TWI706222B - 感光性樹脂組合物 - Google Patents

感光性樹脂組合物 Download PDF

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Publication number
TWI706222B
TWI706222B TW108122448A TW108122448A TWI706222B TW I706222 B TWI706222 B TW I706222B TW 108122448 A TW108122448 A TW 108122448A TW 108122448 A TW108122448 A TW 108122448A TW I706222 B TWI706222 B TW I706222B
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TW
Taiwan
Prior art keywords
photosensitive resin
compound
resin composition
mass
meth
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TW108122448A
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English (en)
Chinese (zh)
Other versions
TW201947323A (zh
Inventor
国松真一
松田隆之
山田有里
筒井大和
藤原晶
Original Assignee
日商旭化成股份有限公司
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Publication of TW201947323A publication Critical patent/TW201947323A/zh
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Publication of TWI706222B publication Critical patent/TWI706222B/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
    • C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
    • C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
TW108122448A 2015-04-08 2016-04-08 感光性樹脂組合物 TWI706222B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-079381 2015-04-08
JP2015079381 2015-04-08
JP2015-166570 2015-08-26
JP2015166570 2015-08-26

Publications (2)

Publication Number Publication Date
TW201947323A TW201947323A (zh) 2019-12-16
TWI706222B true TWI706222B (zh) 2020-10-01

Family

ID=57073148

Family Applications (3)

Application Number Title Priority Date Filing Date
TW108122448A TWI706222B (zh) 2015-04-08 2016-04-08 感光性樹脂組合物
TW106146049A TWI667539B (zh) 2015-04-08 2016-04-08 Photosensitive resin composition
TW105111187A TWI620017B (zh) 2015-04-08 2016-04-08 Photosensitive resin composition

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106146049A TWI667539B (zh) 2015-04-08 2016-04-08 Photosensitive resin composition
TW105111187A TWI620017B (zh) 2015-04-08 2016-04-08 Photosensitive resin composition

Country Status (6)

Country Link
JP (3) JPWO2016163540A1 (ja)
KR (2) KR101990230B1 (ja)
CN (2) CN107407880B (ja)
MY (1) MY187481A (ja)
TW (3) TWI706222B (ja)
WO (1) WO2016163540A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI666518B (zh) * 2016-12-30 2019-07-21 奇美實業股份有限公司 感光性樹脂組成物及其應用
JP6981864B2 (ja) * 2017-01-30 2021-12-17 旭化成株式会社 感光性樹脂組成物、感光性樹脂積層体、レジストパターンが形成された基板および回路基板の製造方法
CN116300314A (zh) * 2017-03-01 2023-06-23 旭化成株式会社 感光性树脂组合物
CN115524922A (zh) * 2017-03-29 2022-12-27 旭化成株式会社 感光性树脂组合物
CN109976092B (zh) * 2017-12-27 2022-04-01 太阳油墨（苏州）有限公司 固化性树脂组合物、干膜、固化物、及印刷电路板
KR102605003B1 (ko) * 2018-06-22 2023-11-22 아사히 가세이 가부시키가이샤 감광성 수지 조성물 및 레지스트 패턴의 형성 방법
WO2019244724A1 (ja) * 2018-06-22 2019-12-26 旭化成株式会社 感光性樹脂組成物およびレジストパターンの形成方法
KR102519818B1 (ko) * 2018-07-11 2023-04-10 후지필름 가부시키가이샤 약액, 약액 수용체
KR102509152B1 (ko) * 2018-08-09 2023-03-10 아사히 가세이 가부시키가이샤 감광성 수지 조성물 및 레지스트 패턴의 형성 방법
US20220362110A1 (en) * 2019-09-19 2022-11-17 Kuraray Noritake Dental Inc. Dental curable composition
CN114667487A (zh) * 2019-11-11 2022-06-24 旭化成株式会社 感光性树脂组合物和感光性树脂层叠体
US20230273518A1 (en) * 2020-08-07 2023-08-31 Showa Denko Materials Co., Ltd. Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing printed wiring board
JPWO2022181485A1 (ja) * 2021-02-26 2022-09-01
WO2022181764A1 (ja) * 2021-02-26 2022-09-01 太陽インキ製造株式会社 積層構造体およびフレキシブルプリント配線板
KR20240031514A (ko) * 2022-08-30 2024-03-08 삼성에스디아이 주식회사 감광성 수지 조성물, 이를 이용하여 제조된 감광성 수지막 및 컬러 필터

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006145844A (ja) * 2004-11-19 2006-06-08 Asahi Kasei Electronics Co Ltd 光重合性樹脂組成物
US20070269738A1 (en) * 2004-07-30 2007-11-22 Hitachi Chemical Company, Ltd. Photosensitive Film, Photosensitive Film Laminate and Photosensitive Film Roll
JP2008094803A (ja) * 2006-10-16 2008-04-24 Asahi Kasei Electronics Co Ltd 感光性樹脂組成物およびその積層体
TW200846824A (en) * 2007-01-23 2008-12-01 Fujifilm Corp Curing composition for photonano-imprinting lithography and pattern forming method by using the same
EP2096493A1 (en) * 2006-12-19 2009-09-02 Hitachi Chemical Company, Ltd. Photosensitive element
TW200947116A (en) * 2007-12-18 2009-11-16 Asahi Kasei Emd Corp Method for producing cured resist using negative photosensitive resin laminate, negative photosensitive resin laminate, and use of negative photosensitive resin laminate
CN101627339A (zh) * 2007-06-18 2010-01-13 旭化成电子材料株式会社 感光性树脂组合物、柔性印刷版、以及柔性印刷版的制造方法
TW201120572A (en) * 2009-09-25 2011-06-16 Asahi Kasei E Materials Corp Photosensitive resin composition for resist material, and photosensitive resin laminate
WO2015178462A1 (ja) * 2014-05-21 2015-11-26 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及び回路パターンの形成方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3619852B2 (ja) * 1999-06-08 2005-02-16 ニチゴー・モートン株式会社 感光性樹脂組成物及びこれを用いたドライフィルムレジスト
CN1273867C (zh) * 2001-11-12 2006-09-06 旭化成电子材料元件株式会社 感光性树脂组合物及其用途
JP4646759B2 (ja) 2005-09-20 2011-03-09 旭化成イーマテリアルズ株式会社 パターン形成材料、並びにパターン形成装置及びパターン形成方法
JP2007133349A (ja) * 2005-10-14 2007-05-31 Hitachi Chem Co Ltd 感光性フィルムロール
TWI536094B (zh) * 2007-12-25 2016-06-01 Asahi Kasei Emd Corp Photosensitive resin laminate
JP5396833B2 (ja) * 2008-11-28 2014-01-22 Ｊｓｒ株式会社 感放射線性樹脂組成物、液晶表示素子のスペーサーおよび保護膜ならびにそれらの形成方法
WO2011013664A1 (ja) * 2009-07-29 2011-02-03 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、感光性樹脂積層体及びレジストパターン形成方法
JP5526868B2 (ja) * 2010-03-03 2014-06-18 Ｊｓｒ株式会社 感放射線性樹脂組成物、表示素子のスペーサーおよび保護膜ならびにそれらの形成方法
JP5570275B2 (ja) * 2010-03-31 2014-08-13 旭化成イーマテリアルズ株式会社 ドライフィルムレジストロール
KR20120002864A (ko) * 2010-07-01 2012-01-09 동우 화인켐 주식회사 흑색 감광성 수지 조성물, 컬러 필터 및 이를 구비한 액정 표시 장치
CN106918991A (zh) * 2010-07-13 2017-07-04 日立化成工业株式会社 感光性元件、抗蚀图案的形成方法、印刷电路布线板的制造方法及印刷电路布线板
JP6022749B2 (ja) * 2010-07-30 2016-11-09 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの製造方法、リードフレームの製造方法及びプリント配線板の製造方法
JP5771944B2 (ja) * 2010-10-18 2015-09-02 Jsr株式会社 カラーフィルタの製造方法
CN103282829B (zh) * 2010-12-24 2016-08-17 旭化成株式会社 感光性树脂组合物
JP5835014B2 (ja) * 2011-03-31 2015-12-24 Jsr株式会社 画素パターンの形成方法及びカラーフィルタの製造方法
KR20130047656A (ko) * 2011-10-31 2013-05-08 히타치가세이가부시끼가이샤 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성 방법 및 인쇄 배선판의 제조 방법
JP6229256B2 (ja) 2011-10-31 2017-11-15 日立化成株式会社 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP5948539B2 (ja) 2012-01-27 2016-07-06 旭化成株式会社 感光性樹脂組成物
JP2013195681A (ja) * 2012-03-19 2013-09-30 Mitsubishi Chemicals Corp 感光性樹脂組成物、カラーフィルタ、液晶表示装置、及び有機ｅｌディスプレイ
JP5853806B2 (ja) * 2012-03-23 2016-02-09 Jsr株式会社 感放射線性樹脂組成物、硬化膜及び硬化膜の形成方法
JP6019791B2 (ja) * 2012-06-19 2016-11-02 日立化成株式会社 隔壁形成材料、これを用いた感光性エレメント、隔壁の形成方法及び画像表示装置の製造方法
JP5826135B2 (ja) * 2012-08-23 2015-12-02 富士フイルム株式会社 着色感放射線性組成物、これを用いたカラーフィルタ
JP6063200B2 (ja) * 2012-10-15 2017-01-18 旭化成株式会社 感光性樹脂組成物
JP6120560B2 (ja) * 2012-12-26 2017-04-26 第一工業製薬株式会社 カラーフィルター、ブラックマトリックス、又は回路形成用の硬化性樹脂組成物
JP6135314B2 (ja) * 2012-12-26 2017-05-31 Jsr株式会社 着色組成物、カラーフィルタ及び表示素子
JP6257164B2 (ja) 2013-03-28 2018-01-10 旭化成株式会社 レジストパターンの形成方法
WO2014192716A1 (ja) * 2013-05-27 2014-12-04 富士フイルム株式会社 カラーフィルタの製造方法、下地層形成用組成物、有機ｅｌ表示装置
JP6432511B2 (ja) 2013-07-23 2018-12-05 日立化成株式会社 投影露光用感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法、プリント配線板の製造方法及びリードフレームの製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070269738A1 (en) * 2004-07-30 2007-11-22 Hitachi Chemical Company, Ltd. Photosensitive Film, Photosensitive Film Laminate and Photosensitive Film Roll
JP2006145844A (ja) * 2004-11-19 2006-06-08 Asahi Kasei Electronics Co Ltd 光重合性樹脂組成物
JP2008094803A (ja) * 2006-10-16 2008-04-24 Asahi Kasei Electronics Co Ltd 感光性樹脂組成物およびその積層体
EP2096493A1 (en) * 2006-12-19 2009-09-02 Hitachi Chemical Company, Ltd. Photosensitive element
TW200846824A (en) * 2007-01-23 2008-12-01 Fujifilm Corp Curing composition for photonano-imprinting lithography and pattern forming method by using the same
CN101627339A (zh) * 2007-06-18 2010-01-13 旭化成电子材料株式会社 感光性树脂组合物、柔性印刷版、以及柔性印刷版的制造方法
TW200947116A (en) * 2007-12-18 2009-11-16 Asahi Kasei Emd Corp Method for producing cured resist using negative photosensitive resin laminate, negative photosensitive resin laminate, and use of negative photosensitive resin laminate
TW201120572A (en) * 2009-09-25 2011-06-16 Asahi Kasei E Materials Corp Photosensitive resin composition for resist material, and photosensitive resin laminate
WO2015178462A1 (ja) * 2014-05-21 2015-11-26 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及び回路パターンの形成方法

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