體實施例中，該凹槽具有一環形邊緣，該環形邊緣圍繞的一區域足以涵蓋該光罩的一圖案區域。
在一具體實施例中，該凹槽具有一矩形邊緣，該矩形邊緣具有一長度和一寬度，該長度為138mm，該寬度為110mm。
在一具體實施例中，該光罩的一殘留電壓大於50V，該深度至少大於400μm。
本發明的另一目的在於提出一種具備抗靜電破壞的光罩盒，包含：一底座，具有一上表面，該上表面為機械加工所形成的一撓曲表面；及複數個支撐元件，圍繞該上表面並配置成支撐一光罩，使該光罩的一朝下表面與該上表面之間形成一間距，該間距至少大於300μm之間，藉此削弱該上表面上微粒所受的靜電力。
在一具體實施例中，該底座還具有一朝上接觸面，該朝上接觸面圍繞該上表面，且該朝上接觸面用於接觸一盒蓋以形成密封的一容置空間。
在一具體實施例中，該上表面的一面積等於或大於該光罩的一圖案區域面積。
在一具體實施例中，該上表面的一區域足以涵蓋該光罩的一圖案區域。
在一具體實施例中，該上表面具有一矩形邊緣，該矩形邊緣具有一長度和一寬度，該長度為138mm，該寬度為110mm。
在一具體實施例中，該光罩的一殘留電壓大於50V，該間距至少大於400μm。
本發明的尚一目的在於提出一種光罩盒的加工方法，實施於一光罩盒的一底座，該底座具有一承載面及複數個支撐元件，該複數個支撐元件圍繞該底座的承載面並配置成支撐一光罩。該加工方法包含：以機械加工該承載面而使該承載面上形成有一凹槽，該凹槽具有一底面；因應該光罩具有一殘留電壓，加工該凹槽使該凹槽具有一深度，，該深度至少大於300μm。
在一具體實施例中，當該殘留電壓大於50V，該深度至少大於400μm。
在一具體實施例中，當該殘留電壓大於100V，該深度至少大於400μm。
在一具體實施例中，當該殘留電壓大於200V，該深度大至少於800μm。
在一具體實施例中，當該殘留電壓大於400V，該深度至少大於1600μm。
100:外盒
101:盒蓋
102:底座
110:內盒
111:盒蓋
112:底座
1121:支撐元件
1122:朝上承載面、承載面
1123:朝上接觸面
120:光罩
P:微粒
200:外盒
201:盒蓋
202:底座
210:內盒
211:盒蓋
212:底座
2121:支撐元件
2122:承載面
2123:朝上接觸面
2124:凹槽
220:光罩
600:底面
601:壁
D:深度
800:定位結構
900:光罩
901:光罩圖案區域
902:凹槽區域
903:底面
904:下表面
G:間距
1001:圍牆
1002:上表面
1003:朝上接觸面
參照下列圖式與說明，可更進一步理解本發明。非限制性與非窮舉性實例系參照下列圖式而描述。在圖式中的構件並非必須為實際尺寸；重點在於說明結構及原理。
第一圖例示一種已知光罩盒的分解圖。
第二圖示意帶電光罩接近光罩盒底座的一連續過程。
第三圖示意一微粒受到靜電力和重力的作用。
第四圖例示本發明光罩盒的分解圖。
第五圖例示光罩盒底座的一立體圖。
第六圖為根據第五圖的一剖面圖。
第七圖為第五圖光罩盒底座的一俯視圖。
第八圖為第五圖光罩盒底座的一仰視圖。
第九A圖示意光罩圖案區域和凹槽涵蓋區域的關係；第九B圖示意光罩與凹槽底面之間的間距。
第十圖為光罩盒底座的另一實施例的立體圖。
第十一A圖至第十一D圖說明光罩的不同殘留電壓、不同微粒尺寸及不同間距對於微粒所受淨力(net force)的影響。
底下將參考圖式更完整說明本發明，並且藉由例示顯示特定範例具體實施例。不過，本主張主題可具體實施於許多不同形式，因此所涵蓋或申請主張主題的建構並不受限於本說明書所揭示的任何範例具體實施例；範例具體實施例僅為例示。同樣，本發明在於提供合理寬闊的範疇給所申請或涵蓋之主張主題。
本說明書內使用的詞彙「在一實施例」並不必要參照相同具體實施例，且本說明書內使用的「在其他(一些/某些)實施例」並不必要參照不同的具體實施例。其目的在於例如主張的主題包括全部或部分範例具體實施例的組合。
第四圖例示本發明光罩盒的一分解圖，其如同第一圖的配置包含一外盒(200)及一內盒(210)。外盒(200)還包含一盒蓋(201)和一底座(202)，兩者定義容置內盒(210)的容置空間。內盒(210)還包含一盒蓋(211)和一底座(212)，兩者定義容納一光罩(220)的容置空間。本發明的改良主要在於底座(212)的結構，外盒(200)及內盒盒蓋(211)的其他細節將在後續描述中省略。
底座(212)具有複數個支撐元件(2121)、一朝上承載面(之後簡稱承載面2122)及一朝上接觸面(2123)。支撐元件(2121)位於承載面(2122)和朝上接觸面(2123)之間，且環繞著承載面(2122)。支撐元件(2121)可配置成不同的態樣以支撐光罩(220)的底部或側面邊緣。舉例而言，本實施例的每一個支撐元件(2121)具有用於限制光罩(220)橫向位移的兩個限位柱以及用於接觸光罩的朝下表面而將光罩抬升於承載面(2122)上方的一支撐銷。支撐銷的高度可決定光罩朝下表面至承載面(2122)之間的一間 距。承載面(2122)基本上為一平面，但實際上承載面(2122)的至少一部份有因為機械加工而形成的撓曲表面，其通常無法為肉眼所識別。承載面(2122)還加工形成有一凹槽(2124)，凹槽(2124)大致上位於承載面(2122)的中央且被承載面(2122)環繞。當光罩(220)被放置在支撐元件(2121)上時，光罩(220)的圖案區會正對著凹槽(2124)。
第五圖顯示較多的底座(212)細節，而第六圖顯示根據第五圖虛線的剖面圖。可以看到承載面(2122)和底座(212)周圍的朝上接觸面(2123)之間形成有一溝槽(未編號)，其用於捕捉盒蓋(211)和底座(212)結合時從兩者之間進入的微粒。第六圖清楚顯示承載面(2122)高於朝上接觸面(2123)，這樣的配置有助於創造結構障礙，增加所述微粒落在承載面(2122)的困難度，確保內盒(210)的潔淨度。在其他可能的實施例中，承載面(2122)和朝上接觸面(2123)可以是相同的高度或者承載面(2122)較低，溝槽也可以被填滿。凹槽(2124)是由一底面(600)和一壁(601)所定義而成，使凹槽(2124)具有一深度(D)。所述深度(D)為加工深度，亦指自承載面(2122)至凹槽底面(600)的垂直落差，如圖示靠近壁(601)的深度(D)。由於凹槽(2124)也是經由機械加工成形，底面(600)可能存在撓曲(deflection)的現象。
第七圖顯示第五圖底座(212)的俯視圖，其中可看到凹槽(2124)的開口(即由承載面的內緣定義而成)和底面(600)為一矩形，且開口和底面(600)的面積大致上相同。在一實施例中，所述矩形的長度為138mm，寬度為110mm。凹槽(2124)的位置大致上位於承載面(2122)的中央，未靠近任何一側。第八圖顯示第五圖底座(212)的仰視圖，可看見底座 (212)的底部配置有多個定位結構(800)，其用於將底座(212)定位於製程機台中。
第九A圖為俯視視角，其主要示意一光罩(900)的一光罩圖案區域(901，由實線圍繞而成)與底座凹槽區域(902)的關係。可看到，虛線可為定義所述凹槽開口的一環形邊緣，其定義凹槽區域(902)至少大於光罩圖案區域(901)。在這樣的配置下，確保光罩圖案區域的每一個位置都面對凹槽的底面。第九B圖為側視角，其主要示意光罩圖案區域(901)的朝下表面與凹槽的底面(903)之間存在一間距(G)。根據光罩被支撐的所在高度，光罩的下表面(904)的高度可以非常接近底座的承載面高度，亦即光罩的下表面(904)與凹槽的底面(600)之間距離相當於凹槽的深度(如第六圖所示深度D)。在一實施例中，凹槽的所述深度(D)界於300μm至3400μm之間，或3400μm至3750μm之間。換言之，間距(G)至少大於300μm。據此，當一帶靜電的光罩被放置於底座上時，藉由該凹槽深度(D)或間距(G)的控制可有效削弱底座承載面上微粒所受的靜電力，降低微粒被吸引至光罩朝下表面的機會。
第十圖顯示本發明底座的另一實施例。與第五圖相比，可看到第十圖底座中的承載面的區域已被大幅縮減而凹槽涵蓋的區域則增加，形成由一圍牆(1001)環繞的一上表面(1002)，且圍牆(1001)的高度仍高於朝上接觸面(1003)以增加汙染微粒進入上表面(1002)的困難度。在某些實施例中，圍牆(1001)可被省略，而僅由如圖中的溝槽將朝上接觸面和上表面隔開。同樣地，當放置於底座上的光罩的一朝下表面與上表面(1002)之間形成有一間距，且恰當控制上表面(1002)的深度，例如圍牆(1001)的垂直高度 界於300μm至3400μm之間，或使光罩的下表面與上表面(1002)之間的間距至少大於300μm，則可有效削弱底座的上表面少微粒所受靜電力。
第十一A圖至第十一D圖說明光罩的不同殘留電壓、不同微粒尺寸及不同凹槽深度對於微粒所受淨力的影響。第十一A圖顯示六種尺寸的微粒在如第六和九B圖所示意的配置中，尤其這些微粒是位在凹槽底面(903)上且光罩的殘留電壓為400V，該深度(D)與微粒所受淨力(net force)的關係曲線，在這當中可看到當深度大於1600μm時，所有微粒的淨力轉為負值代表微粒的受力方向朝下，意即有效削弱這些微粒受到的靜電力。同樣地，第十一B圖顯示這些尺寸的微粒在光罩的殘留電壓為200V的環境中，該深度(D)與微粒所受淨力的關係曲線，在這當中可看到當深度大於800μm時，可有效削弱這些微粒受到的靜電力。第十一C圖顯示這些尺寸的微粒在光罩的殘留電壓為100V的環境中，該深度(D)與微粒所受淨力的關係曲線，在這當中可看到當深度大於400μm時，可有效削弱這些微粒受到的靜電力。第十一D圖顯示這些尺寸的微粒在光罩的殘留電壓為50V的環境中，該深度(D)與微粒所受淨力的關係曲線，在這當中可看到當深度大於400μm時，可有效削弱這些微粒受到的靜電力。儘管圖中未以顏色區分各尺寸微粒的曲線，但本領域技術者根據圖式揭露內容仍足以區別各曲線的趨勢差異而理解上述說明。
基於上述說明可知，本發明提出一種光罩盒，藉由控制光罩盒底座中的的凹槽加工深度或凹槽底面表面(上表面)與光罩朝下表面之間的間距，而有效削弱光罩殘留電壓對於底座表面微粒的影響，進而降低微粒被吸引至光罩的朝下表面，避免圖案區遭汙染。
212:底座
2121:支撐元件
2122:承載面
2123:朝上接觸面
2124:凹槽

Claims (17)

  1. 一種具備抗靜電破壞的光罩盒，包含：一底座，具有一承載面，該承載面形成有一凹槽，該凹槽具有一底面；及複數個支撐元件，圍繞該底座的承載面並配置成支撐一光罩，其中該凹槽具有一深度，該深度於該承載面至該底面之間延伸，該深度介於300μm至3400μm之間，藉此削弱該承載面上微粒所受的靜電力。
  2. 如請求項1所述之光罩盒，其中該底座還具有一朝上接觸面，該朝上接觸面圍繞該承載面，且該朝上接觸面用於接觸一盒蓋以形成密封的一容置空間。
  3. 如請求項1所述之光罩盒，其中該凹槽具有一環形邊緣，該環形邊緣圍繞的一區域面積等於或大於該光罩的一圖案區域面積。
  4. 如請求項1所述之光罩盒，其中該凹槽具有一環形邊緣，該環形邊緣圍繞的一區域足以涵蓋該光罩的一圖案區域。
  5. 如請求項1所述之光罩盒，其中該凹槽具有一矩形邊緣，該矩形邊緣具有一長度和一寬度，該長度為138mm，該寬度為110mm。
  6. 如請求項1所述之光罩盒，其中該光罩的一殘留電壓大於50V，該深度至少大於400μm。
  7. 一種具備抗靜電破壞的光罩盒，包含：一底座，具有一上表面，該上表面為機械加工所形成的一撓曲表面；及 複數個支撐元件，圍繞該上表面並配置成支撐一光罩，使該光罩的一朝下表面與該上表面之間形成一間距，該間距至少大於300μm，藉此削弱該上表面上微粒所受的靜電力。
  8. 如請求項7所述之光罩盒，其中該底座還具有一朝上接觸面，該朝上接觸面圍繞該上表面，且該朝上接觸面用於接觸一盒蓋以形成密封的一容置空間。
  9. 如請求項7所述之光罩盒，其中該上表面的一面積等於或大於該光罩的一圖案區域面積。
  10. 如請求項7所述之光罩盒，其中該上表面的一區域足以涵蓋該光罩的一圖案區域。
  11. 如請求項7所述之光罩盒，其中該上表面具有一矩形邊緣，該矩形邊緣具有一長度和一寬度，該長度為138mm，該寬度為110mm。
  12. 如請求項7所述之光罩盒，其中該光罩的一殘留電壓大於50V，該間距至少大於400μm。
  13. 一種光罩盒的加工方法，實施於一光罩盒的一底座，該底座具有一承載面及複數個支撐元件，該複數個支撐元件圍繞該底座的承載面並配置成支撐一光罩，該加工方法包含：以機械加工該承載面而使該承載面上形成有一凹槽，該凹槽具有一底面；因應該光罩具有一殘留電壓，加工該凹槽使該凹槽具有一深度，該深度至少大於300μm。
  14. 如請求項13所述之方法，其中當該殘留電壓大於50V，該深度至少大於400μm。
  15. 如請求項13所述之方法，其中當該殘留電壓大於100V，該深度至少大於400μm。
  16. 如請求項13所述之方法，其中當該殘留電壓大於200V，該深度至少大於800μm。
  17. 如請求項13所述之方法，其中當該殘留電壓大於400V，該深度至少大於1600μm。
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