TWI690995B - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
- Publication number
- TWI690995B TWI690995B TW105142915A TW105142915A TWI690995B TW I690995 B TWI690995 B TW I690995B TW 105142915 A TW105142915 A TW 105142915A TW 105142915 A TW105142915 A TW 105142915A TW I690995 B TWI690995 B TW I690995B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- radiation
- rrm
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 142
- 239000000463 material Substances 0.000 claims abstract description 117
- 238000000034 method Methods 0.000 claims abstract description 63
- 230000005855 radiation Effects 0.000 claims abstract description 39
- 239000010410 layer Substances 0.000 claims description 173
- 239000002094 self assembled monolayer Substances 0.000 claims description 42
- 239000013545 self-assembled monolayer Substances 0.000 claims description 42
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 33
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 2
- YRIRWPYJHHMCCQ-UHFFFAOYSA-N [dimethyl-(trimethylsilylamino)silyl]methane;hexane Chemical compound CCCCCC.C[Si](C)(C)N[Si](C)(C)C YRIRWPYJHHMCCQ-UHFFFAOYSA-N 0.000 claims 1
- 238000001338 self-assembly Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 125000004122 cyclic group Chemical group 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- -1 LaSiO Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 150000002466 imines Chemical class 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 125000006574 non-aromatic ring group Chemical group 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 150000001241 acetals Chemical class 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000002373 hemiacetals Chemical class 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910019311 (Ba,Sr)TiO Inorganic materials 0.000 description 1
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 150000001361 allenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- XGIUDIMNNMKGDE-UHFFFAOYSA-N bis(trimethylsilyl)azanide Chemical compound C[Si](C)(C)[N-][Si](C)(C)C XGIUDIMNNMKGDE-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000001828 phenalenyl group Chemical group C1(C=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
本發明之實施例提供一種半導體裝置的製造方法。方法包括:形成輻射可移除材料(RRM)層於基底上方;藉由將基底的第一區中之輻射可移除材料(RRM)層的第一部份曝光至輻射束,以移除輻射可移除材料(RRM)層的第一部份。在基底的第一區中之輻射可移除材料(RRM)層的第一部份移除之後,基底的第二區中之輻射可移除材料(RRM)層的第二部分留下。方法亦包括:形成選擇性形成層(SFL)於基底的第二區中之輻射可移除材料(RRM)層的第二部分上方;以及形成材料層於基底的第一區上方。
Description
本發明實施例係關於半導體裝置的製造方法。
半導體積體電路(IC)產業歷經了指數成長。IC材料及設計上的技術進步已產生了數代的IC,其中每一代皆比前一代具有體積更小且更精密的電路。在IC發展的進程上,功能密度(即,每一晶片之內連線裝置的數量)逐漸增加的同時,幾何尺寸(即,利用製程步驟可以產生之最小元件(或線))逐漸縮小。
此微縮化(scaling down)製程通常可提供增加產率及降低相關成本之益處。此微縮化亦增加了IC製造的複雜度。為了實現這些進展,IC製造也需要類似發展。雖然IC裝置現有的製造方法通常已足以達到所欲之目的,但並非在每個方面都十分令人滿意。例如,仍需要改良材料層之圖案化。
本發明提供許多製造半導體裝置之不同實施例,其提供對現有方法之一或多個改良。在一實施例中,一種製造半導體裝置的方法包括:形成輻射可移除材料(RRM)層於基底上方;藉由將基底的第一區中之輻射可移除材料(RRM)層的第一部份曝光至輻射束,以移除輻射可移除材料(RRM)層的第一部份。因此,在基底的第一區中之輻射可移除材料(RRM)層的
第一部份移除之後,基底的第二區中之輻射可移除材料(RRM)層的第二部分留下。方法亦包括:形成選擇性形成層(SFL)於基底的第二區中之輻射可移除材料(RRM)層的第二部分上方;以及形成材料層於基底的第一區上方。
在另一實施例中,方法包括:形成輻射可移除材料(RRM)層於基底上方;以及藉由穿過光罩的極紫外(EUV)光束來曝光基底的第一區中之輻射可移除材料(RRM)層,以移除輻射可移除材料(RRM)層的第一部份。因此,在基底的第一區中之輻射可移除材料(RRM)層的第一部份移除之後,基底的第二區中之輻射可移除材料(RRM)層的第二部分留下。方法亦包括:形成自組裝單分子層(SAM)於第二區中之輻射可移除材料(RRM)層的第二部分上方;以及形成材料層於基底的第一區上方。
在又一實施例中,方法包括:對介電基底實行六甲基二矽氮烷(HMDS)處理,以改質介電基底的表面;以及在氫氣環境下,將介電基底曝光至穿過光罩的極紫外(EUV)光束,以移除介電基底的第一區中經改質表面的第一部份。因此,在第一區中之經改質表面的第一部份移除之後,介電基底的第二區中之經改質表面的第二部份留下。方法亦包括:形成自組裝單分子層(SAM)於第二區中之經改質表面的第二部分上方;以及形成金屬氧化層於介電基底的第一區上方。
100:方法
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:步驟
200:半導體裝置
210:基底
310:輻射可移除材料(RRM)層
340:未曝光區(第一區)
350:曝光區(第二區)
410:光源
420:輻射束
430:氫氣
440:光罩
450:圖案化輻射可移除材料(RRM)層
510:選擇性形成層(SFL)
510:自組裝單分子層(SAM)
610:材料層
620:圖案化材料層
以下將配合所附圖式詳述本發明之實施例,應注意的是,依照工業上的標準實施,以下圖示並未按照比例繪
製,事實上,可能任意的放大或縮小元件的尺寸以便清楚表現出本發明的特徵。而在說明書及圖式中,除了特別說明外,同樣或類似的元件將以類似的符號表示。
第1圖係根據一些實施例,製造半導體裝置之例示方法之流程圖。
第2、3A、3B、4、5及6圖係根據一些實施例,例示半導體裝置的剖面圖。
以下提供許多不同的實施方法或是例子來實行各種實施例之不同特徵。以下描述具體的元件及其排列的例子以闡述本發明。當然這些僅是例子且不該以此限定本發明的範圍。例如,元件的尺寸並不限定於所揭露的範圍或數值,而是取決於製程條件及/或裝置所期望的性質。此外,在描述中提及第一個元件形成於第二個元件上時,其可以包括第一個元件與第二個元件直接接觸的實施例,也可以包括有其他元件形成於第一個與第二個元件之間的實施例,其中第一個元件與第二個元件並未直接接觸。為簡化及清楚起見,各種特徵可任意繪製成不同尺寸。
此外,其中可能用到與空間相關的用詞,像是“在…下方”、“下方”、“較低的”、“上方”、“較高的”及類似的用詞,這些關係詞係為了便於描述圖示中一個(些)元件或特徵與另一個(些)元件或特徵之間的關係。這些空間關係詞包括使用中或操作中的裝置之不同方位,以及圖示中所描述的方位。裝置可能被轉向不同方位(旋轉90度或其他方位),則
其中使用的空間相關形容詞也可相同地照著解釋。
第1圖係根據一些實施例,製造一或多個半導體裝置之方法100之流程圖。下方將配合如第2、3A、3B、4、5及6所示之半導體裝置200來詳細說明方法100。
請參照第1及2圖,方法100開始於步驟102,提供基底210。基底210包括矽。替代地或額外地,基底210可包括其他元素半導體,例如鍺。基底210亦可包括化合物半導體,例如碳化矽、砷化鎵、砷化銦及磷化銦。基底210可包括合金半導體,例如矽鍺、碳化矽鍺、磷化鎵砷及磷化鎵銦。在一實施例中,基底210可包括磊晶層。舉例來說,基底可具有上覆於塊狀半導體之磊晶層。此外,基底210可包括絕緣體上半導體(semiconductor-on-insulator,SOI)基底。舉例來說,基底210可包括藉由諸如以氧離子植入矽晶隔離法(separation by implanted oxygen,SIMOX)來分離之製程或藉由諸如晶圓接合及研磨之其它合適技術所形成之埋藏氧化物層(buried oxide layer,BOX)。
基底210亦可包括介電基底,例如氧化矽、氮化矽、氮氧化矽、低介電常數(low-k)介電質、碳化矽及/或其他合適的層。
基底210亦可包括各種p型摻雜區及/或n型摻雜區,其係藉由諸如離子佈植及/或擴散之製程來植入。這些摻雜區包括n井、p井、光摻雜區(light doped region,LDD)及各種通道摻雜輪廓(profiles),其設置以形成各種積體電路(IC)裝置,例如:互補金氧半場效電晶體(complimentary
metal-oxide-semiconductor field-effect transistor,CMOSFET)、影像感測器及/或發光二極體(light emitting diode,LED)。基底210更可包括其它功能性特徵,例如:電阻及/或電容形成於基底之中及/或之上。
基底210亦可包括各種隔離特徵。隔離特徵分隔基底210中之各種裝置區。隔離特徵包括藉由使用不同製程技術所形成之不同結構。例如,隔離特徵可包括淺溝槽隔離(shallow trench isolation,STI)特徵。淺溝槽隔離(STI)之形成可包括蝕刻溝槽於基底210中,以及以諸如氧化矽、氮化矽及/或氮氧化矽之絕緣材料填充溝槽。填充的溝槽可具有多層結構,例如以氮化矽填充溝槽之熱氧化物襯層。可實行化學機械拋光(chemical mechanical polishing,CMP)以回拋(polish back)過多的絕緣材料及平坦化絕緣特徵的頂表面。
基底210亦可包括藉由介電層及電極層所形成之閘極堆疊。介電層可包括界面層(interfacial layer,IL)及高介電常數(high-k,HK)介電層,其係藉由合適的技術所沉積,例如:化學氣相沉積(chemical vapor deposition,CVD)、原子層沉積(atomic layer deposition,ALD)、物理氣相沉積(physical vapor deposition,PVD)、熱氧化、上述組合及/或其它合適技術。界面層(IL)可包括氧化物、HfSiO及氮氧化物,且高介電常數(HK)介電層可包括LaO、AlO、ZrO、TiO、Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfZrO、HfLaO、HfSiO、LaSiO、AlSiO、HfTaO、HfTiO、(Ba,Sr)TiO3(BST)、Al2O3、Si3N4、(SiON)氮氧化物及/或其它合適材料。電極層可包括單層或多層結構,
例如:具有功函數以增進裝置性能之金屬層(功函數金屬層)、襯層、潤濕層、黏合層以及金屬、金屬合金或金屬矽化物之導電層之各種組合。金屬閘極(MG)電極420可包括Ti、Ag、Al、TiAlN、TaC、TaCN、TaSiN、Mn、Zr、TiN、TaN、Ru、Mo、Al、WN、Cu、W、任何合適材料及/或上述之組合。
基底210亦可包括複數個層間介電(inter-level dielectric,ILD)層及導電特徵,其整合以形成配置來耦合各種p型及n型摻雜區與其它功能性特徵(例如閘極電極)之互連結構,產生一功能性積體電路。在一實例中,基底210可包括互連結構的一部分,且互連結構包括多層互連(multi-layer interconnect,MLI)結構及與多層互連(MLI)結構整合的介層介電(ILD)層,提供電性佈線以將基底210中之各種裝置耦合至輸入/輸出功率及信號。互連結構包括各種金屬線、接觸件及介層窗特徵(或介層插塞)。金屬線提供水平電性佈線。接觸件提供矽基底與金屬線之間的垂直連接,而介層窗特徵提供金屬線於不同金屬層之間的垂直連接。
通常,基底210或基底210上方的膜層將藉由光微影製程來圖案化。光微影製程使用光以將圖案(例如幾何圖案)從光罩轉移至基底上的光敏感層(例如:光阻(photoresist)或簡稱”阻層(resist)”)。光在光敏感層的曝光區中造成化學變化,其可增加或減少曝光區的溶解度。可在曝光基底之前或之後實行烘烤製程,例如後曝光烘烤製程。顯影製程利用顯影劑於基底上方創造曝光圖案,以選擇性移除曝光或未曝光區。當光阻曝光至極紫外(EUV)光時,產生小量的酸於曝光區域之中。於
後曝光烘烤(post-exposure bake,PEB)步驟期間,此酸催化了附著至光阻的聚合物鏈之基團的片段(去保護)並改變其化學性質。最後,光阻的去保護部分溶解在液體顯影劑中。於後曝光烘烤(PEB)步驟期間,光阻中酸的擴散導致圖案化區域之邊緣模糊,並造成解析度限制、線邊緣粗糙(line edge roughness,LER)及圖案崩壞之問題。本發明實施例提供一種圖案化製程,其不使用光阻及隨後的顯影製程。
請再次參照第1及2圖,方法100繼續至步驟104,形成輻射可移除材料(radiation-removable-material,RRM)層310於基底210上方。當在隨後步驟中曝光至輻射時,輻射可移除材料(RRM)層310將被移除。在本實施例中,輻射可移除材料(RRM)層310可包括具有非環狀結構及環狀結構之有機材料,且環狀結構可為芳香環及非芳香環,其可以包含官能基以增加附著性,例如:-F、-Cl、-Br、-I、-PO(OH)2、-PO4、-BO3、-C2O4、-NO3、-SO3、-CO3、-S、-CN、-CH3COO、-NH2、-ClO4、-ClO3、-ClO2、-ClO、-COOH、-OH、-SH、-N3、-S(=O)-、亞胺、醚、乙烯基醚、縮醛、半縮醛、酯、醛,酮、醯胺、碸、醋酸、氰化物。可藉由化學氣相沉積(CVD)、原子層沉積(ALD)、物理氣相沉積(PVD)、熱氧化、旋轉塗佈、上述組合或其它合適技術來沉積輻射可移除材料(RRM)層310。
或者,可藉由實行六甲基二矽氮烷(hexamethyldisilizane,HMDS)處理來形成輻射可移除材料(RRM)層310,以將基底210的頂部(表面)改質成輻射可移除材料(RRM)層310。在一實施例中,對氧化矽基底210的頂表面實
行六甲基二矽氮烷(HMDS)處理。在六甲基二矽氮烷(HMDS)處理中,以氣相形式將六甲基二矽氮烷(HMDS)試劑引入含有氧化矽基底210的腔室中。作為一”羥基吸收劑(hydroxyl getter)”,六甲基二矽氮烷(HMDS)化學移除表面OH基。首先,六甲基二矽氮烷(HMDS)與氧化物表面的水反應以產生氣態NH3、氧及惰性六甲基二矽氧烷(hexamethyldisiloxane)。這產生了脫水表面。接著,額外的六甲基二矽氮烷(HMDS)與釋放的氧反應以形成三甲基甲矽烷基(thrimethylsilyl)氧化物種類(species),其化學接合至上述表面。這些反應持續進行直到氧化物基底210的整個表面被上述種類覆蓋,或氧化物基底210的整個表面被改質成輻射可移除材料(RRM)層310,其被稱為六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層310。在一實施例中,於約90℃至約150℃的溫度下實行六甲基二矽氮烷(HMDS)處理約2秒至約1000秒的時間。
請參照第1及3A圖,方法100繼續至步驟106,將輻射可移除材料(RRM)層310曝光至輻射束以形成圖案化輻射可移除材料(RRM)層450於基底210上方。在本實施例中,輻射可移除材料(RRM)層310曝光至從光源410穿過光罩(罩幕或網線(reticle))440之輻射束420。
根據欲製造之IC產品的規格,光罩440具有為IC產品所設計之預定義圖案(具有複數個第一區340及第二區350)。光罩440的圖案相應於構成IC裝置的各種元件之材料的圖案。舉例來說,IC設計佈局的一部分包括各種IC特徵,其形成於基底210及設置在基底210上之各種材料層中,上述IC特徵例如:
主動區、閘極電極、源極及汲極、介層互連結構之金屬線或介層窗,以及接合墊之開口。在第一區340中,藉由光罩440阻擋輻射束420,使其免於到達輻射可移除材料(RRM)層310,其係為未曝光區(第一區)340。而在第二區350中,輻射束420未被光罩440阻擋且可以穿過光罩440以到達輻射可移除材料(RRM)層310,其係為曝光區(第二區)350。如此一來,在曝光區(第二區)350中,輻射可移除材料(RRM)層310接收輻射束420且接著被移除;而在未曝光區(第一區)340中,輻射可移除材料(RRM)層310未接收輻射束420且留下來。換句話說,如第3B圖所示,形成具有圖案的圖案化輻射可移除材料(RRM)層450,其圖案係藉由光罩440的預定義圖案所定義。形成圖案化輻射可移除材料(RRM)層450,使得基底210在未曝光區(第一區)340中被輻射可移除材料(RRM)層310所覆蓋,而暴露於曝光區(第二區)350中。
光源410可為各種來源,包括氟化氪(Krypton Fluoride,KrF)準分子雷射(excimer lasers)之248nm光束、氟化氬(Argon Fluoride,ArF)準分子雷射之193nm光束、氟氣(Fluoride,F2)準分子雷射之157nm光束或具有較長波長之其它光源。光源410亦可包括光學來源,其選自於由紫外(ultraviolet,UV)光源、深紫外(deep ultraviolet,DUV)光源、極紫外(EUV)光源及X射線光源所組成之群組及/或其它合適光源。
在本實施例中,如第3A圖所示,在氫氣430的環境下,將穿過光罩440的極紫外(EUV)輻射束420實行至六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層310,以移除曝光區(第
二區)350中之六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層310,並接著形成圖案化六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層450。如此一來,未曝光區(第一區)340中的六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層310(經改質表面)留下,而不具六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層310之氧化物基底210暴露於曝光區(第二區)350中。也就是說,不同於典型的光微影製程,將輻射可移除材料(RRM)層310圖案化而未實行顯影步驟。
請參照第1及4圖,方法100繼續至步驟108,形成選擇性形成層(selective-forming-layer,SFL)510於未曝光區(第一區)340中殘留的輻射可移除材料(RRM)層310上方,並留下基底210暴露於曝光區(第二區)350中。在本實施例中,選擇性形成層(SFL)510為自組裝單分子層(self-assembled monolayer,SAM)510。自組裝單分子層(SAM)510可包括非環狀結構及環狀結構、芳香環及非芳香環。其包含至少一個單牙配位基膦酸。在一實施例中,藉由將十八烷基膦酸(octadecylphosphonic acid,ODPA)之溶液塗覆至具有圖案化六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層450的氧化物基底210,接著以甲醇沖洗並藉由壓縮空氣乾燥,以形成自組裝單分子層(SAM)510。因此,自組裝單分子層(SAM)510被稱為十八烷基膦酸(ODPA)自組裝單分子層(SAM)510。舉例來說,藉由將氧化物基底210浸入十八烷基膦酸(ODPA)之溶液中以形成十八烷基膦酸(ODPA)自組裝單分子層(SAM)510。又舉例來說,藉由以十八烷基膦酸(ODPA)之溶液來沖洗氧化物基底210以形成十八烷基膦酸
(ODPA)自組裝單分子層(SAM)510。
請參照第1及5圖,方法100繼續至步驟110,形成材料層610於曝光區(第二區)350中暴露的基底210上方。在本實施例中,藉由區域選擇性原子層沉積(ALD)技術或區域選擇性分子層沉積(molecular layer deposition,MLD)技術來形成材料層610,使得材料層610選擇性沉積在暴露的基底210上方,而未沉積於選擇性形成層(SFL)510上方。
材料層610可包括諸如Ce、La、Sb、Bi、Pb、Hf、Zr、Ti、Cr、W、Mo、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Al、Ga、Tl、Ge、Sn、Pb及Bi等金屬的氧化物、氟化物及有機金屬化合物。有機金屬錯合物的配位基可包括具有諸如環氧、偶氮化合物、鹵烷、亞胺、烯、炔、過氧化物、酮、醛、丙二烯、芳香基或雜環基等官能基之C3-C20烷基。芳香結構可包括苯基、萘基、菲基、蒽基、萉基(phenalenyl)及其它含有一至五員環之芳香衍生物。
材料層610亦可包括金屬,例如:Ce、La、Sb、Bi、Pb、Hf、Zr、Ti、Cr、W、Mo、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Al、Ga、Tl、Ge、Sn、Pb、Bi及/或其它合適金屬。
材料層610亦可包括聚合物,其具有諸如非環狀結構及環狀結構之化學結構。環狀結構可包括芳香環及非芳香環。聚合物可包含官能基,例如:F、-Cl、-Br、-I、-PO(OH)2、-PO4、-BO3、-C2O4、-NO3、-SO3、-CO3、-S、-CN、-CH3COO、-NH2、-ClO4、-ClO3、-ClO2、-ClO、-COOH、-OH、-SH、-N3、
-S(=O)-、亞胺、醚、乙烯基醚、縮醛、半縮醛、酯、醛,酮、醯胺、碸、醋酸、氰化物及/或其它合適聚合物化學結構。
在本實施例中,材料層610為金屬氧化物層,其藉由原子層沉積(ALD)技術選擇性地沉積在氧化物基底210上方。
請參照第1及6圖,方法100繼續至步驟112,選擇性地移除選擇性形成層(SFL)510及從未曝光區(第一區)340中殘留的輻射可移除材料(RRM)層310。可藉由選擇性濕蝕刻、選擇性乾蝕刻及/或其組合來移除選擇性形成層(SFL)510及殘留的輻射可移除材料(RRM)層310。舉例來說,選擇性濕蝕刻溶液可包括TMAH、HNO3、NH4OH、KOH、HF、HCl、NaOH、H3PO4及/或其它合適濕蝕刻溶液或上述組合。或者,選擇性乾蝕刻製程可使用含氯氣體(例如:Cl2、CHCl3、CCl4及/或BCl3)、含溴氣體(例如:HBr及/或CHBr3)、含碘氣體、含氟氣體(例如:CF4、SF6、CH2F2、CHF3及/或C2F6)及/或其它合適氣體,及/或電漿,及/或上述之組合。
在本實施例中,可藉由四甲基氫氧化銨(TMAH)濕蝕刻以選擇性移除十八烷基膦酸(ODPA)自組裝單分子層(SAM)510及六甲基二矽氮烷(HMDS)輻射可移除材料(RRM)層310。
在移除選擇性形成層(SFL)510及殘留的輻射可移除材料(RRM)層310之後,材料層610保留在具有圖案的基底上方,其稱為圖案化材料層620,且光罩440的圖案係設計用於圖案化材料層620。形成圖案化材料層620使得材料層610形成於曝光區(第二區)350上方,但未形成於未曝光區(第一區)340上
方。
可以於方法100之前、期間及之後提供額外的步驟,且一些所述之步驟在方法100之額外的實施例中可以被取代、刪除或移動。
基於上述,本發明之實施例提供藉由極紫外(EUV)曝光、自組裝單分子層(SAM)形成及原子層沉積/分子層沉積(ALD/MLD)以將材料層圖案化的方法。此方法採用實行六甲基二矽氮烷(HMDS)處理以改質基底之表面,並於氫氣環境下實行極紫外(EUV)曝光製程,以在所選區域中移除經改質基底之頂表面。也就是說,此方法達成將材料層圖案化而不需經過典型的顯影製程,其包括於曝光基底之後施用顯影溶液。此方法更顯示將材料層圖案化,使其具有提高的解析度並減少圖案崩壞的問題。
本發明提供許多製造半導體裝置之不同實施例,其提供對現存方法之一或多個改善。在一實施例中,一種製造半導體裝置的方法包括:形成輻射可移除材料(RRM)層於基底上方;藉由將基底的第一區中之輻射可移除材料(RRM)層的第一部份曝光至輻射束,以移除輻射可移除材料(RRM)層的第一部份。因此,在基底的第一區中之輻射可移除材料(RRM)層的第一部份移除之後,基底的第二區中之輻射可移除材料(RRM)層的第二部分留下。方法亦包括:形成選擇性形成層(SFL)於基底的第二區中之輻射可移除材料(RRM)層的第二部分上方;以及形成材料層於基底的第一區上方。
在一些實施例中,其中藉由將輻射可移除材料
(RRM)層的第一部份曝光至輻射束以移除基底的第一區中之輻射可移除材料(RRM)層的第一部份包括:藉由穿過光罩的輻射束來曝光輻射可移除材料(RRM)層的第一部分,其中光罩阻擋基底的第二區中之輻射束。
在一些實施例中,其中輻射束為極紫外(EUV)光束。
在一些實施例中,其中形成輻射可移除材料(RRM)層於基底上方包括實行六甲基二矽氮烷(HMDS)處理以改質基底的一部份。
在一些實施例中,其中基底為介電基底。
在一些實施例中,其中藉由將輻射可移除材料(RRM)層的第一部份曝光至輻射束以移除基底的第一區中之輻射可移除材料(RRM)層的第一部份包括:在氫氣環境下,將介電基底曝光至極紫外(EUV)光束。
在一些實施例中,其中形成選擇性形成層(SFL)於第二區中之輻射可移除材料(RRM)層上方包括:形成自組裝單分子層(SAM)。
在一些實施例中,其中形成自組裝單分子層(SAM)包括:將十八烷基膦酸(ODPA)之溶液施用至基底。
在一些實施例中,其中形成材料層於基底的第一區上方包括:藉由原子層沉積(ALD)或分子層沉積(MLD)來選擇性形成材料層。
在一些實施例中,其中形成材料層於基底的第一區上方包括:形成金屬氧化物層於基底的第一區上方。
在一些實施例中,方法更包括:在形成材料層於基底的第一區上方之後,移除基底的第二區中之選擇性形成層(SFL)及輻射可移除材料(RRM)層。
在另一實施例中,方法包括:形成輻射可移除材料(RRM)層於基底上方;以及藉由穿過光罩的極紫外(EUV)光束來曝光基底的第一區中之輻射可移除材料(RRM)層,以移除輻射可移除材料(RRM)層的第一部份。因此,在基底的第一區中之輻射可移除材料(RRM)層的第一部份移除之後,基底的第二區中之輻射可移除材料(RRM)層的第二部分留下。方法亦包括:形成自組裝單分子層(SAM)於第二區中之輻射可移除材料(RRM)層的第二部分上方;以及形成材料層於基底的第一區上方。
在一些實施例中,其中基底為氧化物基底;及其中形成輻射可移除材料(RRM)層於基底上方包括:對氧化物基底實行六甲基二矽氮烷(HMDS)處理。
在一些實施例中,其中藉由穿過光罩的極紫外(EUV)光束來曝光基底包括:在氫氣環境下,藉由極紫外(EUV)光束來曝光氧化物基底。
在一些實施例中,其中形成自組裝單分子層(SAM)於第二區中之輻射可移除材料(RRM)層上方包括:將十八烷基膦酸(ODPA)之溶液施用至氧化物基底。
在一些實施例中,其中形成材料層於基底的第一區上方包括:形成金屬氧化物層於基底的第一區上方。
在一些實施例中,方法更包括:在形成材料層於
基底的第一區上方之後,移除基底的第二區中之自組裝單分子層(SAM)。
在又一實施例中,方法包括:對介電基底實行六甲基二矽氮烷(HMDS)處理,以改質介電基底的表面;以及在氫氣環境下,將介電基底曝光至穿過光罩的極紫外(EUV)光束,以移除介電基底的第一區中經改質表面的第一部份。因此,在第一區中之經改質表面的第一部份移除之後,介電基底的第二區中之經改質表面的第二部份留下。方法亦包括:形成自組裝單分子層(SAM)於第二區中之經改質表面的第二部分上方;以及形成金屬氧化層於介電基底的第一區上方。
在一些實施例中,其中形成自組裝單分子層(SAM)包括:將十八烷基膦酸(ODPA)之溶液施用至具有經改質表面的介電基底。
在一些實施例中,方法更包括:在形成金屬氧化層於介電基底的第一區上方之後,移除第二區中之自組裝單分子層(SAM)。
前述內文概述了許多實施例的特徵,使本技術領域中具有通常知識者可以更佳的了解本發明的各個方面。本技術領域中具有通常知識者應該可理解,他們可以很容易的以本發明為基礎來設計或改質其它製程及結構,並以此達到相同的目的及/或達到與本發明介紹的實施例相同的優點。本技術領域中具有通常知識者也應該了解這些相等的結構並不會背離本發明的發明精神與範圍。本發明可以作各種改變、置換、修改而不會背離本發明的發明精神與範圍。
100‧‧‧方法
102‧‧‧步驟
104‧‧‧步驟
106‧‧‧步驟
108‧‧‧步驟
110‧‧‧步驟
112‧‧‧步驟
Claims (10)
- 一種半導體裝置的製造方法,包括:形成一輻射可移除材料(radiation-removable-material,RRM)層於一基底上方;藉由將該基底的一第一區中之該輻射可移除材料(RRM)層的一第一部份曝光至一輻射束,以移除該輻射可移除材料(RRM)層的該第一部份,其中,在該基底的該第一區中之該輻射可移除材料(RRM)層的該第一部份移除之後,該基底的一第二區中之該輻射可移除材料(RRM)層的一第二部分留下;形成一選擇性形成層(selective-forming-layer,SFL)於該基底的該第二區中之該輻射可移除材料(RRM)層的該第二部分上方;以及形成一材料層於該基底的該第一區上方。
- 如申請專利範圍第1項所述之半導體裝置的製造方法,其中藉由將該輻射可移除材料(RRM)層的該第一部份曝光至該輻射束以移除該基底的該第一區中之該輻射可移除材料(RRM)層的該第一部份包括:藉由穿過一光罩的該輻射束來曝光該輻射可移除材料(RRM)層的該第一部分,其中該光罩阻擋該基底的該第二區中之該輻射束。
- 如申請專利範圍第1項所述之半導體裝置的製造方法,其中該輻射束為極紫外(EUV)光束。
- 如申請專利範圍第1項所述之半導體裝置的製造方法,其中形成該輻射可移除材料(RRM)層於該基底上方包括實行六 甲基二矽氮烷(hexamethyldisilizane,HMDS)處理以改質該基底的一部份。
- 如申請專利範圍第1項所述之半導體裝置的製造方法,其中形成該選擇性形成層(SFL)於該第二區中之該輻射可移除材料(RRM)層上方包括:形成一自組裝單分子層(self-assembled monolayer,SAM)。
- 如申請專利範圍第5項所述之半導體裝置的製造方法,其中形成該自組裝單分子層(SAM)包括:將十八烷基膦酸(octadecylphosphonic acid,ODPA)之溶液施用至該基底。
- 一種半導體裝置的製造方法,包括:於一基底上方形成一輻射可移除材料(radiation-removable-material,RRM)層;藉由穿過一光罩的一極紫外(EUV)光束來曝光該輻射可移除材料(RRM)層,以移除該基底的該第一區中之該輻射可移除材料(RRM)層的一第一部份,其中在移除該第一區中之該輻射可移除材料(RRM)層的該第一部份之後,留下該基底的一第二區中之該輻射可移除材料(RRM)層的一第二部分;於該第二區中之該輻射可移除材料(RRM)層的該第二部分上方形成一自組裝單分子層(self-assembled monolayer,SAM);以及於該基底的該第一區上方形成一材料層。
- 如申請專利範圍第7項所述之半導體裝置的製造方法,其中該基底為一氧化物基底,且其中於該基底上方形成該輻射可移除材料(RRM)層包括:對該氧化物基底實行六甲基二矽氮 烷(hexamethyldisilizane,HMDS)處理。
- 如申請專利範圍第8項所述之半導體裝置的製造方法,其中藉由穿過該光罩的該極紫外(EUV)光束來曝光該基底包括:在氫氣環境下,藉由該極紫外(EUV)光束來曝光該氧化物基底。
- 一種半導體裝置的製造方法,包括:對一介電基底實行六甲基二矽氮烷(hexamethyldisilizane,HMDS)處理,以改質該介電基底的一表面;在氫氣環境下,將該介電基底曝光至穿過一光罩的一極紫外(EUV)光束,以移除該介電基底的一第一區中經改質的該表面的一第一部份,在移除該第一區中經改質的該表面的該第一部份之後,留下該介電基底的一第二區中經改質的該表面的一第二部份;於該第二區中經改質的該表面的該第二部份上方形成一自組裝單分子層(self-assembled monolayer,SAM);以及在該介電基底的該第一區上方形成一金屬氧化層。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/040,533 | 2016-02-10 | ||
US15/040,533 US9570302B1 (en) | 2016-02-10 | 2016-02-10 | Method of patterning a material layer |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201729288A TW201729288A (zh) | 2017-08-16 |
TWI690995B true TWI690995B (zh) | 2020-04-11 |
Family
ID=57965086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105142915A TWI690995B (zh) | 2016-02-10 | 2016-12-23 | 半導體裝置的製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9570302B1 (zh) |
CN (1) | CN107068542B (zh) |
TW (1) | TWI690995B (zh) |
Families Citing this family (280)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
TWI671792B (zh) | 2016-12-19 | 2019-09-11 | 荷蘭商Asm知識產權私人控股有限公司 | 基板處理設備 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
TWI791689B (zh) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | 包括潔淨迷你環境之裝置 |
JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10566428B2 (en) * | 2018-01-29 | 2020-02-18 | Raytheon Company | Method for forming gate structures for group III-V field effect transistors |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
JP7124098B2 (ja) | 2018-02-14 | 2022-08-23 | エーエスエム・アイピー・ホールディング・ベー・フェー | 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法 |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11187983B2 (en) | 2018-06-26 | 2021-11-30 | International Business Machines Corporation | EUV patterning of monolayers for selective atomic layer deposition |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
JP7515411B2 (ja) | 2018-06-27 | 2024-07-12 | エーエスエム・アイピー・ホールディング・ベー・フェー | 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US10615037B2 (en) * | 2018-08-17 | 2020-04-07 | International Business Machines Corporation | Tone reversal during EUV pattern transfer using surface active layer assisted selective deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
KR20220020834A (ko) * | 2019-06-12 | 2022-02-21 | 도쿄엘렉트론가부시키가이샤 | 반도체 디바이스의 평탄화 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
JP2021177545A (ja) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
EP3919979A1 (en) | 2020-06-02 | 2021-12-08 | Imec VZW | Resistless patterning mask |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090256144A1 (en) * | 2008-02-29 | 2009-10-15 | Masataka Kano | Method for manufacturing organic transistor and organic transistor |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079600A (en) * | 1987-03-06 | 1992-01-07 | Schnur Joel M | High resolution patterning on solid substrates |
US6911400B2 (en) * | 2002-11-05 | 2005-06-28 | International Business Machines Corporation | Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same |
US7394155B2 (en) | 2004-11-04 | 2008-07-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Top and sidewall bridged interconnect structure and method |
CN100590904C (zh) * | 2006-06-06 | 2010-02-17 | 中华映管股份有限公司 | 图案化制程及应用此制程的有机薄膜晶体管的制作方法 |
US8003281B2 (en) | 2008-08-22 | 2011-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd | Hybrid multi-layer mask |
KR101535227B1 (ko) * | 2008-12-31 | 2015-07-08 | 삼성전자주식회사 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
US7862962B2 (en) | 2009-01-20 | 2011-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit layout design |
US8621406B2 (en) | 2011-04-29 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and methods for converting planar design to FinFET design |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
US8728332B2 (en) | 2012-05-07 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of patterning small via pitch dimensions |
US20130320451A1 (en) | 2012-06-01 | 2013-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Semiconductor device having non-orthogonal element |
US8987142B2 (en) | 2013-01-09 | 2015-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-patterning method and device formed by the method |
US8799834B1 (en) | 2013-01-30 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company Limited | Self-aligned multiple patterning layout design |
US8900989B2 (en) * | 2013-03-06 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating an air gap using a damascene process and structure of same |
US9054159B2 (en) | 2013-03-14 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of patterning a feature of a semiconductor device |
US9501601B2 (en) | 2013-03-14 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout optimization of a main pattern and a cut pattern |
US9153478B2 (en) | 2013-03-15 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer etching process for integrated circuit design |
CN105152125B (zh) * | 2015-08-10 | 2017-04-19 | 中山大学 | 一种基于微沟道结构的微纳米材料有序自组装图形化方法 |
-
2016
- 2016-02-10 US US15/040,533 patent/US9570302B1/en active Active
- 2016-12-23 TW TW105142915A patent/TWI690995B/zh active
- 2016-12-23 CN CN201611202278.2A patent/CN107068542B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090256144A1 (en) * | 2008-02-29 | 2009-10-15 | Masataka Kano | Method for manufacturing organic transistor and organic transistor |
Also Published As
Publication number | Publication date |
---|---|
TW201729288A (zh) | 2017-08-16 |
CN107068542B (zh) | 2022-01-07 |
US9570302B1 (en) | 2017-02-14 |
CN107068542A (zh) | 2017-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI690995B (zh) | 半導體裝置的製造方法 | |
US9418862B2 (en) | Method for integrated circuit patterning | |
JP7219278B2 (ja) | 極紫外線(euv)リソグラフィにおいて感度を向上させるための金属含有トップ・コートを用いるパターニング材料積層膜 | |
US9728408B2 (en) | Method of semiconductor integrated circuit fabrication | |
US11398381B2 (en) | Method for forming semiconductor structure | |
US9589800B2 (en) | Method for integrated circuit patterning | |
US9875906B2 (en) | Mechanisms for forming patterns using multiple lithography processes | |
US10395925B2 (en) | Patterning material film stack comprising hard mask layer having high metal content interface to resist layer | |
US8183162B2 (en) | Method of forming a sacrificial layer | |
US20150214226A1 (en) | Method and structure for gap filling improvement | |
KR101708537B1 (ko) | 반도체 집적 회로 제조 방법 | |
CN107204278B (zh) | 在材料层中形成开口的方法 | |
US9728407B2 (en) | Method of forming features with various dimensions | |
TW201523734A (zh) | 基板上形成互連圖案的方法 | |
CN113948448A (zh) | 包括含碳层的图案化材料和用于半导体器件制造的方法 | |
US9543161B1 (en) | Method of planarizating film | |
CN113284792A (zh) | 半导体元件的形成方法 | |
CN106356303B (zh) | 一种半导体器件及其制作方法、电子装置 | |
US20230012705A1 (en) | Humidity control or aqueous treatment for euv metallic resist | |
TWI804806B (zh) | 製造半導體元件的方法 | |
Nojiri et al. | Latest Dry Etching Technologies |