CN114334751A - 具有防碰撞间隙结构的光掩模盒 - Google Patents

具有防碰撞间隙结构的光掩模盒 Download PDF

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CN114334751A
CN114334751A CN202110800663.1A CN202110800663A CN114334751A CN 114334751 A CN114334751 A CN 114334751A CN 202110800663 A CN202110800663 A CN 202110800663A CN 114334751 A CN114334751 A CN 114334751A
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photomask
gap
base
top surface
cassette
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邱铭乾
庄家和
李怡萱
温星闵
薛新民
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Gudeng Precision Industrial Co Ltd
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Gudeng Precision Industrial Co Ltd
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    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C17/00—Arrangements for transmitting signals characterised by the use of a wireless electrical link
    • G08C17/02—Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
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    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67363—Closed carriers specially adapted for containing substrates other than wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
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Abstract

本发明提供一种具有防碰撞间隙结构的光掩模盒，用以容置一光掩模。光掩模盒包含：一基座及多个支撑装置。支撑装置设于该基座上，支撑该光掩模，该光掩模的一底面的一外围区域与该基座的一朝上顶面之间形成一第一间隙，该基座的底面的一中央区域与该基座的朝上顶面之间形成一第二间隙，其中该中央区域受该外围区域围绕，该第二间隙大于第一间隙。本发明的光掩模盒，通过形成第一间隙和第二间隙，使该光掩模与该基座在互动的过程中光掩模被撞击或被刮伤的机率降低，以保护该光掩模，且第一间隙和第二间隙的配置，使该光掩模自该基座被拿起时不易引起严重的气流扰动使粒子附着于光掩模底面，以保护该光掩模图案区域不受到污染。

Description

具有防碰撞间隙结构的光掩模盒
技术领域
本发明是关于一种防止光掩模与光掩模盒基座撞击或刮伤撞造成光掩模损坏，并保护光掩模的光掩模盒的技术。
背景技术
目前极紫外光EUV(Extreme Ultraviolet)的工艺中，光掩模需要使用光掩模盒于运输及储存时保护该光掩模，以避免因碰撞或摩擦等产生微粒影响光掩模的洁净度，进而影响最终产品质量。
为防止光掩模受到污染，光掩模盒需要稳定地固定光掩模，以避免光掩模在光掩模盒中产生摩擦或位移造成损坏，因此光掩模与光掩模盒间的接触面积应越小越好，以避免光掩模与光掩模盒中的固定件或支撑件之间接触或摩擦造成损坏，且光掩模与光掩模盒之间需要保持适当的距离，以避免光掩模与光掩模盒两者碰触而损坏。
因此，如何制造一种光掩模盒中的基座与光掩模之间具有适当的间隙，以防止光掩模与基座的互动过程(如以机械手臂拿取、放置光掩模)中光掩模受到损伤或污染，为目前产业亟需解决的问题。
发明内容
本发明的目的在于提供一种防止光掩模与基座撞击或刮伤造成光掩模损坏，并保护光掩模的光掩模盒。
达到上述目的的本发明光掩模盒，包含：一基座；以及多个支撑装置，设于该基座上，支撑该光掩模，该光掩模的一底面的一外围区域与该基座的一朝上顶面之间形成一第一间隙，该基座的底面的一中央区域与该基座的朝上顶面之间形成一第二间隙，其中该中央区域受该外围区域围绕，该第二间隙大于第一间隙。
较佳地，该基座具有环绕该朝上顶面的一支撑面，该支撑面为一环状平面。
较佳地，该第一间隙为0.18至0.30mm。
较佳地，该第二间隙的为1.50mm以上。
较佳地，面对该光掩模的该基座的朝上顶面，具有小于0.06mm的平面度。
较佳地，该第一间隙是指该光掩模的底面的外围区域至该基座的朝上顶面的最小距离，该第二间隙是指该光掩模的底面的中央区域至该基座的朝上顶面的最小距离。
较佳地，该光掩模的底面的中央区域至少涵盖该光掩模的一图案区域。
较佳地，该基座的朝上顶面具一挠曲面(deflectionsurface)。
较佳地，该外围区域具有一外缘和一内缘，该外围区域在该外缘和该内缘之间延伸，且该外缘和该内缘之间的距离小于5毫米。
本发明的光掩模盒，通过该光掩模的中央区域与该基座间所形成的第二间隙大于该光掩模的外围区域的底面与该基座间所形成的第一间隙，使该光掩模与该基座在互动的过程中光掩模被撞击或被刮伤的机率降低，以保护该光掩模，且第一间隙和第二间隙的配置，使该光掩模自该基座被拿起时不易引起严重的气流扰动使粒子附着于光掩模底面，以保护该光掩模图案区域不受到污染。
附图说明
以下附图仅旨在于对本发明做示意性说明和解释，并不限定本发明的范围。在图式中的部件并非必须为实际尺寸；重点在于说明结构及原理。其中：
图1是显示本发明的光掩模盒的分解立体图。
图2是显示本发明的光掩模盒的光掩模置于基座的组合立体图。
图3是显示本发明的光掩模盒的部分侧视剖面图。
图4是显示本发明的光掩模盒具有基座表面挠曲的示意图。
附图标号说明：
100---光掩模盒
1---光掩模
10---基座
11---朝上顶面
12---支撑面
13---外围区域
131---外缘
132---内缘
14---向下凹曲面
15---中央区域
20---支撑装置
21---支撑销
22---定位件
30---盖体
d1---第一间隙
d2---第二间隙
具体实施方式
以下将参考附图更完整说明本发明，并且通过例示显示特定范例具体实施例。不过，本主张主题可具体实施于许多不同形式，因此所涵盖或申请主张主题的建构并不受限于本说明书所揭示的任何范例具体实施例；范例具体实施例仅为例示。同样，本发明在于提供合理宽阔的范畴给所申请或涵盖的主张主题。除此之外，例如主张主题可具体实施为方法、装置或系统。因此，具体实施例可采用例如硬件、软件、韧体或这些的任意组合(已知并非软件)的形式。
本说明书内使用的词汇“一实施例”并不必要参照相同具体实施例，且本说明书内使用的“其他(一些/某些)实施例”并不必要参照不同的具体实施例。其目的在于例如主张的主题包括全部或部分范例具体实施例的组合。
请参考图1，显示本发明的光掩模盒的分解立体图，尤其图中所示光掩模盒属于极紫外光光掩模内盒(EUV reticle inner pod)的部分，而光掩模外盒的部分省略未示。本发明的光掩模盒100，用以容置一光掩模1，该光掩模盒100包含：一基座10；以及多个支撑装置20，各支撑装置20设于该基座10上，且每一个支撑装置20具有一支撑销21及两个定位件22，该等支撑销21供支撑该光掩模1，并通过该定位件22将该光掩模1支撑和限制于基座10上。
在一实施例中，支撑装置20的支撑高度经选择，使该光掩模1的底面与该基座10的一朝上顶面11间形成一第一间隙d1(请参考图3)。然而，在一机械加工的结果中，基座10的朝上顶面11会存在挠曲的现象，而导致该光掩模1的底面上相对于一外围区域13的一中央区域15与该基座10间形成大于第一间隙d1的一第二间隙d2(请参考图4)。所述第一间隙d1和第二间隙d2是指光掩模1的外围区域13和外围区域13所围绕的区域(光掩模的中央区域15)分别与基座10的朝上顶面11之间存在的最小距离。
本发明的光掩模盒100还包含一盖体30，该盖体30用以结合至基座10并覆盖于该光掩模1上。相接触的基座10和盖体30形成一用于容置光掩模1的容置空间。额外密封的手段可提供于光掩模盒100中，以将该基座10与该盖体30内的环境与其外部的环境流体隔绝，此阻止内外环境间的气体流动，故可有效杜绝光掩模1受到污染，并可保护该光掩模1不受到撞击损坏。由于本发明主要着重于光掩模1与基座10之间的关系，盖体30的其他细节不在此赘述。
请继续参考图1并配合参考图2及图3，该图2显示本发明的光掩模盒的光掩模置于基座的立体图，而图3显示本发明的光掩模盒的侧视示意图。本发明的光掩模盒100的基座10具有一朝上顶面11(本文简称顶面)与至少一环绕该朝上顶面11的支撑面12。该支撑面12为一环状平面，用于和盖体30的一朝下环状表面(未显示)接触，并且该支撑面12与该朝上顶面11之间形成有一沟槽，而该支撑装置20置于该朝上顶面11与支撑面12之间，使这些支撑装置20围绕着朝上顶面11。于本实施例中，该支撑装置20的该支撑销21是置于两个定位件22之间，通过该定位件22限制该光掩模1的四个角隅置放的位置，而该支撑销21使该光掩模1平稳地置于该基座10上，且使该光掩模1的一底面与该基座10的朝上顶面11间形成该第一间隙d1。更具体而言，支撑装置20的支撑高度是经由选择，使得靠近支撑装置20的光掩模1的一部分底面与对应基座10的朝上顶面11之间垂直距离控制在第一间隙d1的程度。如图2所示，与第一间隙d1对应的光掩模1区域大约是沿着光掩模1边缘环绕而形成的一外围区域13。于本实施例中，与该外围区域13对应的光掩模1的底面与基座10的朝上顶面11间所形成的该第一间隙d1为0.18毫米～0.30毫米(mm)。所述外围区域13是指从光掩模1的边缘向光掩模1的中央处延伸的一区域，其大约是在支撑装置20的附近，但外围区域13不一定是呈矩形环。在一实施例中，而外围区域13的一外缘131和一内缘132之间的距离为小于5毫米的范围。
请继续参考图3并配合参考图4，该图4是显示本发明的光掩模盒的基座因机械加工而产生挠曲的示意图。一般基座的朝上顶面11，在视觉上，虽然是一平坦的，如图2所示，但实际上，于加工过程中的低频因素会导致基座10的朝上顶面11产生挠曲，因此，实际上该基座10的朝上顶面11呈现一向下凹曲面14，如图3所示。意即，光掩模1的底面的一中央区域15与基座10的对应朝上顶面11之间的垂直距离(即第二间隙d2)略大于光掩模1的底面的周围区域13与基座10的对应朝上顶面11的垂直距离(即第一间隙d1)。该光掩模1与该基座10的朝上顶面11间所形成的该第二间隙d2，是由该光掩模1底部的中央区域15域至该基座10的向下凹曲面14间的间隙，该第二间隙d2对应的光掩模1区域是位于该外围区域13所围绕的范围区域中。在一实施例中，支撑装置20的高度经由选择，而使得第二间隙d2保持在1.50毫米(mm)以上，较该第一间隙d1为大，以使于机械手臂取放该光掩模1于基座10时，因该光掩模1与该基座10间有着第一间隙d1和第二间隙d2的配置，使光掩模1与基座10撞击或刮伤的机率降低，进而保护该光掩模1。
所述第一间隙d1对应的光掩模外围区域13与所述第二间隙d2对应的光掩模中央区域15不必然是有连续关系的。意即第二间隙d2所对应的光掩模1中央区域15还小于外围区域13所围绕的整体区域。例如，所述第二间隙d2对应的光掩模中央区域15为至少可涵盖光掩模上的一图案区域。
另外，在一较佳实施例中，面对该光掩模1底面的该基座10的顶面(如图3的朝上朝上顶面11或图4的向下凹曲面14)，其平面度小于0.06mm，该平面度是指工件某一表面的一真实平面与一理想平面(如完美平面)之间的偏差。关于平面度的定义，可参考中国台湾专利申请第110101422号的描述。当光掩模1与基座10的接触呈现出所述第一间隙d1和第二间隙d2的关系时，基座10的朝上顶面11的平面度小于0.06mm有助于使光掩模1和基座10相互碰撞的机率进一步降低。
本发明的光掩模盒，通过该光掩模的中央区域与该基座间所形成的第二间隙大于该光掩模的外围区域的底面与该基座间所形成的第一间隙，使该光掩模与该基座在互动的过程中光掩模被撞击或被刮伤的机率降低，以保护该光掩模，且第一间隙和第二间隙的配置，使该光掩模自该基座被拿起时不易引起严重的气流扰动使粒子附着于光掩模底面，以保护该光掩模图案区域不受到污染。
光掩模1的底面与基座10的朝上顶面11之间的垂直距离的测量可经由已知的手段获得。举例而言，针对第一间隙d1的测量，可先决定光掩模1的外围区域13涵盖范围，接着在与外围区域13对应的朝上顶面11区域上决定多个测量位置，并使用已知手段得知这些测量位置与光掩模1的底面之间的垂直距离，在这些获得的垂直距离中以一最小值作为光掩模1外围区域13与基座10的朝上顶面11之间的所述第一间隙d1。同样地，针对第二间隙d2的测量，可先决定光掩模1外围区域13所围绕的一中央区域15，例如至少是可涵盖光掩模图案的区域，接着在与所述中央区域15对应的朝上顶面11区域上决定多个测量位置(如35个)，并使用已知手段得知这些测量位置与光掩模1底面之间的垂直距离，在这些获得的垂直距离中以一最小值作为光掩模1的中央区域15与基座10的朝上顶面11之间的所述第二间隙d2。
虽然为了清楚了解已经用某些细节来描述前述本发明，吾人将了解在申请专利范围内可实施特定变更与修改。因此，以上实施例仅用于说明，并不设限，并且本发明并不受限于此处说明的细节，但是可在附加的申请专利范围的领域及等同者下进行修改。

Claims (9)

1.一种光掩模盒，用以容置一光掩模，其特征在于，该光掩模盒包含：
一基座；以及
多个支撑装置，设于该基座上，支撑该光掩模，该光掩模的一底面的一外围区域与该基座的一朝上顶面之间形成一第一间隙，该基座的底面的一中央区域与该基座的朝上顶面之间形成一第二间隙，其中该中央区域受该外围区域围绕，该第二间隙大于第一间隙。
2.如权利要求1所述的光掩模盒，其特征在于，该基座具有环绕该朝上顶面的一支撑面，该支撑面为一环状平面。
3.如权利要求1所述的光掩模盒，其特征在于，该第一间隙为0.18至0.30mm。
4.如权利要求1所述的光掩模盒，其特征在于，该第二间隙的为1.50mm以上。
5.如权利要求1所述的光掩模盒，其特征在于，面对该光掩模的该基座的朝上顶面，具有小于0.06mm的平面度。
6.如权利要求1所述的光掩模盒，其特征在于，该第一间隙是指该光掩模的底面的外围区域至该基座的朝上顶面的最小距离，该第二间隙是指该光掩模的底面的中央区域至该基座的朝上顶面的最小距离。
7.如权利要求1所述的光掩模盒，其特征在于，该光掩模的底面的中央区域至少涵盖该光掩模的一图案区域。
8.如权利要求1所述的光掩模盒，其特征在于，该基座的朝上顶面具一挠曲面。
9.如权利要求1所述的光掩模盒，其特征在于，该外围区域具有一外缘和一内缘，该外围区域在该外缘和该内缘之间延伸，且该外缘和该内缘之间的距离小于5毫米。
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