TWI727918B - 具有超細間距倒裝芯片凸點的基板 - Google Patents
具有超細間距倒裝芯片凸點的基板 Download PDFInfo
- Publication number
- TWI727918B TWI727918B TW103128714A TW103128714A TWI727918B TW I727918 B TWI727918 B TW I727918B TW 103128714 A TW103128714 A TW 103128714A TW 103128714 A TW103128714 A TW 103128714A TW I727918 B TWI727918 B TW I727918B
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- Prior art keywords
- copper
- layer
- multilayer composite
- solder
- electronic structure
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 229910000679 solder Inorganic materials 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 113
- 229910052802 copper Inorganic materials 0.000 claims description 113
- 239000010949 copper Substances 0.000 claims description 113
- 229920002120 photoresistant polymer Polymers 0.000 claims description 59
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 23
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- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 3
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 claims description 2
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- 239000011737 fluorine Substances 0.000 claims description 2
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/486—Via connections through the substrate with or without pins
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- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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Abstract
一種將芯片連接至具有外層的基板上的方法,所述外層包括嵌入在如焊料掩膜的電介質中的通孔柱,其中通孔柱的端部與所述電介質齊平,該方法包括以下步驟:(o)任選地移除有機塗層;(p)將具有端接焊料凸點的引腳的芯片定位為與通孔柱暴露端接觸;和(q)加熱並熔融焊料凸點並使焊料潤濕通孔端部。
Description
本發明涉及端接互連結構以及芯片與基板之間的連接。
在對於越來越複雜的電子元件的小型化需求越來越大的帶動下,諸如計算和電信設備等消費電子產品的集成度越來越高。這已經導致要求支撐結構如IC基板和IC插件具有通過介電材料彼此電絕緣且高密度的多個導電層和通孔。
這種支撐結構的總體要求是可靠性和適當的電氣性能、薄度、剛度、平坦度、散熱性好和有競爭力的單價。
在實現這些要求的各種途徑中,一種廣泛實施的創建層間互連通孔的製造技術是採用激光鑽孔,所鑽出的孔穿透後續布置的介電基板直到最後的金屬層,用以後續填充金屬,通常是銅,該金屬通過鍍覆技術沈積在其中。這種成孔方法有時也被稱為“鑽填(drill & fill)”,由此產生的通孔可稱為“鑽填通孔”。
鑽填通孔方法存在多個缺點。因為每個通孔需要單獨鑽孔,所以生產率受限並且製造複雜的多通孔IC基板和插件的成本變得高昂。在大型陣列中,通過鑽填方法難以生產出高密度和高品質的彼此緊密相鄰且具有不同的尺寸和形狀的通孔。此外,激光鑽出的通孔具有穿過介電材料厚度的粗糙側壁和內向錐度。該錐度減小了通孔的有效直徑。特別是在超
小通孔直徑的情況下,也可能對於在先的導電金屬層的電接觸產生不利影響,由此導致可靠性問題。此外,在被鑽的電介質是包括聚合物基質中的玻璃或陶瓷纖維的複合材料時,側壁特別粗糙,並且這種粗糙度可能會產生附加的雜散電感。
鑽出的通孔的填充過程通常是通過銅電鍍來完成的。電鍍填充鑽孔可能導致凹坑,即在通孔端部出現小坑。或者,當通孔通道被填充超過其容納量的銅時,可能造成溢出,從而產生突出超過周圍材料的半球形上表面。凹坑和溢出二者往往在如製造高密度基板和插件時所需的後續上下堆疊通孔時造成困難。此外,應該認識到,大的通孔通道難以均勻填充,特別是在其位於插件或IC基板設計的同一互連層內的較小通孔附近時。
雖然可接受的尺寸和可靠性正在隨著時間的推移而改善,但是上文所述的缺點是鑽填技術的內在缺陷,並且預計會限制可能的通孔尺寸範圍。還應該注意的是,激光鑽孔是製造圓形通孔通道的最好方法。雖然理論上可以通過激光銑削製造狹縫形狀的通孔通道,但是實際上可製造的幾何形狀範圍比較有限,並且在給定支撐結構中的通孔通常是圓柱形的並且是基本相同的。
通過鑽填工藝製造通孔是昂貴的,並且難以利用相對具有成本效益的電鍍工藝用銅來均勻和一致地填充由此形成的通孔通道。
在複合介電材料中激光鑽出的孔實際上被限制在60×10-6m的最小直徑,並且由於所涉及的燒蝕過程以及所鑽的複合材料的性質,甚至因此而遭受到顯著的錐度形狀以及粗糙側壁的不利影響。
除了上文所述的激光鑽孔的其它限制外,鑽填技術的另一限
制在於難以在同一層中產生不同直徑的通孔,這是因為當鑽出不同尺寸的通孔通道並隨後用金屬填充以製造不同尺寸通孔時,通孔通道的填充速率不同所致。因此,作為鑽填技術的特徵性的凹坑或溢出的典型問題進一步惡化,因為不可能對不同尺寸通孔同時優化沈積技術。
克服鑽填方法的多個缺點的可選解決方案是利用又稱為“圖案鍍覆(pattern plating)”的技術,通過將銅或其它金屬沈積到在光刻膠中形成的圖案內來製造通孔。
在圖案鍍覆中,首先沈積種子層。然後在其上沈積光刻膠層,隨後曝光形成圖案,並且選擇性地移除以制成暴露出種子層的溝槽。通過將銅沈積到光刻膠溝槽中來形成通孔柱。然後移除剩余的光刻膠,蝕刻掉種子層,並在其上及其周邊層壓通常為聚合物浸漬玻璃纖維氈的介電材料,以包圍所述通孔柱。然後,可以使用各種技術和工藝來平坦化所述介電材料,移除其一部分以暴露出通孔柱的端部,從而允許由此導電接地,用於在其上形成下一金屬層。可在其上通過重複該過程來沈積後續的金屬導體層和通孔柱,以形成所需的多層結構。
在一個替代性的但緊密關聯的技術即下文所稱的“面板鍍覆(panel plating)”中,將連續的金屬或合金層沈積到基板上。在基板的頂部沈積光刻膠層,並在其中顯影出圖案。剝除被顯影的光刻膠圖案,選擇性地暴露出其下的金屬,該金屬可隨後被蝕刻掉。未顯影的光刻膠保護其下方的金屬不被蝕刻掉,並留下直立的特徵結構和通孔的圖案。
在剝除掉未顯影的光刻膠後,可以在直立的銅特徵結構和/或通孔柱上和周邊層壓介電材料,如聚合物浸漬玻璃纖維氈。在平坦化後,
可通過重複該過程在其上沈積後續的金屬導體層和通孔柱,以構建所需的多層結構。
通過上述圖案鍍覆或面板鍍覆方法形成的通孔層通常被稱為銅制的“通孔柱(via post)”和特徵層。
應該認識到,微電子演化的一般推動力涉及製造更小、更薄、更輕和更大功率的具有高可靠性產品。使用厚且有芯的互連不能得到超輕薄的產品。為了在互連IC基板或“插件”中形成更高密度的結構,需要具有甚至更小連接的更多層。事實上,有時希望彼此交疊地堆疊元件。
如果在銅或其它合適的犧牲基板上沈積鍍覆層壓結構,則可以蝕刻掉基板,留下獨立的無芯層壓結構。可以在預先附著至犧牲基板上的側面上沈積其它層,由此能夠構建雙面積層,從而最大限度地減少翹曲並有助於實現平坦化。
一種製造高密度互連的靈活技術是構建包括在電介質基質中的具有多種幾何形狀和形式的金屬通孔或特徵結構在內的圖案或面板鍍覆的多層結構。金屬可以是銅,電介質可以是纖維增強聚合物,通常是具有高玻璃化轉變溫度(Tg)的聚合物,如聚酰亞胺。這些互連可以是有芯的或無芯的,並可包括用於堆疊元件的空腔。它們可具有奇數或偶數層,且所述通孔可能具有非圓形的形狀。實現技術描述在授予Amitec-Advanced Multilayer Interconnect Technologies Ltd.的現有專利中。
例如,赫爾維茨(Hurwitz)等人的題為“高級多層無芯支撐結構及其製造方法(Advanced Multilayer Coreless Support Srructures and Method for Their Fabrication)”的美國專利US 7,682,972描述了
一種製造包括在電介質中的通孔陣列的獨立膜的方法,所述膜用作構建優異的電子支撐結構的預型體,該方法包括以下步驟:在包圍犧牲載體的電介質中製造導電通孔膜,和將所述膜與犧牲載體分離以形成獨立的層壓陣列。基於該獨立膜的電子基板可通過將所述層壓陣列減薄和平坦化,隨後對通孔進行端接來形成。該公報通過引用全文並入本文。
赫爾維茨(Hurwitz)等人的題為“用於芯片封裝的無芯空腔基板及其製造方法(Coreless Cavity Substrates for Chip Packaging and Their Fabrication)”的美國專利US 7,669,320描述了一種製造IC支撐體的方法,所述IC支撐體用於支撐與第二IC芯片串聯的第一IC芯片;所述IC支撐體包括在絕緣周圍材料中的銅特徵結構和通孔的交替層的堆疊,所述第一IC芯片粘合至所述IC支撐體,所述第二IC芯片粘合在所述IC支撐體內部的空腔中,其中所述空腔是通過蝕刻掉銅基座和選擇性蝕刻掉累積的銅而形成的。該公報通過引用全文並入本文。
赫爾維茨(Hurwitz)等人的題為“集成電路支撐結構及其製造方法(Integrated Circuit Support Structures and Their Fabrication)”的美國專利US 7,635,641描述了一種製造電子基板的方法,包括以下步驟:(A)選擇第一基礎層;(B)將蝕刻阻擋層沈積到所述第一基礎層上;(C)形成交替的導電層和絕緣層的第一半堆疊體,所述導電層通過貫穿絕緣層的通孔而互連;(D)將第二基礎層施加到所述第一半堆疊體上;(E)將光刻膠保護塗層施加到第二基礎層上;(F)蝕刻掉所述第一基礎層;(G)移除所述光刻膠保護塗層;(H)移除所述第一蝕刻阻擋層;(I)構建交替的導電層和絕緣層的第二半堆疊體,導電層通過貫穿絕緣層的通孔
而互連;其中所述第二半堆疊體具有與第一半堆疊體基本對稱的構造;(J)將絕緣層施加到交替的導電層和絕緣層的所述第二半堆疊體上;(K)移除所述第二基礎層,以及,(L)通過將通孔端部暴露在所述堆疊體的外表面上並對其施加端子來對基板進行端接。該公報通過引用全文並入本文。
在美國專利US7,682,972、US7,669,32()和US7,635,641中描述的通孔柱技術使得可以同時通過電鍍大量通孔從而實現大規模生產。如前所述,現有的鑽填通孔的有效最小直徑約為60微米。與之區別的是,採用光刻膠和電鍍的通孔柱技術能夠獲得更高的通孔密度。可以實現小至30微米直徑的通孔直徑並且可以在同一層中共同製造多種幾何尺寸和形狀的通孔。
隨著時間的推移,預期鑽填技術和通孔柱沈積技術兩者都將能夠實現製造進一步微型化的並且具有更高密度的通孔和特徵結構的基板。然而,很明顯的是,通孔柱技術的發展將會持續保持競爭能力。
基板能夠使芯片與其它元件連接。芯片必須以提供可靠電連接的方式連接在基板上,從而實現芯片與基板之間的電通信。
用於將基板與芯片互連的高密度引線技術是已經確立的“倒裝芯片技術”,其中在芯片端接焊盤上生長焊料凸點、無鉛焊料凸點或在其頂端含有焊料或無鉛焊料的銅凸點,然後將芯片倒裝以將其凸點互連在基板的上表面焊盤上。由於芯片的凸點和間距變得越來越密集,所以先進基板通常配有自身凸點以輔助與芯片凸點的互連。這種在基板焊盤上的凸點也稱為“SoP(焊盤上焊料)”凸點並且通常由焊料或無鉛焊料構成。一般通過絲網印刷隨後回流焊或者通過電鍍工藝隨後回流焊將這種凸
點施加到基板的端接焊盤上。這種凸點一般利用熱和壓力“模制”以生成頂部平坦表面,從而能夠有助於安放來自芯片側的凸點。
當芯片凸點與SoP凸點通過回流焊進行接觸時,SoP凸點的焊料材料有助於生成與芯片凸點的可靠的機械和電接觸。如果沒有SoP,則芯片凸點的焊料材料可能不足或者可能不能完全流動並潤濕基板端接焊盤的整個表面,由此導致可靠性危險,抑或導致芯片與基板斷開。這確實是一個合理的關注點,因為大部分基板都具有天然延展在端接基板焊盤上的掩膜外防護層,由此使得這些焊盤在沒有SoP凸點的情況下難以進入。
應該認識到,芯片凸點的尺寸和間距必須與SoP凸點的尺寸和間距盡可能地對齊。隨著芯片技術目前的發展,芯片變得越來越密集,因此正如越來越高的接觸密度所要求的那樣,連接凸點將不得不變得越來越小並且排列地越來越密集。因此,在基板上施加SoP凸點變得越來越具有挑戰性。在本質上,施加SoP是一個良品率低於先前基板製造步驟的工藝,並且是基板製造中的最終工藝步驟之一,由此增加了廢品率、返工率、測試率和成本。此外,下一代的SoP凸點的間距會更細,所以相鄰凸點之間在回流焊後以及在芯片裝配期間短路故障的可能性就越大,由此進一步降低了良品率並增加了總體封裝成本。
由於通孔柱尺寸縮減,使得保持單個導線彼此電絕緣以防止短路變得越加困難。焊接也變得棘手,因為焊料過少可能會導致某些連接斷路。然而,焊料過多則存在相鄰連接之間短路的風險。
焊料凸點的電鍍是已知的。例如,參見授予Yung的美國專利US 5,162,257和US 5,293,006以及授予Rinne的美國專利US 6,117,299。
隨著對於微型化程度逐漸提高以及複雜程度增加的現有推動力所導致的焊料凸點的密度增加和尺寸縮減,在回流焊期間焊料熔融時防止短路變得越來越困難。
製造基板上焊料凸點的具體問題在於將凸點與下方的銅通孔准確對准,這是提供良好的電和機械連接所要求的。
本發明的實施方案解決了這些問題。
需要在多層電子支撐結構上提供與多層電子支撐結構的銅通孔對准的SoP凸點。
本發明的第一方面涉及提供一種多層複合電子結構,包括在X-Y平面內延伸的特徵層,每個相鄰成對的特徵層被內通孔層分隔開,所述通孔層包括在垂直於X-Y平面的Z方向上連接相鄰特徵層的通孔柱,所述通孔柱嵌入在內層電介質中,所述多層複合結構還包括至少一個外端子層,所述至少一個外端子層包括至少一個微凸點,其中所述至少一個微凸點包括頂端覆蓋有可焊材料的通孔柱。
通常,所述至少一個外端子層包括微凸點二維陣列。
任選地,所述微凸點的厚度在15微米到50微米之間。
任選地,所述可焊材料選自包括鉛、錫、鉛錫合金、錫銀合金、錫銀銅合金、錫銅合金和錫銅鎳合金的組別。
通常,所述可焊材料是錫基的。
優選地,所述可焊材料是無鉛的。
優選地,所述至少一個微凸點的直徑在與芯片凸點兼容的範
圍內。
通常,所述至少一個微凸點的直徑在60至110微米的範圍內。
任選地,所述至少一個微凸點的最小直徑為25微米。
任選地,相鄰的微凸點的最小間隔為15微米。
任選地,所述微凸點的間距為40微米。
任選地,所述外電介質具有小於100nm的平滑度。
任選地,所述外電介質具有小於50nm的平滑度。
任選地,所述外電介質選自包括NX04H(Sekisui)、HBI-800TR67680(Taiyo)和GX-13(Afinomoto)的組別。
本發明的第二方面涉及一種對多層複合結構具有嵌入在電介質中的銅通孔柱的外層的一面進行端接的方法,包括以下步驟:(i)減薄所述外層以暴露出銅通孔柱;(ii)在被減薄的表面上濺射銅種子層;(iii)施加、曝光和顯影出第一光刻膠圖案;(iv)在該圖案中電鍍外特徵層;(v)剝除所述第一光刻膠圖案;(vi)施加、曝光和顯影出與微凸點所需圖案對應的第二光刻膠圖案;(vii)在所述第二光刻膠圖案中圖案鍍覆銅通孔柱;(viii)在所述銅通孔柱上圖案鍍覆可焊金屬;(ix)剝除所述最終光刻膠圖案;(x)蝕刻掉所述銅種子層;
(xi)層壓外電介質層;(xiv)等離子體蝕刻所述外電介質層以暴露出所述通孔柱的焊帽;和(xv)對所述銅通孔柱的焊帽進行表面處理。
任選地,所述外電介質層選自包括膜電介質和乾膜焊料掩膜的組別。
任選地,對所述銅通孔柱的焊帽進行表面處理的步驟(xv)包括通過沿銅通孔柱軸對焊帽施加壓力進行模壓從而形成平坦模制焊帽。
任選地,對所述銅通孔柱的焊帽進行表面處理的步驟(xv)包括通過沿銅通孔柱軸施加壓力並同時加熱以在壓力下產生回流而進行模壓,從而形成平坦模制焊帽。
任選地,對所述銅通孔柱的焊帽進行表面處理的步驟(xv)包括在不加壓的情況下加熱以產生回流,使得焊帽由於表面壓力而形成圓頂形。
任選地,該方法還包括步驟(xii)一平坦化所述外電介質層。
任選地,所述平坦化包括化學機械抛光。
任選地,所述等離子體蝕刻的步驟包括在低壓氣氛下暴露於離子轟擊,所述氣氛包括電離至少一種選自包括氧、四氟化碳和氟的組別的氣體。
任選地,該方法還包括在基板的另一面上施加端子。
在一個實施方案中,施加端子包括:(a)減薄所述另一面以暴露出銅通孔柱的端部;
(b)濺射銅種子層;(c)施加、曝光並顯影光刻膠層;(d)在光刻膠中電鍍銅焊盤;(e)移除所述光刻膠層;和(f)在基板上的銅焊盤之間及其上方沈積焊料掩膜。
第三方面涉及一種將可焊凸點施加至通孔柱端部的方法,包括在圖案化的光刻膠中電鍍通孔柱;在通孔柱上鍍覆焊料;移除光刻膠以暴露出通孔柱和可焊材料;施加電介質層;和等離子體蝕刻所述電介質層以留下直立的焊帽。
通常,該方法還包括對焊帽進行表面處理。
任選地,所述致密化包括以下至少其一:(i)沿通孔柱軸施加壓力以模壓焊帽和(ii)加熱以使焊帽回流。
100:多層複合電子結構、基板
102、104、106:功能層或特徵層
108:隔離的組件或特徵結構
110、112、114、116:介電層
118:通孔、銅通孔
120:銅種子層、種子層
122:光刻膠層、光刻膠
124:銅焊盤
126:第二光刻膠層、光刻膠
128:銅通孔柱
130:金屬或合金、焊料凸點、焊帽
132:膜電介質/乾膜焊料掩膜
134:銅種子層、種子層
136:光刻膠
138:銅焊盤、銅層
140:焊料掩膜
300:示意性示出內嵌等離子體蝕刻站、示意性示出的設備
302:真空室
304:載臺
306:支撐基板、基板
308:上電極
310:光譜分析儀
312:入口
314:等離子體區
402:銅焊盤
404:電介質
405:銅通孔柱、銅、銅通孔
406:銅通孔柱
407:錫層、錫帽
409:比例尺
410:錫層、錫帽
411:比例尺
420:焊帽
425:焊帽
426:銅通孔
圖1是圖示在多層複合電子結構上製造極微細間距的球柵陣列端子以利用倒裝芯片技術將其與IC連接的工藝步驟的流程圖;圖1(i)是多層複合電子結構的示意圖;圖1(ii)是圖1(i)的多層複合電子結構的第一面被減薄以暴露出嵌入柱端部的示意圖;圖1(iii)是圖1(ii)的多層複合電子結構的被減薄表面上濺射銅種子層的示意圖;圖1(iv)是圖1(iii)的多層複合電子結構在施加、曝光並顯影出光刻膠
以提供焊盤圖案後的示意圖;圖1(v)是圖1(iv)的多層複合電子結構在光刻膠層中鍍銅後的示意圖;圖1(vi)是在剝除光刻膠後具有直立銅焊盤的多層複合電子結構的示意圖;圖1(vii)是在施加、曝光並顯影出光刻膠以提供端子引腳圖案後的多層複合電子結構的示意圖;圖1(viii)是在圖案化的光刻膠中鍍銅後的多層複合電子結構的示意圖;圖1(ix)是在圖案化的光刻膠中的銅上鍍覆可焊金屬或合金後的多層複合電子結構的示意圖;圖1(x)是在剝除光刻膠後具有直立的銅和焊料凸點陣列的多層複合電子結構的示意圖;圖1(xi)是在蝕刻掉銅種子層後具有直立的銅和焊料凸點陣列的多層複合電子結構的示意圖;圖1(xii)是在焊料凸點陣列上層壓有膜電介質或乾膜焊料掩膜的多層複合電子結構的示意圖;圖1(xiii)是在通常利用化學機械抛光(CMP)對在焊料凸點陣列上層壓的膜電介質或乾膜焊料掩膜進行平坦化的任選步驟後的多層複合電子結構的示意圖;圖(xiv)a示出被研磨暴露出銅通孔端部的多層複合電子結構的另一面;圖(xiv)b示出其上濺射有銅種子層的多層複合電子結構的另一面;
圖(xiv)c示出具有經施加、曝光和顯影後的光刻膠圖案的多層複合電子結構的另一面;圖(xiv)d示出具有電鍍在光刻膠圖案中的銅層的多層複合電子結構的另一面;圖(xiv)e示出剝除光刻膠後的多層複合電子結構的另一面;圖(xiv)f示出蝕刻掉種子層後的多層複合電子結構的另一面;圖(xiv)g示出沈積圖案化的焊料掩膜後的多層複合電子結構的另一面;圖(xv)示出在對電介質膜進行減薄以暴露出在銅通孔柱上的焊帽後的第一面;圖(xvi)a示出在壓力下進行致密化處理後的第一面;圖(xvi)b示出通過回流焊進行致密化處理後的第一面;圖2是圖示對具有球柵陣列的基板另一面進行端接的工藝流程圖;圖3是內嵌等離子體蝕刻站的示意圖;圖4a是掃描電子顯微照片(SEM顯微照片),從上方拍攝,即角度為0°示出在基板表面上間隔有電介質的銅焊盤,還示出基板上直立的銅通孔柱;圖4b是掃描電子顯微照片,從上方且成45°角示出在基板表面上間隔有電介質的銅焊盤以及基板上直立的銅通孔柱,以例如比例尺為100微米的放大倍數;圖4c是掃描電子顯微照片,從上方且成45°角示出在基板表面上間隔有電介質的銅焊盤以及基板上具有直立的銅通孔柱,以例如比例尺為20微米的放大倍數,並且銅通孔柱和其上電鍍的錫層均清晰可見;
圖4d是掃描電子顯微照片,其為圖4c的傾斜放大,示出回流焊後為圓頂的錫層410;圖4e是極高放大倍數的掃描電子顯微照片,其中比例尺為10微米,示出具有電鍍在其上的錫帽407的直立銅通孔405,其中使用相同的圖案化光刻膠以實現最佳的對准;圖4f是極高放大倍數的掃描電子顯微照片,其中比例尺為10微米,示出如圖4e所示的具有電鍍在其上的錫帽407的直立銅通孔405,但在接受回流之後;圖4g是中等放大倍數的掃描電子顯微照片,示出在通孔柱的軸向上受壓的焊帽;圖4h是較高放大倍數的掃描電子顯微照片,示出在通孔柱的軸向上受壓的焊帽;圖4i是中等放大倍數的掃描電子顯微照片,示出在通孔柱的軸向上受壓的焊帽;圖4j是較高放大倍數的掃描電子顯微照片,示出在通孔柱的軸向上受壓的焊帽,其插入壓機中並被加熱以產生回流;在各個附圖中相同的附圖標記和標識表示相同的要素。
為了更好地理解本發明並示出本發明的實施方式,純粹以舉例的方式作出參考,參照附圖。
具體參照附圖時,必須強調的是特定的圖示是示例性的並且目的僅在於說明性地討論本發明的優選實施方案,並且基於提供被認為是
對於本發明的原理和概念方面的描述最有用和最易於理解的圖示的原因而被呈現。就此而言,沒有試圖將本發明的結構細節以超出對本發明基本理解所必需的詳細程度來圖示;參照附圖的說明使本領域技術人員明顯認識到本發明的幾種形式可如何實際體現出來。
在以下說明中,涉及的是由在電介質基體中的金屬通孔構成的支撐結構,特別是在聚合物基體中的銅通孔柱,如玻璃纖維增強的聚酰亞胺、環氧樹脂或BT(雙馬來酰亞胺/三嗪)或它們的混合物。
可以製造包括具有大量通孔柱的極大陣列基板的大面板是珠海越亞公司(ACCESS)的光刻膠和圖案或面板鍍覆和層壓技術的特徵,如在赫爾維茨(Hurwitz)等人的美國專利US 7,682,972、US 7,669,320和US 7,635,641中所描述的,其通過引用並入本文。這樣的面板是基本平坦和基本光滑的。
利用光刻膠電鍍製造通孔並且該通孔窄於通過鑽填技術形成的通孔是珠海越亞公司(ACCESS)技術的另一特徵。目前,最窄的鑽填通孔為約60微米。通過利用光刻膠進行電鍍,可以獲得低於50微米,甚至小到30微米的分辨率。將IC連接至這樣的基板是非常具有挑戰性的。一種倒裝芯片連接方式是提供焊盤上焊料(SoP)端子,其中焊料凸點被施加至支撐結構上以端接銅通孔。由於微細的間距以及小尺度導致難以實現。
本發明的實施方案解決了這一問題,採取的手段是在支撐結構的銅通孔端部處提供焊料凸點。
一個實施方案包括具有錫端的銅柱。
參照圖1以及圖1(i)~1(xiv),描述一種利用倒裝芯片技術在
多層複合電子結構上製造極細間距球柵陣列端子(ball grid array terminations)用於在其上連接IC的方法。
首先,得到現有技術的多層複合支撐結構一步驟1(i)。如圖1(i)所示,多層支撐結構100包括被絕緣各層的介電層110、112、114、116隔離的組件或特徵結構108的功能層102、104、106。穿過介電層的通孔118提供在相鄰的功能或特徵層102、104、106之間的電連接。因此,特微層102、104、106包括在X-Y平面內通常布置在所述層內的特徵結構108,以及跨介電層110、112、114、116導通電流的通孔118。通孔118通常設計為具有最小的電感並得到充分的隔離以在其間具有最小的電容。
可通過鑽填技術製造通孔,然而為了在製造過程中提供更大的靈活性、更高的精度和更高效的加工過程,實現同時製造大量通孔,優選利用赫爾維茨(Hurwitz)等人的美國專利US 7,682,972、US 7,669,320和US 7,635,641中所描述的技術通過電鍍製造通孔。通孔柱技術實現了不同直徑的通孔、非圓形通孔、法拉第籠、嵌入式無源組件及其他特徵結構。應該認識到,圖1(i)只是用於說明目的的示意圖。真實基板可具有更多或更少的特徵層以及更多或更少的通孔。通常,基板100包含巨大數目的通孔。通孔、特徵層和電介質以及在後續附圖中其它元件的相對尺寸只是示意性繪制而非按比例繪制的。
首先將多層複合電子結構100的芯片通過倒裝芯片接合所要連接到的一面進行減薄一步驟(ii),以暴露出銅通孔118的端部,參見圖1(ii)。可以採用化學、機械或優選的化學機械抛光(CMP)。接著,在減薄後的表面上濺射銅種子層120一步驟(iii)。所得結構示意性圖示在圖
1(iii)中。
參照圖1(iv),施加光刻膠層122,將其曝光並顯影以提供焊盤圖案一步驟(iv)。如圖1(v)所示,隨後在光刻膠中鍍覆銅焊盤124一步驟(v),銅種子層120用作陽極。
接著,在圖1(vi)中,剝除光刻膠122一步驟(vi),暴露出直立的銅焊盤124和其間的種子層120。
參照圖1(vii),施加第二光刻膠層126,曝光並顯影以提供端子引腳圖案一步驟(vii)。
接著,在圖案化的光刻膠126中鍍覆銅一步驟(viii)以提供如圖1(viii)所示意性示出的結構。
在圖案化光刻膠126中的銅通孔柱128上電鍍可焊金屬或合金130,通常是錫(Sn)一步驟(ix),提供如圖1(ix)所示意性示出的結構。
存在多種可進行電鍍的可焊金屬。其中最常用的是熔點183℃的錫-鉛共熔混合物Sn63Pb37。其它可焊金屬包括純鉛。然而,由於限制使用鉛的趨勢,開發了多種無鉛焊料,包括純錫、熔點221℃的錫銀Sn96.5Ag3.5以及各種錫銀銅合金,例如熔點218-219℃的Sn96.5Ag3.0Cu0.5、熔點217-219℃的Sn95.8Ag3.5Cu0.7、熔點217-219℃的Sn95.5Ag3.8Cu0.7、熔點217℃的Sn95.2Ag3.8Cu1和熔點217-219℃的Sn95.5Ag4Cu0.5.還有一些無銀組合物,例如熔點227℃的Sn99.3Cu0.7和熔點227℃的Sn99.3Cu0.7+Ni。所有這些都能很好地電鍍在光刻膠中的短銅通孔柱上。另一候選的材料是純錫。陶氏(DOW)化學提供一種磺酸基鍍錫溶液Solderon ECT Matte Tin,發現該溶液表現良好。
應該認識到,將焊料凸點與鑽填孔對准是極其困難的並且越來越困難,因為通孔直徑日益減小並且單位面積的通孔數日益增加。這降低了良品率和可靠性。在本文所描述的方法中,使用相同的圖案來電鍍通孔柱以及其上的焊料凸點。這種製造技術完全克服了這些問題,確保了焊料凸點與下方銅通孔柱之間的良好對准。
現在,剝除光刻膠126一步驟(x),提供如圖1(x)所示的結構,該圖示出具有直立的銅和焊料凸點的陣列的多層複合電子結構。
現在,蝕刻掉銅種子層120一步驟(xi),提供如圖1(xi)所示的結構。
在焊料凸點130的陣列上層壓膜電介質或乾膜焊料掩膜132一步驟(xii)。圖1(xii)示出具有層壓在焊料凸點130的陣列上的膜電介質或乾膜焊料掩膜132的多層複合電子結構100的示意圖。
雖未示出,但應該認識到,在下方銅通孔柱128上的焊帽130彼此隔離的同時進行回流是防止焊料流動引發相鄰凸點短路的一種方法。
通常,膜電介質/乾膜焊料掩膜132的表面非常凹凸不平,因此任選地,將膜電介質/乾膜焊料掩膜132進行平坦化一步驟(xiii),參見圖1(xiii),通常採用化學機械抛光(CMP)。
在該階段,便於將基板100的另一面與球柵陣列端接。這樣做的工藝示於圖2,並且在圖1(xiv)a~圖1(xiv)g中示出各種結構。
因此,參照圖1(xiv)a~圖1(xiv)g以及圖2,為了在多層複合電子結構100的另一面上端接,將該另一面進行研磨一步驟a,以暴露出銅通孔116的端部,如圖1(xiv)a示意性所示。然後在研磨後的表面上濺射銅一
步驟b以形成銅種子層134,如圖1(xiv)b示意性所示。參照圖1(xiv)c,接著施加光刻膠136,曝光並顯影一步驟c。如圖1(xiv)d所示,現在在光刻膠136的圖案中電鍍銅層138一步驟d。現在,剝除光刻膠136一步驟e,提供如圖1(xiv)e所示的結構。現在蝕刻掉種子層134一步驟f,提供如圖1(xiv)f所示的結構,然後在銅焊盤138周圍及其上方施加圖案化的焊料掩膜140一步驟g,形成如圖1(xiv)g所示的結構。
然後可以在銅焊盤138上施加焊料球以形成最終封裝體的球柵陣列(BGA)互連(在芯片裝配之後)。
參照圖3,示意性示出內嵌等離子體蝕刻站300。該蝕刻站包括真空室302以及在真空室302中支撐基板306的載臺304。用於等離子體蝕刻工藝的電離氣體,例如氧氣、四氟化碳(CF4)和氬氣,可通過人口312引入真空室302。通過在基板306與上電極308之間保持電勢差,形成等離子體區314。當Sn暴露時,光學發射光譜分析儀310檢測到終點,並且實時覆蓋銅,允許進行精確計算機控制。
通過利用圖3所示意性示出的設備300進行的離子輔助等離子體蝕刻過程,可以移除電介質膜132以暴露出焊帽130,通常是錫或錫合金一步驟(xv),參見圖1(xv)。
在電鍍之後,如果芯片裝配期間不使用正確熔劑材料,可焊合金可能具有高表面粗糙度,這可能導致在芯片裝配過程中在基板凸點與芯片凸點之間產生空隙。因此,經常需要進行表面處理例如將基板上的電鍍凸點的上表面“平滑化”或“模壓”,以進一步便利化和輔助倒裝芯片裝配工藝一步驟(xvi)a。可以採用不同的表面處理技術。
例如,參照圖1(xvi)a,例如通過在壓機中沿通孔柱軸向施加壓力可以模壓焊帽。為了輔助該工藝,也可以加熱,以使基板凸點回流。具有精細光滑表面130a的平坦焊帽陣列有助於倒裝芯片凸點陣列的連接以及防止在芯片與基板凸點的界面處產生空隙。
或者,對於不含凸點的低I/O計數芯片的連接有用的是,可使基板上的焊帽充分加熱產生回流,在缺少壓迫力產生模壓的情況下,導致可焊材料熔融並由於焊料液面表面張力而形成圓頂形帽130b一圖1(xvi)b。在這種情況下,基板上的非模壓凸點可以直接連接無凸點芯片一直接連接在其平坦焊盤上,可以不包含Ni/Au或其它最終金屬的表面處理劑。
應該認識到,無論有沒有回流,壓迫確保焊帽130彼此隔離,這有助於防止焊料流動導致相鄰凸點短路。
參照圖4a,其為掃描電子顯微照片(SEM顯微照片),從上方,即成0°角示出基板表面上間隔有電介質404的銅焊盤402並示出其上的直立銅通孔柱406。比例尺為100微米,並且示出通孔柱的直徑為約50微米。
參照圖4b,其為掃描電子顯微照片,從上方且成45°角示出基板表面上間隔有電介質的銅焊盤以及其上的直立銅通孔柱。以例如比例尺為100微米的放大倍數。
參照圖4c,其示出為掃描電子顯微照片,從上方且成45°角示出基板表面上間隔有電介質404的銅焊盤402以及其上的直立銅通孔柱。以例如比例尺409為20微米的放大倍數,銅通孔柱405以及其上電鍍的錫層407均清晰可見,更致密的錫407比銅405更輕。
參照圖4d,其為掃描電子顯微照片,具有圖4c的放大倍數和傾斜度,示出回流後圓頂狀的錫層410。這是通過步驟xvi的變化方案b的工藝得到的最終類型。
參照圖4e,其為極高放大倍數的掃描電子顯微照片,其中比例尺411顯示為10微米。其示出其上電鍍有錫帽407的直立銅通孔405,其中使用相同的圖案化光刻膠以實現最佳對准。
在圖4f中,示出圖4e的極高放大倍數的掃描電子顯微照片,其中比例尺顯示為10微米。在此,錫帽410已被加熱,並且由於回流而形成圓頂形狀410。這是通過步驟xvi的變化方案b的工藝得到的最終類型。
參照圖4g,示出電子顯微照片,其中一對焊帽420受到壓迫力但沒有回流。在圖4h中,示出受到壓迫力但沒有回流的單個焊帽。施加壓力會壓縮焊帽並限定焊帽,從而提供可以連接倒裝芯片IC凸點的表面。
參照圖4i和圖4j,示出具有壓縮回流焊帽425的銅通孔426,焊帽425同時受壓和回流。通過施加壓力和加熱,得到平坦致密的焊帽,該焊帽致密並且與銅通孔附著良好。
理想情況下,基板凸點與芯片上的焊料凸點具有相同直徑。通常為60微米至110微米。上文描述的技術允許凸點直徑小至35微米。這些凸點可以由約20微米的空隙分隔開,從而提供55微米的間距。實際上,由15微米空隙間隔開的15微米直徑的微凸點也是可以的。
已經發現大量市售聚合物電介質膜適合層壓外層的極高間距基板陣列。這些聚合物電介質膜包括Sekisui的NX04H、Taiyo的HBI-800TR67680和Ajinomoto的GX-13。
以上說明僅為解釋而提供。應當認識到本發明能夠具有許多變化方案。
已經描述了本發明的一些實施方案。然而,應該理解的是,可以在不偏離本發明的精神和範圍的情況下進行各種修改。相應地,其它實施方案落在所附請求項書的範圍之內。
因此,本領域技術人員應該認識到本發明不限於上文中具體示出和描述的實施方案。更確切地說,本發明的範圍由所附請求項書限定並包括本領域技術人員在閱讀前文說明後所能想到的上文所述各種技術特徵的組合及子組合以及其變化和修改。
在請求項書中,術語“包括”及其變化形式例如“包含”、“含有”等是指包括所列舉的組件,但通常並不排除其他組件。
100:多層複合電子結構、基板
130:金屬或合金、焊料凸點、焊帽
132:膜電介質/乾膜焊料掩膜
138:銅焊盤
140:焊料掩膜
Claims (21)
- 一種多層複合電子結構,其包括在X-Y平面中延伸的特徵層,每對相鄰的特徵層被內通孔層分隔開,所述內通孔層包括在垂直於X-Y平面的Z方向上連接相鄰特徵層的第一通孔柱,所述第一通孔柱嵌入在內層電介質中,所述多層複合結構還包括至少一個端子外層,所述至少一個端子外層包括至少一個微凸點,其中所述微凸點包括頂端直接覆蓋有焊料的第二通孔柱,所述焊料完全覆蓋所述第二通孔柱的頂端表面,在所述焊料和第二通孔柱之間不存在中間焊盤層,使得所述焊料不延伸超出所述微凸點的頂端表面,並且不覆蓋所述微凸點的側壁,其中所述微凸點具有光滑表面。
- 如請求項1所述的多層複合電子結構,其中所述微凸點的厚度在15微米至50微米之間。
- 如請求項1所述的多層複合電子結構,其中所述焊料選自包括鉛、錫、鉛錫合金、錫銀合金、錫銀銅合金、錫銅合金和錫銅鎳合金的組別。
- 如請求項1所述的多層複合電子結構,其中所述焊料是錫基的。
- 如請求項1所述的多層複合電子結構,其中所述焊料是無鉛的。
- 如請求項1所述的多層複合電子結構,其中所述微凸點的直徑與晶片微凸點的直徑相同。
- 如請求項1所述的多層複合電子結構,其中所述微凸點的直徑在60至110微米的範圍內。
- 如請求項1所述的多層複合電子結構,其中所述微凸點的直徑最小為25微米。
- 如請求項1所述的多層複合電子結構,其中所述微凸點的最小間隔為15微米。
- 如請求項1所述的多層複合電子結構,其中所述微凸點的間距為40微米。
- 如請求項1所述的多層複合電子結構,其中所述至少一個端子層嵌入在外電介質內,並且所述外電介質具有小於100nm的光滑度。
- 如請求項1所述的多層複合電子結構,其中所述至少一個端子層嵌入在外電介質內,並且所述外電介質具有小於50nm的光滑度。
- 如請求項1所述的多層複合電子結構,其中所述至少一個端子層嵌入在外電介質內,並且所述外電介質選自包括Sekisui公司的NX04H、Taiyo公司的HBI-800TR67680和Afinomoto公司的GX-13的組別。
- 如請求項1所述的多層複合結構,其中在嵌入有第一銅通孔柱的電介質層中的一面上形成所述端子外層的方法包括以下步驟:(i)減薄所述內電介質層以暴露出第一銅通孔柱;(ii)在被減薄的表面上濺射銅種子層;(iii)施加、曝光和顯影出第一光刻膠圖案;(iv)在所述第一光刻膠圖案中電鍍外特徵層;(v)剝除所述第一光刻膠圖案;(vi)施加、曝光和顯影出與微凸點所需圖案對應的第二光刻膠圖案;(vii)在所述第二光刻膠圖案中圖案鍍覆第二銅通孔柱;(viii)在所述第二銅通孔柱上圖案鍍覆焊帽;(ix)剝除所述第二光刻膠圖案;(x)蝕刻掉部分所述銅種子層;(xi)層壓外電介質層;(xiv)等離子體蝕刻所述外電介質層以暴露出所述第二銅通孔柱的焊帽;和(xv)對所述焊帽進行表面處理。
- 如請求項14所述的多層複合電子結構,其中所述電介質外層選自包括膜電介質和乾膜焊料掩膜的組別。
- 如請求項14所述的多層複合電子結構,其中步驟(xv)包括通過沿銅通孔柱軸對焊帽施加壓力從而形成平坦模制焊帽。
- 如請求項14所述的多層複合電子結構,其中步驟(xv)包括通過沿銅通孔柱軸施加壓力並同時加熱以在壓力下產生回流,從而形成平坦模制焊帽。
- 如請求項14所述的多層複合電子結構,其中步驟(xv)包括在不加壓的情況下加熱以產生回流,使得焊帽由於表面張力而形成圓頂形。
- 如請求項14所述的多層複合電子結構,其中等離子體蝕刻步驟(xiv)包括在低壓氣氛下暴露於離子轟擊,所述氣氛包括電離至少一種選自包括氧、四氟化碳和氟的組別的氣體。
- 如請求項14所述的多層複合電子結構,其中所述方法還包括步驟(xiii)在基板的另一面施加端子。
- 如請求項20所述的多層複合電子結構,其中所述施加端子包括:(a)減薄所述另一面以暴露出第一銅通孔柱端部; (b)濺射銅種子層;(c)施加、曝光並顯影光刻膠層;(d)在所述光刻膠中電鍍銅焊盤;(e)移除所述光刻膠層;和(f)在基板上的銅焊盤之間及其上方沈積焊料掩膜。
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TW201528461A (zh) | 2015-07-16 |
KR101659379B1 (ko) | 2016-09-23 |
KR101832717B1 (ko) | 2018-02-28 |
US20150195912A1 (en) | 2015-07-09 |
US10779417B2 (en) | 2020-09-15 |
JP6489460B2 (ja) | 2019-03-27 |
CN104134643A (zh) | 2014-11-05 |
CN104134643B (zh) | 2018-11-16 |
US20170374747A1 (en) | 2017-12-28 |
KR20150083008A (ko) | 2015-07-16 |
JP2015130467A (ja) | 2015-07-16 |
KR20160054449A (ko) | 2016-05-16 |
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