TWI802907B - 具有防碰撞間隙結構的光罩盒 - Google Patents

具有防碰撞間隙結構的光罩盒 Download PDF

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TWI802907B
TWI802907B TW110121352A TW110121352A TWI802907B TW I802907 B TWI802907 B TW I802907B TW 110121352 A TW110121352 A TW 110121352A TW 110121352 A TW110121352 A TW 110121352A TW I802907 B TWI802907 B TW I802907B
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photomask
base
gap
top surface
reticle
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TW202215147A (zh
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邱銘乾
莊家和
李怡萱
溫星閔
薛新民
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家登精密工業股份有限公司
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    • GPHYSICS
    • G08SIGNALLING
    • G08CTRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C17/00Arrangements for transmitting signals characterised by the use of a wireless electrical link
    • G08C17/02Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735Closed carriers
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975Assembly, maintenance, transport or storage of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741Handling masks outside exposure position, e.g. reticle libraries
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075Handling workpieces outside exposure position, e.g. SMIF box
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/6735Closed carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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    • H01L21/67363Closed carriers specially adapted for containing substrates other than wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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    • H01ELECTRIC ELEMENTS
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K5/0208Interlock mechanisms; Means for avoiding unauthorised use or function, e.g. tamperproof

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Abstract

本發明提供一種光罩盒,用以容置一光罩。光罩盒,包含:一基座及複數個支撐裝置。支撐裝置設於該基座上,支撐該光罩,該光罩的一底面的一外圍區域與該基座的一朝上頂面之間形成一第一間隙,該基座的底面的一中央區域與該基座的朝上頂面之間形成一第二間隙,其中該中央區域受該外圍區域圍繞,該第二間隙大於第一間隙。

Description

具有防碰撞間隙結構的光罩盒
本發明係關於一種防止光罩與光罩盒基座撞擊或刮傷撞造成光罩損壞,並保護光罩之光罩盒的技術。
目前EUV(Extreme Ultraviolet)的製程中,光罩需要使用光罩盒於運輸及儲存時保護該光罩,以避免因碰撞或摩擦等產生微粒影響光罩的潔淨度,進而影響最終產品品質。
為防止光罩受到汙染,光罩盒需要穩定地固定光罩,以避免光罩在光罩盒中產生摩擦或位移造成損壞,因此光罩與光罩盒間的接觸面積應越小越好,以避免光罩與光罩盒中的固定件或支撐件之間接觸或摩擦造成損壞,且光罩與光罩盒之間需要保持適當的距離,以避免光罩與光罩盒二者碰觸而損壞。
因此,如何製造一種光罩盒中之基座與光罩之間具有適當的間隙,以防止光罩與基座的互動過程(如以機械手臂拿取、放置光罩)中光罩受到損傷或汙染,為目前產業亟需解決之問題。
本發明之目的在於提供一種防止光罩與基座撞擊或刮傷造成光罩損壞,並保護光罩之光罩盒。
達到上述目的之本發明光罩盒,包含:一基座;以及複數個支撐裝置,係設於該基座上,支撐該光罩,該光罩的一底面的一外圍區域與該基座的一朝上頂面之間形成一第一間隙,該基座的底面的一中央區域與該基座的朝上頂面之間形成一第二間隙,其中該中央區域受該外圍區域圍繞,該第二間隙大於第一間隙。
較佳地,該基座具有環繞該朝上頂面之一支撐面,該支撐面為一環狀平面。
較佳地,該第一間隙為0.18至0.30mm。
較佳地,該第二間隙的為1.50mm以上。
較佳地,面對該光罩的該基座之朝上頂面,具有小於0.06mm的平面度。
較佳地,該第一間隙是指該光罩的底面的外圍區域至該基座的朝上頂面的最小距離,該第二間隙是指該光罩的底面的中央區域至該基座的朝上頂面的最小距離。
較佳地,該光罩的底面的中央區域至少涵蓋該光罩的一圖案區域。
較佳地,該基座的朝上頂面具一撓曲面(deflection surface)。
較佳地,該外圍區域具有一外緣和一內緣,該外圍區域在該外緣和該內緣之間延伸,且該外緣和該內緣之間的距離小於5毫米。
100:光罩盒
1:光罩
10:基座
11:朝上頂面
12:支撐面
13:外圍區域
131:外緣
132:內緣
14:向下凹曲面
15:中央區域
20:支撐裝置
21:支撐銷
22:定位件
30:蓋體
d1:第一間隙
d2:第二間隙
參照下列圖式與說明,可更進一步理解本發明。非限制性與非窮舉性實例系參照下列圖式而描述。在圖式中的部件並非必須為實際尺寸;重點在於說明結構及原理。
第一圖係顯示本發明光罩盒之分解立體圖。
第二圖係顯示本發明光罩盒之光罩置於基座之組合立體圖。
第三圖係顯示本發明光罩盒之部分側視剖面圖。
第四圖係顯示本發明光罩盒具有基座表面撓曲的示意圖。
底下將參考圖式更完整說明本發明,並且藉由例示顯示特定範例具體實施例。不過,本主張主題可具體實施於許多不同形式,因此所涵蓋或申請主張主題的建構並不受限於本說明書所揭示的任何範例具體實施例;範例具體實施例僅為例示。同樣,本發明在於提供合理寬闊的範疇給所申請或涵蓋之主張主題。除此之外,例如主張主題可具體實施為方法、裝置或系統。因此,具體實施例可採用例如硬體、軟體、韌體或這些的任意組合(已知並非軟體)之形式。
本說明書內使用的詞彙「一實施例」並不必要參照相同具體實施例,且本說明書內使用的「其他(一些/某些)實施例」並不必要參照不同的具體實施例。其目的在於例如主張的主題包括全部或部分範例具體實施例的組合。
請參考第一圖,係顯示本發明光罩盒之分解立體圖,尤其圖中所示光罩盒屬於光罩內盒(EUV reticle inner pod)的部分,而光罩外盒的部分省略未示。本發明光罩盒100,用以容置一光罩1,該光罩盒100,包含:一基座10;以及複數個支撐裝置20,係設於該基座10上,且每一個支撐裝置20具有一支撐銷21及兩個定位件22,該等支撐銷21係供支撐該光罩1,並藉由該定位件22將該光罩1支撐和限制於基座10上。
在一實施例中,支撐裝置20的支撐高度經選擇,使該光罩1的底面與該基座10的一朝上頂面11間形成一第一間隙d1(請參考第三圖)。然而,在一機械加工的結果中,基座10的朝上頂面11會存在撓曲的現象,而導致該光罩1的底面上相對於一外圍區域13的一中央區域15與該基座10間形成大於第一間隙d1的一第二間隙d2(請參考第四圖)。所述第一間隙d1和第二間隙d2是指光罩1外圍區域13和外圍區域13所圍繞的區域(光罩的中央區域15)分別與基座10的頂面11之間存在的間隙,其分別具有一最小距離。
本發明光罩盒100還包含一蓋體30,該蓋體30係用以結合至基座10並覆蓋於該光罩1上。相接觸的基座10和蓋體30形成一容置空間用於容置光罩1。額外密封的手段可提供於光罩盒100中,以將該基座10與該蓋體30內的環境與其外部的環境流體隔絕,此阻止內外環境間的氣體流動,故可有效杜絕光罩 1受到汙染,並可保護該光罩1不受到撞擊損壞。由於本發明主要著重於光罩1與基座10之間的關係,蓋體30的其他細節不在此贅述。
請繼續參考第一圖並配合參考第二圖及第三圖,該第二圖係顯示本發明光罩盒之光罩置於基座之立體圖,而第三圖係顯示本發明光罩盒之側視示意圖。本發明光罩盒100之基座10具有一朝上頂面11(本文簡稱頂面)與至少一環繞該頂面11之支撐面12。該支撐面12為一環狀平面,用於和蓋體30的一朝下環狀表面(未顯示)接觸,並且該支撐面12與該頂面11之間形成有一溝槽,而該支撐裝置20係置於該頂面11與支撐面12之間,使這些支撐裝置20圍繞著頂面11。於本實施例中,該支撐裝置20之該支撐銷21係置於二個定位件22之間,藉由該定位件22限制該光罩1的四個角隅置放的位置,而該支撐銷21使該光罩1平穩地置於該基座10上,且使該光罩1的一底面與該基座10的頂面11間形成該第一間隙d1。更具體而言,支撐裝置20的支撐高度是經由選擇,使得靠近支撐裝置20的光罩1的一部分底面與對應基座10的頂面11之間垂直距離控制在第一間隙d1的程度。如第二圖所示,與第一間隙d1對應的光罩1區域大約是沿著光罩1邊緣環繞而形成的一外圍區域13。於本實施例中,與該外圍區域13對應之光罩1的底面與基座10的頂面11間所形成的該第一間隙d1為0.18~0.30毫米(mm)。所述外圍區域13是指從光罩1的邊緣向光罩1的中央處延伸的一區域,其大約是在支撐裝置20的附近,但外圍區域13不一定是呈矩形環。在一實施例中,而所述外圍區域13的一外緣(131)和一內緣(132)之間的距離為小於5毫米的範圍。
請繼續參考第三圖並配合參考第四圖,該第四圖係顯示本發明光罩盒之基座因機械加工而產生撓曲的示意圖。一般基座之頂面11,在視覺上,雖然是一平坦的,如第二圖所示,但實際上,於加工過程中的低頻因素會導致 基座10的頂面11產生撓曲,因此,實際上該基座10之頂面11呈現一向下凹曲面14,如第三圖所示。意即,光罩1的底面的一中央區域15與基座10的對應頂面11之間的垂直距離(即第二間隙d2)略大於光罩1的底面的周圍區域13與基座10的對應頂面11的垂直距離(即第一間隙d1)。該光罩1與該基座10的頂面11間所形成之該第二間隙d2,係由該光罩1底部的中央區域15域至該基座10的向下凹曲面14間的間隙,該第二間隙d2對應的光罩1區域是位於該外圍區域13所圍繞的範圍區域中。在一實施例中,支撐裝置20的高度經由選擇,而使得第二間隙d2保持在1.50毫米(mm)以上,較該第一間隙d1為大,俾使於機械手臂取放該光罩1於基座10時,因該光罩1與該基座10間有著第一間隙d1和第二間隙d2的配置,使光罩1與基座10撞擊或刮傷的機率降低,進而保護該光罩1。
所述第一間隙d1對應的光罩外圍區域13與所述第二間隙d2對應的光罩中央區域15不必然是有連續關係的。意即第二間隙d2所對應的光罩1中央區域15還小於外圍區域13所圍繞的整體區域。例如,所述第二間隙d2對應的光罩中央區域15為至少可涵蓋光罩上的一圖案區域。
另外,在一較佳實施例中,面對該光罩1底面的該基座10之頂面(如第三圖的朝上頂面11或第四圖的向下凹曲面14),其平面度小於0.06mm,該平面度是指工件某一表面的一真實平面與一理想平面(如完美平面)之間的偏差。關於平面度的定義,可參考台灣專利申請第110101422號的描述。當光罩1與基座10的接觸呈現出所述第一間隙d1和第二間隙d2的關係時,基座10的朝上頂面11的平面度小於0.06mm有助於使光罩1和基座10相互碰撞的機率進一步降低。
本發明之光罩盒,藉由該光罩的中央區域與該基座間所形成的第二間隙大於該光罩的外圍區域的底面與該基座間所形成的第一間隙,俾使該光罩與該基座在互動的過程中光罩被撞擊或被刮傷的機率降低,以保護該光罩,且第一間隙和第二間隙的配置使該光罩自該基座被拿起時不易引起嚴重的氣流擾動使粒子附著於光罩底面,以保護該光罩圖案區域不受到汙染。
光罩1底面與基座10的頂面11之間的垂直距離(即所述)的測量可經由已知的手段獲得。舉例而言,針對第一間隙d1的測量,可先決定光罩1的外圍區域13涵蓋範圍,接著在與外圍區域13對應的頂面11區域上決定多個測量位置,並使用已知手段得知這些測量位置與光罩1底面之間的垂直距離,在這些獲得的垂直距離中以一最小值作為光罩1外圍區域13與基座10頂面11之間的所述第一間隙d1。同樣地,針對第二間隙d2的測量,可先決定光罩1外圍區域13所圍繞的一中央區域15,例如至少是可涵蓋光罩圖案的區域,接著在與所述中央區域15對應的頂面11區域上決定多個測量位置(如35個),並使用已知手段得知這些測量位置與光罩1底面之間的垂直距離,在這些獲得的垂直距離中以一最小值作為光罩1中央區域15與基座10頂面11之間的所述第二間隙d2。
雖然為了清楚瞭解已經用某些細節來描述前述本發明,吾人將瞭解在申請專利範圍內可實施特定變更與修改。因此,以上實施例僅用於說明,並不設限,並且本發明並不受限於此處說明的細節,但是可在附加之申請專利範圍的領域及等同者下進行修改。
100:光罩盒
1:光罩
10:基座
14:向下凹曲面
21:支撐銷
d2:第二間隙

Claims (9)

  1. 一種光罩盒,用以容置一光罩,該光罩盒,包含:一基座;以及複數個支撐裝置,係設於該基座上,支撐該光罩,該光罩的一底面的一外圍區域與該基座的一朝上頂面之間形成一第一間隙,該光罩的底面的一中央區域與該基座的朝上頂面之間形成一第二間隙,其中該中央區域受該外圍區域圍繞,該第二間隙大於第一間隙。
  2. 如請求項1所述之光罩盒,其中該基座具有環繞該朝上頂面之一支撐面,該支撐面為一環狀平面。
  3. 如請求項1所述之光罩盒,其中該第一間隙為0.18至0.30mm。
  4. 如請求項1所述之光罩盒,其中該第二間隙的為1.50mm以上。
  5. 如請求項1所述之光罩盒,其中面對該光罩的該基座之朝上頂面,具有小於0.06mm的平面度。
  6. 如請求項1所述之光罩盒,其中該第一間隙是指該光罩的底面的外圍區域至該基座的朝上頂面的最小距離,該第二間隙是指該光罩的底面的中央區域至該基座的朝上頂面的最小距離。
  7. 如請求項1所述之光罩盒,其中該光罩的底面的中央區域至少涵蓋該光罩的一圖案區域。
  8. 如請求項1所述之光罩盒,其中該基座的朝上頂面具一撓曲面(deflection surface)。
  9. 如請求項1所述之光罩盒,其中該外圍區域具有一外緣和一內緣,該外圍區域在該外緣和該內緣之間延伸,且該外緣和該內緣之間的距離小於5毫米。
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