CN111293046B - 一种芯片与tsv硅基板的倒扣焊接方法 - Google Patents

一种芯片与tsv硅基板的倒扣焊接方法 Download PDF

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CN111293046B
CN111293046B CN202010105222.5A CN202010105222A CN111293046B CN 111293046 B CN111293046 B CN 111293046B CN 202010105222 A CN202010105222 A CN 202010105222A CN 111293046 B CN111293046 B CN 111293046B
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chip
welding
solder
flip
silicon substrate
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CN111293046A (zh
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薛亚慧
杨宇军
郑毅
皇甫蓬勃
米星宇
李宝霞
李梦琳
刘金梅
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Zhuhai Tiancheng Advanced Semiconductor Technology Co.,Ltd.
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Xian Microelectronics Technology Institute
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Abstract

本发明公开了一种芯片与TSV硅基板的倒扣焊接方法，属于电子封装领域。本发明的芯片与TSV硅基板的倒扣焊接方法，在TSV基板上制备焊料凸台，通过熔化焊料凸台实现与芯片焊料凸点的倒扣焊，在TSV硅基板正面制备的焊料凸台在加热熔化后，与芯片焊料凸点形成金属化合金，两者之间的结合力大；本发明的焊接方法，解决了焊接时焊接温度高于TSV硅基板上PI层的耐受温度造成的材料变质的问题。

Description

一种芯片与TSV硅基板的倒扣焊接方法
技术领域
本发明属于电子封装领域，尤其是一种芯片与TSV硅基板的倒扣焊接方法。
背景技术
在芯片技术向高密度、小型化和高性能发展的今天，2.5D-TSV封装结构是实现高密度集成的有效解决方案，采用封装的方法提高集成度的需求越来越旺盛，在此情况下，硅通孔技术(Through Silicon Via,TSV)成为了高密度集成的关键技术之一。TSV硅基板可在TSV硅基板的正反两面制作更小线宽的多层互连线，并通过硅上通孔技术实现多个芯片与封装外壳之间的垂直互连，使互连长度减小，电性能提高。
将焊芯片与TSV硅基板焊接互连形成倒扣焊组件，将组件通过BGA焊接方式与封装管壳互连并引出。芯片与TSV硅基板之间的焊料凸台为倒扣组件提供主要的互连结构，实现芯片键合焊盘与基板键合焊盘之间的电气和机械连接，形成倒扣焊组件。大规模的焊芯片上通过电镀或者微球植球方法在有源面制备焊料凸台，与TSV硅基板正面对应的焊盘通过一个单步的高速工艺(如回流焊)完成互连。对倒扣焊组件进行清洗及底部填充后，在TSV硅基板的背面进行BGA 植球，将倒扣焊组件通过BGA(Ball grid array)焊球与封装外壳进行焊接互连，将多个不同芯片采用该方法进行并排堆叠形成2.5D-TSV系统级封装结构的SiP模块。
在SiP模块封装过程中，大规模的焊芯片(如FPGA、DSP等)通常为按需采购划片后的裸芯片，芯片焊料凸点已在制造厂家完成了制造，SiP模块封装厂将多个焊芯片通过TSV硅基板提供精细的互联与封装载体之间最终形成完整的封装结构，芯片与TSV硅基板之间的焊接温度通常取决于倒扣芯片上制备的焊料凸台的材料熔点，芯片上制备的焊料凸台为高含铅量Pb-Sn(3％～5％Sn和 97％～95％Pb)时，焊接温度要求超过320℃，而TSV硅基板由于其常用的PI层耐受温度不超过270℃，使基板上的PI(Polyimide)层发生起泡、裂纹，最终使组件无法正常使用。导致芯片无法直接使用其焊料凸台与TSV硅基板进行焊接互连，因此在实际应用中经常由于芯片上制备的焊料凸台的熔点高于TSV硅基板制造中使用的有机绝缘层的耐受温度，无法直接利用芯片焊料凸点与TSV进行焊接，导致2.5D-TSV系统级SiP模块的封装无法有效开展。
发明内容
本发明的目的在于解决因焊接温度高于TSV硅基板上PI层的耐受温度造成的材料变质开裂的问题，提供一种芯片与TSV硅基板的倒扣焊接方法。
为达到上述目的，本发明采用以下技术方案予以实现：
一种芯片与TSV硅基板的倒扣焊接方法，包括以下步骤：
1)在TSV硅基板正面制备若干焊料凸台，所述焊料凸台的位置与焊芯片上的凸点焊接材料对应设置；
2)对焊芯片和TSV硅基板进行对位，对位完成后进行焊接，焊接完成后形成倒扣焊组件。
进一步的，步骤1)中的焊料凸台的熔点为183-220℃。
进一步的，步骤2)中进行焊接时，焊接温度大于等于焊料凸台的熔点，小于270℃。
进一步的，步骤1)中的焊料凸台的材料为Sn96.5Ag3.5、Sn63Pb37、SnAg 或Cu/Ni/SnAg。
进一步的，步骤1)中的焊料凸台为圆柱形或球形。
进一步的，当焊料凸台为圆柱形时，利用回流方式进行倒扣焊接。
进一步的，当焊料凸台为球形时，利用热压方式进行倒扣焊接。
进一步的，还包括对所述倒扣焊组件的后处理，所述后处理包括：
对倒扣焊组件进行真空汽相清洗，并进行底部填充；
在倒扣焊组件的背面进行BGA植球；
将倒扣焊组件通过BGA焊球焊接至陶瓷管壳内，实现芯片与外壳的互连。
进一步的，所述BGA焊球的材料为Sn63Pb37。
进一步的，焊接温度为220℃。
与现有技术相比，本发明具有以下有益效果：
本发明的芯片与TSV硅基板的倒扣焊接方法，在TSV基板上制备焊料凸台，通过熔化焊料凸台实现与芯片焊料凸点的倒扣焊，在TSV硅基板正面制备的焊料凸台在加热熔化后，与芯片焊料凸点形成金属化合金，两者之间的结合力大；本发明的焊接方法，解决了焊接时焊接温度高于TSV硅基板上PI层的耐受温度造成的材料变质的问题。
进一步的，焊料凸台的材料为Sn63Pb37、SnAg或Cu/Ni/SnAg，熔点均低于 TSV硅基板上PI层的耐受温度。
进一步的，TSV硅基板上焊料凸台为圆柱形结构，凸点上表面为水平面结构，在倒扣焊对位时，与芯片焊料凸点形成点对面接触，采用回流焊方式焊接，在组件转移至回流焊炉时不容易使两者之间发生位移而影响对位的精度。
进一步的，TSV硅基板上焊料凸台为圆柱形或者球形时，在倒扣焊对位后，直接利用倒扣焊机对组件进行加热加压焊接，热加压焊接法能够在固定芯片和 TSV基板相对位置的情况下对两者进行焊接，焊接过程不会出现位置的偏移。进一步的，采用真空汽相清洗方式进行组件清洗，在真空环境下，将组件放入清洗腔室内的清洗篮(工装)内，并保持静止状态、在利用真空降低清洗剂的表面张力的情况下，通过调整清洗剂的清洗方式进行倒扣焊组件的清洗，即可达到有效清洗的目的，又不损伤组件。
进一步的，BGA焊球的材料为Sn63Pb37，Sn63Pb37的熔点为183℃，低于焊料凸台的熔点，两者之间形成由高到底的工艺温度梯度，当BGA焊球焊接时，焊接温度低于焊料凸台的熔点，不会对焊料凸台处的焊接点造成不利影响。
附图说明
图1为本发明的流程图；
图2为TSV硅基板的结构示意图；
图3为倒扣焊组件的结构示意图；
图4为TSV硅基板圆柱形焊台的结构示意图，其中，图4(a)为主视图，图4(b)为侧视图；
图5为TSV硅基板球形焊台的结构示意图，其中，图5(a)为主视图，图 5(b)为侧视图。
其中，1-焊料凸台，2-TSV硅基板，3-倒扣芯片，4-芯片焊料凸点，5-BGA 焊球。
具体实施方式
为了使本技术领域的人员更好地理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分的实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
需要说明的是，本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
下面结合附图对本发明做进一步详细描述：
如图1所示，图1为本发明的芯片与TSV硅基板的倒扣焊接方法的流程图，包括以下步骤：
焊芯片上Pb90Sn10熔点为330℃～350℃，TSV硅基板上PI层耐受温度为 270℃，两者之间存在的组装温度不兼容的问题；
步骤一：在TSV硅基板的正面制备Sn96.5Ag3.5(熔点为221℃)的焊料凸台；除此之外焊料凸台的材料可以是Sn63Pb37、SnAg或者Cu/Ni/SnAg等，熔点范围从183℃～220℃，焊接温度最高不超过270℃，形成组装过程由高到低的合理的温度梯度。
在后续的组装过程中，再次进行焊接时，因焊接温度低于焊料凸台的熔点，对前续的焊接件无影响。
参见图2，图2为TSV硅基板的结构示意图；在TSV硅基板上设有焊料凸台1，焊料凸台1可以采用电镀或者微球植球的方法固定在TSV硅基板上。
步骤二：利用倒扣焊设备对芯片和TSV硅基板进行对位，并利用回流焊设备进行焊接形成倒扣焊组件，焊接温度为260℃；倒扣焊组件结构如图3所示，倒扣焊组件包括焊料凸台1、TSV硅基板2、倒扣芯片3、芯片焊料凸点4和BGA 焊球5，倒扣芯片3倒扣在TSV硅基板2上，焊料凸台1与芯片焊料凸点4一一接触，两者焊接在一起，TSV硅基板2的底部焊接有BGA焊球5。
需进一步说明的是，在焊接前可对集成电路的凸点进行共面性检测，对TSV 硅基板进行翘曲度和焊料凸台的检测。根据焊料凸台的外形选择合适的倒扣焊工艺，焊料凸台为圆柱型时，如图4所示，从图4(a)和图4(b)可以看出，焊料凸台为圆柱型，凸点上表面为水平面结构，在倒扣焊对位时，与芯片焊料凸点形成点对面接触，采用回流焊方式焊接，在组件转移至回流焊炉时不容易使两者之间发生位移而影响对位的精度；
焊料凸台为圆柱形或球形时，如图5所示，焊料凸台为球形，在倒扣焊对位时，与芯片焊料凸点形成点对点接触，采用热压方式进行倒扣焊，热压方式进行倒扣焊可以在固定芯片和TSV基板相对位置的情况下对两者进行焊接，焊接过程不会出现位置的偏移，对TSV基板上制备的焊料外形无特殊要求。
步骤三：对焊接完成的倒扣焊组件进行真空汽相清洗，并进行底部填充；真空汽相清洗是在4mbar的真空环境下，将组件置入专门的聚四氟乙烯材质的清洗篮，组件中芯片和TSV硅基板均为硅材料，材料硬度高且脆性大，无可加持的工艺边，清洗过程保持静止，通过调整清洗剂喷淋、浸没喷淋、干燥等方式对组件进行清洗，并可防止对其造成损伤。
步骤四：在倒扣焊组件的背面进行BGA植球，BGA焊球材料为Sn63Pb37，熔点为183℃；
步骤五：将倒扣焊组件通过BGA焊球焊接至陶瓷管壳内，实现芯片与外壳的最终互连，焊接温度为220℃，形成2.5D-TSV封装结构的SiP模块。
最终得到的SiP模块。
以上内容仅为说明本发明的技术思想，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在技术方案基础上所做的任何改动，均落入本发明权利要求书的保护范围之内。

Claims (6)

1.一种芯片与TSV硅基板的倒扣焊接方法，其特征在于，包括以下步骤：
1）在TSV硅基板正面制备若干焊料凸台，所述焊料凸台的位置与焊芯片上的凸点焊接材料对应设置；
2）对焊芯片和TSV硅基板进行对位，对位完成后进行焊接，焊接温度大于等于焊料凸台的熔点，小于270℃，焊接温度为220℃；焊接完成后形成倒扣焊组件；
步骤1）中的焊料凸台的熔点为183-220℃；
还包括对所述倒扣焊组件的后处理，所述后处理包括：
对倒扣焊组件进行真空汽相清洗，并进行底部填充；
在倒扣焊组件的背面进行BGA植球；
将倒扣焊组件通过BGA焊球焊接至陶瓷管壳内，实现芯片与外壳的互连。
2.根据权利要求1所述的芯片与TSV硅基板的倒扣焊接方法，其特征在于，步骤1）中的焊料凸台的材料为Sn63Pb37、SnAg或Cu/Ni/SnAg。
3.根据权利要求1所述的芯片与TSV硅基板的倒扣焊接方法，其特征在于，步骤1）中的焊料凸台为圆柱形或球形。
4.根据权利要求3述的芯片与TSV硅基板的倒扣焊接方法，其特征在于，当焊料凸台为圆柱形时，利用回流方式进行倒扣焊接。
5.根据权利要求3述的芯片与TSV硅基板的倒扣焊接方法，其特征在于，当焊料凸台为球形时，利用热压方式进行倒扣焊接。
6.根据权利要求1所述的芯片与TSV硅基板的倒扣焊接方法，其特征在于，所述BGA焊球的材料为Sn63Pb37。
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